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WO2018139209A1 - Matériau de liaison et corps lié - Google Patents

Matériau de liaison et corps lié Download PDF

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Publication number
WO2018139209A1
WO2018139209A1 PCT/JP2018/000565 JP2018000565W WO2018139209A1 WO 2018139209 A1 WO2018139209 A1 WO 2018139209A1 JP 2018000565 W JP2018000565 W JP 2018000565W WO 2018139209 A1 WO2018139209 A1 WO 2018139209A1
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WIPO (PCT)
Prior art keywords
bonding
oxide
joined body
glass
additive
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PCT/JP2018/000565
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English (en)
Japanese (ja)
Inventor
大剛 小野寺
内藤　孝
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株式会社日立製作所
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Publication of WO2018139209A1 publication Critical patent/WO2018139209A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/24—Fusion seal compositions being frit compositions having non-frit additions, i.e. for use as seals between dissimilar materials, e.g. glass and metal; Glass solders
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers

Definitions

  • the present invention relates to a bonding material containing a glass composition and a bonded body using the bonding material.
  • ⁇ Microdevices used in electronic equipment such as electrical and electronic equipment, LED lighting, and semiconductor modules have joints where ceramic, semiconductor, glass, and metal base materials are joined to another base material.
  • these joining portions are usually joined by epoxy resin, acrylic resin, or the like.
  • the base materials are usually joined by a solder material or a brazing material.
  • a brazing material containing an active metal such as Ti (titanium) or Al (aluminum) can be joined to ceramics without being metallized, but treatment at a high temperature of 800 ° C. is necessary. From the viewpoint of simplification of the process and cost reduction, there is a strong demand for a bonding material that can bond base materials to each other at a low temperature equivalent to that of a solder material without metallization.
  • Patent Document 1 discloses a lead-free glass composition containing Bi 2 O 3 and SiO 2 as main components and having a softening point of 570 ° C. or lower, TiO 2 , Al 2 O 3 , and ZrO 2 for maintaining chemical stability. , A bonding material containing a filler material such as SiO 2 is disclosed.
  • Patent Document 2 discloses a sealing material containing a glass composition containing SiO 2 as a main component and a filler for suppressing interfacial peeling due to thermal expansion.
  • fillers alumina, cordierite, silica, zircon, aluminum titanate, holsterite, mullite, ⁇ -eucryptite, ⁇ -spodumene and the like are disclosed.
  • Patent Document 3 discloses a bonding material that can bond base materials such as ceramics, semiconductors, and glass at a processing temperature of a solder material without metallization.
  • a bonding material a bonding material containing a glass composition mainly composed of V (vanadium) and Te (tellurium) and Ag (silver) particles is used.
  • the bonding material or sealing material disclosed in Patent Documents 1 and 2 does not mention bonding of base materials made of a metal or a semiconductor forming a natural oxide film.
  • Patent Document 3 discloses that the bonding material can bond base materials such as ceramics and semiconductors without metallization.
  • base materials such as ceramics and semiconductors
  • application to a base material made of a metal, semimetal or semiconductor that forms a natural oxide film on the surface has not been sufficiently studied. Therefore, a bonding material that can further improve the bonding strength when bonding a base material made of metal, metalloid, or semiconductor that forms a natural oxide film on the surface is expected.
  • An object of the present invention is to provide a technique capable of joining a base material made of a metal, a semimetal or a semiconductor forming a natural oxide film at a low temperature of a solder material without a metallization process and obtaining a high joint strength. is there.
  • a bonding material according to the present invention includes an oxide glass containing V and Te and an additive, and the additive is Si powder or silicon nitride powder. It is characterized by that.
  • a base material made of a metal, a semimetal or a semiconductor that forms a natural oxide film and another base material can be joined at a low temperature such as a solder material without metallization, and a high joining strength can be obtained. Can be provided.
  • FIG. 1 It is sectional drawing which shows typically the structure of the conjugate
  • FIG. It is an X-ray-diffraction result of the peeling surface at the side of the Si substrate of the joined body according to Example 1. It is an X-ray-diffraction result of the peeling surface at the side of the joining material of the joined body which concerns on Example 1.
