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WO2018135207A1 - Élément laser à semi-conducteurs au nitrure et son procédé de fabrication - Google Patents

Élément laser à semi-conducteurs au nitrure et son procédé de fabrication Download PDF

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Publication number
WO2018135207A1
WO2018135207A1 PCT/JP2017/045314 JP2017045314W WO2018135207A1 WO 2018135207 A1 WO2018135207 A1 WO 2018135207A1 JP 2017045314 W JP2017045314 W JP 2017045314W WO 2018135207 A1 WO2018135207 A1 WO 2018135207A1
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WIPO (PCT)
Prior art keywords
nitride semiconductor
point
end side
guide groove
semiconductor laser
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PCT/JP2017/045314
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English (en)
Japanese (ja)
Inventor
剛 小倉
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ウシオオプトセミコンダクター株式会社
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Publication of WO2018135207A1 publication Critical patent/WO2018135207A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
    • B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser

Definitions

  • the present invention relates to a nitride semiconductor laser device and a method for manufacturing the same.
  • a blue nitride semiconductor laser element having a structure in which a group III nitride semiconductor layer is grown on a GaN substrate.
  • the nitride semiconductor laser element includes an n-type cladding layer (lower cladding layer), an n-type guide layer (lower guide layer), an active layer having a multiple quantum well structure, and a p-type guide layer (upper guide layer) from the GaN substrate side. ) And a p-type cladding layer (upper cladding layer).
  • the emission wavelength is adjusted by the composition of the quantum well layer.
  • a substrate made of a group III nitride semiconductor, such as a GaN substrate, is less cleaved than a GaAs substrate or the like conventionally applied to a light emitting diode or a laser diode. For this reason, in the step of dividing the wafer into individual chips, the dividing position is shifted from the line to be divided, and the chip shape is not stable.
  • Patent Document 1 Japanese Unexamined Patent Application Publication No. 2009-814208 discloses a method of dividing a wafer according to the following procedure to obtain individual laser elements. That is, in the method described in Patent Document 1 (Japanese Patent Laid-Open No. 2009-81428), an n-type semiconductor layer including an AlGaN layer, a light-emitting layer including In, and a p-type semiconductor layer are sequentially stacked on a group III nitride semiconductor substrate. By etching the formed wafer selectively from the p-type semiconductor layer side along the planned division line, an etching groove that exposes the AlGaN layer along the planned division line is formed. Further, a division guide groove is formed along the planned division line in the exposed AlGaN layer. Then, the individual elements are obtained by dividing the wafer along the divided guide grooves.
  • an object of the present invention is to provide a method of manufacturing a nitride semiconductor laser device that can stabilize the chip shape and improve the yield.
  • an embodiment of a method of manufacturing a nitride semiconductor laser device includes a nitride semiconductor substrate including a nitride semiconductor layer including a light emitting layer having a resonator end face.
  • a method of manufacturing a nitride semiconductor laser device comprising: preparing a wafer substrate in which the nitride semiconductor layer is laminated on the nitride semiconductor substrate; and cleaving the nitride semiconductor layer on the wafer substrate.
  • a first divided guide groove including a plurality of point-like portions discretely arranged along a first direction in which a surface serving as the resonator end surface extends, and the plurality of points
  • Each of the other portions has a shape in which the front end side is narrower than the rear end side with respect to the width in the second direction orthogonal to the first direction, and the front end side of the point-like portion is adjacent to the point-like portion. Arranged opposite to the rear end side of the dotted portion That.
  • a plurality of dot-like portions having a shape whose front end side is narrower than the rear end side are formed on the nitride semiconductor layer of the wafer substrate along the first direction which is the cleavage direction.
  • the first divided guide grooves arranged discretely are formed.
  • the plurality of dot-like portions constituting the first divided guide groove are the other dot-like portions in which the end portion (tip portion) having the narrower width of the dot-like portion is adjacent to the dot-like portion in the first direction. Is formed so as to face the wider end (rear end).
