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WO2019170338A1 - Filtre rf, composant de filtre rf et procédé de fabrication d'un filtre rf - Google Patents

Filtre rf, composant de filtre rf et procédé de fabrication d'un filtre rf Download PDF

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Publication number
WO2019170338A1
WO2019170338A1 PCT/EP2019/052738 EP2019052738W WO2019170338A1 WO 2019170338 A1 WO2019170338 A1 WO 2019170338A1 EP 2019052738 W EP2019052738 W EP 2019052738W WO 2019170338 A1 WO2019170338 A1 WO 2019170338A1
Authority
WO
WIPO (PCT)
Prior art keywords
filter
transmission line
filter stage
port
electroacoustic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2019/052738
Other languages
English (en)
Inventor
Oleksandr GAVRYLIUK
Stefan Freisleben
Alexander Chernyakov
Georgiy Sevskiy
Petro KOMAKHA
Patric Heide
Wai San WONG
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RF360 Europe GmbH
Original Assignee
RF360 Europe GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RF360 Europe GmbH filed Critical RF360 Europe GmbH
Publication of WO2019170338A1 publication Critical patent/WO2019170338A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/542—Filters comprising resonators of piezoelectric or electrostrictive material including passive elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/58—Multiple crystal filters
    • H03H9/60—Electric coupling means therefor
    • H03H9/605—Electric coupling means therefor consisting of a ladder configuration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H03H9/6423—Means for obtaining a particular transfer characteristic
    • H03H9/6433—Coupled resonator filters
    • H03H9/6483—Ladder SAW filters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
    • H03H9/703—Networks using bulk acoustic wave devices
    • H03H9/706—Duplexers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
    • H03H9/72—Networks using surface acoustic waves
    • H03H9/725—Duplexers