  • FIG. It is a figure which shows the relationship between the addition amount of the additive in the joining material which concerns on an Example, and a comparative example, and joining strength.
  • the bonding material according to the present invention includes an oxide glass containing V and Te, and an additive.
  • the oxide glass is preferably lead-free (containing no lead, lead-free) in consideration of the environment.
  • lead-free means that prohibited substances in the RoHS Directive (Restriction of Hazardous Substance: effective July 1, 2006) are contained within a specified value range or less.
  • the oxide glass is a low-melting glass and preferably softens and flows at 600 ° C. or lower.
  • the oxide glass preferably contains Ag in addition to V and Te.
  • Ag the characteristic temperature of the glass is lowered.
  • the glass transition temperature is about 160 to 270 ° C.
  • the softening and flowing temperature is 210 to 350 ° C.
  • the temperature at which the glass crystallizes and the crystal melts is about 350 to 420 ° C.
  • the bonding layer can be made to conduct heat conduction and electric conduction.
  • oxide glass contains V, Te, and Ag in total 80 mol% or more in conversion of an oxide. That is, it is preferable to satisfy V 2 O 5 + TeO 2 + Ag 2 O ⁇ 80 mol%. By satisfying this relationship, it is possible to achieve both a low glass transition temperature, a softening flow temperature, and a stable glass structure.
  • the content of V 2 O 5 in the oxide glass is 10 mol% or more and 30 mol% or less, the content of TeO 2 is 30 mol% or more and 50 mol% or less, and the content of Ag 2 O is 20 mol% or more and 40 mol%. % Or less is preferable.
  • the oxide glass may further contain at least one element of Ba, P, W, La, and alkali metal.
  • the oxide glass has a high melting point of the material after crystallization or the material after change, the heat resistance of bonding is improved.
  • the material after crystallization or the material after change may be brittle and may reduce the bonding strength. In such a case, by containing these components, the glass structure is further stabilized, and a decrease in bonding strength can be suppressed.
  • the oxide glass preferably has a glass transition temperature of 200 ° C. or lower.
  • bonding can be performed at a temperature similar to that of the solder material.
  • the additive is Si powder or silicon nitride powder. These may be used alone or in combination.
  • the Si powder or silicon nitride powder reacts with the natural oxide film formed on the metal, metalloid and semiconductor forming the natural oxide film and its lower layer at the time of bonding, and promotes reconfiguration of the bonding interface at the time of cooling. As a result, high bonding strength can be obtained.
  • Si powder or silicon nitride powder when Si powder or silicon nitride powder is used as an additive, higher bonding strength can be obtained than when metal particles such as Ag particles are used as an additive. This is because metal particles such as Ag particles have a large coefficient of thermal expansion, cannot relax the thermal expansion of glass during heat treatment and cooling, and are difficult to relieve stress.
  • the thermal expansion coefficient of the base material and the bonding material is large, thermal stress is generated at the interface between the base material and the bonding material, and high bonding strength may not be obtained. Since the Si powder or the silicon nitride powder has a lower thermal expansion coefficient than the oxide glass containing V and Te, the difference in the thermal expansion coefficient between the bonding material and the base material can be reduced. Since the effect of reducing thermal expansion depends on the particle diameter of the additive to be added, the particle diameter of the additive is preferably 100 nm or more and 100 ⁇ m or less. By making the particle diameter of the additive 100 nm or more, the effect of relaxation of thermal expansion by the additive can be improved. Moreover, the reaction surface area of an additive can be earned by making the particle diameter of an additive into 100 micrometers or less, and the reactivity with a base material can be maintained.
  • the content of the oxide glass with respect to the total volume of the oxide glass and the additive is preferably more than 20% by volume and less than 80% by volume, more preferably 30% by volume or more and 70% by volume or less, and 40% by volume or more. More preferably, it is 60 volume% or less.
  • An additive other than Si powder or silicon nitride powder may be further added to the bonding material.
  • the amount of gas containing oxygen and nitrogen generated during bonding varies depending on the type of additive. By using different additives depending on the types of base materials to be joined, higher joint strength can be obtained.
