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WO2018126679A1 - X射线探测器及其制造方法 - Google Patents

X射线探测器及其制造方法 Download PDF

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Publication number
WO2018126679A1
WO2018126679A1 PCT/CN2017/096440 CN2017096440W WO2018126679A1 WO 2018126679 A1 WO2018126679 A1 WO 2018126679A1 CN 2017096440 W CN2017096440 W CN 2017096440W WO 2018126679 A1 WO2018126679 A1 WO 2018126679A1
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Prior art keywords
photosensitive
electrode
base substrate
ray detector
layer
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PCT/CN2017/096440
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English (en)
French (fr)
Inventor
田慧
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京东方科技集团股份有限公司
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Priority to US15/763,551 priority Critical patent/US10690786B2/en
Publication of WO2018126679A1 publication Critical patent/WO2018126679A1/zh

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2006—Measuring radiation intensity with scintillation detectors using a combination of a scintillator and photodetector which measures the means radiation intensity
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/208—Circuits specially adapted for scintillation detectors, e.g. for the photo-multiplier section
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/016—Manufacture or treatment of image sensors covered by group H10F39/12 of thin-film-based image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H10F77/1223—Active materials comprising only Group IV materials characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/166—Amorphous semiconductors
    • H10F77/1662—Amorphous semiconductors including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers

Definitions

  • the present disclosure relates to the field of detection technologies, and in particular, to an X-ray detector and a method of fabricating the same.
  • X-ray detector (English: X-ray detector) is a device for converting X-rays (English: X-ray) that are invisible to the naked eye into electrical signals.
  • X-ray detector when the photosensitive layer is enlarged, the detection accuracy of the X-ray detector is lowered.
  • the embodiment of the present disclosure provides an X-ray detector and a method of manufacturing the same.
  • the technical solution is as follows:
  • an X-ray detector comprising:
  • the detecting module including a thin film transistor disposed on the base substrate, an insulating layer having a via provided on the thin film transistor, and disposed on the a photosensitive structure on the insulating layer, the first electrode of the thin film transistor is electrically connected to the photosensitive structure through a via hole on the insulating layer, the first electrode is a source or a drain of the thin film transistor;
  • a scintillation layer is disposed on the detection module.
  • the photosensitive structure includes a photosensitive layer, a driving electrode, and a sensing electrode, and the sensing electrode is electrically connected to the first electrode through a via hole on the insulating layer,
  • the drive electrode is for applying a voltage to the photosensitive layer
  • the sensing electrode is for receiving a current output by the photosensitive layer
  • the photosensitive layer comprises a lightly doped amorphous silicon photosensitive layer.
  • the lightly doped amorphous silicon photosensitive layer is a boron lightly doped amorphous silicon photosensitive layer, and the number of boron atoms per square centimeter in the lightly doped amorphous silicon photosensitive layer is 5 ⁇ 10 11 to 1 ⁇ 10 13 .
  • the photosensitive structure further comprises an organic-inorganic composite dielectric film,
  • the organic-inorganic composite dielectric film is disposed between the driving electrode and the photosensitive layer;
  • the organic-inorganic composite dielectric film is also disposed between the sensing electrode and the photosensitive layer.
  • the organic-inorganic composite dielectric film has a thickness of from 100 nanometers to 300 nanometers.
  • an orthographic projection of the photosensitive structure on the substrate substrate and an orthographic projection of the thin film transistor on the substrate substrate have overlapping regions.
  • the photosensitive layer of the plurality of detection modules is a unitary structure.
  • the organic-inorganic composite dielectric film of the plurality of detection modules is a unitary structure.
  • a method of fabricating an X-ray detector comprising:
  • the detecting module including a thin film transistor disposed on the base substrate, an insulating layer having a via hole disposed on the thin film transistor, and being disposed on the insulating layer a photosensitive structure, the first electrode of the thin film transistor is electrically connected to the photosensitive structure through a via hole on the insulating layer, the first electrode being a source or a drain of the thin film transistor;
  • a scintillation layer is formed on the detection module.
  • the forming a plurality of detecting modules on the base substrate includes:
  • the photosensitive structure is formed on a base substrate on which the insulating layer including the via holes is formed.
  • the forming the photosensitive structure on the base substrate on which the insulating layer including the via is formed includes:
  • a photosensitive layer is formed on the base substrate on which the drive electrode and the sensing electrode are formed.
  • the method before the forming a photosensitive layer on the substrate substrate on which the driving electrode and the sensing electrode are formed, the method further includes:
  • Forming a photosensitive layer on the substrate substrate on which the driving electrode and the sensing electrode are formed including:
  • the photosensitive layer is formed on a base substrate on which the organic-inorganic composite dielectric film is formed.
  • the forming a photosensitive layer on the substrate substrate on which the driving electrode and the sensing electrode are formed includes:
  • the amorphous silicon film subjected to boron ion implantation is subjected to a low temperature annealing treatment to convert the amorphous silicon film into the photosensitive layer.
  • the low temperature annealing treatment has a temperature of from 150 degrees Celsius to 230 degrees Celsius for a period of from 1 hour to 2 hours.
  • the photosensitive area of the photosensitive structure is increased without being affected by the thin film transistor.
  • the problem that the detection accuracy of the X-ray detector is lowered when the photosensitive layer is increased in the prior art is solved.
  • the effect of increasing the photosensitive area of the photosensitive structure without reducing the detection accuracy of the X-ray detector is achieved.
  • FIG. 1 is a schematic structural view of an X-ray detector in the related art
  • FIG. 2 is a schematic structural view of an X-ray detector according to an embodiment of the present disclosure
  • 3-1 is a schematic structural diagram of another X-ray detector according to an embodiment of the present disclosure.
  • 3-2 is a graph showing the relationship between the wavelength of light and the light absorption coefficient of the light-doped amorphous silicon photosensitive layer in the embodiment shown in FIG. 3-1;
  • FIG. 4 is a flow chart of a method of manufacturing an X-ray detector according to an embodiment of the present disclosure
  • 5-1 is a flowchart of a method for manufacturing another X-ray detector according to an embodiment of the present disclosure
  • Figure 5-2 is a flow chart of forming a photosensitive layer in the embodiment of Figure 5-1.
