CN108346675B - LED or LD array device and its preparation method - Google Patents
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- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 238000000034 method Methods 0.000 claims abstract description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 16
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- 238000001039 wet etching Methods 0.000 claims description 10
- 235000012239 silicon dioxide Nutrition 0.000 claims description 9
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- 238000001312 dry etching Methods 0.000 claims description 7
- 229920002120 photoresistant polymer Polymers 0.000 claims description 6
- 229910002601 GaN Inorganic materials 0.000 claims description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- 238000004020 luminiscence type Methods 0.000 claims description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 description 6
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 101100012902 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) FIG2 gene Proteins 0.000 description 1
- 101100233916 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) KAR5 gene Proteins 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
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- 238000001228 spectrum Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
- H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
- H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
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Abstract
本发明涉及一种发光二极管LED或激光二极管LD阵列器件及其制备方法，所述发光二极管LED或激光二极管LD阵列器件包括若干个密集排布的发光像素单元，所述发光像素单元设置在衬底上；在同一衬底上还设置有控制同一衬底上发光像素单元发光的控制单元。本发明的优点在于：本发明发光二极管LED或激光二极管LD阵列器件，将发光像素单元和控制单元设置在同一衬底上，与控制单元与发光单元通过bonding结合方式相比，大大降低了工艺精准要求；同时，该结构的设置也能适用于尺寸较小的二极管芯片，特别是微米量级的二极管芯片，从而可提高显示器件的分辨率，进而能够延长发光二极管LED或激光二极管LD阵列器件的使用寿命。
The present invention relates to a light emitting diode (LED) or laser diode (LD) array device and a preparation method thereof, wherein the light emitting diode (LED) or laser diode (LD) array device comprises a plurality of densely arranged light emitting pixel units, wherein the light emitting pixel units are arranged on a substrate; a control unit for controlling the light emitting pixel units on the same substrate is also arranged on the same substrate. The advantages of the present invention are as follows: the light emitting diode (LED) or laser diode (LD) array device of the present invention arranges the light emitting pixel units and the control unit on the same substrate, which greatly reduces the process precision requirements compared with the bonding method of the control unit and the light emitting unit; at the same time, the arrangement of the structure can also be applied to diode chips of smaller size, especially micrometer-level diode chips, thereby improving the resolution of the display device, and further extending the service life of the light emitting diode (LED) or laser diode (LD) array device.
Description
技术领域Technical Field
本发明属于显示技术领域，特别涉及一种发光二极管LED或激光二极管LD阵列器件及其制备方法。The invention belongs to the field of display technology, and in particular relates to a light emitting diode (LED) or laser diode (LD) array device and a preparation method thereof.
背景技术Background technique
发光二极管（LED）因具有高效，节能，尺寸小，寿命长等优点而备受瞩目，目前已在显示领域广泛应用，如室外大面积LED阵列显示屏、小面积OLED超薄柔性显示屏，micro-LED阵列显示器件也被视为OLED显示屏之后又一具轻薄及省电优势的显示技术。Light-emitting diodes (LEDs) have attracted much attention due to their advantages such as high efficiency, energy saving, small size and long life. They have been widely used in the display field, such as outdoor large-area LED array displays and small-area OLED ultra-thin flexible displays. Micro-LED array display devices are also regarded as another display technology with the advantages of lightness, thinness and power saving after OLED displays.
半导体激光二极管（LD）是一种用来构建光通信系统的与光纤配套使用的激光器，因其体积小、结构简单、效率高、能直接调制的特点，它能直接作为光通信用光源，也可以作为激光器、放大器的泵浦源，在激光工程研究领域有着十分重要的地位。同样，由于其小的发光点和敏锐的光谱（其高显色性），其在显示领域也有着广泛应用。Semiconductor laser diode (LD) is a laser used in conjunction with optical fiber to build optical communication systems. Due to its small size, simple structure, high efficiency, and direct modulation, it can be used directly as a light source for optical communication, as well as a pump source for lasers and amplifiers, and plays a very important role in the field of laser engineering research. Similarly, due to its small light point and sharp spectrum (its high color rendering), it is also widely used in the display field.
