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WO2018124048A1 - Dispositif d'imagerie, appareil de capture d'image et procédé d'imagerie - Google Patents

Dispositif d'imagerie, appareil de capture d'image et procédé d'imagerie Download PDF

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Publication number
WO2018124048A1
WO2018124048A1 PCT/JP2017/046592 JP2017046592W WO2018124048A1 WO 2018124048 A1 WO2018124048 A1 WO 2018124048A1 JP 2017046592 W JP2017046592 W JP 2017046592W WO 2018124048 A1 WO2018124048 A1 WO 2018124048A1
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WIPO (PCT)
Prior art keywords
imaging
voltage
period
predetermined range
image
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PCT/JP2017/046592
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English (en)
Japanese (ja)
Inventor
典巧 吉田
峯　忠己
Original Assignee
パナソニックＩｐマネジメント株式会社
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Publication of WO2018124048A1 publication Critical patent/WO2018124048A1/fr

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/53—Control of the integration time
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors

Definitions

  • the present invention relates to an imaging apparatus, a camera, and an imaging method for imaging an image.
  • Patent Document 1 An imaging apparatus that captures an image using an image sensor is known (see, for example, Patent Document 1).
  • Imaging devices that have various imaging effects are desired.
  • an object of the present disclosure to provide an imaging apparatus, a camera, and an imaging method that can realize imaging that exhibits various imaging effects as compared with the conventional art.
  • An imaging apparatus includes an imaging element that continuously captures a plurality of frame images, and a control unit that controls an exposure state of the imaging element, and the imaging element responds to the control. Thus, exposure is performed a plurality of times during the imaging period of one frame image.
  • a camera includes the imaging device and a lens that collects external light on the imaging device.
  • An imaging method is an imaging method performed by an imaging apparatus including an imaging element and a control unit that controls the imaging element, and the imaging element continuously captures a plurality of frame images.
  • a plurality of imaging devices are arranged during an imaging period of one frame image according to the control. Repeat exposure.
  • the imaging apparatus the camera, and the imaging method according to the present disclosure, it is possible to realize imaging capable of obtaining various imaging effects as compared with the conventional art.
  • FIG. 1 is a block diagram illustrating a configuration of a camera according to an embodiment.
  • FIG. 2 is a block diagram illustrating a configuration of the image sensor according to the embodiment.
  • FIG. 3A is a plan view of the photoelectric conversion element according to the embodiment.
  • FIG. 3B is a side view of the photoelectric conversion element according to the embodiment.
  • FIG. 4 is a block diagram illustrating a configuration of the pixel circuit according to the embodiment.
  • FIG. 5A is a timing diagram of the frame switching signal.
  • FIG. 5B is a timing diagram illustrating an operation of the image sensor according to the embodiment.
  • FIG. 5C is a timing chart of the exposure state output pulse.
  • FIG. 5D is a timing diagram illustrating a state of the photoelectric conversion element according to the embodiment.
  • FIG. 6 is a flowchart of the multiple exposure imaging process according to the embodiment.
  • FIG. 7A is a perspective view of a digital still camera according to a modification.
  • FIG. 7B is
  • FIG. 1 is a block diagram showing a configuration of a camera 200 according to the embodiment.
  • the camera 200 includes a lens barrel 230 and the imaging device 1.
  • the lens barrel 230 includes an optical system 210 and a lens driving unit 220.
  • the optical system 210 is composed of one or more lenses that collect external light on the imaging device 10 of the imaging device 1.
  • the optical system 210 includes a zoom lens 211, a camera shake correction lens 212, a focus lens 213, and a diaphragm 214.
  • the subject image can be enlarged or reduced by moving the zoom lens 211 along the optical axis 210A.
  • the focus of the subject image can be adjusted by moving the focus lens 213 along the optical axis 210A.
  • the camera shake correction lens 212 is movable in a plane perpendicular to the optical axis 210A of the optical system 210. By moving the camera shake correction lens 212 in a direction to cancel the camera 200 shake, the influence of the camera 200 shake on the captured image can be reduced.
