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DE60234409D1 - Säuregenerator, Sulfonsäure, Sulfonsäurederivate und strahlungsempfindliche Zusammensetzung - Google Patents

Säuregenerator, Sulfonsäure, Sulfonsäurederivate und strahlungsempfindliche Zusammensetzung

Info

Publication number
DE60234409D1
DE60234409D1 DE60234409T DE60234409T DE60234409D1 DE 60234409 D1 DE60234409 D1 DE 60234409D1 DE 60234409 T DE60234409 T DE 60234409T DE 60234409 T DE60234409 T DE 60234409T DE 60234409 D1 DE60234409 D1 DE 60234409D1
Authority
DE
Germany
Prior art keywords
sulfonic acid
radiation
sensitive composition
acid
generator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60234409T
Other languages
English (en)
Inventor
Satoshi Ebata
Eiji Yoneda
Tomoki Nagai
Tatsuya Toneri
Yong Wang
Haruo Iwasawa
Yukio Nishimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JSR Corp
Original Assignee
JSR Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2001371311A external-priority patent/JP3826777B2/ja
Application filed by JSR Corp filed Critical JSR Corp
Application granted granted Critical
Publication of DE60234409D1 publication Critical patent/DE60234409D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
    • C07C309/01—Sulfonic acids
    • C07C309/02—Sulfonic acids having sulfo groups bound to acyclic carbon atoms
    • C07C309/23—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an unsaturated carbon skeleton containing rings other than six-membered aromatic rings
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
    • C07C309/01—Sulfonic acids
    • C07C309/02—Sulfonic acids having sulfo groups bound to acyclic carbon atoms
    • C07C309/03—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton
    • C07C309/17—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing carboxyl groups bound to the carbon skeleton
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
    • C07C309/01—Sulfonic acids
    • C07C309/02—Sulfonic acids having sulfo groups bound to acyclic carbon atoms
    • C07C309/19—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of a saturated carbon skeleton containing rings
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C381/00—Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
    • C07C381/12—Sulfonium compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D333/00—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom
    • C07D333/02—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings
    • C07D333/46—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings substituted on the ring sulfur atom
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D333/00—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom
    • C07D333/50—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom condensed with carbocyclic rings or ring systems
    • C07D333/78—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom condensed with carbocyclic rings or ring systems condensed with rings other than six-membered or with ring systems containing such rings
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D335/00—Heterocyclic compounds containing six-membered rings having one sulfur atom as the only ring hetero atom
    • C07D335/02—Heterocyclic compounds containing six-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D347/00—Heterocyclic compounds containing rings having halogen atoms as ring hetero atoms
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2602/00—Systems containing two condensed rings
    • C07C2602/36—Systems containing two condensed rings the rings having more than two atoms in common
    • C07C2602/42—Systems containing two condensed rings the rings having more than two atoms in common the bicyclo ring system containing seven carbon atoms
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2603/00—Systems containing at least three condensed rings
    • C07C2603/56—Ring systems containing bridged rings
    • C07C2603/86—Ring systems containing bridged rings containing four rings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/115—Cationic or anionic

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Materials For Photolithography (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
DE60234409T 2001-06-29 2002-06-28 Säuregenerator, Sulfonsäure, Sulfonsäurederivate und strahlungsempfindliche Zusammensetzung Expired - Lifetime DE60234409D1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001200154 2001-06-29
JP2001371311A JP3826777B2 (ja) 2001-12-05 2001-12-05 感放射線性樹脂組成物
JP2002081235 2002-03-22

Publications (1)

Publication Number Publication Date
DE60234409D1 true DE60234409D1 (de) 2009-12-31

Family

ID=27347065

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60234409T Expired - Lifetime DE60234409D1 (de) 2001-06-29 2002-06-28 Säuregenerator, Sulfonsäure, Sulfonsäurederivate und strahlungsempfindliche Zusammensetzung

Country Status (6)

Country Link
US (1) US6908722B2 (de)
EP (1) EP1270553B1 (de)
KR (1) KR100863119B1 (de)
CN (2) CN1276303C (de)
DE (1) DE60234409D1 (de)
SG (1) SG120873A1 (de)

