CN119987164A - Energy calibration method and device for photolithography machine - Google Patents
Energy calibration method and device for photolithography machine Download PDFInfo
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Abstract
本公开实施例提供一种光刻机的能量校准方法及装置。所述方法包括：利用温度传感器测量得到光刻过程中的温度参数；根据预设关系模型，得到所述温度参数对应的能量转换系数；所述预设关系模型为能量转换系数与温度参数的关系模型；基于所述能量转换系数对光刻机进行能量校准。
The embodiment of the present disclosure provides a method and device for energy calibration of a lithography machine. The method comprises: using a temperature sensor to measure and obtain a temperature parameter in a lithography process; obtaining an energy conversion coefficient corresponding to the temperature parameter according to a preset relationship model; the preset relationship model is a relationship model between the energy conversion coefficient and the temperature parameter; and energy calibration of the lithography machine is performed based on the energy conversion coefficient.
Description
Technical Field
The disclosure relates to the technical field of semiconductors, and in particular relates to an energy calibration method and device of a photoetching machine.
Background
Photolithography is one of the most important steps in the semiconductor manufacturing process and determines the level of technology of the overall integrated circuit process. The state of the lithography machine is not unchanged, for example, the state of the machine is dynamically changed due to aging of key components of the lithography machine caused by the operation time of the lithography machine, or the state of the machine is dynamically changed due to the operation or the shutdown maintenance of the lithography machine, which can cause the state of the lithography machine to be dynamically deviated. The exposure energy of the photoetching machine during photoetching can directly influence the size of a CD, the size of the CD can influence the actual pattern size of the subsequent pattern transfer and other processes, the process is unstable, and the product yield is reduced. Therefore, precise control of the exposure energy of the lithography machine by an energy calibration method is required.
Disclosure of Invention
Accordingly, embodiments of the present disclosure provide a method and apparatus for calibrating energy of a lithography machine.
In order to achieve the above purpose, the technical scheme of the present disclosure is realized as follows:
In a first aspect, an embodiment of the disclosure provides an energy calibration method of a lithography machine, the method includes measuring a temperature parameter in a lithography process by using a temperature sensor, obtaining an energy conversion coefficient corresponding to the temperature parameter according to a preset relation model, wherein the preset relation model is a relation model of the energy conversion coefficient and the temperature parameter, and performing energy calibration on the lithography machine based on the energy conversion coefficient.
In some embodiments, measuring the temperature parameter during the lithography process using the temperature sensor includes measuring the first temperature parameter and the second temperature parameter during the lithography process using a first temperature sensor and a second temperature sensor, the first temperature sensor disposed adjacent to a reticle stage in the lithography machine and the second temperature sensor disposed adjacent to a lens in the lithography machine.
In some embodiments, measuring a first temperature parameter during a photolithography process using a first temperature sensor includes measuring a first temperature of a reticle on the reticle stage during the photolithography process using the first temperature sensor, and obtaining a coefficient of thermal expansion of the reticle at the first temperature based on the first temperature and a volume of the reticle, wherein the first temperature and the coefficient of thermal expansion of the reticle at the first temperature comprise the first temperature parameter.
In some embodiments, measuring a second temperature parameter during the lithographic process with a second temperature sensor includes measuring a second temperature of the lens during the lithographic process with the second temperature sensor and obtaining a coefficient of thermal expansion of the lens at the second temperature based on the second temperature and a volume of the lens, the second temperature and the coefficient of thermal expansion of the lens at the second temperature comprising the second temperature parameter.
In some embodiments, obtaining the energy conversion coefficient corresponding to the temperature parameter according to a preset relation model of the energy conversion coefficient and the temperature parameter comprises obtaining a first energy conversion coefficient corresponding to the first temperature parameter and a second energy conversion coefficient corresponding to the second temperature parameter according to the relation model.
In some embodiments, before the temperature sensor is used for measuring and obtaining the temperature parameters in the photoetching process, the method further comprises the steps of obtaining sample temperature parameters of a photomask and/or a lens in the photoetching machine at different temperatures, and constructing a preset relation model based on the sample temperature parameters.
In some embodiments, the preset relationship model is: wherein, the method comprises the steps of, For coefficients related to the material of the mask or to the material of the lens,As a function of the temperature parameter(s),For the volume of the mask or the lens at normal temperature,For the surface area of the mask or the lens at normal temperature,Is an energy conversion coefficient.
