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WO2018105113A1 - Dispositif de traitement de substrat, unité de refroidissement, et structure d'isolation thermique - Google Patents

Dispositif de traitement de substrat, unité de refroidissement, et structure d'isolation thermique Download PDF

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Publication number
WO2018105113A1
WO2018105113A1 PCT/JP2016/086775 JP2016086775W WO2018105113A1 WO 2018105113 A1 WO2018105113 A1 WO 2018105113A1 JP 2016086775 W JP2016086775 W JP 2016086775W WO 2018105113 A1 WO2018105113 A1 WO 2018105113A1
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WO
WIPO (PCT)
Prior art keywords
zone
gas
opening
intake pipe
flow rate
Prior art date
Application number
PCT/JP2016/086775
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English (en)
Japanese (ja)
Inventor
哲也 小杉
村田　等
山口　天和
周平 西堂
Original Assignee
株式会社日立国際電気
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社日立国際電気 filed Critical 株式会社日立国際電気
Priority to PCT/JP2016/086775 priority Critical patent/WO2018105113A1/fr
Priority to JP2018555424A priority patent/JP6752291B2/ja
Priority to TW106138024A priority patent/TWI669411B/zh
Publication of WO2018105113A1 publication Critical patent/WO2018105113A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

Definitions

  • the present invention relates to a substrate processing apparatus, a cooling unit, and a heat insulating structure.
  • a semiconductor manufacturing apparatus as an example of the substrate processing apparatus
  • a vertical apparatus as an example of the semiconductor manufacturing apparatus.
  • a boat as a substrate holding unit that holds a plurality of substrates (hereinafter also referred to as wafers) in multiple stages is carried into a processing chamber in a reaction tube while holding the substrates, and temperature control is performed in a plurality of zones.
  • the substrate is processed at a predetermined temperature.
  • cooling gas is supplied from a cooling mechanism to improve the temperature lowering characteristics after substrate processing.
  • Patent Document 1 discloses a technique for changing the flow of a cooling gas at the time of film formation, temperature drop, and temperature recovery by opening and closing an on-off valve.
  • Patent Document 2 describes a technique for setting the temperature drop rate of each part of the heater by changing the number and arrangement of the blowout holes.
  • JP 2014-209569 A International Patent Publication No. 2008/099449
  • An object of the present invention is to provide a configuration in which temperature deviations in a plurality of zones are made uniform by uniformly cooling a reaction tube.
  • an intake pipe that is provided for each zone and supplies a gas that cools the reaction tube, a control valve that is provided in the intake pipe and adjusts the flow rate of the gas, and is supplied from the intake pipe.
  • a buffer section for temporarily storing the gas, and openings provided at the same interval in the circumferential direction in the zone so as to blow the gas stored in the buffer section toward the reaction tube,
  • the temperature deviation at the time of temperature reduction between a plurality of zones can be made uniform, so that the temperature recovery time of the substrate is shortened, and the temperature in the furnace is rapidly lowered to improve the throughput. Can be made.
  • FIG. 6 is an enlarged view of a part of the main components shown in FIG. 5. It is an expanded view of the heat insulation structure in the substrate processing apparatus which concerns on embodiment of this invention.
  • the substrate processing apparatus is configured as a batch type vertical apparatus for performing a film forming process in an IC manufacturing method.
  • a substrate processing apparatus 10 shown in FIG. 1 includes a supported process tube 11 as a vertical reaction tube.
  • the reaction tube 11 is an outer tube that is arranged concentrically with each other. It is comprised from the tube 12 and the inner tube 13 as an inner collar. Quartz (SiO 2) is used for the outer tube 12 and is integrally formed into a cylindrical shape with the upper end closed and the lower end opened.
  • the inner collar 13 is formed in a cylindrical shape with both upper and lower ends opened.
  • a cylindrical hollow portion of the inner rod 13 forms a processing chamber 14 into which a boat 31 described later is carried, and a lower end opening of the inner rod 13 constitutes a furnace port 15 for taking in and out the boat 31.
  • the boat 31 is configured to hold a plurality of wafers 1 (hereinafter also referred to as “substrates”) in a long aligned state. Therefore, the inner diameter of the inner collar 13 is set to be larger than the maximum outer diameter (for example, a diameter of 300 mm) of the substrate 1 to be handled.
  • the lower end portion between the outer tube 12 and the inner flange 13 is hermetically sealed by a manifold 16 as a furnace port flange portion constructed in a substantially cylindrical shape.
  • the manifold 16 is detachably attached to the outer tube 12 and the inner rod 13 for exchanging the outer tube 12 and the inner rod 13, respectively. Since the manifold 16 is supported by the housing 2 of the substrate processing apparatus 10, the reaction tube 11 is installed vertically.
  • the inner tube 13 may be omitted as the reaction tube 11 in the figure.
  • the exhaust passage 17 is formed in a circular ring shape having a constant cross-sectional shape by a gap between the outer tube 12 and the inner flange 13. As shown in FIG. 1, one end of an exhaust pipe 18 is connected to the upper portion of the side wall of the manifold 16, and the exhaust pipe 18 communicates with the lowermost end portion of the exhaust path 17.
  • An exhaust device 19 controlled by a pressure controller 21 is connected to the other end of the exhaust pipe 18, and a pressure sensor 20 is connected to the exhaust pipe 18.
  • the pressure controller 21 is configured to feedback control the exhaust device 19 based on the measurement result from the pressure sensor 20.
  • a gas introduction pipe 22 is disposed below the manifold 16 so as to communicate with the furnace port 15 of the inner casing 13.
  • the gas introduction pipe 22 includes a raw material gas supply device and an inert gas supply device (hereinafter referred to as a gas supply device). 23) is connected.
  • the gas supply device 23 is configured to be controlled by a gas flow rate controller 24.