  • the diaphragm 214 has an opening 214A located on the optical axis 210A, and adjusts the size of the opening 214A according to the setting of the user or automatically to adjust the amount of transmitted light.
  • the lens driving unit 220 includes a zoom actuator that drives the zoom lens 211, a camera shake correction actuator that drives the camera shake correction lens 212, a focus actuator that drives the focus lens 213, and a diaphragm actuator that drives the diaphragm 214.
  • the lens driving unit 220 controls the zoom actuator, the focus actuator, the camera shake correction actuator, and the aperture actuator.
  • the imaging device 1 includes an imaging device 10, a control unit 20, an image processing unit 260, a memory 270, a card slot 290, an internal memory 340, an operation member 310, and a display monitor 320. .
  • the image sensor 10 continuously captures a plurality of frame images.
  • the image processing unit 260 performs various processes on the image data generated by the image sensor 10, generates image data to be displayed on the display monitor 320, and generates image data to be stored in the memory card 300. To do. For example, the image processing unit 260 performs various processes such as gamma correction and white balance correction on the image data generated by the image sensor 10. Further, the image processing unit 260 converts the image data generated by the image sensor 10 into H.264. It compresses by the compression format etc. based on H.264 standard or MPEG2 standard. For example, the image processing unit 260 is realized by a processor (not shown) executing a program stored in a memory (not shown).
  • the control unit 20 controls the exposure state in the image sensor 10.
  • the control unit 20 controls the entire camera 200.
  • the control unit 20 is realized by developing a program recorded in the internal memory 340 in the memory 270 that temporarily stores the program and executing a processor (not shown) in the control unit 20. .
  • the memory 270 also functions as a work memory for the image processing unit 360 and the control unit 20.
  • the memory 270 can be realized by, for example, a DRAM or an SRAM.
  • the card slot 390 holds the memory card 300 in a removable manner.
  • the card slot 290 can be mechanically and electrically connected to the memory card 300.
  • the memory card 300 includes a nonvolatile flash memory, a ferroelectric memory, and the like, and can store data such as an image file generated by the image processing unit 260.
  • the internal memory 340 is configured by a nonvolatile flash memory, a ferroelectric memory, or the like.
  • the internal memory 340 stores a control program for controlling the entire camera 200 and the like.
  • the operation member 310 is a generic term for a user interface that receives an operation from a user.
  • the operation member 310 includes, for example, a cross key that accepts an operation from the user, a determination button, and the like.
  • the display monitor 320 includes a screen 320A that can display an image indicated by the image data generated by the image sensor 10 and an image indicated by the image data read from the memory card 300.
  • the display monitor 320 can also display various menu screens for performing various settings of the camera 200 on the screen 320A.
  • a touch panel 320B is arranged on the screen 320A of the display monitor 320. The touch panel 320B can be touched by the user and accept various touch operations. The instruction indicated by the touch operation on the touch panel 320B is notified to the control unit 20 and various processes are performed.
  • the imaging element 10 exposes a plurality of times during the imaging period of one frame image under the control of the control unit 20.
  • the image sensor 10 will be described in more detail with reference to the drawings.
  • FIG. 2 is a block diagram showing the configuration of the image sensor 10.
  • the image sensor 10 includes a photoelectric conversion element 110, a pixel circuit array 120, a readout circuit 130, an output circuit 140, a row scanning circuit 150, a timing control circuit 160, and a voltage application circuit. 170.
  • FIG. 3A is a plan view of the photoelectric conversion element 110
  • FIG. 3B is a side view of the photoelectric conversion element 110.
  • the photoelectric conversion element 110 is in close contact with the thin-film photoelectric conversion member 111, the upper transparent electrode 112 that is in close contact with the upper surface of the photoelectric conversion member 111, and the lower surface of the photoelectric conversion member 111.
  • N ⁇ M lower pixel electrodes 113 arranged in a two-dimensional array of N rows and M columns (N and M are integers of 1 or more).