  • the X-ray detector generally includes a substrate 11 and a plurality of detecting modules disposed on the substrate 11 and a scintillation layer 14 disposed on the plurality of detecting modules, each detecting module including a thin film transistor (English: Thin Film) Transistor; abbreviated as: TFT) 12 and a photosensitive structure 13, the photosensitive structure 13 is disposed on the drain of the TFT 12, and is electrically connected to the TFT 12, the scintillation layer 14 is used to convert X-rays into visible light, and the photosensitive structure 13 is used to convert the visible light.
  • TFT 12 is used as a switch for reading the electrical signal.
  • an X-ray emitting device and an X-ray detector may be disposed on both sides of a measured object (for example, a human body), and X-rays emitted from the X-ray emitting device are modulated while passing through the measured body, and are The modulated X-rays are illuminated by an X-ray detector that converts the modulated X-rays into electrical signals and outputs them.
  • Signal-to-noise ratio (English: signal-to-noise ratio; SNR) of the X-ray detector and the photosensitive area of the photosensitive structure (photosensitive structure receiving X)
  • SNR signal-to-noise ratio
  • the area of one side of the ray is positively correlated, and the signal-to-noise ratio of the X-ray detector can be increased by increasing the photosensitive area of the photosensitive structure.
  • the inventors have found that the prior art has at least the following problem: when the existing photosensitive area of the photosensitive structure disposed on the drain of the TFT is increased, the detecting module is also increased, and the detecting module The increase in the density of the detection module in the X-ray detector reduces the detection accuracy of the X-ray detector.
  • the X-ray detector can include:
  • a plurality of detecting modules 22 are disposed on the base substrate 21, and any one of the plurality of detecting modules 22 includes a TFT 221 disposed in sequence, an insulating layer 222 provided with a via hole (not shown in FIG. 2), and a photosensitive structure 223.
  • the first electrode E1 in the TFT 221 is electrically connected to the photosensitive structure 223 through a via hole on the insulating layer 222, and the first electrode E1 is a source or a drain of the TFT 221.
  • a scintillation layer 23 is disposed on the base substrate 21 provided with the plurality of detecting modules 22, and the scintillation layer 23 is disposed on the detecting module.
  • the X-ray detector provided by the embodiment of the present disclosure does not be affected by the TFT when the photosensitive structure of the photosensitive structure is increased by layering the photosensitive structure and the TFT.
  • the problem that the detection accuracy of the X-ray detector is lowered when the photosensitive layer is increased in the prior art is solved.
  • the effect of increasing the photosensitive area of the photosensitive structure without reducing the detection accuracy of the X-ray detector is achieved.
  • FIG. 3-1 is a schematic structural diagram of another X-ray detector according to an embodiment of the present disclosure.
  • the X-ray detector is added to the X-ray detector shown in FIG. More preferred components are provided such that the X-ray detector provided by the embodiments of the present disclosure has better performance.
  • the photosensitive structure includes a photosensitive layer 223a, a driving electrode 223b, and a sensing electrode 223c.
  • the sensing electrode 223c is electrically connected to the first electrode E1 through a via hole (not shown in FIG. 3-1) on the insulating layer 222.
  • the driving electrode 223b is used to apply a voltage to the photosensitive layer 223a, and the photo-generated carriers in the photosensitive layer 223a (which are generated by the light emitted by the scintillation layer) are ionized, and the electrons move to form a current.
  • the sensing electrode 223c is for receiving the current output by the photosensitive layer 223a.
  • the material of the driving electrode 223b and the sensing electrode 223c may include molybdenum (English: Molybdenum; abbreviation: Mo), aluminum, silver nanowires, graphene, and the like.
  • the driving electrode 223b and the sensing electrode 223c may be fabricated by a magnetron sputtering method or a solution method, and the driving electrode 223b and the sensing electrode 223c may have a thickness of 30 nm (nanometer) to 200 nm.
  • the photosensitive layer 223a comprises a lightly doped amorphous silicon photosensitive layer.
  • the lightly doped amorphous silicon photosensitive layer 223a is a boron lightly doped amorphous silicon photosensitive layer, and the number of boron atoms per square centimeter in the lightly doped amorphous silicon photosensitive layer 223a is 5 ⁇ . 10 11 to 1 ⁇ 10 13 .
  • the light absorption coefficient of the boron lightly doped amorphous silicon photosensitive layer is higher, and the higher the light absorption coefficient, the higher the performance of the photosensitive layer. As shown in Fig. 3-2, it is a graph showing the relationship between the wavelength of light and the light absorption coefficient of an amorphous silicon photosensitive layer having different boron doping degrees.
  • the horizontal axis represents the wavelength of light, the unit is nanometer, the vertical axis represents the light absorption coefficient, the unit is 10 5 per centimeter (10 5 /cm), the curve q1 represents the curve when the boron doping rate is 0.8%, and the curve q2 represents boron.
  • the boron atoms fill the dangling bonds in the amorphous silicon photosensitive layer, resulting in the formation of stable silicon-boron bonds in the amorphous silicon photosensitive layer, which reduces the defect states and dangling bonds in the amorphous silicon film, enhancing the non-
  • the ability of the crystalline silicon film to absorb photons and generate photoelectrons ensures that the photocurrent of the photosensitive structure is improved while using a thinner amorphous silicon film as the photosensitive layer, which can effectively improve the detection quantum efficiency and imaging quality of the detector.
  • the photosensitive structure further includes an organic-inorganic composite dielectric film 223d disposed between the driving electrode 223b and the photosensitive layer 223a; the organic-inorganic composite dielectric film 223d is further disposed on the sensing electrode 223c and the photosensitive Between layers 223a.
