WO2018190780A1 - Planarisation chimico-mécanique de nitrure de gallium - Google Patents
Planarisation chimico-mécanique de nitrure de gallium Download PDFInfo
- Publication number
- WO2018190780A1 WO2018190780A1 PCT/TR2017/050138 TR2017050138W WO2018190780A1 WO 2018190780 A1 WO2018190780 A1 WO 2018190780A1 TR 2017050138 W TR2017050138 W TR 2017050138W WO 2018190780 A1 WO2018190780 A1 WO 2018190780A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- slurry
- cmp
- pad
- slurry composition
- acid
- Prior art date
Links
- 239000000126 substance Substances 0.000 title claims abstract description 28
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims description 69
- 229910002601 GaN Inorganic materials 0.000 title claims description 62
- 239000002002 slurry Substances 0.000 claims abstract description 146
- 238000000034 method Methods 0.000 claims abstract description 61
- 238000005498 polishing Methods 0.000 claims description 47
- 239000000203 mixture Substances 0.000 claims description 34
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 19
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 17
- 239000002253 acid Substances 0.000 claims description 15
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 14
- 239000002245 particle Substances 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 10
- 239000007787 solid Substances 0.000 claims description 7
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 6
- 239000003002 pH adjusting agent Substances 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical group [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 5
- 239000012736 aqueous medium Substances 0.000 claims description 5
- 229910021529 ammonia Inorganic materials 0.000 claims description 4
- 238000011176 pooling Methods 0.000 claims description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims 3
- POULHZVOKOAJMA-UHFFFAOYSA-N dodecanoic acid Chemical compound CCCCCCCCCCCC(O)=O POULHZVOKOAJMA-UHFFFAOYSA-N 0.000 claims 2
- 239000005639 Lauric acid Substances 0.000 claims 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 claims 1
- 239000011976 maleic acid Substances 0.000 claims 1
- 235000006408 oxalic acid Nutrition 0.000 claims 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 42
- 230000008569 process Effects 0.000 abstract description 33
- 230000001965 increasing effect Effects 0.000 abstract description 12
- 230000000694 effects Effects 0.000 abstract description 8
- 238000012512 characterization method Methods 0.000 abstract description 5
- 238000005457 optimization Methods 0.000 abstract description 4
- 238000013461 design Methods 0.000 abstract description 3
- 230000003993 interaction Effects 0.000 abstract description 3
- 238000011161 development Methods 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 19
- 238000006243 chemical reaction Methods 0.000 description 12
- 230000003750 conditioning effect Effects 0.000 description 9
- 230000004044 response Effects 0.000 description 8
- 238000002474 experimental method Methods 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 6
- 239000000047 product Substances 0.000 description 6
- 230000003746 surface roughness Effects 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000523 sample Substances 0.000 description 5
- 239000008119 colloidal silica Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 238000004377 microelectronic Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 238000012216 screening Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000002378 acidificating effect Effects 0.000 description 3
- 210000000078 claw Anatomy 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- ZHNUHDYFZUAESO-UHFFFAOYSA-N Formamide Chemical compound NC=O ZHNUHDYFZUAESO-UHFFFAOYSA-N 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 239000004053 dental implant Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- -1 hydroxide ions Chemical class 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 238000004439 roughness measurement Methods 0.000 description 2
- 238000005488 sandblasting Methods 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013043 chemical agent Substances 0.000 description 1
- 238000007385 chemical modification Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000010191 image analysis Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000003913 materials processing Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000007521 mechanical polishing technique Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000005329 nanolithography Methods 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000010979 pH adjustment Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
Definitions
- the CMP material removal rate of Ga depends on the crystallographic orientation of the GaN surface and hence it is beneficial to determine the specific crystallographic orientation of the GaN surface prior to CMP.
- a simple and accurate method of surface crystalline structure determination is desirable prior to CM] 3 process setup.
- the type of surface crystalline structure can be determined by wettability (contact angle) measurements in accordance with embodiments of the present disclosure.
- Figure 7 is an enlarged view of the CMP device and the distal end of the robotic arm of Figure 6 in accordance with embodiments of the present disclosure.
