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WO2018130408A1 - Module de puissance à disposition de broche optimisée - Google Patents

Module de puissance à disposition de broche optimisée Download PDF

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Publication number
WO2018130408A1
WO2018130408A1 PCT/EP2017/084356 EP2017084356W WO2018130408A1 WO 2018130408 A1 WO2018130408 A1 WO 2018130408A1 EP 2017084356 W EP2017084356 W EP 2017084356W WO 2018130408 A1 WO2018130408 A1 WO 2018130408A1
Authority
WO
WIPO (PCT)
Prior art keywords
power module
potential
pins
level power
pin
Prior art date
Application number
PCT/EP2017/084356
Other languages
English (en)
Inventor
Ole MÜHLFELD
Guido Mannmeusel
Jörg BERGMANN
Original Assignee
Danfoss Silicon Power Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Danfoss Silicon Power Gmbh filed Critical Danfoss Silicon Power Gmbh
Publication of WO2018130408A1 publication Critical patent/WO2018130408A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
    • H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
    • H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/483—Converters with outputs that each can have more than two voltages levels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
    • H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
    • H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/483—Converters with outputs that each can have more than two voltages levels
    • H02M7/487—Neutral point clamped inverters

Definitions

  • the present disclosure relates to a power module, and more particularly, to a three-level power module with optimized pin layout.
  • a power module may be used for the controlled switching of high currents and can be used in power converters (such as inverters) to convert DC to AC or vice versa, or for converting between different voltages or frequencies of AC.
  • power converters such as inverters
  • inverters are used in motor controllers or interfaces between power generation or storage, or a power distribution grid.
  • a power module may be used in a "grid tie" inverter of a battery storage system. In such a battery storage system, current is supplied to a power supply grid either to stabilize the grid or to provide electrical power during times where the grid electric energy is expensive, i.e. in the morning and in the afternoon.
  • the batteries are recharged during night-time when grid energy cost is lower, or they can be recharged using solar power. Overall, the system helps the customer to reduce expenses for electrical energy.
  • the "grid tie” inverter connects the battery storage system to the grid and has the task to convert the DC voltage of the battery to AC voltage for the grid and vice versa.
  • a three-level power module comprises sets of one or more pins which are suitable for connecting to a positive Direct Current (DC) potential, a negative DC potential and a neutral potential, wherein at least one of pins suitable for connecting to the positive DC potential and at least one of pins suitable for connecting to the negative DC potential are each placed adjacent to a pin suitable for connecting to the neutral potential.
  • DC Direct Current
  • three level indicates that DC power is connected to the power module through connections carrying a positive voltage, a negative voltage and, in addition a third connection carrying an intermediate voltage (neutral), where the positive voltage is at a potential higher than that of the negative voltage, and the neutral connection is at a potential that is between the positive and negative voltages, and may be at zero potential in some embodiments.
  • inverter systems may use ⁇ 400 Volt, and a power supply to such an inverter comprises a positive voltage of +400V, a negative voltage of -400V, and also a neutral of OV.
  • the neutral may be tied to ground.
  • At least one pin of the positive DC potential is placed on a first side of the three-level power module and at least one pin of the negative DC potential is placed on a second side of the three-level power module opposite to the first side, and wherein at least one pin of the neutral potential is placed adjacent to the at least one pin of the positive DC potential on the first side and at least one pin of the neutral potential is placed adjacent to the at least one pin of the negative DC potential on the second side.
  • a first side that is opposite to a second side is meant that if the first side is, for example, one of the long sides of a rectangular power module then the second side is the other long side of the power module, or if the first side is one of the short sides of the power module then the second side is the other short side of the power module.