  • the photoelectric conversion member 111 generates light due to the internal photoelectric effect by receiving light in a state where a voltage of 0V and a first predetermined range not including the insensitive area is applied, and 0V and a voltage of the second predetermined range that is the insensitive area. Even if light is received in a state where is applied, charges due to the internal photoelectric effect are not generated.
  • the photoelectric conversion member 111 is an organic thin film having the above characteristics. That is, in this embodiment, the image pickup device 10 is an example of an organic CMOS image sensor that uses an organic thin film as a photoelectric conversion member.
  • the upper transparent electrode 112 is a transparent electrode that applies a voltage that generates a potential difference including 0 V to the lower surface over the entire upper surface of the photoelectric conversion member 111.
  • the lower pixel electrode 113 is an electrode arranged in a two-dimensional array of N rows and M columns so as to cover the entire lower surface of the photoelectric conversion member 111.
  • the lower pixel electrode 113 is formed in the vicinity of itself when a charge is generated on the upper surface of the photoelectric conversion member 111 so as to generate a positive potential difference with respect to the lower surface. Among the generated charges, positive charges are collected.
  • the photoelectric conversion element 110 configured as described above, when a voltage that causes a positive potential difference within a range in which the internal photoelectric effect is generated is applied to the upper surface of the photoelectric conversion member 111 with respect to the lower surface, the internal photoelectric effect due to light reception is applied.
  • Each of the lower pixel electrodes 113 collects the positive charges generated by the above.
  • the upper surface of the photoelectric conversion member 111 has substantially the same potential as the lower surface, even if it receives light, no charge is generated due to the internal photoelectric effect. There is no current collection.
  • a period in which a voltage causing a positive potential difference in a range in which the internal photoelectric effect occurs is applied to the upper surface of the photoelectric conversion member 111 as an exposure period.
  • a period in which a voltage in a range where the internal photoelectric effect does not occur is applied to the lower surface is referred to as a light shielding period.
  • the pixel circuit array 120 is a semiconductor device in which N ⁇ M pixel circuits 21 are arranged in a two-dimensional array of N rows and M columns, and the photoelectric conversion element 110 is arranged on the lower surface side of the photoelectric conversion element 110. Arranged in a superimposed manner.
  • each pixel circuit 21 is arranged so that the position of each pixel circuit 21 overlaps with the position of each lower pixel electrode 113 in a one-to-one correspondence when the imaging device 10 is viewed in plan. Has been.
  • FIG. 4 is a block diagram showing the configuration of the pixel circuit 21. As shown in FIG. 4
  • the pixel circuit 21 includes a reset transistor 22, an amplification transistor 23, a selection transistor 24, and a charge storage node 25.
  • the charge storage node 25 is connected to the lower pixel electrode 113 corresponding to the pixel circuit 21 to which the charge storage node 25 belongs, the source of the reset transistor 22, and the gate of the amplification transistor 23, and is collected by the connected lower pixel electrode 113. Accumulate positive charge.
  • the reset transistor 22 has a gate connected to the reset signal line 51, a drain supplied with a reset voltage VRST, and a source connected to the charge storage node 25.
  • the reset transistor 22 is turned on by a reset signal delivered from the row scanning circuit 150 (described later) via the reset signal line 51, thereby resetting (initializing) the amount of charge accumulated in the charge accumulation node 25. To do.
  • the charge storage node 25 is connected to the gate, the power supply voltage VDD is supplied to the drain, and the drain of the selection transistor 24 is connected to the source.
  • a voltage corresponding to the charge accumulated in the charge accumulation node 25 is applied to the gate of the amplification transistor 23.
  • the amplifying transistor 23 functions as a current source for supplying a current corresponding to the charge stored in the charge storage node 25 when the selection transistor 24 is in the ON state.
  • the selection signal line 52 is connected to the gate, the source of the amplification transistor 23 is connected to the drain, and the vertical signal line 32 is connected to the source.
