[go: up one dir, main page]

Wang et al., 2015 - Google Patents

Nanowire optoelectronics

Wang et al., 2015

View PDF
Document ID
17643635758874418648
Author
Wang Z
Nabet B
Publication year
Publication venue
Nanophotonics

External Links

Snippet

Semiconductor nanowires have been used in a variety of passive and active optoelectronic devices including waveguides, photodetectors, solar cells, light-emitting diodes (LEDs), lasers, sensors, and optical antennas. We review the optical properties of these nanowires …
Continue reading at www.researchgate.net (PDF) (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting lasers (SE-lasers)
    • H01S5/183—Surface-emitting lasers (SE-lasers) having a vertical cavity (VCSE-lasers)
    • H01S5/18308—Surface-emitting lasers (SE-lasers) having a vertical cavity (VCSE-lasers) having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well, or supperlattice structures, e.g. single quantum well lasers (SQW lasers), multiple quantum well lasers (MQW lasers), graded index separate confinement hetrostructure lasers (GRINSCH lasers)
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well, or supperlattice structures, e.g. single quantum well lasers (SQW lasers), multiple quantum well lasers (MQW lasers), graded index separate confinement hetrostructure lasers (GRINSCH lasers) in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well, or supperlattice structures, e.g. single quantum well lasers (SQW lasers), multiple quantum well lasers (MQW lasers), graded index separate confinement hetrostructure lasers (GRINSCH lasers) in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
    • G02B6/00—Light guides
    • G02B6/10—Light guides of the optical waveguide type
    • G02B6/12—Light guides of the optical waveguide type of the integrated circuit kind

Similar Documents

Publication Publication Date Title
Wang et al. Nanowire optoelectronics
Couteau et al. Nanowire lasers
Tiguntseva et al. Room-temperature lasing from Mie-resonant nonplasmonic nanoparticles
Xiao et al. Single-nanowire single-mode laser
Zhao et al. Progress of GaN‐based optoelectronic devices integrated with optical resonances
Hsieh et al. Perovskite quantum dot lasing in a gap-plasmon nanocavity with ultralow threshold
Liu et al. Emerging light‐emitting materials for photonic integration
Shang et al. Enhanced optical absorption and slowed light of reduced-dimensional CsPbBr3 nanowire crystal by exciton–polariton
Kim et al. Monolithic InGaAs nanowire array lasers on silicon-on-insulator operating at room temperature
Ning Semiconductor nanolasers
Ho et al. Low-threshold near-infrared GaAs–AlGaAs core–shell nanowire plasmon laser
Tchernycheva et al. Integrated photonic platform based on InGaN/GaN nanowire emitters and detectors
Ma et al. Semiconductor nanowire lasers
Hill Status and prospects for metallic and plasmonic nano-lasers
Zhuang et al. Multicolor semiconductor lasers
Lu et al. Nanopillar quantum well lasers directly grown on silicon and emitting at silicon-transparent wavelengths
KR102696870B1 (en) Nanowire laser structures and manufacturing methods
Fang et al. A review of recent progress in lasers on silicon
US20140301418A1 (en) Photonic crystal cavities and related devices and methods
Polushkin et al. Single-particle perovskite lasers: from material properties to cavity design
Ma et al. Nanoantenna‐enhanced light‐emitting diodes: Fundamental and recent progress
CN110289345B (en) Directional emission and adjustable polarization excimer light-emitting device and manufacturing method thereof
Zhang et al. Ultralow threshold, single-mode InGaAs/GaAs multiquantum disk nanowire lasers
Kim et al. Room‐Temperature InGaAs Nanowire Array Band‐Edge Lasers on Patterned Silicon‐on‐Insulator Platforms
Wong et al. III–V semiconductor whispering-gallery mode micro-cavity lasers: Advances and prospects