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WO2018194975A3 - Figoptical objective for operation in euv spectral region - Google Patents

Figoptical objective for operation in euv spectral region Download PDF

Info

Publication number
WO2018194975A3
WO2018194975A3 PCT/US2018/027785 US2018027785W WO2018194975A3 WO 2018194975 A3 WO2018194975 A3 WO 2018194975A3 US 2018027785 W US2018027785 W US 2018027785W WO 2018194975 A3 WO2018194975 A3 WO 2018194975A3
Authority
WO
WIPO (PCT)
Prior art keywords
figoptical
objective
spectral region
reflector
pattern
Prior art date
Application number
PCT/US2018/027785
Other languages
French (fr)
Other versions
WO2018194975A2 (en
WO2018194975A8 (en
Inventor
Daniel Gene Smith
David M. Williamson
Original Assignee
Nikon Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US15/599,197 external-priority patent/US10890849B2/en
Application filed by Nikon Corporation filed Critical Nikon Corporation
Priority to CN201880026044.8A priority Critical patent/CN110753882B/en
Priority to PCT/US2018/029160 priority patent/WO2018200536A2/en
Priority to CN201880027134.9A priority patent/CN110892328B/en
Priority to PCT/US2018/031796 priority patent/WO2018208912A2/en
Priority to CN201880030036.0A priority patent/CN110914760B/en
Publication of WO2018194975A2 publication Critical patent/WO2018194975A2/en
Publication of WO2018194975A3 publication Critical patent/WO2018194975A3/en
Publication of WO2018194975A8 publication Critical patent/WO2018194975A8/en
Priority to US16/655,932 priority patent/US11934105B2/en
Priority to US16/664,478 priority patent/US11054745B2/en
Priority to US16/679,052 priority patent/US11300884B2/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/02—Catoptric systems, e.g. image erecting and reversing system
    • G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
    • G02B17/0647—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/02—Catoptric systems, e.g. image erecting and reversing system
    • G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
    • G02B17/0647—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors
    • G02B17/0663—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors off-axis or unobscured systems in which not all of the mirrors share a common axis of rotational symmetry, e.g. at least one of the mirrors is warped, tilted or decentered with respect to the other elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Lenses (AREA)

Abstract

A catoptric system having a reference axis and first, second, and third reflectors. The first reflector contains a pattern-source carrying a substantially one-dimensional pattern. A combination of the second and third reflectors is configured to form an optical image of the pattern, with a demagnification coefficient N > 1 in extreme UV light, and with only two beams of light that have originated at the first reflector as a result of irradiation of the first reflector with light incident upon it. An exposure apparatus employing the catoptric system and method of device manufacturing with the use of the exposure apparatus.
PCT/US2018/027785 2017-04-19 2018-04-16 Figoptical objective for operation in euv spectral region WO2018194975A2 (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
CN201880026044.8A CN110753882B (en) 2017-04-19 2018-04-16 Optical imaging, reflection system, exposure tool, apparatus, and device manufacturing method
PCT/US2018/029160 WO2018200536A2 (en) 2017-04-26 2018-04-24 Illumination system with flat 1d-patterned mask for use in euv-exposure tool
CN201880027134.9A CN110892328B (en) 2017-04-26 2018-04-24 Reflection system, extreme ultraviolet exposure tool, lithography exposure tool, and optical system
PCT/US2018/031796 WO2018208912A2 (en) 2017-05-11 2018-05-09 Illumination system with curved 1d-patterned mask for use in euv-exposure tool
CN201880030036.0A CN110914760B (en) 2017-05-11 2018-05-09 Reflection system, extreme ultraviolet exposure tool and lithography exposure tool
US16/655,932 US11934105B2 (en) 2017-04-19 2019-10-17 Optical objective for operation in EUV spectral region
US16/664,478 US11054745B2 (en) 2017-04-26 2019-10-25 Illumination system with flat 1D-patterned mask for use in EUV-exposure tool
US16/679,052 US11300884B2 (en) 2017-05-11 2019-11-08 Illumination system with curved 1d-patterned mask for use in EUV-exposure tool

