CN109855732B - THz detector based on periodic grating drain metal gate MOSFET - Google Patents
THz detector based on periodic grating drain metal gate MOSFET Download PDFInfo
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- 239000002184 metal Substances 0.000 title claims abstract description 35
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- 238000001514 detection method Methods 0.000 abstract description 10
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- 238000005516 engineering process Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 6
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- 238000003384 imaging method Methods 0.000 description 2
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- 230000005855 radiation Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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- 238000006243 chemical reaction Methods 0.000 description 1
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- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
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- 239000010703 silicon Substances 0.000 description 1
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- H—ELECTRICITY
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- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J3/42—Absorption spectrometry; Double beam spectrometry; Flicker spectrometry; Reflection spectrometry
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- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
- H10F30/282—Insulated-gate field-effect transistors [IGFET], e.g. MISFET [metal-insulator-semiconductor field-effect transistor] phototransistors
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Abstract
本发明公开了一种基于周期性光栅化漏极金属栅MOSFET太赫兹探测器，包括具有周期性光栅化漏极及其各种不同图案形式的金属栅MOSFET、低噪声前置放大器和电压反馈回路；金属栅MOSFET的漏极均用于接收太赫兹信号，金属栅MOSFET的栅极经一号偏置电阻连接一号偏置电压源，金属栅MOSFET的源极和低噪声前置放大器的正向输入端之间连接有一号隔直电容；低噪声前置放大器的正向输入端经二号偏置电阻连接二号偏置电压源；电压反馈回路包括反馈电阻、接地电阻、二号隔直电容和三号隔直电容。本发明通过调节漏极的光栅化结构参数来实现THz响应波段范围的调节，从而提高探测器的探测灵敏度，实现窄带(甚至点频)太赫兹探测。
The invention discloses a terahertz detector based on periodic grating drain metal gate MOSFET, comprising a metal gate MOSFET with periodic grating drain and its various pattern forms, a low-noise preamplifier and a voltage feedback loop ; The drain of the metal gate MOSFET is used to receive the terahertz signal, the gate of the metal gate MOSFET is connected to the No. 1 bias voltage source through the No. 1 bias resistor, the source of the metal gate MOSFET and the forward direction of the low noise preamplifier A No. 1 DC blocking capacitor is connected between the input terminals; the forward input terminal of the low-noise preamplifier is connected to No. 2 bias voltage source through No. 2 bias resistor; the voltage feedback loop includes a feedback resistor, a grounding resistor, and No. 2 DC blocking capacitor. and DC blocking capacitor No. 3. The invention realizes the adjustment of the THz response band range by adjusting the grating structure parameters of the drain, thereby improving the detection sensitivity of the detector and realizing narrow-band (even point frequency) terahertz detection.
Description
Technical Field
The invention relates to the technical field of terahertz detectors, in particular to a metal gate MOSFET terahertz detector based on a periodic grating drain electrode.
Background
The terahertz wave is an electromagnetic wave between microwave and infrared light on an electromagnetic spectrum, the frequency of the terahertz wave is about 0.1-10 THz, and the wavelength corresponds to 3 mm-30 mu m. The terahertz technology is one of the leading edge and hot spot fields of current information science and technology research, and has been widely concerned by research institutions in various countries in the world in recent years. Developed countries in the United states, the Japan and the Europe successively evaluate the terahertz technology as ten major technologies for changing the future world and ten major key strategic targets for the national strut technology, and great investment is invested to tamp the international status in the terahertz field. Terahertz has a wide application prospect, and has wide technical application in the fields of astrophysics, material science, biomedicine, environmental science, spectrum and imaging technology, information science and technology and the like. The terahertz technology can remarkably improve the strength of China in the aspects of aerospace, space communication, biomedical treatment, even food detection and the like. The terahertz detector serving as a terahertz application basis is a key component for terahertz security and detection.