Definitions

  • the present invention refers to RF filters, e.g. filters that can be utilized in mobile communication systems such as handheld devices and the like, and to RF filter components realizing such RF filters. Further, the present invention re fers to methods of manufacturing such RF filters.
  • transmission lines in a transmission line fil ter topology can be used to select between wanted RF signals and unwanted RF signals.
  • a TL filter topology two or more electromagnetically coupled transmission lines are provided and electrically connected with additional circuit elements such as capacitance elements or inductance elements.
  • additional circuit elements such as capacitance elements or inductance elements.
  • shorter transmis sion lines can be used by electrically connecting shortening capacitors to a respective transmission line.
  • Such shortening capacitors used in transmission line filter designs can im prove electrical characteristics and/or allow a miniaturiza tion of the corresponding filter component.
  • LTCC low temperature cofired ceramics
  • IPD integrated passive device
  • the RF filter comprises a first port and a second port.
  • the filter comprises a transmission line filter stage electrically connected between the first port and the second port.
  • the transmission line filter stage comprises transmis sion line structures and a capacitance element.
  • a first cir cuit element of the transmission line filter stage is ar ranged on a carrier substrate suitable for electroacoustic filter elements.
  • the proposed RF filter has at least one filter stage.
  • a filter stage circuit elements establishing a filter functionality are grouped.
  • the number of filter stages is not limited to one.
  • the RF filter can comprise two or more filter stages.
  • the filter stages can be electrically connected in series, e.g. in the form of a cascade.
  • the transmission line filter stage is a filter stage of the RF filter that bases on transmission lines.
  • the trans mission line filter stage comprises, for example, two or more transmission lines as transmission line structures and a ca pacitance element.
  • the two or more transmission lines can be electromagnetically coupled to one another.
  • each transmission line is electromagnetically coupled to exactly one additional transmission line.
  • the transmission lines can be realized as metallization structures on a dielectric material.
  • the transmission lines can be electrically connected to capacitance elements such as shortening capacitance elements to reduce the electrical length of the transmission line to allow smaller spatial di mensions .
  • Electroa coustic filter elements are filter elements for RF filters that employ acoustic waves to realize filter functionality. When RF signals are converted to acoustic waves then - due to the shorter wavelength of acoustic waves compared to the wavelengths of corresponding RF signals - electroacoustic components having smaller spatial dimensions and can replace filter elements based on LC elements or transmission lines.
  • materials that are suitable for electroacoustic filter elements are usually more expensive and have other drawbacks.
  • the carrier substrate comprises a mate rial selected from a piezoelectric material, a glass, a sili con-containing material, a silicon nitride, Si 3 N 4 .
  • the piezoelectric material can be a piezoelec tric thin-film or a piezoelectric single crystal material.
  • Lithium tantalite, lithium niobate or quartz can be used as a single crystal material for the carrier substrate.
  • lithium tantalate and lithium niobate can also be provided as a thin-film, i.e. provided utilizing thin-film deposition techniques such as sputtering, physical vapor deposition, chemical vapor deposition, molecular beam epitaxy and the like.
  • the carrier substrate can comprise the piezoelectric material on a car rier material of said carrier substrate.
  • the material of the carrier substrate can be chosen according to its deformation parameters during manufacturing steps. However, it is possible that the material of the carrier sub strate can also be chosen according to its piezoelectric properties, e.g. if the RF filter comprises a further filter stage that bases on electroacoustic circuit elements. Of course, it is also possible to choose the material of the carrier substrate such that a good trade-off between loss pa rameters during manufacturing and piezoelectric characteris tics is obtained.
  • the RF filter further comprises a second filter stage electrically connected be tween the first port and the second port.
  • the second filter stage can be an electroacoustic filter stage and comprise electroacoustic filter structures.
  • a first filter structure of the electroacoustic filter stage is arranged on the car rier substrate.
  • This second, electroacoustic filter stage can make use of the piezoelectric effect to convert between RF signals and acous tic waves.
  • acoustic waves are employed to provide fil ter functionality.
  • the second filter stage and the first filter stage can be electrically connected in series between the first port and the second port.
  • an RF filter that has two filter stages of fundamentally different working principles.
  • the first filter stage bases on transmission lines and bases on electromag netic working principles only.
  • the second filter stage bases on electromagnetic working principles together with acoustic working principles.
  • SAW surface acoustic wave
  • TF-SAW thin-film-surface acoustic wave
  • GBAW resonator guided bulk acoustic wave
  • BAW bulk acoustic wave
  • SMR solidly mounted resonator
  • FBAR film bulk acoustic
  • the first filter structure can employ acoustic surface waves of bulk acoustic wave resonators. Acoustic surface waves are usually transversal waves or waves with mixed wave modes.
  • Bulk acoustic wave are usually longitudinal waves.
  • interdigitated comb-like electrode structures are arranged on a piezoelectric material and an acoustic wave propagates at the interface of the piezoelectric material in a lateral direction.
  • a BAW resonator a piezo electric material is sandwiched between a bottom electrode and a top electrode and propagates in a vertical direction.
  • the resonating structure of BAW resonators must be acousti cally isolated from its environment.
  • an FBAR- type BAW resonator has a cavity arranged below the bottom electrode.
  • An SMR-type BAW resonator has an acoustic mirror arranged below the bottom electrode. The acoustic mirror com prises layers of high acoustic impedance alternated by layers of low acoustic impedance.
  • the electroacoustic filter stage can employ electroacoustic resonators arranged and electrically configured in a ladder- type like topology or in a lattice-type like topology.
  • series resonators are electrically connected in series in a signal path and parallel electroa coustic resonators are electrically connected in a respective parallel path electrically connecting the signal path to ground .
  • SAW resonators and GBAW resonators have their comb like electrode structures arranged on a single crystal piezo electric bulk material.
  • TF-SAW resonators can have their comb-like electrode structures on a piezoelectric thin-film that was deposited utilizing thin-film deposition techniques as explained above.