然而不管何种显示技术，都存在各色子像素寿命不一造成的长期使用后显色不准甚至影响使用寿命的问题。However, regardless of the display technology used, there is always the problem of inaccurate color display after long-term use due to the different lifespans of sub-pixels of different colors, which may even affect the service life.
如OLED，其发光层主要由红色荧光材料、绿光材料以及蓝光磷材料三者发光混合，其中一种材料的寿命衰减，就会让整颗OLED像素点失效，但是目前有机发光蓝光磷材料的寿命太短，如何克服此问题，成为从业者必须面对的挑战。OLED在能效和寿命方面还与LED有较大的差距，但目前高分辨率的微LED显示屏制造工艺要比OLED显示屏复杂、困难得多。一块显示屏往往需要数百万乃至上千万的微LED芯片进行排列组装，尤其是对尺寸只有微米量级的LED和与之匹配的控制单元的精确对准、安放等问题，而目前发光二极管（LED）阵列器件中控制单元与发光单元通过bonding结合方式，这种方式对工艺精准要求高，大大增加了工艺难度。同时LED微芯片的尺寸仍然较大，造成显示屏高分辨率不易实现，如何克服这些问题，成为从业者必须面对的挑战。For example, the OLED, whose light-emitting layer is mainly composed of a mixture of red fluorescent materials, green light materials and blue phosphor materials, will cause the entire OLED pixel to fail if the life of one of the materials decays. However, the life of the organic blue phosphor material is too short. How to overcome this problem has become a challenge that practitioners must face. OLED still has a large gap with LED in terms of energy efficiency and life, but the current high-resolution micro-LED display manufacturing process is much more complicated and difficult than OLED display. A display screen often requires millions or even tens of millions of micro-LED chips to be arranged and assembled, especially for the precise alignment and placement of LEDs with a size of only microns and the matching control units. At present, the control unit and the light-emitting unit in the light-emitting diode (LED) array device are combined by bonding, which requires high process precision and greatly increases the process difficulty. At the same time, the size of LED microchips is still large, which makes it difficult to achieve high resolution of the display screen. How to overcome these problems has become a challenge that practitioners must face.
发明内容Summary of the invention
本发明要解决的技术问题是提供一种发光二极管LED或激光二极管LD阵列器件及其制备方法，能够降低发光二极管LED或激光二极管LD阵列器件的工艺难度，且能够提高发光二极管LED或激光二极管LD阵列器件的寿命及分辨率。The technical problem to be solved by the present invention is to provide a light emitting diode (LED) or laser diode (LD) array device and a preparation method thereof, which can reduce the process difficulty of the light emitting diode (LED) or laser diode (LD) array device and can improve the life and resolution of the light emitting diode (LED) or laser diode (LD) array device.
为解决上述技术问题，本发明的技术方案为：一种发光二极管LED或激光二极管LD阵列器件，其创新点在于：所述发光二极管LED或激光二极管LD阵列器件包括若干个密集排布的发光像素单元，所述发光像素单元设置在衬底上；在同一衬底上还设置有控制同一衬底上发光像素单元发光的控制单元。In order to solve the above technical problems, the technical solution of the present invention is: a light emitting diode LED or laser diode LD array device, the innovation of which lies in: the light emitting diode LED or laser diode LD array device includes a plurality of densely arranged light emitting pixel units, and the light emitting pixel units are arranged on a substrate; a control unit for controlling the light emission of the light emitting pixel units on the same substrate is also arranged on the same substrate.
进一步地，所述发光像素单元由与各发光像素单元一一对应的独立控制单元控制。Furthermore, the light-emitting pixel units are controlled by independent control units corresponding to each light-emitting pixel unit one by one.
进一步地，所述独立控制单元包括存储器和开关。Furthermore, the independent control unit includes a memory and a switch.
进一步地，所述发光像素单元由设置在若干个密集排布发光像素单元四周的行与列控制单元控制，且两行控制单元的正负极相反，两列控制单元的正负极相反。Furthermore, the luminous pixel units are controlled by row and column control units arranged around a number of densely arranged luminous pixel units, and the positive and negative poles of the two row control units are opposite, and the positive and negative poles of the two column control units are opposite.