  • a pin placed adjacent to a pin on the same side means that the pins are placed at one and the same side of the power module, and next to each other. In an embodiment, the number of pins of each of the potentials that are placed adjacent to each other is higher than that needed for current carrying capability.
  • the number of pins of each of the potentials that are placed adjacent to each other is twice that needed for current carrying capability. In an embodiment, there are four pins for each of the positive DC potential, the negative DC potential and the neutral potential.
  • two pins of the neutral potential are placed adjacent to the four pins of the positive DC potential on the first side of the three-level power module, and two pins of the neutral potential are placed adjacent to the four pins of the negative DC potential on the second side of the three-level power module.
  • the first side is opposite to the second side.
  • the three-level power module further comprises at least one substrate on which one or more semiconductor switches are mounted, wherein the one or more semiconductor switches comprise wide-bandgap semiconductors.
  • the wide-bandgap semiconductors comprise Silicon Carbide semiconductor switches.
  • the SiC semiconductor switches comprise SiC
  • MOSFETs Metal-Oxide-Semiconductor Field Effect Transistors
  • the three-level power module comprises a Neutral Point Clamped-1 (NPC1 ) topology.
  • NPC1 Neutral Point Clamped-1
  • the NPC1 topology is a known topology for three-level inverter circuits and comprises four switches in series between the positive and negative DC power lines. It is further described below.
  • the three-level power module comprises a NPC2 topology.
  • the NPC2 topology is a known topology for three-level inverter circuits and comprises two switches in series between the positive and negative DC power lines, and the load connection comprising the connection between these switches.
  • two further switches as a bi-directional switch, lie between the load connection and the neutral power line. It is also further described below.
  • the at least one substrate comprises a Direct Bonded Copper (DBC) substrate.
  • DBC Direct Bonded Copper
  • Such a substrate is formed by a copper/ceramic/copper sandwich, where a circuit structure may be created in the upper copper layer and which may be populated with semiconductor switches, capacitors and/or resistors as required to form a functioning circuit.
  • Fig. 1 shows a cross section view of a power module according to an embodiment of the present disclosure
  • Fig. 2 shows a perspective view of the power module according to the
  • Fig. 3 shows a view of a power module with lid placed according to an
  • Fig. 4 shows a symbolic representation of a power module with IGBT/Diode combination in an NPC1 three-level topology
  • Fig. 5 shows a symbolic representation of a power module with IGBT/Diode combination in an NPC2 three-level topology
  • Fig. 6 shows a symbolic representation of a power module with SiC-MOSFETs in an NPC1 three-level topology
  • Fig. 7 shows a symbolic representation of a power module with SiC-MOSFETs in an NPC2 three-level topology
  • Fig. 8 shows a top view of an exemplary power module according to an
  • Fig. 9 shows a comparison of two power modules with different pin layouts
  • Fig. 10 shows a diagram of a circuit comprising a set of parallel inductors
  • Fig. 11 shows an example of a power module according to an embodiment of the present disclosure
  • Fig. 12 shows the view of the current paths in the power module shown in Fig. 11 .
  • first and second etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a first element could be termed a second element, and similarly, a second element could be termed a first element, without departing from the scope of example embodiments.
  • the term “and/or” includes any and all combinations of one or more of the associated listed terms.
  • Fig. 1 shows a cross section view of a power module 100 according to an embodiment of the present disclosure
  • Fig. 2 shows a perspective view of the power module according to the embodiment of the present disclosure
  • the power module 100 according to an embodiment of the present disclosure comprises a copper baseplate 110 with two substrates 120 soldered on top of it.
  • Direct Bonded Copper (DBC) substrates are used in the power module 100.
  • the DBC substrates are formed by a sandwich of Cu 122 (for example, of 300 ⁇ ), Ceramics 124 (for example, AIN of 320 ⁇ ) and Cu 126 (for example, of 300 ⁇ ) where in the upper Cu layer 122 a circuit structure can be found that holds semiconductor switches 130, capacitors 150 and gate resistors 140.
  • Aluminum bond wires 160 are used for the top-side connection of the die and for