  • the gas introduced from the gas introduction pipe 22 into the furnace port 15 flows through the processing chamber 14 of the inner casing 13, passes through the exhaust passage 17, and is exhausted by the exhaust pipe 18.
  • a seal cap 25 serving as a lid for closing the lower end opening is in contact with the manifold 16 from the lower side in the vertical direction.
  • the lid body 25 is constructed in a disk shape substantially equal to the outer diameter of the manifold 16 and is configured to be raised and lowered in the vertical direction by a boat elevator 26 installed in the standby chamber 3 of the housing 2.
  • the boat elevator 26 is configured by a motor-driven feed screw shaft device and a bellows, and the motor 27 of the boat elevator 26 is configured to be controlled by a drive controller 28.
  • a rotation shaft 30 is disposed on the center line of the lid 25 and is rotatably supported.
  • the rotation shaft 30 is configured to be rotationally driven by a motor 29 controlled by a drive controller 28.
  • a boat 31 is vertically supported on the upper end of the rotating shaft 30.
  • the boat 31 is provided with a pair of upper and lower end plates 32 and 33 and three holding members 34 vertically installed between the end plates 32 and 33, and a plurality of holding grooves 35 are longitudinally formed in the three holding members 34. Engraved at equal intervals in the direction.
  • the holding grooves 35, 35, 35, which are carved in the same step in the three holding members 34, are opened to face each other.
  • the boat 31 inserts the substrate 1 between the holding grooves 35 of the same stage of the three holding members 34 so that the plurality of substrates 1 are held in a state where they are aligned horizontally and aligned with each other. It has become.
  • a heat insulating cap portion 36 is disposed between the boat 31 and the rotating shaft 30.
  • the rotary shaft 30 is configured so that the lower end of the boat 31 is separated from the position of the furnace port 15 by an appropriate distance by supporting the boat 31 in a state where it is lifted from the upper surface of the lid 25.
  • the heat insulating cap part 36 insulates the vicinity of the furnace port 15.
  • the heater unit 40 as a vertically installed heating device is concentrically arranged outside the reaction tube 11 and is installed in a state supported by the casing 2.
  • the heater unit 40 includes a case 41.
  • the case 41 is made of stainless steel (SUS) and is formed in a cylindrical shape, preferably a cylindrical shape with the upper end closed and the lower end opened.
  • the inner diameter and the total length of the case 41 are set larger than the outer diameter and the total length of the outer tube 12.
  • the plurality of control zones are divided into seven control zones U1, U2, CU, C, CL, L1, and L2 from the upper end side to the lower end side of the heater unit 40.
  • a heat insulating structure 42 according to an embodiment of the present invention is installed in the case 41.
  • the heat insulating structure 42 according to the present embodiment is formed in a cylindrical shape, preferably a cylindrical shape, and the side wall 43 of the cylindrical body is formed in a multi-layer structure. That is, the heat insulating structure 42 includes a side wall outer layer (hereinafter also referred to as an outer layer) 45 disposed outside the side wall portion 43 and a side wall inner layer (hereinafter also referred to as an inner layer) 44 disposed inside the side wall portion.
  • a partition portion 105 that separates the side wall portion 43 into a plurality of zones (regions) in the vertical direction between the outer layer 45 and the inner layer 44, and an annular duct provided between the partition portion adjacent to the partition portion And an annular buffer 106 as a configured buffer unit.
  • a check damper 104 as a diffusion preventing unit is provided in each zone.
  • the cooling air 90 is configured to be supplied to the buffer unit 106 via the gas introduction path 107 by opening and closing the back diffusion preventing body 104a.
  • the back diffusion preventing body 104a serves as a lid so that the atmosphere in the internal space (hereinafter also referred to as space) 75 does not flow backward. You may comprise so that the pressure which this back diffusion prevention body 104a opens may be changed according to a zone.
  • a heat insulating cloth 111 as a blanket that absorbs the thermal expansion of the metal is provided between the outer peripheral surface of the outer layer 45 and the inner peripheral surface of the case 41.
  • the cooling air 90 supplied to the buffer unit 106 flows through a gas supply channel 108 provided in an inner layer 44 (not shown in FIG. 2), and an opening as a part of a supply path including the gas supply channel 108.
  • the cooling air 90 is supplied to the space 75 from the opening hole 110 as a part.
  • a ceiling wall portion 80 as a ceiling portion is placed on the upper end side of the side wall portion 43 of the heat insulating structure 42 so as to close the space 75.
  • An exhaust hole 81 as a part of an exhaust path for exhausting the atmosphere of the space 75 is formed in the ceiling wall portion 80 in an annular shape, and a lower end that is an upstream end of the exhaust hole 81 communicates with the inner space 75.
  • the downstream end of the exhaust hole 81 is connected to the exhaust duct 82.
  • the boat 31 holding the group of substrates 1 is lifted by the boat elevator 26 so that the lid body 25 is lifted. It is carried into the processing chamber 14 of the inner casing 13 (boat loading). The lid 25 that has reached the upper limit is pressed against the manifold 16 so that the inside of the reaction tube 11 is sealed. The boat 31 is placed in the processing chamber 14 while being supported by the lid body 25.
  • the temperature controller 64 performs sequence control so that the inside of the reaction tube 11 is heated to the target temperature by the heating element 56.
  • the error between the actual temperature rise inside the reaction tube 11 and the target temperature for sequence control of the temperature controller 64 is corrected by feedback control based on the measurement result of the thermocouple 65. Further, the boat 31 is rotated by the motor 29.
  • the raw material gas is introduced into the processing chamber 14 from the gas introduction tube 22 by the gas supply device 23.
  • the raw material gas introduced by the gas introduction pipe 22 flows through the processing chamber 14 of the inner casing 13, passes through the exhaust passage 17, and is exhausted by the exhaust pipe 18.