In a second aspect, an embodiment of the disclosure provides an energy calibration device of a lithography machine, which includes a temperature sensor configured to measure a temperature parameter in a lithography process, a calculation module configured to obtain an energy conversion coefficient corresponding to the temperature parameter according to a preset relationship model, where the preset relationship model is a relationship model of the energy conversion coefficient and the temperature parameter, and a calibration module configured to calibrate energy of the lithography machine based on the energy conversion coefficient.
In some embodiments, the temperature sensor comprises a first temperature sensor and a second temperature sensor, wherein the first temperature sensor is arranged adjacent to a photomask bearing table in the photoetching machine, the second temperature sensor is arranged adjacent to a lens in the photoetching machine, the first temperature sensor is used for measuring a first temperature parameter in the photoetching process, and the second temperature sensor is used for measuring a second temperature parameter in the photoetching process.
In some embodiments, the first temperature sensor is specifically configured to measure a first temperature of a photomask on the photomask carrier during a photolithography process, and obtain a thermal expansion coefficient of the photomask at the first temperature according to the first temperature and a volume of the photomask, where the first temperature and the thermal expansion coefficient of the photomask at the first temperature form the first temperature parameter.
In some embodiments, the second temperature sensor is specifically configured to measure a second temperature of the lens during the photolithography process, and obtain a thermal expansion coefficient of the lens at the second temperature according to the second temperature and a volume of the lens, where the second temperature and the thermal expansion coefficient of the lens at the second temperature form the second temperature parameter.
In some embodiments, the calculation module is further configured to obtain a first energy conversion coefficient corresponding to the first temperature parameter and a second energy conversion coefficient corresponding to the second temperature parameter according to the preset relation model.
The embodiment of the disclosure provides an energy calibration method and device for a photoetching machine. The method comprises the steps of measuring temperature parameters in a photoetching process by using a temperature sensor, obtaining energy conversion coefficients corresponding to the temperature parameters according to a preset relation model, wherein the preset relation model is a relation model of the energy conversion coefficients and the temperature parameters, and carrying out energy calibration on a photoetching machine based on the energy conversion coefficients. In disclosed embodiments, energy variations in the lithographic process are characterized based on temperature parameters, whereby the lithographic machine may be energy calibrated based on the temperature parameters.
Drawings
FIG. 1 is a schematic diagram of steps of a method for calibrating energy of a lithographic apparatus according to an embodiment of the disclosure;
FIG. 2 is a schematic diagram of a lithographic apparatus according to an embodiment of the disclosure;
FIG. 3 is a schematic diagram of an energy calibration apparatus of a lithographic apparatus according to an embodiment of the disclosure;
Fig. 4 is a hardware configuration diagram of an energy calibration device of a lithography machine according to an embodiment of the disclosure.
Detailed Description
The following description of the embodiments of the present disclosure will be made clearly and fully with reference to the embodiments of the present disclosure and the accompanying drawings, it being apparent that the described embodiments are only some, but not all, of the embodiments of the present disclosure. All other embodiments, which can be made by one of ordinary skill in the art without inventive effort, based on the embodiments in this disclosure are intended to be within the scope of this disclosure.
In the following description, numerous specific details are set forth in order to provide a more thorough understanding of the present disclosure. However, it will be apparent to one skilled in the art that the present disclosure may be practiced without one or more of these details. In other instances, well-known functions and constructions are not described in detail to avoid obscuring the present disclosure, i.e., not all features of an actual embodiment are described herein.
In the drawings, the size of layers, regions, elements and their relative sizes may be exaggerated for clarity. Like numbers refer to like elements throughout.
It will be understood that when an element or layer is referred to as being "on," "adjacent," "connected to," or "coupled to" another element or layer, it can be directly on, adjacent, connected, or coupled to the other element or layer, or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" another element or layer, there are no intervening elements or layers present. It will be understood that, although the terms first, second, third, etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present disclosure. When a second element, component, region, layer or section is discussed, it does not necessarily mean that the first element, component, region, layer or section is present in the present disclosure.