Due to the fact that any conductor lead brings about extremely serious parasitic effect in the terahertz frequency band, the performance of most detectors based on III-V/II-VI process is difficult to control, even the detectors do not work, and therefore the practicability of the terahertz detectors is restricted. Development of room temperature terahertz detectors based on CMOS compatible processes is the basis for realizing low-cost and large-scale popularization of terahertz detection and array imaging. However, the existing detectors based on the CMOS compatible process generally have the disadvantages of slow response speed, low sensitivity, high price, and the like, and generally need to work at low temperature, which greatly limits the integrated application and development of the terahertz technology. Therefore, the development of the CMOS compatible room temperature terahertz detector with high responsivity, high sensitivity and low price becomes a problem which needs to be solved urgently in the integration application and development process of the terahertz technology.
Disclosure of Invention
The invention provides a periodic-rasterization-based drain metal gate MOSFET terahertz detector, which realizes the adjustment of THz response waveband range by adjusting the rasterization structure parameters (the width, the length, the area, the period and the pattern form of a grating) of a drain, thereby improving the detection sensitivity of the detector; grating structures with adjustable periods and various different pattern forms are introduced to replace the drain electrode of the original metal gate MOSFET through photoetching, nano-imprinting and regulation and control of artificial microstructure materials, drain electrode rasterization prepared from CMOS compatible low-dimensional semiconductor materials (such as nano wires) is realized, resonance is generated between the drain electrode and terahertz waves, a plasma resonance effect is enhanced, and therefore the response speed of the detector is improved.
The purpose of the invention is realized by the following technical scheme.
The invention relates to a terahertz detector based on a metal gate MOSFET (metal-oxide-semiconductor field effect transistor) with a periodic grating drain electrode, which comprises the metal gate MOSFET with the periodic grating drain electrode and various different pattern forms, a low-noise preamplifier and a voltage feedback loop;
the drain electrodes of the metal gate MOSFET are used for receiving terahertz signals, the grid electrode of the metal gate MOSFET is connected with a first bias voltage source through a first bias resistor, and a first blocking capacitor is connected between the source electrode of the metal gate MOSFET and the positive input end of the low-noise preamplifier; the positive input end of the low-noise preamplifier is connected with a second bias voltage source through a second bias resistor;
the voltage feedback loop comprises a feedback resistor, a grounding resistor, a second blocking capacitor and a third blocking capacitor, the feedback resistor is connected between the output end and the reverse input end of the low-noise preamplifier, one end of the grounding resistor is connected with the reverse input end of the low-noise preamplifier, the other end of the grounding resistor is grounded through the second blocking capacitor, one end of the third blocking capacitor is connected with the output end of the low-noise preamplifier, and the other end of the third blocking capacitor is grounded.
The first bias voltage source and the first bias resistor are used for providing direct current power supply for the metal gate MOSFET, and the THz response waveband range is adjusted by adjusting the grating structure parameters (the width, the length, the area, the period and the pattern form of the grating) of the drain electrode of the metal gate MOSFET.
Compared with the prior art, the technical scheme of the invention has the following beneficial effects:
(1) the invention is based on a silicon-based CMOS (complementary metal oxide semiconductor) process, is convenient to integrate with a back-end circuit, is easy to realize large-scale mass production, and further reduces the cost of the detector.
(2) The invention can realize the adjustment of THz response wave band range by adjusting the grating structure parameters (the width, the length, the area, the period and the pattern form of the grating) of the drain electrode.
(3) The method for rasterizing the metal gate MOSFET drain electrode can solve the problems of diffusion and loss of weak terahertz signals in space and plasma excited by a drain region metal structure in the transmission process.
(4) The invention does not need to use an antenna, and can effectively avoid the problems of large loss of the on-chip antenna, low gain and radiation efficiency, large verification difficulty through DRC design rules and the like; the chip area is greatly reduced, and the production cost is greatly reduced.
(5) The invention can utilize the regulation and control functions of the grating on the resonance principle of light and the like to enable the rasterized drain electrode to generate resonance with the terahertz wave, thereby improving the photoelectric conversion efficiency.
