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WO2018181202A1 - Élément électroluminescent à semi-conducteur et procédé de fabrication d'élément électroluminescent à semi-conducteur - Google Patents

Élément électroluminescent à semi-conducteur et procédé de fabrication d'élément électroluminescent à semi-conducteur Download PDF

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Publication number
WO2018181202A1
WO2018181202A1 PCT/JP2018/012188 JP2018012188W WO2018181202A1 WO 2018181202 A1 WO2018181202 A1 WO 2018181202A1 JP 2018012188 W JP2018012188 W JP 2018012188W WO 2018181202 A1 WO2018181202 A1 WO 2018181202A1
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Prior art keywords
region
phase modulation
refractive index
layer
regions
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PCT/JP2018/012188
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English (en)
Japanese (ja)
Inventor
貴浩 杉山
優 瀧口
黒坂　剛孝
和義 廣瀬
佳朗 野本
聡 上野山
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浜松ホトニクス株式会社
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Application filed by 浜松ホトニクス株式会社 filed Critical 浜松ホトニクス株式会社
Priority to DE112018001611.0T priority Critical patent/DE112018001611T5/de
Priority to CN201880016044.XA priority patent/CN110383610A/zh
Priority to JP2019509822A priority patent/JP7089504B2/ja
Publication of WO2018181202A1 publication Critical patent/WO2018181202A1/fr
Priority to US16/433,127 priority patent/US11646546B2/en
Priority to US17/749,893 priority patent/US11777276B2/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1231—Grating growth or overgrowth details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0287—Facet reflectivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1203—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers over only a part of the length of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H01S5/2063—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by particle bombardment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs

Definitions

  • the present invention relates to a semiconductor light emitting device and a method for manufacturing the same.
  • the semiconductor light-emitting element described in Patent Document 1 includes an active layer and a phase modulation layer optically coupled to the active layer.
  • the phase modulation layer has a base layer and a plurality of different refractive index regions arranged in the base layer.
  • the semiconductor light emitting element described in Patent Document 1 emits light of a beam pattern (beam projection pattern) corresponding to the arrangement pattern of a plurality of different refractive index regions. That is, the arrangement pattern of the plurality of different refractive index regions is set according to the target beam pattern.
  • Patent Document 1 also describes an application example of such a semiconductor light emitting element.
  • a plurality of semiconductor light emitting elements each having a different direction of the emitted laser beam are arranged one-dimensionally or two-dimensionally on a support substrate.
  • the said application example is comprised so that a laser beam may be scanned with respect to a target object by lighting the arranged several semiconductor light-emitting element sequentially.
  • the application example described above is applied to distance measurement to an object, laser processing of the object, and the like by scanning the object with a laser beam.
  • the present invention has been made in view of such problems, and does not require a step of disposing a plurality of semiconductor light emitting elements on a support substrate, and makes it easy to irradiate a target beam projection area with light of a target beam projection pattern. It is another object of the present invention to provide a semiconductor light emitting device and a method for manufacturing the same that are realized with high accuracy.
  • the semiconductor light-emitting device is a single semiconductor light-emitting device having a plurality of light-emitting portions in which crosstalk between adjacent light-emitting portions is reduced, and a first surface and a first surface facing the first surface.
  • a semiconductor light emitting device having two surfaces, wherein one of the first surface and the second surface functions as a light emitting surface that outputs light, and the other functions as a support surface (including a reflective surface), and an active layer
  • a phase modulation layer including a plurality of phase modulation regions, a first cladding layer, a second cladding layer, a first surface side electrode, a plurality of second surface side electrodes, and a common substrate layer.
  • the active layer is located between the first surface and the second surface.
  • the plurality of phase modulation layers included in the phase modulation layer are optically coupled to the active layer.
  • Each of the plurality of phase modulation areas is arranged so as to reduce the occurrence of crosstalk between adjacent phase modulation areas, and each constitutes a part of an independent light emitting unit.
  • Each of the plurality of phase modulation regions includes a basic region having a first refractive index, and a plurality of different refractive index regions each provided in the basic region and having a second refractive index different from the first refractive index.
  • the first cladding layer is located on the side where the first surface is disposed with respect to the multilayer structure including at least the active layer and the phase modulation layer.
  • the second cladding layer is disposed on the side where the second surface is located with respect to the laminated structure.
  • the first surface side electrode is disposed on the side where the first surface is located with respect to the first cladding layer.
  • the plurality of second surface side electrodes respectively correspond to the plurality of phase modulation regions, and are disposed on the side where the second surface is located with respect to the second cladding layer.
  • the plurality of second surface side electrodes are respectively disposed in a plurality of regions overlapping with the plurality of phase modulation regions when viewed along the stacking direction of the stacked structure.
  • the common substrate layer is disposed between the first cladding layer and the first surface side electrode and has a continuous surface that holds a plurality of phase modulation regions.
  • the plurality of different refractive index regions in each of the plurality of phase modulation regions are arranged in accordance with an arrangement pattern in which each center of gravity is located at a position that is shifted by a predetermined distance from each lattice point in a virtual square lattice in the basic region. Arranged in the base area.
  • the arrangement pattern in each of the plurality of phase modulation regions (arrangement pattern of the plurality of different refractive index regions) is supplied with a drive current from the second surface side electrode arranged on the support surface side and corresponding to the phase modulation region.
  • the beam projection pattern of the light output from the light exit surface and the beam projection area that is the projection range of the beam projection pattern are determined to coincide with the target beam projection pattern and the target beam projection area.
  • the method for manufacturing a semiconductor light emitting device manufactures a semiconductor light emitting device having the above-described structure.
  • the manufacturing method includes a first step of forming a common substrate layer, a second step of forming an element body on the common substrate layer, and a third step of forming an isolation region in the element body.
  • the element main body formed on the common substrate layer has a third surface and a fourth surface facing the third surface and facing the common substrate layer.
  • the element body includes at least an active layer, a phase modulation layer, a first cladding layer, and a second cladding layer disposed between the third surface and the fourth surface.
  • the basic region in the phase modulation layer is arranged in a state where a plurality of portions (each of which includes a plurality of different refractive index regions) to be a plurality of phase modulation regions are separated from each other by a predetermined distance. Composed of a single layer.
  • the separation region formed in the element body electrically separates at least a plurality of portions to be a plurality of phase modulation regions.
  • the isolation region is formed from the third surface toward the fourth surface until reaching the common substrate layer.
  • the present invention there is no need for a step of disposing a plurality of semiconductor light emitting elements on a support substrate, and the semiconductor light emitting element in which irradiation of light of a target beam projection pattern to a target beam projection region is realized easily and with high accuracy.
  • a manufacturing method thereof can be provided.
  • FIG. 3 is a cross-sectional view taken along line III-III in FIGS.
  • FIGS. 1-10 These are the figures for demonstrating the relationship between the target beam projection pattern (light image) of the light output from a semiconductor light-emitting device, and the rotation angle distribution in a phase modulation layer.
  • FIG. 10 These are the figures which show an example of a target beam projection pattern in the semiconductor light-emitting device which concerns on 1st Embodiment, and phase distribution among the complex amplitude distribution obtained by carrying out the inverse Fourier transform of the original pattern corresponding to it.
  • FIG. 1 show the structure of a light-emitting device provided with the semiconductor light-emitting element concerning 1st Embodiment.
  • FIG. 1st Embodiment These are the figures which looked at the semiconductor light-emitting device concerning 2nd Embodiment from the 1st surface side.
  • FIG. 11 is a sectional view taken along line XX in FIGS. 9 and 10.
  • FIG. 12 shows an example of a target beam projection pattern different from that in FIG. 12 in the semiconductor light emitting device according to the second and third embodiments, and a phase distribution among complex amplitude distributions obtained by inverse Fourier transform of the corresponding original pattern.
  • FIG. 12 shows an example of a target beam projection pattern different from that in FIG. 12 in the semiconductor light emitting device according to the second and third embodiments, and a phase distribution among complex amplitude distributions obtained by inverse Fourier transform of the corresponding original pattern.
  • FIGS. 15 and 16 It is a block diagram which shows the structure of a light-emitting device provided with the semiconductor light-emitting device concerning 3rd Embodiment. These are the figures which looked at the semiconductor light-emitting device concerning a 4th embodiment from the 1st surface side.
  • FIG. 21 is a cross-sectional view taken along line XX-XX in FIGS. 19 and 20.
  • FIG. 5 is a diagram showing an example (rotation method) of the XY in-plane shape of the different refractive index region that does not have 180 ° rotational symmetry. These are figures which show the 1st modification of the phase modulation area
  • a different refractive index region (displacement different refractive index when a lattice point different refractive index region is provided in addition to the different refractive index region (displacement different refractive index region))
  • FIG. 1 Shows an example of a combination of a different refractive index region (displacement different refractive index region) and a lattice point refractive index region in the case of providing a different refractive index region (displacement different refractive index region) in addition to a different refractive index region (displacement different refractive index region).
  • FIG. These are figures which show the modification (rotation system) in the case of providing a lattice point different refractive index area
  • FIG. 29 is a plan view showing an example in which a refractive index substantially periodic structure is applied only in a specific region of the phase modulation layer as a first modification of the phase modulation layer in FIG. 28.
  • FIG. 33 is a phase distribution corresponding to the beam projection pattern shown in FIG. 32A and a partially enlarged view thereof.
  • the inclination angle of the straight line L with respect to the X axis and the Y axis is 45 °.
  • a rotation method for rotating the different refractive index regions around the lattice points and traveling waves AU, AD, AR, and AL as a method for determining the arrangement pattern of the different refractive index regions.
  • FIG. 29 is a diagram showing a second modification of the phase modulation layer in FIG. 28. These are figures for demonstrating the coordinate transformation from spherical coordinates (d1, ⁇ tilt , ⁇ rot ) to coordinates (x, y, z) in the XYZ orthogonal coordinate system.
  • the semiconductor light-emitting device is a single semiconductor light-emitting device having a plurality of light-emitting portions in which crosstalk between adjacent light-emitting portions is reduced, as one aspect thereof,
  • a semiconductor having a second surface facing the first surface, wherein one of the first surface and the second surface functions as a light emitting surface that outputs light, and the other functions as a support surface (including a reflective surface)
  • a common substrate layer is located between the first surface and the second surface.
  • the plurality of phase modulation layers included in the phase modulation layer are optically coupled to the active layer.
  • Each of the plurality of phase modulation areas is arranged so as to reduce the occurrence of crosstalk between adjacent phase modulation areas, and each constitutes a part of an independent light emitting unit.
  • Each of the plurality of phase modulation regions includes a basic region having a first refractive index, and a plurality of different refractive index regions each provided in the basic region and having a second refractive index different from the first refractive index.
  • the first cladding layer is located on the side where the first surface is disposed with respect to the multilayer structure including at least the active layer and the phase modulation layer.
  • the second cladding layer is disposed on the side where the second surface is located with respect to the laminated structure.
  • the first surface side electrode is disposed on the side where the first surface is located with respect to the first cladding layer.
  • the plurality of second surface side electrodes respectively correspond to the plurality of phase modulation regions, and are disposed on the side where the second surface is located with respect to the second cladding layer.
  • the plurality of second surface side electrodes are respectively disposed in a plurality of regions overlapping with the plurality of phase modulation regions when viewed along the stacking direction of the stacked structure.
  • the common substrate layer is disposed between the first cladding layer and the first surface side electrode and has a continuous surface that holds a plurality of phase modulation regions.
  • each of the plurality of phase modulation regions is output from the light emitting surface when the driving current is supplied from the corresponding second surface side electrode among the plurality of second surface side electrodes.
  • the light beam projection pattern and the beam projection area that is the projection range of the beam projection pattern are arranged at predetermined positions in the basic area according to the arrangement pattern for matching the target beam projection pattern and the target beam projection area, respectively. .
  • a Z axis that coincides with the normal direction of the light exit surface and an X axis and a Y axis that coincide with one surface of the phase modulation layer including a plurality of different refractive index regions are orthogonal to each other.
  • M1 (an integer of 1 or more) ⁇ N1 (an integer of 1 or more) unit constituent regions each having a square shape on the XY plane A virtual square lattice constituted by R is set.
  • the arrangement pattern is a unit on the XY plane specified by a coordinate component x (an integer between 1 and M1) in the X-axis direction and a coordinate component y (an integer between 1 and N1) in the Y-axis direction.
  • the lattice point O (x, y) where the centroid G1 of the different refractive index region located in the unit configuration region R (x, y) is the center of the unit configuration region R (x, y). It is defined that the vector from the grid point O (x, y) to the centroid G1 is directed in a specific direction, and is separated from the y) by a distance r.
  • the semiconductor light-emitting device manufacturing method manufactures a semiconductor light-emitting device having the above-described structure as one aspect thereof.
  • the manufacturing method includes a first step of forming a common substrate layer, a second step of forming an element body on the common substrate layer, and a third step of forming an isolation region in the element body.
  • the element main body formed on the common substrate layer has a third surface and a fourth surface facing the third surface and facing the common substrate layer.
  • the element body includes at least an active layer, a phase modulation layer, a first cladding layer, and a second cladding layer disposed between the third surface and the fourth surface.
  • the basic region in the phase modulation layer is arranged in a state where a plurality of portions (each of which includes a plurality of different refractive index regions) to be a plurality of phase modulation regions are separated from each other by a predetermined distance. Composed of a single layer.
  • the separation region formed in the element body electrically separates at least a plurality of portions to be a plurality of phase modulation regions. The separation region is formed from the third surface toward the fourth surface until reaching the common substrate layer.
  • the arrangement pattern in each of the plurality of phase modulation regions (the arrangement pattern of the plurality of different refractive index regions) is supplied with a drive current from the second surface side electrode corresponding to the phase modulation region.
  • the beam projection pattern of the light output from the light emission surface (first surface or second surface) and the beam projection area that is the projection range of the beam projection pattern coincide with the target beam projection pattern and the target beam projection area It is stipulated to be. Therefore, the arrangement pattern set in each of the plurality of phase modulation regions determines the beam projection region and the beam projection pattern of light output from the light emitting surface of the semiconductor light emitting element.
  • one semiconductor light emitting element includes a phase modulation layer having a plurality of phase modulation areas for determining a light beam projection area and a beam projection pattern.
  • the semiconductor light emitting element electrically separates each of the plurality of phase modulation regions and is viewed from a direction along the Z axis (hereinafter referred to as “Z axis direction”).
  • Z axis direction A separation region that electrically separates a plurality of corresponding regions in each of the active layer, the first cladding layer, and the second cladding layer, which sometimes overlaps the plurality of phase modulation regions, may be further provided.
  • the separation region optically separates a plurality of corresponding regions in each of the active layer, the phase modulation layer, the first cladding layer, and the second cladding layer together with the plurality of phase modulation regions. May be.
  • the adjacent phase modulation regions are electrically separated by the separation region, so that occurrence of crosstalk between the adjacent phase modulation regions is suppressed. Further, since the adjacent phase modulation areas are optically separated by the separation areas, the occurrence of crosstalk between the adjacent phase modulation areas is further suppressed. As a result, irradiation of light of a desired beam projection pattern (target beam projection pattern) to a desired beam projection area (target beam projection area) is realized with higher accuracy.
  • the separation region reaches the common substrate layer from the second surface toward the common substrate layer surface in a region between adjacent phase modulation regions among the plurality of phase modulation regions. It grows until you do.
  • the distance (shortest distance) between the tip of the separation region and the first surface side electrode is not more than half the thickness of the common substrate layer along the Z-axis direction.
  • the distance between the tip of the separation region and the first surface side electrode is preferably 70 ⁇ m or less. In this case, the occurrence of crosstalk between adjacent phase modulation regions is sufficiently suppressed.