  • the cleaving proceeds regularly starting from the end of the narrower dot-like width. Even if the cleavage progress line is bent, as a result of the trajectory correction of the cleavage progress line at the wide end of the other punctiform part facing the cleavage direction, the cleavage trajectory as a whole is relatively It will be straight. Therefore, the chip shape when the wafer substrate is separated can be stabilized.
  • the method may further include a step of cleaving the wafer substrate to form a surface to be the resonator end surface. As described above, by dividing the wafer substrate by cleaving according to the first division guide groove, it is possible to form a flat resonator end face with high reflectivity.
  • the point-like portion has a shape that gradually becomes narrower from the rear end side toward the front end side with respect to the width in the second direction. Also good.
  • the most distal portion of the dotted portion can be reliably set as the starting point of cleavage. Since it is possible to prevent the cleavage progress line from being bent from the middle of the dotted portion, division along the planned cleavage line becomes possible.
  • the point-like portion may have a sharp shape on the tip side.
  • one point of the tip part of the point-like part can be used as the starting point of cleavage. Therefore, if the tip position of the dotted portion is arranged on the planned cleavage line, the wafer substrate can be divided straight according to the planned cleavage line.
  • the point-like portion gradually increases from the rear end side toward the front end side with respect to the depth in the direction orthogonal to the first direction and the second direction. You may have the shape which becomes shallow at least in part. In this case, the forefront part of the point-like part can be set as the starting point of cleavage more reliably.
  • the first divided guide groove in the step of forming the first divided guide groove, may be formed by laser processing.
  • the first divided guide groove may be formed by dry etching in the step of forming the first divided guide groove. In either case, the first divided guide groove can be formed easily and appropriately.
  • the first divided guide groove is formed by laser processing, the depth of the dotted portion can be gradually decreased from the rear end side toward the front end side. In this case, the forefront part of the point-like part can be set as the starting point of cleavage more reliably.
  • the first divided guide groove when the first divided guide groove is formed by dry etching, it is easy to make the point-like portion an arbitrary shape, and the degree of freedom of the shape of the point-like portion is high.
  • the first divided guide groove is formed at a location excluding the upper side of the optical waveguide constituting the resonator.
  • a point-like portion may be formed.
  • the dot-like portion can be formed at a position that does not affect the emission of the laser light.
  • the first division may include a step of forming a plurality of optical waveguides arranged adjacent to each other in the first direction with respect to the nitride semiconductor layer.
  • the first divided guide is set such that a separation distance between the dotted portions adjacent to each other in the first direction is equal to or less than a separation distance between the optical waveguides adjacent to each other in the first direction.
  • a step of forming a second divided guide groove along the second direction on the nitride semiconductor layer, and the wafer substrate according to the second divided guide groove And a step of dividing.
  • a nitride semiconductor layer including a light emitting layer having a cavity end face extending in a first direction formed by cleavage is formed on a nitride semiconductor substrate.
  • Different recesses are formed on one end side and the other end side. The side extending in the first direction of the nitride semiconductor layer corresponds to the upper side of the resonator end face.
  • the nitride semiconductor laser element in which the concave portion having the above shape is formed on the side is a nitride semiconductor laser element having a resonator end face cleaved from the concave portion, and has a stable chip shape.
  • one aspect of the wafer substrate according to the present invention is a wafer substrate in which a nitride semiconductor layer including a light emitting layer is laminated on a nitride semiconductor substrate, and the nitride substrate is formed on the nitride semiconductor layer of the wafer substrate.
