CN119446902B - Substrate processing method, substrate, photolithography method and semiconductor device - Google Patents
Substrate processing method, substrate, photolithography method and semiconductor device Download PDFInfo
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- CN119446902B CN119446902B CN202510047077.2A CN202510047077A CN119446902B CN 119446902 B CN119446902 B CN 119446902B CN 202510047077 A CN202510047077 A CN 202510047077A CN 119446902 B CN119446902 B CN 119446902B
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- 239000000758 substrate Substances 0.000 title claims abstract description 158
- 238000000034 method Methods 0.000 title claims abstract description 34
- 239000004065 semiconductor Substances 0.000 title claims abstract description 21
- 238000003672 processing method Methods 0.000 title claims abstract description 18
- 238000000206 photolithography Methods 0.000 title claims description 9
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 60
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 49
- 230000005661 hydrophobic surface Effects 0.000 claims abstract description 44
- 239000000126 substance Substances 0.000 claims abstract description 36
- 239000000853 adhesive Substances 0.000 claims abstract description 22
- 230000001070 adhesive effect Effects 0.000 claims abstract description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 21
- 238000012545 processing Methods 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims abstract description 11
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 10
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 10
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 5
- 239000010980 sapphire Substances 0.000 claims abstract description 5
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims abstract description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 claims 1
- 238000001259 photo etching Methods 0.000 abstract description 13
- 230000000694 effects Effects 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000004061 bleaching Methods 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 36
- NEXSMEBSBIABKL-UHFFFAOYSA-N hexamethyldisilane Chemical compound C[Si](C)(C)[Si](C)(C)C NEXSMEBSBIABKL-UHFFFAOYSA-N 0.000 description 14
- 239000000243 solution Substances 0.000 description 11
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 238000011161 development Methods 0.000 description 6
- 238000001039 wet etching Methods 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 4
- 230000001464 adherent effect Effects 0.000 description 4
- 238000010504 bond cleavage reaction Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
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- 238000003384 imaging method Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/76—Patterning of masks by imaging
- G03F1/78—Patterning of masks by imaging by charged particle beam [CPB], e.g. electron beam patterning of masks
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The application provides a substrate processing method, a substrate, a photoetching method and a semiconductor device, and relates to the technical field of semiconductor device manufacturing. The substrate processing method comprises the steps of bombarding the surface of a substrate by adopting an ion beam to form a surface to be processed, wherein the surface to be processed comprises a chemical bond fracture area, the chemical bond fracture area comprises a plurality of active sites formed by chemical bond fracture, the substrate is made of hydrophilic materials, the hydrophilic materials comprise at least one of silicon dioxide, sapphire, silicon carbide, silicon nitride, gallium nitride and aluminum nitride, adhesive gas is attached to the surface to be processed to form a hydrophobic surface, the hydrophobic surface is used for adhering photoresist, the adhesive gas comprises nonpolar molecules, and the nonpolar molecules are combined with the active sites to form the hydrophobic surface. The embodiment of the application can effectively improve the adhesiveness of the photoresist on the substrate, reduce the possibility of photoresist bleaching or sidetrack during subsequent processing, thereby improving the photoetching effect, avoiding the occurrence of semiconductor processing failure and reducing the production cost.
Description
Technical Field
The application relates to the technical field of semiconductor manufacturing, in particular to a substrate processing method, a substrate, a photoetching method and a semiconductor device.
Background
The photoetching process belongs to an important link in the field of semiconductor device processing, wherein photoresist is coated as a key step, and one of the key evaluation criteria of the process is the adhesiveness of the photoresist on a substrate. However, the surface of the substrate such as silicon dioxide, sapphire and the like is hydrophilic, and the nonpolar or low-polarity resin molecules of the photoresist have poor affinity, so that the photoresist has poor adhesion, the subsequent development step is easy to generate the problems of 'photoresist drifting', serious sidetrack and the like in a wet etching process, the photoetching effect is reduced, and even the semiconductor processing failure is caused.
Disclosure of Invention
The embodiment of the application provides a substrate processing method, a substrate, a photoetching method and a semiconductor device, which can solve the problems that the adhesion of the existing photoresist is poor, the subsequent processing is easy to influence, the photoetching effect is reduced and even the semiconductor processing is failed.