  • a predetermined film is formed on the substrate 1 by a thermal CVD reaction caused by contact of the source gas with the substrate 1 heated to a predetermined processing temperature.
  • a purge gas such as nitrogen gas is introduced into the reaction tube 11 from the gas introduction tube 22.
  • the cooling air 90 as the cooling gas is supplied from the intake pipe 101 to the gas introduction path 107 through the diffusion prevention unit 104.
  • the supplied cooling air 90 is temporarily stored in the buffer unit 106 and blown out from the plurality of openings 110 to the space 75 through the gas supply channel 108.
  • the cooling air 90 blown out from the opening 110 into the space 75 is exhausted through the exhaust hole 81 and the exhaust duct 82.
  • the cooling air 90 can be used as the cooling gas.
  • an inert gas such as nitrogen gas may be used as the cooling gas in order to further enhance the cooling effect or to prevent the heating element 56 from being corroded at high temperatures due to impurities in the air.
  • the boat 31 supported by the lid body 25 is lowered by the boat elevator 26 to be unloaded from the processing chamber 14 (boat unloading).
  • the film forming process for the substrate 1 is performed by the substrate processing apparatus 10 by repeating the film forming process described above.
  • a control computer 200 as a control unit includes a computer main body 203 including a CPU (Central Processing Unit) 201 and a memory 202, a communication IF (Interface) 204 as a communication unit, and a storage unit.
  • the CPU 201 constitutes the center of the operation unit, executes a control program stored in the storage device 205, and executes a recipe (for example, a process recipe) recorded in the storage device 205 in accordance with an instruction from the operation unit 206.
  • a recipe for example, a process recipe
  • the process recipe includes temperature control from step S1 to step S6 described later shown in FIG.
  • a ROM Read Only Memory
  • EEPROM Electrically Erasable Programmable Read Only Memory
  • flash memory a hard disk, and the like
  • a RAM Random Access Memory
  • the communication unit 204 is electrically connected to the pressure controller 21, the gas flow rate controller 24, the drive controller 28, and the temperature controller 64 (these may be collectively referred to as a sub-controller), and exchanges data related to the operation of each component. Can do. Further, it is also electrically connected to a valve control unit 300 described later, and can exchange data for controlling the multi-cooling unit.
  • control computer 200 has been described as an example.
  • the above-described processing can also be executed by installing the program from a recording medium 207 such as a CDROM or USB storing a program for executing the above-described processing in a general-purpose computer.
  • a communication IF 204 such as a communication line, a communication network, or a communication system may be used.
  • the program may be posted on a bulletin board of a communication network and provided by being superimposed on a carrier wave via the network.
  • the above-described processing can be executed by starting the program thus provided and executing it in the same manner as other application programs under the control of an OS (Operating System).
  • OS Operating System
  • Reference numerals S1 to S6 shown in FIG. 4 indicate that steps S1 to S6 of FIG. 3 are performed.
  • Step S1 is a process for stabilizing the temperature in the furnace at a relatively low temperature T0.
  • step S ⁇ b> 1 the substrate 18 has not yet been inserted into the reaction tube 11.
  • Step S2 is a process of inserting the substrate 1 held in the boat 31 into the reaction tube 11. Since the temperature of the substrate 1 is lower than the temperature T0 in the reaction tube 11 at this time, as a result of inserting the substrate 1 into the reaction tube 11, the temperature in the reaction tube 11 temporarily becomes lower than T0. The temperature in the reaction tube 11 is stabilized again at the temperature T0 after some time by the temperature controller 64 or the like. For example, when the temperature T0 is room temperature, this step may be omitted and is not an essential process.
  • Step S3 is a process of gradually increasing the temperature in the reaction tube 11 from the temperature T0 to the target temperature T1 for performing the film forming process on the substrate 1.
  • Step S4 is a process of stabilizing the temperature in the reaction tube 11 at the target temperature T1 in order to perform the film forming process on the substrate 1.
  • Step S5 is a process of gradually lowering the temperature in the reaction tube 11 from the temperature T1 to the relatively low temperature T0 again after the film formation process is completed.
  • the cooling air 90 is supplied from the intake pipe 101 to the gas introduction path 107 through the diffusion prevention unit 104, and the process of uniformly cooling the reaction pipe 11, the heater unit 40, and the like in each zone is performed. That is, a cooling process by a cooling unit described later is performed.
  • the temperature T0 may be room temperature.
  • Step S6 is a process of pulling out the substrate 1 on which the film formation process has been performed from the reaction tube 11 together with the boat 31.
  • steps S1 to S6 After obtaining a stable state in which the temperature in the reaction tube 11 is within a predetermined minute temperature range with respect to the target temperature and the state continues for a predetermined time, Advance to the next step.
  • steps S1, S2, S5, S6, etc. it is possible to shift to the next step without obtaining a stable state. Has been done.
  • FIG. 5 is an illustrative example for explaining a cooling unit (cooling device) 100 as a multi-cooling unit in the present embodiment.
  • the outer tube 12 and the inner rod 13 are omitted, and the reaction tube 11 is shown as one configuration, and the configuration relating to the heating device 40 is omitted.
  • the cooling device 100 includes a heat insulating structure 42 having a plurality of zones (U1, U2, CU, C, CL, L1, L2) in the vertical direction, and a reaction tube 11 for each zone.
  • a check damper 104 as a diffusion prevention unit for preventing back diffusion of the atmosphere from the body 42 side.
  • the ceiling wall portion 80 including the exhaust hole 81 and the exhaust duct 82 for exhausting the atmosphere from the space 75 may be configured as the cooling device 100.
