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AU2001238453A1 - Multi color detector - Google Patents

Multi color detector

Info

Publication number
AU2001238453A1
AU2001238453A1 AU2001238453A AU3845301A AU2001238453A1 AU 2001238453 A1 AU2001238453 A1 AU 2001238453A1 AU 2001238453 A AU2001238453 A AU 2001238453A AU 3845301 A AU3845301 A AU 3845301A AU 2001238453 A1 AU2001238453 A1 AU 2001238453A1
Authority
AU
Australia
Prior art keywords
color detector
multi color
detector
color
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001238453A
Inventor
Manijeh Razeghi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
MP Technologies LLC
Original Assignee
MP Technologies LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by MP Technologies LLC filed Critical MP Technologies LLC
Publication of AU2001238453A1 publication Critical patent/AU2001238453A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H10F71/1272—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising at least three elements, e.g. GaAlAs or InGaAsP
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Light Receiving Elements (AREA)
AU2001238453A 2000-03-23 2001-02-16 Multi color detector Abandoned AU2001238453A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09534234 2000-03-23
US09/534,234 US6452242B1 (en) 2000-03-23 2000-03-23 Multi color detector
PCT/US2001/005175 WO2001071813A1 (en) 2000-03-23 2001-02-16 Multi color detector

Publications (1)

Publication Number Publication Date
AU2001238453A1 true AU2001238453A1 (en) 2001-10-03

Family

ID=24129228

Family Applications (2)

Application Number Title Priority Date Filing Date
AU2001287256A Abandoned AU2001287256A1 (en) 2000-03-23 2001-02-16 Quantum dots infrared for optoelectronic devices
AU2001238453A Abandoned AU2001238453A1 (en) 2000-03-23 2001-02-16 Multi color detector

Family Applications Before (1)

Application Number Title Priority Date Filing Date
AU2001287256A Abandoned AU2001287256A1 (en) 2000-03-23 2001-02-16 Quantum dots infrared for optoelectronic devices

Country Status (3)

Country Link
US (2) US6452242B1 (en)
AU (2) AU2001287256A1 (en)
WO (2) WO2001071813A1 (en)

