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Wistey et al., 2009 - Google Patents

III-V/Ge channel engineering for future CMOS

Wistey et al., 2009

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Document ID
16971218271944840477
Author
Wistey M
Singisetti U
Burek G
Kim E
Thibeault B
Nelson A
Cagnon J
Lee Y
Bank S
Stemmer S
McIntyre P
Gossard A
Rodwell M
Publication year
Publication venue
ECS Transactions

External Links

Snippet

As silicon CMOS reaches its scaling limits, alternative materials become more attractive. Dielectric thickness and parasitic resistance and capacitance do not scale well, so “more than Moore” scaling is required even to keep up with Moore's Law. Replacing Si MOSFET …
Continue reading at www.academia.edu (PDF) (other versions)

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    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
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