  • the power module 100 is encapsulated with a molded plastic frame 170 (holding the press-fit contact pins). It is filled with Silicone-gel 180. The frame is fixed by metal bushings 230. The power module 100 is closed by a plastic lid 300. Fig. 3 shows a view of the power module 100 with lid 300 in place.
  • the semiconductor switches, resistors and capacitors are soldered to the DBC substrate. Afterwards the substrate is pre-tested. The tested DBC is then soldered to a 3mm thick copper baseplate covered with nickel plating. Afterwards the plastic frame is mounted; this is done by bonding the frame to the baseplate using silicone glue. In addition, the frame and the base plate are fixed by metal bushings. Afterwards the pins and the substrates are connected in a second bonding step with bond wires. In the final step the module is filled with silicone-gel, the lid is mounted and the module is tested in regards to secure the electrical function. The soldering steps may be combined into a single soldering step in order to save process complexity and hence cost.
  • the power module is designed to fulfill two major characteristics: High power conversion efficiency and high power density. Factors as lifetime, cost and quality are also taken into account.
  • a three-level topology is used. By using a three-level topology, less external components (i.e. filters) are needed because the sine-waveform is reproduced better.
  • the overall system efficiency increases.
  • Fig. 4 shows a symbolic representation of a power module 400 with conventional Silicon technology (mainly IGBT/Diode combination) in a Neutral Point Clamped (NPC)1 three-level topology.
  • Fig. 5 shows a similar symbolic representation of a power module 500 with conventional Silicon technology (mainly IGBT/Diode combination) in an NPC2 three-level topology. As shown, there are additional freewheeling diodes D1 , D4, D5 and D6. The configurations require the discrete diode components in accompany with each of the semiconductor switches T1 ⁇ 4.
  • high performance wide-bandgap semiconductors such as Silicon Carbide (SiC) semiconductor switches may be used, as they generally outperform standard silicon based components, i.e. Insulated Gate Bipolar
  • IGBT IGBT
  • the wide-bandgap semiconductors e.g., SiC semiconductor switches
  • the wide-bandgap semiconductors for example SiC
  • MOSFETs Metal-Oxide-Semiconductor Field Effect Transistors
  • the three-level topology may make use of the MOSFET intrinsic body diode, and thus no additional Si or SiC freewheeling diode is needed as it is the case in IGBT based three-level power module. Moreover, the SiC MOSFET needs less space on the substrate compared to equal rated IGBT. Therefore, higher power densities are possible.
  • Fig. 6 shows a symbolic representation of a power module 600 with
  • FIG. 7 shows a similar symbolic representation of a power module 700 with Sic-MOSFETs in an NPC2 three-level topology. As shown, no additional freewheeling diodes are required in either power module.
  • the numerals 1-24 in the figure denote pin reference numbers of the power module.
  • Fig. 7 also shows that the semiconductors in the power module 700 form an NPC-2 topology circuit, which is split over the two substrates, DBC1 and DBC2.
  • DBC1 holds a half-bridge circuit comprising T1 and T4, and DBC2 holds a bi-directional switch circuit comprising T2 and T3. That is, DBC1 holds two semiconductors that are connected in series between the positive and negative terminals of the power module, and the connection between T1 andT4 is connected to the load terminal of the power module.
  • DBC2 holds two
  • Fig. 8 shows a top view of an exemplary power module 800 according to an embodiment of the present disclosure.
  • T1-T4 are doubled compared with those shown in Fig. 7.
  • DBC1 holds T1 and T4
  • DBC2 holds T2 and T3.
  • each transistor in Fig. 7 is realized by two transistors in parallel in Fig. 8. Similar as Fig. 7, the bond wires ringed denote the connection between the two DBC substrates.
  • the numerals 1- 26 in the figure denote pin reference numbers of the power module.
  • Any current path in an electrical component such as a power module unavoidably has an inductance.
  • Such parasitic inductances store energy, and have the effect of keeping the current constant by the use of this stored energy, as is well known in the field. This effect acts strongly against fast switching, since it prevents fast changes in current. It is therefore very important to reduce the amount of parasitic inductances if fast switching is desired.
  • the current circuits within a power module comprising the copper tracks, wire bonds and terminal connections, all contribute to parasitic inductance, and so great care needs to be taken when laying out such connections.