  • the separation region may be a semiconductor layer modified by an electric field resulting from high-intensity light irradiation.
  • a semiconductor light emitting device in which adjacent phase modulation regions are electrically separated and generation of crosstalk between adjacent phase modulation regions is sufficiently suppressed can be efficiently manufactured.
  • the isolation region may be any of a semiconductor layer insulated by impurity diffusion or ion implantation and an air gap (slit) formed by dry etching or wet etching. In this case, a semiconductor light emitting device in which adjacent phase modulation regions are electrically and optically separated, and occurrence of crosstalk between adjacent phase modulation regions is sufficiently suppressed can be efficiently manufactured. .
  • the arrangement pattern in each of the phase modulation regions is determined so that the beam projection patterns are equal even when a drive current is supplied from any of the plurality of second surface side electrodes. May be.
  • an application similar to the application example of the semiconductor light emitting device disclosed in Patent Document 1 application example in which the laser beam is scanned with respect to the object
  • various other applications are also possible. It becomes possible.
  • an application different from the application example shown in Patent Document 1 it is applied to various types of illumination in which the same pattern light is continuously or intermittently applied to one place, and the same pattern pulse light is continuously applied to one place.
  • the phase modulation layer optically coupled to the active layer is embedded in the basic layer and the refractive index different from the refractive index of the basic layer.
  • a plurality of different refractive index regions each having a refractive index.
  • the centroid G1 of the corresponding different refractive index region is arranged away from the lattice point O (x, y). Furthermore, the direction of the vector from the lattice point O to the center of gravity G1 is individually set for each unit configuration region R.
  • the phase of the beam changes depending on the direction of the vector from the lattice point O to the centroid G1 of the corresponding refractive index region, that is, the angular position around the lattice point of the centroid G1 of the different refractive index region.
  • the phase of the beam output from each of the different refractive index regions can be controlled only by changing the position of the center of gravity of the different refractive index region, and the beam projection formed as a whole
  • the pattern (a group of beams forming an optical image) can be controlled to a desired shape.
  • the lattice point in the virtual square lattice may be located outside the different refractive index region, or the lattice point may be located inside the different refractive index region.
  • the lattice constant (substantially equivalent to the lattice spacing) of a virtual square lattice is a
  • the different refractive index located in the unit constituent region R (x, y) The distance r between the center of gravity G1 of the region and the lattice point O (x, y) preferably satisfies 0 ⁇ r ⁇ 0.3a.
  • an original image serving as a beam projection pattern of light emitted from a semiconductor light emitting element corresponding to each of a plurality of phase modulation regions, for example, a spot, three or more points It preferably includes at least one of a spot group consisting of: a straight line, a cross, a line drawing, a lattice pattern, a striped pattern, a figure, a photograph, computer graphics, and characters.
  • the coordinates (x, y, z) in the XYZ orthogonal coordinate system are as shown in FIG. Spherical coordinates (d1, ⁇ tilt , ⁇ rot ) defined by the length d1 of the lens , the tilt angle ⁇ tilt from the Z axis, and the rotation angle ⁇ rot from the X axis specified on the XY plane
  • FIG. 1 Spherical coordinates (d1, ⁇ tilt , ⁇ rot ) defined by the length d1 of the lens , the tilt angle ⁇ tilt from the Z axis, and the rotation angle ⁇ rot from the X axis specified on the XY plane
  • z represents a design optical image on a predetermined plane (target beam projection region) set in the XYZ orthogonal coordinate system which is a real space.
  • the angle theta tilt and theta rot has the following formula ( 4) the normalized wave number defined by 4) and corresponding to the coordinate value k x on the Kx axis corresponding to the X axis, and the normalized wave number defined by the following equation (5) corresponding to the Y axis and Kx shall be converted into coordinate values k y on Ky axis perpendicular to the axis.
  • the normalized wave number means a wave number normalized with 1.0 as the wave number corresponding to the lattice spacing of a virtual square lattice.
  • FR k x, k y
  • X-axis coordinate component x an integer of 1 to M1
  • Y-axis coordinate component y an integer of 1 to N1
  • the complex amplitude F (x, y) obtained by performing the two-dimensional inverse Fourier transform on the unit configuration region R (x, y) on the plane is given by the following formula (6), where j is an imaginary unit.
  • the complex amplitude F (x, y) is defined by the following equation (7), where the amplitude term is A (x, y) and the phase term is P (x, y). Further, as a fourth precondition, the unit configuration region R (x, y) is parallel to the X axis and the Y axis, and is a lattice point O (x, y) that is the center of the unit configuration region R (x, y). ) In the orthogonal s axis and t axis.
  • the corresponding different refractive index regions are arranged so as to satisfy the following relationship.
  • the distance r between the center (lattice point) of each unit constituting region constituting the virtual square lattice and the centroid G1 of the corresponding different refractive index region is preferably a constant value over the entire phase modulation layer (note that it is not excluded that the distance r is partially different).
  • the phase distribution in the entire phase modulation layer (the distribution of the phase term P (x, y) in the complex amplitude F (x, y) assigned to the unit configuration region R (x, y)) is 0 to 2 ⁇ (rad ),
  • the center of gravity of the different refractive index region coincides with the lattice point of the unit constituent region R in the square lattice. Therefore, the two-dimensional distributed Bragg diffraction effect in the above phase modulation layer is close to the two-dimensional distributed Bragg diffraction effect when the different refractive index region is arranged on each lattice point of the square lattice. Can be easily formed, and a reduction in threshold current for oscillation can be expected.
  • the unit configuration region R (x, y) passes through the lattice point O (x, y) under the first to fourth preconditions.
  • the center of gravity G1 of the different refractive index region corresponding to the straight line inclined from the axis is arranged.
  • the corresponding different refractive index regions are arranged in the unit configuration region R (x, y) so as to satisfy the following relationship. Even when the arrangement pattern of the different refractive index regions in the phase modulation layer is determined by the on-axis shift method, the same effect as the above rotation method is obtained.
  • all of the plurality of different refractive index regions have a shape defined on the XY plane, XY It is preferable that at least one of the area defined on the plane and the distance r defined on the XY plane coincide with each other.
  • the above-mentioned “shape defined on the XY plane” includes a combined shape of a plurality of elements constituting one different refractive index region (see FIGS. 25 (h) to 25 (k)). . According to this, generation of noise light and zero-order light that becomes noise in the beam projection region can be suppressed.
  • the zero-order light is light output in parallel with the Z-axis direction, and means light that is not phase-modulated in the phase modulation layer.
  • the shape of the plurality of different refractive index regions on the XY plane is a perfect circle, square, regular hexagon, regular octagon, regular hexagon, regular triangle, right isosceles triangle , A rectangle, an ellipse, a shape in which two circles or a portion of an ellipse overlap, an oval shape, a teardrop shape, an isosceles triangle, an arrow shape, a trapezoid, a pentagon, and a shape in which two rectangles overlap It is preferable.
  • the oval shape has a dimension in the short axis direction near one end portion along the long axis thereof, which is near the other end portion. It is a shape obtained by deforming an ellipse so as to be smaller than the dimension in the minor axis direction.
  • the teardrop shape deforms one end of an ellipse along its long axis into a sharp end protruding along the long axis. It is a shape obtained by doing.
  • the arrow shape as shown in FIGS. 22E and 38G, one side of the rectangle forms a triangular cutout, and the side opposite to the one side forms a triangular protrusion. It is a shape.
  • the shape of the plurality of different refractive index regions on the XY plane is any of a perfect circle, a square, a regular hexagon, a regular octagon, a regular hexagon, a rectangle, and an ellipse, that is, When the shape is mirror-image symmetric (line symmetric), in the phase modulation layer, from the lattice point O of each of the plurality of unit constituting regions R constituting the virtual square lattice, to the centroid G1 of the corresponding different refractive index region. It is possible to set the angle ⁇ formed by the direction in which the heading direction and the s-axis parallel to the X-axis with high accuracy.
  • the shape of the plurality of different refractive index regions on the XY plane is a regular triangle, a right isosceles triangle, an isosceles triangle, a shape in which two circles or a part of an ellipse overlap, an egg shape, a teardrop shape, In the case of any one of an arrow shape, a trapezoid, a pentagon, and a shape in which a part of two rectangles overlap each other, that is, when a rotational symmetry of 180 ° is not provided, higher light output can be obtained.
  • At least one phase modulation region among the plurality of phase modulation regions surrounds an inner region composed of M1 ⁇ N1 unit configuration regions R and an outer periphery of the inner region. And an outer region provided as described above.
  • the outer region has a plurality of peripherals arranged so as to overlap with lattice points in the extended square lattice defined by setting the same lattice structure as the virtual square lattice on the outer periphery of the virtual square lattice. Includes a lattice point refractive index region. In this case, light leakage along the XY plane is suppressed, and the oscillation threshold current can be reduced.
  • At least one phase modulation region among the plurality of phase modulation regions includes a plurality of different refractive index regions different from the plurality of different refractive index regions, that is, a plurality of lattice points.
  • a different refractive index region may be provided.
  • the plurality of different refractive index regions are respectively arranged in M1 ⁇ N1 unit configuration regions R, and are arranged so that the respective centroids G2 coincide with the lattice points O of the corresponding unit configuration regions R.
  • the combined shape composed of the different refractive index region and the lattice point different refractive index region does not have a rotational symmetry of 180 ° as a whole. Therefore, higher light output can be obtained.
  • each aspect listed in this [Description of Embodiments of the Invention] is applicable to each of all the remaining aspects or to all combinations of these remaining aspects. .
  • FIG. 1 is a view of the semiconductor light emitting device 100 according to the first embodiment as viewed from the first surface side.
  • 2 is a view of the semiconductor light emitting device 100 as viewed from the second surface side, and
  • FIG. 3 is a cross-sectional view taken along line III-III in FIGS.
  • the semiconductor light emitting device 100 has a first surface 100a and a second surface 100b, and outputs light from the first surface 100a as a light emitting surface.
  • the second surface 100b functions as a support surface.
  • the semiconductor light emitting device 100 includes a common substrate layer 101, an active layer 103, a phase modulation layer 104, a first cladding layer 102, a second cladding layer 106, and a pair of second surface side electrodes 108-1, 108-. 2 and the first surface side electrode 110.
  • the phase modulation layer 104 has a pair of phase modulation regions 104-1 and 104-2 that are optically coupled to the active layer 103.
  • a laminated structure is configured by at least the phase modulation layer 104 including the active layer 103 and the pair of phase modulation regions 104-1 and 104-2.
  • the configuration of the laminated structure is the same in the embodiments described later.
  • the first cladding layer 102 is located on the first surface 100a side with respect to the stacked structure (including at least the active layer 103 and the phase modulation layer 104).
  • the second cladding layer 106 is located on the second surface 100b side with respect to the stacked structure (including at least the active layer 103 and the phase modulation layer 104).
  • the second surface side electrodes 108-1 and 108-2 are on the side where the second surface 100b is disposed with respect to the second cladding layer 106, and positions corresponding to the phase modulation regions 104-1 and 104-2, respectively. Is arranged.
  • the first surface side electrode 110 is located on the side where the first surface 100 a is disposed with respect to the first cladding layer 102.
  • the phase modulation regions 104-1 and 104-2 include basic regions 104-1a and 104-2a having a first refractive index, and a plurality of different refractive index regions having a second refractive index different from the first refractive index, respectively.
  • 104-1b and 104-2b The plurality of different refractive index regions 104-1b and 104-2b are located at locations where the respective centroids G1 are shifted by a predetermined distance r from each lattice point in the virtual square lattice in the basic regions 104-1a and 104-2a. They are arranged in the basic areas 104-1a and 104-2a in accordance with the arrangement pattern.
  • the arrangement pattern of the plurality of different refractive index regions 104-1b is the second surface side electrode 108-1 corresponding to the phase modulation region 104-1 or 104-2.
  • the beam projection pattern expressed by the light output from the first surface 100a when the drive current is supplied from 108-2 and the beam projection area which is the projection range of the beam projection pattern are the target beam projection pattern and the target beam. It is set to match the projection area.
  • the projection area may be the same or different.
  • the projection pattern may be the same or different.
  • beam projection region in this specification refers to a projection range of light output from the first surface or the second surface of the semiconductor light emitting element when a driving current is supplied from one second surface side electrode.
  • Beam projection pattern refers to a light projection pattern (light intensity pattern) within the projection range.
  • the active layer 103, the phase modulation layer 104, the first cladding layer 102, the second cladding layer 106, and the common substrate layer 101 reach the common substrate layer 101 from the second surface 100b toward the common substrate layer 101.
  • a separation region 112 is provided that extends to the end. The separation region 112 overlaps with the phase modulation regions 104-1 and 104-2 when viewed from the Z-axis direction (stacking direction), the active layer 103, the first cladding layer 102, the second cladding layer 106, and the first cladding layer. 102 and the second cladding layer 106 respectively extend from the second surface 100b toward the common substrate layer 101 so as to electrically and optically separate corresponding regions.
  • the thickness of the portion of the common substrate layer 101 located below the separation region 112 is: The thickness is less than half of the thickness of the common substrate layer 101, and typically less than 70 ⁇ m. As shown in FIG. 3, each part of the semiconductor light emitting device 100 divided by the position of the isolation region 112 can be regarded as an independent light emitting part (first light emitting part, second light emitting part).
  • the first surface side electrode 110 has openings at positions corresponding to the phase modulation regions 104-1 and 104-2 and the second surface side electrodes 108-1 and 108-2. 110-1 and 110-2.
  • the first surface side electrode 110 may be a transparent electrode instead of the electrode having the opening.
  • the vertical relationship between the active layer 103 and the phase modulation layer 104 may be opposite to the vertical relationship shown in FIG. FIG. 3 also shows the common substrate layer 101, the upper light guide layer 105b, the lower light guide layer 105a, the contact layer 107, the insulating layer 109, and the antireflection layer 111. It is not necessary to have these.
  • the common substrate layer 101 is made of GaAs.
  • the first cladding layer 102 is made of AlGaAs.
  • the active layer 103 has a multiple quantum well structure MQW (barrier layer: AlGaAs / well layer: InGaAs).
  • the phase modulation layer 104 includes basic regions 104-1a and 104-2a and a plurality of different refractive index regions 104-1b and 104-2b embedded in the basic regions 104-1a and 104-2a.
  • the basic regions 104-1a and 104-2a are made of GaAs.
  • the plurality of different refractive index regions 104-1b and 104-2b are made of AlGaAs.
  • the upper light guide layer 105b and the lower light guide layer 105a are made of AlGaAs.
  • the second cladding layer 106 is made of AlGaAs.
  • the contact layer 107 is made of GaAs.
  • the insulating layer 109 is made of SiO 2 or silicon nitride.
  • the antireflection layer 111 is made of a dielectric single layer film or a dielectric multilayer film such as silicon nitride (SiN) or silicon dioxide (SiO 2 ).
  • the element body (at least the active layer 103, the phase modulation layer 104, and the first cladding layer 102) is formed on the common substrate layer 101 as described above. , Including the second cladding layer 106) (second step).
  • the isolation region 112 is formed by a semiconductor layer modified by high-intensity light (electric field), a semiconductor layer insulated by any of impurity diffusion and ion implantation, or any of dry etching and wet etching It is a slit (gap).
  • the plurality of different refractive index regions 104-1b and 104-2b may be holes filled with argon, nitrogen, air, or the like.
  • the separation region 112 extending from the second surface 100 b toward the common substrate layer 101 does not need to penetrate the common substrate layer 101.
  • the thickness of the portion where the separation region 112 is formed in the thickness of the common substrate layer 101 along the Z-axis direction between the end surface 112a on the first surface side electrode 110 side of the separation region 112 and the first surface side electrode 110).
  • the shortest distance is preferably less than or equal to half the thickness of the common substrate layer 101 in order to reduce crosstalk between the light emitting portions.
