CN113707355A - Energy-carrying and energy-converting integrated nuclear battery - Google Patents
Energy-carrying and energy-converting integrated nuclear battery Download PDFInfo
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- CN113707355A CN113707355A CN202110986633.4A CN202110986633A CN113707355A CN 113707355 A CN113707355 A CN 113707355A CN 202110986633 A CN202110986633 A CN 202110986633A CN 113707355 A CN113707355 A CN 113707355A
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- 239000004065 semiconductor Substances 0.000 claims abstract description 42
- 230000002285 radioactive effect Effects 0.000 claims abstract description 41
- 239000000463 material Substances 0.000 claims abstract description 18
- 239000002184 metal Substances 0.000 claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000006243 chemical reaction Methods 0.000 claims abstract description 14
- 229910003460 diamond Inorganic materials 0.000 claims description 21
- 239000010432 diamond Substances 0.000 claims description 21
- 239000013078 crystal Substances 0.000 claims description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- 230000026683 transduction Effects 0.000 claims description 7
- 238000010361 transduction Methods 0.000 claims description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 14
- 230000005855 radiation Effects 0.000 abstract description 11
- 239000002245 particle Substances 0.000 abstract description 10
- 238000010521 absorption reaction Methods 0.000 abstract description 7
- 230000009471 action Effects 0.000 abstract description 3
- 230000005684 electric field Effects 0.000 abstract description 3
- 230000026058 directional locomotion Effects 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 241000282414 Homo sapiens Species 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000000747 cardiac effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000259 microwave plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000005658 nuclear physics Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 230000005258 radioactive decay Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
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- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21H—OBTAINING ENERGY FROM RADIOACTIVE SOURCES; APPLICATIONS OF RADIATION FROM RADIOACTIVE SOURCES, NOT OTHERWISE PROVIDED FOR; UTILISING COSMIC RADIATION
- G21H1/00—Arrangements for obtaining electrical energy from radioactive sources, e.g. from radioactive isotopes, nuclear or atomic batteries
- G21H1/06—Cells wherein radiation is applied to the junction of different semiconductor materials
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
本发明公开了属于核能利用技术领域的载能与换能一体化式核电池。该核电池的原理是，将辐射伏特效应核电池中的半导体换能材料中的一种或几种稳定同位素替换为放射性同位素，放射性同位素发射的α或β粒子直接沉积在半导体换能材料中，产生大量电子空穴对，由高掺杂的半导体衬底、低掺杂的具有放射性的半导体层和电池肖特基金属层构成肖特基结构，并形成内建电场，电子空穴对在内建电场的作用下发生定向移动，外接负载并形成闭合回路后产生电流。与放射源与换能器件分立结构的核电池相比，本发明能够使放射源与半导体换能材料充分接触，减轻放射源自吸收效应的影响，提高放射源的能量利用率，增加核电池的输出功率。
The invention discloses an energy-carrying and energy-converting integrated nuclear battery belonging to the technical field of nuclear energy utilization. The principle of the nuclear battery is that one or several stable isotopes in the semiconductor energy conversion material in the radiation volt effect nuclear battery are replaced by radioisotopes, and the α or β particles emitted by the radioisotope are directly deposited in the semiconductor energy conversion material, A large number of electron-hole pairs are generated, and a Schottky structure is formed by a highly doped semiconductor substrate, a low-doped radioactive semiconductor layer and a battery Schottky metal layer, and a built-in electric field is formed, and the electron hole pairs are included Under the action of the electric field, the directional movement occurs, and the external load forms a closed loop to generate a current. Compared with the nuclear battery with the discrete structure of the radioactive source and the transducer device, the present invention can make the radioactive source and the semiconductor energy conversion material fully contact, reduce the influence of the radiation source absorption effect, improve the energy utilization rate of the radioactive source, and increase the efficiency of the nuclear battery. Output Power.
Description
Technical Field
The invention belongs to the fields of nuclear physics, nuclear energy application and micro energy, and particularly relates to an energy-carrying and energy-converting integrated nuclear battery.