In order to achieve the object, embodiments of the present application provide the following solutions.
According to an aspect of an embodiment of the present application, there is provided a substrate processing method including:
Bombarding the surface of a substrate by adopting an ion beam to form a surface to be processed, wherein the surface comprises a chemical bond fracture area, the chemical bond fracture area comprises a plurality of active sites formed by chemical bond fracture, the substrate is made of hydrophilic materials, and the hydrophilic materials comprise at least one of silicon dioxide, sapphire, silicon carbide, silicon nitride, gallium nitride and aluminum nitride;
Attaching an adhesive gas to the surface to be processed to form a hydrophobic surface, wherein the hydrophobic surface is used for adhering photoresist, and the adhesive gas comprises nonpolar molecules, and the nonpolar molecules are combined with the active sites to form the hydrophobic surface.
In one possible implementation, the bombarding the surface of the substrate with the ion beam includes:
and bombarding the surface of the substrate by using Ar ion beams for a first preset time, and forming a chemical bond fracture area on the surface to be processed.
In one possible implementation, the parameters of the first preset time and ion beam bombardment are determined according to the type of the substrate and the conditions of chemical bond cleavage of the substrate surface.
In one possible implementation, the first preset time is 30 seconds, and the parameters of ion beam bombardment include ion beam voltage 500V, ion beam current 300mA, radio frequency power 350W and incident angle 110 degrees.
In one possible implementation, the adhering an adhesive gas to the surface to be processed includes:
placing the substrate with the surface to be processed formed in a space formed by the adhesive gas;
and processing the substrate at a high temperature for a second preset time to form the hydrophobic surface.
In one possible implementation, the adhesion gas is HMDS, the second preset time is 60 seconds, and the temperature at which the substrate is processed is 150 ℃.
According to an aspect of an embodiment of the present application, there is provided a substrate, at least one side of which is provided with a hydrophobic surface, the hydrophobic surface being formed by the substrate processing method as described above.
According to an aspect of an embodiment of the application, there is provided a lithographic method, the method comprising:
Forming an imaged photoresist mask based on a hydrophobic surface of a substrate, the substrate comprising a substrate as described above;
And etching the substrate to obtain a target product.
In one possible implementation, the etching the substrate includes:
etching the substrate for a third preset time by using a solution with a preset concentration, and removing the photoresist mask on the substrate by using acetone.
According to an aspect of an embodiment of the present application, there is provided a semiconductor device including a target product obtained by the photolithography method as described above.
The technical scheme provided by the embodiment of the application has the beneficial effects that:
The substrate processing method comprises the steps of bombarding the surface of a substrate by adopting an ion beam to form a surface to be processed, wherein the surface to be processed comprises a chemical bond breaking area, the chemical bond breaking area comprises a plurality of active sites formed by breaking chemical bonds, adhering adhesive gas to the surface to be processed to form a hydrophobic surface, the hydrophobic surface is used for adhering photoresist, the adhesive gas comprises nonpolar molecules, and the nonpolar molecules are combined with the active sites to form the hydrophobic surface. The embodiment of the application can effectively improve the adhesiveness of the photoresist on the substrate, reduce the possibility of photoresist bleaching or sidetrack during subsequent processing, thereby improving the photoetching effect, avoiding the occurrence of semiconductor processing failure and reducing the production cost.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following description will simply refer to the drawings that are required to be used in the description of the embodiments of the present application.
FIG. 1 is a flow chart of a method for processing a substrate according to an embodiment of the present application;
FIG. 2 is a block diagram of a substrate provided by an embodiment of the present application;
FIG. 3 is a flow chart of a lithographic method according to an embodiment of the present application;
FIG. 4 is a flowchart illustrating a photolithography method according to an embodiment of the present application;
Fig. 5 is a block diagram of a semiconductor device according to an embodiment of the present application.
Description of the drawings:
1.2, a substrate and a hydrophobic surface.
Detailed Description
Embodiments of the present application are described below with reference to the drawings in the present application. It should be understood that the embodiments described below with reference to the drawings are exemplary descriptions for explaining the technical solutions of the embodiments of the present application, and the technical solutions of the embodiments of the present application are not limited.