  • Examples of the method of bonding the base material using the bonding material include the following two methods.
  • the base materials are joined to each other by applying a paste prepared by adding a solvent to a joining material containing a glass composition containing V and Te and an additive, and heating the paste.
  • a solvent used for pasting include water, N-methylpyrrolidone, N, N-dimethylformamide, N, N-dimethylacetamide, methanol, ethanol, propanol, ethylene glycol, glycerin, dimethyl sulfoxide, tetrahydrofuran, and terpineol.
  • butylhydroxyanisole Since the paste needs a certain viscosity, terpineol and butylhydroxyanisole are particularly preferable. These solvents may be used alone or in combination.
  • a polymer additive such as polyvinylidene fluoride (PVdF) is further added to a bonding material including a glass composition containing V and Te and an additive, thereby forming a sheet.
  • the joining material formed into a sheet is sandwiched between base materials and joined by heating.
  • polymeric additives such as PVdF include acrylic resins, urethane resins, phenolic resins, imide resins, glyoxal resins, butadiene resins, methacrylic resins, fluorine resins, styrene resins, Examples thereof include ethylene resins. These resins may be used alone or in combination. When such a polymer is mixed, the influence of stress due to the difference in thermal expansion coefficient of the base material can be alleviated, and a decrease in bonding strength can be suppressed.
  • the polymer When a polymer additive is added to the glass composition and the additive, and then formed into a highly flexible sheet, the polymer is added to the total volume% of the glass composition and the additive.
  • the addition amount of the agent is preferably 5% by volume or more and 70% by volume or less.
  • the atmosphere at the time of bonding includes air, oxygen gas, nitrogen gas, argon gas, etc., inert atmosphere, hydrogen gas reducing atmosphere, etc. In any case, high bonding strength can be obtained. It is preferable that the atmosphere at the time of joining is properly used depending on the type and use of the substrates to be joined.
  • the heating method at the time of joining is generally heating in a thermostatic chamber.
  • heating can be performed by converting light energy into heat energy by laser irradiation.
  • the bonding material is heated to a temperature equal to or higher than the crystallization temperature of the oxide glass to crystallize the oxide glass and then melt. It is preferable to join by. This is because by obtaining a higher fluidity than the softening flow of the glass by melting, the contactability and adhesion of the glass and additive to the bonding interface are improved and higher reactivity is obtained. However, it is not necessary to crystallize the glass if it has high softening fluidity without crystallizing and melting the glass.
  • the heating temperature at the time of joining is preferably about the temperature at which the crystallized oxide glass melts.
  • the heating temperature is preferably 320 to 420 ° C.
  • the load during bonding is preferably 0.05 kg / cm 2 or more and 1.0 kg / cm 2 or less.
  • the joined body 1 includes a first base material 101 made of a metal, a semimetal, or a semiconductor that forms a natural oxide film, a joining layer 102, and a second base material 103.
  • the first substrate may be a metal, a semimetal, or a semiconductor that forms a natural oxide film, and the first substrate includes an oxide film layer.
  • the metal, metalloid and semiconductor forming the natural oxide film are Ti (titanium), Mn (manganese), Fe (iron), Co (cobalt), Ni (nickel), Cu (copper), Zn (zinc), Zr (zirconium) Nb (niobium), Mo (molybdenum), W (tungsten), Ag (silver), Si (silicon), Al (aluminum), Bi (bismuth), Ge (germanium), Sn (Tin), In (indium) Pt (platinum), Au (gold), or an alloy containing these.
  • the bonding layer 102 includes an oxide containing (vanadium) and Te (tellurium) and an additive, and the additive contains Si or silicon nitride.
  • the oxide 105 containing V and Te and the additive (Si or silicon nitride) 104 are preferably dispersed as shown in FIG.
  • FIG. 2 shows a form in which the additive is dispersed in the oxide, the oxide may be dispersed in the additive. Since the oxide and the additive are dispersed, a decrease in bonding strength can be suppressed.
  • the ratio of the oxide containing V and Te to the total volume of the oxide containing V and Te and the additive is preferably more than 20% by volume and less than 80% by volume, and is 30% by volume or more and 70% by volume or less. It is more preferable that it is 40 volume% or more and 60 volume% or less.