Spatial relationship terms such as "under", "above", "over" and the like may be used herein for convenience of description to describe one element or feature as illustrated in the figures in relation to another element or feature. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use and operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements or features described as "under" or "beneath" other elements would then be oriented "on" the other elements or features. Thus, the exemplary terms "under" and "under" may include both an upper and a lower orientation. The device may be otherwise oriented (rotated 90 degrees or other orientations) and the spatially relative descriptors used herein interpreted accordingly.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of the associated listed items.
For a thorough understanding of the present disclosure, detailed steps and detailed structures will be presented in the following description in order to illustrate the technical aspects of the present disclosure. Preferred embodiments of the present disclosure are described in detail below, however, the present disclosure may have other implementations in addition to these detailed descriptions.
In the product manufacturing process, the stability of process quality is an important evaluation index for equipment and process, and determines whether some equipment or process can enter mass production and manufacture. For example, in the photolithography process, whether the exposure energy stably affects the photolithography effect of different positions of the same wafer and the photolithography effect of different wafers have high requirements on the process stability of the photolithography machine, so that the different positions of the same wafer can be ensured to have controllable sizes, and different wafers obtained by using the same photolithography parameters can be ensured to have consistent sizes.
During wafer exposure, the lithography machine provides the required exposure energy (output energy) which can be feedback controlled by an energy sensor on the lithography machine, and a spot sensor above a wafer carrier (chuck) carrying the wafer is used to detect the exposure energy (input energy) received by the wafer and feedback, so that the energy conversion coefficient ESCF (Energy Sensor Conversion Factor) of the input energy and the output energy can be obtained. Meanwhile, for a photoetching machine of a twins chuck (double-carrier disc), each carrier disc is also provided with an energy calibration sensor (Energy Sensor Calibration, ESCAL) which is used for carrying out output energy data transmission with a point sensor on the first carrier disc in the double-carrier disc so as to ensure that the energy of each carrier disc is consistent.
As the size of the core device is continuously reduced, the size of the core structure is increased to tens of nanometers or several nanometers, and the stability requirement on the manufacturing process is higher. Based on the above, energy calibration of the lithography machine in the working process is a problem to be solved urgently.
In this regard, the following embodiments are proposed.
Fig. 1 is a schematic step diagram of an energy calibration method of a lithography machine according to an embodiment of the disclosure. As shown in fig. 1, the energy calibration method includes the steps of:
and step S101, measuring and obtaining temperature parameters in the photoetching process by using a temperature sensor.
Step S102, obtaining an energy conversion coefficient corresponding to the temperature parameter according to a preset relation model, wherein the preset relation model is a relation model of the energy conversion coefficient and the temperature parameter.
And step 103, performing energy calibration on the lithography machine based on the energy conversion coefficient.
In disclosed embodiments, energy variations in the lithographic process are characterized based on temperature parameters, whereby the lithographic machine may be energy calibrated based on the temperature parameters.
The photoetching machine mainly comprises an illumination optical module, a photomask module and a wafer module. The optical module includes a light source module (source), an illumination module (illumination module), and a projection objective module (projection lens). The light source module can be simplified as a laser, which emits deep ultraviolet light (Deep Ultra Violet, DUV) or extreme ultraviolet light (Extreme Ultra Violet, EUV). The mask module includes a mask transfer module (RETICLE HANDLER) and a mask stage (RETICLE STAGE). The mask transfer module is responsible for transferring the mask from the mask box to the mask stage. The mask carrier is responsible for carrying and rapidly moving the mask back and forth. The wafer module includes a wafer transfer module (WAFER HANDLER) and a wafer carrier (WAFER STAGE). The wafer transfer module is responsible for transferring the wafer from the photoresist coater to the wafer carrier, which is responsible for carrying the wafer and precisely positioning the wafer for exposure. The projection objective module comprises a plurality of lenses and is used for projecting the image of the photomask in the photomask module on the surface of the wafer in the wafer module.
In some embodiments, the temperature sensor includes a first temperature sensor and a second temperature sensor, wherein the first temperature sensor may be disposed adjacent to a reticle stage in the lithography machine and the second temperature sensor may be disposed adjacent to a lens in the lithography machine. The adjacent arrangement here may be a close proximity arrangement.