  • the cooling device 100 includes an intake pipe 101 that supplies cooling air 90 that cools the reaction pipe 11 for each of a plurality of zones, a control valve 102 that is provided in the intake pipe 101, and an intake air that is provided for each zone.
  • the buffer unit 106 communicated with the pipe 101 and temporarily stores the gas supplied from the intake pipe 101, and the cooling air 90 stored in the buffer unit 106 is reacted via the gas supply channel 108 provided in the inner layer 44.
  • the cross-sectional area (or pipe diameter) between the zones of the intake pipe 101 is determined according to the ratio of the length in the height direction of each zone. As a result, the air flow rate between the zones is made uniform.
  • the cross-sectional area of the intake pipe 101 is configured to be larger than the total cross-sectional area of the opening 110.
  • the flow path cross-sectional area of the buffer unit 106 is configured to be larger than the total cross-sectional area of the opening 110.
  • the cooling air 90 once accumulated in the buffer unit 106 via the gas supply channel 108 is evenly distributed in the space 75. Can blow out.
  • the reaction pipe 11 is opened from the opening hole 110.
  • the flow rate and flow rate of the gas ejected toward the same can be made the same. Accordingly, the reaction tubes 11 facing the respective zones from the almost same height as the uppermost area AR in which the product substrate placed on the boat 31 is located to the lowermost area AR in which the product substrate is located are uniformly distributed by the cooling air 90. To be cooled. That is, in the area AR, it is possible to cool evenly in the zone and between the zones.
  • the diffusion prevention unit 104 since the atmosphere of the space 75 is exhausted from the upper exhaust hole 81, the diffusion prevention unit 104 has a lower side of the buffer unit 106 provided in each zone so that the cooling air 90 can be efficiently accumulated in the buffer unit 106. It is comprised so that it may communicate with.
  • the intake pipe 101 is configured to be provided with a throttle portion 103 as an orifice for suppressing the flow rate of the cooling air 90 ejected from the opening hole 110.
  • the aperture 103 is provided for each zone as necessary. In FIG. 5, it is provided on the downstream side of the control valve 102, but is not limited to this form, and may be provided on the upstream side of the control valve 102.
  • the cooling air 90 introduced into each zone is the same, but in order to suppress the cooling capacity of a predetermined zone
  • the throttle portion 103 is provided in the case where the flow rate and flow velocity of the cooling air 90 are adjusted.
  • control valve 300 is configured to be able to adjust the opening degree of the control valve 102 based on the set value from the control unit 200 and based on the data from the temperature controller 64 and the thermocouple 65.
  • the control valve 102 can change the flow rate and flow velocity of the cooling air 90 introduced into each zone by adjusting the opening of the valve by the control valve 300 according to the components in the reaction tube 101.
  • the cooling capacity of each zone can be adjusted by the opening degree of the control valve 102, so that variations in the exhaust capacity of the customer facility at the time of rapid cooling, variations in individual parts, and differences between devices caused by installation in the equipment are reduced. can do.
  • the heat insulating structure 42 used in the heating device 40 having a plurality of control zones (U1, U2, CU, C, CL, L1, L2 in this embodiment) has a side wall portion 43 formed in a cylindrical shape.
  • the side wall 43 is formed in a multi-layer structure including an inner layer 44 and an outer layer 45.
  • the heat insulating structure 42 includes a partition 105 that separates a cylindrical space between the inner layer 44 and the outer layer 45 into a plurality of zones (U1, U2, CU, C, CL, L1, L2) in the vertical direction; It is a cylindrical space between the inner layer 44 and the outer layer 45, and is formed on the outer side of the plurality of layers of the side wall portion 43 for each zone, and the buffer portion 106 formed by the space between the partition portions 105 adjacent in the vertical direction.
  • the buffer unit 106 Provided in the outer layer 45 arranged and communicated with the buffer unit 106 and provided in the inner layer 44 arranged inside the plurality of layers of the side wall 43 for each zone and communicated with the buffer unit 106.
  • Part 110 and It is further comprising configure.
  • the partition 105 is arranged so that the number of control zones matches the number of zones.
  • the number of control zones and the number of zones are arbitrarily set. However, by making the number of control zones the same as the number of zones, continuous control of heating and cooling becomes possible, and the temperature recovery time at the time of raising and lowering temperature can be shortened.
  • FIG. 6 is an enlarged view of a connection state between the heat insulating structure 42 and the diffusion preventing unit 104 shown in FIG.
  • the CL zone shown in FIG. 5 is enlarged.
  • the gas supply channel 108 and the opening 110 provided in the inner layer 44 are omitted.
  • a partition portion 105 is provided between the outer layer 45 and the inner layer 44, and a buffer portion 106 is provided in the space between the partition portions 105.
  • a diffusion prevention unit 104 is provided below the buffer unit 106 via a gas introduction path 107.
  • a heat insulating cloth 111 for absorbing thermal expansion is provided between the case 41 and the outer layer 45.
  • the diameter of the gas introduction path 107 shown in FIG. 6 is configured to be larger than the sum of the cross-sectional areas of the plurality of openings 110. Since the material of the diffusion prevention unit 104 and the back diffusion prevention body 104a is SUS, it is connected to a heat insulating material used for the heater unit 40, and is configured in consideration of heat resistance.
  • the cooling air 90 is once stored in the buffer unit 106 in a state where the back diffusion preventing body 104a is opened, and is supplied to the space 75 via a gas supply channel 108 (not shown).
  • the reverse diffusion prevention body 104a is closed to prevent convection between the intake pipe 101 and the heat insulating structure 42.
  • the gas introduction path 107 is formed so as to communicate with the lower side of the buffer unit 106, and the opening 110 is provided so as to avoid a position facing the gas introduction path 107.
  • the supplied cooling air 90 is not directly introduced into the space 75 from the opening 110 through the annular buffer 106, and the cooling air 90 supplied from the gas introduction path 107 is temporarily stored in the buffer unit 106. It is configured as follows.