  • the bonding layer 102 preferably has voids.
  • the thermal expansion coefficients of the first base material 101 or the second base material 103 and the bonding layer are greatly different, there is a risk of peeling due to a thermal cycle or the like.
  • By dispersing the voids in the bonding layer 102 it is possible to relax the thermal stress and increase the resistance to thermal cycling.
  • the proportion of voids in the bonding layer is preferably 10% by volume or less. By setting the ratio of the voids to 10% by volume or less, it is possible to suppress a decrease in bonding strength due to a decrease in the contact area between the base material and the bonding material.
  • the size of the gap is preferably approximately 10 nm to 10 ⁇ m. By setting the size of the gap to 10 nm or more, the effect of stress relaxation due to the gap can be sufficiently obtained. By setting the size of the gap to 10 ⁇ m or less, high bonding strength can be obtained without impeding contact between the bonding material and the substrate.
  • the oxide containing V and Te may have an amorphous phase. Note that although oxide glass is used as the bonding material, the oxide containing V and Te contained in the bonding layer of the bonded body does not need to maintain a glass state.
  • the oxide containing V and Te may be in a glass state or may be crystallized. Moreover, it may react with the additive in a base material or a joining layer, and may change into another substance.
  • the oxide phase preferably contains Ag in addition to V and Te, and more preferably contains V, Te and Ag in total 80 mol% or more in terms of oxide.
  • the oxide phase preferably contains at least one of Ba (barium), W (tungsten), La (lanthanum), P (phosphorus), and an alkali metal. By including these in the oxide phase, it is possible to suppress a decrease in bonding strength.
  • the material of the second base material 103 is not particularly limited, such as metal, glass, and ceramics.
  • the metal include, for example, base materials containing Cu (copper), Ni (nickel), Co (cobalt), Fe (iron), Al (aluminum), and the like, or alloys thereof.
  • the glass include boric acid glass, silicic acid glass, phosphoric acid glass, and vanadium glass.
  • ceramics include aluminum oxide, aluminum nitride, silicon nitride, and silicon carbide. In general, since metal, glass, ceramics, and semiconductor have different coefficients of thermal expansion, the joint surface is vulnerable to thermal cycling.
  • gas is generated at the time of bonding by Si, silicon nitride, or the like contained in the bonding material, and voids are formed in the bonding layer by the generated gas. Since the large thermal stress due to the difference in thermal expansion coefficient is relieved by the voids, a bonded body resistant to thermal cycling can be obtained.
  • the second base material 103 includes an oxide film layer.
  • a modified surface layer is also included in the base material.
  • the structure of the bonded body can be confirmed visually, and the composition and structure of the bonding layer and the bonding interface between the base material and the bonding layer are Auger electron spectroscopy, X-ray photoelectron spectroscopy, fluorescent X-ray analysis, X-ray diffraction analysis, and electron This can be confirmed by microscopic observation.
  • the glass composition used for the bonding material was prepared as follows.
  • the starting material was weighed to a predetermined molar ratio. Specifically, 20.5 mol% of V 2 O 5 , 39.5 mol% of TeO 2 , 32.5 mol% of Ag 2 O, 5.0 mol% of WO 3 , 2 of La 2 O 3 .5 mol%.
  • oxide powder purity: 99.9% or more
  • the starting materials were mixed and placed in a crucible. The mixture was mixed until the color was visually uniform, and the crucible containing the mixed powder was placed in a glass melting furnace, heated and melted. About 10 ° C./min.
  • the glass was melted at a set temperature of 750 ° C. and held for 1 hour while stirring. Thereafter, the crucible was removed from the glass melting furnace, and the glass was poured into a plate that had been heated to 150 ° C. in advance, and cooled. The glass cooled to room temperature was coarsely pulverized to produce a glass composition powder. This was designated as Glass Composition A.