  • the first divided guide grooves including a plurality of point-like portions discretely arranged along a first direction in which a surface to be a resonator end surface extends after cleavage is formed, and the plurality of point-like portions are respectively Regarding the width in the second direction orthogonal to the first direction, the tip side has a shape narrower than the rear end side, and the tip side of the point-like portion is adjacent to the point-like portion. Is arranged to face the rear end side.
  • Such a wafer substrate has a relatively straight cleaved orbit when cleaved. That is, the chip shape when the wafer substrate is separated can be stabilized.
  • the present invention it is possible to divide a wafer by cleaving with high accuracy according to a cleaving line. Therefore, the chip shape can be stabilized and the yield can be improved.
  • FIG. 1 is a perspective view showing a configuration example of a nitride semiconductor laser device according to this embodiment.
  • FIG. 2 is a diagram for explaining a manufacturing process of the nitride semiconductor laser device.
  • FIG. 3 is a diagram illustrating a manufacturing process of the nitride semiconductor laser device.
  • FIG. 4 is a diagram for explaining a manufacturing process of the nitride semiconductor laser device.
  • FIG. 5 is a diagram for explaining a manufacturing process of the nitride semiconductor laser device.
  • FIG. 6 is an example of the division guide groove.
  • FIG. 7A is a diagram illustrating the shape of the division guide groove.
  • FIG. 7B is a diagram illustrating the shape of the division guide groove.
  • FIG. 8A is a comparative example of divided guide grooves.
  • FIG. 8B is a comparative example of the division guide groove.
  • FIG. 9 is a diagram showing the formation positions of the division guide grooves on the wafer substrate.
  • FIG. 10 is
  • FIG. 1 is a diagram showing a configuration example of a nitride semiconductor laser element 10 in the present embodiment.
  • a nitride semiconductor laser element (hereinafter referred to as “chip”) 10 emits laser light in the direction of an arrow in the drawing when assembled in a semiconductor laser device and supplied with a predetermined injection current.
  • the chip 10 includes a substrate 11 having a chip width W.
  • the substrate 11 is a nitride semiconductor substrate made of a nitride semiconductor such as gallium nitride (GaN), aluminum nitride (AlN), or aluminum gallium nitride (AlGaN).
  • a semiconductor layer (semiconductor laminated structure) 12 is formed on the substrate 11.
  • the semiconductor layer 12 is a nitride semiconductor layer formed by crystal growth on the main surface with the c-plane of the substrate 11 as the main surface.
  • the semiconductor layer 12 includes at least an active layer having a cavity length L to be a light emitting layer, an n-type semiconductor layer, and a p-type semiconductor layer.
  • the n-type semiconductor layer is disposed on the substrate 11 side with respect to the active layer
  • the p-type semiconductor layer is disposed on the side opposite to the substrate 11 with respect to the active layer. Note that the positional relationship between the n-type semiconductor layer and the p-type semiconductor layer may be reversed.
  • electrons are injected from the n-type semiconductor layer and holes are injected from the p-type semiconductor layer, and these are recombined in the active layer, whereby light is generated from the active layer.
  • a stripe-shaped ridge portion 13 is formed in a layer located on the side farther from the substrate 11 than the active layer.
  • the ridge portion 13 is a current confinement portion for confining current, and is located above the optical waveguide formed in the active layer and extending along the m-axis direction.
  • a pair of resonator end faces facing each other are formed at both ends in the extending direction of the ridge portion 13.
  • the resonator end faces are surfaces in which a reflection film is formed on the surface formed by cleavage, and the laser can be emitted by reflecting light by these resonator end faces.
  • the resonator end surface is formed along the m-plane.
  • the resonator end face is preferably a cleavage plane. The reason is that the surface formed by cleaving is less rough than the surface formed by means other than cleaving, such as a laser cut surface, and the high reflectivity necessary for the resonator end face can be secured. It is.
  • the case where the c-plane of the substrate 11 is the main surface and the m-plane is the resonator end surface is described.
  • the m-plane may be the main surface and the c-plane may be the resonator end surface.