  • the thickness of the unformed portion of the separation region 112 is 70 ⁇ m or less. Note that the manufacturing method according to the present embodiment is also applicable to the manufacture of semiconductor light emitting devices according to second to fourth embodiments described later.
  • the common substrate layer 101 and the first cladding layer 102 are doped with N-type impurities. P-type impurities are added to the second cladding layer 106 and the contact layer 107.
  • the energy band gap between the first cladding layer 102 and the second cladding layer 106 is larger than the energy band gap between the upper light guide layer 105b and the lower light guide layer 105a.
  • the energy band gap between the upper light guide layer 105 b and the lower light guide layer 105 a is set to be larger than the energy band gap of the multiple quantum well structure MQW of the active layer 103.
  • FIG. 4 is a schematic diagram for explaining an arrangement pattern of the different refractive index regions in the phase modulation region.
  • FIG. 5 is a diagram for explaining the positional relationship between the gravity center G1 of the different refractive index region and the lattice point O in the virtual square lattice. Although only twelve different refractive index regions are shown in FIG. 4, a large number of different refractive index regions are actually provided. In one example, a 704 ⁇ 704 different refractive index region is provided.
  • the arrangement pattern described here is not an arrangement pattern specific to the first embodiment, and the arrangement patterns of the second to fourth embodiments described later are also the same.
  • the signs representing the phase modulation region, the basic region, and the plurality of different refractive index regions are generalized, the phase modulation region is n04-m, the basic region is n04-ma, and the plurality of different refractive index regions are n04. It is represented by -mb.
  • n is a number for distinguishing the embodiments (the first embodiment is “1”, the second embodiment is “2”, etc.
  • m is a semiconductor light emitting element constituting one semiconductor light emitting module. It is a number for distinguishing, and “n” and “m” are both represented by an integer of 1 or more.
  • the phase modulation layer n04-m includes a first refractive index basic region n04-ma and a second refractive index different refractive index region n04-mb different from the first refractive index.
  • a virtual square lattice defined on the XY plane is set in the phase modulation layer n04-m.
  • FIG. 4 is a schematic diagram for explaining an arrangement pattern (rotation method) of different refractive index regions in the phase modulation layer. One side of the square lattice is parallel to the X axis, and the other side is parallel to the Y axis.
  • the square unit constituting region R centering on the lattice point O of the square lattice can be set two-dimensionally over a plurality of columns along the X axis and a plurality of rows along the Y axis.
  • a plurality of different refractive index regions n04-mb is provided in each unit constituting region R.
  • the planar shape of the different refractive index region n04-mb is, for example, a circular shape.
  • the center of gravity G1 of the different refractive index region n04-mb is arranged away from the lattice point O closest to it.
  • the XY plane is a plane orthogonal to the thickness direction (Z axis) of each of the semiconductor light emitting devices 100-1 and 100-2 shown in FIG. This coincides with one surface of the phase modulation layer n04-m including mb.
  • Each unit constituting region R constituting the square lattice is specified by a coordinate component x (an integer of 1 or more) in the X-axis direction and a coordinate component y (an integer of 1 or more) in the Y-axis direction, and the unit constituting region R (x , Y).
  • the center of the unit configuration region R (x, y), that is, the lattice point is represented by O (x, y).
  • the lattice point O may be located outside the different refractive index region n04-mb, or may be included inside the different refractive index region n04-mb.
  • the ratio of the area S of the different refractive index regions n04-mb occupying in one unit constituent region R is called a filling factor (FF).
  • FF filling factor
  • the broken lines indicated by x1 to x4 indicate the center position in the X-axis direction in the unit constituent area R
  • the broken lines indicated by y1 to y3 indicate the center position in the Y-axis direction in the unit constituent area R.
  • the intersections of the broken lines x1 to x4 and the broken lines y1 to y3 are the centers O (1,1) to O (3,4) of the unit constituent regions R (1,1) to R (3,4), that is, , Indicate lattice points.
  • This virtual square lattice has a lattice constant of a.
  • the lattice constant a is adjusted according to the emission wavelength.
  • the arrangement pattern of the different refractive index region n04-mb is determined by the method described in Patent Document 1 according to the target beam projection region and the target beam projection pattern. That is, the direction in which the center of gravity G1 of each different refractive index region n04-mb is shifted from each lattice point (intersection of broken lines x1 to x4 and broken lines y1 to y3) in a virtual square lattice in the basic region n04-ma
  • the arrangement pattern is determined by determining the original pattern corresponding to the projection area and the target beam projection pattern according to the phase obtained by inverse Fourier transform. The distance r (see FIG.
  • FIG. 5 is a diagram for explaining an example of an arrangement pattern (rotation method) determined by the rotation method.
  • FIG. 5 shows the configuration of the unit configuration region R (x, y).
  • the distance r from the lattice point to the different refractive index region n04-mb is indicated by r (x, y).
  • the unit constituting region R (x, y) constituting the square lattice is defined by the s axis and the t axis that are orthogonal to each other at the lattice point O (x, y).
  • the s-axis is an axis parallel to the X-axis, and corresponds to the broken lines x1 to x4 shown in FIG.
  • the t-axis is an axis parallel to the Y-axis and corresponds to the broken lines y1 to y3 shown in FIG.
  • the angle formed between the direction from the lattice point O (x, y) toward the center of gravity G1 and the s axis is ⁇ (x, y).
  • the rotation angle ⁇ (x, y) is 0 °
  • the direction of the vector connecting the lattice point O (x, y) and the center of gravity G1 coincides with the positive direction of the s axis.
  • the length of the vector connecting the lattice point O (x, y) and the center of gravity G1 (corresponding to the distance r) is given by r (x, y).
  • the rotation angle ⁇ (x, y) around the lattice point O (x, y) of the gravity center G1 of the different refractive index region n04-mb is the target. It is set independently for each unit configuration region R according to the beam projection pattern (light image).
  • the rotation angle ⁇ (x, y) has a specific value in the unit configuration region R (x, y), but is not necessarily represented by a specific function. That is, the rotation angle ⁇ (x, y) is determined from the phase term of the complex amplitude obtained by converting the target beam projection pattern onto the wave number space and performing a two-dimensional inverse Fourier transform on a certain wave number range of the wave number space.
  • FIG. 6 is a diagram for explaining the relationship between the target beam projection pattern (light image) output from the semiconductor light emitting element 100 and the distribution of the rotation angle ⁇ (x, y) in the phase modulation layer n04-m. .
  • the target beam projection area (the installation surface of the design optical image expressed by the coordinates (x, y, z) in the XYZ orthogonal coordinate system), which is the projection range of the target beam projection pattern, is placed on the wave number space.
  • the Kx-Ky plane obtained by conversion.
  • the Kx axis and the Ky axis that define the Kx-Ky plane are perpendicular to each other, and the projection direction of the target beam projection pattern is changed from the normal direction (Z-axis direction) of the first surface 100a to the first surface 100a. Is correlated with the angle with respect to the normal direction when swung up to (1) to (5).
  • the specific area including the target beam projection pattern is composed of M2 (an integer greater than or equal to 1) ⁇ N2 (an integer greater than or equal to 1) image areas FR each having a square shape. .
  • a virtual square lattice set on the XY plane on the phase modulation layer n04-m is configured by M1 (an integer of 1 or more) ⁇ N1 (an integer of 1 or more) unit configuration regions R. Shall be.
  • M2 an integer of 1 or more
  • N1 an integer of 1 or more
  • the integer M2 need not match the integer M1.
  • the integer N2 need not match the integer N1.
  • the image region FR in the Kx-Ky plane is specified by the coordinate component k x in the Kx axis direction (an integer of 1 to M2) and the coordinate component k y in the Ky axis direction (an integer of 1 to N2).
  • Each of (k x , k y ) is a unit component region R identified by a coordinate component x in the X-axis direction (an integer from 1 to M1) and a coordinate component y in the Y-axis direction (an integer from 1 to N1).
  • the complex amplitude F (x, y) in the unit configuration region R (x, y) obtained by two-dimensional inverse Fourier transform to (x, y) is given by the following equation (8), where j is an imaginary unit.
  • the amplitude term in the complex amplitude F (x, y) of the unit configuration region R (x, y) is A ( The distribution of x, y) corresponds to the intensity distribution on the XY plane.
  • the phase term in the complex amplitude F (x, y) of the unit configuration region R (x, y) is expressed as the distribution of P (x, y), Corresponds to the phase distribution on the -Y plane.
  • the distribution of the rotation angle ⁇ (x, y) of the unit configuration region R (x, y) corresponds to the rotation angle distribution on the XY plane.
  • FIG. 6 shows four quadrants with the center Q as the origin.
  • FIG. 6 shows, as an example, a case where a light image is obtained in the first quadrant and the third quadrant is shown, but it is also possible to obtain images in the second quadrant and the fourth quadrant, or all quadrants.
  • a point-symmetric pattern with respect to the origin is obtained.
  • FIG. 6 shows, as an example, a case where a character “A” is obtained in the third quadrant and a pattern obtained by rotating the character “A” 180 ° in the first quadrant is obtained.
  • a rotationally symmetric optical image for example, a cross, a circle, a double circle, etc.
  • they are overlapped and observed as one optical image.
  • the beam projection pattern (light image) output from the semiconductor light emitting device 100 is a spot, a spot group consisting of three or more points, a straight line, a cross, a line drawing, a lattice pattern, a photograph, a striped pattern, CG (computer graphics), and characters.
  • the optical image corresponds to the designed optical image (original image) expressed by at least one of the above.
  • the rotation angle ⁇ (x, y) of the different refractive index region n04-mb in the unit configuration region R (x, y) is determined by the following procedure.
  • the center of gravity G1 of the different refractive index region n04-mb is only the distance r (value of r (x, y)) from the lattice point O (x, y). They are placed apart.
  • the different refractive index regions n04-mb are arranged in the unit configuration region R (x, y) so that the rotation angle ⁇ (x, y) satisfies the following relationship.
  • ⁇ (x, y) C ⁇ P (x, y) + B
  • C proportional constant, for example 180 ° / ⁇
  • B Arbitrary constant, for example 0 Note that the proportionality constant C and the arbitrary constant B are the same value for all unit constituent regions R.
  • a pattern formed on the Kx-Ky plane projected on the wave number space is converted into a unit configuration region R (x, Y on the XY plane on the phase modulation layer n04-m. y) is subjected to two-dimensional inverse Fourier transform, and the rotation angle ⁇ (x, y) corresponding to the phase term P (x, y) of the complex amplitude F (x, y) is converted into the unit configuration region R (x, y).
  • ⁇ (x, y) corresponding to the phase term P (x, y) of the complex amplitude F (x, y) is converted into the unit configuration region R (x, y).
  • the far-field image of the laser beam after the two-dimensional inverse Fourier transform can be a single or multiple spot shape, circular shape, linear shape, character shape, double annular shape, or Laguerre Gaussian beam shape.
  • the shape can be taken. Since the target beam projection pattern is represented by wave number information in the wave number space (on the Kx-Ky plane), a bitmap image in which the target beam projection pattern is represented by two-dimensional position information, etc. In this case, it is preferable to perform two-dimensional inverse Fourier transform after first converting to wave number information.
  • the intensity distribution (the amplitude term A (x, y) on the XY plane) Distribution
  • the phase distribution (the distribution of the phase term P (x, y) on the XY plane) It can be calculated by using the angle function of MATLAB.
  • the arrangement pattern of the different refractive index regions n04-mb is determined, light of the target beam projection region and the target beam projection pattern can be output from the first surface 100a of the semiconductor light emitting device 100 to the beam projection region.
  • the target beam projection pattern can be arbitrarily determined by the designer, and can be a spot, a spot group consisting of three or more points, a straight line, a line drawing, a cross, a figure, a photograph, CG (computer graphics), a character, and the like.
  • all the different refractive index regions n04-mb have the same figure, the same area, and / or the same distance r.
  • the plurality of different refractive index regions n04-b may be formed so as to be superposed by a translation operation or a combination of a translation operation and a rotation operation. In this case, generation of noise light and zero-order light that becomes noise in the beam projection region can be suppressed.
  • the 0th-order light is light that is output in parallel with the Z-axis direction, and is light that is not phase-modulated in the phase modulation layer n04-m.
  • FIG. 7 shows an example of the phase distribution of the complex amplitude distribution obtained by inverse Fourier transform of the target beam projection pattern and the corresponding original pattern.
  • FIG. 7A shows an example of a target beam projection pattern obtained when a driving current is supplied from the second surface side electrode 108-1
  • FIG. 7B shows an example of a driving current from the second surface side electrode 108-2.
  • An example of a target beam projection pattern obtained when supplied is shown.
  • FIGS. 7 (c) and 7 (d) show complex amplitude distributions obtained by inverse Fourier transform of the original patterns corresponding to the beam projection patterns in FIGS. 7 (a) and 7 (b), respectively.
  • the phase distribution of is shown.
  • FIG. 7C and FIG. 7D are composed of elements of 704 ⁇ 704, and represent an angle distribution of 0 to 2 ⁇ depending on color shading. The black part represents the angle 0.
  • FIG. 8 is a block diagram illustrating a configuration of a light emitting device including the semiconductor light emitting element 100.
  • the light emitting device 140 includes the semiconductor light emitting element 100, a power supply circuit 141, a control signal input circuit 142, and a drive circuit 143.
  • the power supply circuit 141 supplies power to the drive circuit 143 and the semiconductor light emitting element 100.
  • the control signal input circuit 142 transmits a control signal supplied from the outside of the light emitting device 140 to the drive circuit 143.
  • the drive circuit 143 supplies a drive current to the semiconductor light emitting element 100.
  • the drive circuit 143 and the semiconductor light emitting device 100 are connected by two drive lines 144-1 and 144-2 for supplying a drive current and one common potential line 145.
  • the drive lines 144-1 and 144-2 are connected to the second surface side electrodes 108-1 and 108-2, respectively.
  • the common potential line 145 is connected to the first surface side electrode 110.
  • the semiconductor light emitting device 100 shown above the drive circuit 143 and the semiconductor light emitting device 100 shown below the drive circuit 143 are respectively the first surface and the second surface of one semiconductor light emitting device 100. Represents a surface.
  • the drive lines 144-1 and 144-2 may be driven alternatively or simultaneously according to the application.
  • the drive circuit 143 may be configured separately from the semiconductor light emitting element 100 or may be integrally formed on the common substrate layer 101 of the semiconductor light emitting element 100.
  • the light emitting device 140 including the semiconductor light emitting element 100 configured as described above operates as follows. That is, a drive current is supplied from the drive circuit 143 between any of the drive lines 144-1 and 144-2 and the common potential line 145. In the light emitting portion corresponding to the second surface side electrode connected to the drive line supplied with the drive current, recombination of electrons and holes occurs in the active layer 103, and the active layer 103 in the light emitting portion emits light. The light obtained by the light emission is efficiently confined by the first cladding layer 102 and the second cladding layer 106.
  • the light emitted from the active layer 103 enters the corresponding phase modulation region, and a predetermined mode is formed by the confinement effect by two-dimensional feedback by the phase modulation region.
  • a predetermined mode is formed by the confinement effect by two-dimensional feedback by the phase modulation region.
  • the light incident on the phase modulation region oscillates in a predetermined mode.
  • the light having a predetermined oscillation mode undergoes phase modulation according to the arrangement pattern of the different refractive index regions, and the light subjected to the phase modulation is the first surface side as light expressing a beam projection pattern according to the arrangement pattern.
  • the light is emitted from the electrode side to the outside (beam projection region).