  • An exhaust hole 81 and an exhaust duct 82 are provided on the upper side of the reaction tube 11. Therefore, the position of the gas introduction path 107 is arranged at a low position in each zone, and the opening 110 is not provided in the portion facing the gas introduction path 107, and the cooling air 90 is supplied to the buffer section 106. So that the supply pressures related to the openings 110 are the same. Accordingly, the cooling air 90 having the same flow rate and the same flow velocity is blown out from each opening 110 provided in the buffer unit 106.
  • the flow path cross-sectional area of the intake pipe 101 and the flow path cross-sectional area of the buffer unit 106 in each zone are made larger than the sum of the flow path cross-sectional areas of the openings 110. Accordingly, the cooling air 90 introduced by opening the diffusion preventing body 104a is easily stored in the buffer unit 106, and the cooling air 90 is supplied from the opening 110 at the same flow rate and the same flow rate.
  • FIG. 7 is a development view of the inner layer 44.
  • the partition 105 is separated into a plurality of zones (U1, U2, CU, C, CL, L1, L2), and the opening 110 is in the vertical direction (height direction).
  • the opening 110 is in the vertical direction (height direction).
  • a plurality of openings 110 are arranged vertically in each zone, and a plurality of openings 110 are arranged substantially evenly in the horizontal direction.
  • the number of openings 110 provided in the buffer unit 106 is determined according to the vertical length of each zone, and the openings 110 are provided substantially equally in the circumferential direction in each stage. It has been.
  • Each zone has a plurality of areas (A, B, C, D, E, F, G, H, I, K, and L) in the circumferential direction, and the height within each area is within one zone. Zigzag arranged in the direction.
  • the opening part 110 is arrange
  • the openings 110 are provided so as to avoid the position where the gas introduction path 107 is provided. That is, the reason why the opening 110 is not provided in the portion corresponding to the region K is not provided in order to avoid the influence of the cooling air 90 supplied from the intake pipe 101. However, the opening 110 can be provided at a position that does not face the gas introduction path 107. Further, the cooling air 90 blown out from the opening 110 is arranged so as to be blown away from the heating element 56. Further, the thermocouple 65 is covered with a windbreak block 112 so as not to be directly affected by the cooling air 90 blown out from the opening 110 but also from being influenced by the cooling air 90. In FIG. 7, the size of the opening 110 is different, but is a schematic diagram. The opening cross-sectional area of each opening 110 is formed with substantially the same size.
  • the openings 110 are regularly arranged, by supplying the cooling air 90 in proportion to the length in the height direction of the zones to the intake pipe 101, the same flow rate and the flow rate from the openings 110 in each zone.
  • the cooling air 90 having the same flow rate can be supplied toward the reaction tube 11.
  • it can adjust so that the flow volume and flow velocity of the same cooling air 90 may be supplied from the opening part 110 also between each zone.
  • the reaction tube 11 provided at a position facing each zone can be efficiently cooled.
  • the temperature deviation can be reduced within and between zones during rapid cooling (for example, the above-described temperature drop step S5). Can do.
  • the U1 zone and the L2 zone have the smallest channel cross-sectional area, and the C zone has the largest channel cross-sectional area.
  • eleven openings 110 are arranged in the circumferential direction of each zone (U1, U2, CU, C, CL, L1, L2).
  • the U1 zone and the L2 zone have two openings 110 in the height direction
  • the C zone has four openings 110 in the height direction
  • the remaining U2 zone, CU zone, CL zone, and L1 zone are Each of the three openings is provided in the height direction.
  • the U1 zone and the L2 zone are each provided with 22 openings 110, the C zone is provided with 44 openings 110, and the remaining zones are provided with 33 openings 110.
  • the cooling air 90 having the determined flow rate is introduced into the intake pipe 101 of each zone, the cooling air 90 introduced by opening the diffusion prevention body 104a is accumulated in the buffer unit 106 and is stored in each opening 110.
  • the supply pressure is configured to be the same. Therefore, since the cooling air 90 having the same flow rate and flow velocity can be supplied from the opening 110 through the gas supply channel 108 in all zones and between all zones, the reaction tube 11 can be uniformly cooled.
  • the flow rate of the cooling air 90 is preferably a flow rate that can be adjusted by the control valve 102. Thereby, the flow volume of the cooling air 90 introduced into each zone more precisely can be controlled.
  • the cooling unit 100 is comprised so that the supply pressure concerning each opening part 110 may become the same in each zone.
  • the cooling air 90 is supplied from the openings 110 at the same flow rate and the same flow velocity.
  • the temperature recovery time and the in-plane temperature uniformity of the substrate are improved, and the rapid temperature raising capability is improved. Further, since the temperature deviation at the time of rapid cooling can be made substantially uniform in each zone, the temperature uniformity between the substrates is improved.
  • FIG. 8 shows a table comparing the jetting air flow rate (flow rate) of the cooling air 90 when jetted from the respective openings 110 in the CL zone shown in FIG.
  • the circumferential axis is the area (A, B, C, D, E, F, G, H, I, K, L)
  • the lower stage belonging to the area close to the intake pipe 101 is compared with the upper stage belonging to the far area, and the opening It was confirmed whether the flow rates supplied from the unit 110 were substantially the same.
  • 8A shows each area of the upper stage shown in FIG. 7 when 1 m 3 / min, 0.1 m 3 / min, and 0.01 m 3 / min are respectively supplied to the intake pipe 101 provided in the CL zone shown in FIG.
  • FIG. I shows the flow rate ratio (unit:%) of the cooling air 90 ejected from each opening 110.
  • FIG. 9 shows a table comparing the jet air speed (flow velocity) of the cooling air 90 when jetted from the respective openings 110 in the CL zone shown in FIG.