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
La présente invention concerne la caractérisation de la nature chimique de surface d'échantillons de GaN et l'optimisation du processus CMP en termes de taux d'élimination de matériau et de qualité de surface par chimie en suspension et le développement de conception d'outil. Il a été observé que le CMP de GaN est préalablement entraîné par l'impact chimique à partir des interactions chimiques en suspension sur la base de l'observation de taux d'élimination de matériau croissants et d'une meilleure qualité de surface lorsque l'agressivité des composants mécaniques du processus CMP est limitée tandis que les composants chimiques sont favorisés. L'effet des variables d'établissement du processus CMP, tels qu'une déportance appliquée, un type de tampon, et un débit de suspension et une température sont également évalués afin d'optimiser les performances du CMP.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/TR2017/050138 WO2018190780A1 (fr) | 2017-04-12 | 2017-04-12 | Planarisation chimico-mécanique de nitrure de gallium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/TR2017/050138 WO2018190780A1 (fr) | 2017-04-12 | 2017-04-12 | Planarisation chimico-mécanique de nitrure de gallium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2018190780A1 true WO2018190780A1 (fr) | 2018-10-18 |
Family
ID=63792796
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/TR2017/050138 WO2018190780A1 (fr) | 2017-04-12 | 2017-04-12 | Planarisation chimico-mécanique de nitrure de gallium |
Country Status (1)
| Country | Link |
|---|---|
| WO (1) | WO2018190780A1 (fr) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6129613A (en) * | 1998-01-30 | 2000-10-10 | Philips Electronics North America Corp. | Semiconductor manufacturing apparatus and method for measuring in-situ pressure across a wafer |
| US20020185054A1 (en) * | 2001-06-08 | 2002-12-12 | Advanced Technology Materials Inc. | High surface quality gan wafer and method of fabricating same |
| EP2025468A2 (fr) * | 2007-08-09 | 2009-02-18 | Fujitsu Limited | Procédé de polissage, procédé de fabrication de substrat, et procédé de fabrication d'un appareil électronique |
| WO2010105240A2 (fr) * | 2009-03-13 | 2010-09-16 | Saint-Gobain Ceramics & Plastics, Inc. | Planarisation mécanochimique à l'aide de nanodiamant |
| EP2514858A1 (fr) * | 2009-12-18 | 2012-10-24 | Sumitomo Electric Industries, Ltd. | Substrat en cristal de nitrure du groupe iii, substrat en cristal de nitrure du groupe iii possédant une couche épitaxiale, dispositif semi-conducteur et son procédé de fabrication |
| KR101431633B1 (ko) * | 2012-09-15 | 2014-09-23 | 김건우 | 화학적 기계적 연마장치의 리테이너 링 |
| CN104745095A (zh) * | 2015-04-03 | 2015-07-01 | 清华大学 | 一种GaN厚膜片CMP组合物及其制备方法 |
-
2017
- 2017-04-12 WO PCT/TR2017/050138 patent/WO2018190780A1/fr active Application Filing
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6129613A (en) * | 1998-01-30 | 2000-10-10 | Philips Electronics North America Corp. | Semiconductor manufacturing apparatus and method for measuring in-situ pressure across a wafer |
| US20020185054A1 (en) * | 2001-06-08 | 2002-12-12 | Advanced Technology Materials Inc. | High surface quality gan wafer and method of fabricating same |
| EP2025468A2 (fr) * | 2007-08-09 | 2009-02-18 | Fujitsu Limited | Procédé de polissage, procédé de fabrication de substrat, et procédé de fabrication d'un appareil électronique |
| WO2010105240A2 (fr) * | 2009-03-13 | 2010-09-16 | Saint-Gobain Ceramics & Plastics, Inc. | Planarisation mécanochimique à l'aide de nanodiamant |
| EP2514858A1 (fr) * | 2009-12-18 | 2012-10-24 | Sumitomo Electric Industries, Ltd. | Substrat en cristal de nitrure du groupe iii, substrat en cristal de nitrure du groupe iii possédant une couche épitaxiale, dispositif semi-conducteur et son procédé de fabrication |
| KR101431633B1 (ko) * | 2012-09-15 | 2014-09-23 | 김건우 | 화학적 기계적 연마장치의 리테이너 링 |
| CN104745095A (zh) * | 2015-04-03 | 2015-07-01 | 清华大学 | 一种GaN厚膜片CMP组合物及其制备方法 |
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