Fig. 2 is a schematic structural diagram of a lithographic apparatus according to an embodiment of the disclosure. It should be noted that fig. 2 is a simplified schematic structural diagram of the lithographic apparatus, and fig. 2 only illustrates the reticle stage 210, the projection objective 220, and the wafer stage 230 in the lithographic apparatus. As shown in fig. 2, the first temperature sensor is disposed at a position N1 below the reticle stage 210, and may be a telescopic temperature sensor, where the first temperature sensor is disposed in the first accommodating portion and is movable relative to the first accommodating portion, and has a first position and a second position relative to the first accommodating portion, where at least a portion of the body of the first temperature sensor extends into the position below the reticle stage in the first position state to measure the temperature of the reticle on the reticle stage, and the first temperature sensor is accommodated in the first accommodating portion in the second position state. Similarly, the second temperature sensor is disposed at a position N2 below a lowermost lens in the projection objective module 220, and the second temperature sensor may be a telescopic temperature sensor, where the second temperature sensor has a first position and a second position relative to the second accommodating portion, and in the first position state, at least part of the body of the second temperature sensor extends into the position below the lowermost lens in the projection objective module to perform temperature measurement on the lowermost lens in the projection objective module, and in the second position state, the second temperature sensor is accommodated in the second accommodating portion.
It should be noted that N1 and N2 illustrated in fig. 2 are only exemplary, and the first temperature sensor may be further disposed at a position adjacent to the reticle stage 210 and capable of measuring a temperature parameter of the reticle, and the second temperature sensor and the projection objective 220 may be further disposed at a position adjacent to the projection objective 220 and capable of measuring a temperature parameter of a lowermost lens in the projection objective 220, and N1 and N2 illustrated in fig. 2 are not intended to limit the positions of the first temperature sensor and the second temperature sensor in the present disclosure.
In some embodiments, step S101 includes measuring a first temperature parameter and a second temperature parameter during a lithographic process using a first temperature sensor and a second temperature sensor.
In some embodiments, a first temperature sensor measures a first temperature parameter during performing reticle stage alignment (RETICLE STAGE ALIGN). In performing the photolithography process, each lot requires a reticle stage alignment step to be performed before exposure. Namely, the diagonal center of the actual pattern area to be exposed on the photomask bearing table is overlapped with the center of the lens of the photoetching machine through the X-axis moving device and/or the Y-axis moving device.
In some embodiments, the second temperature sensor measures a second temperature parameter during a wafer set correction (lot correction). During the photolithography process, each lot is subjected to wafer set correction prior to exposure.
In some embodiments, step S101 includes measuring a first temperature T 1 of a mask on the mask stage during a photolithography process by using a first temperature sensor, and obtaining a thermal expansion coefficient beta 1 of the mask at the first temperature T 1 according to the first temperature T 1 and a volume V 1 of the mask, wherein the first temperature T 1 and the thermal expansion coefficient beta 1 of the mask at the first temperature T 1 form the first temperature parameter. Here, the volume V 1 of the mask is the volume of the mask at the first temperature T 1.
In some embodiments, the volume V M of the mask may be measured at ambient temperature T 0. Since the volume change of the mask at different temperatures satisfies the formula Δv=v M ×β×Δt. Therefore, the thermal expansion coefficient of the mask can be obtained by the following formula. In other embodiments, the volume of the mask may also be calculated by measuring the area and thickness of the mask.
In some embodiments, step S101 includes measuring a second temperature T 2 of the lens during photolithography using a second temperature sensor, and obtaining a thermal expansion coefficient beta 2 of the lens at the second temperature T2 according to the second temperature T 2 and a volume V 2 of the lens, wherein the second temperature T 2 and the thermal expansion coefficient beta 2 of the lens at the second temperature T 2 form the second temperature parameter. Here, the volume V 2 of the lens is the volume of the lens at the second temperature T 2.
In some embodiments, the volume V L of the lens may be measured at ambient temperature T 0. Since the volume change of the lens at different temperatures satisfies the formula Δv=v L ×β×Δt. Therefore, the coefficient of thermal expansion of the lens can be obtained by the following formula. In other embodiments, the volume of the lens may also be calculated by measuring the area and thickness of the lens.
In some embodiments, when the lithography machine performs a continuous process (including a continuous process for replacing a photomask), a discontinuous process, a high energy layer process, or a low energy layer process, the first temperature sensor and the second temperature sensor each measure a first temperature parameter and a second temperature parameter before each lot of lot exposure.
In some embodiments, step S102 includes obtaining a first energy conversion coefficient ESCF 1 corresponding to the first temperature parameter and a second energy conversion coefficient ESCF 2 corresponding to the second temperature parameter according to the relational model.