Drawings
FIG. 1 is a schematic diagram of two metal gate MOSFETs with a periodically rasterized drain structure and different grating pattern forms;
fig. 2 is a circuit diagram of a terahertz detector based on a periodic rasterized drain metal gate MOSFET.
Reference numerals: a Vb1 first bias voltage source, a Vb2 second bias voltage source, an Rb1 first bias resistor, an Rb2 second bias resistor, a C1 first blocking capacitor, a C2 second blocking capacitor, a C3 third blocking capacitor, a Q1 metal gate MOSFET, a Q2 low-noise preamplifier, an Rf feedback resistor, an Rg ground resistor and a GND ground.
Detailed Description
The invention is further described below with reference to the accompanying drawings.
The invention is based on a periodic rasterized drain metal-gate MOSFET terahertz detector, as shown in fig. 1 and 2, comprising a metal-gate MOSFET Q1 with a periodically rasterized drain and its various pattern forms, a low noise preamplifier Q2 and a voltage feedback loop.
And the drain electrodes Grating-D of the metal gate MOSFET Q1 are all used for receiving terahertz signals. The grid Gate of the metal Gate MOSFET Q1 is connected with and loaded with a first bias voltage source Vb1 through a first bias resistor Rb1 and used for providing direct current power supply for the metal Gate MOSFET Q1, and the THz response wave band range can be adjusted by adjusting the Grating structure parameters (the width, the length, the area, the period and the pattern form) of the grid electrode Grating-D of the drain electrode of the metal Gate MOSFET Q1, so that the detection sensitivity of the detector is improved. Wherein, the first bias voltage source Vb1 is a fixed DC bias voltage source
And a first DC blocking capacitor C1 is connected between the source S of the metal gate MOSFET Q1 and the positive input end of the low-noise preamplifier Q2. The positive input end of the low-noise preamplifier Q2 is connected with a bias voltage source No. two (Vb2) through a bias resistor No. two Rb 2. The second bias resistor Rb2 and the second bias voltage source Vb2 are used for supplying power to the low-noise preamplifier Q2; the second bias voltage source Vb2 is a fixed direct current bias voltage source.
The voltage feedback loop mainly comprises a feedback resistor Rf, a grounding resistor Rg, a second blocking capacitor C2 and a third blocking capacitor C3. The feedback resistor Rf is connected between the output end and the reverse input end of the low-noise preamplifier Q2, one end of the grounding resistor Rg is connected with the reverse input end of the low-noise preamplifier Q2, the other end of the grounding resistor Rg is grounded GND through a second blocking capacitor C2, one end of the third blocking capacitor C3 is connected with the output end of the low-noise preamplifier Q2, and the other end of the third blocking capacitor C3 is grounded GND. Wherein, the gain of the low noise preamplifier Q2 can be adjusted by changing the resistance values of the feedback resistor Rf and the grounding resistor Rg.
According to the terahertz detection device and the terahertz detection method, the output voltage signal of the terahertz detector based on the metal gate MOSFET (metal-oxide-semiconductor field effect transistor) with the periodically-rasterized drain electrode is a direct-current voltage signal, the magnitude of the direct-current voltage signal is in direct proportion to the radiation intensity of the terahertz signal, and the intensity information of the incident terahertz signal can be obtained according to the magnitude of the output voltage signal of the terahertz detector, so that terahertz detection is realized.
While the present invention has been described in terms of its functions and operations with reference to the accompanying drawings, it is to be understood that the invention is not limited to the precise functions and operations described above, and that the above-described embodiments are illustrative rather than restrictive, and that various changes and modifications may be effected therein by one skilled in the art without departing from the scope or spirit of the invention as defined by the appended claims.