  • the temperature is the result of measuring the flow velocity of the opening 110 when cooling air 90 of 2.5 m 3 / min is supplied to the intake pipe 101 in the CL zone at room temperature.
  • the flow velocity is converged in a range of 9 ⁇ 1 mm / sec in each area, and the speed of ejection from each opening hole 110 can be made substantially the same.
  • FIG. 10A is a model of a state where one half of the CL zone is divided into areas 1 to 6.
  • an opening 110 is provided in each area, and the gas supplied to the intake pipe 101 is once stored in the buffer unit 106, passes through the gas supply channel 108, and jets the gas from the opening 110.
  • FIG. 10B shows that the heater unit 40 is heated at a constant temperature of 750 ° C. when the cooling unit 100 in the present embodiment is not used, and N2 gas is supplied at 1 m 3 / min to the intake pipe 101 provided in the CL zone.
  • the average temperature in each area when one side half of the UL zone is divided into areas 1 to 6 is shown. It is converged at about 600 ° C., and the reaction tube 11 corresponding to the CL zone can be uniformly cooled in the circumferential direction.
  • FIG. 11 shows the zones (U 1, U 2, CU, C, CL, L 1, etc.) shown in FIG. 7 while heating the heater unit 40 under conditions that are constant at 750 ° C. when the cooling unit 100 in this embodiment is not used.
  • L2) is 1 m3 / min in the intake pipe 101 provided in the U1 zone and the L2 zone, 2 m3 / min in the intake pipe 101 provided in the C zone, and 1.5 m3 / min in the intake pipe 101 provided in the other zones. It is the result of measuring the temperature in each zone when the flow rate of min is supplied.
  • each zone converges around 600 ° C.
  • the cooling unit of this embodiment it can cool equally in the height direction of the reaction tube 101.
  • FIG. 12A shows a graph when cooling from 800 ° C. to 100 ° C. using a conventional heater unit.
  • the horizontal axis is time (unit: minutes)
  • the left side of the vertical axis is temperature (unit: ° C)
  • the right side of the vertical axis is temperature deviation (unit: ° C).
  • Line a represents the transition of the temperature detected by the temperature detector (thermocouple) provided in the CL zone in each control zone, and each control zone (U, CU) when line b is cooled from 800 ° C to 100 ° C. , C, CL, L).
  • the maximum value of the temperature deviation is 27.5 ° C., and it has been difficult for the conventional method not using the cooling function to further reduce the temperature deviation between the zones.
  • FIG. 12A shows a graph when cooling from 800 ° C. to 100 ° C. using a conventional heater unit.
  • the horizontal axis is time (unit: minutes)
  • the left side of the vertical axis is temperature (unit:
  • FIG. 12B shows a graph when the temperature is lowered from 800 ° C. to 200 ° C. using the cooling unit 100 in the present embodiment. Similar to FIG. 12A, the horizontal axis represents time (unit: minutes), the left side of the vertical axis represents temperature (unit: ° C.), and the right side of the vertical axis represents temperature deviation (unit: ° C.).
  • FIG. 12B also shows the transition of the temperature detected by the temperature detector (thermocouple) provided in the CL zone.
  • the A line shows the temperature transition when the opening of the control valve 102 is fixed, and the B line is the control. The temperature transition when the temperature is lowered while adjusting the opening of the valve 102 is shown.
  • the temperature deviation between 800 degreeC and 200 degreeC was calculated, and each was compared.
  • the C line is 16.2 ° C. and the D line is 5.9 ° C., which can be much smaller than the temperature deviation at the time of the conventional temperature drop shown in FIG. 12A.
  • the cooling unit 100 in the present embodiment the temperature can be lowered in about 30 minutes, thereby improving the throughput.
  • the difference from the set temperature drop rate can be reduced.
  • the cooling capacity of each zone can be adjusted, and the temperature change of the reaction tube 11 can be made uniform in each zone. Therefore, since the temperature deviation is smaller than when the opening degree of the control valve 102 is fixed, the temperature recovery time can be further shortened.
  • the temperature drop characteristic can be improved as compared with the conventional cooling unit. Furthermore, by adjusting the opening degree of the control valve 102 and adjusting the cooling capacity of each zone and lowering the temperature, the temperature deviation between the zones can be made extremely small, and the temperature drop characteristic can be greatly improved. it can.
  • an intake pipe that is provided for each zone and supplies a gas for cooling the reaction pipe
  • a control valve that is provided in the intake pipe and adjusts the flow rate of the gas, and is supplied from the intake pipe
  • a buffer part for temporarily storing the generated gas
  • openings provided at equal intervals in the circumferential direction in the zone so as to blow out the gas stored in the buffer part toward the reaction tube
  • the intake pipe is further provided with a diffusion prevention unit for preventing the back diffusion of the atmosphere from the furnace, and the diffusion prevention unit communicates with the lower side of the buffer unit. Since it is comprised, the gas supplied from the intake pipe can be temporarily stored in the buffer part. In addition, since the back diffusion prevention unit is provided, back diffusion is prevented when the cooling gas is not used, so that the influence of heat by the heating device 40 can be suppressed.
  • the flow path cross-sectional area of the intake pipe provided for each zone and the flow path cross-sectional area of the buffer portion are configured to be larger than the sum of the cross-sectional areas of the opening holes provided for each zone. Therefore, by adjusting the flow rate of the cooling gas supplied to the intake pipe provided in each zone, the flow rate and flow velocity of the cooling gas ejected from each opening hole can be made uniform in the zone. Furthermore, by making the gas supply pressure substantially the same in each opening hole, it is possible to equalize not only within the zone but also between the zones, so that the reaction tubes can be cooled uniformly.