  • the selection transistor 24 is turned on by a selection signal delivered from the row scanning circuit 150 (described later) via the selection signal line 52, thereby outputting a current flowing through the amplification transistor 23 to the vertical signal line 32.
  • the pixel circuit 21 reads the amount of charges accumulated in the charge accumulation node 25 in a non-destructive manner with the above configuration.
  • the row scanning circuit 150 has the following stored charge amount reset function and the following readout pixel circuit selection function.
  • the stored charge amount reset function is performed one by one from the row farthest to the readout circuit 130 (first row) to the row closest to the readout circuit 130 (Nth row).
  • a reset signal line for resetting positive charges accumulated in the charge accumulation nodes 25 in each pixel circuit 21 belonging to the corresponding row at a predetermined time t1 interval is connected to each pixel circuit 21 belonging to the relevant row. This is a function of delivering via 51.
  • the resetting of the charges accumulated in the charge accumulation nodes 25 of all the pixel circuits 21 included in the pixel circuit array 120 is sequentially executed in units of rows from the first row to the Nth row.
  • a period of N ⁇ t1 is required from the start of the reset for the pixel circuit 21 belonging to No. 1 to the completion of the reset for the pixel circuit 21 belonging to the Nth row.
  • the readout pixel circuit selection function turns on the selection transistor 24 in each of the pixel circuits 21 belonging to the corresponding row at predetermined time intervals t1 in order from the first row to the Nth row. This is a function for delivering a selection signal for selection via a selection signal line 52 connected to each of the pixel circuits 21 belonging to the corresponding row.
  • the reading of the charge amount accumulated in the charge accumulation nodes 25 of all the pixel circuits 21 included in the pixel circuit array 120 is sequentially executed in units of rows from the first row to the N-th row.
  • a period of N ⁇ t1 is required from the start of reading for the pixel circuit 21 belonging to the eye to the completion of reading for the pixel circuit 21 belonging to the Nth row.
  • the readout circuit 130 reads out the amount of charge accumulated in each of the pixel circuits 21 constituting the pixel circuit array 120.
  • the readout circuit 130 is configured to include M column readout circuits 31 corresponding to the M columns of the pixel circuit array 120, respectively.
  • the column readout circuit 31 includes a selection transistor 24 that is turned on by a selection signal via a vertical signal line 32 connected to each of the pixel circuits 21 belonging to the corresponding column (this pixel circuit 21). Is also referred to as “a pixel circuit 21 to be read”.), By detecting the amount of current flowing through the amplification transistor 23, the amount of charge accumulated in the charge accumulation node 25 of the pixel circuit 21 to be read is read. Then, a digital signal of K bits (K is a positive integer, for example, 8) indicating the amount of the read electric charge is output as a pixel value of the pixel circuit 21 to be read.
  • the output circuit 140 outputs the pixel value output from the column readout circuit 31 to the outside.
  • the voltage application circuit 170 applies a voltage to the photoelectric conversion member 111. More specifically, the voltage application circuit 170 controls the voltage applied to the upper transparent electrode 112 so that (1) the lower surface of the photoelectric conversion member 111 has a positive potential difference that causes the internal photoelectric effect.
  • the photoelectric conversion element 110 is set as an exposure period during the applied state, and (2) a potential difference that does not cause a positive potential difference that causes an internal photoelectric effect with respect to the lower surface (here) Then, by applying a predetermined second voltage that generates the same potential as the lower surface), the photoelectric conversion element 110 is set as a light shielding period during the applied state.
  • the timing control circuit 160 controls the operation timing of the row scanning circuit 150, the operation timing of the readout circuit 130, and the operation timing of the voltage application circuit 170. That is, the timing control circuit 160 controls the timing for executing the stored charge amount reset function and the timing for executing the readout pixel circuit selection function by the row scanning circuit 150, and is selected by the selection signal by the readout circuit 130. The timing at which the amount of charge accumulated in the charge accumulation node 25 of the pixel circuit 21 is read is controlled, the timing at which the voltage conversion circuit 110 sets the photoelectric conversion element 110 as the exposure period, and the photoelectric conversion element 110 as the light shielding period. Control the timing.