In some embodiments, the preset relationship model is: wherein, the method comprises the steps of, For coefficients related to the material of the mask or to the material of the lens,As a function of the temperature parameter(s),Is the volume of the photomask or the lens at normal temperature,Is the surface area of the photomask or lens at normal temperature,Is an energy conversion coefficient.
In some embodiments, μ is a coefficient within the function of the distance of light energy transmitted through the object and the reflectivity, and typically the value of μ ranges from 0.30 to 1.70, where μ is determined by the material of the mask or lens, and its corresponding μ value can be obtained by querying the mask or lens material properties.
Here the number of the elements is the number,AndAll are parameters that can be measured with respect to the mask or lens. ESCF 0 at normal temperature T 0 can be calculated based on a preset relational model, and ESCF 1 at first temperature T 1 can be obtained based on bringing first temperature T 1 and thermal expansion coefficient beta 1 into the preset relational model in the photoetching process of each lot of lot, specifically,Wherein mu 1 is a coefficient related to a material of the photomask, V M is a volume of the photomask at normal temperature T 0,For the variation of temperatures T 0 to T 1, S 1 is the surface area of the mask at normal temperature T 0, and ESCF 2 at a second temperature T 2 can be obtained based on bringing the second temperature T 2 and the thermal expansion coefficient beta 2 into a predetermined relational model, specifically,Wherein mu 2 is a coefficient related to a material of the lens, V L is a volume of the lens at normal temperature T 0,S 2 is the surface area of the lens at room temperature T 0, which is the amount of change in temperatures T 0 to T 2.
In the embodiment of the disclosure, the ESCF 0 at the normal temperature T 0 is measured and calculated, when the photoetching machine calibrates the ESCF, the ESCF 0 is used as a reference energy conversion coefficient with T 0 as a reference temperature, so as to ensure that the change of the energy conversion coefficient ESCF before and after each calibration is minimum, thereby improving the energy baseline jump (energy baseline jump) caused by the update of the energy conversion coefficient ESCF, and affecting the critical dimension (Critical Dimension, CD) of photoetching and the feedback system of R2R (Run to Run, production after control by the information obtained by the previous operation).
In some embodiments, the energy calibration method further comprises, before step S101, obtaining sample temperature parameters of the photomask and/or the lens in the lithography machine at different temperatures, and constructing a preset relationship model based on the sample temperature parameters.
In some embodiments, a first sample temperature parameter of the photomask at different temperatures is obtained by a first temperature sensor, a second sample temperature parameter of the lens at different temperatures is obtained by a second temperature sensor, and a preset relationship model is constructed based on the first sample temperature parameter and the second sample temperature parameter.
In some embodiments, the first sample temperature parameter includes, but is not limited to, the volume, coefficient of thermal expansion, surface area of the reticle at different temperatures. The second sample temperature parameters include, but are not limited to, volume, coefficient of thermal expansion, surface area of the lens at different temperatures.
In one specific example, a predetermined relationship model is established with the energy conversion coefficient ESCF as a dependent variable and the temperature parameter as an independent variable based on the first sample temperature parameter, the second sample temperature parameter, and the measurement data and fault detection system (Fault Detection Control, FDC) parameters, including the energy conversion coefficient ESCF.
In an embodiment of the present disclosure, a method for processing a web,Wherein, the method comprises the steps of,In order to calibrate the energy conversion coefficient,For the energy conversion coefficient of the previous lot,The energy conversion coefficient of the lot is the energy conversion coefficient of the lot. And calculating the calibration energy conversion coefficient according to the energy conversion coefficient of the previous batch lot and the energy conversion coefficient of the current batch lot. And (5) performing energy calibration on the lithography machine based on the calibration energy conversion coefficient.
In some embodiments, for dual-disk lithographers, the energy conversion factor ECCF (Energy Sensor Calibration Conversion Factor) of the parameters of the point sensor output and the parameters of the energy calibration sensor output is also involved.
In the embodiment of the disclosure, ECCF 0 at normal temperature T 0 is measured and calculated, when the photoetching machine calibrates ECCF, T 0 is used as a reference temperature, ECCF 0 is used as a reference energy conversion coefficient, so as to ensure that the change of the energy conversion coefficient ECCF before and after each calibration is minimum, thereby improving energy baseline jump (energy baseline jump) caused by updating of the energy conversion coefficient ECCF, and affecting the critical dimension CD and R2R feedback system of photoetching.