  • the cooling unit in the present embodiment By using the cooling unit in the present embodiment to cool down when the temperature is lowered (during rapid cooling), the time to drop to a predetermined temperature is shortened, and within the zones and zones during the temperature fall (during rapid cooling) The temperature deviation between them can be reduced. Furthermore, by cooling the temperature while adjusting the opening of the control valve for adjusting the gas flow rate, the cooling capacity of each zone can be adjusted, and the temperature change of the reaction tube can be made uniform in each zone. Accordingly, the temperature deviation can be made smaller than when the opening degree of the control valve is fixed.
  • the cooling unit in the present embodiment By using the cooling unit in the present embodiment and cooling when the temperature is lowered (during rapid cooling), the time to drop to a predetermined temperature is shortened, and the set temperature when the temperature is lowered (during rapid cooling) The difference from the descent rate can be reduced.
  • the cooling capacity of each zone can be adjusted, so that the temperature change of the reaction tube can be made uniform in each zone. Therefore, the temperature recovery time can be further shortened compared to when the opening degree of the control valve is fixed.
  • the heat insulating structure in the present embodiment has a side wall portion formed in a cylindrical shape, the side wall portion is formed in a multi-layer structure, and the side wall portion is vertically separated into a plurality of regions.
  • the cooling air 90 is supplied to the uppermost U1 zone and the lowermost L2 zone among a plurality of zones toward a range outside the substrate processing region in the reaction tube 11.
  • the U1 zone is a space (ceiling space portion)
  • the L2 zone includes a heat insulating cap portion 36. Since these are heat insulating regions and are different from the product substrate region AR, in reality, there is a possibility that the cooling of the reaction tubes 11 facing the U1 zone and the L2 zone is not uniform.
  • a dummy wafer called a side dummy wafer used for temperature adjustment is placed on the boat 31.
  • the relationship will be described.
  • the configuration of the cooling unit 100 is basically the same. That is, only the differences from the first embodiment will be described with reference to FIG.
  • the heating object in the U1 zone is a space. Specifically, as shown in FIG. 5, this is a space called a ceiling space above the boat 31. In this space, when the reaction tube 11 is cooled, convection is likely to occur in the reaction tube 11 and heat in the space is likely to escape. For this reason, it is necessary to suppress the flow rate of the cooling air 90 blown to the U1 zone.
  • the cooling air 90 is configured to be exhausted from the upper side after contacting the reaction tube 11.
  • the cooling air 90 supplied from the zone other than the U1 zone toward the reaction tube 11 is exhausted from the upper side through the U1 zone. Accordingly, it is required to cool the reaction tube 11 evenly by suppressing the flow rate of the cooling air 90 supplied to the U1 zone.
  • the throttle portion 103 is provided in the intake pipe 101 provided in the U1 zone, and the flow rate of the cooling air 90 supplied from the opening hole 110 toward the reaction pipe 11 is smaller than in other zones.
  • the reaction tube 11 can be cooled equally between zones also by the influence of the heating target object of U1 zone, and the exhaust_gas
  • the object to be heated in the L2 zone is a heat insulator such as a heat insulating plate or a heat insulating cylinder.
  • a heat insulator such as a heat insulating plate or a heat insulating cylinder.
  • This is a region called a heat insulating region with respect to the substrate processing region AW.
  • the insulator having a larger heat capacity than that of the substrate 1 is cooled, it takes time to cool the insulator even if the reaction tube 11 is cooled. Therefore, the flow rate of the cooling air 90 blown to the L2 zone is increased. There is a need.
  • the cooling air 90 is configured to be exhausted from the upper side after contacting the reaction tube 11.
  • the cooling air 90 supplied toward the reaction tube 11 is exhausted from the upper side via the U1 zone, the L2 zone cannot be cooled by the cooling air 90 from zones other than the L2 zone. It is necessary to uniformly cool the reaction tube 11 by increasing the flow rate of the cooling air 90 supplied to the L2 zone.
  • the cooling air 90 supplied to the intake pipe 101 provided in the L2 zone is set to, for example, twice the flow rate.
  • the flow rate and flow rate of the cooling air 90 supplied from the opening hole 110 in the L2 zone toward the reaction tube 11 are increased. Accordingly, by promoting the cooling of the reaction tube 11 facing the L2 zone, the reaction tube 11 can be uniformly cooled between the zones as a result.
  • the heating target in the reaction tube 11 facing from the U2 zone to the L1 zone is based on the product substrate 1, and the U1 zone has a flow rate and flow velocity of the cooling air 90 ejected from the opening hole 110.
  • the flow rate and flow velocity of the cooling air 90 ejected from the opening hole 110 are doubled.
  • these flow rates and flow velocities are only the results in this embodiment and may be changed as appropriate.
  • the flow rate and flow velocity of the cooling air 90 ejected from the opening hole 110 are increased, and when the heat capacity of the heating object is small, the opening hole The flow rate and flow velocity of the cooling air 90 ejected from 110 may be reduced.
  • a fill dummy wafer is generally used where the product substrate 1 is missing.
  • the flow rate and flow velocity of the cooling air 90 ejected from the opening hole 110 may be controlled by adjusting the opening of the control valve 102 according to the number of fill dummy wafers.
  • the dummy wafer can be set to 0.7 to 0.8 or the like based on the product substrate 1.
  • the present invention can be applied not only to a semiconductor manufacturing apparatus but also to an apparatus for processing a glass substrate such as an LCD apparatus.
  • the present invention relates to a semiconductor manufacturing technique, and more particularly to a heat treatment technique for performing processing in a state in which a substrate to be processed is accommodated in a processing chamber and heated by a heating apparatus, for example, a semiconductor wafer on which a semiconductor integrated circuit device (semiconductor device) is fabricated.
  • a heating apparatus for example, a semiconductor wafer on which a semiconductor integrated circuit device (semiconductor device) is fabricated.