  • the organic-inorganic composite dielectric film 223d may include an inorganic dielectric film 223d1 and an organic dielectric film 223d2, and the material of the inorganic dielectric film 223d1 may include SiO 2 (silicon dioxide) or SiNx (silicon nitride), and the material of the organic dielectric film 223d2 may include poly Imide (English: Polyimide; referred to as: PI).
  • Photocurrent and dark current are parameters of a photosensitive device (such as a photosensitive layer).
  • the current passing through the photosensitive device when illuminated is called photocurrent.
  • the current that the photosensitive device passes under the applied voltage when there is no light is called dark current.
  • the ratio of light to dark current is the ratio of photocurrent to dark current. The higher the ratio, the higher the photoelectric conversion efficiency of the photosensitive device, and the higher the signal-to-noise ratio of the X-ray detector made of the photosensitive device.
  • the organic-inorganic composite dielectric film is disposed in the photosensitive structure to reduce the dark current to increase the light-dark current ratio.
  • the organic-inorganic composite dielectric film 223d has a thickness of from 100 nm to 300 nm.
  • the orthographic projection of the photosensitive structure on the base substrate 21 (the size of the orthographic projection may be determined by the photosensitive layer 223a in the photosensitive structure) and the orthographic projection of the TFT 221 on the substrate substrate 21 have overlapping regions,
  • the photosensitive structure and the TFT are arranged in an overlapping manner, so that the photosensitive structure can cover the upper surface of the entire detecting module (the upper surface can be the side that receives the X-rays), which greatly improves the photosensitive area of the photosensitive structure.
  • the photosensitive layer 223a of the plurality of detecting modules 22 is a unitary structure, that is, the photosensitive layer 223a of the plurality of detecting modules 22 in the X-ray detector may be a whole film layer, which can simplify the photosensitive layer. Formation process.
  • the organic-inorganic composite dielectric film 223d of the plurality of detecting modules 22 is a unitary structure, that is, the organic-inorganic composite dielectric film 223d of the plurality of detecting modules 22 in the X-ray detector may be a whole film connected together.
  • the layer which simplifies the formation of the photosensitive layer.
  • the photosensitive structure may further include a metal line 223e, which may be a trace of the driving electrode 223b and some other electrodes for connection with an external power source capable of driving the electrode through the metal line 223e 223b applies a voltage.
  • the metal wire 223e may further be provided with a metal wire protection layer for preventing oxidation of the metal wire 223e, and the metal wire protection layer may be composed of indium tin oxide (ITO: ITO).
  • the material of the scintillation layer 23 may include cesium iodide (English: Cesium iodide), which is a light sensitive material.
  • the scintillation layer 23 may include a columnar array of crystals having a thickness of from 400 micrometers to 1000 micrometers.
  • a passivation layer (Passivation; abbreviation: PVX) 24 may be disposed between the scintillation layer 23 and the photosensitive layer 223a, and the passivation layer 24 may be used to protect the photosensitive layer 223a.
  • the TFT 221 further includes a gate G and a second electrode E2, through which the TFT 221 can be controlled to be turned on or off, the second electrode E2 can be connected to the data line D, and the data line D can be externally
  • a receiving component is coupled for receiving a charge converted by the X-ray detector.
  • the amount of charge outputted by the TFTs at different positions is proportional to the dose of X-rays at different positions, so that the dose of X-rays at different positions can be known, and a digital image of the X-rays can be obtained to obtain a digital image of the X-rays.
  • a digital image of the X-rays can be obtained to obtain a digital image of the X-rays.
  • the TFT 221 may be an amorphous silicon TFT or a low temperature polysilicon TFT or the like.
  • the base substrate 21 may be a glass substrate, a silicon wafer or a polyimide plastic substrate or the like.
  • the X-ray detector provided by the embodiment of the present disclosure does not be affected by the TFT when the photosensitive structure of the photosensitive structure is increased by layering the photosensitive structure and the TFT.
  • the problem that the detection accuracy of the X-ray detector is lowered when the photosensitive layer is increased in the prior art is solved.
  • the effect of increasing the photosensitive area of the photosensitive structure without reducing the detection accuracy of the X-ray detector is achieved.
  • FIG. 4 is a flow chart of a method of manufacturing an X-ray detector according to an embodiment of the present disclosure, which may be used to manufacture an X-ray detector as shown in FIG. 2, the method comprising:
  • Step 401 forming a plurality of detecting modules on the base substrate, and any one of the plurality of detecting modules includes a thin film transistor TFT, a insulating layer including a via hole, and a photosensitive structure, and the first electrode in the TFT is insulated
  • the via holes on the layer are electrically connected to the photosensitive structure, and the first electrode is a source or a drain of the TFT.
  • Step 402 forming a scintillation layer on the base substrate on which the plurality of detecting modules are formed.
  • the manufacturing method of the X-ray detector provided by the embodiment of the present disclosure is not affected by the TFT when the photosensitive structure of the photosensitive structure is increased by layering the photosensitive structure and the TFT.
  • the problem that the detection accuracy of the X-ray detector is lowered when the photosensitive layer is increased in the prior art is solved.
  • the effect of increasing the photosensitive area of the photosensitive structure without reducing the detection accuracy of the X-ray detector is achieved.
  • 5-1 is a flowchart of a method for manufacturing another X-ray detector according to an embodiment of the present disclosure.
  • the method can be used to manufacture an X-ray detector as shown in FIG. 3-1, and the method includes:
  • Step 501 forming a TFT on the base substrate.
  • a TFT can be formed on the base substrate, and the TFT can be an array of TFTs, and one TFT can be formed for each of the detecting modules.
  • the TFT on the base substrate may include at least one of an amorphous silicon TFT and a low temperature polysilicon TFT.
  • the first electrode, the second electrode, and the gate may be included in the TFT.
  • Step 502 forming an insulating layer including a via hole on the base substrate on which the TFT is formed.
  • An insulating layer including a via hole may be formed on a substrate formed with a TFT by a patterning process, the via hole being used
  • the electrode under the insulating layer can be brought into contact with the photosensitive structure above the insulating layer.