  • ⁇ Bonding material> The glass composition A and Si powder were weighed so that the volume ratio was 50% by volume, and mixed in an agate mortar until the color became uniform visually to obtain a mixed powder of the bonding material. Thereafter, 0.2 g of the mixed powder of the bonding material was put into a 10 mm ⁇ die, a load of 1 ton was applied, and the mixture was held for 1 minute to produce a bonding material pellet. The thermal characteristics of this bonding material were evaluated with a differential thermal analyzer.
  • the differential thermal analyzer is a method of measuring the temperature difference between the sample and the reference material as a function of temperature while changing the temperature of the sample and the reference material according to a certain program.
  • FIG. 3 shows the thermal property evaluation results of the bonding material.
  • the endothermic behavior of the glass transition point due to the glass composition was observed near 189 ° C. Although the softening point was not clearly clarified, an exothermic behavior due to crystallization of the glass composition was observed from 330 ° C., and a sharp endothermic behavior due to the melting point of the glass composition crystallized around 377 ° C. was confirmed. It was done.
  • a 10 mm square Si substrate and an aluminum oxide substrate were used as the base material.
  • a bonding material pellet was placed on an aluminum oxide substrate, and a Si substrate was placed on top so as to sandwich the pellet to obtain a precursor of a joined body.
  • a weight made of SUS was placed on the precursor of the joined body so that the load would be 0.25 kg / cm 2, and it was put into an electric furnace. Then, it heated up to 400 degreeC with the temperature increase rate of 10 degree-C / min, hold
  • the bonding strength of this bonded body was measured by applying a shear load parallel to the bonding surface to the Si chip. Moreover, the crystal structure of the peeled Si substrate surface and the peeled surface of the bonding material was evaluated by X-ray diffraction measurement.
  • FIG. 4 shows the X-ray diffraction results of the peeled Si substrate surface
  • FIG. 4 shows the X-ray diffraction results of the peeled Si substrate surface
  • FIG. 5 shows the X-ray diffraction results of the peeled surface of the bonding material. From FIG. 4, a peak derived from the Si powder in the bonding material, a peak derived from the (100) orientation plane of the Si substrate, and a peak derived from Ag precipitated from the glass composition were confirmed. Moreover, from FIG. 5, the peak derived from the aluminum oxide substrate, the peak derived from Ag deposited from the glass composition, and the peak of the Si powder as the additive were confirmed. From these results, it was found that no distinct heterogeneous phase was formed at the peel interface after bonding.
  • a bonding material was produced in the same procedure as in Example 1 except that the content of Si powder in the bonding material was changed to 20% by volume, and a bonded body was manufactured using the bonding material.
  • a bonding material was produced in the same procedure as in Example 1 except that the content of Si powder in the bonding material was changed to 30% by volume, and a bonded body was manufactured using the bonding material.
  • a bonding material was produced in the same procedure as in Example 1 except that the content of Si powder in the bonding material was changed to 40% by volume, and a bonded body was manufactured using the bonding material.
  • a bonding material was produced in the same procedure as in Example 1 except that the content of Si powder in the bonding material was changed to 60% by volume, and a bonded body was manufactured using the bonding material.
  • a bonding material was produced in the same procedure as in Example 1 except that the content of Si powder in the bonding material was changed to 70% by volume, and a bonded body was manufactured using the bonding material.
  • a bonding material was produced in the same procedure as in Example 1 except that the content of Si powder in the bonding material was changed to 80% by volume, and a bonded body was manufactured using the bonding material.
  • a bonding material was prepared in the same procedure as in Example 1 except that the Si powder in the bonding material was changed to Si 3 N 4 powder, and a bonded body was manufactured using the bonding material.
  • the particle diameter of the used Si 3 N 4 powder was 50 ⁇ m or less.
  • a bonding material was prepared in the same procedure as in Example 8 except that the content of Si 3 N 4 powder in the bonding material was changed to 20% by volume, and a bonded body was manufactured using the bonding material.
  • a joining material was produced in the same procedure as in Example 8 except that the content of Si 3 N 4 powder in the joining material was changed to 30% by volume, and a joined body was produced using the joining material.
  • a joining material was produced in the same procedure as in Example 8 except that the content of Si 3 N 4 powder in the joining material was changed to 40% by volume, and a joined body was produced using the joining material.
