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Tomioka et al., 2015 - Google Patents

Vertical Tunnel FETs Using III-V Nanowire/Si Heterojunctions

Tomioka et al., 2015

Document ID
17224367496965353175
Author
Tomioka K
Fukui T
Motohisa J
Publication year
Publication venue
ECS Transactions

External Links

Snippet

Tunnel field-effect transistors (TFETs) have been attracting much attention as building- blocks for future low-power integrated circuits. Here we report recent progress in TFETs with surrounding-gate architecture and III-V nanowire/Si heterojunctions. We also discuss …
Continue reading at iopscience.iop.org (other versions)

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