In a specific example, based on the first sample temperature parameter, the second sample temperature parameter, and the measurement data and fault detection system (Fault Detection Control, FDC) parameters, the FDC parameters include an energy conversion coefficient ECCF, a predetermined relationship model is established with the energy conversion coefficient ECCF as a dependent variable and the temperature parameter as an independent variable.
In an embodiment of the present disclosure, a method for processing a web,Wherein, the method comprises the steps of,In order to calibrate the energy conversion coefficient,For the energy conversion coefficient of the previous lot,The energy conversion coefficient of the lot is the energy conversion coefficient of the lot. And calculating the calibration energy conversion coefficient according to the energy conversion coefficient of the previous batch lot and the energy conversion coefficient of the current batch lot. And (5) performing energy calibration on the lithography machine based on the calibration energy conversion coefficient.
In the embodiment of the disclosure, more factors (such as temperature parameters) influencing the energy attenuation of the photoetching machine are introduced, and a preset relation model is established to calibrate the energy of the photoetching machine. In this way, non-real energy variations can be filtered, thereby enabling more accurate energy calibration.
In the embodiment of the disclosure, as more temperature parameters influencing the energy attenuation of the lithography machine are introduced, the change of the energy conversion coefficient is more gentle, the reference (baseline) mutation is reduced, and the ECCF calibration period is prolonged.
In some embodiments, the energy calibration method further comprises measuring energy parameters in the lithography process by using an energy sensor, wherein the energy sensor is arranged in the illumination module and is used for measuring the energy of the output light of the light source in the lithography machine.
In some embodiments, energy calibrating the lithography machine based on the energy conversion coefficient includes energy calibrating the lithography machine based on the energy conversion coefficient and the energy parameter.
In some embodiments, the energy conversion coefficient ESCF 3 of the input energy and the output energy can be obtained according to the energy parameter and the exposure energy detected by the point sensor, and the calibration energy conversion coefficient can be calculated according to the energy conversion coefficient ESCF 3 and the energy conversion coefficient of the current lot. And (5) performing energy calibration on the lithography machine based on the calibration energy conversion coefficient.
In the embodiment of the disclosure, the energy conversion coefficient obtained based on the temperature parameter and the preset relation model is used as a new FDC parameter to be detected and controlled, and the control of the two-side FDC limit is changed into the control of the one-side FDC limit, so that the accurate Target value (Target) and the specification limit (SPEC LIMIT) are more favorably set. Corresponding FDC alarms (alarm) and error limits (error limit) are set according to critical dimension specification limits (CD SPEC) of a process layer (layer), so that the critical dimension CD of a product can be effectively prevented from exceeding a control limit (Out of control, OOC) and exceeding a specification limit (Out of specification, OOS), abnormal behavior countermeasures (Out of Control Action Plan, OCAP) are set more pertinently, and the stability of the critical dimension CD of an online (Inline) lots is improved.
In the embodiment of the disclosure, the energy conversion coefficient obtained based on the temperature parameter and the preset relation model is used as a new FDC parameter for detection and control, so that FDC card control abnormality and treatment are more accurate, abnormal points can be detected, and whether real mutation or non-real mutation is timely confirmed.
By the energy calibration method of the photoetching machine, which is provided by the embodiment of the disclosure, the energy stability of the photoetching machine can be effectively improved, the energy mutation of unreal mutation is reduced, the stability of the critical dimension CD of a product is improved, and the processing capability is improved.
It should be noted that although the various steps of the energy calibration method of the lithography machine of the present disclosure are depicted in a particular order in the figures, this does not require or imply that the steps must be performed in that particular order or that all of the illustrated steps must be performed in order to achieve desirable results. Additionally or alternatively, certain steps may be omitted, multiple steps combined into one step to perform, and/or one step decomposed into multiple steps to perform, etc.
An exemplary embodiment of the present disclosure further provides an energy calibration device of a lithography machine, and fig. 3 is a schematic structural diagram of the energy calibration device of the lithography machine provided in the embodiment of the present disclosure. As shown in fig. 3, the energy calibration device 300 of the lithography machine includes a temperature sensor 310 for measuring a temperature parameter in a lithography process, a calculation module 320 for obtaining an energy conversion coefficient corresponding to the temperature parameter according to a preset relationship model, where the preset relationship model is a relationship model of the energy conversion coefficient and the temperature parameter, and a calibration module 330 for performing energy calibration on the lithography machine based on the energy conversion coefficient.
