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WO2018186542A1 - Matériau de transport de trous et élément photoélectrique le comprenant - Google Patents

Matériau de transport de trous et élément photoélectrique le comprenant Download PDF

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Publication number
WO2018186542A1
WO2018186542A1 PCT/KR2017/009997 KR2017009997W WO2018186542A1 WO 2018186542 A1 WO2018186542 A1 WO 2018186542A1 KR 2017009997 W KR2017009997 W KR 2017009997W WO 2018186542 A1 WO2018186542 A1 WO 2018186542A1
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WIPO (PCT)
Prior art keywords
hole transport
poly
transport material
transport layer
layer
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Application number
PCT/KR2017/009997
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English (en)
Korean (ko)
Inventor
이슬기
이정현
박현수
임종찬
니콜라스제이로빈
와트에이알앤드류
Original Assignee
대주전자재료 주식회사
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Publication of WO2018186542A1 publication Critical patent/WO2018186542A1/fr

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/143—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies comprising quantum structures
    • H10F77/1433—Quantum dots
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/12—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/12—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
    • C08G61/122—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides
    • C08G61/123—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides derived from five-membered heterocyclic compounds
    • C08G61/126—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides derived from five-membered heterocyclic compounds with a five-membered ring containing one sulfur atom in the ring
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/02—Elements
    • C08K3/04—Carbon
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L101/00—Compositions of unspecified macromolecular compounds
    • C08L101/12—Compositions of unspecified macromolecular compounds characterised by physical features, e.g. anisotropy, viscosity or electrical conductivity
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L65/00—Compositions of macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain; Compositions of derivatives of such polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes

Definitions

  • [1] relates to hole transport materials and photoelectric devices comprising them.
  • [2] solar cells are typical for converting them into electrical energy using light energy
  • Solar cells are first generation solar cells containing crystalline and polycrystalline silicon systems, second generation solar cells including organic solar cells, dye-sensitized solar cells, and compound semiconductor thin film solar cells, and third generation solar cells including quantum dots. Can be divided into batteries
  • the quantum dot is characterized by a single material absorbing wavelengths above the bandgap in all areas, and a low bandgap through quantum confinement to a size below the bohr radius.
  • the band gap of the bulk material can be easily controlled.
  • the quantum dots can easily be separated into electrons and holes due to the high dielectric constant, and a single photon generates a large number of excitons.
  • the solution process can be implemented as a low cost process.
  • An embodiment of the present invention provides a photoelectric conversion efficiency (PCE) of a photovoltaic device such as a solar cell.
  • PCE photoelectric conversion efficiency
  • An object is to provide a hole transport material which can be improved and a photoelectric device comprising the same.
  • the photoelectric element including the hole transport material of one embodiment of the present invention can be improved in stability.
  • An embodiment of the present invention provides a hole transport material comprising a non-conductive polymer matrix; and a composite of carbon nano-nouvves and hole transport materials located in the non-conductive polymer matrix.
  • the nonconductive polymer is poly (methyl methacrylate) (poly (methyl methacrylate),
  • PMMA ethylene-vinyl acetate
  • EVA polyvinyl chloride
  • PE polyethylene
  • PC polycarbonate
  • PB polybutylene
  • the hole transport material is P3HT (poly (3-hexylthiophene)
  • Another embodiment of the present invention is a transparent electrode; located on the transparent electrode
  • An electron transport layer a photoactive layer positioned on the electron transport layer; a hole transport layer located on the photoactive layer; and a counter electrode positioned on the hole transport layer, wherein the hole transport layer comprises: a non-conductive polymer matrix; and the non-conductive
  • a photoelectric device comprising a composite of carbon nanotubes and hole transport materials located in a polymer matrix.
  • the non-conductive polymer is poly (methyl methacrylate) (PMMA), ethylene-vinyl acetate (EVA), polyvinyl chloride (PVC), polyethylene (polyethylene, PE),
  • PC polycarbonate
  • PB polybutylene
  • the hole transport material is P3HT (poly (3-hexylthiophene)
  • the carbon nanotubes may be selected from single wall carbon nanotubes,
  • the photoactive layer may be a quantum dot layer.
  • the quantum dot is CdS, CdSe, CdTe, PbS, PbSe, PbS x S ei . x (0 ⁇ x ⁇ l), Bi 2 S 3 , Bi 2 Se 3 , InP, InCuS 2 , In (CuGa) Se 2 , Sb 2 S 3 , Sb 2 Se 3 , SnS x (l ⁇ x ⁇ 2) , NiS, CoS, FeS x (l ⁇ x ⁇ 2), In 2 S 3 , MoS, MoSe, or combinations thereof.
  • the quantum dot may include an inorganic ligand on the surface.
  • the inorganic ligand may be Iodide.
  • the electron transport layer may include Ti0 2 , Sn0 2 , ZnO, W0 3 , Nb 2 0 5 , TiSr0 3 , ln 2 0 3 , or a combination thereof.
  • the thickness of the hole transport layer may be 40 nm or more and 200 nm or less.
  • the thickness of the photoactive layer may be 150 nm or more and 300 nm or less.
  • the hole transport material according to one embodiment of the present invention has excellent selective transport ability for holes formed in the photoactive layer of a solar cell photovoltaic device, thereby improving the photoelectric conversion efficiency of the photoelectric device. Can be improved.
  • Absorption capacity may be improved, and stability of the photoelectric device including the same may be improved.
  • FIG. 1 is a schematic diagram of a solar cell of one embodiment of the present invention.
  • FIG 3 shows the surface of the SWNT / P3HT solution-drop coated surface during the manufacturing process of the embodiment.
  • FIG. 5 is light absorption measurement data of solar cells of Examples and Comparative Examples.
  • parts such as layers, membranes, areas, and plates are “on” or “on” other parts.
  • An embodiment of the present invention provides a hole transport material comprising a nonconductive polymer matrix; and a composite of carbon nano-nouvves and hole transport materials located in the nonconductive polymer matrix.
  • an optoelectronic device including the same is provided.
  • the photoelectric device 100 is specifically, a transparent electrode 20 as illustrated in FIG. 1; an electron transport layer positioned on the transparent electrode 20.
  • a photoactive layer 40 positioned on the electron transport layer 30; a hole transport layer 50 located on the photoactive layer 40; and a counter electrode disposed on the hole transport layer 50; 60); and the hole transport layer 50 may include the hole transport material.
  • the photoelectric device 100 may be a solar cell, but is not limited thereto.
  • Various photovoltaic elements 100 other than batteries may be used.
  • a case where the photovoltaic element 100 is a solar cell will be described.
  • the composite of carbon nanotubes and hole transport material is carbon nanotubes and
  • the hole transport material is uniformly dispersed in the non-conductive polymer matrix
  • the hole transport material may be in the form or specifically the form in which the hole transport material is wrapped around the carbon nano-lloves, but is not limited to such a form.
  • the carbon nano-rloves and the hole transport material form a complex, the complexes are incorporated into the matrix.
  • a hole transport path can be formed, and carbon nanotubes are thought to contribute to the selective transport of holes.