As used herein, the singular forms "a", "an", "the" and "the" are intended to include the plural forms as well, unless expressly stated otherwise, as understood by those skilled in the art. It will be further understood that the terms "comprises" and "comprising," when used in this specification, specify the presence of stated features, information, data, steps, operations, elements, and/or components, but do not preclude the presence or addition of other features, information, data, steps, operations, elements, components, and/or groups thereof, that may be included in the present specification. It will be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to the other element or intervening elements may be present. Further, "connected" or "coupled" as used herein may include wirelessly connected or wirelessly coupled. The term "and/or" as used herein indicates at least one of the items defined by the term, e.g. "a and/or B" indicates implementation as "a", or as "a and B".
For the purpose of making the objects, technical solutions and advantages of the present invention more apparent, the following detailed description of the embodiments of the present invention will be given with reference to the accompanying drawings.
The technical solutions of the embodiments of the present invention and technical effects produced by the technical solutions of the present invention are described below by describing several exemplary embodiments. It should be noted that the following embodiments may be referred to, or combined with each other, and the description will not be repeated for the same terms, similar features, similar implementation steps, and the like in different embodiments.
The application provides a substrate processing method, a substrate, a photoetching method and a semiconductor device, and aims to solve at least one technical problem in the prior art.
In an embodiment of the present application, as shown in fig. 1, there is provided a substrate processing method, including:
s101, bombarding the surface of the substrate by adopting an ion beam to form a surface to be processed comprising a chemical bond fracture area.
Optionally, the substrate is made of hydrophilic material, and the material on top of the substrate may be silicon dioxide, silicon, sapphire, silicon carbide, silicon nitride, gallium nitride, aluminum nitride, and other types of materials that may be used in photolithography processes.
Alternatively, the ion beam may be an Ar ion beam, an oxygen ion beam, a nitrogen ion beam, or other plasma beam species that can be used to bombard the substrate, breaking molecular chemical bonds on the substrate surface.
Optionally, bombarding the surface of the substrate with an ion beam comprises bombarding the surface of the substrate with an Ar ion beam for a first preset time to form a chemical bond fracture area on the surface to be processed, wherein the chemical bond fracture area comprises a plurality of active sites formed by chemical bond fracture. Wherein argon gas may be charged to an ion source that emits an ion beam, the ion source utilizing the argon gas to generate an Ar ion beam for bombarding a surface of a substrate.
Alternatively, when ion beam bombardment is used, only the region of the substrate for coating the photoresist may be bombarded with an Ar ion beam to reduce the pretreatment time of the substrate.
Optionally, the first preset time and the parameters of the ion beam bombardment are determined according to the type of the substrate and the conditions of chemical bond cleavage of the substrate surface. Wherein different substrates may be provided with different first preset events and different parameters. The first preset time and the parameter setting of the ion beam bombardment ensure that the chemical bond fracture area has enough chemical bond fracture, so that a large number of active sites are formed.
In one embodiment, the material on the top of the substrate is silicon dioxide, the first preset time is 30 seconds, and the parameters of ion beam bombardment include ion beam voltage 500V, ion beam current 300mA, radio frequency power 350W and incidence angle 110 degrees. The Ar ion beam is used to bombard the silicon dioxide on top of the substrate based on this parameter, thereby breaking the chemical bonds of the silicon dioxide and creating a large number of active sites with which to perform subsequent processing.
And S102, attaching an adhesive gas to the surface to be processed to form a hydrophobic surface.
Alternatively, the substrate may be a hydrophilic substrate and the adhesion gas may be HMDS (hexamethyldisilane) and other gases capable of bonding with the substrate to enhance adhesion of the substrate.
In one embodiment, the adherent gas may be a gas molecule having a non-polar methyl group on the gas molecule chain.
Alternatively, attaching an adhesive gas to the surface to be processed includes placing a substrate having the surface to be processed formed in a space formed by the adhesive gas, and treating the substrate at a high temperature for a second preset time to form a hydrophobic surface. In the process of processing the substrate at high temperature, when the adhesive gas is combined with the substrate, a large number of gas molecules are combined with active sites formed on the substrate, so that a hydrophobic surface is formed on the surface of the substrate by adsorption, and enough HDMS can be adsorbed on the substrate by combining the gas molecules with the active sites, so that the adsorption of photoresist on the substrate is improved conveniently.