  • a joining material was produced in the same procedure as in Example 8 except that the content of Si 3 N 4 powder in the joining material was changed to 60% by volume, and a joined body was produced using the joining material.
  • a joining material was produced in the same procedure as in Example 8 except that the content of Si 3 N 4 powder in the joining material was changed to 70% by volume, and a joined body was produced using the joining material.
  • a joining material was produced in the same procedure as in Example 8 except that the content of Si 3 N 4 powder in the joining material was changed to 80% by volume, and a joined body was produced using the joining material.
  • a bonding material was prepared in the same procedure as in Example 1 except that the glass composition A in the bonding material was changed to the glass composition B, and a bonded body was manufactured using the bonding material.
  • the composition of the glass composition B is as follows: V 2 O 5 20.0 mol%, TeO 2 37.5 mol%, Ag 2 O 35.0 mol%, BaO 5.0 mol%, WO 3 2 0.0 mol% and La 2 O 3 were 0.5 mol%.
  • a bonding material was produced in the same procedure as in Example 8 except that the glass composition in the bonding material was changed to the glass composition B, and a bonded body was manufactured using the bonding material.
  • Example 1 A joining material was produced in the same procedure as in Example 1 except that no Si powder was added to the joining material, and a joined body was produced using the joining material.
  • Example 2 A joining material was produced in the same procedure as in Example 1 except that only Sn particles were used without adding a glass composition and Si powder as a joining material, and a joined body was produced using the joining material.
  • Example 3 A bonding material was prepared in the same procedure as in Example 1 except that only the Sn 3.5 mass% Ag particles were used without adding the glass composition and Si powder as the bonding material, and the bonded body was formed using the bonding material. Manufactured.
  • Example 4 A joining material was produced in the same procedure as in Example 1 except that only Ag particles were used without adding a glass composition and Si powder as a joining material, and a joined body was produced using the joining material.
  • Example 5 A joining material was produced in the same procedure as in Example 1 except that the Si powder in the joining material was changed to SiO 2 powder, and a joined body was produced using the joining material.
  • Example 6 A bonding material was prepared in the same procedure as in Example 1 except that the Si powder in the bonding material was changed to Ag powder, and a bonded body was manufactured using the bonding material.
  • Fig. 6 shows the relationship between the amount of additive added in the bonding material and the bonding strength. Regardless of whether Si powder or silicon nitride powder is used as the additive, the additive is 20% by volume (Examples 2 and 9) and 80% by volume (Examples 7 and 14) with respect to the glass composition. When added, the bonding strength was low. On the other hand, in Examples 1, 3 to 6, 8, 10 to 13, 15, and 16 in which the additive is added in an amount of 30 to 70% by volume with respect to the glass composition, the conventional bonding material shown in the comparative example In comparison, it was revealed that the bonding strength was extremely high.

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Abstract

Le but de la présente invention concerne une technique qui permet de lier un substrat, ledit substrat comprenant un métal, un semi-métal ou un conducteur pouvant former un film d'oxyde natif, à une température aussi basse que la température d'un matériau de soudage sans effectuer de traitement de métallisation et, par conséquent, d'obtenir une force de liaison élevée. A cet effet, le matériau de liaison selon la présente invention, qui comprend un verre d'oxyde contenant V et Te et un matériau additif, est caractérisé en ce que le matériau additif est une poudre de Si ou une poudre de nitrure de silicium.
PCT/JP2018/000565 2017-01-30 2018-01-12 Matériau de liaison et corps lié WO2018139209A1 (fr)

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JP2017-013781 2017-01-30
JP2017013781A JP2020073418A (ja) 2017-01-30 2017-01-30 接合材及び接合体

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020263504A1 (fr) * 2019-06-24 2020-12-30 Diebold Nixdorf International Ensemble extracteur
US20230037628A1 (en) * 2021-08-03 2023-02-09 Lawrence Livermore National Security, Llc Compliant suture-based joinery
CN117458059A (zh) * 2023-12-06 2024-01-26 湖南省新化县长江电子有限责任公司 一种用于新能源动力电池真空封接的材料及制备方法

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