  • an RF filter that has a first filter stage based on transmission lines and a second filter stage based on electroacoustic resonators. Both one circuit element of the transmission line-based filter stage and one circuit element of the filter stage employing acoustic waves are arranged on the same carrier substrate.
  • manufacturing steps for electroacoustic res onators to establish circuit elements of the filter stage based on transmission lines.
  • the transmission lines or capacitance elements elec trically connected to transmission lines and belonging to the first filter stage utilizing processing steps used for estab lishing the electroacoustic resonators. This provides the ad vantage of benefiting from the achievable high precision structuring methods employed for the creation of electroa coustic resonators also for the circuit elements of the first filter stage.
  • the capacitance value of a capacitor has a non linear dependence with respect to the distance between the capacitor's electrodes.
  • very small variations of the capacitance distance can result in rela tively large variations of the capacitor's capacitance.
  • the provided RF filter makes use of the possibility to provide a capacitor with a distance of the electrodes obtained with a very high precision.
  • unwanted capacitance variations e.g. during manufacturing, are reduced and the extent of un predictable frequency shifts is strongly reduced.
  • the first circuit element of the trans mission line filter stage has a construction like an electro acoustic structure but is acoustically inactive.
  • Electroacoustic resonators have a construction that provides a static capacitance, i.e. electroacoustic resonators have a first electrode and a second electrode and a dielectric mate rial or a gas between the two electrodes.
  • electroacoustic resonators have a first electrode and a second electrode and a dielectric mate rial or a gas between the two electrodes.
  • comb-like electrode structures of SAW reso nators or sandwich structures of BAW resonators can be uti lized to realize capacitance elements of the first filter stage.
  • the elec trode structures can be arranged with respect to a piezoelec tric axis of a piezoelectric material such that no, or essen tially no, acoustic waves are excited in a working frequency band of the RF filter.
  • the dielectric material which would be a piezoelectric material for an electroacoustic resonator can be replaced by a dielectric material without piezoelectric properties .
  • Methods for trimming characteristic frequencies of electroa coustic resonators can be utilized to determine the capaci tance value of the corresponding capacitance element with a very high degree of precision.
  • the first circuit element of the transmission line filter stage has a trimming element.
  • the trimming element is an element of the circuit element that allows variation of the circuit element's electric prop erties by selectively removing or adding matter to the trim ming element.
  • the trimming element can be the dielectric ma- terial between two electrode structures. By removing or add ing matter to the dielectric material the distance between the electrode structures can be determined to a high degree of precision. Further, it is possible to maintain a predeter mined distance between the electrodes and to selectively re move material between the electrode structures such that the effective dielectric value of the piezoelectric material is determined to have a specific value. Also, it is possible to vary the size of the bottom electrode or of the top elec trode, e.g. in a sandwiched BAW resonator-like structure.
  • the removal or the addition of piezoelectric material e.g. in the form of stripes of a certain thickness on the electrode fingers can be used to trim the capacitance value of the capacitance element to a desired specific value.
  • the RF filter further comprises a third port. Then, it is possible that the transmission line filter stage is electrically connected between the first port and the third port.
  • the second filter stage can be electrically connected between the third port and the second port.
  • Such a filter provides a multiplexer functionality, e.g. a duplexer functionality or a diplexer functionality.
  • the third port can be a common port for booth filter stages.
  • the first port can be used for transmission signals and the second port can be used for reception signals or vice versa. Also, it is possible that the first port and the second port can be used for transmission signals and that the first port and the sec ond port can be used for reception signals only.
  • the RF filter can be selected from a multi plexer, a diplexer and a duplexer.
  • the first filter stage can provide a bandpass function ality and the second filter stage can provide a bandpass fil ter functionality.
  • one of the filter stages provides a bandpass functionality while the re spective other filter stage provides a high pass functional ity or a low pass filter functionality.
  • the RF filter component comprises a base substrate and a carrier substrate.
  • the carrier substrate is arranged on and electrically con nected to the base substrate.
  • the carrier substrate comprises a first circuit element of a transmission line filter stage and a first circuit element of an electroacoustic filter stage.
  • the base substrate provides a capacitance element and/or an inductance element.
  • a second substrate for circuit elements be longing to electroacoustic filter circuit elements and a third, common carrier on which the first substrate and the second substrate are arranged and in which additional circuit components can be integrated.
  • a method of manufacturing an RF filter comprises the steps: - providing a carrier substrate suitable for electroacoustic filter elements,
  • the method is realized such that the first circuit element is established as a capacitance el ement or a transmission line.
  • the step of structuring the first circuit element of the transmission line filter stage comprises:
  • the method of manufacturing an RF filter further comprises one or more steps selected from:
  • thicknesses that determine distances of electrodes of a capacitance element should be provided with a high precision.
  • the environment of an electrode of a capacitance element has a strong impact on the capacitance element's capacitance value.
  • the capacitance element is realized as a sandwich structure with a dielectric material below and/or above a bottom electrode then the thickness of the corresponding dielectric material is funda mental to the circuit element's electric properties.
  • the method of manufacturing an RF compo nent further comprises the step:
  • Fig. 1 illustrates a possible equivalent circuit diagram of the first filter stage
  • Fig. 2 illustrates an RF filter having two filter stages
  • Fig. 3 illustrates an equivalent circuit diagram of a pre ferred embodiment of the first filter structure
  • Fig. 4 illustrates the basic structure of an SAW resonator
  • Fig. 5 illustrates a basic construction of a BAW resonator
  • Fig. 6 illustrates a basic construction of an RF filter com ponent
  • Fig. 7 illustrates possible ways of trimming a capacitance element to its desired capacitance value
  • Fig. 8 illustrates the impact of capacitance variations on the transfer function of an RF filter.
  • Figure 1 shows a possible equivalent circuit diagram of the RF filter having a first filter stage FS1.