  • a wafer substrate (hereinafter simply referred to as “wafer”) 20 in which a large number of ridge portions 13 to be optical waveguides are arranged in parallel is prepared, and the wafer 20 is divided into sizes that can be cleaved as shown in FIG. Thus, a divided wafer (divided substrate) 21 is formed.
  • a plurality of ridge portions 13 extend in the m-axis direction on the wafer 20, and the plurality of ridge portions 13 are arranged in parallel at a predetermined interval in the a-axis direction. .
  • a split guide groove (first split guide groove) 22 for cleavage is formed on the surface of the split wafer 21 by, for example, laser processing. Further, a cleaving flaw may be formed on the a-axis direction end of the divided wafer 21 with, for example, a diamond cutter.
  • the division guide groove 22 may be formed by dry etching.
  • a plurality of the division guide grooves 22 extend in the a-axis direction, which is the cleavage direction, and the plurality of division guide grooves 22 are arranged parallel to each other at a predetermined interval in the m-axis direction.
  • Each division guide groove 22 is configured by a plurality of dot-like portions that are discretely arranged along the cleavage direction. The shape of the dotted portion of the division guide groove 22 will be described in detail later.
  • the blade is pushed up in accordance with the divided guide groove 22, and the divided wafer 21 is cleaved along the divided guide groove 22.
  • the cleavage proceeds along the m-plane, and a bar-shaped chip 23 as shown in FIG. 4 is formed.
  • a reflection film is formed on each of both end faces in the m-axis direction which are cleavage planes.
  • a resonator end face is formed.
  • a divided guide groove (second divided guide groove) 24 is formed on the bar-shaped chip 23 in the direction perpendicular to the first direction and along the m-axis direction in which the optical waveguide extends.
  • tip 23 is divided
  • tip 10 which has a light emission part separately is formed.
  • the cleavage direction (a-axis direction) corresponds to the first direction
  • the direction in which the divided guide groove 24 extends (m-axis direction) corresponds to the second direction.
  • the dotted portions are arranged in a line on the planned cleavage line 31 set along the cleavage direction, and the width in the direction orthogonal to the planned cleavage line 31 is in the direction of cleavage progress.
  • the front end side has a narrower shape than the rear end side. More specifically, the point-like portion has a shape that gradually becomes narrower in the cleaving direction in plan view.
  • punctate part has the shape where the front end side of the advancing direction of cleavage is sharp.
  • each point-like portion can be a scissors shape (tears) having a round shape on the rear end side in the cleaving direction in a plan view and a sharp shape on the front side in the cleaving direction.
  • the sharp tip of each point-like part can be arranged on the planned cleavage line 31.
  • the angle of the tip of the point-like part may be an arbitrary angle.
  • the split guide groove 22 composed of a plurality of point-like portions having the above-mentioned shape is arranged on the planned cleavage line 31 and the cleavage progress line 32 is compared along the planned cleavage line 31 by performing cleavage according to the planned cleavage line 31.
  • the GaN substrate used for the substrate 11 of the chip 10 in the present embodiment is poor in cleavage as compared with other diode growth substrates such as gallium arsenide (GaAs).
  • GaAs gallium arsenide
  • the wafer cannot be cut straight during cleavage due to the defects.
  • the dividing line is bent at a position where a defect exists, and the wafer may be broken stepwise or obliquely.
  • the split guide groove 22 for cleavage is a pattern in which a plurality of dotted portions are discretely arranged along the cleavage direction, and the shape of the dotted portions is sharp. It was made into the shape provided with the location and the location which is not so. And each point-like part arrange
  • the pointed portion has a sharp one end opposed to the other end formed wider than the other pointed portion adjacent to the pointed portion. Therefore, even if the cleaving progress line is bent due to a defect contained in the GaN substrate, the cleaved trajectory bent from the sharp one end is at the wide end of the other adjacent point-like part. The trajectory is corrected.
  • the cleavage path as a whole becomes relatively straight. That is, the cleavage progress line 32 can be substantially linear along the planned cleavage line 31.
  • FIG. 8A and FIG. 8B are comparative examples of divided guide grooves having point-like portions different in shape from the divided guide grooves 22 in the present embodiment.