Background
The nuclear battery is a device for converting decay energy of the radioactive isotope into electric energy, is not influenced by external environment in the power supply process, has stable and reliable working condition, does not need manual intervention and maintenance, and can be applied to severe environments and occasions where human beings are difficult to reach for a long time, such as deep sea, deep space, polar regions, remote areas and cardiac pacemakers; among them, the radiant volt effect nuclear battery is a semiconductor device, so it is easy to integrate with integrated circuit, especially suitable for being used as energy source of micro-electro-mechanical system.
However, the current radiation volt-effect nuclear battery has the problem of low energy utilization rate, because the radioactive source has a certain thickness, the alpha or beta particles released by the radioactive source have poor penetrability, and a part of the alpha or beta particles interact with the radioactive source material and are deposited in the radioactive source, namely, the self-absorption effect is generated, so that a large amount of radioactive decay energy is deposited in the radioactive source instead of generating electron-hole pairs in a transducer, and the problem restricts the improvement of the electrical performance of the radiation volt-effect nuclear battery; in addition, under the action of rays, radiation damage is generated inside a semiconductor material used by the radiation volt-effect nuclear battery, and the service life of the battery is shortened.
The traditional radiation volt effect nuclear battery uses a structure that a transduction material and a radioactive source are separated, and for a pn junction type nuclear battery, the radioactive source, a positive electrode, a semiconductor transduction device and a back electrode are respectively arranged from top to bottom. Due to the self-absorption effect of the radioactive source, only a part of alpha or beta particles generated by decay of the radioactive source can be emitted, only a part of decay energy of the radioactive source can be utilized, a large amount of energy is deposited in the radioactive source, and negative effects such as temperature rise and the like are generated; on the other hand, electrodes of nuclear batteries are generally metallic materials, having a barrier effect against α or β particles. In the case of using a mesh electrode, if the mesh is too large, the total resistance of the device is relatively large, resulting in a reduction in the operating voltage of the nuclear battery; if the mesh is too small, the active particles can be obviously blocked, so that more energy is deposited in the electrode instead of the semiconductor material, and the utilization rate of the energy is reduced; the traditional Schottky type radiation volt effect nuclear battery is respectively provided with a radioactive source, a Schottky metal layer, a semiconductor energy conversion device and an ohmic electrode from top to bottom, and only a part of alpha or beta particles emitted by the radioactive source can be emitted due to the self-absorption effect; due to the blocking effect of the schottky metal layer, most of the emitted alpha or beta particles are deposited in the schottky metal layer and cannot be utilized. The combined action of the two aspects ensures that the beta radiation volt effect nuclear battery with the traditional discrete structure has small short-circuit current, low output power and low energy utilization rate of a radioactive source.
Disclosure of Invention
The invention aims to reduce the influence caused by the self-absorption effect of a radioactive source, improve the electrical performance of a radiation volt-effect nuclear battery and simultaneously reduce the influence of radiation damage on the electrical performance of the nuclear battery.
In order to achieve the above object, the present invention provides a nuclear battery integrating energy carrying and transduction, which is characterized in that the nuclear battery integrating energy carrying and transduction comprises 1-a highly doped semiconductor substrate with radioactivity, 2-a lowly doped semiconductor layer with radioactivity, 3-a battery Schottky metal layer, 4-a battery ohmic electrode and 5-a sealed shell.
One or more stable isotopes in the semiconductor energy conversion material are replaced by radioactive isotopes, and the traditional structure that the radioactive source and the semiconductor energy conversion material are separated is changed into a structure that the radioactive source is uniformly dispersed in the semiconductor energy conversion material, so that the radioactive source and the semiconductor energy conversion material form an integrated structure. The structure makes the radioactive source fully contact with the semiconductor energy conversion material, and most of alpha or beta particles emitted by the radioactive source can be deposited in the semiconductor energy conversion material, so that the problem of low energy utilization efficiency caused by the self-absorption effect of the radioactive source is solved to the greatest extent.