In one embodiment, the adherent gas may be HMDS and the substrate may be a hydrophilic substrate with polar OH bonds formed on the surface. After bombarding the surface of the substrate with the ion beam to provide the surface of the substrate with a plurality of active sites, the substrate may be placed in a space having HMDS gas therein and subjected to a high temperature heat treatment to enable the HMDS to be adsorbed onto the substrate to form a hydrophobic surface.
Alternatively, the adherent gas is HMDS, the second preset time is 60 seconds, and the temperature at which the substrate is processed is 150 ℃.
In one embodiment, the substrate after ion beam bombardment is placed in the HMDS space and the substrate is processed at a temperature of 150 ℃ such that HMDS not only binds to OH groups attached to the substrate surface, but also to numerous active sites, and a large number of HMDS gas molecules attach to the substrate surface, thereby forming a hydrophobic surface. The hydrophobic surface may create a stronger affinity with non-polar analysis or low polarity resin molecules in the photoresist, thereby improving adhesion of the substrate to the photoresist.
The substrate processing method comprises the steps of bombarding the surface of a substrate by adopting an ion beam to form a surface to be processed, wherein the surface to be processed comprises a chemical bond fracture area, the chemical bond fracture area comprises a plurality of active sites formed by chemical bond fracture, adhesive gas is attached to the surface to be processed to form a hydrophobic surface, the hydrophobic surface is used for adhering photoresist, the adhesive gas comprises nonpolar molecules, and the nonpolar molecules are combined with the active sites to form the hydrophobic surface. The embodiment of the application can effectively improve the adhesiveness of the photoresist, reduce the possibility of photoresist bleaching or sidetracking in subsequent processing, thereby improving the photoetching effect and avoiding the occurrence of semiconductor processing failure.
According to an aspect of the embodiment of the present application, there is provided a substrate, as shown in fig. 2, at least one side of the substrate 1 is provided with a hydrophobic surface 2, and the method for forming the hydrophobic surface 2 includes bombarding the surface of the substrate 1 with an ion beam to form a surface to be processed including a chemical bond breaking region, and attaching an adhesive gas to the surface to be processed to form the hydrophobic surface 2.
Alternatively, the hydrophobic surface 2 is used for adhering a photoresist, and the adhering gas includes nonpolar molecules.
Alternatively, bombarding the surface of the substrate 1 with an ion beam comprises bombarding the surface of the substrate 1 with an Ar ion beam for a first preset time to form a chemical bond fracture area on the surface to be processed, wherein the chemical bond fracture area comprises a plurality of active sites formed by chemical bond fracture.
Alternatively, the first preset time and the parameters of the ion beam bombardment are determined according to the type of the substrate 1, the conditions of chemical bond cleavage of the surface of the substrate 1.
In one embodiment, the first predetermined time is 30 seconds, and the parameters of the ion beam bombardment include ion beam voltage 500V, ion beam current 300mA, radio frequency power 350W, and incident angle 110 degrees.
Alternatively, attaching the adhesive gas to the surface to be processed includes placing the substrate 1 on which the surface to be processed is formed in a space formed by the adhesive gas, and treating the substrate 1 at a high temperature for a second preset time to form the hydrophobic surface 2.
In one embodiment, the adherent gas is HMDS and the second preset time is 60 seconds and the temperature of the process substrate 1 is 150 ℃.
By the method, the substrate 1 can absorb a large amount of adhesive gas, so that the hydrophobic surface 2 capable of effectively absorbing photoresist is formed, the problems of photoresist 'rinsing' and serious sidetrack in wet etching are avoided, and the photoetching effect of the substrate 1 is effectively improved.
According to an aspect of an embodiment of the present application, there is provided a photolithography method, as shown in fig. 3 and 4, including:
S201, forming an imaged photoresist mask based on the hydrophobic surface of the substrate.