  • the divided guide grooves 122 shown in FIG. 8A are examples in which elliptical dotted portions are arranged in a line with the major axis direction aligned with the cleavage direction in plan view.
  • Divided guide grooves 222 shown in FIG. 8B are examples in which rectangular point-like portions in a plan view are arranged in a line with the long side direction aligned with the cleavage direction.
  • the starting point of cleavage is random, and regular cleavage is not performed. That is, as shown by the dotted line 132 in FIG. 8A and the dotted line 232 in FIG. Further, in the worst case, the trajectory correction at the adjacent point-like portions cannot be performed, and the cleavage progress line may deviate greatly from the planned cleavage line. For this reason, when the divided guide groove including the point-like portions having the shapes as shown in FIGS. 8A and 8B is used, the chip shape is not stable and the yield is lowered.
  • FIG. 9 is a diagram showing a positional relationship between the dotted portions of the divided guide grooves 22 and the ridge portions 13 corresponding to the optical waveguides.
  • the plurality of point-like portions of the divided guide groove 22 are formed on the surface of the divided wafer 21 (on the semiconductor layer 12) in the extending direction (a-axis direction) of the m-plane serving as the resonator end face. It is formed discretely along.
  • each point-like portion of the divided guide groove 22 is formed at a place other than the upper part of the optical waveguide constituting the resonator, that is, a place where the ridge portion 13 is not formed.
  • the separation distance between adjacent point-like portions is set to be equal to or less than the separation distance between adjacent optical waveguides (ridge portions 13). Further, in the extending direction (m-axis direction) of the optical waveguide (ridge portion 13), the distance between adjacent point-like portions (center-to-center distance) is set equal to the cavity length L of the chip 10. For example, as shown in FIG. 9, each point-like portion can be formed at the apex position of the chip 10 in plan view.
  • the divided wafer 21 is divided by cleaving according to the divided guide groove 22 to form the bar-shaped chip 23.
  • the bar-shaped chip 23 is divided in a direction orthogonal to the cleavage direction by laser dicing or the like to form the chip 10.
  • the bar-shaped chip 23 is divided at the center position of the dotted portion of the divided guide groove 22 to form the chip 10.
  • a scribe mark 22 a that is a part of a dotted portion remains at the apex portion of the semiconductor layer 12.
  • the scribe mark 22a is a recess having a width in the m-axis direction (second direction) orthogonal to the a-axis direction (first direction) that is the cleavage direction, on one end side and the other end side in the cleavage direction. Note that, depending on the formation position and the separation distance of the dotted portions of the divided guide grooves 22 in the cleavage direction, the chip 10 that has been singulated is not the apex portion of the semiconductor layer 12 but the side that extends in the cleavage direction (resonance).
  • the scribe mark 22a may remain in a part of the upper side of the vessel end face.
  • the wafer substrate can be divided with high accuracy according to the planned cleavage line. Therefore, the chip shape can be stabilized and the yield can be improved.
  • the chip 10 includes the current confinement portion having the ridge structure.
  • the chip 10 may include a current confinement portion having a non-ridge structure (buried structure).
  • the buried structure is a structure in which an outside of a region serving as a current path of an injection current is cut out by etching, and another semiconductor layer is stacked as a buried layer on both sides of the region. Also in this case, the same effect as the above-described embodiment can be obtained.
  • the shape of the dotted portion of the divided guide groove 22 is a saddle shape (tears shape)
  • the shape of the dotted portion is the tip in the cleaving direction in plan view.
  • the side may be narrower than the rear end side, and may be, for example, a triangle or a sector.
  • the shape of the point-like portion is not limited to a shape that gradually becomes narrower in the cleaving direction in plan view, and may have, for example, a step shape.
  • the shape of the point-like portion is not limited to a shape having a sharp tip in the cleaving direction in plan view, and may be, for example, a trapezoid.
  • SYMBOLS 10 Nitride semiconductor laser element (chip), 11 ... Nitride semiconductor substrate, 12 ... Semiconductor layer, 13 ... Ridge part, 20 ... Wafer substrate, 21 ... Divided wafer, 22 ... Divided guide groove, 23 ... Bar-shaped chip