  • the control unit 20 has the following frame image continuous imaging function and the following exposure control function.
  • the frame image continuous imaging function is a function for causing the image sensor 10 to continuously capture frame images every predetermined frame period T1 (for example, 1/60 seconds). More specifically, by outputting a frame switching signal to the image sensor 10 every frame period T1, the image sensor 10 is caused to perform continuous imaging of the frame image.
  • FIG. 5A is a timing diagram of a frame switching signal output by the control unit 20.
  • control unit 20 outputs a frame switching signal to the image sensor 10 every frame period T1.
  • the timing control circuit 160 controls the operation timing of the row scanning circuit 150 and the operation timing of the readout circuit 130, thereby causing a frame start signal. Is read out from the charge storage nodes 25 for all the pixel circuits 21 constituting the pixel circuit array 120.
  • FIG. 5B is a timing chart showing the operation of the image sensor 10.
  • the reading of the amount of charge accumulated in the charge accumulation nodes 25 of all the pixel circuits 21 included in the pixel circuit array 120 is delayed by t1 in order from the first row to the Nth row. It is executed at the timing.
  • the image sensor 10 configures the pixel circuit array 120 at a timing delayed by ⁇ t after the timing control circuit 160 controls the operation timing of the row scanning circuit 150 to start reading the charge amount.
  • the resetting (initialization) of the amount of charge accumulated in the charge accumulation node 25 is started for all the pixel circuits 21 to be performed.
  • the reset of the charge amount accumulated in the charge accumulation nodes 25 of all the pixel circuits 21 included in the pixel circuit array 120 is delayed by t1 in order from the first row to the Nth row. It is executed at the timing.
  • control unit 20 Referring back to FIG. 1 again, the description of the control unit 20 will be continued.
  • the frame image is applied to the imaging device 10 so that the exposure amount in each frame becomes a designated exposure amount specified by the user using the imaging device 1.
  • the designated exposure amount is limited to a range less than the maximum exposure amount that is the exposure amount of the photoelectric conversion element 110 when the entire frame period is the exposure period. More specifically, the control unit 20 calculates (1) a ratio of the designated exposure amount when the maximum exposure amount is 1 (hereinafter, this ratio is referred to as “designated exposure amount ratio”).
  • FIG. 5C is a timing chart of the exposure state output pulse output by the control unit 20.
  • the control unit 20 outputs an exposure amount control pulse train having a cycle of T1 ⁇ 1 / L and a duty ratio of the designated exposure amount ratio to the image sensor 10.
  • the timing control circuit 160 controls the voltage application circuit 170 to expose the photoelectric conversion device 110 during the period when the exposure state control pulse is high.
  • the exposure period control pulse is low, and the photoelectric conversion element 110 is a light shielding period.
  • FIG. 5D is a timing chart showing the state of the photoelectric conversion element 110.
  • the photoelectric conversion element 110 has an exposure period when the exposure state control pulse is high, an exposure period, and a low period when the exposure state control pulse is low.
  • the image sensor 10 captures a frame image having the designated exposure amount by performing exposure for each high period in the exposure state control pulse train determined by the designated exposure amount ratio L times within the frame period T1.
  • the imaging apparatus 1 performs multiple exposure imaging processing as a characteristic operation.
  • FIG. 6 is a flowchart of the multiple exposure imaging process.
  • the multiple exposure imaging process is started when an operation for starting the multiple exposure imaging process from a user using the imaging apparatus 1 is received by the operation member 310.
  • the operation member 310 receives the operation from the user, and acquires the designated exposure amount specified by the user (step S10).
  • control unit 20 determines whether or not the designated exposure amount is less than the maximum exposure amount that is the exposure amount of the photoelectric conversion element 110 when the entire frame period is the exposure period. Is determined (step S20).