  • the semiconductor light emitting device 100 is a single device including the phase modulation layer 104 having a pair of phase modulation regions 104-1 and 104-2. Therefore, unlike a configuration in which a plurality of semiconductor light emitting elements each having one phase modulation region (phase modulation layer) are arranged on the support substrate, a process in which the plurality of semiconductor light emitting elements are arranged on the support substrate is necessary. And not. Therefore, according to this embodiment, the irradiation of the light of the target beam projection pattern to the target beam projection area is easily and highly accurately realized.
  • the active layer 103, the phase modulation layer 104, the first cladding layer 102, the second cladding layer 106, and the common substrate layer 101 have the phase modulation region 104-1 when viewed from the Z-axis direction.
  • 104-2 is provided with a separation region 112 for electrically and optically separating the corresponding regions.
  • the adjacent phase modulation regions 104-1 and 104-2 are electrically and optically separated by the separation region 112, so that the occurrence of crosstalk between the adjacent phase modulation regions 104-1 and 104-2 is suppressed. Is done. As a result, irradiation of the light of the desired beam projection pattern to the desired beam projection region is realized with higher accuracy.
  • the beam projection regions are equal even when the drive current is supplied from any of the second surface side electrodes 108-1 and 108-2.
  • An arrangement pattern may be set (however, the beam projection pattern is arbitrary). With such a configuration, various applications other than the application example (application example in which a laser beam is scanned with respect to an object) of the semiconductor light emitting device disclosed in Patent Document 1 are possible.
  • both the arrangement pattern in the first phase modulation area 104-1 and the arrangement pattern in the second phase modulation area 104-2 are the same beam projection area and the same beam projection pattern. Is set to be obtained.
  • the beam projection pattern is, for example, a beam projection pattern having uniform brightness over the whole or part of the beam projection area.
  • a drive current is supplied from both the second surface side electrodes 108-1 and 108-2.
  • dark illumination is sufficient, either of the second surface side electrodes 108-1 and 108-2 is used.
  • a drive current is supplied from only one of them.
  • both the arrangement pattern in the first phase modulation area 104-1 and the arrangement pattern in the second phase modulation area 104-2 have the same beam projection pattern in the same beam projection area. It is set to be obtained.
  • the beam projection area is matched with the position where the hole of the workpiece is to be drilled, and the beam projection pattern is a pattern of the shape of the hole to be drilled.
  • a pulse current is alternately supplied from both of the second surface side electrodes 108-1 and 108-2. In this case, the pulse interval of each light emitting part can be increased. For this reason, it is possible to obtain a higher peak output from each light emitting unit, and it is possible to obtain a larger output.
  • the phase modulation regions 104-1 and 104- are set so that the beam projection patterns are equal even when the drive current is supplied from any of the second surface side electrodes 108-1 and 108-2.
  • the arrangement pattern in each of the two may be determined (however, the beam projection area is arbitrary).
  • various applications other than the application example (application example in which the laser beam is scanned with respect to the object) of the semiconductor light emitting element disclosed in Patent Document 1 are possible.
  • the second embodiment is an embodiment in which there are three or more pairs of phase modulation regions and second surface side electrodes that are two (a pair) in the first embodiment, and they are arranged one-dimensionally.
  • the second embodiment is an embodiment in which the number of the light emitting units, which was two in the first embodiment, is increased to three or more and the light emitting units are arranged one-dimensionally. Except for this point, the second embodiment is the same as the first embodiment.
  • FIG. 9 is a view of the semiconductor light emitting device 200 according to the second embodiment as viewed from the first surface side.
  • FIG. 10 is a view of the semiconductor light emitting device 200 as viewed from the second surface side.
  • FIG. 11 is a cross-sectional view taken along line XX of FIGS. 9 to 11 show an example in which five light emitting units (first light emitting unit to fifth light emitting unit) are arranged in a straight line, but the number of light emitting units may be other than five.
  • the one-dimensional arrangement may be on a curve.
  • the semiconductor light emitting device 200 has a first surface 200a and a second surface 200b, and outputs light from the first surface 200a as a light emitting surface.
  • the second surface 200b functions as a support surface.
  • the semiconductor light emitting device 200 includes a common substrate layer 201, an active layer 203, a phase modulation layer 204, a first cladding layer 202, a second cladding layer 206, and a plurality of second surface side electrodes 208-1 to 208-. 5 and the first surface side electrode 210.
  • the phase modulation layer 204 includes a plurality of phase modulation regions 204-1 to 204-5 that are optically coupled to the active layer 203.
  • a laminated structure is configured by at least the active layer 203 and the phase modulation layer 204 including the plurality of phase modulation regions 204-1 to 204-5.
  • the first cladding layer 202 is located on the side where the first surface 200a is disposed with respect to the laminated structure (including at least the active layer 203 and the phase modulation layer 204).
  • the second cladding layer 206 is located on the side where the second surface 200b is disposed with respect to the stacked structure (including at least the active layer 203 and the phase modulation layer 204).
  • the second surface side electrodes 208-1 to 208-5 are on the side where the second surface 200b is disposed with respect to the second cladding layer 206, and positions corresponding to the phase modulation regions 204-1 to 204-5, respectively. Is arranged.
  • the first surface side electrode 210 is located on the side where the first surface 200 a is disposed with respect to the first cladding layer 202.
  • the phase modulation regions 204-1 to 204-5 respectively include basic regions 204-1a to 204-5a having a first refractive index and a plurality of different refractive index regions having a second refractive index different from the first refractive index. 204-1b to 204-5b.
  • the plurality of different refractive index regions 204-1b to 204-5b are locations where the center of gravity G1 is shifted by a predetermined distance r from each lattice point O in the virtual square lattice in the basic regions 204-1a to 204-5a.
  • the arrangement pattern of the different refractive index regions 204-1b to 204-5b in each of the phase modulation regions 204-1 to 204-5 is the second surface side electrode 208-1 corresponding to the phase modulation regions 204-1 to 204-5.
  • the beam projection pattern expressed by the light output from the first surface 200a when the drive current is supplied from ⁇ 208-5 and the beam projection that is the projection range of the beam projection pattern are the target beam projection pattern and the target beam. It is set to be a projection area.
  • the beam projection area of the light output when the driving current is supplied from the second surface side electrodes 208-1 to 208-5 may be all the same, or at least a part is different from the others. Also good. Further, the beam projection pattern of the light output when the drive current is supplied from the second surface side electrodes 208-1 to 208-5 may be all the same, or at least partly different from the others. It may be.
  • the active layer 203, the phase modulation layer 204, the first cladding layer 202, the second cladding layer 206, and the common substrate layer 201 reach the common substrate layer 201 from the second surface 200b toward the common substrate layer 201.
  • a separation region 212 extending up to is provided.
  • the isolation region 212 overlaps with the phase modulation regions 204-1 to 204-5 when viewed from the Z-axis direction (stacking direction), the active layer 203, the first cladding layer 202, the second cladding layer 206, and the first cladding layer.
  • 202 and the second cladding layer 206 respectively extend from the second surface 200b toward the common substrate layer 201 so as to electrically and optically separate corresponding regions.
  • the thickness of the portion of the common substrate layer 201 positioned below the isolation region 212 is Z It is less than half of the thickness of the common substrate layer 201 along the axial direction, and typically less than 70 ⁇ m.
  • each part of the semiconductor light emitting device 100 divided by the position of the isolation region 212 can be regarded as an independent light emitting part (first light emitting part to fifth light emitting part).
  • the manufacturing process of the separation region 212 is the same as that in the first embodiment.
  • the first surface side electrode 210 has openings at positions corresponding to the phase modulation regions 204-1 to 204-5 and the second surface side electrodes 208-1 to 208-5. 210-1 to 210-5.
  • the first surface side electrode 210 may be a transparent electrode instead of an electrode having an opening.
  • the vertical relationship between the active layer 203 and the phase modulation layer 204 may be opposite to the vertical relationship shown in FIG. FIG. 11 also shows the common substrate layer 201, the upper light guide layer 205b, the lower light guide layer 205a, the contact layer 207, the insulating layer 209, and the antireflection layer 211. It is not necessary to have these.
  • the manufacturing method including the main processes excluding the manufacturing process of each layer, each region, the region, and the separation region described above is based on the description in Patent Document 1 as in the first embodiment. Those skilled in the art can appropriately select, but some examples are shown below. That is, an example of the material or structure of each layer shown in FIG. 11 is as follows.
  • the common substrate layer 201 is made of GaAs.
  • the first cladding layer 202 is made of AlGaAs.
  • the active layer 203 has a multiple quantum well structure MQW (barrier layer: AlGaAs / well layer: InGaAs).
  • the phase modulation layer 204 includes basic regions 204-1a to 204-5a and a plurality of different refractive index regions 204-1b to 204-5b embedded in the basic regions 204-1a to 204-5a.
  • the basic regions 204-1a to 204-5a are made of GaAs.
  • the plurality of different refractive index regions 204-1b to 204-5b are made of AlGaAs.
  • the upper light guide layer 205b and the lower light guide layer 205a are made of AlGaAs.
  • the second cladding layer 206 is made of AlGaAs.
  • the contact layer 207 is made of GaAs.
  • the insulating layer 209 is made of SiO 2 or silicon nitride.
  • the antireflection layer 211 is made of a dielectric single layer film or dielectric multilayer film such as silicon nitride (SiN) or silicon dioxide (SiO 2 ).
  • the isolation region 212 is formed by a semiconductor layer modified by high-intensity light (electric field), a semiconductor layer insulated by any of impurity diffusion and ion implantation, or any of dry etching and wet etching It is a slit (gap).
  • a specific method of modification by high intensity light (electric field) there are, for example, processing by a nanosecond laser and processing by an ultrashort pulse laser.
  • the plurality of different refractive index regions 204-1b to 204-5b may be holes filled with argon, nitrogen, air, or the like.
  • the common substrate layer 201 and the first cladding layer 202 are doped with N-type impurities. P-type impurities are added to the second cladding layer 206 and the contact layer 207.
  • the energy band gap between the first cladding layer 202 and the second cladding layer 206 is larger than the energy band gap between the upper light guide layer 205b and the lower light guide layer 205a.
  • the energy band gap of the upper light guide layer 205b and the lower light guide layer 205a is set to be larger than the energy band gap of the multiple quantum well structure MQW of the active layer 203.
  • FIG. 12 and FIG. 13 show the phase distribution of the complex amplitude distribution obtained by performing inverse Fourier transform on the target beam projection pattern and the corresponding original pattern in the present embodiment and the third embodiment described later.
  • An example is shown.
  • 12A to 12C show target beam projection patterns obtained when a drive current is supplied from the second surface side electrodes of the first light emitting unit, the third light emitting unit, and the fifth light emitting unit, respectively.
  • An example is shown.
  • 12D to 12F show complex amplitude distributions obtained by performing inverse Fourier transform on the original patterns corresponding to the beam projection patterns in FIGS. 12A to 12C, respectively. The phase distribution of is shown.
  • FIGS. 12A to 12C show the phase distribution of the complex amplitude distribution obtained by performing inverse Fourier transform on the target beam projection pattern and the corresponding original pattern in the present embodiment and the third embodiment described later.
  • 12A to 12C show target beam projection patterns obtained when a drive current is supplied from the second surface side electrodes of the first light emitting unit,
  • FIGS. 13 (d) to 13 (f) show complex amplitude distributions obtained by performing inverse Fourier transform on the original patterns corresponding to the beam projection patterns in FIGS. 13 (a) to 13 (c), respectively.
  • the phase distribution of is shown.
  • 12 (d) to 12 (f) and FIGS. 13 (d) to 13 (f) are each composed of elements of 704 ⁇ 704, and the distribution of angles from 0 to 2 ⁇ is represented by the color shade. Represents.
  • the black part represents the angle 0.
  • FIG. 14 is a block diagram illustrating a configuration of a light emitting device including the semiconductor light emitting element 200.
  • the light emitting device 240 includes a semiconductor light emitting element 200, a power supply circuit 241, a control signal input circuit 242, and a drive circuit 243.
  • the power supply circuit 241 supplies power to the drive circuit 243 and the semiconductor light emitting element 200.
  • the control signal input circuit 242 transmits a control signal supplied from the outside of the light emitting device 240 to the drive circuit 243.
  • the drive circuit 243 supplies a drive current to the semiconductor light emitting element 200.
  • the drive circuit 243 and the semiconductor light emitting element 200 are connected by a plurality of drive lines 244-1 to 244-5 for supplying a drive current and one common potential line 245.
  • the drive lines 244-1 to 244-5 are connected to the second surface side electrodes 208-1 to 208-5, respectively.
  • the common potential line 245 is connected to the first surface side electrode 210.
  • the semiconductor light emitting element 200 shown above the drive circuit 243 and the semiconductor light emitting element 200 shown below the drive circuit 243 are respectively the first surface and the second surface of one semiconductor light emitting element 200. Represents a surface.
  • the drive lines 244-1 to 244-5 may be driven alternatively according to the application, or at least two may be driven simultaneously.
  • the drive circuit 243 may be configured separately from the semiconductor light emitting element 200 or may be integrally formed on the common substrate layer 201 of the semiconductor light emitting element 200.
  • the light emitting device 240 including the semiconductor light emitting element 200 configured as described above operates as follows. That is, a drive current is supplied from the drive circuit 243 to any one of the drive lines 244-1 to 244-5 and the common potential line 245. In the light emitting portion corresponding to the second surface side electrode connected to the drive line supplied with the drive current, recombination of electrons and holes occurs in the active layer 203, and the active layer 203 in the light emitting portion emits light. The light obtained by the light emission is efficiently confined by the first cladding layer 202 and the second cladding layer 206. The light emitted from the active layer 203 enters the corresponding phase modulation region, and forms a predetermined mode by the confinement effect by two-dimensional feedback by the phase modulation region.
  • the light incident on the phase modulation region oscillates in a predetermined mode.
  • the light having a predetermined oscillation mode undergoes phase modulation according to the arrangement pattern of the different refractive index regions, and the light subjected to the phase modulation is the first surface side as light expressing a beam projection pattern according to the arrangement pattern.
  • the light is emitted from the electrode side to the outside (beam projection region).
  • the semiconductor light emitting device 200 is a single device including the phase modulation layer 204 having a plurality of phase modulation regions 204-1 to 204-5. Therefore, unlike a configuration in which a plurality of semiconductor light emitting elements each having one phase modulation region (phase modulation layer) are arranged on the support substrate, a process in which the plurality of semiconductor light emitting elements are arranged on the support substrate is necessary. And not. Therefore, the irradiation of the light of the target beam projection pattern to the target beam projection area can be realized easily and with high accuracy.
  • the active layer 203, the phase modulation layer 204, the first cladding layer 202, the second cladding layer 206, and the common substrate layer 201 are moved from the second surface 200b toward the common substrate layer 201.
  • a separation region 212 extending until reaching the common substrate layer 201 is provided.
  • the adjacent phase modulation regions 204-1 to 204-5 are electrically and optically separated by the separation region 212, so that the occurrence of crosstalk between the adjacent phase modulation regions 204-1 to 204-5 is suppressed. Is done. As a result, irradiation of the light of the desired beam projection pattern to the desired beam projection region is realized with higher accuracy.
  • the phase modulation areas 204-1 to 204- are set so that the beam projection areas become equal when the drive current is supplied from any of the second surface side electrodes 208-1 to 208-5. 5 may be set (however, the beam projection pattern is arbitrary). In the case of such a configuration, various applications other than the application example (application example in which a laser beam is scanned with respect to an object) of the semiconductor light emitting element disclosed in Patent Document 1 are possible.
  • the application (A) in the second embodiment there is an application in which the illumination shown as the application (A) in the first embodiment is changed so as to be switchable in multiple stages.
  • the laser processing shown as application (c) in the first embodiment is changed to sequentially drive a plurality of second surface side electrodes.
