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WO2018130300A1 - Système de couches conçu pour être utilisé dans un dispositif électro-optique et procédé de fabrication d'un système de couches dans un procédé rotatif continu - Google Patents

Système de couches conçu pour être utilisé dans un dispositif électro-optique et procédé de fabrication d'un système de couches dans un procédé rotatif continu Download PDF

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Publication number
WO2018130300A1
WO2018130300A1 PCT/EP2017/050692 EP2017050692W WO2018130300A1 WO 2018130300 A1 WO2018130300 A1 WO 2018130300A1 EP 2017050692 W EP2017050692 W EP 2017050692W WO 2018130300 A1 WO2018130300 A1 WO 2018130300A1
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WO
WIPO (PCT)
Prior art keywords
layer
planarization layer
flexible substrate
planarization
transparent conductive
Prior art date
Application number
PCT/EP2017/050692
Other languages
English (en)
Inventor
Neil Morrison
Jose Manuel Dieguez-Campo
Heike Landgraf
Stefan Hein
Tobias Stolley
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Priority to PCT/EP2017/050692 priority Critical patent/WO2018130300A1/fr
Priority to CN201780082571.6A priority patent/CN110168134A/zh
Priority to TW107100379A priority patent/TW201836138A/zh
Publication of WO2018130300A1 publication Critical patent/WO2018130300A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
    • C23C28/042—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material including a refractory ceramic layer, e.g. refractory metal oxides, ZrO2, rare earth oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H10K71/611—Forming conductive regions or layers, e.g. electrodes using printing deposition, e.g. ink jet printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates

Definitions

  • Embodiments of the present disclosure relate to layer systems adapted for use in electro-optical devices and methods for manufacturing such layer systems in a continuous roll-to-roll process.
  • embodiments of the present disclosure relate to layer systems including a stack of layers deposited on a flexible substrate. More specifically, embodiments of the present disclosure relate to layer systems which are manufactured by a continuous roll-to-roll vacuum deposition process.
  • Processing of flexible substrates is in high demand in the packaging industry, semiconductor industries and other industries. Processing may consist of coating a flexible substrate with a desired material, such as a metal, in particular aluminum, semiconductors and dielectric materials, etching and other processing actions conducted on a substrate for the desired applications.
  • Systems performing this task typically include a process drum, e.g., a cylindrical roller, coupled to a processing system for transporting the substrate, and on which at least a portion of the substrate is processed.
  • a process drum e.g., a cylindrical roller
  • R2R roll-to-roll
  • a process e.g. a physical vapor deposition (PVD) process, a chemical vapor deposition (CVD) process, and a plasma enhanced chemical vapor deposition (PECVD) process
  • PVD physical vapor deposition
  • CVD chemical vapor deposition
  • PECVD plasma enhanced chemical vapor deposition
  • PVD physical vapor deposition
  • PVD physical vapor deposition
  • CVD chemical vapor deposition
  • PECVD plasma enhanced chemical vapor deposition
  • Examples of products made of a coated flexible substrate are touch panels or organic light emitting diode (OLED) displays, which have received significant interest recently in display applications in view of their faster response times, larger viewing angles, higher contrast, lighter weight, lower power, and amenability to flexible substrates, as compared to liquid crystal displays (LCD).
  • OLED organic light emitting diode
  • LCD liquid crystal displays
  • a layer system adapted for use in an electro-optical device includes a flexible substrate, a planarization layer provided on the flexible substrate, and a transparent conductive oxide layer provided on the planarization layer.
  • the planarization layer is configured to encapsulate defects on the flexible substrate. Further, the planarization layer is configured to covalently bind to the surface of the flexible substrate.
  • a layer system adapted for use in an electro-optical device includes a flexible substrate, a planarization layer provided on the flexible substrate, and a transparent conductive oxide layer provided on the planarization layer.
  • the planarization layer is configured to encapsulate defects on the flexible substrate. Further, the planarization layer is configured to covalently bind to the surface of the flexible substrate and to promote adhesion of the transparent conductive oxide layer to the planarization layer.