Claims (2)
1. The terahertz detector is characterized by comprising a metal gate MOSFET (Q1) with a periodically-rasterized drain electrode and various different pattern forms of the periodically-rasterized drain electrode, a low-noise preamplifier (Q2) and a voltage feedback loop;
the grid electrode of the metal grid MOSFET (Q1) is connected with a first bias voltage source (Vb1) through a first bias resistor (Rb1), and a first blocking capacitor (C1) is connected between the source electrode of the metal grid MOSFET (Q1) and the positive input end of the low-noise preamplifier (Q2);
the positive input end of the low-noise preamplifier (Q2) is connected with a bias voltage source (Vb2) through a bias resistor (Rb 2);
the voltage feedback loop comprises a feedback resistor (Rf), a ground resistor (Rg), a second blocking capacitor (C2) and a third blocking capacitor (C3), the feedback resistor (Rf) is connected between the output end and the reverse input end of the low-noise preamplifier (Q2), one end of the ground resistor (Rg) is connected with the reverse input end of the low-noise preamplifier (Q2), the other end of the ground resistor (Rg) is Grounded (GND) through the second blocking capacitor (C2), one end of the third blocking capacitor (C3) is connected with the output end of the low-noise preamplifier (Q2), and the other end of the third blocking capacitor (C3) is Grounded (GND);
the drain electrode of the metal gate MOSFET (Q1) is used for receiving the terahertz signal, wherein the adjustment of the THz response wave band range is realized by adjusting the rasterization structure parameters of the drain electrode of the metal gate MOSFET (Q1), and the rasterization structure parameters comprise the width, the length, the area, the period and the pattern form of the grating.
2. The terahertz detector based on the periodic rasterization drain metal gate MOSFET (MRMOSFET) as recited in claim 1, wherein a first bias voltage source (Vb1) and a first bias resistor (Rb1) are used for providing direct current power supply for the metal gate MOSFET (Q1).
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811458932.5A CN109855732B (en) | 2018-11-30 | 2018-11-30 | THz detector based on periodic grating drain metal gate MOSFET |
| LU101403A LU101403B1 (en) | 2018-11-30 | 2019-09-19 | Metal gate MOSFET terahertz detector based on periodically rasterized drain |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201811458932.5A CN109855732B (en) | 2018-11-30 | 2018-11-30 | THz detector based on periodic grating drain metal gate MOSFET |
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| Publication Number | Publication Date |
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| CN109855732A CN109855732A (en) | 2019-06-07 |
| CN109855732B true CN109855732B (en) | 2021-03-16 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7420225B1 (en) * | 2005-11-30 | 2008-09-02 | Sandia Corporation | Direct detector for terahertz radiation |
| JP5473616B2 (en) * | 2009-02-09 | 2014-04-16 | 独立行政法人理化学研究所 | Terahertz electromagnetic wave detection device and detection method thereof |
| DE102011076840B4 (en) * | 2011-05-31 | 2013-08-01 | Johann Wolfgang Goethe-Universität Frankfurt am Main | A monolithically integrated antenna and receiver circuit and THz heterodyne receiver and imaging system comprising the same and use thereof for detecting electromagnetic radiation in the THz frequency range |
| CN102279476B (en) * | 2011-07-15 | 2013-06-12 | 中国科学院苏州纳米技术与纳米仿生研究所 | High-speed electrically-modulating terahertz modulator |
| KR101388655B1 (en) * | 2012-05-29 | 2014-04-25 | 한국전기연구원 | Terahertz Detection Apparatus having Asymmetric Structure in FET for Response Enhancement |
| US20160172527A1 (en) * | 2012-12-03 | 2016-06-16 | Sandia Corporation | Photodetector with Interdigitated Nanoelectrode Grating Antenna |
| CN105140248B (en) * | 2015-07-23 | 2018-02-06 | 南京大学 | A kind of high responsive operation method based on CMOS Terahertz sensors |
| CN105300530B (en) * | 2015-11-10 | 2018-07-31 | 中国科学院半导体研究所 | Terahertz wave detector with reading circuit |
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| LU101403B1 (en) | 2020-01-20 |
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