  • the phase modulation regions 204-1 to 204- are set so that the beam projection patterns are equal even when the drive current is supplied from any of the second surface side electrodes 208-1 to 208-5. 5 may be set (however, the beam projection area is arbitrary).
  • an application similar to the application example of the semiconductor light emitting device disclosed in Patent Document 1 application example in which the laser beam is scanned with respect to the object
  • Various applications are also possible.
  • applications different from the application example shown in Patent Document 1 in addition to the above-mentioned applications (a) to (c), it is possible to apply to an illumination of a type that irradiates an arbitrary part at a desired timing. Become.
  • the third embodiment is an embodiment in which the one-dimensional arrangement of the phase modulation region and the second surface side electrode in the second embodiment is changed to a two-dimensional arrangement.
  • the second embodiment is an embodiment in which the one-dimensional arrangement of the plurality of light emitting units is changed to a two-dimensional arrangement as in the first embodiment. Except for such a change, the second embodiment. It is the same.
  • FIGS. 15 to 17 the structure of the semiconductor light emitting device 300 according to the third embodiment will be described.
  • 15 is a diagram of the semiconductor light emitting device 300 according to the third embodiment as viewed from the first surface side
  • FIG. 16 is a diagram of the semiconductor light emitting device 300 as viewed from the second surface side
  • FIG. FIG. 16 is a sectional view taken along line XVI-XVI.
  • 15 to 17 show an example in which 15 light emitting units (first light emitting unit to 15th light emitting unit) are arranged in 3 rows and 5 columns, but the number of light emitting units is other than 15.
  • the two-dimensional arrangement may be arbitrary.
  • the semiconductor light emitting device 300 has a first surface 300a and a second surface 300b, and outputs light from the first surface 300a as a light emitting surface.
  • the second surface 300b functions as a support surface.
  • the semiconductor light emitting device 300 includes a common substrate layer 301, an active layer 303, a phase modulation layer 304, a first cladding layer 302, a second cladding layer 306, and a plurality of second surface side electrodes 308-1 to 308-. 15 and a first surface side electrode 310.
  • the phase modulation layer 304 includes a plurality of phase modulation regions 304-1 to 304-15 that are optically coupled to the active layer 303.
  • a laminated structure is constituted by at least the active layer 303 and the phase modulation layer 304 including the plurality of phase modulation regions 304-1 to 304-15.
  • the first cladding layer 302 is located on the side where the first surface 300a is disposed with respect to the laminated structure (including at least the active layer 303 and the phase modulation layer 304).
  • the second cladding layer 306 is located on the side where the second surface 300b of the laminated structure (including at least the active layer 303 and the phase modulation layer 304) is disposed.
  • the second surface side electrodes 308-1 to 308-15 are on the side where the second surface 300b is disposed with respect to the second cladding layer 306, and positions corresponding to the phase modulation regions 304-1 to 304-15, respectively. Is arranged.
  • the first surface side electrode 310 is located on the side where the first surface 300 a is disposed with respect to the first cladding layer 302.
  • the phase modulation regions 304-1 to 304-15 each include a plurality of different refractive index regions 304 having a second refractive index different from the basic regions 304-1a to 304-15a having the first refractive index. -1b to 304-15b.
  • the plurality of different refractive index regions 304-1b to 304-15b are locations where the center of gravity G1 is shifted from each lattice point O in the virtual square lattice in the basic regions 304-1a to 304-15a by a predetermined distance r.
  • the arrangement pattern of the different refractive index regions 304-1b to 304-15b in each of the phase modulation regions 304-1 to 304-15 is the second surface side electrode 308- corresponding to the phase modulation regions 304-1 to 304-15.
  • a beam projection pattern expressed by light output from the first surface 300a when a drive current is supplied from 1 to 308-15 and a beam projection area that is a projection range of the beam projection pattern are a target beam projection pattern and It is set to coincide with the target beam projection area.
  • the beam projection areas of the light output when the drive current is supplied from the second surface side electrodes 308-1 to 308-15 may all be the same, or at least part of them may be different from the others. Also good. Also, the beam projection pattern of the light output when the drive current is supplied from the second surface side electrodes 308-1 to 308-15 may be all the same, or at least partly different from the others. It may be.
  • the active layer 303, the phase modulation layer 304, the first cladding layer 302, the second cladding layer 306, and the common substrate layer 301 reach the common substrate layer 301 from the second surface 300b toward the common substrate layer 301.
  • a separation region 312 extending up to is provided.
  • the isolation region 312 is an active layer 303, a first cladding layer 302, a second cladding layer 306, and a first cladding layer that overlap with the phase modulation regions 304-1 to 204-5 when viewed from the Z-axis direction (stacking direction).
  • 302 and the second cladding layer 306 respectively extend from the second surface 300b toward the common substrate layer 301 so as to electrically and optically separate corresponding regions.
  • the thickness of the portion of the common substrate layer 301 located below the isolation region 312 is Z It is less than half of the thickness of the common substrate layer 201 along the axial direction, and typically less than 70 ⁇ m.
  • each part of the semiconductor light emitting device 300 divided by the position of the isolation region 312 can be regarded as an independent light emitting part (first light emitting part to 15th light emitting part).
  • the manufacturing process of the separation region 312 is the same as that in the first embodiment.
  • the first surface side electrode 310 has openings at positions corresponding to the phase modulation regions 304-1 to 304-15 and the second surface side electrodes 308-1 to 308-15. 310-1 to 310-15.
  • the first surface side electrode 310 may be a transparent electrode instead of the electrode having the opening.
  • the vertical relationship between the active layer 303 and the phase modulation layer 304 may be opposite to the vertical relationship shown in FIG. FIG. 17 also shows the common substrate layer 301, the upper light guide layer 305b, the lower light guide layer 305a, the contact layer 307, the insulating layer 309, and the antireflection layer 311. It is not necessary to have these.
  • the manufacturing method including the main processes excluding the manufacturing process of each layer, each region, the region, and the separation region described so far are the same as those in the first embodiment and the second embodiment.
  • a person skilled in the art can select as appropriate based on the description, but some examples are shown below. That is, an example of the material or structure of each layer shown in FIG. 17 is as follows.
  • the common substrate layer 301 is made of GaAs.
  • the first cladding layer 302 is made of AlGaAs.
  • the active layer 303 has a multiple quantum well structure MQW (barrier layer: AlGaAs / well layer: InGaAs).
  • the phase modulation layer 304 includes basic regions 304-1a to 304-15a and a plurality of different refractive index regions 304-1b to 304-15 embedded in the basic regions 304-1a to 304-15a.
  • the basic regions 304-1a to 304-15a are made of GaAs.
  • the plurality of different refractive index regions 304-1b to 304-15b are made of AlGaAs.
  • the upper light guide layer 305b and the lower light guide layer 305a are made of AlGaAs.
  • the second cladding layer 306 is made of AlGaAs.
  • the contact layer 307 is made of GaAs.
  • the insulating layer 309 is made of SiO 2 or silicon nitride.
  • the antireflection layer 311 is made of a dielectric single layer film or a dielectric multilayer film such as silicon nitride (SiN) or silicon dioxide (SiO 2 ).
  • the isolation region 312 is a semiconductor layer modified by high-intensity light (electric field), a semiconductor layer insulated by one of impurity diffusion and ion implantation, or a slit (gap) formed by dry etching or wet etching. It is.
  • high intensity light there are, for example, processing by a nanosecond laser and processing by an ultrashort pulse laser.
  • the plurality of different refractive index regions 304-1b to 304-15b may be holes filled with argon, nitrogen, air, or the like.
  • an N-type impurity is added to the common substrate layer 301 and the first cladding layer 302.
  • P-type impurities are added to the second cladding layer 306 and the contact layer 307.
  • the energy band gap between the first cladding layer 302 and the second cladding layer 306 is larger than the energy band gap between the upper light guide layer 305b and the lower light guide layer 305a.
  • the energy band gap between the upper light guide layer 305 b and the lower light guide layer 305 a is set to be larger than the energy band gap of the multiple quantum well structure MQW of the active layer 303.
  • FIG. 18 is a block diagram illustrating a configuration of a light emitting device including the semiconductor light emitting element 300.
  • the light emitting device 340 includes a semiconductor light emitting element 300, a power supply circuit 341, a control signal input circuit 342, and a drive circuit 343.
  • the power supply circuit 341 supplies power to the drive circuit 343 and the semiconductor light emitting element 300.
  • the control signal input circuit 342 transmits a control signal supplied from the outside of the light emitting device 340 to the drive circuit 343.
  • the drive circuit 343 supplies a drive current to the semiconductor light emitting element 300.
  • the drive circuit 343 and the semiconductor light emitting element 300 are connected by a plurality of drive lines 344-1 to 344-15 for supplying a drive current and one common potential line 345.
  • the drive lines 344-1 to 344-15 are connected to the second surface side electrodes 308-1 to 308-15, respectively, and the common potential line 345 is connected to the first surface side electrode 310.
  • the semiconductor light emitting device 300 shown above the drive circuit 343 and the semiconductor light emitting device 300 shown below the drive circuit 343 are respectively the first surface and the second surface of one semiconductor light emitting device 300. Represents a surface.
  • the drive lines 344-1 to 344-15 may be driven alternatively according to the application, or at least two may be driven simultaneously.
  • the drive circuit 343 may be configured separately from the semiconductor light emitting element 300 or may be integrally formed on the common substrate layer 301 of the semiconductor light emitting element 300.
  • the light emitting device 340 including the semiconductor light emitting element 300 configured as described above operates as follows. That is, a drive current is supplied from the drive circuit 343 between any of the drive lines 344-1 to 344-15 and the common potential line 345. In the light emitting portion corresponding to the second surface side electrode connected to the driving line supplied with the driving current, recombination of electrons and holes occurs in the active layer 303, and the active layer 303 in the light emitting portion emits light. The light obtained by the light emission is efficiently confined by the first cladding layer 302 and the second cladding layer 306. The light emitted from the active layer 303 enters the corresponding phase modulation region, and forms a predetermined mode by the confinement effect by two-dimensional feedback by the phase modulation region.
  • the light incident on the phase modulation region oscillates in a predetermined mode.
  • the light that has formed a predetermined oscillation mode undergoes phase modulation according to the arrangement pattern of the different refractive index regions, and the light subjected to the phase modulation is first as light having a beam projection region and a beam projection pattern according to the arrangement pattern.
  • the light is emitted from the surface side electrode side to the outside.
  • the semiconductor light emitting device 300 is a single device including the phase modulation layer 304 having a plurality of phase modulation regions 304-1 to 304-15. Therefore, unlike a configuration in which a plurality of semiconductor light emitting elements each having one phase modulation region (phase modulation layer) are arranged on the support substrate, a process in which the plurality of semiconductor light emitting elements are arranged on the support substrate is necessary. And not. Therefore, the irradiation of the light of the target beam projection pattern to the target beam projection area can be realized easily and with high accuracy.
  • the active substrate 303, the phase modulation layer 304, the first cladding layer 302, the second cladding layer 306, and the common substrate layer 301 are formed from the second surface 300 b toward the common substrate layer 301.
  • a separation region 312 is provided that extends until it reaches the layer 301. Since the adjacent phase modulation regions 304-1 to 304-15 are electrically and optically separated by such a separation region 312, crosstalk between the adjacent phase modulation regions 304-1 to 304-15 is reduced. Occurrence is suppressed. As a result, irradiation of the light of the desired beam projection pattern to the desired beam projection region is realized with higher accuracy.
  • the phase modulation areas 304-1 to 304-15 are set so that the beam projection areas are equal even when the drive current is supplied from any of the second surface side electrodes 308-1 to 308-15.
  • the arrangement pattern in each may be defined.
  • various applications other than the application example (application example in which a laser beam is scanned with respect to an object) of the semiconductor light emitting element disclosed in Patent Document 1 are possible. Possible applications are the same as in the second embodiment.
  • the phase modulation regions 304-1 to 304- are set so that the beam projection patterns are equal even when the drive current is supplied from any of the second surface side electrodes 308-1 to 308-15.
  • the arrangement pattern in each of 15 may be set.
  • an application similar to the application example of the semiconductor light emitting device disclosed in Patent Document 1 application example in which the laser beam is scanned with respect to the object
  • Various applications are also possible. Possible applications in this case are the same as in the second embodiment.
  • the light output extracted from the first surface side in the first embodiment is changed to be extracted from the second surface side. According to this, since the light output does not pass through the common substrate layer, the absorption of the output light by the common substrate layer can be eliminated, and the attenuation of the output light and the heat generation of the common substrate layer can be prevented. Except for such a change, the second embodiment is the same as the first embodiment.
  • FIG. 19 is a view of the semiconductor light emitting device 100B according to the fourth embodiment as viewed from the first surface side.
  • FIG. 20 is a view of the semiconductor light emitting device 100B as viewed from the second surface side.
  • FIG. 21 is a sectional view taken along line XX-XX in FIGS.
  • the semiconductor light emitting device 100B has a first surface 100Ba and a second surface 100Bb, and unlike the first to third embodiments, the second surface as a light emitting surface. Light is output from 100 Bb.
  • the first surface 100Ba functions as a support surface.
  • the semiconductor light emitting device 100B includes a common substrate layer 101B, an active layer 103B, a phase modulation layer 104B, a first cladding layer 102B, a second cladding layer 106B, and a pair of second surface side electrodes 108B-1 and 108B-. 2 and a pair of first surface side electrodes 110B-1 and 110B-2.
  • the phase modulation layer 104B has a pair of phase modulation regions 104B-1 and 104B-2 that are optically coupled to the active layer 103B.
  • a laminated structure is constituted by at least the phase modulation layer 104B including the active layer 103B and the pair of phase modulation regions 104B-1 and 104B-2.
  • the first cladding layer 102B is located on the side where the first surface 100Ba is disposed with respect to the stacked structure (including at least the active layer 103B and the phase modulation layer 104B).
  • the second cladding layer 106B is located on the side where the second surface 100Bb is disposed with respect to the laminated structure (including at least the active layer 103B and the phase modulation layer 104B).
  • the second surface side electrodes 108B-1 and 108B-2 are on the side where the second surface 100Bb is disposed with respect to the second cladding layer 106B, and positions corresponding to the phase modulation regions 104B-1 and 104B-2, respectively. Is arranged.
  • the first surface side electrodes 110B-1 and 110B-2 are located on the side where the first surface 100Ba is disposed with respect to the first cladding layer 102.
  • Each of the phase modulation regions 104B-1 and 104B-2 includes a plurality of different refractive index regions 104B- having a second refractive index different from the basic regions 104B-1a and 104B-1b having the first refractive index. 2a, 104B-2b.
  • the plurality of different refractive index regions 104B-1b and 104B-2b are locations where the center of gravity G1 is shifted from each lattice point O in the virtual square lattice in the basic regions 104B-1a and 104-2a by a predetermined distance r.
  • the arrangement pattern of the plurality of different refractive index regions 104B-1b and 104B-2b in each of the phase modulation regions 104B-1 and 104B-2 is the second surface side electrode 108B corresponding to the phase modulation region 104B-1 or 104B-2.
  • -1 or 108B-2 when a drive current is supplied a beam projection pattern expressed by light output from the second surface 100Bb and a beam projection area that is a projection range of the beam projection pattern are a target beam projection pattern And the target beam projection area.
  • the active layer 103B, the phase modulation layer 104B, the first cladding layer 102B, the second cladding layer 106B, and the common substrate layer 101B reach the common substrate layer 101B from the second surface 100Bb toward the common substrate layer 101B.
  • a separation region 112 ⁇ / b> B extending to the top is provided.
  • the isolation region 112B includes the active layer 103B, the first cladding layer 102B, the second cladding layer 106B, and the first cladding layer that overlap with the phase modulation regions 104B-1 and 104B-2 when viewed from the Z-axis direction (stacking direction).
