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ATE230152T1 - Integrierte schaltung zur speicherung und wiederauffindung von mehreren digitalen bits pro nichtflüchtiger speicherzelle - Google Patents

Integrierte schaltung zur speicherung und wiederauffindung von mehreren digitalen bits pro nichtflüchtiger speicherzelle

Info

Publication number
ATE230152T1
ATE230152T1 AT96933243T AT96933243T ATE230152T1 AT E230152 T1 ATE230152 T1 AT E230152T1 AT 96933243 T AT96933243 T AT 96933243T AT 96933243 T AT96933243 T AT 96933243T AT E230152 T1 ATE230152 T1 AT E230152T1
Authority
AT
Austria
Prior art keywords
memory cell
integrated circuit
bits per
storing
volatile memory
Prior art date
Application number
AT96933243T
Other languages
English (en)
Inventor
Sakhawat M Khan
Original Assignee
Agate Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agate Semiconductor Inc filed Critical Agate Semiconductor Inc
Application granted granted Critical
Publication of ATE230152T1 publication Critical patent/ATE230152T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/562—Multilevel memory programming aspects
    • G11C2211/5624—Concurrent multilevel programming and programming verification
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/563—Multilevel memory reading aspects
    • G11C2211/5632—Multilevel reading using successive approximation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/563—Multilevel memory reading aspects
    • G11C2211/5634—Reference cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/5642—Multilevel memory with buffers, latches, registers at input or output
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/5644—Multilevel memory comprising counting devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/04—Arrangements for selecting an address in a digital store using a sequential addressing device, e.g. shift register, counter

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
AT96933243T 1995-10-06 1996-10-03 Integrierte schaltung zur speicherung und wiederauffindung von mehreren digitalen bits pro nichtflüchtiger speicherzelle ATE230152T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/540,117 US5687114A (en) 1995-10-06 1995-10-06 Integrated circuit for storage and retrieval of multiple digital bits per nonvolatile memory cell
PCT/US1996/015924 WO1997013250A1 (en) 1995-10-06 1996-10-03 Integrated circuit for storage and retrieval of multiple digital bits per nonvolatile memory cell

Publications (1)

Publication Number Publication Date
ATE230152T1 true ATE230152T1 (de) 2003-01-15

Family

ID=24154077

Family Applications (1)

Application Number Title Priority Date Filing Date
AT96933243T ATE230152T1 (de) 1995-10-06 1996-10-03 Integrierte schaltung zur speicherung und wiederauffindung von mehreren digitalen bits pro nichtflüchtiger speicherzelle

Country Status (9)

Country Link
US (3) US5687114A (de)
EP (3) EP0853806B1 (de)
JP (1) JPH11507464A (de)
KR (1) KR100303549B1 (de)
CN (1) CN1146918C (de)
AT (1) ATE230152T1 (de)
DE (1) DE69625494T2 (de)
TW (1) TW303466B (de)
WO (1) WO1997013250A1 (de)

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US6462986B1 (en) 2002-10-08
US5905673A (en) 1999-05-18
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US5687114A (en) 1997-11-11
US20020101778A1 (en) 2002-08-01
DE69625494T2 (de) 2003-10-30
WO1997013250A1 (en) 1997-04-10
KR100303549B1 (ko) 2001-09-29
JPH11507464A (ja) 1999-06-29
EP1239490A3 (de) 2003-05-28
EP0853806A1 (de) 1998-07-22
KR19990064045A (ko) 1999-07-26
EP0853806A4 (de) 1998-10-14
TW303466B (de) 1997-04-21
EP1239490A2 (de) 2002-09-11
DE69625494D1 (de) 2003-01-30
CN1198834A (zh) 1998-11-11
CN1146918C (zh) 2004-04-21
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