  • Electron Reference Energy Band Diagram The energy level of each layer (transparent electrode, electron transport layer, photoactive layer, hole transport layer, counter electrode) constituting the state-positive cell affects the spontaneous separation and spontaneous movement of photoelectrons and light holes. remind
  • the matching of energy levels of these layers can be improved, thereby improving the selective transfer efficiency of the holes created in the photoactive layer 40.
  • the short-circuit current density of the circuit can be significantly improved, the photoelectric conversion efficiency (PCE) can be improved significantly, the open voltage of the solar cell is improved, and the life time of the carrier including electrons and holes is increased. The recombination of electrons and holes decreases,
  • the hole transport layer 50 may improve light absorption through reinforcement interference with the photoactive layer 40.
  • the hole transport layer 50 may be formed by the physical structure formed by the hole transport layer 50 including carbon nanotubes.
  • the carbon nano-lube in the hole transport layer 50 can scatter the light to extend the light path in the solar cell. As a result, the light absorption efficiency can be improved. Intra-cell travel path of incident light increases, the amount of reflected light out of the cell decreases, and the light absorption rate may increase.
  • the hole transport layer 50 comprises a non-conductive polymer matrix
  • the non-conductive polymer is an electrically insulating polymer, poly (methyl methacrylate) (PMMA), ethylene-vinyl acetate (EVA), polyvinyl chloride (polyvinyl chloride). , PVC), Polyethylene (polyethylene, PE), polycarbonate (PC), polybutylene (PB), or a combination of these; more specifically, it may be PMMA, but not limited to Other polymer matrices can be employed as long as the above-described effects can be achieved by having a matrix-like property that can disperse the composite of carbon nanotubes and hole transport materials inside.
  • the hole transport material may be an organic hole transport material, and specifically, may be a thiophene-based organic material. More specifically, P3HT (poly (3-hexylthiophene)),
  • the hole transport material is a hole transport function It is possible, but not limited to, to employ other organic hole transport materials that can be used.
  • the carbon nano-lube may be a multi-wall carbon nanotube
  • MWCNTs or single wall carbon nanotubes (SWCNTs), but is not limited to this, although it may be desirable that they are single wall carbon nanotubes. This is because of the metallic and p-type semiconductor properties due to the symmetry of the two-dimensional carbon lattice.
  • the hole transport layer 50 is formed on the photoactive layer 40, carbon nanotubes, and the like.
  • It can be formed by applying a precursor solution containing a hole transport material, followed by application and drying of a non-conductive polymer solution.
  • the solvent of the precursor solution can be appropriately employed depending on the type of hole transport material used. If the hole transport material is PEDOT: PSS, a polar solvent containing water can be used. If the hole transport material is P3AT, a nonpolar solvent such as toluene, chlorobenzene, or chloroform can be used to prepare the precursor solution. In polymeric polymer solutions, chlorobenzene can be used as an example solvent when the non-conductive polymer is PMMA.
  • the precursor solution is coated with a composite of carbon nanotubes and hole transport materials.
  • the coating of the above-mentioned nonconductive polymer solution is conventional.
  • Processes such as printing, doctor blades and Langmuir Blodgett can be used, but are not limited to this.
  • the thickness of the hole transport layer 50 may be a thickness in which the photoactive layer 40 and the counter electrode 60 are physically and safely separated, and smooth hole transfer is performed.
  • the hole transport layer 50 may be formed.
  • the thickness can be 40 nm to 200 nm.
  • the photoactive layer 40 may be a quantum dot layer.
  • the photoactive layer 40 may include a hole transport material according to an embodiment of the present invention. The photoelectric conversion efficiency can be improved.
  • the quantum dot is CdS, CdSe, CdTe, PbS, PbSe, PbS x Se,. x (0 ⁇ x ⁇ l), Bi 2 S 3 , Bi 2 Se 3 , InP, InCuS 2 , In (CuGa) Se 2 , Sb 2 S 3 , Sb 2 Se 3 , SnS x (l ⁇ x ⁇ 2) , NiS, CoS, FeS x (l ⁇ x ⁇ 2), In 2 S 3 , MoS, MoSe, or a combination thereof, but may not be limited thereto.
  • the element selected from group 13 may be a doped material.
  • the quantum dot may further include an oleic acid or an oleyamine-bound ligand which acts as a surfactant on the surface to secure a stable solvent dispersed phase of the quantum dot.
  • the ligand is conductive. Since the quantum point can be used as a short-length ligand-ligand substituted, the contact resistance between the quantum points can be reduced.
  • the quantum dot may include an inorganic iodide ligand on the surface. By including the iodide ligand, the mobility of the carrier is improved. As a result, the battery characteristics of the solar cell may be improved.
  • the type of ligand is not limited thereto.
  • the quantum dots more specifically include PbS containing iodide ligands on the surface.
  • It can be a quantum dot, but it is not limited to it.
  • PbS quantum dots containing iodide ligands can be prepared by subjecting ligand exchange reactions to quantum dots on which organic ligands, such as oleate, have been formed.
  • Ligand-formed PbS quantum dots can be prepared by mixing a methylammonium iodide solution. A solution containing the surface-treated quantum dots is then applied to the electron transport layer 30 and dried.
  • Quantum dot layer can be formed by application of conventional coating methods, such as spin coating, dip coating, spray coating, dropping, Processes such as dispensing, printing, doctor blades, and Tangmuk Blodgett can be used, but are not limited to these.