  • the corresponding regions in 102B and the second cladding layer 106B extend from the second surface 100Bb toward the common substrate layer 101B so as to electrically and optically separate the corresponding regions.
  • the thickness of the portion of the common substrate layer 101B located below the isolation region 112B is equal to or less than half the thickness of the common substrate layer 101B along the Z-axis direction (stacking direction), and typically equal to or less than 70 ⁇ m.
  • the first surface side electrode is divided into two.
  • the two first surface side electrodes 110B-1 and 110B-2 are collectively referred to as a “first surface side electrode”. . Therefore, “the distance between the end surface 112Ba on the first surface side electrodes 110B-1 and 110B-2 side of the separation region 112B and the first surface side electrodes 110B-1 and 110B-2” (the separation region of the common substrate layer 101B).
  • the thickness of the unformed portion is defined as one flat surface including the surface on which the common substrate layer 101B is disposed on both the first surface side electrode 110B-1 and the first surface side electrode 110B-2, and the end surface. Refers to the distance to 112Ba.
  • each part of the semiconductor light emitting device 100B divided by the position of the isolation region 112B can be regarded as an independent light emitting part (first light emitting part, second light emitting part).
  • the manufacturing process of the separation region 112B is the same as that of the first embodiment.
  • the second surface side electrodes 108B-1 and 108B-2 are connected to the phase modulation regions 104B-1 and 104B-2 and the first surface side electrodes 110B-1 and 110B-2. Openings 108B-1a and 108B-2a are provided at corresponding positions.
  • the second surface side electrodes 108B-1 and 108B-2 may be transparent electrodes instead of the electrodes having openings.
  • the vertical relationship between the active layer 103B and the phase modulation layer 104B may be opposite to the vertical relationship shown in FIG. Further, there may be a DBR layer 120B between the common substrate layer 101B and the first cladding layer 102B for the purpose of reducing light absorption in the common substrate layer 101B.
  • the DBR layer 120B may be located at other locations as long as it is between the phase modulation layer 104B and the common substrate layer 101B.
  • FIG. 21 also shows the common substrate layer 101B, the upper light guide layer 105Bb, the lower light guide layer 105Ba, the contact layer 107B, the insulating layer 109, and the antireflection layer 111B. It is not necessary to have these.
  • the common substrate layer 101B is made of GaAs.
  • the first cladding layer 102B is made of AlGaAs.
  • the active layer 103B has a multiple quantum well structure MQW (barrier layer: AlGaAs / well layer: InGaAs).
  • the phase modulation layer 104B includes basic regions 104B-1a and 104B-2a and a plurality of different refractive index regions 104B-1b and 104B-2b embedded in the basic regions 104B-1a and 104B-2a.
  • the basic regions 104B-1a and 104B-2a are made of GaAs.
  • the plurality of different refractive index regions 104B-1b and 104B-2b are made of AlGaAs.
  • the upper light guide layer 105Bb and the lower light guide layer 105Ba are made of AlGaAs.
  • the second cladding layer 106B is made of AlGaAs.
  • the contact layer 107B is made of GaAs.
  • the insulating layer 109B is made of SiO 2 or silicon nitride.
  • the antireflection layer 111B is made of a dielectric single layer film or a dielectric multilayer film such as silicon nitride (SiN) or silicon dioxide (SiO 2 ).
  • the isolation region 112B is formed by a semiconductor layer modified by high-intensity light (electric field), a semiconductor layer insulated by any of impurity diffusion and ion implantation, or any of dry etching and wet etching It is a slit (gap).
  • a specific method of modification by high intensity light (electric field) there are, for example, processing by a nanosecond laser and processing by an ultrashort pulse laser.
  • the plurality of different refractive index regions 104B-1b and 104B-2b may be holes filled with argon, nitrogen, air, or the like.
  • N-type impurities are added to the common substrate layer 101B and the first cladding layer 102B.
  • a P-type impurity is added to the second cladding layer 106B and the contact layer 107B.
  • the energy band gap between the first cladding layer 102B and the second cladding layer 106B is larger than the energy band gap between the upper light guide layer 105Bb and the lower light guide layer 105Ba.
  • the energy band gap of the upper light guide layer 105Bb and the lower light guide layer 105Ba is set to be larger than the energy band gap of the multiple quantum well structure MQW of the active layer 103B.
  • the separation regions 112, 212, 312, and 112B are provided.
  • crosstalk does not become a problem. May have no separation region.
  • FIGS. 4 and 5 show examples in which the different refractive index region is circular (perfect circle), the different refractive index region may have a shape other than circular.
  • the shape of the plurality of different refractive index regions on the XY plane is any one of a perfect circle, a square, a regular hexagon, a regular octagon, a regular hexagon, a rectangle, and an ellipse, that is, each different refractive index.
  • the shape of the region is mirror image symmetric (line symmetric)
  • the center of gravity of each corresponding different refractive index region from the lattice point O of each of the plurality of unit constituting regions R constituting the virtual square lattice in the phase modulation layer is mirror image symmetric (line symmetric).
  • an angle ⁇ formed by the direction toward G1 and the s-axis parallel to the X-axis can be set with high accuracy.
  • the shapes of the plurality of different refractive index regions on the XY plane are shapes having no rotational symmetry of 180 ° as shown in FIGS. 22 (a) to 22 (j). Also good. Examples of shapes that do not have 180 ° rotational symmetry include the equilateral triangle shown in FIG. 22B, the right isosceles triangle shown in FIG. 22A, and the shape shown in FIG. 22C. An isosceles triangle, two circles or a part of an ellipse overlap, the shape shown in FIG. 22 (i), the egg shape shown in FIG. 22 (h), and the teardrop shape shown in FIG.
  • FIG. 22 (j) The shape shown in is included. In this case, higher light output can be obtained.
  • the egg-shaped shape is such that the dimension in the minor axis direction near one end along the major axis is the dimension in the minor axis direction near the other end. It is a shape obtained by deforming an ellipse so as to be smaller than that.
  • the teardrop shape is obtained by deforming one end of an ellipse along the major axis into a sharp end projecting along the major axis. It is.
  • the arrow shape is a shape in which one side of the rectangle forms a triangular cutout, and the side opposite to the one side forms a triangular projection.
  • the semiconductor light emitting device outputs light from the first surface.
  • the second surface side electrode is replaced with an electrode having an opening or a transparent
  • a semiconductor light emitting element that outputs light from the second surface side may be used.
  • the number of the phase modulation region, the second surface side electrode, and the first surface side electrode is two (a pair), respectively. One or more may be arranged in one or two dimensions.
  • An outer region B that surrounds the outer periphery may be provided.
  • the inner region A is substantially a region constituted by unit constitution regions R in which corresponding different refractive index regions are arranged.
  • the outer region B is provided with a plurality of peripheral lattice point different refractive index regions, and the center of gravity of the plurality of peripheral lattice point different refractive index regions is, for example, the virtual square on the outer periphery of a virtual square lattice.
  • FIG. 23 shows a modification of the phase modulation layer as viewed along the layer thickness direction (Z-axis direction).
  • the outer contour represents a part of the phase modulation region.
  • the inner region A surrounded by the outer region B is a phase modulation region (substantially the same as in the first to fourth embodiments) including a beam projection region and a plurality of different refractive index regions for generating a beam projection pattern.
  • the phase modulation region of the phase modulation layer is configured by an inner region A and an outer region B.
  • the outer region B is a region including a plurality of peripheral lattice point different refractive index regions having centroids at lattice point positions in a virtual square lattice.
  • the lattice constant of the virtual square lattice in the outer region B is equal to the lattice constant of the virtual square lattice in the inner region A
  • the shape and size of each peripheral lattice point different refractive index region in the outer region B It may be equal to the shape and size of the different refractive index region in the region A. According to this modification, light leakage in the in-plane direction is suppressed, and the oscillation threshold current can be reduced.
  • displaced different refractive index region having a center of gravity G1 at a position shifted by a predetermined distance from each lattice point in the virtual square lattice in the basic region.
  • the displacement different refractive index region may be divided into a plurality of portions so that the entire center of gravity is located at a position shifted from the respective lattice points by a predetermined distance.
  • a lattice point different refractive index region may be provided on each lattice point.
  • the lattice point different refractive index region is a region having a refractive index different from the refractive index of the basic region (first refractive index) in the same manner as the displacement different refractive index region. Material), or part of it may overlap with part of the displacement refractive index region.
  • FIG. 24 is a diagram for explaining the positional relationship between the center of gravity of the displacement different refractive index region and the lattice point different refractive index region when a lattice point different refractive index region is provided in addition to the displacement different refractive index region.
  • FIG. 25 is a diagram showing an example (rotation method) of a combination of a displacement different refractive index region and a lattice point refractive index region when a lattice point different refractive index region is provided in addition to the displacement different refractive index region.
  • FIG. 26 is a diagram showing a modification (rotation method) in the case where a lattice point different refractive index region is provided in addition to the displacement different refractive index region.
  • O represents a lattice point
  • G1 represents the center of gravity of the displacement refractive index region
  • G2 represents the center of gravity of the lattice point different refractive index region.
  • the positional relationship between the center of gravity G1 of the displacement refractive index region n04-mb and the lattice point O is the same as that in FIG. 5, but in FIG. n04-mc is provided.
  • the center of gravity G2 of the lattice point different refractive index region n04-mc overlaps with the lattice point O, but the center of gravity G2 does not necessarily have to be above the lattice point O as shown in FIG. .
  • the displacement different refractive index region n04-mb and the lattice point different refractive index region n04-mc are both circular and do not overlap each other, but the combination of both is not limited to this.
  • FIG. 25A is a combination of FIG. FIG. 25 (b) shows a combination of squares of the displacement different refractive index region n04-mb and the lattice point different refractive index region n04-mc.
  • FIG. 25C shows a combination in which the displacement different refractive index region n04-mb and the lattice point different refractive index region n04-mc are both circular, but a part of both overlaps each other.
  • FIG. 25A is a combination of FIG. FIG. 25 (b) shows a combination of squares of the displacement different refractive index region n04-mb and the lattice point different refractive index region n04-mc.
  • FIG. 25C shows a combination in which the displacement different refractive index region n04-mb and the lattice point different refractive index region n04-mc are both circular, but a part of both overlaps each other.
  • FIG. 25 (d) shows a combination in which the displacement different refractive index region n04-mb and the lattice point different refractive index region n04-mc are both square and a part of both overlaps.
  • FIG. 25 (e) arbitrarily rotates the displacement different refractive index region n04-mb and the lattice point different refractive index region n04-mc of FIG. 25 (d) around the center of gravity G1, G2 (lattice point O). The combination is such that they do not overlap each other.
  • the displacement different refractive index region n04-mb is a triangle and the lattice point different refractive index region n04-mc is a combination of squares.
  • FIG. 25 (g) arbitrarily rotates the displacement different refractive index region n04-mb and the lattice point different refractive index region n04-mc of FIG. 25 (f) around the respective centroids G1 and G2 (lattice points O). The combination is such that they do not overlap each other.
  • FIG. 25H shows a combination in which the displacement different refractive index region n04-mb of FIG. 25A is divided into two circular regions.
  • FIG. 25 (i) shows a combination in which the displacement different refractive index region n04-mb is divided into a square and a triangle, and the lattice point different refractive index region n04-mc is a triangle.
  • the entire different refractive index region including both of them does not have a rotational symmetry of 180 °, so that a higher light output can be obtained. Can do.
  • the shape of the different refractive index region (including the peripheral grating point different refractive index region and the grating point different refractive index region) is a shape having a straight side
  • the direction of the side is set to the common substrate layer. It is desirable to align with a specific plane orientation of the crystal to be formed. This makes it easy to control the shape of the holes when the refractive index region is filled with argon, nitrogen, air, or the like, and suppresses defects in the crystal layer that grows on the holes. can do.
  • the shape and number of the different refractive index regions (including the peripheral grating point different refractive index region and the grating point different refractive index region) provided corresponding to each lattice point are not necessarily the same in one phase modulation region. There is no need. As shown in FIG. 27 (second modification of the phase modulation layer n04-m shown in FIG. 4), the shape and number of different refractive index regions may be different for each lattice point.
  • the arrangement pattern of the different refractive index regions n04-mb in the phase modulation layer n04-m is determined by the on-axis shift method. Even when the axial shift method is applied in place of the rotation method described above as the method for determining the arrangement pattern of the different refractive index regions n04-mb in the phase modulation layer n04-m, the obtained phase modulation layer is the same as that described above.
  • the present invention is applied to the semiconductor light emitting module according to various embodiments.
  • FIG. 28 is a schematic diagram for explaining the arrangement pattern (on-axis shift method) of the different refractive index regions n04-mb in the phase modulation layer n04-m.
  • the phase modulation layer n04-m includes a basic region n04-ma having a first refractive index and a different refractive index region n04-mb having a second refractive index different from the first refractive index.
  • a virtual square lattice defined on the XY plane is set in the phase modulation layer n04-m, as in the example of FIG.
  • One side of the square lattice is parallel to the X axis, and the other side is parallel to the Y axis.
  • the square unit constituting region R centering on the lattice point O of the square lattice extends over a plurality of columns (x1 to x4) along the X axis and a plurality of rows (y1 to y3) along the Y axis. Set in two dimensions. If the coordinates of each unit configuration region R are given by the centroid position of each unit configuration region R, the centroid position coincides with the lattice point O of a virtual square lattice.
  • a plurality of different refractive index regions n04-mb is provided in each unit constituting region R.
  • the planar shape of the different refractive index region n04-mb is, for example, a circular shape.
  • the lattice point O may be located outside the different refractive index region n04-mb, or may be included inside the different refractive index region n04-mb.
  • the ratio of the area S of the different refractive index regions n04-mb occupying in one unit constituent region R is called a filling factor (FF).
  • FF filling factor
  • S is the area of the different refractive index region n04-mb in the XY plane.
  • S ⁇ (D / 2 ) Given as 2 .
  • FIG. 29 illustrates, as an example of an arrangement pattern determined by the axis shift method, the positional relationship between the center of gravity G1 of the different refractive index region n04-mb and the lattice point O (x, y) in the virtual square lattice.
  • FIG. 29 As shown in FIG. 29, the center of gravity G1 of each different refractive index region n04-mb is arranged on a straight line L.
  • the straight line L is a straight line that passes through the corresponding lattice point O (x, y) of the unit configuration region R (x, y) and is inclined with respect to each side of the square lattice.
  • the straight line L is a straight line that is inclined with respect to both the s axis and the t axis that define the unit configuration region R (x, y).
  • the inclination angle of the straight line L with respect to the s-axis is ⁇ .
  • the inclination angle ⁇ is constant in the phase modulation layer n04-m.
  • the straight line L extends from the first quadrant to the third quadrant of the coordinate plane defined by the s axis and the t axis. .
  • the straight line L extends from the second quadrant to the fourth quadrant of the coordinate plane defined by the s axis and the t axis.
  • the inclination angle ⁇ is an angle excluding 0 °, 90 °, 180 °, and 270 °.
  • the distance between the lattice point O (x, y) and the center of gravity G1 is r (x, y).
  • x represents the position of the xth lattice point on the X axis
  • y represents the position of the yth lattice point on the Y axis.
  • the center of gravity G1 is located in the first quadrant (or the second quadrant).
  • the center of gravity G1 is located in the third quadrant (or the fourth quadrant).
  • the lattice point O and the center of gravity G1 coincide with each other.
  • Each of the different refractive index regions n04-mb is individually set according to the target beam projection pattern (light image).
  • the distribution of the distance r (x, y) has a specific value for each position determined by the values of x (x1 to x4 in the example of FIG. 28) and y (y1 to y3 in the example of FIG.