Families Citing this family (147)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19840943A1 (de) * 1998-09-08 2000-03-09 Aventis Res & Tech Gmbh & Co Verfahren zur Herstellung von Derivaten des 4-Alkylsulfinylmethylarylenmethanols
JP4838437B2 (ja) * 2000-06-16 2011-12-14 Ｊｓｒ株式会社 感放射線性樹脂組成物
US6749987B2 (en) * 2000-10-20 2004-06-15 Fuji Photo Film Co., Ltd. Positive photosensitive composition
JP3826777B2 (ja) * 2001-12-05 2006-09-27 Ｊｓｒ株式会社 感放射線性樹脂組成物
TWI265376B (en) * 2002-03-20 2006-11-01 Sumitomo Chemical Co Positive resist composition
TWI314943B (en) * 2002-08-29 2009-09-21 Radiation-sensitive resin composition
JP3937996B2 (ja) * 2002-10-08 2007-06-27 Ｊｓｒ株式会社 感放射性樹脂組成物
US6841333B2 (en) * 2002-11-01 2005-01-11 3M Innovative Properties Company Ionic photoacid generators with segmented hydrocarbon-fluorocarbon sulfonate anions
US7371503B2 (en) * 2003-01-22 2008-05-13 Jsr Corporation Sulfonium salt compound, photoacid generator, and positive-tone radiation-sensitive resin composition
WO2004078703A1 (ja) 2003-03-05 2004-09-16 Jsr Corporation 酸発生剤、スルホン酸、スルホニルハライド化合物および感放射線性樹脂組成物
JP4083053B2 (ja) * 2003-03-31 2008-04-30 富士フイルム株式会社 ポジ型レジスト組成物
US7122294B2 (en) 2003-05-22 2006-10-17 3M Innovative Properties Company Photoacid generators with perfluorinated multifunctional anions
WO2005017617A1 (en) 2003-07-17 2005-02-24 Honeywell International Inc. Planarization films for advanced microelectronic applications and devices and methods of production thereof
KR101036793B1 (ko) * 2003-07-18 2011-05-25 오지 세이시 가부시키가이샤 시트상 발포체 및 그 제조 방법
JP4192068B2 (ja) * 2003-10-07 2008-12-03 信越化学工業株式会社 感放射線性樹脂組成物並びにこれを用いたパターン形成方法
US6939664B2 (en) * 2003-10-24 2005-09-06 International Business Machines Corporation Low-activation energy silicon-containing resist system
JP4355917B2 (ja) * 2003-10-29 2009-11-04 信越化学工業株式会社 含窒素有機化合物、レジスト材料及びパターン形成方法
JP4443898B2 (ja) * 2003-11-13 2010-03-31 富士フイルム株式会社 感光性組成物及びそれを用いたパターン形成方法
US8053159B2 (en) * 2003-11-18 2011-11-08 Honeywell International Inc. Antireflective coatings for via fill and photolithography applications and methods of preparation thereof
US20050106494A1 (en) * 2003-11-19 2005-05-19 International Business Machines Corporation Silicon-containing resist systems with cyclic ketal protecting groups
JP2005215112A (ja) * 2004-01-28 2005-08-11 Tokyo Ohka Kogyo Co Ltd ネガ型レジスト組成物、および、レジストパターン形成方法
JP4448705B2 (ja) * 2004-02-05 2010-04-14 富士フイルム株式会社 感光性組成物及び該感光性組成物を用いたパターン形成方法
US7449573B2 (en) 2004-02-16 2008-11-11 Fujifilm Corporation Photosensitive composition, compound for use in the photosensitive composition, and method of pattern formation with the photosensitive composition
US7393627B2 (en) * 2004-03-16 2008-07-01 Cornell Research Foundation, Inc. Environmentally friendly photoacid generators (PAGs) with no perfluorooctyl sulfonates (PFOS)
EP1736829A4 (de) * 2004-04-16 2011-01-05 Jsr Corp Strahlungsempfindliche harzzusammensetzung
JP4488215B2 (ja) * 2004-08-19 2010-06-23 信越化学工業株式会社 レジスト組成物並びにこれを用いたパターン形成方法
US20060046183A1 (en) * 2004-08-26 2006-03-02 Wang Yueh Photoresist formulation with surfactant additive
JP2006106311A (ja) * 2004-10-05 2006-04-20 Shin Etsu Chem Co Ltd ケイ素含有レジスト組成物並びにこれを用いたパターン形成方法
JP4452632B2 (ja) * 2005-01-24 2010-04-21 富士フイルム株式会社 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法