  • the thickness of the photoactive layer 40 may be 150 nm or more and 300 nm or less, but is not limited thereto.
  • the electron transport layer 30 may include Ti0 2 , Sn0 2 , ZnO, W0 3 , Nb 2 0 5 , TiSr0 3 , ln 2 0 3, or
  • It may be a combination of these or a substance doped with an element selected from Group 15 of the periodic table, but it is not limited thereto.
  • the electron transport layer 30 may be formed by coating and drying a precursor solution containing the material on the transparent electrode.
  • the coating may be performed by a conventional coating method. For example, spin coating may be performed. coating, dip coating, spray coating, dropping, dispensing, printing, Processes such as doctor blades and Langmuir Blodgett can be used, but are not limited to these.
  • the thickness of the electron transport layer 30 may be 50 nm to 150 nm in consideration of the efficiency of the solar cell, but is not limited thereto.
  • a solar cell of one embodiment of the present invention is provided at the bottom of the transparent electrode 20.
  • the transparent substrate 10 may further include a transparent substrate 10 positioned thereon.
  • the transparent substrate 10 serves as a support for supporting a structure on the substrate and may be used as long as the substrate transmits light.
  • a glass substrate may be a rigid substrate.
  • Polyethylene terephthalate, polyimide which include, as a flexible substrate
  • Triacetyl cellulose Triacetyl cellulose, polyether sulfone substrate, and the like.
  • the transparent electrode 20 disposed on the transparent substrate includes: indium tin oxide, fluorine-doped tin oxide, aluminum-doped zinc oxide, May contain, but is not limited to, indium zinc oxide.
  • the counter electrode 60 may include platinum, gold, aluminum, silver, titanium, cream, nickel, or the like, and may have a single layer of the same metal or a multi-layer structure including different metals. However, this is not a limitation.
  • the counter electrode 60 may be formed on the hole transport layer 50 through a deposition method.
  • the counter electrode 60 may be formed by physical deposition or chemical deposition, and may be formed by thermal deposition.
  • the present invention is not limited thereto, and a patterning process may be added depending on the desired shape of the electrode.
  • the solution mixed with bis (trimethylsilyl) sude was added and stirred, followed by cooling at room temperature.
  • the prepared PbS quantum dots were recovered by centrifugation, and the washing solution was washed. Acetone, nucleic acid, and two methanols were used in chronological order. The final concentration was 50 mg / ml. Dispersed in octane.
  • N, N-di methylformamide DMF
  • octane N, N-di methylformamide
  • three washes were performed by centrifugation using octane. After the last wash, 0.2 mL of octane was removed. After replacing the solvent with luene, centrifugation was performed again, and the obtained nanoparticle precipitate was dried in a nitrogen atmosphere. Then, 160 uL of butylamine was added to dissolve it.
  • the prepared nanoparticles were washed twice with centrifugation using methanol, and dissolved in a mixture of 5 ml of chloroform and 5 ml of methanol.
  • P3HT was added to chlororobenzene to prepare a solution at a concentration of 0.6 jng / ml, and 2.5 mg of SWCNT was added. Ultra-sonication was performed for 10 minutes while cooling the solution. Thereafter, 5 ml of chlororobenzene was added. 8 minutes at 10000 g
  • the supernatant was recovered using a centrifuge. Toluene 10 ml was added to the collected solution and left at 70 ° C. for 30 minutes. The solution was removed, centrifuged at 16000 g for 4 minutes, and the precipitate was recovered. Repeated. Dispersed in Chloroform at a ratio of 1: 8 to the weight of the final precipitate. The solution was used after 10 minutes of ultrasonication at 10% power.
  • the PbS mixture prepared in (2) of Preparation Example was spin-coated at 2500 rpm for 90 seconds thereon, and then dried at 100 ° C. for 10 minutes to form a quantum dot layer of 220 nm.
  • a solar cell was manufactured in the same manner as in the above example, except that a hole transport layer was formed without using a SWNT P3HT solution.
  • SEM scanning electron microscope
  • FIG 3 shows the surface of the SWNT / P3HT solution-drop coated surface during the manufacturing process of the embodiment.
  • the transmission electron microscope (TEM) photograph shows that the SWNT / P3HT complex is uniformly coated on the quantum dot layer. Afterwards, the SWNT / P3HT complex is uniformly distributed on the PMMA through spin coating and drying of the PMMA solution.
  • the electrical characteristics of the solar cells of the above examples and comparative examples were measured. Specifically, the short circuit current density (Jsc), the open circuit voltage (Voc), the fill factor (FF), and
  • Photoelectric conversion efficiency was measured and the measurements were made under standard conditions (100 mW / Cm 2 ).
  • FIG. 4 shows the results of the electrical characteristics measurement.
  • the photoelectric conversion efficiency is compared with the comparative example by the remarkable improvement of the short-circuit current density and the open-circuit voltage in the embodiment with the hole transport layer of the present invention. It can be seen that the improvement is about 1.5 times.
  • the absorption rate of the embodiment is improved in the entire wavelength region.
  • the solar cell of Examples and Comparative Examples was operated in an ambient air without humidity control for 35 days and the change of electrical characteristics was measured.
  • the measurement method was the same as in Example 2. Is shown in Figure 6.
  • 'control' is a comparative example, and 'SWNT' represents an embodiment.
  • the solar cell of the embodiment maintains stable electrical characteristics for 35 days compared to the comparative example.
  • photoelectric element 10 substrate 20: transparent electrode