  • a substrate processing apparatus that is used for substrate processing equipment used for oxidation processing, diffusion processing, carrier activation after ion implantation, reflow for planarization, annealing, and thermal CVD reaction. Can do.
  • reaction tube 10 substrate processing apparatus 11 reaction tube 40 heater unit (heating apparatus) 100 cooling unit (cooling apparatus) 102 control valve (conductance valve) 110 opening (opening hole)

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Abstract

La présente invention concerne une configuration qui comprend : un tuyau d'admission qui est prévu pour chaque zone pour fournir un gaz afin de refroidir un tuyau de réaction ; une vanne de régulation avec laquelle le tuyau d'admission est prévu pour ajuster le volume d'écoulement du gaz ; une partie tampon dans laquelle le gaz fourni par le tuyau d'admission est temporairement accumulé ; et des parties d'ouverture qui sont disposées dans la zone à des intervalles réguliers dans une direction circonférentielle de façon à souffler le gaz accumulé dans la partie tampon vers le tuyau de réaction. Dans la configuration, le volume d'écoulement du gaz introduit dans le tuyau d'admission est réglé en fonction d'une proportion de longueur dans la direction verticale de la zone, ce qui permet d'ajuster le volume d'écoulement et la vitesse d'écoulement du gaz, qui est éjecté hors des parties d'ouverture vers le tuyau de réaction par ouverture ou fermeture de la vanne de régulation.
PCT/JP2016/086775 2016-12-09 2016-12-09 Dispositif de traitement de substrat, unité de refroidissement, et structure d'isolation thermique WO2018105113A1 (fr)

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PCT/JP2016/086775 WO2018105113A1 (fr) 2016-12-09 2016-12-09 Dispositif de traitement de substrat, unité de refroidissement, et structure d'isolation thermique
JP2018555424A JP6752291B2 (ja) 2016-12-09 2016-12-09 基板処理装置、クーリングユニット及び断熱構造体並びに半導体装置の製造方法
TW106138024A TWI669411B (zh) 2016-12-09 2017-11-03 Substrate processing apparatus, cooling unit, heat insulating structure, and method of manufacturing semiconductor device

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JP2019054232A (ja) * 2017-09-12 2019-04-04 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ クーリングユニット、断熱構造体及び基板処理装置、半導体装置の製造方法並びにプログラム
CN110739244A (zh) * 2018-07-20 2020-01-31 东京毅力科创株式会社 热处理装置和热处理方法
CN111223795A (zh) * 2018-11-27 2020-06-02 东京毅力科创株式会社 热处理装置和热处理方法
US11043402B2 (en) 2017-09-12 2021-06-22 Kokusai Electric Corporation Cooling unit, heat insulating structure, and substrate processing apparatus
KR20220015449A (ko) 2019-08-30 2022-02-08 가부시키가이샤 코쿠사이 엘렉트릭 반도체 장치의 제조 방법 및 제조 장치
KR20220015447A (ko) 2019-08-30 2022-02-08 가부시키가이샤 코쿠사이 엘렉트릭 반도체 장치의 제조 방법 및 제조 장치
WO2022070310A1 (fr) * 2020-09-30 2022-04-07 株式会社Kokusai Electric Dispositif de traitement de substrat, programme de commande de température, procédé de fabrication de dispositif à semi-conducteur et procédé de commande de température
US12085338B2 (en) 2019-06-12 2024-09-10 Kokusai Electric Corporation Heater, temperature control system, and processing apparatus
WO2025195466A1 (fr) * 2024-03-22 2025-09-25 南京原磊纳米材料有限公司 Dispositif de réaction de tranche

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JPH0982720A (ja) * 1995-09-14 1997-03-28 Tokyo Electron Ltd 縦型熱処理装置
JPH09190982A (ja) * 1996-01-11 1997-07-22 Toshiba Corp 半導体製造装置
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JP2019054232A (ja) * 2017-09-12 2019-04-04 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ クーリングユニット、断熱構造体及び基板処理装置、半導体装置の製造方法並びにプログラム
US11043402B2 (en) 2017-09-12 2021-06-22 Kokusai Electric Corporation Cooling unit, heat insulating structure, and substrate processing apparatus
CN110739244A (zh) * 2018-07-20 2020-01-31 东京毅力科创株式会社 热处理装置和热处理方法
CN110739244B (zh) * 2018-07-20 2024-05-24 东京毅力科创株式会社 热处理装置和热处理方法
CN111223795A (zh) * 2018-11-27 2020-06-02 东京毅力科创株式会社 热处理装置和热处理方法
US12085338B2 (en) 2019-06-12 2024-09-10 Kokusai Electric Corporation Heater, temperature control system, and processing apparatus
KR20220015449A (ko) 2019-08-30 2022-02-08 가부시키가이샤 코쿠사이 엘렉트릭 반도체 장치의 제조 방법 및 제조 장치
KR20220015447A (ko) 2019-08-30 2022-02-08 가부시키가이샤 코쿠사이 엘렉트릭 반도체 장치의 제조 방법 및 제조 장치
WO2022070310A1 (fr) * 2020-09-30 2022-04-07 株式会社Kokusai Electric Dispositif de traitement de substrat, programme de commande de température, procédé de fabrication de dispositif à semi-conducteur et procédé de commande de température
JPWO2022070310A1 (fr) * 2020-09-30 2022-04-07
JP7362940B2 (ja) 2020-09-30 2023-10-17 株式会社Kokusai Electric 基板処理装置、温度制御プログラム、半導体装置の製造方法及び温度制御方法
WO2025195466A1 (fr) * 2024-03-22 2025-09-25 南京原磊纳米材料有限公司 Dispositif de réaction de tranche

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JP6752291B2 (ja) 2020-09-09

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