Applications Claiming Priority (10)

Application Number Priority Date Filing Date Title
US201762487245P 2017-04-19 2017-04-19
US62/487,245 2017-04-19
US201762490313P 2017-04-26 2017-04-26
US62/490,313 2017-04-26
US201762504908P 2017-05-11 2017-05-11
US62/504,908 2017-05-11
US15/599,148 2017-05-18
US15/599,197 2017-05-18
US15/599,197 US10890849B2 (en) 2016-05-19 2017-05-18 EUV lithography system for dense line patterning
US15/599,148 US11099483B2 (en) 2016-05-19 2017-05-18 Euv lithography system for dense line patterning

Related Parent Applications (2)

Application Number Title Priority Date Filing Date
US15/599,148 Continuation-In-Part US11099483B2 (en) 2016-05-19 2017-05-18 Euv lithography system for dense line patterning
PCT/US2018/029160 Continuation-In-Part WO2018200536A2 (en) 2017-04-26 2018-04-24 Illumination system with flat 1d-patterned mask for use in euv-exposure tool

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US15/599,197 Continuation-In-Part US10890849B2 (en) 2016-05-19 2017-05-18 EUV lithography system for dense line patterning
US16/655,932 Continuation US11934105B2 (en) 2017-04-19 2019-10-17 Optical objective for operation in EUV spectral region

Publications (3)

Publication Number Publication Date
WO2018194975A2 WO2018194975A2 (en) 2018-10-25
WO2018194975A3 true WO2018194975A3 (en) 2019-02-07
WO2018194975A8 WO2018194975A8 (en) 2019-02-28

Family

ID=63856867

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2018/027785 WO2018194975A2 (en) 2017-04-19 2018-04-16 Figoptical objective for operation in euv spectral region

Country Status (2)

Country Link
CN (1) CN110753882B (en)
WO (1) WO2018194975A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109960031B (en) * 2019-04-28 2024-02-09 湖南谱峰光电有限公司 Aerostat laser relay mirror system and simulation device and simulation method thereof

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5003567A (en) * 1989-02-09 1991-03-26 Hawryluk Andrew M Soft x-ray reduction camera for submicron lithography
US6331710B1 (en) * 1998-12-02 2001-12-18 Zhijiang Wang Reflective optical systems for EUV lithography
US20130070227A1 (en) * 2010-08-25 2013-03-21 Carl Zeiss Smt Gmbh Imaging optical system
US20140253892A1 (en) * 2013-03-11 2014-09-11 Taiwan Semiconductor Manufacturing Company, Ltd. Extreme Ultraviolet Lithography Projection Optics System and Associated Methods
US20140268086A1 (en) * 2013-03-13 2014-09-18 Taiwan Semiconductor Manufacturing Company, Ltd. Extreme Ultraviolet Lithography Process and Mask

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105511065B (en) * 2009-12-14 2019-04-23 卡尔蔡司Smt有限责任公司 Illumination optics, lighting system, projection exposure apparatus and assembly manufacture method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5003567A (en) * 1989-02-09 1991-03-26 Hawryluk Andrew M Soft x-ray reduction camera for submicron lithography
US6331710B1 (en) * 1998-12-02 2001-12-18 Zhijiang Wang Reflective optical systems for EUV lithography
US20130070227A1 (en) * 2010-08-25 2013-03-21 Carl Zeiss Smt Gmbh Imaging optical system
US20140253892A1 (en) * 2013-03-11 2014-09-11 Taiwan Semiconductor Manufacturing Company, Ltd. Extreme Ultraviolet Lithography Projection Optics System and Associated Methods
US20140268086A1 (en) * 2013-03-13 2014-09-18 Taiwan Semiconductor Manufacturing Company, Ltd. Extreme Ultraviolet Lithography Process and Mask

Also Published As

Publication number Publication date
WO2018194975A2 (en) 2018-10-25
WO2018194975A8 (en) 2019-02-28
CN110753882A (en) 2020-02-04
CN110753882B (en) 2024-06-28

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