US7579497B2 (en) * 2005-03-30 2009-08-25 Sumitomo Chemical Company, Limited Salt suitable for an acid generator and a chemically amplified resist composition containing the same
TWI394004B (zh) * 2005-03-30 2013-04-21 Sumitomo Chemical Co 適合作為酸產生劑之鹽及含有該鹽之化學放大型光阻組成物
TWI332122B (en) * 2005-04-06 2010-10-21 Shinetsu Chemical Co Novel sulfonate salts and derivatives, photoacid generators, resist compositions and patterning process
JP4626758B2 (ja) * 2005-07-07 2011-02-09 信越化学工業株式会社 含フッ素環状構造を有するケイ素化合物及びシリコーン樹脂、それを用いたレジスト組成物、及びパターン形成方法
US7521170B2 (en) * 2005-07-12 2009-04-21 Az Electronic Materials Usa Corp. Photoactive compounds
CN1955845B (zh) * 2005-10-28 2012-06-13 住友化学株式会社 适合于酸生成剂的盐和含有该盐的化学放大型抗蚀剂组合物
EP1780198B1 (de) * 2005-10-31 2011-10-05 Shin-Etsu Chemical Co., Ltd. Neuartige Fluorosulfonyloxyalkylsulfonatsalze und Derivate, Generatoren von Photosäure, Resistzusammensetzungen, sowie Musterübertragungsverfahren
EP1780199B1 (de) * 2005-10-31 2012-02-01 Shin-Etsu Chemical Co., Ltd. Neuartige Fluorohydroxyalkylsulfonsäuresalze und Derivate, Generatoren von Photosäure, Resistzusammensetzungen, sowie Musterübertragungsverfahren
US7678528B2 (en) * 2005-11-16 2010-03-16 Az Electronic Materials Usa Corp. Photoactive compounds
TWI395062B (zh) * 2005-11-21 2013-05-01 Sumitomo Chemical Co 適合酸產生劑之鹽及含有該鹽之化學增幅阻劑組成物
JP4421566B2 (ja) * 2005-12-26 2010-02-24 チェイル インダストリーズ インコーポレイテッド フォトレジスト下層膜用ハードマスク組成物及びこれを利用した半導体集積回路デバイスの製造方法
TWI381246B (zh) * 2005-12-27 2013-01-01 Sumitomo Chemical Co 適用於酸產生劑的鹽及含有該鹽之化學增幅型阻劑組成物
US7932334B2 (en) * 2005-12-27 2011-04-26 Sumitomo Chemical Company, Limited Resin suitable for an acid generator
JP4687898B2 (ja) * 2006-03-14 2011-05-25 信越化学工業株式会社 含フッ素ケイ素化合物、シリコーン樹脂、それを用いたレジスト組成物、及びパターン形成方法
WO2007124092A2 (en) 2006-04-21 2007-11-01 Cornell Research Foundation, Inc. Photoacid generator compounds and compositions
US7300741B2 (en) * 2006-04-25 2007-11-27 International Business Machines Corporation Advanced chemically amplified resist for sub 30 nm dense feature resolution
JP4548616B2 (ja) 2006-05-15 2010-09-22 信越化学工業株式会社 熱酸発生剤及びこれを含むレジスト下層膜材料、並びにこのレジスト下層膜材料を用いたパターン形成方法
JP5124806B2 (ja) * 2006-06-27 2013-01-23 信越化学工業株式会社 光酸発生剤並びにこれを用いたレジスト材料及びパターン形成方法
JP5124805B2 (ja) * 2006-06-27 2013-01-23 信越化学工業株式会社 光酸発生剤並びにこれを用いたレジスト材料及びパターン形成方法
JP4718390B2 (ja) * 2006-08-01 2011-07-06 信越化学工業株式会社 レジスト下層膜材料並びにそれを用いたレジスト下層膜基板およびパターン形成方法
US7862980B2 (en) * 2006-08-02 2011-01-04 Sumitomo Chemical Company, Limited Salt suitable for an acid generator and a chemically amplified positive resist composition containing the same
TWI412888B (zh) * 2006-08-18 2013-10-21 Sumitomo Chemical Co 適合作為酸產生劑之鹽及含有該鹽之化學放大型正光阻組成物
TWI402249B (zh) * 2006-08-22 2013-07-21 Sumitomo Chemical Co 適合作為酸產生劑之鹽及含有該鹽之化學放大型正型光阻組成物
US7598302B2 (en) * 2006-08-30 2009-10-06 Veyance Technologies, Inc Adhesion promoter for bonding fluoropolymer layers in a multi-layered article
US7491482B2 (en) * 2006-12-04 2009-02-17 Az Electronic Materials Usa Corp. Photoactive compounds
US7390613B1 (en) * 2006-12-04 2008-06-24 Az Electronic Materials Usa Corp. Photoactive compounds
CN101196687A (zh) * 2006-12-06 2008-06-11 住友化学株式会社 化学放大型抗蚀剂组合物
TWI437364B (zh) * 2006-12-14 2014-05-11 Sumitomo Chemical Co 化學放大型阻劑組成物
US20080187868A1 (en) * 2007-02-07 2008-08-07 Munirathna Padmanaban Photoactive Compounds