  • Step 503 forming a driving electrode and a sensing electrode on the base substrate formed with the insulating layer including the via hole, and the sensing electrode is electrically connected to the first electrode through the via hole on the insulating layer.
  • the driving electrode and the sensing electrode may be formed on the base substrate on which the insulating layer including the via hole is formed by a magnetron sputtering method or a solution method, and the sensing electrode is electrically connected to the first electrode through a via hole on the insulating layer.
  • Step 504 forming an organic-inorganic composite dielectric film on the base substrate on which the driving electrode and the sensing electrode are formed.
  • an organic-inorganic composite dielectric film may be formed on the substrate substrate on which the driving electrode and the sensing electrode are formed.
  • the organic-inorganic composite dielectric film may have a thickness of 100 nm to 300 nm for reducing the dark current of the photosensitive structure.
  • the organic-inorganic composite dielectric film may include an inorganic dielectric film and an organic dielectric film, the material of the inorganic dielectric film may include SiO 2 or SiNx, and the material of the organic dielectric film may include polyimide.
  • the organic-inorganic composite dielectric film in the plurality of detecting modules may be a unitary structure, and the integrated structure may be formed at one time by step 504.
  • Step 505 forming a photosensitive layer on the base substrate on which the organic-inorganic composite dielectric film is formed.
  • this step can include the following three sub-steps:
  • Sub-step 5051 forming an amorphous silicon film on the base substrate on which the drive electrode and the sensing electrode are formed.
  • an amorphous silicon film may first be formed on the substrate substrate on which the driving electrode and the sensing electrode are formed.
  • Sub-step 5052 boron ion implantation is performed on the amorphous silicon film.
  • boron ion implantation may be performed on the amorphous silicon film, and the acceleration voltage at the time of implantation may be 20 kV (kilovolt) to 50 kV. After the implantation is completed, the number of boron atoms per square centimeter in the amorphous silicon film may be 5 ⁇ 10 11 to 1 ⁇ 10 13 .
  • Sub-step 5053 the amorphous silicon film subjected to boron ion implantation is subjected to low-temperature annealing treatment to convert the amorphous silicon film into a photosensitive layer.
  • the amorphous silicon film subjected to boron ion implantation may be subjected to low-temperature annealing treatment to convert the amorphous silicon film into a photosensitive layer.
  • the temperature of the low temperature annealing treatment is from 150 degrees Celsius to 230 degrees Celsius for a period of from 1 hour to 2 hours.
  • the photosensitive layer in the plurality of detecting modules may be a whole film layer, and the entire film layer may be formed at one time through sub-step 5051 to sub-step 5052.
  • a plurality of detecting modules arranged in an array may be formed on the base substrate through steps 503 to 505.
  • Step 506 forming a scintillation layer on the base substrate on which the plurality of detecting modules are formed.
  • a scintillation layer may be formed on the base substrate on which the plurality of detecting modules are formed.
  • the scintillation layer may be a columnar array of crystals, and the material may include cesium iodide and may have a thickness of from 400 micrometers to 1000 micrometers.
  • a passivation layer for protecting the photosensitive layer and a metal line protection layer for protecting the electrode traces in the X-ray detector may be formed before the layer is formed.
  • the manufacturing method of the X-ray detector provided by the embodiment of the present disclosure is not affected by the TFT when the photosensitive structure of the photosensitive structure is increased by layering the photosensitive structure and the TFT.
  • the problem that the detection accuracy of the X-ray detector is lowered when the photosensitive layer is increased in the prior art is solved.
  • the effect of increasing the photosensitive area of the photosensitive structure without reducing the detection accuracy of the X-ray detector is achieved.
  • At least one of A and B in the present disclosure is merely an association relationship describing an associated object, indicating that there may be three relationships, for example, at least one of A and B, which may indicate that A exists separately, while There are three cases of A and B, and B alone.
  • at least one of A, B, and C means that there are seven relationships, which can be expressed as: A exists separately, B exists separately, C exists separately, A and B exist simultaneously, and A and C exist simultaneously. C and B, there are seven cases of A, B and C.
  • "at least one of A, B, C, and D” means that there may be fifteen relationships, which may indicate that A exists separately, B exists separately, C exists separately, D exists separately, and A and B exist simultaneously.
  • a person skilled in the art may understand that all or part of the steps of implementing the above embodiments may be completed by hardware, or may be instructed by a program to execute related hardware, and the program may be stored in a computer readable storage medium.
  • the storage medium mentioned may be a read only memory, a magnetic disk or an optical disk or the like.

