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WO2018190753A1 - Élément combiné de mémoire magnétorésistive - Google Patents

Élément combiné de mémoire magnétorésistive Download PDF

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Publication number
WO2018190753A1
WO2018190753A1 PCT/RU2018/050018 RU2018050018W WO2018190753A1 WO 2018190753 A1 WO2018190753 A1 WO 2018190753A1 RU 2018050018 W RU2018050018 W RU 2018050018W WO 2018190753 A1 WO2018190753 A1 WO 2018190753A1
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Prior art keywords
cells
magnetization
cell
mram
layer
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PCT/RU2018/050018
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English (en)
Russian (ru)
Inventor
Алексей Павлович МИХАЙЛОВ
Алексей Васильевич ХВАЛЬКОВСКИЙ
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Общество С Ограниченной Ответственностью "Крокус Наноэлектроника" (Ооо "Крокус Наноэлектроника")
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Publication of WO2018190753A1 publication Critical patent/WO2018190753A1/fr

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods

Definitions

  • the present invention describes a magnetoresistive memory element consisting of random access magnetic memory (MRAM) cells comprising a tunneling magnetic junction and having improved switching efficiency, lower power consumption, improved resistance to external magnetic fields, and providing reliable data readability.
  • MRAM random access magnetic memory
  • the present invention describes the multi-cell bits of MRAM and their configurations, as well as methods for writing information to them and methods for reading this information.
  • Patent US7489015 (Samsung Electronics Co., Ltd., 02/10/2009) discloses a memory device, in particular MRAM memory, containing a position protected against an external magnetic field.
  • the technical problem solved by the claimed technical solution is the implementation of the design of the MRAM memory element, which provides increased stability of the data recorded on this cell.
  • the technical result coincides with the solution of the technical problem and consists in increasing the safety of information in the elements on the bit cells of the MRAM memory. Additionally, the task of monitoring the reliability of the information being read is also solved.
  • a magneto-resistive memory element is declared, consisting of two MRAM cells, each of which contains at least one layer of magnetic material with a variable orientation of the magnetization vector (free layer) and at least one composite layer (reference layer), consisting of two oppositely directed magnetic layers with a fixed direction of the magnetization vector, the direction of which is determined by the layer closest to free layer, and the light axis of the cells are co-directional, regardless of the spatial arrangement of the cells, and the magnetization of the free layers of each of the cells are oppositely directed.
  • MRAM magneto-resistive memory element
  • the claimed method of recording information on the above memory element characterized in that in the process of recording information, the magnetization vectors of the free layer of each of the cells are changed so that they are opposite to each other.
  • a method for reading information from the above MRAM element characterized in that the direction of magnetization of the free layers of each cell is determined, and if the magnetization of the cells is opposite to the direction, then the information is read from the element, otherwise it is believed that the information contained in the element, has lost its integrity and is not subject to reading.
  • an MRAM element consisting of n MRAM cells, where n> 3, each cell containing at least one layer of magnetic material with a variable orientation of the magnetization vector (free layer) and at least one layer with a fixed direction magnetization vector (reference layer), while the easy axis of the first cell of this MRAM element has a given direction, and the direction of the easy axis of each subsequent cell is rotated relative to the previous cell by an angle equal to 27J1 ⁇ 10%, p and the angle between the cell with the number n and the first cell is also 2n / n ⁇ 10%.
  • the claimed method of recording information in the above memory element MRAM characterized in that it is set the direction of magnetization for the first cell along or opposite to the direction of magnetization of its reference layer (corresponds to a logical zero or one in the memory element), while for each cell with increasing serial number the magnetization has a positive projection on the direction of magnetization of the previous cell.
  • the claimed method of reading information from a memory element characterized in that they determine the direction of the magnetization vector of the free layer of each cell relative to its reference layer, determine the cells in which the direction of the magnetization vector of the free layer corresponds to logical zero and in which the direction of the magnetization vector of the free layer corresponds to a logical unit, while determining the state of the element as the state of most of its cells, and After the reading procedure, the state of all cells of the element is brought into correspondence with the determined state of the element.
  • a combined MRAM element comprising two memory elements, each of which corresponds to the above construction of an MRAM element of five memory cells, each of the cells of the first mentioned element having a cell paired to it in the second mentioned element, in which the light axis of the cells are aligned , regardless of the spatial arrangement of the centers of the cells of the first and second memory elements, and the magnetization of the free layers of the cells of the first memory element and correspond them they paired memory cells of the second element are opposite directed.