The 1-highly doped semiconductor substrate having radioactivity and the 2-lowly doped semiconductor layer having radioactivity may be semiconductor materials which themselves contain radioactivity, preferably isotopes of carbon having beta radioactivity14Diamond of C, Si14C or isotopes of nickel containing beta radioactivity63NiO and other wide bandgap semiconductor materials.
The Schottky metal layer and the ohmic electrode of the battery can contain one or more elements and can also have radioactivity, namely, one or more stable isotopes in the metal layer or the ohmic electrode are replaced by radioactive isotopes.
The invention combines the radioactive source and the semiconductor energy conversion structure into a whole, alpha or beta particles emitted by the radioactive isotope directly interact with the semiconductor material, the generated electron hole pair is separated by the built-in electric field of the Schottky structure and generates directional movement, and current can be formed after a closed loop is switched on;
the invention uses a Schottky type structure, only one type of doped semiconductor is needed, the influence of the asymmetry problem of the doping of the wide bandgap semiconductor is avoided, and the process is simple and convenient.
Compared with the traditional Schottky structure only using one doping concentration, the structure of combining the high doping concentration semiconductor and the low doping concentration semiconductor is more beneficial to collecting electron hole pairs and obtaining larger short-circuit current;
the invention can utilize the energy in the radioactive source, reduce the influence of self-absorption effect, improve the energy utilization rate of the radioactive source and is beneficial to obtaining larger short-circuit current;
the invention combines the radioactive source and the semiconductor into a whole, avoids energy loss caused by deposition of the radioactive source in the Schottky metal, and further improves the energy utilization rate of the radioactive source.
Drawings
FIG. 1 is a schematic view of the present invention.
Detailed Description
The invention is further described with reference to the following figures and specific examples.
Example 1
FIG. 1 is a graph based on14A schematic diagram of an energy-carrying and energy-converting integrated nuclear battery of C diamond comprises a 1-highly doped semiconductor substrate with radioactivity, a 2-lowly doped semiconductor layer p-type lowly doped semiconductor layer with radioactivity14C, a diamond layer, 3-a battery Schottky metal layer, 4-a battery ohmic electrode and 5-a sealed shell.
In this embodiment, the 1-highly doped radioactive semiconductor substrate is a p-type highly doped beta radioisotope14Single crystal diamond substrate of C, 2-low doped toolThe semiconductor layer with radioactivity is p-type low-doped beta radioisotope14C, the 3-cell Schottky metal layer is formed by beta radioisotope63The Ni-based Schottky metal layer and the 4-cell ohmic electrode are Ti/Pt/Au ohmic electrodes.
The preparation method of the energy-carrying and transduction integrated nuclear battery in the embodiment comprises the following steps:
(1) synthesis of p-type highly doped using high temperature high pressure process14C single crystal diamond substrate with crystal orientation of {001}, carbon source containing14C graphite doped with boron atoms to obtain p-type conductivity at a doping concentration of 1018cm-3。
(2) Using H2/O2With high p-type doping by mixed plasma14And C, carrying out surface pretreatment on the monocrystalline diamond substrate for 15min to remove surface pollutants.
(3) Highly doped p-type using Microwave Plasma Chemical Vapor Deposition (MPCVD)14Synthesis of p-type low doped diamond on C single crystal diamond substrate14C diamond layer using a gas of14CH4And H2P-type conductivity is obtained by doping boron atoms, the boron source being B2H6，Doping concentration<1015cm-3And finishing the preparation of the energy-carrying transduction part.
(4) Highly doped by p-type using laser cutting14C single crystal diamond substrate and p-type low doped14C diamond layer to obtain defect-free energy-carrying transducer.
(5) Etching highly p-doped in Ar-O plasma14C single crystal diamond substrate and p-type low doped14C diamond layer, obtaining an oxygen terminated surface.
(6) Highly p-doped with SAS, acetone, isopropanol14C single crystal diamond substrate and p-type low doped14And C, chemically cleaning the diamond layer, and annealing at 680 ℃ in an air environment.