  • the inductance is formed by a current flowing in a "loop" formed by conductors. The smaller the commutation loop for the current, the smaller is the inductance.
  • the commutation loop of the current is reduced, which reduces the stray inductance in the power module.
  • the at least one pin for the positive DC potential is placed adjacent to the pin for the neutral potential.
  • Fig. 9 shows a comparison of two power modules with different pin layouts.
  • the stray inductance is low as the commutation loop spanned by the conductors is small.
  • the commutation loop shown in Fig. 9(b) has a longer loop line, and thus the power module has higher inductance, which will lead to a reduced module performance.
  • Fig. 9(a) shows a comparison of two power modules with different pin layouts.
  • the stray inductance is low as the commutation loop spanned by the conductors is small.
  • the commutation loop shown in Fig. 9(b) has a longer loop line, and thus the power module has higher inductance, which will lead to a reduced module performance.
  • the pin of the positive DC potential is placed one side while the pin of the negative DC potential is placed at another side opposite to the side for the pin of the positive DC terminal and at least a pin of the neutral potential is placed adjacent to the pin of the positive DC potential at the same side as the pin of the positive DC potential, and at least a pin of the neutral potential is placed adjacent to the pin of the negative DC potential at the same side as the pin of the negative DC potential.
  • Li-L N denote the inductance of each of the inductors L1-Ln.
  • the number of pins of each of the potentials is higher than that needed for current carrying capability.
  • the number of possible paths for the DC current is increased by having more than one pin for each potential. That is, for the positive DC potential, neutral potential and negative DC potential of the power module, each potential comprises more than one pin.
  • the number of pins is usually chosen to take the required current. The calculation depends upon the type of pin required. For example for a press-fit pin a maximum of 40A per pin is usually allowed. For soldered pins it can be slightly higher, for example 45-50A.
  • the embodiment illustrated in Fig. 11 uses press-fit pins. In this embodiment where the maximum expected current is 80 A, two pins would normally be used. However, increasing this number to four pins per power potential the stray inductance of the pins is reduced by around 50%. This follows from the equation (1 ) shown above, where increasing the number of paths decreases the stray inductance.
  • the main design consideration is generally to reduce the current loading of any one pin so that the lifetime of that pin and connections made to it, normally limited by the thermal cycling effects due to high currents, is designed to be greater than the lifetime limit imposed by other parts of the power module design.
  • This design consideration often results in two pins, in order to carry the current over the full lifetime.
  • this pin number is increased to be larger than two, which increases the possible number of current paths.
  • the number of pins is double, i.e., increased from two to four, which will reduce the stray inductances by about 50%.
  • Fig. 11 shows an example of a power module according to an embodiment of the present disclosure.
  • each of the positive DC potential and the negative DC potential has four pins (pins 19-22 for the positive DC potential and pins 3-6 for the negative DC potential), and pins of the positive DC potential are on the opposite side of the power module to pins of the negative DC potential.
  • pins 19-22 for the positive DC potential and pins 3-6 for the negative DC potential
  • pins of the positive DC potential are on the opposite side of the power module to pins of the negative DC potential.
  • pins for the neutral potential In order to minimize the commutation loop there are two pins for the neutral potential on each side of the power module. That enables the power module to have a very short commutation loop between positive DC potential and neutral potential and also between negative DC potential and neutral potential.
  • Fig. 12 shows the view of the current paths in the power module shown in Fig. 11 , where the left one shows the current paths between the neutral potential and the negative DC potential and the right one shows the current paths between the
  • DC-link capacitor and the power module within a power inverter leads to very low stray inductances. With low stray inductances, switching speed can be increased. With increased switching speed the efficiency is higher. This is particular important for some applications, particularly for inverters.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Inverter Devices (AREA)