  • step S20 when the designated exposure amount is less than the maximum exposure amount (step S20: Yes), the control unit 20 designates the designated exposure amount ratio that is a ratio of the designated exposure amount when the maximum exposure amount is 1. Is calculated (step S30).
  • the control unit 20 starts outputting an exposure state control pulse train that has a cycle of 1 / L of the frame period T1 and uses the calculated designated exposure amount ratio as a duty ratio (step S1). S40), continuous output of the frame switching signal for each frame period T1 is started (step S50).
  • the image sensor 10 When the output of the exposure state control pulse train and the continuous output of the frame switching signal are started, the image sensor 10 is set to the high period in the exposure state control pulse train that is determined by the designated exposure amount ratio L times within the frame period T1. By performing exposure, continuous imaging of a frame image having a designated exposure amount is started (step S60).
  • Step S70 No is repeated.
  • step S70: No When the imaging end operation is received (step S70: No is repeated and then the process proceeds to step S70: Yes), the control unit 20 ends the continuous output of the frame switching signal (step S80), and outputs the exposure state control pulse train. The process ends (step S90).
  • the imaging device ends the continuous imaging of the frame image (step S100).
  • the imaging device 1 ends the multiple exposure process when the process of step S100 is completed and when the designated exposure amount is not less than the maximum exposure amount in the process of step S20 (step S20: No).
  • the imaging apparatus 1 when a plurality of frame images are continuously captured, it is possible to perform multiple exposures during the imaging period of each frame image. For this reason, when the subject is moving at a relatively high speed, in each frame image, an image in which the positions of the subject during the imaging period of the frame image are averaged is captured. As a result, when the subject is moving at a relatively high speed, the video composed of the images captured by the imaging device 1 is captured by a conventional imaging device that is exposed only once during the imaging period of each frame image. The movement of the subject appears to be more natural than that of a video image.
  • the imaging apparatus 1 it is possible to realize imaging having various imaging effects as compared with the conventional art.
  • the imaging apparatus 1 can adjust the exposure amount in each frame image by controlling the duty ratio of the exposure state control pulse train. For this reason, the imaging apparatus 1 can realize an ND (Neutral Density) function without using a diaphragm for adjusting the light amount.
  • ND Neutral Density
  • the ND function can be realized without using an aperture
  • the aperture can be used exclusively for subject depth adjustment.
  • the exposure amount can be adjusted by controlling the duty ratio of the exposure state control pulse train, the linear exposure amount can be adjusted relatively easily and accurately by using the imaging device 1. Is possible.
  • the photoelectric conversion member 111 generates light due to the internal photoelectric effect by receiving light in a state where a voltage in the first predetermined range is applied, and the voltage in the second predetermined range. It has been described that the organic thin film has a function that does not generate charges due to the internal photoelectric effect even when light is received in a state where is applied.
  • the photoelectric conversion member 111 is not necessarily limited to the organic thin film as long as the presence or absence of charge generation due to the internal photoelectric effect can be controlled by the applied voltage.
  • the imaging device 1 may be an example in which the photoelectric conversion member 111 is a diode having a PN junction surface.
  • the imaging apparatus 1 has been described on the assumption that the frame period T1 is 1/60 seconds, for example, and the number of pulses L of the exposure state control pulse train in the frame period T1 is 10, for example.
  • the frame period T1 is not necessarily limited to 1/60 seconds, and the number of pulses L of the exposure state control pulse train in the frame period T1 is not necessarily limited to 10.
  • the imaging apparatus 1 may be an example in which the frame period T1 is 1/50 second, an example in which the frame period T1 is set by a user who uses the imaging apparatus 1, and the like. Further, as an example, the imaging apparatus 1 may be an example in which the number of pulses L of the exposure state control pulse train in the frame period T1 is 100, an example set by a user using the imaging apparatus 1, and the like.
  • the present disclosure includes an electronic device in which the imaging device 1 according to the embodiment is incorporated.