  • the planarization layer has a thickness T PL of 100 nm ⁇ Tp L ⁇ 800 nm and consists of silicon oxycarbide SiO x C y .
  • the transparent conductive oxide layer has a thickness T TC0 of 5 nm ⁇ T TC0 ⁇ 10 nm and consists of silicon oxide SiO x or niobium oxide NbO x .
  • an electro- optical device having a layer system according to any embodiments described herein is provided.
  • a method for manufacturing a layer system in a continuous roll-to-roll process includes providing a flexible substrate to at least one first processing zone and at least one second processing zone without breaking vacuum. Further, the method includes depositing a planarization layer on the flexible substrate in the at least one first processing zone such that defects on the flexible substrate are encapsulated by the planarization layer. Additionally, the method includes depositing a transparent conductive oxide layer on the planarization layer in the at least one second processing zone. In particular, depositing the planarization layer includes forming covalent bonds between the flexible substrate and the planarization layer.
  • Embodiments are also directed at apparatuses for carrying out the disclosed methods and include apparatus parts for performing each described method aspect. These method aspects may be performed by way of hardware components, a computer programmed by appropriate software, by any combination of the two or in any other manner. Furthermore, embodiments according to the disclosure are also directed at methods for operating the described apparatus. The methods for operating the described apparatus include method aspects for carrying out every function of the apparatus. BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1 shows a schematic view of a layer system according to embodiments described herein;
  • FIGS. 2 and 3 show detailed views of a portion of a layer system according to embodiments described herein illustrating the function of the planarization layer
  • FIGS. 4 A to 4C show schematic views of a layer system according to yet further embodiments described herein;
  • FIG. 5 shows a schematic view of a processing system for manufacturing a layer system according to embodiments described herein
  • FIG. 6 shows a schematic view of an electro-optical device having a layer system according to embodiments described herein;
  • FIG. 7 shows a flow chart illustrating a method for manufacturing a layer system in a continuous roll-to-roll process according to embodiments described herein.
  • a "layer system” is to be understood as a stack of layers.
  • a layer system as described herein can be understood as a stack of layers having at least two layers of different material composition.
  • a layer system as described herein can be transparent.
  • transparent as used herein can particularly include the capability of a structure to transmit light with relatively low scattering, so that, for example, light transmitted therethrough can be seen in a substantially clear manner.
  • a "flexible substrate” may be characterized in that the substrate is bendable.
  • the flexible substrate may be a foil.
  • a flexible substrate as described herein can be processed in a continuous roll-to-roll process as described herein, for instance in a roll-to-roll processing system as described herein.
  • the flexible substrate as described herein is suitable for manufacturing coatings or electronic devices on the flexible substrate.
  • a flexible substrate as described herein can be transparent, e.g. the flexible substrate may be made of a transparent polymer material.
  • a flexible substrate as described herein may include materials like polyethylene terephthalate (PET), polycarbonate (PC), polyethylene (PE), polyimide (PI), polyurethane (PU), poly(methacrylic acid methyl ester), triacetyl cellulose, cellulose triacetate (TaC), cyclo olefin polymer, poly(ethylene naphthalate), one or more metals, paper, combinations thereof, and already coated substrates like Hard Coated PET (HC-PET) or Hard Coated TAC (HC-TAC) and the like.
  • PET polyethylene terephthalate
  • PC polycarbonate
  • PE polyethylene
  • PI polyimide
  • PU polyurethane
  • PU poly(methacrylic acid methyl ester)
  • TaC cyclo olefin polymer
  • HC-PET Hard Coated PET
  • HC-TAC Hard Coated TAC
  • a planarization layer is to be understood as a layer which is configured to encapsulate defects and fill scratches of the substrate or layer onto which the planarization layer is deposited. Accordingly, a planarization layer is to be understood as a layer configured for providing a significantly smoothened surface for a subsequent processing action, particularly a subsequent layer deposition on the planarization layer.
  • a planarization layer as described herein can be transparent.
  • the planarization layer can be configured to improve adhesion to the substrate or layer onto which the planarization layer is deposited. For instance, the planarization layer can be configured to chemically bind, e.g.