Abstract

La présente invention concerne un module de puissance à trois niveaux comprenant des ensembles d'une ou de plusieurs broches qui sont appropriées pour se connecter à un potentiel de courant continu (CC) positif, à un potentiel CC négatif et à un potentiel neutre, au moins l'une des broches appropriées pour se connecter au potentiel CC positif et au moins l'une des broches appropriées pour se connecter au potentiel CC négatif étant chacune placées adjacentes à une broche appropriée pour se connecter au potentiel neutre.
PCT/EP2017/084356 2017-01-12 2017-12-22 Module de puissance à disposition de broche optimisée WO2018130408A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102017100528.5A DE102017100528A1 (de) 2017-01-12 2017-01-12 Leistungsmodul mit optimierter Anschlussstiftanordnung
DE102017100528.5 2017-01-12

Publications (1)

Publication Number Publication Date
WO2018130408A1 true WO2018130408A1 (fr) 2018-07-19

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PCT/EP2017/084356 WO2018130408A1 (fr) 2017-01-12 2017-12-22 Module de puissance à disposition de broche optimisée

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DE (1) DE102017100528A1 (fr)
WO (1) WO2018130408A1 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112928073A (zh) * 2021-04-20 2021-06-08 沈阳益峰电器有限责任公司 一种igbt功率模块装置及制造方法
CN113097196A (zh) * 2021-05-14 2021-07-09 沈阳益峰电器有限责任公司 一种多组并联的大电流igbt功率模块装置及制造方法
EP4443735A1 (fr) * 2023-04-06 2024-10-09 Hamilton Sundstrand Corporation Convertisseur de puissance multiniveau
WO2025103056A1 (fr) * 2023-11-17 2025-05-22 比亚迪股份有限公司 Dispositif à semi-conducteur de puissance, chargeur monté sur véhicule et véhicule

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5811878A (en) * 1996-07-09 1998-09-22 Asea Brown Boveri Ag High-power semiconductor module
US20160192495A1 (en) * 2014-12-25 2016-06-30 Fuji Electric Co., Ltd. Semiconductor device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19522172C1 (de) * 1995-06-19 1996-11-21 Siemens Ag Leistungs-Halbleitermodul mit Anschlußstiften
US7944042B2 (en) * 2007-03-08 2011-05-17 Fuji Electric Device Technology Co., Ltd. Semiconductor device and method of manufacturing same
ATE528856T1 (de) * 2009-06-19 2011-10-15 Vincotech Holdings S A R L Leistungsmodul mit zusätzlichem transientem strompfad und leistungsmodulsystem
CN103125022B (zh) * 2010-07-01 2016-01-20 三菱电机株式会社 功率半导体模块、电力转换装置和铁路车辆
DE102012217905B3 (de) * 2012-10-01 2013-11-07 Semikron Elektronik Gmbh & Co. Kg 3-Level-Stromrichterhalbbrücke
US8847328B1 (en) * 2013-03-08 2014-09-30 Ixys Corporation Module and assembly with dual DC-links for three-level NPC applications
DE202016102722U1 (de) * 2016-05-23 2016-06-20 Danfoss Silicon Power Gmbh Umrichteranordnung

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5811878A (en) * 1996-07-09 1998-09-22 Asea Brown Boveri Ag High-power semiconductor module
US20160192495A1 (en) * 2014-12-25 2016-06-30 Fuji Electric Co., Ltd. Semiconductor device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
FUJI ET AL: "IGBT Module Series for Advanced-NPC Circuits", FUJI ELECTRIC REVIEW (VOL. 58, NO. 2), 20 May 2012 (2012-05-20), pages 50 - 54, XP055459074, Retrieved from the Internet <URL:https://www.fujielectric.com/company/tech/pdf/58-02/FER-58-2-050-2012.pdf> [retrieved on 20180313] *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112928073A (zh) * 2021-04-20 2021-06-08 沈阳益峰电器有限责任公司 一种igbt功率模块装置及制造方法
CN113097196A (zh) * 2021-05-14 2021-07-09 沈阳益峰电器有限责任公司 一种多组并联的大电流igbt功率模块装置及制造方法
EP4443735A1 (fr) * 2023-04-06 2024-10-09 Hamilton Sundstrand Corporation Convertisseur de puissance multiniveau
WO2025103056A1 (fr) * 2023-11-17 2025-05-22 比亚迪股份有限公司 Dispositif à semi-conducteur de puissance, chargeur monté sur véhicule et véhicule

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