进一步地，所述发光二极管LED或激光二极管LD阵列器件中的发光像素单元最小边的长度≥0.1μm，相邻两发光像素单元间距≥0.3μm。Furthermore, the length of the smallest side of the light-emitting pixel unit in the light-emitting diode LED or laser diode LD array device is ≥0.1 μm, and the distance between two adjacent light-emitting pixel units is ≥0.3 μm.
进一步地，所述发光二极管LED或激光二极管LD阵列器件中的发光像素单元是由单像素点或多像素点构成的。Furthermore, the light-emitting pixel unit in the light-emitting diode LED or laser diode LD array device is composed of a single pixel point or multiple pixel points.
进一步地，所述衬底选用蓝宝石、碳化硅、硅、氧化锌、氮化镓或氮化铝中的任一种。Furthermore, the substrate is selected from any one of sapphire, silicon carbide, silicon, zinc oxide, gallium nitride or aluminum nitride.
一种上述的发光二极管LED或激光二极管LD阵列器件的制备方法，其创新点在于：所述制备方法包括如下步骤：A method for preparing the above-mentioned light emitting diode LED or laser diode LD array device, the innovation of which is that the preparation method comprises the following steps:
（1）在衬底上覆盖一层垫氧化层；(1) Covering the substrate with a pad oxide layer;
（2）在垫氧化层上方覆盖一层氮化硅层；(2) Covering the pad oxide layer with a silicon nitride layer;
（3）在氮化硅层覆盖一层二氧化硅层；(3) Covering the silicon nitride layer with a silicon dioxide layer;
（4）采用干法或湿法刻蚀法选择性刻蚀去除掉部分二氧化硅层、氮化硅层与垫氧化层，得到衬底的部分洁净表面；(4) selectively removing part of the silicon dioxide layer, silicon nitride layer and pad oxide layer by dry or wet etching to obtain a partially clean surface of the substrate;
（5）在衬底的部分洁净表面进行高温LED或LD发光单元的外延生长；(5) epitaxial growth of high-temperature LED or LD light-emitting units on a portion of the clean surface of the substrate;
（6）将生长完毕的LED或LD外延层采用光刻胶保护；(6) Protecting the grown LED or LD epitaxial layer with photoresist;
（7）通过干法或湿法刻蚀，将多余的GaN外延层、二氧化硅层、部分氮化硅层去除；(7) Remove the excess GaN epitaxial layer, silicon dioxide layer, and part of the silicon nitride layer by dry or wet etching;
（8）进一步用湿法刻蚀将剩余的氮化硅层和垫氧化层去除，并得到衬底剩余的干净表面；(8) further removing the remaining silicon nitride layer and the pad oxide layer by wet etching to obtain a clean surface remaining on the substrate;
（9）去除LED或LD外延层光刻胶；(9) Removing photoresist from LED or LD epitaxial layer;
（10）在衬底所露出的洁净表面上进行控制单元的低温工艺生长。(10) A control unit is grown by a low-temperature process on the clean surface exposed by the substrate.
本发明的优点在于：The advantages of the present invention are:
（1）本发明发光二极管LED或激光二极管LD阵列器件，将发光像素单元和控制单元设置在同一衬底上，与控制单元与发光单元通过bonding结合方式相比，大大降低了工艺精准要求；同时，该结构的设置也能适用于尺寸较小的二极管芯片，特别是微米量级的二极管芯片，从而可提高显示器件的分辨率，进而能够延长发光二极管LED或激光二极管LD阵列器件的使用寿命；(1) The light-emitting diode (LED) or laser diode (LD) array device of the present invention arranges the light-emitting pixel unit and the control unit on the same substrate, which greatly reduces the process precision requirements compared with the bonding method of the control unit and the light-emitting unit. At the same time, the arrangement of this structure can also be applied to diode chips of smaller size, especially micrometer-level diode chips, thereby improving the resolution of the display device and further extending the service life of the light-emitting diode (LED) or laser diode (LD) array device.