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Abstract

一种X射线探测器及其制造方法，属于探测技术领域。X射线探测器包括：衬底基板(21)；衬底基板(21)上设置有多个探测模块(22)，多个探测模块(22)中的任一探测模块包括依次设置的薄膜晶体管TFT(221)、设置有过孔的绝缘层(222)和感光结构(223)，TFT(221)中的第一电极(E1)通过绝缘层(222)上的过孔和感光结构(223)电连接，第一电极(E1)为TFT(221)的源极或漏极；设置有多个探测模块(22)的衬底基板(21)上设置有闪烁层(23)。通过分层设置感光结构(223)和TFT(221)，使得增大感光结构的感光面积时，不会受到TFT(221)的影响。解决现有技术中增大感光层时，X射线探测器的探测精度会降低的问题。达到了能够在不降低X射线探测器的探测精度的情况下，增大感光结构(223)的感光面积的效果。

Description

X射线探测器及其制造方法
交叉引用
本申请要求于2017年1月4日提交的申请号为201710005101.1、名称为“X射线探测器及其制造方法”的中国专利申请的优先权，该中国专利申请的全部内容通过引用全部并入本文。
技术领域
本公开涉及探测技术领域，特别涉及一种X射线探测器及其制造方法。
背景技术
X射线探测器(英文：X-ray detector)是一种用于将肉眼看不到的X射线(英文：X-ray)转换为电信号的装置。在现有的X射线探测器中，增大感光层时，X射线探测器的探测精度会降低。
发明内容
为了解决现有技术中增大感光层时，X射线探测器的探测精度会降低的问题，本公开实施例提供了一种X射线探测器及其制造方法。所述技术方案如下：
根据本公开的第一方面，提供了一种X射线探测器，所述X射线探测器包括：
衬底基板；
多个探测模块，设置在所述衬底基板上，所述探测模块包括设置在所述衬底基板上的薄膜晶体管，设置在所述薄膜晶体管上的具有过孔的绝缘层和设置在所述绝缘层上的感光结构，所述薄膜晶体管的第一电极通过所述绝缘层上的过孔和所述感光结构电连接，所述第一电极为所述薄膜晶体管的源极或漏极；
闪烁层，设置在所述探测模块上。
在一个实施方式中，所述感光结构包括感光层、驱动电极和感测电极，所述感测电极通过所述绝缘层上的过孔与所述第一电极电连接，
所述驱动电极用于向所述感光层中施加电压，所述感测电极用于接收所述感光层输出的电流。
在一个实施方式中，所述感光层包括轻掺杂的非晶硅感光层。
在一个实施方式中，所述轻掺杂的非晶硅感光层为硼轻掺杂的非晶硅感光层，所述轻掺杂的非晶硅感光层中每平方厘米的硼原子个数为5×1011至1×1013。
在一个实施方式中，所述感光结构还包括有机无机复合介质薄膜，
所述有机无机复合介质薄膜设置在所述驱动电极与所述感光层之间；
所述有机无机复合介质薄膜还设置在所述感测电极与所述感光层之间。
在一个实施方式中，所述有机无机复合介质薄膜的厚度为100纳米至300纳米。
在一个实施方式中，所述感光结构在所述衬底基板上的正投影和所述薄膜晶体管在所述衬底基板上的正投影存在重叠区域。
在一个实施方式中，所述多个探测模块中的感光层为一体结构。
在一个实施方式中，所述多个探测模块中有机无机复合介质薄膜为一体结构。
根据本公开的第二方面，提供一种X射线探测器的制造方法，所述方法包括：
在衬底基板上形成多个探测模块，所述探测模块包括设置在所述衬底基板上的薄膜晶体管，设置在所述薄膜晶体管上的具有过孔的绝缘层和设置在所述绝缘层上的感光结构，所述薄膜晶体管中的第一电极通过所述绝缘层上的过孔和所述感光结构电连接，所述第一电极为所述薄膜晶体管的源极或漏极；
在所述探测模块上形成闪烁层。
在一个实施方式中，所述在衬底基板上形成多个探测模块，包括：
在所述衬底基板上形成所述薄膜晶体管；
在形成有所述薄膜晶体管的衬底基板上形成所述包括过孔的绝缘层；
在形成有所述包括过孔的绝缘层的衬底基板上形成所述感光结构。
在一个实施方式中，所述在形成有所述包括过孔的绝缘层的衬底基板上形成所述感光结构，包括：
在形成有所述包括过孔的绝缘层的衬底基板上形成驱动电极和感测电极，所述感测电极通过所述绝缘层上的过孔与所述第一电极电连接；
在形成有所述驱动电极和所述感测电极的衬底基板上形成感光层。
在一个实施方式中，所述在形成有所述驱动电极和所述感测电极的衬底基板上形成感光层之前，所述方法还包括：
在形成有所述驱动电极和所述感测电极的衬底基板上形成有机无机复合介质薄膜；
所述在形成有所述驱动电极和所述感测电极的衬底基板上形成感光层，包括：
在形成有所述有机无机复合介质薄膜的衬底基板上形成所述感光层。
在一个实施方式中，所述在形成有所述驱动电极和所述感测电极的衬底基板上形成感光层，包括：
在形成有所述驱动电极和所述感测电极的衬底基板上形成非晶硅薄膜；
对所述非晶硅薄膜进行硼离子注入；
对进行硼离子注入后的所述非晶硅薄膜进行低温退火处理，使所述非晶硅薄膜转变为所述感光层。
在一个实施方式中，所述低温退火处理的温度为150摄氏度至230摄氏度，时间为1小时至2小时。
本公开实施例提供的技术方案带来的有益效果是：
通过分层设置感光结构和薄膜晶体管，使得增大感光结构的感光面积时，不会受到薄膜晶体管的影响。解决现有技术中增大感光层时，X射线探测器的探测精度会降低的问题。达到了能够在不降低X射线探测器的探测精度的情况下，增大感光结构的感光面积的效果。
附图说明
为了更清楚地说明本公开实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本公开的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是相关技术中的一种X射线探测器的结构示意图；
图2本公开实施例示出的一种X射线探测器的结构示意图；
图3-1本公开实施例示出的另一种X射线探测器的结构示意图；