  • Such an electronic device is realized, for example, as a digital still camera shown in FIG. 7A or a video camera shown in FIG. 7B.
  • the imaging apparatus 1 has been described as having a configuration separate from the optical system 210.
  • the imaging device 1 is not necessarily limited to a configuration that is separate from the optical system 210.
  • the imaging device 1 may be a camera with a lens including the optical system 210 and the lens driving unit 220.
  • Each component (functional block) in the imaging apparatus 1 may be individually made into one chip by a semiconductor device such as an IC (Integrated Circuit), an LSI (Large Scale Integration), or a part or all of them. Thus, it may be made into one chip. Further, the method of circuit integration is not limited to LSI's, and implementation using dedicated circuitry or general purpose processors is also possible. An FPGA (Field Programmable Gate Array) that can be programmed after manufacturing the LSI or a reconfigurable processor that can reconfigure the connection and setting of circuit cells inside the LSI may be used. Furthermore, if integrated circuit technology that replaces LSI appears as a result of progress in semiconductor technology or other derived technology, functional blocks may be integrated using this technology. Biotechnology can be applied as a possibility.
  • IC Integrated Circuit
  • LSI Large Scale Integration
  • all or part of the various processes described above may be realized by hardware such as an electronic circuit or may be realized by using software.
  • the processing by software is realized by a processor included in the imaging apparatus 1 executing a program stored in the memory.
  • the program may be recorded on a recording medium and distributed or distributed. For example, by installing the distributed program in a device having another processor and causing the processor to execute the program, it is possible to cause the device to perform each of the above processes.
  • the imaging device 1 includes the imaging device 10 that continuously captures a plurality of frame images, and the control unit 20 that controls the exposure state of the imaging device 10. Is exposed a plurality of times during the imaging period of one frame image in accordance with the control.
  • This imaging device 1 exposes a plurality of times during the imaging period of one frame image. For this reason, when the subject is moving at a relatively high speed, in each frame image, an image in which the positions of the subject during the imaging period of the frame image are averaged is captured. As a result, when the subject is moving at a relatively high speed, a video composed of images captured by the imaging device 1 is captured by a conventional imaging device that is exposed only once during the imaging period of each frame image. The movement of the subject appears to be more natural than that of an image composed of images.
  • the imaging apparatus 1 it is possible to realize imaging having various imaging effects as compared with the conventional art.
  • the imaging device 10 generates charges due to the internal photoelectric effect by receiving light in a state where a voltage in the first predetermined range is applied, and receives light in a state where a voltage in the second predetermined range is applied.
  • the control unit 20 includes a photoelectric conversion member 111 that does not generate charges due to the internal photoelectric effect, and the control unit 20 applies the voltage within the first predetermined range and the second predetermined range to the photoelectric conversion member 111 during the imaging period of the one frame image.
  • the control may be performed by alternately applying a voltage within a range.
  • the imaging apparatus 1 can realize the control of the exposure state of the imaging element without using a mechanical shutter.
  • the image sensor 10 may be an organic CMOS image sensor using an organic thin film as a photoelectric conversion member 111.
  • control unit 20 may perform the control so that the application of the voltage in the first predetermined range and the application of the voltage in the second predetermined range are switched at a constant period.
  • control of voltage application to the photoelectric conversion member 111 can be realized relatively easily.
  • the control unit 20 when applying a voltage in the first predetermined range to the image sensor 10, applies a first specific voltage in the first predetermined range and sets the voltage in the second predetermined range.
  • a second specific voltage within the second predetermined range is applied, and in the control, a period for applying the first specific voltage and a period for applying the second specific voltage to the image sensor 10.
  • the exposure amount of the image sensor 10 during the imaging period of the one frame image may be adjusted by changing the duty ratio in the fixed period.
  • the camera 200 includes the imaging device 1 and a lens that collects external light on the imaging element 10.