In some embodiments, temperature sensor 310 includes a first temperature sensor disposed adjacent to a reticle stage in the lithography machine and a second temperature sensor disposed adjacent to a lens in the lithography machine, the first temperature sensor being configured to measure a first temperature parameter during a lithography process, and the second temperature sensor being configured to measure a second temperature parameter during the lithography process.
In some embodiments, the first temperature sensor is specifically configured to measure a first temperature of a photomask on the photomask carrier during a photolithography process, and obtain a thermal expansion coefficient of the photomask at the first temperature according to the first temperature and a volume of the photomask, where the first temperature and the thermal expansion coefficient of the photomask at the first temperature form the first temperature parameter.
In some embodiments, the second temperature sensor is specifically configured to measure a second temperature of the lens during the photolithography process, and obtain a thermal expansion coefficient of the lens at the second temperature according to the second temperature and a volume of the lens, where the second temperature and the thermal expansion coefficient of the lens at the second temperature form the second temperature parameter.
In some embodiments, the calculating module 320 is further configured to obtain a first energy conversion coefficient corresponding to the first temperature parameter and a second energy conversion coefficient corresponding to the second temperature parameter according to the preset relationship model.
In some embodiments, the apparatus 300 further comprises a construction module 340 for obtaining sample temperature parameters of the reticle and/or lens in the lithography machine at different temperatures, and constructing a preset relationship model based on the sample temperature parameters.
In some embodiments, the apparatus 300 further comprises an energy sensor 350 for measuring an energy parameter during the lithographic process, the energy parameter being used to characterize the energy of the output light of the light source in the lithographic machine.
In some embodiments, the calibration module 330 is specifically configured to perform energy calibration on the lithography machine based on the energy conversion coefficient and the energy parameter.
For details not disclosed in the embodiments of the present disclosure, reference should be made to the description of the foregoing embodiments.
It will be appreciated that in this embodiment, a "module" may be part of a circuit, part of a processor, part of a program or software, etc., but may also be non-modular. Furthermore, the components in the present embodiment may be integrated in one processing unit, or each unit may exist alone physically, or two or more units may be integrated in one unit. The integrated units may be implemented in hardware or in software functional modules.
The integrated units, if implemented in the form of software functional modules, may be stored in a computer-readable storage medium, if not sold or used as separate products, and based on such understanding, the technical solution of the present embodiment may be embodied essentially or partly in the form of a software product, which is stored in a storage medium and includes several instructions to cause a computer device (which may be a personal computer, a server, or a network device, etc.) or processor to perform all or part of the steps of the method described in the present embodiment. The storage medium includes various media capable of storing program codes, such as a U disk, a removable hard disk, a Read Only Memory (ROM), a random access Memory (Random Access Memory, RAM), a magnetic disk, or an optical disk.
Accordingly, the presently disclosed embodiments also provide a computer storage medium storing a computer program which, when executed by at least one processor, implements the steps of the model calibration method of any of the preceding embodiments.
Based on the above-mentioned composition of the energy calibration device of the lithography machine and the computer storage medium, referring to fig. 4, a schematic diagram of the composition structure of an electronic device according to an embodiment of the disclosure is shown. As shown in FIG. 4, electronic device 400 may include a communication interface 401, memory 402, and processor 403, the various components being coupled together by a bus system 404. It is appreciated that the bus system 404 serves to facilitate connected communications between these components. The bus system 404 includes a power bus, a control bus, and a status signal bus in addition to the data bus. But for clarity of illustration the various buses are labeled as bus system 404 in fig. 4. The communication interface 401 is configured to receive and send signals in a process of receiving and sending information with other external network elements;
a memory 402 for storing a computer program capable of running on the processor 403;
processor 403, configured to, when executing the computer program, perform:
Measuring a temperature parameter in the photoetching process by using a temperature sensor;
Obtaining an energy conversion coefficient corresponding to the temperature parameter according to a preset relation model, wherein the preset relation model is a relation model of the energy conversion coefficient and the temperature parameter;
and performing energy calibration on the photoetching machine based on the energy conversion coefficient.