图3-2是图3-1所示实施例中硼轻掺杂的非晶硅感光层对于光线的波长和光吸收系数的关系曲线图；
图4是本公开实施例提供的一种X射线探测器的制造方法的流程图；
图5-1是本公开实施例提供的另一种X射线探测器的制造方法的流程图；
图5-2是图5-1所示实施例中一种形成感光层的流程图。
通过上述附图，已示出本公开明确的实施例，后文中将有更详细的描述。这些附图和文字描述并不是为了通过任何方式限制本公开构思的范围，而是通过参考特定实施例为本领域技术人员说明本公开的概念。
具体实施方式
为使本公开的目的、技术方案和优点更加清楚，下面将结合附图对本公开实施方式作进一步地详细描述。
如图1所示，X射线探测器通常包括基板11以及设置在基板11上的多个探测模块以及设置在多个探测模块上的闪烁层14，每个探测模块包括薄膜晶体管(英文：Thin Film Transistor；简称：TFT)12和感光结构13，感光结构13设置在TFT12的漏极上，且与TFT12电连接，闪烁层14用于将X射线转化为可见光，感光结构13用于将该可见光转化为电信号，TFT12用于作为读取该电信号的开关。在使用X射线探测器时，可以将X射线发射装置和X射线探测器设置在被测体(例如人体)的两侧，X射线发射装置发射的X射线在通过被测体时被调制，被调制的X射线照射在X射线探测器后，X射线探测器能够将调制的X射线转换为电信号并输出。X射线探测器的信噪比(英文：signal-to-noise ratio；简称：SNR)与感光结构的感光面积(感光结构接收X 射线的一侧的面积)正相关，通过增大感光结构的感光面积能够增大X射线探测器的信噪比。
在实现本公开的过程中，发明人发现现有技术至少存在以下问题：在现有的增大设置于TFT的漏极上的感光结构的感光面积时，探测模块也会增大，而探测模块的增大会使X射线探测器中探测模块的密度降低，进而会降低X射线探测器的探测精度。
图2是本公开实施例示出的一种X射线探测器的结构示意图。该X射线探测器可以包括：
衬底基板21；
衬底基板21上设置有多个探测模块22，多个探测模块22中的任一探测模块包括依次设置的TFT221、设置有过孔(图2中未标出)的绝缘层222和感光结构223，TFT221中的第一电极E1通过绝缘层222上的过孔和感光结构223电连接，第一电极E1为TFT221的源极或漏极；
设置有多个探测模块22的衬底基板21上设置有闪烁层23，闪烁层23设置在所述探测模块上。
综上所述，本公开实施例提供的X射线探测器，通过分层设置感光结构和TFT，使得增大感光结构的感光面积时，不会受到TFT的影响。解决现有技术中增大感光层时，X射线探测器的探测精度会降低的问题。达到了能够在不降低X射线探测器的探测精度的情况下，增大感光结构的感光面积的效果。
进一步的，请参考图3-1，其示出了本公开实施例提供的另一种X射线探测器的结构示意图，该X射线探测器在图2所示的X射线探测器的基础上增加了更优选的部件，从而使得本公开实施例提供的X射线探测器具有更好的性能。
在一个实施方式中，感光结构包括感光层223a、驱动电极223b和感测电极223c，感测电极223c通过绝缘层222上的过孔(图3-1中未标出)与第一电极E1电连接，驱动电极223b用于向感光层223a中施加电压，感光层223a中的光生载流子(该光生载流子在闪烁层发出的光线的作用下产生的)会被电离，电子移动形成电流并被感测电极223c接收，感测电极223c用于接收感光层223a输出的电流。
驱动电极223b和感测电极223c的材料可以包括钼(英文：Molybdenum；简称：Mo)，铝，银纳米线和石墨烯等。驱动电极223b和感测电极223c可以通过磁控溅射法或者溶液法制造，驱动电极223b和感测电极223c的厚度可以为30nm(纳米)至200nm。
在一个实施方式中，感光层223a包括轻掺杂的非晶硅感光层。
在一个实施方式中，轻掺杂的非晶硅感光层223a为硼轻掺杂的非晶硅感光层，轻掺杂的非晶硅感光层223a中每平方厘米的硼原子个数为5×1011至1×1013。硼轻掺杂的非晶硅感光层的光吸收系数较高，而光吸收系数越高，感光层的性能就越高。如图3-2所示，其为不同硼掺杂度的非晶硅感光层的光线的波长和光吸收系数的关系曲 线图。其中横轴表示光的波长，单位为纳米，纵轴表示光吸收系数，单位为105每厘米(105/cm)，曲线q1代表硼掺杂率为0.8％时的曲线，曲线q2代表硼掺杂率为0.6％时的曲线，曲线q1代表硼掺杂率为0.4％时的曲线，可以看出，硼的掺杂率升高时，光吸收系数也随之升高。这是因为硼原子填补了非晶硅感光层中的悬挂键，使得非晶硅感光层中形成稳定的硅-硼键，这减少了非晶硅薄膜内的缺陷态和悬挂键，增强了非晶硅薄膜对光子的吸收并产生光电子的能力，保证了在使用较薄非晶硅薄膜作为感光层的同时提升了感光结构的光电流，这能够有效提升探测器的探测量子效率和成像质量。
在一个实施方式中，感光结构还包括有机无机复合介质薄膜223d，有机无机复合介质薄膜223d设置在驱动电极223b与感光层223a之间；有机无机复合介质薄膜223d还设置在感测电极223c与感光层223a之间。有机无机复合介质薄膜223d可以包括无机介质薄膜223d1和有机介质薄膜223d2，无机介质薄膜223d1的材料可以包括SiO2(二氧化硅)或SiNx(氮化硅)，有机介质薄膜223d2的材料可以包括聚酰亚胺(英文：Polyimide；简称：PI)。
光电流和暗电流是感光器件(如感光层)的一种参数，有光照时感光器件中通过的电流称为光电流，无光照时感光器件在外加电压的作用下通过的电流称为暗电流，光暗电流比为光电流与暗电流的比值，该比值越高，感光器件的光电转换效率就越高，由该感光器件制成的X射线探测器的信噪比也就越高。而在感光结构中设置有机无机复合介质薄膜能够降低暗电流，以提高光暗电流比。
在一个实施方式中，有机无机复合介质薄膜223d的厚度为100纳米至300纳米。