  • the first filter stage has circuit elements electrically connected between the first port PI and the second port P2.
  • a signal line SL is electrically connected between the first port PI and the second port P2.
  • the signal line comprises two capaci tance elements CE electrically connected in series between the first port PI and the second port P2.
  • the first filter stage FS1 comprises two transmis sion lines TL.
  • Each transmission line TL is electrically con figured in a parallel path electrically connecting the signal line SL to ground.
  • each transmission line TL is electrically connected to a capacitance element which is con figured between the transmission line and ground.
  • the capacitance elements are electrically connected be tween one end of the transmission lines TL and ground. The capacitance elements between one end of the respective trans mission line TL and ground establish a shortening capacitor to reduce the electrical length of a transmission line TL.
  • Such shortening capacitance elements is crucial to the performance of the first filter stage.
  • it is preferred that such a shortening capaci tance element CE1 is realized as the first circuit element of the first filter stage FS1 on the carrier substrate CS suited for electroacoustic resonating structures.
  • Figure2 illustrates a possible equivalent circuit diagram showing two filter structures FS1, FS2.
  • the first filter structure FS1 bases on electromagnetically coupled transmis sion lines TL.
  • the electromagnetic coupling is illustrated by the arrow between the transmission lines TL.
  • the second fil ter structure FS2 has electroacoustic active elements. At least a first electroacoustic active element EAE1 is also ar ranged on the carrier substrate.
  • the second filter structure FS2 can have a ladder-type like topology with electroacoustic resonators electrically con nected in series in a signal path between the first port PI and the second port P2. Further, one or more electroacoustic resonators can be arranged in one or more parallel paths electrically connecting the signal path to ground.
  • the RF filter shown in Figure 2 has a third port P3.
  • the third port P3 is arranged between the first filter stage FS1 and the second filter stage FS2.
  • the first filter stage FS1 is electrically connected between the first port PI and the third port P3.
  • the second filter stage FS2 is elec trically connected between the third port P3 and the second port P2.
  • the third port P3 can be a common port.
  • the first port and the second port can be used for transmission signals only or for reception signals only.
  • Figure 3 illustrates a possible equivalent circuit diagram of a preferred first filter stage FS1.
  • the first filter stage FS1 four capacitance elements can be electrically connected in series in the signal path between the first port PI and the second port P2.
  • Three transmission lines electrically connect the signal path between the two ports PI, P2 to ground.
  • the three transmission lines are electromagnetically coupled to one another.
  • each transmission line is elec tromagnetically coupled to both other transmission lines.
  • the end of each transmission line that is connected to the signal path is also connected to ground via a shorten ing capacitance element.
  • FIG. 4 illustrates the basic construction of an SAW resona tor SAWR.
  • the SAW resonator comprises comb-like electrode structures in an interdigitated structure IDS comprising electrode fingers EFI that are connected to busbars BB .
  • Each electrode finger EFI is electrically connected to one of the two busbars BB .
  • the electrode fingers EFI are arranged on a piezoelectric material.
  • interdigitated structure IDS is flanked by an acoustic reflector REF comprising struc tured fingers that are not electrically connected to one of the busbars BB .
  • an acoustic reflector REF comprising struc tured fingers that are not electrically connected to one of the busbars BB .
  • Such a construction can be used - if acousti cally active - to establish an electroacoustic resonator.
  • such a structure can be used - if acoustically inac tive - as a pure capacitance element.
  • structuring steps for establishing the SAW resonator structures can also be used to establish capacitance elements of the first filter stage on the common carrier substrate.
  • Method steps for trimming the frequency level of an acousti- cally active structure can be used to trim the capacitance value of the corresponding first circuit element of the transmission line filter stage.
  • Figure 5 illustrates a basic construction of a sandwich layer construction where dielectric material DM is sandwiched between a bottom electrode and a top electrode EL. If the dielectric material between the electrodes is a piezo electric material PM, then a piezoelectric resonator working with bulk acoustic waves is obtained. However, such a layer construction can also be used to establish a pure capacitance element that is acoustically inactive.
  • manufacturing steps for trimming a desired acoustic working frequency of a resonator can also be used to trim the desired capacitance value of an acoustically inactive capaci tance element.
  • Figure 6 illustrates a basic construction of an RF filter component.
  • the filter component has essentially two carriers: circuit elements of the first filter stage, e.g. realized by metallizations M, and circuit elements of the second filter stage, e.g. realized by BAW resonating structures BAWR or ca pacitance elements CE, are arranged together on the common carrier substrate CS .
  • the common carrier substrate CS is ar ranged on a base substrate BS in which further circuit ele ments, e.g. inductance elements and/or capacitance elements can be integrated or attached to.
  • an RF filter component that complies with the trend to wards miniaturization because only two substrates are needed and that can be produced in a cost-efficient manner because manufacturing steps for the third herewith unnecessary car rier can be omitted.
  • FIG. 7 illustrates possible ways to trim a capacitance ele ment to a specific, desired capacitance value.
  • the capaci tance value can be obtained with high precision by trimming the thickness of the dielectric material between the two electrodes EL, by selectively removing dielectric material DM between the electrodes EL to trim the effective dielectric constant of the matter between the electrodes or by trimming the area of the bottom electrode or of the top electrode to a specific value.
  • the specific capacitance value needed for the capacitance el ement CE can be determined by measuring a thickness map of the material of the carrier substrate CS below the bottom electrode EL and/or by measuring a thickness map of the die lectric material DM arranged above the bottom electrode EL before the material of the top electrode EL is deposited.
  • Figure 8 illustrates the transfer characteristic of a spe cific RF filter having a transmission line filter stage
  • curve 1 illustrates the frequency re sponse if the capacitance of a shortening element is slightly varied.
  • curve 2 illustrates the frequency re sponse if the capacitance of a shortening element is slightly varied.
  • RF filters can comprise further filter stages and RF filter com ponents can comprise further connections and structures. Sim ilarly, manufacturing methods can comprise further steps and processes . List of Reference Signs