  • the claimed method of recording information in the combined memory element described above characterized in that in the first memory element specify the direction of magnetization along the easy axis of the first cell, determine the magnetization state for the first cell as logical 0 or logical 1, write information into the memory element so that the direction of magnetization along the easy axis of each subsequent cell relative to the previous one is identical to the state of the magnetization the first cell, and the directions of the magnetization vectors of the free layer of the cells of the second memory element are defined as oppositely directed to the directions of the magnetization of the free layer of the corresponding paired cells of the first memory element.
  • a method for reading information from a combined memory element described above characterized in that the direction of the magnetization vector of the free layer of each cell of the first memory element and the paired cell of the second memory element is determined, pairs of cells are determined for which the directions of the magnetization vectors are free layers are oppositely directed, the remaining paired cells are recognized as having lost information, and the state of the combined of a memory element is defined as the state of most cells of a combined memory element that have stored information, and if there are no such cells, then all of the mentioned combined element is considered to have lost information and cannot be read, and after the reading procedure, the state of all cells is brought into line with the specific state of the element.
  • FIG. 1 illustrates a sectional view of a memory cell.
  • FIG. 2 illustrates a view of a memory cell (top view).
  • FIG. 3 illustrates an embodiment of a combined MRAM element.
  • FIG. 4 illustrates an example of a logic operation when checking the integrity of a combined memory element.
  • FIG. 5 illustrates an example of a five-cell MRAM bit.
  • FIG. 6 illustrates an example of a combined paired MRAM bit. DETAILED DESCRIPTION OF THE INVENTION
  • Magnetic random access memory uses magnetic rather than electrical effects to store bits of information.
  • the use of magnetic memory in most cases allows you to increase the performance of electronic devices, allowing you to store large amounts of information and at the same time have a fairly fast write / read time, do not require high power consumption (compared to other types of memory).
  • MRAM allows you to save information even when the power is off, allowing electronic devices running on the basis of MRAM to start instantly, unlike devices with conventional electronic memory, which require preliminary initialization to load software into memory.
  • a typical element (chip) of magnetic memory includes an array of cells.
  • the memory cells may include a layer of magnetic material with a variable orientation of the magnetization vector and a layer of magnetic material, in which the magnetization vector has a fixed direction.
  • a layer with a variable orientation of the magnetization vector is used to store information and is often referred to in the literature as a free layer (FL - free layer or sometimes SL - sence layer).
  • a layer with a fixed direction of the magnetization vector is called a reference layer (RL - reference layer).
  • the resistance of the MRAM magnetic memory cell in the parallel and antiparallel positions of the free and reference layers is different due to the tunnel magnetoresistance effect (TMR).
  • TMR tunnel magnetoresistance effect
  • the critical field is the cell switching field at zero temperature for a given direction of the magnetic field.
  • the energy barrier (E b ) is the difference between the values at the minimum and in the barrier.
  • the energy value in the barrier is defined as the value of the maximum energy in the minimum path between the two positions of the minimum energy.
  • the energy barrier determines such an important parameter as the temperature stability parameter delta ( ⁇ ).
  • This parameter is equal to the ratio of the energy barrier that must be overcome by the magnetization of the free layer of the memory cell in order to switch between two stable states of the memory cell (corresponding to logical “zero” and “unit”), to the cell temperature (T) in units of the Boltzmann constant ( to c ):
  • the parameter of temperature stability of memory cells allows you to determine the probability of spontaneous switching of memory cells. To do this, use a simple formula obtained from the Boltzmann distribution: Usually, the smaller the critical field, the lower the energy barrier, however, the relationship between them can be non-linear and include a number of additional parameters (cell size, angle at which the field is directed, etc.).
  • Switching the MRAM memory cells can be carried out in various ways, including switching due to the transfer of magnetic moment by spin current, switching by a magnetic field, switching by a magnetic field using heating, as well as some other methods.
  • the MRAM memory cells can switch unplanned, this can especially be manifested in a strong external magnetic field.
  • MRAM memory chips can undergo errors in the presence of an external spurious magnetic field. This is due to the fact that in the presence of an external magnetic field, the energy barrier of the MRAM cells separating the two equilibrium positions corresponding to the logical “0” and “1” changes and the cell can spontaneously move from one position to another, which will lead to loss of information.
  • the change in the energy barrier depends not only on the magnitude of the spurious external magnetic field, but also on its direction. So, for a field directed at an angle ⁇ / 4, the critical field can fall by half. Accordingly, the energy barrier can fall twice or more, in addition, the barrier can disappear altogether.
  • the dependence of the critical field on the direction for an idealized MRAM memory cell is described by the so-called Stoner-Wohlfarth theory.
  • the external magnetic field can be directed in an arbitrary direction, therefore, to calculate the energy barrier, it is necessary to focus on the direction that reduces the barrier most strongly - the worst direction.