  • the planarization layer as described herein is deposited by using a CVD process, for instance a PECVD process or a HWCVD (Hot Wire Chemical Vapor Deposition) process.
  • a CVD process for instance a PECVD process or a HWCVD (Hot Wire Chemical Vapor Deposition) process.
  • HWCVD Hot Wire Chemical Vapor Deposition
  • the mechanical properties of the planarization layer as described herein can be adapted to the mechanical properties of the flexible substrate as described herein.
  • the flexibility, e.g. the E-modulus, of the planarization layer can be adapted to the mechanical properties of the flexible substrate.
  • a "transparent conductive oxide layer” is to be understood as a layer of optically transparent and electrically conductive material.
  • FIG. 1 shows a schematic view of a layer system 100 according to embodiments described herein.
  • the layer system 100 is adapted for use in an electro-optical device.
  • the layer system 100 includes a flexible substrate 101, a planarization layer 110 provided on the flexible substrate 101, and a transparent conductive oxide layer 120 provided on the planarization layer 110.
  • the flexible substrate 101 can include a polymer material selected from the group consisting of: polycarbonate, polyethylene terephthalate, poly(methacrylic acid methyl ester), triacetyl cellulose, cyclo olefin polymer, and poly(ethylene naphthalate).
  • the planarization layer 110 is configured to encapsulate defects on the flexible substrate 101. Further, the planarization layer is configured to covalently bind to the surface of the flexible substrate.
  • a layer system which has an improved structural stability compared to conventional layer systems. Further, the quality of the layer system as described herein is improved since the planarization layer is configured to encapsulate defects and fill scratches of the substrate onto which the planarization layer is deposited. Accordingly, a significantly smoothened surface for a subsequent processing action, particularly for a subsequent layer deposition process, can be obtained.
  • electro-optical devices e.g. display devices or touch panels
  • the quality as well as the product durability of the electro-optical devices can be improved.
  • the planarization layer 110 can have a thickness T PL of 100 nm ⁇ T PL ⁇ 800 nm.
  • the thickness T PL of the planarization layer 110 can be selected from a range having a lower limit of 100 nm, particularly a lower limit of 200 nm, more particularly a lower limit of 300 nm and an upper limit of 600 nm, particularly an upper limit of 700 nm, more particularly an upper limit of 800 nm.
  • the overall layer system quality can be improved. For instance, as the thickness T PL of the planarization layer is increased, defects on the substrate (e.g. scratches or particles) can be smoothened out more effectively.
  • the mechanical properties of the planarization layer can be adapted to the mechanical properties of the flexible substrate.
  • the flexibility, e.g. the E-modulus, of the planarization layer can be adapted to the mechanical properties of the flexible substrate.
  • the structural stability of the layer system as described herein can be improved, since the planarization layer can follow a deformation of the flexible substrate.
  • FIGS. 2 and 3 show detailed views of a portion of a layer system 100 according to embodiments described herein for illustrating the function of the planarization layer 110.
  • FIG. 2 shows a layer system including a defect structure D on the surface of the flexible substrate 101
  • FIG. 3 shows a layer system having a particle P on the surface of the flexible substrate 101.
  • T PL [nm] (1- (T TC0 /h d ) x the overall layer system quality can be improved.
  • defects e.g. scratches or particles
  • a thickness T TC0 of the transparent conductive oxide layer 120 can be 5 nm ⁇ T T co ⁇ 100 nm.
  • the thickness T T co of the transparent conductive oxide layer 120 can be selected from a range having a lower limit of 5 nm, particularly a lower limit of 10 nm, particularly a lower limit of 20 nm, more particularly a lower limit of 40 nm and an upper limit of 60 nm, particularly an upper limit of 80 nm, more particularly an upper limit of 100 nm.
  • the planarization layer 110 is further configured to promote adhesion of the transparent conductive oxide layer 120 to the planarization layer 110.
  • a configuration of the planarization layer for promoting adhesion to the transparent conductive oxide layer can be obtained by a planarization layer having a material composition as described herein.
  • the transparent conductive oxide layer 120 may include at least one material selected from the group consisting of silicon oxide SiO x , niobium oxide NbO x and indium tin oxide ITO.