  • This camera 200 exposes a plurality of times during the imaging period of one frame image. For this reason, when the subject is moving at a relatively high speed, in each frame image, an image in which the positions of the subject during the imaging period of the frame image are averaged is captured. As a result, when the subject is moving at a relatively high speed, an image formed by the image captured by the camera 200 is an image captured by a conventional camera that is exposed only once during the imaging period of each frame image. The movement of the subject looks more natural than the video consisting of
  • the camera 200 it is possible to realize imaging having various imaging effects as compared with the conventional art.
  • the imaging apparatus 1 using this imaging method exposes a plurality of times during the imaging period of one frame image. For this reason, when the subject is moving at a relatively high speed, in each frame image, an image in which the positions of the subject during the imaging period of the frame image are averaged is captured. As a result, when the subject is moving at a relatively high speed, a video composed of images captured by the imaging device 1 using this imaging method is exposed only once during the imaging period of each frame image. The movement of the subject appears to be more natural than that of a video composed of an image captured by an imaging apparatus that uses the imaging method.
  • the present disclosure can be widely used for imaging devices that capture images.
  • Imaging device 10 Imaging element 20 Control part 21 Pixel circuit 110 Photoelectric conversion element 111 Photoelectric conversion member 112 Upper transparent electrode 113 Lower pixel electrode 120 Pixel circuit array 130 Reading circuit 140 Output circuit 150 Row scanning circuit 160 Timing control circuit 170 Voltage application circuit 200 Camera 211 Zoom lens 212 Camera shake correction lens 213 Focus lens

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Studio Devices (AREA)

Abstract

La présente invention concerne un dispositif d'imagerie (1) qui est pourvu d'un élément d'imagerie (10) qui capture successivement une pluralité d'images de vues, et d'une unité de commande (20) qui commande l'état d'exposition dans l'élément d'imagerie (10). L'élément d'imagerie (10) effectue des expositions de multiples fois pendant une période de capture d'image à une seule vue en fonction de la commande.
PCT/JP2017/046592 2016-12-27 2017-12-26 Dispositif d'imagerie, appareil de capture d'image et procédé d'imagerie WO2018124048A1 (fr)

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JP2016-254495 2016-12-27

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005223798A (ja) * 2004-02-09 2005-08-18 Matsushita Electric Ind Co Ltd 固体撮像装置
JP2007104114A (ja) * 2005-09-30 2007-04-19 Fujifilm Corp 感度可変型撮像素子及びこれを搭載した撮像装置
JP2011060830A (ja) * 2009-09-07 2011-03-24 Japan Advanced Institute Of Science & Technology Hokuriku 光照射によって誘電率が変化する膜およびそれを用いた電子デバイス
WO2014024581A1 (fr) * 2012-08-09 2014-02-13 ソニー株式会社 Élément de conversion photoélectrique, dispositif d'imagerie et capteur optique
JP2016034101A (ja) * 2014-07-31 2016-03-10 キヤノン株式会社 光電変換装置、光電変換システム
JP2016086407A (ja) * 2014-10-23 2016-05-19 パナソニックＩｐマネジメント株式会社 撮像装置および画像取得装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005223798A (ja) * 2004-02-09 2005-08-18 Matsushita Electric Ind Co Ltd 固体撮像装置
JP2007104114A (ja) * 2005-09-30 2007-04-19 Fujifilm Corp 感度可変型撮像素子及びこれを搭載した撮像装置
JP2011060830A (ja) * 2009-09-07 2011-03-24 Japan Advanced Institute Of Science & Technology Hokuriku 光照射によって誘電率が変化する膜およびそれを用いた電子デバイス
WO2014024581A1 (fr) * 2012-08-09 2014-02-13 ソニー株式会社 Élément de conversion photoélectrique, dispositif d'imagerie et capteur optique
JP2016034101A (ja) * 2014-07-31 2016-03-10 キヤノン株式会社 光電変換装置、光電変換システム
JP2016086407A (ja) * 2014-10-23 2016-05-19 パナソニックＩｐマネジメント株式会社 撮像装置および画像取得装置

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