  • this is the direction of the external magnetic field by ⁇ / 4 with respect to the easy axis.
  • FIG. 1 is a perspective view of an MRAM cell 100 according to a first preferred embodiment.
  • Cell 100 contains at least one layer of magnetic material with a variable orientation of the magnetization vector (free layer) 110 and at least one composite layer (support layer) 120, consisting of two oppositely directed magnetic layers 120a, 1206 with a fixed direction of the magnetization vector 121, 122, the direction of which is determined by the layer 120a closest to the free layer 110.
  • cell 100 may be of various shapes (rectangular, elliptical, etc.).
  • FIG. Figure 3 shows an example of the implementation of the combined memory element MRAM 10, consisting of two cells 100 and 200.
  • the light axis 130, 230 of the memory cells are co-directional, while the magnetizations of the free layers 111, 211 are oppositely directed.
  • FIG. 4 shows an example of the operation of the logic of the combined element MRAM 10.
  • the magnetization vectors 111, 211 of the free layer 110, 120 of each of the cells 100, 200 are changed so that they are oppositely directed towards each other.
  • the up and down positions shown in FIG. 4, correspond to more and less resistance of the structure. This difference is achieved due to the effect of tunnel magnetoresistance.
  • the logic of the work is that if the magnetization vectors in memory cells 100, 200 are oppositely oriented, then the data stored in this bit of memory 10 can be trusted. If the orientation of the magnetization vectors 111, 211 coincides, this will mean that the bit was exposed to an external magnetic field and lost the information stored in it and it is impossible to trust the data from this bit 10.
  • the direction of the magnetization vectors of free layers 111, 211 of each of the cells 100, 200 is determined, during which it is established whether the direction of the magnetization vector has changed in comparison with the direction of the magnetization of free layers 111, 211 of cells 100, 200 when recording information on the MRAM element 10. If the magnetization of cells 100, 200 is oppositely directed, then the information is read from the MRAM element 10, because the integrity of the information stored on it is not violated. Otherwise, when determining the magnetization of the free layers of cells 100, 200, which changed its direction to codirectional, the information contained in element 10 is recognized as having lost its integrity due to the influence of a magnetic field and cannot be read. In FIG.
  • FIG. 5 shows an example of a combined bit (element) of MRAM 20, consisting of n number of cells 100-500, where n is greater than or equal to three, in particular, of five memory cells 100-500.
  • the angle between the last cell 500 and the first 100 is also equal to ⁇ + 10%.
  • the number of cells can be different in element 20, the main thing in this structure is the observance of the position of cells 100-500 relative to each other, and the number of cells n must be greater than or equal to three.
  • the ability to store information for the 100 MRAM memory cell is determined by the so-called delta temperature stability parameter ( ⁇ ).
  • ⁇ delta temperature stability parameter
  • This parameter is equal to the ratio of the energy barrier (E ⁇ ), which must be overcome by the magnetization 111 of the free layer 110 of the memory cell 100 in order to switch between two stable states of the memory cell (the states differ in the level of resistance, which is achieved due to the effect of tunnel magnetoresistance, and correspond to the logical “zero” and “unit”), to the temperature (T) of the cell in units of the Boltzmann constant (k to ):
  • the required minimum level ⁇ should be from 45 to 60 for arrays from 100 bits to 500 Mbit.
  • ⁇ 001 2K M S , (3)
  • ⁇ and is the anisotropy energy density
  • M s is the saturation magnetization.
  • Different signs indicate that different directions of the external magnetic field can act both against the anisotropy field, thereby reducing the energy barrier and ⁇ , and in the same direction, increasing the energy barrier and ⁇ .
  • E b K U V.
  • Such a field is called critical and is denoted by H c .
  • H c H k .
  • the temperature dependence parameter taking into account the angle of inclination of the magnetic field vector to the easy axis, is connected with the critical field H with the same as described above:
  • the drop in H with a change in the angle of inclination of the magnetic field vector to the easy axis of 130-530 cells of 100-500 significantly affects the value of the barrier.
  • H 100 Oe
  • the proposed technical solution allows leveling the influence of the direction of the external magnetic field on the stability of the MRAM 10 (20) memory bit, which consists of two or more memory cells, and also allows you to control the accuracy of the information stored in the bit.
  • the combined MRAM 20 element obtained from the above method from a plurality of cells 100-500 uniformly distributed over 2 ⁇ has practically the same resistance to an external parasitic magnetic field of arbitrary direction as one cell to an external magnetic field with a fixed magnetic field along the magnetization reversal axis or perpendicular her.
  • this scheme makes it possible to almost completely level the dependence of the stability of the MRAM 20 memory element on the direction of the external parasitic magnetic field.
  • the integrity of all cells 100-500 included in it is checked.
  • the operating principle of the logic is similar to the method shown in FIG. 4.
  • the logic of work is that if the magnetization vectors in memory cells 100-500 are oppositely oriented, then the data stored in this bit of memory 20 can be trusted. If the orientation of the magnetization vectors of cells 100-500 coincides, this will mean that bit 20 has been exposed to an external magnetic field and has lost the information stored in it and data from bit 20 cannot be trusted.