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  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

La présente invention concerne un matériau de transport de trous et un élément photoélectrique le comprenant et peut fournir un matériau de transport de trous et un élément photoélectrique le comprenant, le matériau de transport de trous comprenant : une matrice polymère non conductrice ; et un composite d'une substance de transport de trous et d'un nanotube de carbone situé dans la matrice polymère non conductrice.
PCT/KR2017/009997 2017-04-06 2017-09-12 Matériau de transport de trous et élément photoélectrique le comprenant WO2018186542A1 (fr)

Applications Claiming Priority (2)

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KR1020170044653A KR20180113299A (ko) 2017-04-06 2017-04-06 정공수송재료 및 이를 포함하는 광전 소자
KR10-2017-0044653 2017-04-06

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KR102093431B1 (ko) * 2018-09-13 2020-03-25 경북대학교 산학협력단 페로브스카이트 태양전지 및 이의 제조방법
CN111243869B (zh) * 2018-11-29 2022-06-10 中国科学院福建物质结构研究所 一种复合材料、其制备方法及其应用
EP4099415A4 (fr) * 2020-01-31 2024-02-28 Zeon Corporation Élément de conversion photoélectrique et son procédé de fabrication
CN114068826A (zh) * 2020-08-03 2022-02-18 湖南鼎一致远科技发展有限公司 一种空穴传输层和色带及其制备方法
KR102803540B1 (ko) 2023-11-16 2025-05-08 한국생산기술연구원 전하수송능력과 안정성이 개선된 광전소자 및 그의 제조방법

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KR20120120514A (ko) * 2011-04-22 2012-11-02 한국과학기술원 도핑 탄소나노구조체를 이용한 소자 제어방법 및 도핑 탄소나노구조체를 포함하는 소자
KR101251718B1 (ko) * 2010-01-26 2013-04-05 경북대학교 산학협력단 유기 태양전지용 정공수송층 조성물, 이를 이용한 유기 태양전지의 제조방법 및 그에 따라 제조된 유기 태양전지
KR101543438B1 (ko) * 2015-02-27 2015-08-11 성균관대학교산학협력단 페로브스카이트 태양전지 및 이의 제조 방법
WO2015140548A1 (fr) * 2014-03-18 2015-09-24 Isis Innovation Limited Couche de conduction par trous

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Publication number Priority date Publication date Assignee Title
KR101251718B1 (ko) * 2010-01-26 2013-04-05 경북대학교 산학협력단 유기 태양전지용 정공수송층 조성물, 이를 이용한 유기 태양전지의 제조방법 및 그에 따라 제조된 유기 태양전지
US20110277822A1 (en) * 2010-05-11 2011-11-17 Honeywell International Inc. Composite electron conductor for use in photovoltaic devices
KR20120120514A (ko) * 2011-04-22 2012-11-02 한국과학기술원 도핑 탄소나노구조체를 이용한 소자 제어방법 및 도핑 탄소나노구조체를 포함하는 소자
WO2015140548A1 (fr) * 2014-03-18 2015-09-24 Isis Innovation Limited Couche de conduction par trous
KR101543438B1 (ko) * 2015-02-27 2015-08-11 성균관대학교산학협력단 페로브스카이트 태양전지 및 이의 제조 방법

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