Alternatively, the substrate may comprise the substrate according to the above embodiment, wherein the hydrophobic surface may be formed by bombarding the substrate surface with an Ar ion beam, so that chemical bonds on the substrate surface are broken, a large number of active sites appear, the ion beam-pretreated substrate is placed in gas for enhancing adhesion, such as HMDS, and the substrate is subjected to high-temperature treatment, and the adhesion-enhancing gas molecules are combined with not only OH groups attached to the substrate surface but also a large number of active sites, and a large number of gas molecules are attached to the substrate surface, so that a hydrophobic surface with strong hydrophobicity is formed, and the hydrophobic surface generates strong affinity to nonpolar or low-polarity resin molecules of the photoresist, that is, the photoetching adhesion on the wafer substrate is enhanced.
Alternatively, after forming the hydrophobic surface on the substrate, an imaged photoresist mask may be formed on the substrate by a yellow-light-area process such as gumming, pre-bake, exposure, post-bake, development, hard-film, etc. Wherein the photoresist is disposed on the hydrophobic surface.
Alternatively, the photoresist may be applied to the hydrophobic surface of the substrate by spin coating, spray coating, dip coating, and other means.
In one embodiment, the thickness of the coated photoresist may be 3.5 μm. At the time of the pre-bake, the substrate and the photoresist may be baked at 100 degrees celsius for 105 seconds using an oven or hot plate.
Alternatively, the exposure mode may include one of mask alignment exposure, step projection exposure, laser direct writing, e-book direct writing, and other exposure modes. The dose during exposure can be determined according to the selected exposure mode and the type of photoresist.
In one embodiment, the dose at exposure is 414mJ/cm 2, and the photoresist is controlled to form a pattern corresponding to the mask by the exposure mode.
Optionally, after exposure is completed, post-baking is performed on the photoresist on the substrate. Specifically, the parameters at the post-baking may be 107 ℃ and 45s.
Optionally, after the exposure is completed, the photoresist is subjected to a development process. The developing mode can be any one of immersion type, spray type and stirring type. The time of development may be determined according to the manner of development, the temperature, the type of developing solution, and the kind of photoresist.
In one embodiment, the development process is performed for 3 minutes.
Alternatively, in the film hardening operation, the photoresist may be more firmly adhered to the surface of the substrate by heating and baking, and the etching resistance of the photoresist may be increased.
In one embodiment, the temperature is heated to 107 degrees celsius during the curing process, and is treated at this temperature for 60 seconds.
And S202, etching the substrate to obtain a target product.
Alternatively, the region of the substrate not covered by the photoresist mask may be etched by wet etching, so that an image matching the image of the photoresist mask is formed on the substrate, thereby realizing pattern transfer. The etching the substrate comprises the step of etching the substrate for a third preset time by using a solution with a preset concentration, and removing the photoresist mask on the substrate by using acetone.
In one embodiment, the solution used for wet etching may be a mixed solution including HF (hydrofluoric acid), NH4F (ammonium fluoride). In this mixture, 49% hf aqueous solution, 40% nh4f aqueous solution=1:6 < volume ratio >. The etching time was 2 minutes and 20 seconds. After the etching is completed, the photoresist mask on the substrate is removed using acetone.
Alternatively, in removing photoresist using acetone, the substrate may be soaked in NMP (N-methyl-2-pyrrolidone) and then soaked with IPA (isopropyl alcohol), and then the residual liquid is removed by means of water and dried.
Optionally, when the acetone photoresist is used for removing the photoresist thickness, a Critical Dimension (CD) measurement can be performed on the image on the substrate, if the measurement result meets a preset condition (for example, the deviation between the critical dimension and the standard dimension is smaller than a preset deviation threshold, the generated sidetrack value does not exceed a preset value, etc.), the target product is determined to be obtained, if not, the processing error is determined, and the product can be discarded or early warned.
Alternatively, the resulting target product may be used in the production of sensor chips, voltage control chips, MCU, LCD, OLED, and other types of semiconductor devices. The pattern of the photoresist mask on the target product can be determined according to the circuit and the shape of the semiconductor device to be produced.
The photolithographic method of the present application is further illustrated by one embodiment.
In one embodiment, as shown in fig. 4, two substrates a and B, both of which are SiO2 in top material, are prepared, and the shape and size of a and B may be identical. The SiO2 surface of the substrate A was first bombarded with an Ar ion beam for 30 seconds, resulting in cleavage of chemical bonds on the A surface and the appearance of a large number of active sites.