  • the distribution of the distance r (x, y) is determined from the phase amplitude extracted from the complex amplitude distribution obtained by inverse Fourier transform of the target beam projection pattern. That is, when the phase P (x, y) in the unit configuration region R (x, y) shown in FIG. 29 is P 0 , the distance r (x, y) is set to 0, and the phase P ( The distance r (x, y) is set to the maximum value R 0 when x, y) is ⁇ + P 0 , and the distance r (x, y) when the phase P (x, y) is ⁇ + P 0. ) Is set to the minimum value -R 0 .
  • the initial phase P 0 can be set arbitrarily.
  • the maximum value R 0 of r (x, y) is, for example, in the range of the following formula (10).
  • the reproducibility of the beam projection pattern is applied by applying an iterative algorithm such as the Gerchberg-Saxton (GS) method that is generally used when calculating the hologram generation. Will improve.
  • FIG. 30 is a plan view showing an example in which a refractive index substantially periodic structure is applied only in a specific region of the phase modulation layer as a first modification of the phase modulation layer in FIG.
  • a substantially periodic structure for example, the structure of FIG. 28 for emitting a target beam projection pattern inside the square inner region RIN.
  • a true circular different refractive index region having a centroid position coincident with a lattice point position of a square lattice is arranged.
  • window function noise high-frequency noise
  • light leakage in the in-plane direction can be suppressed, and a reduction in threshold current can be expected.
  • phase modulation layer n04-m is configured to satisfy the following conditions under the three preconditions and the fourth precondition defined by the above formulas (6) and (7).
  • the corresponding different refractive index region n04-mb is arranged in the unit configuration region R (x, y) so as to satisfy the following relationship.
  • the distance r (x, y) is set to 0 when the phase P (x, y) in the unit configuration region R (x, y) is P 0 , and the phase P (x, y) is ⁇ + P. When it is 0, it is set to the maximum value R 0 , and when the phase P (x, y) is ⁇ + P 0, it is set to the minimum value ⁇ R 0 .
  • the target beam projection pattern is subjected to inverse Fourier transform, and the distribution of the distance r (x, y) according to the phase P (x, y) of the complex amplitude is obtained. It may be given to the rate region n04-mb.
  • the phase P (x, y) and the distance r (x, y) may be proportional to each other.
  • the far-field image after Fourier transformation of the laser beam has various shapes such as single or multiple spot shapes, circular shapes, linear shapes, character shapes, double annular shapes, or Laguerre Gaussian beam shapes. Can take. Since the beam direction can also be controlled, for example, a laser that performs high-speed scanning electrically by arraying each of a plurality of semiconductor light-emitting elements in the semiconductor light-emitting modules according to the various embodiments described above one-dimensionally or two-dimensionally. A processing machine can be realized. Since the beam projection pattern is represented by angle information in the far field, in the case of a bitmap image or the like where the target beam projection pattern is represented by two-dimensional position information, it is once converted into angle information. Then, it is preferable to perform inverse Fourier transform after conversion to wave number space.
  • the intensity distribution I (x, y) is calculated by using the abs function of the numerical analysis software “MATLAB” of MathWorks.
  • the phase distribution P (x, y) can be calculated by using an angle function of MATLAB.
  • FIG. 31 is a diagram for explaining points to consider when determining the arrangement of the different refractive index regions by obtaining the phase angle distribution (corresponding to the rotation angle distribution in the rotation method) from the inverse Fourier transform result of the target beam projection pattern. .
  • the beam projection pattern calculated from the complex amplitude distribution obtained by the inverse Fourier transform of FIG. 31A, which is the target beam projection pattern, is in the state shown in FIG.
  • the first quadrant of the beam projection pattern in FIG. A superimposed pattern in which the pattern rotated by 180 degrees in the first quadrant of (a) and the pattern of the third quadrant of FIG.
  • the second quadrant of FIG. 31B a superposed pattern in which the pattern rotated 180 degrees in the second quadrant of FIG. 31A and the pattern of the fourth quadrant of FIG.
  • the third quadrant of FIG. 31B a superposed pattern in which the pattern rotated 180 degrees in the third quadrant of FIG. 31A and the pattern of the first quadrant of FIG.
  • the first quadrant of the original optical image is added to the third quadrant of the obtained beam projection pattern.
  • a pattern obtained by rotating the first quadrant of the original optical image by 180 degrees appears in the first quadrant of the obtained beam projection pattern.
  • the material system, the film thickness, and the layer configuration can be variously changed as long as the configuration includes the active layer and the phase modulation layer.
  • the scaling law holds for a so-called square lattice photonic crystal laser in which the perturbation from the virtual square lattice is zero. That is, when the wavelength becomes a constant ⁇ times, a similar standing wave state can be obtained by multiplying the entire square lattice structure by ⁇ times.
  • the structure of the phase modulation layer n04-m can be determined by a scaling rule corresponding to the wavelength. Therefore, it is also possible to realize a semiconductor light emitting device that outputs visible light by using the active layer 12 that emits light of blue, green, red, and the like, and applying a scaling rule according to the wavelength.
  • a resonance mode (standing wave in the XY plane) in which the grating interval a is equal to the wavelength ⁇ is obtained.
  • oscillation in such a resonance mode (standing wave state) is obtained.
  • the standing wave state having the same lattice spacing and wavelength has four modes due to the symmetry of the square lattice.
  • a desired beam projection pattern can be obtained in the same manner even when oscillating in any of the four standing wave states.
  • the standing wave in the phase modulation layer n04-m is scattered by the hole shape, and the wavefront obtained in the direction perpendicular to the plane is phase-modulated, whereby a desired beam projection pattern is obtained. Therefore, a desired beam projection pattern can be obtained without a polarizing plate.
  • This beam projection pattern is not only a pair of unimodal beams (spots), but as described above, the character shape, two or more identically shaped spot groups, or the phase and intensity distribution are spatially non-uniform. It is also possible to use a vector beam or the like.
  • the refractive index of the basic region n04-ma is preferably 3.0 to 3.5, and the refractive index of the different refractive index region n04-mb is preferably 1.0 to 3.4.
  • the average radius of each of the different refractive index regions n04-mb in the hole of the basic region n04-ma is, for example, 20 nm to 120 nm in the case of the 940 nm band. As the size of each of the different refractive index regions n04-mb changes, the diffraction intensity in the Z-axis direction changes.
  • This diffraction efficiency is proportional to the optical coupling coefficient ⁇ 1 represented by a first-order coefficient when the shape of the different refractive index region n04-mb is Fourier transformed.
  • the optical coupling coefficient is described in Non-Patent Document 2, for example.
  • the semiconductor light emitting device including the phase modulation layer n04-m in which the arrangement pattern of the different refractive index regions n04-mb is determined by the on-axis shift method as described above will be described.
  • the center of gravity G1 of each of the different refractive index regions n04-mb is arranged away from the corresponding lattice point O of the virtual square lattice, and around the lattice points O according to the optical image.
  • Those having a different rotation angle are known (see, for example, Patent Document 1).
  • the phase modulation layer n04-m optically coupled to the active layer has a basic region n04-ma and a plurality of different refractive index regions n04-mb having a refractive index different from that of the basic region n04-ma.
  • the center of gravity G1 of the refractive index region n04-mb is disposed.
  • the distance r (x, y) between the center G1 of each of the different refractive index regions n04-mb and the corresponding lattice point O is individually set according to the target beam projection pattern.
  • the beam phase changes according to the distance between the lattice point O and the center of gravity G1. That is, the phase of the beam emitted from each of the different refractive index regions n04-mb can be controlled only by changing the position of the center of gravity G1, and the beam projection pattern formed as a whole can have a desired shape (target beam projection). Pattern).
  • each of the semiconductor light emitting elements described above is an S-iPM laser, and according to such a structure, the center of gravity G1 of each of the different refractive index regions n04-mb rotates around each lattice point O according to the target beam projection pattern.
  • a beam projection pattern having an arbitrary shape can be output in a direction inclined with respect to a direction perpendicular to the first surface where anger is output.
  • the on-axis shift method can provide a semiconductor light emitting device and a semiconductor light emitting module in which the positional relationship between the gravity center G1 of each different refractive index region n04-mb and each lattice point O is completely different from the conventional one.
  • FIG. 32A is a diagram showing an example of a beam projection pattern (light image) output from the semiconductor light emitting element.
  • the center of FIG. 32A corresponds to an axis that intersects the light emitting surface of the semiconductor light emitting element and is perpendicular to the light emitting surface.
  • FIG. 32B is a graph showing a light intensity distribution in a cross section including an axis that intersects the light emitting surface of the semiconductor light emitting element and is perpendicular to the light emitting surface.
  • FIG. 32B is a graph showing a light intensity distribution in a cross section including an axis that intersects the light emitting surface of the semiconductor light emitting element and is perpendicular to the light emitting surface.
  • FIG. 32B is a far-field image 1344 acquired using an FFP optical system (A3267-12 manufactured by Hamamatsu Photonics), a camera (ORCA-05G manufactured by Hamamatsu Photonics), and a beam profiler (Lepas-12 manufactured by Hamamatsu Photonics).
  • the counts in the vertical direction of dot ⁇ 1024 dot image data are integrated and plotted. Note that the maximum count number in FIG. 32A is normalized by 255, and the center zero-order light B0 is saturated in order to clearly indicate the intensity ratio of ⁇ first-order light. From FIG. 32 (b), the difference in intensity between the primary light and the negative primary light can be easily understood.
  • FIG. 33A is a diagram showing a phase distribution corresponding to the beam projection pattern shown in FIG. FIG.
  • 33 (b) is a partially enlarged view of FIG. 33 (a).
  • 33 (a) and 33 (b) the phase at each location in the phase modulation layer n04-m is shown by shading, with the dark portion having a phase angle of 0 ° and the bright portion having a phase angle of 360 °. Get closer.
  • the center value of the phase angle can be set arbitrarily, it is not always necessary to set the phase angle within the range of 0 ° to 360 °. As shown in FIG. 32A and FIG.
  • the semiconductor light emitting element includes primary light including a first light image portion B1 output in a first direction inclined with respect to the axis, The first-order light is output in a second direction that is symmetric with respect to the first direction with respect to the axis, and includes the first light image portion B1 and the second light image portion B2 that is rotationally symmetric with respect to the axis.
  • the first light image portion B1 appears in the first quadrant in the XY plane
  • the second light image portion B2 appears in the third quadrant in the XY plane.
  • only the primary light is used and the ⁇ 1st order light is not used. In such a case, it is desirable that the light amount of the ⁇ 1st order light be suppressed to be smaller than that of the primary light.
  • FIG. 34 is a diagram conceptually showing an example of a beam projection pattern of traveling waves in each direction.
  • the inclination angle of the straight line L with respect to the s-axis and the t-axis is 45 °.
  • basic traveling waves AU, AD, AR, and AL are generated along the XY plane.
  • Traveling waves AU and AD are light traveling along the side extending in the Y-axis direction among the sides of the square lattice.
  • the traveling wave AU travels in the Y-axis positive direction
  • the traveling wave AD travels in the Y-axis negative direction.
  • the traveling waves AR and AL are light traveling along the sides extending in the X-axis direction among the sides of the square lattice.
  • the traveling wave AR travels in the positive direction of the X axis
  • the traveling wave AL travels in the negative direction of the X axis.
  • beam projection patterns in opposite directions are obtained from traveling waves traveling in opposite directions.
  • a beam projection pattern BU including only the second light image portion B2 is obtained from the traveling wave AU
  • a beam projection pattern BD including only the first light image portion B1 is obtained from the traveling wave AD.
  • a beam projection pattern BR including only the second light image portion B2 is obtained from the traveling wave AR
  • a beam projection pattern BL including only the first light image portion B1 is obtained from the traveling wave AL.
  • the beam projection pattern output from the semiconductor light emitting element is an overlap of these beam projection patterns BU, BD, BR, and BL.
  • both traveling waves traveling in opposite directions are caused by the nature of the arrangement of the different refractive index region.
  • the same amount of the first-order light and the ⁇ 1st-order light appears in any of the four traveling waves AU, AD, AR, and AL forming the standing wave, and the radius of the rotating circle ( Depending on the distance between the center of gravity of the different refractive index region and the lattice point, zero-order light is generated.
  • FIG. 35 as a method for determining the arrangement pattern of the above-described different refractive index regions n04-mb, a rotation method in which the different refractive index regions are rotated around lattice points, and traveling waves AU, AD, AR, and AL are shown.
  • FIG. 35 The reason why it is difficult to selectively reduce either the first-order light or the ⁇ 1st-order light in the rotation method in which the different refractive index region n04-mb is rotated around the lattice point O will be described.
  • a traveling wave AU having a positive direction of the t-axis shown in FIG. 35B is considered.
  • the phase distribution ⁇ (x, y) can be series-expanded, and the zero-order light And each light quantity of ⁇ primary light can be explained.
  • the zero-order light component of the phase distribution ⁇ (x, y) is J 0 (2 ⁇ r / a)
  • the first-order light component is J 1 (2 ⁇ r / a)
  • the ⁇ 1st- order light component is J ⁇ 1 (2 ⁇ r / a). a).
  • the Y-axis positive traveling wave AU is considered as an example of the four traveling waves, but the same relationship holds for the other three waves (traveling waves AD, AR, AL), and ⁇ 1st order light
  • the component sizes are equal. From the above discussion, in the conventional method in which the different refractive index region n04-mb is rotated around the lattice point O, it is theoretically difficult to give a difference in the light amount of the ⁇ first-order light component.
  • the phase modulation layer n04-m in which the arrangement pattern of the different refractive index regions n04-mb is determined by the axial shift method the primary light and the ⁇ 1st order are obtained for a single traveling wave.
  • the shift amount R 0 becomes closer to the upper limit value of the above-described equation (9), so that the ideal Phase distribution can be obtained.
  • the zero-order light is reduced, and one of the first-order light and the ⁇ 1st-order light is selectively reduced in each of the traveling waves AU, AD, AR, and AL. Therefore, in principle, it is possible to give a difference between the light amounts of the primary light and the ⁇ 1st order light by selectively reducing one of the traveling waves traveling in opposite directions.
  • FIG. 36 shows a method of determining the arrangement pattern of the different refractive index regions n04-mb, an axial shift method in which the different refractive index regions are moved on an axis that passes through the lattice points and is inclined with respect to the square lattice, and a traveling wave AU, It is a figure which shows AD, AR, and AL.
  • the center of gravity G1 of the different refractive index region n04-mb moves on a straight line L passing through the lattice point O and inclined with respect to both the s-axis and the t-axis defining the unit constituent region R, as shown in FIG.
  • FIG. 36B shows an example of four traveling waves with respect to the design phase ⁇ (x, y) (corresponding to the rotation angle in FIG. 5 in the rotation method) in the unit configuration region R (x, y).
  • the deviation from the lattice point O is r ⁇ sin ⁇ ⁇ ⁇ (x, y) ⁇ 0 ⁇ / ⁇ for the traveling wave AU, and the phase difference is ( 2 ⁇ / a) r ⁇ sin ⁇ ⁇ ⁇ (x, y) ⁇ 0 ⁇ / ⁇ .
  • the phase distribution ⁇ (x, y) (corresponding to the above-described phase distribution P (x, y)) relating to the traveling wave AU is negligibly affected by the size of the different refractive index region n04-mb.
  • the magnitude of the 0th-order light component of the phase distribution ⁇ (x, y) is It is represented by the following formula (15).
  • size of the primary light component of phase distribution (PHI) (x, y) is represented by the following formula
  • the magnitude of the ⁇ 1st order light component of the phase distribution ⁇ (x, y) is expressed by the following equation (17). In the above formulas (15) to (17), the 0th-order light component and the ⁇ 1st-order light component appear in addition to the primary light component except when the condition defined by the following formula (18) is satisfied. However, the magnitudes of the ⁇ first-order light components are not equal to each other.