  • the transparent conductive oxide layer 120 may consist of at least one material selected from the group consisting of silicon oxide SiO x , niobium oxide NbO x and indium tin oxide ITO.
  • the planarization layer 110 includes silicon oxycarbide SiO x C y .
  • the planarization layer 110 consists of silicon oxycarbide SiO x C y .
  • the planarization layer is configured to covalently bind to the surface of the flexible substrate as described herein, which is beneficial for improving the structural stability of the layer system.
  • a planarization layer including silicon oxycarbide SiO x C y can be beneficial for promoting adhesion to the transparent conductive oxide layer deposited on the planarization layer.
  • the layer system further comprises a layer stack 130 provided on the planarization layer 110.
  • the layer stack 130 comprises a first layer 131 of niobium oxide (NbO x ), a second layer 132 of silicon oxide (SiO x ) and a third layer 133 of indium tin oxide (ITO), as exemplarily shown in FIG. 4B.
  • the first layer 131 may consist of niobium oxide (NbO x )
  • the second layer 132 may consist of silicon oxide (SiO x )
  • the third layer 133 may consist of indium tin oxide (ITO).
  • the first layer 131 may have a thickness T 1 of 5 nm ⁇ T 1 ⁇ 10 nm.
  • the thickness T 1 of the first layer 131 can be selected from a range having a lower limit of 5 nm, particularly a lower limit of 6 nm, more particularly a lower limit of 7 nm and an upper limit of 8 nm, particularly an upper limit of 9 nm, more particularly an upper limit of lO nm.
  • the second layer 132 may have a thickness T 2 of 40 nm ⁇ T 2 ⁇ 80 nm.
  • the thickness T 2 of the second layer 132 can be selected from a range having a lower limit of 40 nm, particularly a lower limit of 45 nm, more particularly a lower limit of 50 nm and an upper limit of 60 nm, particularly an upper limit of 70 nm, more particularly an upper limit of 80 nm.
  • the third layer 133 may have a thickness T 3 of 20 nm ⁇ T 3 ⁇ 60 nm.
  • the thickness T 3 of the third layer 133 can be selected from a range having a lower limit of 20 nm, particularly a lower limit of 25 nm, more particularly a lower limit of 30 nm and an upper limit of 40 nm, particularly an upper limit of 50 nm, more particularly an upper limit of 60 nm.
  • the layer stack 130 may include a fourth layer 134 provided between the flexible substrate 101 and the first layer 131.
  • the fourth layer 134 may have a thickness T 4 of 5 nm ⁇ T 2 ⁇ 10 nm.
  • the thickness T 4 of the fourth layer 134 can be selected from a range having a lower limit of 5 nm, particularly a lower limit of 6 nm, more particularly a lower limit of 7 nm and an upper limit of 8 nm, particularly an upper limit of 9 nm, more particularly an upper limit of 10 nm.
  • the fourth layer can consist of silicon oxide SiO x .
  • Providing a layer system with a layer stack 130 as described herein can be beneficial for enhancing the optical performance of the layer system compared to conventional layer structures, particularly for use in electro-optical devices such as OLED displays.
  • the layer stack as described herein can be beneficial for optical matching of the layers of the layer system, e.g. for obtaining a layer system with antireflective properties.
  • the first layer 131 and/or the second layer 132 and/or the third layer 133 and/or the fourth layer 134 can be deposited using a physical vapor deposition (PVD) process.
  • PVD physical vapor deposition
  • the layer system 100 adapted for use in an electro-optical device includes a flexible substrate 101, a planarization layer 110 provided on the flexible substrate 101, and a transparent conductive oxide layer 120 provided on the planarization layer 110.
  • the planarization layer is configured to encapsulate defects on the flexible substrate. Further, the planarization layer is configured to covalently bind to the surface of the flexible substrate and to promote adhesion of the transparent conductive oxide layer to the planarization layer.
  • the planarization layer has a thickness T PL of 100 nm ⁇ T PL ⁇ 800 nm and consists of silicon oxycarbide SiO x C y .
  • the transparent conductive oxide layer has a thickness T TC o of 5 nm ⁇ T TC o ⁇ 10 nm and consists of silicon oxide SiOx or niobium oxide NbO x .