  • the method of recording information in the memory element MRAM 20 is that the direction of magnetization for the first cell 100 is set along or opposite the direction of magnetization of its reference layer (corresponds to a logical zero or one in the memory element), while for each cell 200-500 element MRAM 20 with increasing serial number, the magnetization has a positive projection on the direction of magnetization of the previous cell.
  • the direction of magnetization of the support layer of cells in particular, is performed by heating in a magnetic furnace above the Curie temperature in the presence of a strong magnetic field.
  • the direction of magnetization of the free layer can be specified both by the local action of a magnetic field (due to the passage of current through current lines near the cell) and by the action of a spin-polarized current.
  • the direction of the magnetization vector of the free layers of each cell 100-500 relative to their reference layers, and during the check, cells 100-500 are determined in which the direction of the magnetization vector of the free layer corresponds to a logical zero and in which the direction of the magnetization vector of the free layer corresponds to a logical unit.
  • the state of the MRAM element 20 is determined as the state of the majority of cells 100-500 included in it, and, after the reading procedure, the state of all cells 100-500 of the element 20 is brought into correspondence with the determined state of the element 20 at the time of recording information on it, which allows restoration lost information in such memory cells.
  • the worst direction of the magnetic field for the memory element MRAM 20 is that in which information will be lost in most of the memory cells 100-500 MRAM included in the combined memory element 20, for example, if the information is lost in three out of five memory cells. Otherwise, information can be restored by the value of the data in most cells 100-500, i.e. according to their initially determined condition. In this case, for two memory cells 100, 200 out of five, the critical field decreases by 30% of the maximum, and for the remaining three 300-500 it does not change or even increases.
  • an increase in the barrier for the described case of a combined bit of memory 20 will correspond to an increase in the delta by about 12 and 20 (depending on ⁇ for the cell) in the absence of a magnetic field and anisotropy field of the cell ⁇ alliance , which will correspond to an increase in the cell lifetime by 5 to 8 orders of magnitude compared with the worst case for an ordinary cell (at an angle of inclination of the magnetic field to the easy axis in ⁇ / 4).
  • the fall of the critical field for four out of five cells 100-500 will be higher than for the specified direction and the combined element (bit) of memory 20 will be even more stable.
  • ⁇ / 20 is the worst field direction.
  • the critical field ⁇ NW will be 0.7 of the maximum achieved with the co-directional position of the direction vector of the external magnetic field and the easy axis of 130-530 cells 100-500, which is 40% higher than for a single memory cell with the same parameters.
  • FIG. 5 shows another preferred embodiment of the claimed solution, which consists of a combination of the previous ones, in particular, the architecture of the combined memory element MRAM 30 is proposed, which contains two combined memory elements 30a and 306, each of which is similar to the memory element MRAM 20.
  • Each of the cells 100a -500a of element 30a has a cell 1006-5006 of element 306 paired to it, in which the light axes of the corresponding cells are aligned, regardless of the spatial arrangement of the centers of the cells 100a-500 a and 1006-5006, and the magnetizations of the free layers of cells 100a-500a and their corresponding paired cells 1006-5006 are oppositely directed.
  • the cell arrangement of the MRAM element 30 may differ (while maintaining the relative cell orientation). So, for example, the location of cells along in a circle or along a straight line will have the same meaning. Arrows indicate the direction vectors of magnetization.
  • the method of recording information in the memory element 30 is that in the first element 30a the direction of magnetization is set along the easy axis of the first cell 100a, the state of magnetization is determined for the first cell 100a as logical 0 or logical 1. Subsequently, information is recorded in the memory element 30a so that the direction of magnetization along the easy axis of each subsequent cell 200a-500a relative to the previous cell is identical to the state of magnetization of the first cell 100a, and the directions of the magnetization vectors of the free layer of cells 1006-5006 of element 306 are determined as oppositely directed to the directions of magnetization of the free layer of the corresponding paired cells 100a-500a of the element 30a.
  • MRAM 30 To read information from the memory element, MRAM 30 consists in determining the direction of the magnetization vector of the free layer of each cell 100-500a and its paired cell 1006-5006. Then, pairs of cells are determined for which the directions of the magnetization vectors of the free layers are oppositely directed, the remaining paired cells are recognized as having lost information, and the state of the mentioned combined memory element 30 is defined as the state of most cells of the memory element that have saved information, and if there are no such cells, then the whole combined the MRAM 30 element is considered to have lost information and cannot be read, and after the reading procedure, the state of all cells is brought into correspondence an event with a certain state of an element.
  • a method of initializing the reference layers of memory cells can also be applied using the example of the MRAM 20 element, in which the cells are heated to a temperature above the Néel temperature in the presence of a magnetic field with a given power directed along the first cell 100 of the mentioned MRAM 20 element, then the heating temperature and the magnetic field power are reduced .