  • the traveling wave AU in the Y-axis positive direction is considered as an example of the four traveling waves, but the same relationship holds for the other three waves (traveling waves AD, AR, AL), and ⁇ 1 A difference occurs in the magnitude of the secondary light component.
  • the axial shift method in which the different refractive index region n04-mb moves on the straight line L that passes through the lattice point O and is inclined from the square lattice, it is possible to give a difference in the light amount of the ⁇ first-order light components. It is possible in principle.
  • first light image portion B1 or second light image portion B2 it is possible to selectively extract only a desired light image (first light image portion B1 or second light image portion B2) by reducing ⁇ 1st order light or primary light. Also in FIG. 32B described above, it can be seen that there is a difference in intensity between the primary light and the ⁇ 1st order light.
  • the inclination angle ⁇ of the straight line L in the unit constituent region R may be constant in the phase modulation layer n04-m.
  • the design of the arrangement of the center of gravity G1 of the different refractive index region n04-mb can be easily performed.
  • the inclination angle may be 45 °, 135 °, 225 °, or 315 °.
  • the inclination angle ⁇ is 0 °, 90 °, 180 °, or 270 °, of the four traveling waves AU, AD, AR, and AL, a pair of progressions proceeding in the Y-axis direction or the X-axis direction. Since the waves do not contribute to the primary light (signal light), it is difficult to increase the efficiency of the signal light.
  • the shape of the different refractive index region n04-mb on the XY plane is circular.
  • the different refractive index region n04-mb may have a shape other than a circle.
  • the shape of the different refractive index region n04-mb may have mirror image symmetry (line symmetry).
  • mirror image symmetry refers to the planar shape of the different refractive index region n04-mb located on one side of the straight line across a certain straight line along the XY plane, and the straight line.
  • planar shape of the different refractive index region n04-mb located on the other side of each other can be mirror-image symmetric (line symmetric).
  • line symmetry for example, a perfect circle shown in FIG. 37A, a square shown in FIG. 37B, a regular hexagon shown in FIG. 37C, The regular octagon shown in FIG. 37 (d), the regular hexagon shown in FIG. 37 (e), the rectangle shown in FIG. 37 (f), the ellipse shown in FIG. 37 (g), etc. Can be mentioned.
  • each of the unit structure regions R of the virtual square lattice of the phase modulation layer n04-m Since the shape is simple, the direction and position of the center of gravity G1 of the corresponding refractive index region n04-mb from the lattice point O can be determined with high accuracy. That is, patterning with high accuracy is possible.
  • the shape of the different refractive index region n04-mb on the XY plane may be a shape having no rotational symmetry of 180 °.
  • Such shapes include, for example, an equilateral triangle shown in FIG. 38 (a), a right isosceles triangle shown in FIG. 38 (b), and a portion of two circles or ellipses shown in FIG. 38 (c).
  • An oval shape shown in FIG. 38 (d) a teardrop shape shown in FIG. 38 (e), an isosceles triangle shown in FIG. 38 (f), and FIG. 38 (g).
  • FIG. Examples include a shape in which a part of two rectangles shown in 38 (k) overlap with each other and has no mirror image symmetry.
  • the oval shape is a shape deformed so that the dimension in the short axis direction near one end along the major axis of the ellipse is smaller than the dimension in the short axis direction near the other end.
  • the teardrop shape is a shape in which one end portion along the major axis of the ellipse is deformed into a sharp end projecting along the major axis direction.
  • the arrow-shaped shape is a shape in which one side of a rectangle is recessed in a triangular shape, and the opposite side is pointed in a triangular shape.
  • the different refractive index region n04-mb may be composed of a plurality of elements as shown in FIGS. 38 (j) and 38 (k).
  • the center of gravity of the different refractive index region n04-m G1 is a composite centroid of a plurality of components.
  • FIG. 39 is a diagram showing still another example (on-axis shift method) of the planar shape of the different refractive index region.
  • FIG. 40 is a diagram illustrating a second modification of the phase modulation layer of FIG.
  • each of the different refractive index regions n04-mb includes a plurality of components 15b and 15c.
  • the centroid G1 is a combined centroid of all the components and is located on the straight line L.
  • Both the components 15b and 15c have a second refractive index different from the first refractive index of the basic region n04-ma.
  • Both of the components 15b and 15c may be holes, or may be configured by embedding a compound semiconductor in the holes.
  • the component 15c is provided in one-to-one correspondence with the component 15b.
  • the center of gravity G1 obtained by combining the constituent elements 15b and 15c is located on a straight line L that crosses the lattice point O of the unit constituent region R that constitutes a virtual square lattice. Note that any of the constituent elements 15b and 15c is included within the range of the unit constituent region R that forms a virtual square lattice.
  • the unit configuration area R is an area surrounded by a straight line that bisects the lattice points of a virtual square lattice.
  • the planar shape of the component 15c is, for example, a circle, but can have various shapes as in the various examples shown in FIGS. 39 (a) to 39 (k) show examples of the shapes and relative relationships of the components 15b and 15c on the XY plane.
  • FIG. 39A and FIG. 39B show a form in which both the components 15b and 15c have the same shape.
  • FIG. 39 (c) and FIG. 39 (d) show a form in which both of the components 15b and 15c have the same shape and a part of each other overlaps.
  • FIG. 39 (e) shows a form in which both the constituent elements 15b and 15c have the same shape, and the distance between the centroids of the constituent elements 15b and 15c is arbitrarily set for each lattice point.
  • FIG. 39A and FIG. 39B show a form in which both the components 15b and 15c have the same shape.
  • FIG. 39 (c) and FIG. 39 (d) show a form in which both of the components 15b and
  • FIG. 39 (f) shows a form in which the components 15b and 15c have figures with different shapes.
  • FIG. 39 (g) shows a form in which the constituent elements 15b and 15c have different shapes and the distance between the centroids of the constituent elements 15b and 15c is arbitrarily set for each lattice point.
  • the component 15b constituting a part of the different refractive index region n04-mb is composed of two regions 15b1 and 15b2 spaced apart from each other. May be.
  • the distance between the center of gravity of the regions 15b1 and 15b2 (corresponding to the center of gravity of the single component 15b) and the center of gravity of the component 15c may be arbitrarily set for each lattice point.
  • the regions 15b1 and 15b2 and the component 15c may have figures having the same shape.
  • two graphics in the regions 15b1 and 15b2 and the component 15c may be different from the others.
  • the angle with respect to the s axis of the straight line connecting the regions 15b1 and 15b2 may be arbitrarily set for each lattice point. Good.
  • the angle of the straight line connecting the regions 15b1 and 15b2 with respect to the s-axis is arbitrary for each lattice point while the regions 15b1 and 15b2 and the component 15c maintain the same relative angle. May be set.
  • planar shape of the different refractive index regions n04-mb may be the same between the unit constituent regions R. That is, even if the different refractive index regions n04-mb have the same figure in all the unit configuration regions R, they can be overlapped with each other between the lattice points by translation operation or translation operation and rotation operation. Good. In that case, generation of noise light and zero-order light as noise in the beam projection pattern can be suppressed.
  • the planar shape of the different refractive index regions n04-mb does not necessarily have to be the same between the unit constituent regions R. For example, as shown in FIG. 40, the shapes of the adjacent unit constituent regions R are different from each other. May be. As shown in the examples of FIGS. 36A and 36B, the center of the straight line L passing through each lattice point O matches the lattice point O in any case of FIGS. Is preferably set.
  • the phase modulation layer in which the arrangement pattern of the different refractive index region is determined by the rotation method is applied even if the arrangement pattern of the different refractive index region is determined by the on-axis shift method.
  • the same effects as those of the embodiment described above can be suitably achieved.
  • second cladding layer 108-m, 208-m, 308-m, 108B-m ... second surface side Electrode, 110, 210, 310, 110B-m ... first surface side electrode, 112, 212, 312, 112B ... separation region.

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Abstract

Des modes de réalisation de la présente invention concernent un élément électroluminescent à semi-conducteur unique qui a une pluralité d'unités électroluminescentes chacune capable de générer de la lumière d'un motif de projection de faisceau désiré, et un procédé de fabrication de l'élément électroluminescent à semi-conducteur. Cet élément électroluminescent à semi-conducteur comprend une couche active et une couche de modulation de phase formée sur une couche de substrat commune, et au moins la couche de modulation de phase comprend une pluralité de régions de modulation de phase disposées le long de la couche de substrat commune. Les régions de modulation de phase sont obtenues par agencement séparé au niveau d'une pluralité de parties dans la couche de modulation de phase après la production de la couche de modulation de phase. Ainsi, l'invention concerne un élément électroluminescent à semi-conducteur ayant des unités électroluminescentes qui sont positionnées avec précision par l'intermédiaire d'un processus de production plus simple que la technologie classique.
PCT/JP2018/012188 2017-03-27 2018-03-26 Élément électroluminescent à semi-conducteur et procédé de fabrication d'élément électroluminescent à semi-conducteur WO2018181202A1 (fr)

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CN201880016044.XA CN110383610A (zh) 2017-03-27 2018-03-26 半导体发光元件及其制造方法
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US16/433,127 US11646546B2 (en) 2017-03-27 2019-06-06 Semiconductor light emitting array with phase modulation regions for generating beam projection patterns
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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019106397A (ja) * 2017-12-08 2019-06-27 浜松ホトニクス株式会社 発光装置
JP2021082730A (ja) * 2019-11-20 2021-05-27 浜松ホトニクス株式会社 半導体発光素子
JP2021093517A (ja) * 2019-11-29 2021-06-17 セイコーエプソン株式会社 発光装置およびプロジェクター
JPWO2022181723A1 (fr) * 2021-02-25 2022-09-01
WO2023171629A1 (fr) * 2022-03-09 2023-09-14 浜松ホトニクス株式会社 Élément électroluminescent à semi-conducteur
WO2023171450A1 (fr) * 2022-03-09 2023-09-14 浜松ホトニクス株式会社 Procédé de conception de distribution de phase, dispositif de conception de distribution de phase, programme de conception de distribution de phase et support d'enregistrement
WO2024053314A1 (fr) * 2022-09-05 2024-03-14 浜松ホトニクス株式会社 Dispositif électroluminescent à semi-conducteur
US12181273B2 (en) 2020-02-21 2024-12-31 Hamamatsu Photonics K.K. Three-dimensional measurement device
JP2025027928A (ja) * 2023-08-17 2025-02-28 ツー－シックス デラウェア インコーポレイテッド 薄膜リチウム化合物導波路を有する半導体レーザアセンブリ

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118073962B (zh) * 2024-02-27 2025-03-14 中国科学院长春光学精密机械与物理研究所 一种二维光子晶体面发射激光器

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09139540A (ja) * 1995-11-14 1997-05-27 Nec Corp 面発光素子およびその製造方法
JP2009212359A (ja) * 2008-03-05 2009-09-17 Canon Inc 面発光レーザアレイ
JP2012195341A (ja) * 2011-03-15 2012-10-11 Ricoh Co Ltd 面発光型レーザ素子とその製造方法、面発光型レーザアレイ素子、光走査装置、ならびに画像形成装置
US20130163626A1 (en) * 2011-12-24 2013-06-27 Princeton Optronics Optical Illuminator
WO2014136962A1 (fr) * 2013-03-07 2014-09-12 浜松ホトニクス株式会社 Élément laser et dispositif laser
WO2014136955A1 (fr) * 2013-03-07 2014-09-12 浜松ホトニクス株式会社 Élément laser et dispositif laser
US20160072258A1 (en) * 2014-09-10 2016-03-10 Princeton Optronics Inc. High Resolution Structured Light Source
WO2016111332A1 (fr) * 2015-01-09 2016-07-14 浜松ホトニクス株式会社 Dispositif laser à semi-conducteur
WO2016148075A1 (fr) * 2015-03-13 2016-09-22 浜松ホトニクス株式会社 Élément électroluminescent semi-conducteur

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09139540A (ja) * 1995-11-14 1997-05-27 Nec Corp 面発光素子およびその製造方法
JP2009212359A (ja) * 2008-03-05 2009-09-17 Canon Inc 面発光レーザアレイ
JP2012195341A (ja) * 2011-03-15 2012-10-11 Ricoh Co Ltd 面発光型レーザ素子とその製造方法、面発光型レーザアレイ素子、光走査装置、ならびに画像形成装置
US20130163626A1 (en) * 2011-12-24 2013-06-27 Princeton Optronics Optical Illuminator
WO2014136962A1 (fr) * 2013-03-07 2014-09-12 浜松ホトニクス株式会社 Élément laser et dispositif laser
WO2014136955A1 (fr) * 2013-03-07 2014-09-12 浜松ホトニクス株式会社 Élément laser et dispositif laser
US20160072258A1 (en) * 2014-09-10 2016-03-10 Princeton Optronics Inc. High Resolution Structured Light Source
WO2016111332A1 (fr) * 2015-01-09 2016-07-14 浜松ホトニクス株式会社 Dispositif laser à semi-conducteur
WO2016148075A1 (fr) * 2015-03-13 2016-09-22 浜松ホトニクス株式会社 Élément électroluminescent semi-conducteur

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
KUROSAKA ET AL.: "Effects of non-lasing band in two-dimensional photonic-crystal lasers clarified using omnidirectional band structure", OPTICS EXPRESS, vol. 20, no. 19, September 2012 (2012-09-01), pages 21773 - 21783, XP055219395 *
KUROSAKA ET AL.: "Phase-modulating lasers toward on-chip integration", SCIENTIFIC REPORTS, vol. 6, 26 July 2016 (2016-07-26), pages 30138, XP055550784 *
LEE: "Sampled Fourier Transform Hologram Generated by Computer", APPLIED OPTICS, vol. 9, no. 3, March 1970 (1970-03-01), pages 639 - 644, XP009093685 *

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019106397A (ja) * 2017-12-08 2019-06-27 浜松ホトニクス株式会社 発光装置
JP2021082730A (ja) * 2019-11-20 2021-05-27 浜松ホトニクス株式会社 半導体発光素子
JP7348039B2 (ja) 2019-11-20 2023-09-20 浜松ホトニクス株式会社 半導体発光素子
JP7596686B2 (ja) 2019-11-29 2024-12-10 セイコーエプソン株式会社 発光装置およびプロジェクター
JP2021093517A (ja) * 2019-11-29 2021-06-17 セイコーエプソン株式会社 発光装置およびプロジェクター
US12181273B2 (en) 2020-02-21 2024-12-31 Hamamatsu Photonics K.K. Three-dimensional measurement device
JPWO2022181723A1 (fr) * 2021-02-25 2022-09-01
WO2022181723A1 (fr) * 2021-02-25 2022-09-01 国立大学法人京都大学 Laser à cristal photonique bidimensionnel
WO2023171450A1 (fr) * 2022-03-09 2023-09-14 浜松ホトニクス株式会社 Procédé de conception de distribution de phase, dispositif de conception de distribution de phase, programme de conception de distribution de phase et support d'enregistrement
WO2023171629A1 (fr) * 2022-03-09 2023-09-14 浜松ホトニクス株式会社 Élément électroluminescent à semi-conducteur
JP2024035975A (ja) * 2022-09-05 2024-03-15 浜松ホトニクス株式会社 半導体発光装置
WO2024053314A1 (fr) * 2022-09-05 2024-03-14 浜松ホトニクス株式会社 Dispositif électroluminescent à semi-conducteur
JP7742336B2 (ja) 2022-09-05 2025-09-19 浜松ホトニクス株式会社 半導体発光装置
JP2025027928A (ja) * 2023-08-17 2025-02-28 ツー－シックス デラウェア インコーポレイテッド 薄膜リチウム化合物導波路を有する半導体レーザアセンブリ
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