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Semiconductor Lasers (AREA)
  • Dicing (AREA)
  • Laser Beam Processing (AREA)

Abstract

L'invention concerne un procédé de fabrication d'un élément laser à semi-conducteurs au nitrure, le procédé permettant la stabilisation de la forme d'une puce, ce qui permet d'obtenir une augmentation de rendement. Le procédé de fabrication d'un élément laser à semi-conducteurs au nitrure (10) dans lequel des couches semi-conductrices au nitrure (12) comprenant une couche électroluminescente comportant une face d'extrémité de résonateur sont empilées sur un substrat semi-conducteur au nitrure (11) comprend : une étape consistant à préparer une tranche (20) dans laquelle les couches semi-conductrices au nitrure (12) sont empilées sur le substrat semi-conducteur au nitrure (11) ; et une étape consistant à former, sur la couche semi-conductrice au nitrure (12), une première rainure de guidage divisée (22) comprenant une pluralité de parties de type point agencées de façon discrète dans une première direction dans laquelle s'étend une face qui doit devenir une face d'extrémité de résonateur par clivage. Chaque partie de la pluralité de parties de type point a une forme qui, par rapport à la largeur dans une seconde direction orthogonale à la première direction, est plus étroite du côté extrémité avant que du côté extrémité arrière, le côté extrémité avant d'une partie de type point étant positionné à l'opposé du côté extrémité arrière d'une autre partie de type point adjacente à la partie de type point.
PCT/JP2017/045314 2017-01-17 2017-12-18 Élément laser à semi-conducteurs au nitrure et son procédé de fabrication WO2018135207A1 (fr)

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JP2017005944A JP2018117015A (ja) 2017-01-17 2017-01-17 窒化物半導体レーザ素子およびその製造方法

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Cited By (1)

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WO2023145763A1 (fr) * 2022-01-27 2023-08-03 京セラ株式会社 Procédé et appareil de fabrication d'élément laser, élément laser et dispositif électronique

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US20220059994A1 (en) * 2018-12-13 2022-02-24 Sony Group Corporation Semiconductor apparatus and method for manufacturing semiconductor apparatus
JP7206962B2 (ja) * 2019-01-31 2023-01-18 三菱電機株式会社 半導体基板の分離方法と分離用治具
TWI703784B (zh) * 2019-12-31 2020-09-01 華星光通科技股份有限公司 不連續脊狀結構之半導體雷射元件的製造方法

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JP2002064236A (ja) * 2000-08-17 2002-02-28 Nippon Telegr & Teleph Corp <Ntt> 結晶性基板の劈開方法
WO2007074688A1 (fr) * 2005-12-26 2007-07-05 Matsushita Electric Industrial Co., Ltd. Élément semi-conducteur avec un composé au nitrure et son procédé de fabrication
US20080258269A1 (en) * 2007-04-09 2008-10-23 Lg Electronics Inc. Semiconductor wafer and method for cutting the same
JP2011211244A (ja) * 2011-07-27 2011-10-20 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002064236A (ja) * 2000-08-17 2002-02-28 Nippon Telegr & Teleph Corp <Ntt> 結晶性基板の劈開方法
WO2007074688A1 (fr) * 2005-12-26 2007-07-05 Matsushita Electric Industrial Co., Ltd. Élément semi-conducteur avec un composé au nitrure et son procédé de fabrication
US20080258269A1 (en) * 2007-04-09 2008-10-23 Lg Electronics Inc. Semiconductor wafer and method for cutting the same
JP2011211244A (ja) * 2011-07-27 2011-10-20 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023145763A1 (fr) * 2022-01-27 2023-08-03 京セラ株式会社 Procédé et appareil de fabrication d'élément laser, élément laser et dispositif électronique

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