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)

Abstract

La présente invention décrit un élément de mémoire magnétorésistive constitué de cellules de mémoire magnétique à accès aléatoire (MRAM) comprenant un passage tunnel magnétique et possédant une efficacité de commutation améliorée, une moindre consommation d'énergie électrique, une plus grande résistance aux champs magnétiques externes et assurant une meilleure authenticité des données lues. Le résultat technique consiste à améliorer l'état intact des informations sur les éléments dans des cellules de mémoire à bits MRAM. Afin d'obtenir ce résultat technique dans une variante préférée on a fait une demande pour un élément de mémoire magnétorésistive (MRAM) constituée de deux cellules MRAM dont chacune comprend au moins une couche de matériau magnétique à orientation variable du vecteur de magnétisation (couche libre) et au moins une couche composite (couche de support) constituée de deux couches magnétiques opposées à orientation fixe du vecteur de magnétisation dont la direction est déterminée en fonction de la couche la plus proche de la couche libre, les axes légers des cellules étant dirigés en parallèle, sans tenir compte de la disposition spatiale des cellules, la magnétisation des couches libres de chacune des cellules étant orientée à l'opposé.
PCT/RU2018/050018 2017-04-12 2018-02-19 Élément combiné de mémoire magnétorésistive WO2018190753A1 (fr)

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RU2017112375A RU2648948C1 (ru) 2017-04-12 2017-04-12 Комбинированный элемент магниторезистивной памяти (варианты), способы считывания информации с элемента (варианты), способы записи информации на элемент (варианты)
RU2017112375 2017-04-12

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Citations (4)

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US6635947B2 (en) * 2000-08-21 2003-10-21 Infineon Technologies Ag Monolithically integrable inductor
US20060152969A1 (en) * 2005-01-10 2006-07-13 International Business Machines Corporation Mram device with improved stack structure and offset field for low-power toggle mode writing
US7929370B2 (en) * 2008-11-24 2011-04-19 Magic Technologies, Inc. Spin momentum transfer MRAM design
US20160380189A1 (en) * 2012-09-25 2016-12-29 Kabushiki Kaisha Toshiba Manufacturing method of magnetoresistive effect element and manufacturing apparatus of magnetoresistive effect element

Family Cites Families (1)

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Publication number Priority date Publication date Assignee Title
EP2546836A1 (fr) * 2011-07-12 2013-01-16 Crocus Technology S.A. Cellule magnétique de mémoire à accès aléatoire dotée d'une dispersion améliorée du champ de commutation

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6635947B2 (en) * 2000-08-21 2003-10-21 Infineon Technologies Ag Monolithically integrable inductor
US20060152969A1 (en) * 2005-01-10 2006-07-13 International Business Machines Corporation Mram device with improved stack structure and offset field for low-power toggle mode writing
US7929370B2 (en) * 2008-11-24 2011-04-19 Magic Technologies, Inc. Spin momentum transfer MRAM design
US20160380189A1 (en) * 2012-09-25 2016-12-29 Kabushiki Kaisha Toshiba Manufacturing method of magnetoresistive effect element and manufacturing apparatus of magnetoresistive effect element

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