在一个实施方式中，感光结构在衬底基板21上的正投影(该正投影的大小可以由感光结构中的感光层223a来决定)和TFT221在衬底基板21上的正投影存在重叠区域，既感光结构和TFT为重叠设置，这样感光结构就可以布满整个探测模块的上表面(上表面可以为接受X射线照射的一面)，极大的提高了感光结构的感光面积。
在一个实施方式中，多个探测模块22中的感光层223a为一体结构，即X射线探测器中多个探测模块22中的感光层223a可以是一整张膜层，这样能够简化感光层的形成过程。
在一个实施方式中，多个探测模块22中有机无机复合介质薄膜223d为一体结构，即X射线探测器中多个探测模块22中的有机无机复合介质薄膜223d可以是连在一起的整张膜层，这样能够简化感光层的形成过程。
在一个实施方式中，感光结构还可以包括金属线223e，金属线223e可以是驱动电极223b以及其他一些电极的走线，用于与外部的电源连接，该外部电源能够通过金属线223e向驱动电极223b施加电压。金属线223e上还可以设置有金属线保护层，该金属线保护层用于防止金属线223e氧化，金属线保护层可以由氧化铟锡(英文：Indium tin oxide；简称：ITO)构成。
在一个实施方式中，闪烁层23的材料可以包括碘化铯(英文：Cesium iodide)，碘化铯是一种对光敏感的材料。闪烁层23可以包括柱状排列的晶体阵列，厚度可以为400微米至1000微米。
在一个实施方式中，闪烁层23和感光层223a之间还可以设置有钝化层(英文：Passivation；简称：PVX)24，该钝化层24可以用于保护感光层223a。
在一个实施方式中，TFT221还包括栅极G和第二电极E2，通过栅极G可以控制TFT221接通或关断，第二电极E2可以与数据线D连接，而数据线D可以与外部的接收组件连接，该接收组件用于接收X射线探测器转化的电荷。不同位置的TFT向外输出的电荷量和不同位置的X射线的剂量是成正比的，这样就能够获知不同位置的X射线的剂量，进而可以得到X射线的数字图像，获得X射线的数字图像的过程可以参考相关技术，在此不再赘述。
在一个实施方式中，TFT221可以为非晶硅TFT或低温多晶硅TFT等。
在一个实施方式中，衬底基板21可以为玻璃基板，硅片或聚酰亚胺塑料基板等。
综上所述，本公开实施例提供的X射线探测器，通过分层设置感光结构和TFT，使得增大感光结构的感光面积时，不会受到TFT的影响。解决现有技术中增大感光层时，X射线探测器的探测精度会降低的问题。达到了能够在不降低X射线探测器的探测精度的情况下，增大感光结构的感光面积的效果。
图4是本公开实施例提供的一种X射线探测器的制造方法的流程图，该方法可以用于制造如图2所示的X射线探测器，该方法包括：
步骤401、在衬底基板上形成多个探测模块，多个探测模块中的任一探测模块包括依次设置的薄膜晶体管TFT、包括过孔的绝缘层和感光结构，TFT中的第一电极通过绝缘层上的过孔和感光结构电连接，第一电极为TFT的源极或漏极。
步骤402、在形成有多个探测模块的衬底基板上形成闪烁层。
综上所述，本公开实施例提供的X射线探测器的制造方法，通过分层设置感光结构和TFT，使得增大感光结构的感光面积时，不会受到TFT的影响。解决现有技术中增大感光层时，X射线探测器的探测精度会降低的问题。达到了能够在不降低X射线探测器的探测精度的情况下，增大感光结构的感光面积的效果。
图5-1是本公开实施例提供的另一种X射线探测器的制造方法的流程图，该方法可以用于制造如图3-1所示的X射线探测器，该方法包括：
步骤501、在衬底基板上形成TFT。
首先可以在衬底基板上形成TFT，该TFT可以为TFT的阵列，可以为每个探测模块形成一个TFT。衬底基板上的TFT可以包括非晶硅TFT和低温多晶硅TFT中的至少一种。TFT中可以包括第一电极、第二电极和栅极。
步骤502、在形成有TFT的衬底基板上形成包括过孔的绝缘层。
可以在形成有TFT的衬底基板上通过构图工艺形成包括过孔的绝缘层，该过孔用 于使绝缘层下方的电极能够与绝缘层上方的感光结构接触。
步骤503、在形成有包括过孔的绝缘层的衬底基板上形成驱动电极和感测电极，感测电极通过绝缘层上的过孔与第一电极电连接。
可以通过磁控溅射法或者溶液法在形成有包括过孔的绝缘层的衬底基板上形成驱动电极和感测电极，感测电极通过绝缘层上的过孔与第一电极电连接。
步骤504、在形成有驱动电极和感测电极的衬底基板上形成有机无机复合介质薄膜。
在形成驱动电极和感测电极后，可以在形成有驱动电极和感测电极的衬底基板上形成有机无机复合介质薄膜。该有机无机复合介质薄膜的厚度可以为100纳米至300纳米，用于降低感光结构的暗电流。
该有机无机复合介质薄膜可以包括无机介质薄膜和有机介质薄膜，无机介质薄膜的材料可以包括SiO2或SiNx，有机介质薄膜的材料可以包括聚酰亚胺。
多个探测模块中的有机无机复合介质薄膜可以为一体结构，该一体结构可以通过步骤504一次形成。
步骤505、在形成有有机无机复合介质薄膜的衬底基板上形成感光层。
如图5-2所示，本步骤可以包括下面3个子步骤：
子步骤5051、在形成有驱动电极和感测电极的衬底基板上形成非晶硅薄膜。
在形成感光层时，首先可以在形成有驱动电极和感测电极的衬底基板上形成非晶硅薄膜。
子步骤5052、对非晶硅薄膜进行硼离子注入。
形成非晶硅薄膜后，可以对非晶硅薄膜进行硼离子注入，注入时的加速电压可以为20kv(千伏)至50kv。注入完成后，非晶硅薄膜中每平方厘米的硼原子个数可以为5×1011至1×1013。
子步骤5053、对进行硼离子注入后的非晶硅薄膜进行低温退火处理，使非晶硅薄膜转变为感光层。
之后可以对进行硼离子注入后的非晶硅薄膜进行低温退火处理，使非晶硅薄膜转变为感光层。低温退火处理的温度为150摄氏度至230摄氏度，时间为1小时至2小时。
多个探测模块中的感光层可以为一整张膜层，该一整张膜层可以通过子步骤5051至子步骤5052一次形成。
可以通过步骤503至步骤505在衬底基板上形成阵列排布的多个探测模块。
步骤506、在形成有多个探测模块的衬底基板上形成闪烁层。