The ion beam pretreated substrate a and the ion beam untreated substrate B were placed in an atmosphere of HMDS and treated at a high temperature of 150 ℃ for 60s, the surfaces of the substrates a and B forming hydrophobic surfaces. The substrates A and B are subjected to photoresist coating, pre-baking, exposure, post-baking, developing, hardening and other yellow light area processes under the same conditions (such as using the same photoresist coating thickness/pre-baking temperature and the same time/exposure dose/post-baking temperature, time and the like), so that the bottom surface photoresist mask is imaged.
After the imaging of the photoresist mask is completed, wet etching treatment is carried out on the substrates A and B under the same condition, wherein the etching time can be 2 minutes and 20 seconds, and then acetone photoresist stripping treatment is used.
The CD of the photoresist masks of the substrates A and B are 9.77 μm before wet etching and 10.237 μm and 17.389 μm after etching and removing the photoresist masks, namely 0.503 μm and 7.619 μm for the substrates A and B respectively. Therefore, the method for spin coating photoresist after pre-treating the substrate by Ar plasma and then carrying out high-temperature treatment of HMDS and other similar adhesion enhancing gases can be determined, the adhesion of the photoresist can be effectively improved, and the side drilling quantity of the substrate A after ion beam treatment is far lower than that of the substrate B.
Based on the same inventive concept, the present application also proposes a semiconductor device, as shown in fig. 5, comprising a target product on which an image is obtained by a photolithography method as described in the above embodiments.
The terms "first," "second," "third," "fourth," "1," "2," and the like in the description and in the claims and in the above figures, if any, are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate, such that the embodiments of the application described herein may be implemented in other sequences than those illustrated or otherwise described.
It should be understood that, although various operation steps are indicated by arrows in the flowcharts of the embodiments of the present application, the order in which these steps are implemented is not limited to the order indicated by the arrows. In some implementations of embodiments of the application, the implementation steps in the flowcharts may be performed in other orders as desired, unless explicitly stated herein. Furthermore, some or all of the steps in the flowcharts may include multiple sub-steps or multiple stages based on the actual implementation scenario. Some or all of these sub-steps or phases may be performed at the same time, or each of these sub-steps or phases may be performed at different times, respectively. In the case of different execution time, the execution sequence of the sub-steps or stages can be flexibly configured according to the requirement, which is not limited by the embodiment of the present application.
The foregoing is merely an optional implementation manner of some of the implementation scenarios of the present application, and it should be noted that, for those skilled in the art, other similar implementation manners based on the technical ideas of the present application are adopted without departing from the technical ideas of the scheme of the present application, and the implementation manner is also within the protection scope of the embodiments of the present application.
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| US5508368A (en) * | 1994-03-03 | 1996-04-16 | Diamonex, Incorporated | Ion beam process for deposition of highly abrasion-resistant coatings |
| CN112185825A (en) * | 2020-09-14 | 2021-01-05 | 华虹半导体(无锡)有限公司 | Method for manufacturing semiconductor silicon chip protective layer |
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| US7416990B2 (en) * | 2005-12-20 | 2008-08-26 | Dongbu Electronics Co., Ltd. | Method for patterning low dielectric layer of semiconductor device |
| CN100483261C (en) * | 2006-08-10 | 2009-04-29 | 中芯国际集成电路制造(上海)有限公司 | Method of forming photoresist pattern |
| CN106025030B (en) * | 2016-08-08 | 2018-10-23 | 泉州市三星消防设备有限公司 | It is a kind of that there is pair preparation method of the patterned substrate of classes' figure layer |
| CN106282934A (en) * | 2016-08-31 | 2017-01-04 | 广东欧珀移动通信有限公司 | Surface treatment method |
| KR102379016B1 (en) * | 2019-10-31 | 2022-03-28 | 세메스 주식회사 | Supporting unit, a substrate processing apparatus including the same and a method using the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US5508368A (en) * | 1994-03-03 | 1996-04-16 | Diamonex, Incorporated | Ion beam process for deposition of highly abrasion-resistant coatings |
| CN112185825A (en) * | 2020-09-14 | 2021-01-05 | 华虹半导体(无锡)有限公司 | Method for manufacturing semiconductor silicon chip protective layer |
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