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

L'invention concerne un filtre RF ayant des caractéristiques de filtre améliorées et en particulier une variation réduite de propriétés de filtre. Le filtre RF comprend un étage de filtre de ligne de transmission (FS1) connecté électriquement entre un premier port (PI) et un second port (P2). L'étage de filtrage de ligne de transmission (FS1) présente une structure de ligne de transmission (TL) et un élément de capacité (CE, CE1). Un premier élément de circuit (CE1) de l'étage de filtre de ligne de transmission est disposé sur un substrat de support (CS) approprié pour des éléments de filtre électroacoustique.
PCT/EP2019/052738 2018-03-06 2019-02-05 Filtre rf, composant de filtre rf et procédé de fabrication d'un filtre rf Ceased WO2019170338A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102018105091.7A DE102018105091A1 (de) 2018-03-06 2018-03-06 HF-Filter, HF-Filterkomponente und Verfahren zur Herstellung eines HF-Filters
DE102018105091.7 2018-03-06

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WO2019170338A1 true WO2019170338A1 (fr) 2019-09-12

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4551696A (en) * 1983-12-16 1985-11-05 Motorola, Inc. Narrow bandwidth microstrip filter
WO1998008303A1 (fr) * 1996-08-23 1998-02-26 Motorola Inc. Filtre a ellipse et son procede de fabrication
US20050230812A1 (en) * 2002-06-25 2005-10-20 Andreas Przadka Electronic component comprising a multilayer substrate and corresponding method of production
WO2007018436A2 (fr) * 2005-08-11 2007-02-15 Norspace As Filtre radiofrequence
WO2008108193A1 (fr) * 2007-02-23 2008-09-12 Panasonic Electric Works Co., Ltd. Filtre passe-bande et procédé de fabrication

Family Cites Families (1)

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Publication number Priority date Publication date Assignee Title
US7061345B2 (en) * 2001-12-14 2006-06-13 Mitsubishi Denki Kabushiki Kaisha Filter circuit with series and parallel elements

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4551696A (en) * 1983-12-16 1985-11-05 Motorola, Inc. Narrow bandwidth microstrip filter
WO1998008303A1 (fr) * 1996-08-23 1998-02-26 Motorola Inc. Filtre a ellipse et son procede de fabrication
US20050230812A1 (en) * 2002-06-25 2005-10-20 Andreas Przadka Electronic component comprising a multilayer substrate and corresponding method of production
WO2007018436A2 (fr) * 2005-08-11 2007-02-15 Norspace As Filtre radiofrequence
WO2008108193A1 (fr) * 2007-02-23 2008-09-12 Panasonic Electric Works Co., Ltd. Filtre passe-bande et procédé de fabrication

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
DONGSU KIM ET AL: "A compact WiMAX diplexer module with LTCC and FBAR technologies", MICROWAVE CONFERENCE, 2009. EUMC 2009. EUROPEAN, IEEE, PISCATAWAY, NJ, USA, 29 September 2009 (2009-09-29), pages 567 - 570, XP031670023, ISBN: 978-1-4244-4748-0 *

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