（2）本发明发光二极管LED或激光二极管LD阵列器件，控制单元与发光像素单元采用两种形式控制，增加了发光像素单元控制的可选性；(2) In the light emitting diode LED or laser diode LD array device of the present invention, the control unit and the light emitting pixel unit are controlled in two forms, which increases the optionality of the light emitting pixel unit control;
（3）本发明发光二极管LED或激光二极管LD阵列器件，其中，将发光二极管LED或激光二极管LD阵列器件中的发光像素单元最小边长度≥0.1μm，相邻两发光像素单元间距≥0.3μm，使得显示阵列器件缩微能力大大增强，有利于获得高分辨显示器件的同时，甚至可以制成UV或Χ射线光阵列显示器；(3) The light emitting diode (LED) or laser diode (LD) array device of the present invention, wherein the minimum side length of the light emitting pixel unit in the light emitting diode (LED) or laser diode (LD) array device is ≥ 0.1 μm, and the distance between two adjacent light emitting pixel units is ≥ 0.3 μm, so that the miniaturization capability of the display array device is greatly enhanced, which is conducive to obtaining a high-resolution display device and can even be made into a UV or X-ray light array display;
（4）本发明发光二极管LED或激光二极管LD阵列器件的制备方法，其中，在衬底上先覆盖垫氧化层，一方面有利于缓解衬底与氮化硅之间的应力失配，从而提高上方材料的晶体质量；另一方面，有利于后期的干法或湿法刻蚀提供对衬底的保护，同时有利于后期对衬底深层清洗，得到高质量与高清洁度的衬底。(4) The method for preparing the light emitting diode (LED) or laser diode (LD) array device of the present invention, wherein a pad oxide layer is first covered on the substrate, which is beneficial for alleviating the stress mismatch between the substrate and silicon nitride, thereby improving the crystal quality of the upper material; on the other hand, it is beneficial for providing protection for the substrate during subsequent dry or wet etching, and is also beneficial for subsequent deep cleaning of the substrate to obtain a high-quality and high-cleanliness substrate.
附图说明BRIEF DESCRIPTION OF THE DRAWINGS
下面结合附图和具体实施方式对本发明作进一步详细的说明。The present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.
图1为实施例中发光二极管LED或激光二极管LD阵列器件第一种结构的示意图。FIG. 1 is a schematic diagram of a first structure of a light emitting diode (LED) or laser diode (LD) array device in an embodiment.
图2为实施例中发光二极管LED或激光二极管LD阵列器件第二种结构的示意图。FIG. 2 is a schematic diagram of a second structure of a light emitting diode (LED) or laser diode (LD) array device in the embodiment.
图3～图12为实施例中发光二极管LED或激光二极管LD阵列器件的制备流程示意图。3 to 12 are schematic diagrams of the preparation process of the light emitting diode LED or laser diode LD array device in the embodiments.
具体实施方式Detailed ways
下面的实施例可以使本专业的技术人员更全面地理解本发明，但并不因此将本发明限制在所述的实施例范围之中。The following embodiments can enable those skilled in the art to more fully understand the present invention, but the present invention is not limited to the scope of the embodiments.