  • the layer system is well suited for being manufactured in a continuous roll-to-roll process, particularly a continuous vacuum deposition roll-to-roll process.
  • FIG. 5 shows a roll-to-roll processing system configured for carrying out a method for manufacturing a layer system in a continuous roll-to-roll process as exemplarily described in more detail with reference to FIG. 7.
  • the processing system 300 can include at least three chamber portions, such as a first chamber portion 302 A, a second chamber portion 302B and a third chamber portion 302C.
  • one or more deposition sources 630 and optionally an etching station 430 can be provided as processing tools.
  • a substrate e.g. a flexible substrate 101 as described herein, is provided on a first roll 764, e.g. having a winding shaft. The flexible substrate is unwound from the first roll 764 as indicated by the substrate movement direction shown by arrow 108.
  • a separation wall 701 is provided for separation of the first chamber portion 302 A and the second chamber portion 302B.
  • the separation wall 701 can further be provided with gap sluices 740 to allow the flexible substrate 101 to pass therethrough.
  • a vacuum flange 312 provided between the second chamber portion 302B and the third chamber portion 302C can be provided with openings to take up at least some processing tools.
  • the flexible substrate 101 is moved through the deposition areas provided at a coating drum 710 and corresponding to positions of the deposition sources 630.
  • the coating drum 710 rotates around an axis such that the flexible substrate 101 moves in the direction of arrow 108.
  • the flexible substrate 101 is guided via one, two or more rollers from the first roll 764 to the coating drum 710 and from the coating drum 710 to the second roll 764', e.g. having a winding shaft, on which the flexible substrate 101 is wound after processing thereof.
  • the deposition sources 630 can be configured for depositing the layers as described herein.
  • at least one deposition source can be adapted for deposition of the planarization layer 110 and at least one deposition source can be adapted for deposition of the transparent conductive oxide layer 120.
  • deposition sources may be provided for depositing a layer stack 130 as described herein.
  • the first chamber portion 302A is separated in an interleaf chamber portion unit 302A1 and a substrate chamber portion unit 302A2.
  • interleaf rolls 766/766' and interleaf rollers 305 can be provided as a modular element of the processing system 300.
  • the processing system 300 can further include a pre-heating unit 394 to heat the flexible substrate.
  • a pre-treatment plasma source 392 e.g. an RF (radio frequency) plasma source can be provided to treat the substrate with a plasma prior to entering the third chamber portion 302C.
  • an optical measurement unit 494 for evaluating the result of the substrate processing and/or one or more ionization units 492 for adapting the charge on the substrate can be provided.
  • the deposition material may be chosen according to the deposition process and the later application of the coated substrate.
  • the deposition material of the deposition sources may be selected according to the respective material of the planarization layer, transparent conductive oxide layer, and the individual layers of the layer stack as described herein.
  • an electro-optical device 150 having a layer system 100 according to any embodiments described herein is provided. Accordingly, it is to be understood that layer systems as described herein can beneficially be used in optical applications, for instance for OLEDs, in order to improve the structural stability of the electro-optical device in which the layer system as described herein is employed.
  • the method 200 includes providing (see block 210) a flexible substrate to at least one first processing zone and at least one second processing zone without breaking vacuum. Further, the method 200 includes depositing (see block 220) a planarization layer on the flexible substrate in the at least one first processing zone such that defects on the flexible substrate are encapsulated by the planarization layer. Additionally, the method 200 includes depositing (see block 230) a transparent conductive oxide layer on the planarization layer in the at least one second processing zone. In particular, depositing the planarization layer includes forming covalent bonds between the flexible substrate and the planarization layer.
  • depositing (block 220) the planarization layer and depositing (block 230) the transparent conductive oxide layer includes using a PECVD process and/or a HWCVD process.
  • the planarization layer and/or the transparent conductive oxide layer and/or the layer stack as described herein may be deposited using a low temperature microwave PECVD process.
