Castillo‐Mejia et al., 2000 - Google Patents
Qualitative prediction of SiO2 removal rates during chemical mechanical polishingCastillo‐Mejia et al., 2000
- Document ID
- 6057597195177882326
- Author
- Castillo‐Mejia D
- Perlov A
- Beaudoin S
- Publication year
- Publication venue
- Journal of the Electrochemical Society
External Links
Snippet
Chemical mechanical planarization (CMP) is a key technology for integrated circuit manufacturing. It is necessary for the application of Damascene interconnect processing and advanced photolithography. The goal of CMP is to produce locally and globally flat surfaces …
- 238000005498 polishing 0 title abstract description 29
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