实施例Example
本实施例发光二极管LED或激光二极管LD阵列器件，有多种结构，第一种结构，如图1所示，包括若干个呈矩形阵列排布的发光像素单元1，发光像素单元1由呈蜂眼状密集排布的9个子发光像素点组成，其中每个子像素点尺寸为1 mil，相邻两发光像素单元1间距为0.3μm，且发光像素单元1设置在硅衬底5上；在同一硅衬底5上还设置有控制同一硅衬底5上发光像素单元1发光的控制单元2，且发光像素单元1由与各发光像素单元1一一对应的独立控制单元2控制，控制单元2包括电源正极21、电源负极22、开关单元23和能输出0/1的Flash存储器24，电源正极21和电源负极22设置在发光像素单元1的两端，存储器24与发光像素单元1横向固定，且存储器24位于电源负极22设置，电源正、负极与存储器之间通过开关单元23联接。The light emitting diode LED or laser diode LD array device of this embodiment has multiple structures. The first structure, as shown in FIG. 1 , includes a plurality of light emitting pixel units 1 arranged in a rectangular array. The light emitting pixel unit 1 is composed of 9 sub-light emitting pixel points densely arranged in a bee-eye shape, wherein the size of each sub-pixel point is 1 mil, and the distance between two adjacent light emitting pixel units 1 is 0.3 μm, and the light emitting pixel unit 1 is arranged on a silicon substrate 5; a control unit 2 for controlling the light emission of the light emitting pixel units 1 on the same silicon substrate 5 is also arranged on the same silicon substrate 5, and the light emitting pixel units 1 are controlled by independent control units 2 corresponding to each light emitting pixel unit 1 one by one, and the control unit 2 includes a positive power supply electrode 21, a negative power supply electrode 22, a switch unit 23 and a Flash memory 24 capable of outputting 0/1, the positive power supply electrode 21 and the negative power supply electrode 22 are arranged at both ends of the light emitting pixel unit 1, the memory 24 is transversely fixed to the light emitting pixel unit 1, and the memory 24 is arranged at the negative power supply electrode 22, and the positive and negative power supplies and the memory are connected through the switch unit 23.
第二种结构，如图2所示，包括若干个呈矩形阵列排布的发光像素单元3，发光像素单元3由呈蜂眼状密集排布的9个子发光像素点组成，其中每个子像素点尺寸为1 mil，相邻两发光像素单元3间距为0.3μm，且发光像素单元3设置在硅衬底5上；在同一硅衬底5上还设置有控制同一硅衬底上发光像素单元3发光的控制单元4，且发光像素单元3由设置在若干个密集排布发光像素单元3四周的行与列控制单元4控制，控制单元4包括对称设置的行（列）开关正极41和行（列）开关负极42。The second structure, as shown in FIG2 , includes a plurality of luminescent pixel units 3 arranged in a rectangular array, wherein the luminescent pixel unit 3 is composed of 9 sub-luminescent pixel points densely arranged in a bee-eye shape, wherein the size of each sub-pixel point is 1 mil, and the spacing between two adjacent luminescent pixel units 3 is 0.3 μm, and the luminescent pixel unit 3 is arranged on a silicon substrate 5; a control unit 4 for controlling the luminescence of the luminescent pixel unit 3 on the same silicon substrate is also arranged on the same silicon substrate 5, and the luminescent pixel unit 3 is controlled by a row and column control unit 4 arranged around the plurality of densely arranged luminescent pixel units 3, and the control unit 4 includes a symmetrically arranged row (column) switch anode 41 and a row (column) switch cathode 42.
本实施例中，以第一种结构为例，该结构发光二极管LED或激光二极管LD阵列器件的制备方法，具体包括如下步骤：In this embodiment, taking the first structure as an example, the method for preparing the light emitting diode LED or laser diode LD array device of the structure specifically includes the following steps:
（1）如图3所示，在硅衬底5上覆盖一层厚度为5Å~20nm的垫氧化层6；(1) As shown in FIG3 , a pad oxide layer 6 having a thickness of 5Å to 20nm is covered on the silicon substrate 5;
（2）如图4所示，在垫氧化层6上方覆盖一层厚度为1nm~3um的氮化硅层7；(2) As shown in FIG. 4 , a silicon nitride layer 7 having a thickness of 1 nm to 3 um is covered on the pad oxide layer 6;
（3）如图5所示，在氮化硅层7覆盖一层厚度为1nm~3um的二氧化硅层8；(3) As shown in FIG. 5 , a silicon dioxide layer 8 with a thickness of 1 nm to 3 um is covered on the silicon nitride layer 7;