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GB2395839A (en) * 2002-11-30 2004-06-02 Sharp Kk MBE growth of p-type nitride semiconductor materials
EP1719188A4 (en) * 2004-01-22 2009-02-25 Advanced Optical Materials Llc PHOTOTRANSISTORS, METHODS OF MAKING PHOTOTRANSISTORS AND METHODS OF DETECTING LIGHT
CN100369203C (en) * 2004-12-03 2008-02-13 中国科学院半导体研究所 Liquid phase epitaxial growth method for growing indium arsenic antimony thin film on gallium arsenic substrate
US7768869B2 (en) * 2005-05-05 2010-08-03 Pgs Americas, Inc. Method for deghosting and water layer multiple reflection attenuation in marine seismic data
ES2297972A1 (en) 2005-05-30 2008-05-01 Universidad Politecnica De Madrid PHOTODETECTOR OF INFRARED INTERMEDIATE BAND AND QUANTIC POINTS.
ES2276624B2 (en) * 2005-12-13 2008-03-16 Universidad Politecnica De Madrid METHOD FOR THE SUPPRESSION OF NON-RADIATIVE RECOMBINATION IN MATERIALS GIVEN WITH DEEP CENTERS.
JP5095260B2 (en) * 2006-05-15 2012-12-12 富士通株式会社 Manufacturing method of semiconductor light emitting device
JP4786440B2 (en) * 2006-07-04 2011-10-05 日本オプネクスト株式会社 Surface incidence type light receiving element and light receiving module
US8067303B1 (en) * 2006-09-12 2011-11-29 Partial Assignment University of Central Florida Solid state energy conversion device
US8221345B2 (en) 2007-05-30 2012-07-17 Smiths Medical Asd, Inc. Insulin pump based expert system
US7652252B1 (en) 2007-10-08 2010-01-26 Hrl Laboratories, Llc Electronically tunable and reconfigurable hyperspectral photon detector
US7755023B1 (en) 2007-10-09 2010-07-13 Hrl Laboratories, Llc Electronically tunable and reconfigurable hyperspectral photon detector
US8093559B1 (en) * 2008-12-02 2012-01-10 Hrl Laboratories, Llc Methods and apparatus for three-color infrared sensors
US8450773B1 (en) * 2010-07-15 2013-05-28 Sandia Corporation Strain-compensated infrared photodetector and photodetector array
WO2012071107A1 (en) * 2010-11-23 2012-05-31 Qd Vision, Inc. Device including semiconductor nanocrystals & method
JP6591758B2 (en) * 2015-02-16 2019-10-16 旭化成エレクトロニクス株式会社 Infrared light emitting device and method for manufacturing infrared light emitting device
JP6908367B2 (en) * 2016-10-19 2021-07-28 旭化成エレクトロニクス株式会社 Infrared light emitting element
CN108269731A (en) * 2016-12-30 2018-07-10 苏州纳维科技有限公司 N-shaped III-nitride semiconductor material and preparation method thereof
CN106815490B (en) * 2017-02-22 2019-02-01 浙江工业大学 Method for determining movement of band gap of semiconductor nanocrystal quantum dot in different media
JPWO2020054764A1 (en) * 2018-09-12 2021-08-30 Ｎｓマテリアルズ株式会社 Infrared sensor and its manufacturing method
CN111106203B (en) * 2018-10-29 2021-04-23 中国科学院苏州纳米技术与纳米仿生研究所 Infrared detector and method of making the same
JP2021057366A (en) * 2019-09-26 2021-04-08 旭化成エレクトロニクス株式会社 Infrared sensor
CN114907848B (en) * 2022-04-25 2023-04-07 苏州大学 Growth method of dual-mode-size InAs/GaAs quantum dot, quantum dot and quantum dot composition

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03201571A (en) 1989-12-28 1991-09-03 Fujitsu Ltd Wavelength multiplexing receiver
US5063426A (en) * 1990-07-30 1991-11-05 At&T Bell Laboratories InP/InGaAs monolithic integrated photodetector and heterojunction bipolar transistor
US5374841A (en) * 1991-12-18 1994-12-20 Texas Instruments Incorporated HgCdTe S-I-S two color infrared detector
US5293050A (en) * 1993-03-25 1994-03-08 International Business Machines Corporation Semiconductor quantum dot light emitting/detecting devices
JP3201571B2 (en) 1995-08-24 2001-08-20 株式会社ホンダアクセス Vehicle roof console device
JP2803719B2 (en) * 1996-03-29 1998-09-24 日本電気株式会社 Semiconductor quantum dot device and method of manufacturing the same
US5925897A (en) * 1997-02-14 1999-07-20 Oberman; David B. Optoelectronic semiconductor diodes and devices comprising same
US5888885A (en) * 1997-05-14 1999-03-30 Lucent Technologies Inc. Method for fabricating three-dimensional quantum dot arrays and resulting products
JPH1168239A (en) * 1997-08-15 1999-03-09 Fujitsu Ltd Manufacturing method of quantum dots
KR100249774B1 (en) * 1997-11-25 2000-03-15 정선종 Growing method of high quality gaas quantum dots
JPH11186631A (en) * 1997-12-19 1999-07-09 Hitachi Ltd Electronic device having a ball element, a semiconductor device and a rotation mechanism
JPH11201571A (en) * 1998-01-13 1999-07-30 Sanyo Electric Co Ltd Gas compressor-expander

Also Published As

Publication number Publication date
US6452242B1 (en) 2002-09-17
US20020195677A1 (en) 2002-12-26
AU2001287256A1 (en) 2001-10-03
WO2001071813A1 (en) 2001-09-27
US6750075B2 (en) 2004-06-15
WO2001071812A1 (en) 2001-09-27

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