It is to be appreciated that the memory 402 in embodiments of the present disclosure may be either volatile memory or nonvolatile memory, or may include both volatile and nonvolatile memory. The nonvolatile Memory may be a Read-Only Memory (ROM), a Programmable ROM (PROM), an Erasable PROM (EPROM), an Electrically Erasable EPROM (EEPROM), or a flash Memory. The volatile memory may be random access memory (Random Access Memory, RAM) which acts as external cache memory. By way of example, and not limitation, many forms of RAM are available, such as static random access memory (STATIC RAM, SRAM), dynamic random access memory (DYNAMIC RAM, DRAM), synchronous dynamic random access memory (Synchronous DRAM, SDRAM), double data rate Synchronous dynamic random access memory (Double DATA RATE SDRAM, DDRSDRAM), enhanced Synchronous dynamic random access memory (ENHANCED SDRAM, ESDRAM), synchronous Link DRAM (SLDRAM), and Direct memory bus RAM (DRRAM). The memory 402 of the systems and methods described herein is intended to comprise, without being limited to, these and any other suitable types of memory.
While processor 403 may be an integrated circuit chip with signal processing capabilities. In implementation, the steps of the above method may be performed by integrated logic circuits of hardware in the processor 403 or by instructions in the form of software. The Processor 403 may be a general purpose Processor, digital signal Processor (DIGITAL SIGNAL Processor, DSP), application SPECIFIC INTEGRATED Circuit (ASIC), field programmable gate array (Field Programmable GATE ARRAY, FPGA) or other programmable logic device, discrete gate or transistor logic device, discrete hardware components. The various methods, steps and logic blocks of the disclosure in the embodiments of the disclosure may be implemented or performed. A general purpose processor may be a microprocessor or the processor may be any conventional processor or the like. The steps of a method disclosed in connection with the embodiments of the present disclosure may be embodied directly in hardware, in a decoded processor, or in a combination of hardware and software modules in a decoded processor. The software modules may be located in a random access memory, flash memory, read only memory, programmable read only memory, or electrically erasable programmable memory, registers, etc. as well known in the art. The storage medium is located in the memory 402, and the processor 403 reads the information in the memory 402 and performs the steps of the method in combination with its hardware.
It is to be understood that the embodiments described herein may be implemented in hardware, software, firmware, middleware, microcode, or a combination thereof. For a hardware implementation, the Processing units may be implemented within one or more Application SPECIFIC INTEGRATED Circuits (ASICs), digital signal processors (DIGITAL SIGNAL Processing, DSPs), digital signal Processing devices (DSP DEVICE, DSPD), programmable logic devices (Programmable Logic Device, PLDs), field-Programmable gate arrays (Field-Programmable GATE ARRAY, FPGA), general purpose processors, controllers, micro-controllers, microprocessors, other electronic units for performing the functions described herein, or a combination thereof.
For a software implementation, the techniques described herein may be implemented with modules (e.g., procedures, functions, and so on) that perform the functions described herein. The software codes may be stored in a memory and executed by a processor. The memory may be implemented within the processor or external to the processor.
Optionally, as another embodiment, the processor 403 is further configured to perform the energy calibration method of the lithographic machine according to any of the previous embodiments when running the computer program.
It should be appreciated that reference throughout this specification to "one embodiment" or "an embodiment" means that a particular feature, structure or characteristic described in connection with the embodiment is included in at least one embodiment of the present disclosure. Thus, the appearances of the phrases "in one embodiment" or "in an embodiment" in various places throughout this specification are not necessarily all referring to the same embodiment. Furthermore, the particular features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. It should be understood that, in various embodiments of the present disclosure, the sequence numbers of the foregoing processes do not mean the order of execution, and the order of execution of the processes should be determined by their functions and internal logic, and should not constitute any limitation on the implementation of the embodiments of the present disclosure. The foregoing embodiment numbers of the present disclosure are merely for description and do not represent advantages or disadvantages of the embodiments.
The foregoing description is only of the preferred embodiments of the present disclosure, and is not intended to limit the scope of the present disclosure, but rather, the equivalent structural changes made by the present disclosure and the accompanying drawings under the inventive concept of the present disclosure, or the direct/indirect application in other related technical fields are included in the scope of the present disclosure.
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