  • depositing (block 220) the planarization layer can include using at least one precursor selected from the group consisting of: HMDSO Hexamethyldisiloxane; TOMCAT Tetramethyl Cyclotetrasiloxane (C 4 Hi 6 0 4 Si 4 ); HMDSN Hexamethyldisilazane ([(CH 3 ) 3 Si] 2 NH); and TEOS Tetraethyl Orthosilicate (Si(OC 2 H 5 ) 4 ).
  • depositing (block 230) the transparent conductive oxide layer may also include using at least one precursor selected from the group consisting of: HMDSO Hexamethyldisiloxane; TOMCAT Tetramethyl Cyclotetrasiloxane (C 4 H 16 0 4 Si 4 ); HMDSN Hexamethyldisilazane ([(CH 3 ) 3 Si] 2 NH); and TEOS Tetraethyl Orthosilicate (Si(OC 2 H 5 ) 4 ).
  • depositing (block 220) the planarization layer and depositing (block 230) the transparent conductive oxide layer can include using the same precursor.
  • depositing the planarization layer can further include using at least one agent selected from the group consisting of: peroxides as initiators, particularly TBPO (tert-butyl peroxide); acrylate monomers, particularly ethyl-hexyl acrylate; and a crosslinking agent, particularly BDDA (butanediol-diacrylate).
  • peroxides as initiators
  • TBPO tert-butyl peroxide
  • acrylate monomers particularly ethyl-hexyl acrylate
  • BDDA butanediol-diacrylate

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Abstract

L'invention concerne un système de couches (100) conçu pour être utilisé dans un dispositif électro-optique. Le système de couches comprend un substrat souple (101), une couche de planarisation (110) disposée sur le substrat souple (101) et une couche d'oxyde conducteur transparent (120) disposée sur la couche de planarisation (110), la couche de planarisation (110) étant conçue pour encapsuler des défauts sur le substrat flexible (101), et la couche de planarisation étant conçue pour se lier de manière covalente à la surface du substrat souple.
PCT/EP2017/050692 2017-01-13 2017-01-13 Système de couches conçu pour être utilisé dans un dispositif électro-optique et procédé de fabrication d'un système de couches dans un procédé rotatif continu WO2018130300A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
PCT/EP2017/050692 WO2018130300A1 (fr) 2017-01-13 2017-01-13 Système de couches conçu pour être utilisé dans un dispositif électro-optique et procédé de fabrication d'un système de couches dans un procédé rotatif continu
CN201780082571.6A CN110168134A (zh) 2017-01-13 2017-01-13 适用于使用在光电装置中的层系统以及用于以连续卷绕式工艺制造层系统的方法
TW107100379A TW201836138A (zh) 2017-01-13 2018-01-04 適用於使用在光電裝置中的層系統、具有其之光電裝置、以及在連續捲繞式製程中製造層系統的方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2017/050692 WO2018130300A1 (fr) 2017-01-13 2017-01-13 Système de couches conçu pour être utilisé dans un dispositif électro-optique et procédé de fabrication d'un système de couches dans un procédé rotatif continu

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WO2018130300A1 true WO2018130300A1 (fr) 2018-07-19

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CN (1) CN110168134A (fr)
TW (1) TW201836138A (fr)
WO (1) WO2018130300A1 (fr)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150380685A1 (en) * 2014-06-25 2015-12-31 Lg Display Co., Ltd. Organic light emitting display apparatus
US20160056414A1 (en) * 2014-08-21 2016-02-25 Universal Display Corporation Thin film permeation barrier system for substrates and devices and method of making the same
US20160093829A1 (en) * 2014-09-30 2016-03-31 Lg Display Co., Ltd. Organic light emitting display device and method for manufacturing the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150380685A1 (en) * 2014-06-25 2015-12-31 Lg Display Co., Ltd. Organic light emitting display apparatus
US20160056414A1 (en) * 2014-08-21 2016-02-25 Universal Display Corporation Thin film permeation barrier system for substrates and devices and method of making the same
US20160093829A1 (en) * 2014-09-30 2016-03-31 Lg Display Co., Ltd. Organic light emitting display device and method for manufacturing the same

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Publication number Publication date
TW201836138A (zh) 2018-10-01
CN110168134A (zh) 2019-08-23

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