通过步骤503至步骤505在衬底基板上形成了多个探测模块后，可以在形成有多个探测模块的衬底基板上形成闪烁层。闪烁层可以为柱状排列的晶体阵列，材料可以包括碘化铯，厚度可以为400微米至1000微米。
在一个实施方式中，在形成层前可以形成用于保护感光层的钝化层和用于保护X射线探测器中电极走线的金属线保护层。
综上所述，本公开实施例提供的X射线探测器的制造方法，通过分层设置感光结构和TFT，使得增大感光结构的感光面积时，不会受到TFT的影响。解决现有技术中增大感光层时，X射线探测器的探测精度会降低的问题。达到了能够在不降低X射线探测器的探测精度的情况下，增大感光结构的感光面积的效果。
本公开中术语“A和B的至少一种”，仅仅是一种描述关联对象的关联关系，表示可以存在三种关系，例如，A和B的至少一种，可以表示：单独存在A，同时存在A和B，单独存在B这三种情况。同理，“A、B和C的至少一种”表示可以存在七种关系，可以表示：单独存在A，单独存在B，单独存在C，同时存在A和B，同时存在A和C，同时存在C和B，同时存在A、B和C这七种情况。同理，“A、B、C和D的至少一种”表示可以存在十五种关系，可以表示：单独存在A，单独存在B，单独存在C，单独存在D，同时存在A和B，同时存在A和C，同时存在A和D，同时存在C和B，同时存在D和B，同时存在C和D，同时存在A、B和C，同时存在A、B和D，同时存在A、C和D，同时存在B、C和D，同时存在A、B、C和D，这十五种情况。
本领域普通技术人员可以理解实现上述实施例的全部或部分步骤可以通过硬件来完成，也可以通过程序来指令相关的硬件完成，所述的程序可以存储于一种计算机可读存储介质中，上述提到的存储介质可以是只读存储器，磁盘或光盘等。
以上所述仅为本公开的较佳实施例，并不用以限制本公开，凡在本公开的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本公开的保护范围之内。

Claims (15)

  1. 一种X射线探测器，包括：
    衬底基板；
    多个探测模块，设置在所述衬底基板上，所述探测模块包括设置在所述衬底基板上的薄膜晶体管，设置在所述薄膜晶体管上的具有过孔的绝缘层和设置在所述绝缘层上的感光结构，所述薄膜晶体管的第一电极通过所述绝缘层上的过孔和所述感光结构电连接，所述第一电极为所述薄膜晶体管的源极或漏极；以及
    闪烁层，设置在所述探测模块上。
  2. 根据权利要求1所述的X射线探测器，其中，所述感光结构包括感光层、驱动电极和感测电极，所述感测电极通过所述绝缘层上的过孔与所述第一电极电连接，所述驱动电极用于向所述感光层中施加电压，所述感测电极用于接收所述感光层输出的电流。
  3. 根据权利要求2所述的X射线探测器，其中，所述感光层包括轻掺杂的非晶硅感光层。
  4. 根据权利要求3所述的X射线探测器，其中，所述轻掺杂的非晶硅感光层为硼轻掺杂的非晶硅感光层，所述轻掺杂的非晶硅感光层中每平方厘米的硼原子个数为5×1011至1×1013。
  5. 根据权利要求2所述的X射线探测器，其中，所述感光结构还包括有机无机复合介质薄膜，所述有机无机复合介质薄膜设置在所述驱动电极与所述感光层之间；所述有机无机复合介质薄膜还设置在所述感测电极与所述感光层之间。
  6. 根据权利要求5所述的X射线探测器，其中，所述有机无机复合介质薄膜的厚度为100纳米至300纳米。
  7. 根据权利要求1至6任一所述的X射线探测器，其中，所述感光结构在所述衬底基板上的正投影和所述薄膜晶体管在所述衬底基板上的正投影存在重叠区域。
  8. 根据权利要求2所述的X射线探测器，其中，所述多个探测模块中的感光层为一体结构。
  9. 根据权利要求5所述的X射线探测器，其中，所述多个探测模块中有机无机复合介质薄膜为一体结构。
  10. 一种X射线探测器的制造方法，包括：
    在衬底基板上形成多个探测模块，所述探测模块包括设置在所述衬底基板上的薄膜晶体管，设置在所述薄膜晶体管上的具有过孔的绝缘层和设置在所述绝缘层上的感光结构，所述薄膜晶体管中的第一电极通过所述绝缘层上的过孔和所述感光结构电连接，所述第一电极为所述薄膜晶体管的源极或漏极；
    在所述探测模块上形成闪烁层。
  11. 根据权利要求10所述的方法，其中，所述在衬底基板上形成多个探测模块包括：
    在所述衬底基板上形成所述薄膜晶体管；
    在形成有所述薄膜晶体管的衬底基板上形成所述包括过孔的绝缘层；
    在形成有所述包括过孔的绝缘层的衬底基板上形成所述感光结构。
  12. 根据权利要求11所述的方法，其中，所述在形成有所述包括过孔的绝缘层的衬底基板上形成所述感光结构包括：
    在形成有所述包括过孔的绝缘层的衬底基板上形成驱动电极和感测电极，所述感测电极通过所述绝缘层上的过孔与所述第一电极电连接；
    在形成有所述驱动电极和所述感测电极的衬底基板上形成感光层。
  13. 根据权利要求12所述的方法，其中，在形成有所述驱动电极和所述感测电极的衬底基板上形成感光层之前，所述方法还包括：
    在形成有所述驱动电极和所述感测电极的衬底基板上形成有机无机复合介质薄膜；
    所述在形成有所述驱动电极和所述感测电极的衬底基板上形成感光层包括：
    在形成有所述有机无机复合介质薄膜的衬底基板上形成所述感光层。
  14. 根据权利要求12所述的方法，其中，所述在形成有所述驱动电极和所述感测电极的衬底基板上形成感光层包括：
    在形成有所述驱动电极和所述感测电极的衬底基板上形成非晶硅薄膜；
    对所述非晶硅薄膜进行硼离子注入；
    对进行硼离子注入后的所述非晶硅薄膜进行低温退火处理，使所述非晶硅薄膜转变为所述感光层。
  15. 根据权利要求14所述的方法，其中，所述低温退火处理的温度为150摄氏度至230摄氏度，时间为1小时至2小时。
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