(7) Highly doped in p-type by magnetron sputtering14C single crystal diamond substrateLower surface and p-type low doping14C, preparing a Ti/Pt/Au ohmic electrode by the diamond layer.
(8) Low doping of p-type in Ar atmosphere at room temperature14C diamond layer surface deposition63A Ni Schottky metal layer.
(9) And connecting a first lead and a second lead on the Ti/Pt/Au ohmic electrode, and packaging the battery by using a sealed shell.
Claims (4)
1. Carry can and transduction integrated formula nuclear battery, its characterized in that: comprises 1-a highly doped semiconductor substrate with radioactivity, 2-a lowly doped semiconductor layer with radioactivity, 3-a cell Schottky metal layer, 4-a cell ohmic electrode and 5-a sealed shell.
2. The energy and energy conversion integrated nuclear battery of claim 1, wherein: the highly doped radioactive semiconductor substrate 1 and the lowly doped radioactive semiconductor layer 2 are semiconductor materials in which one or more stable isotopes are replaced by radioactive isotopes, preferably beta-radioactive carbon isotopes14Diamond of C, Si14C or isotopes of nickel containing beta radioactivity63NiO and other wide bandgap semiconductor materials.
3. The energy and energy conversion integrated nuclear battery of claim 1, wherein: the highly doped, radioactive semiconductor substrate 1 is preferably doped with boron to a concentration of 1018cm-3Of p-type high doping14C single crystal diamond, low doped semiconductor layer 2 having radioactivity preferably being B2H6，Doping concentration<1015cm-3Of the p-type with low doping14C single crystal diamond.
4. The energy and energy conversion integrated nuclear battery of claim 1, wherein: the cell Schottky metal layer 3 and the cell ohmic electrode 4 may have radioactivity, i.e. metal layer or ohmic electrodeThe internal stable isotope or isotopes are/are replaced by radioactive isotopes, preferably isotopes63A nickel schottky metal layer made of Ni.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115064296A (en) * | 2022-07-08 | 2022-09-16 | 中国科学院长春光学精密机械与物理研究所 | Isotope battery based on beta radiation volt effect |
| CN115064297A (en) * | 2022-07-08 | 2022-09-16 | 中国科学院长春光学精密机械与物理研究所 | A GaAs-based isotope cell based on beta radiation volt effect |
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| CN107749316A (en) * | 2017-10-09 | 2018-03-02 | 哈尔滨工业大学 | Diamond schottky isotope battery and preparation method thereof |
| CN108492905A (en) * | 2018-05-28 | 2018-09-04 | 吉林大学 | A kind of diamond PIM Schottky types β radiation volta effect nuclear battery |
| CN110428923A (en) * | 2019-08-09 | 2019-11-08 | 哈尔滨工业大学 | Improve the diamond Schottky isotope battery and preparation method thereof of performance using zinc oxide film |
| CN112750547A (en) * | 2021-01-29 | 2021-05-04 | 厦门大学 | Photovoltaic electrochemical radioisotope battery |
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2021
- 2021-08-26 CN CN202110986633.4A patent/CN113707355A/en active Pending
Patent Citations (7)
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| CN101599309A (en) * | 2009-06-30 | 2009-12-09 | 西北工业大学 | SiC Schottky junction alpha radioisotope battery and its manufacturing method |
| CN101923905A (en) * | 2010-07-06 | 2010-12-22 | 西安电子科技大学 | Silicon carbide annular Schottky contact nuclear cell |
| CN102592696A (en) * | 2012-03-05 | 2012-07-18 | 南京航空航天大学 | Interlayer structure nuclear battery based on liquid semiconductor and preparation method thereof |
| CN107749316A (en) * | 2017-10-09 | 2018-03-02 | 哈尔滨工业大学 | Diamond schottky isotope battery and preparation method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115064296A (en) * | 2022-07-08 | 2022-09-16 | 中国科学院长春光学精密机械与物理研究所 | Isotope battery based on beta radiation volt effect |
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