（4）如图6所示，采用干法或湿法刻蚀法选择性刻蚀去除掉部分二氧化硅层8、氮化硅层7与垫氧化层6，得到衬底的部分洁净表面；(4) As shown in FIG. 6 , a portion of the silicon dioxide layer 8 , the silicon nitride layer 7 and the pad oxide layer 6 are selectively etched away by dry or wet etching to obtain a partially clean surface of the substrate;
（5）如图7所示，在硅衬底5的部分洁净表面进行高温LED或LD发光单元的外延生长，形成外延层9；(5) As shown in FIG. 7 , epitaxial growth of a high-temperature LED or LD light-emitting unit is performed on a portion of the clean surface of the silicon substrate 5 to form an epitaxial layer 9;
（6）如图8所示，将生长完毕的LED或LD外延层9采用光刻胶10保护；(6) As shown in FIG. 8 , the grown LED or LD epitaxial layer 9 is protected by a photoresist 10;
（7）如图9所示，通过干法或湿法刻蚀，将多余的GaN外延层9、二氧化硅层8、部分氮化硅层7去除；(7) As shown in FIG. 9 , the excess GaN epitaxial layer 9, the silicon dioxide layer 8, and part of the silicon nitride layer 7 are removed by dry or wet etching;
（8）如图10所示，进一步用湿法刻蚀将剩余的氮化硅层7和垫氧化层6去除，并得到硅衬底5剩余的干净表面；(8) As shown in FIG. 10 , the remaining silicon nitride layer 7 and the pad oxide layer 6 are further removed by wet etching to obtain a remaining clean surface of the silicon substrate 5;
（9）如图11所示，去除LED或LD外延层光刻胶10，构成发光像素单元1；(9) As shown in FIG. 11 , the LED or LD epitaxial layer photoresist 10 is removed to form a light-emitting pixel unit 1;
（10）如图12所示，在硅衬底5所露出的洁净表面上进行控制单元2的低温工艺生长。(10) As shown in FIG. 12 , the control unit 2 is grown by a low temperature process on the clean surface exposed by the silicon substrate 5 .
实施例中发光二极管LED或激光二极管LD阵列器件，将发光像素单元和控制单元设置在同一衬底上，与控制单元与发光单元通过bonding结合方式相比，大大降低了工艺精准要求；同时，该结构的设置也能适用于尺寸较小的二极管芯片，特别是微米量级的二极管芯片，从而可提高显示器件的分辨率，进而能够延长发光二极管LED或激光二极管LD阵列器件的使用寿命；同时，实施过程中，控制发光二极管LED或激光二极管LD阵列器件中的发光像素单元最小边长度≥0.1μm，相邻两发光像素单元间距≥0.3μm，使得显示阵列器件缩微能力大大增强，有利于获得高分辨显示器件的同时，甚至可以制成UV或Χ射线光阵列显示器。In the light emitting diode LED or laser diode LD array device in the embodiment, the light emitting pixel unit and the control unit are arranged on the same substrate, which greatly reduces the process precision requirement compared with the control unit and the light emitting unit being combined by bonding; at the same time, the arrangement of this structure can also be applicable to diode chips of smaller size, especially diode chips of micron level, so as to improve the resolution of the display device, and further extend the service life of the light emitting diode LED or laser diode LD array device; at the same time, during the implementation process, the minimum side length of the light emitting pixel unit in the light emitting diode LED or laser diode LD array device is controlled to be ≥0.1μm, and the distance between two adjacent light emitting pixel units is ≥0.3μm, so that the miniaturization capability of the display array device is greatly enhanced, which is conducive to obtaining a high-resolution display device, and can even be made into a UV or X-ray light array display.
以上显示和描述了本发明的基本原理和主要特征以及本发明的优点。本行业的技术人员应该了解，本发明不受上述实施例的限制，上述实施例和说明书中描述的只是说明本发明的原理，在不脱离本发明精神和范围的前提下，本发明还会有各种变化和改进，这些变化和改进都落入要求保护的本发明范围内。本发明要求保护范围由所附的权利要求书及其等效物界定。The above shows and describes the basic principles and main features of the present invention and the advantages of the present invention. It should be understood by those skilled in the art that the present invention is not limited to the above embodiments. The above embodiments and descriptions are only for explaining the principles of the present invention. Without departing from the spirit and scope of the present invention, the present invention may have various changes and improvements, which fall within the scope of the present invention to be protected. The scope of protection of the present invention is defined by the attached claims and their equivalents.
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