US8642246B2 (en) 2007-02-26 2014-02-04 Honeywell International Inc. Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof
CN101256362B (zh) * 2007-02-28 2010-07-21 上海华虹Nec电子有限公司 化学增幅光刻胶等效扩散模拟方法
CN103583566B (zh) 2007-03-15 2016-09-07 大幸药品株式会社 纯二氧化氯液剂、含有其的凝胶状组合物及发泡性组合物
WO2009051088A1 (ja) * 2007-10-15 2009-04-23 Jsr Corporation スルホン化合物、スルホン酸塩および感放射線性樹脂組成物
TWI391781B (zh) * 2007-11-19 2013-04-01 Tokyo Ohka Kogyo Co Ltd 光阻組成物，光阻圖型之形成方法，新穎化合物及酸產生劑
US7655379B2 (en) * 2008-01-08 2010-02-02 International Business Machines Corporation Ionic, organic photoacid generators for DUV, MUV and optical lithography based on peraceptor-substituted aromatic anions
JP4513990B2 (ja) * 2008-01-18 2010-07-28 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法
JP4844761B2 (ja) * 2008-01-18 2011-12-28 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法
JP4513989B2 (ja) 2008-01-18 2010-07-28 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法
US8163461B2 (en) * 2008-04-09 2012-04-24 Cornell Research Foundation, Inc. Photoacid generator compounds and compositions
TWI528106B (zh) * 2008-07-14 2016-04-01 Jsr股份有限公司 敏輻射線性樹脂組成物
TWI490199B (zh) * 2009-03-11 2015-07-01 Sumitomo Chemical Co 化合物及化學放大型正光阻組成物
JP5544212B2 (ja) * 2009-04-27 2014-07-09 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法、化合物およびその製造方法、酸発生剤
US8557877B2 (en) 2009-06-10 2013-10-15 Honeywell International Inc. Anti-reflective coatings for optically transparent substrates
JP5645510B2 (ja) * 2009-07-10 2014-12-24 富士フイルム株式会社 感活性光線性または感放射線性樹脂組成物およびこれを用いたパターン形成方法
JP5645459B2 (ja) * 2009-07-10 2014-12-24 富士フイルム株式会社 感活性光線性または感放射線性樹脂組成物およびこれを用いたパターン形成方法
US9023579B2 (en) 2009-07-10 2015-05-05 Fujifilm Corporation Actinic-ray- or radiation-sensitive resin composition, compound and method of forming pattern using the composition
JP5580674B2 (ja) * 2009-07-14 2014-08-27 住友化学株式会社 新規化合物、レジスト組成物及びパターン形成方法
JP5658932B2 (ja) * 2009-07-14 2015-01-28 住友化学株式会社 新規化合物、レジスト組成物及びパターン形成方法
JP5675125B2 (ja) * 2009-09-30 2015-02-25 富士フイルム株式会社 感活性光線性または感放射線性樹脂組成物、及び該感光性組成物を用いたパターン形成方法
US8580478B2 (en) * 2010-02-24 2013-11-12 Basf Se Latent acids and their use
EP2539316B1 (de) 2010-02-24 2019-10-23 Basf Se Latente säuren und ihre verwendung
KR20120001609A (ko) * 2010-06-29 2012-01-04 후지필름 가부시키가이샤 반도체용 레지스트 조성물, 및 이 조성물을 사용한 레지스트막과 패턴 형성 방법
US8461378B2 (en) 2010-09-10 2013-06-11 E.I. Du Pont De Nemours And Company Purification of fluoroalkanesulfonate salts
WO2012049919A1 (ja) 2010-10-15 2012-04-19 Jsr株式会社 レジストパターン形成方法及び感放射線性樹脂組成物
US9081280B2 (en) * 2011-02-24 2015-07-14 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist having improved extreme-ultraviolet lithography imaging performance
JP5846957B2 (ja) * 2011-02-28 2016-01-20 富士フイルム株式会社 パターン形成方法、感活性光線性又は感放射線性樹脂組成物及びレジスト膜
EP2527918A2 (de) 2011-05-27 2012-11-28 Rohm and Haas Electronic Materials LLC Fotolackzusammensetzung
US8864898B2 (en) 2011-05-31 2014-10-21 Honeywell International Inc. Coating formulations for optical elements
JP5501318B2 (ja) * 2011-09-22 2014-05-21 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、並びに、これを用いたレジスト膜、パターン形成方法、電子デバイスの製造方法、及び、電子デバイス
JP5618958B2 (ja) 2011-09-22 2014-11-05 富士フイルム株式会社 パターン形成方法、感活性光線性又は感放射線性樹脂組成物、レジスト膜、電子デバイスの製造方法及び電子デバイス
DE102012202377A1 (de) 2011-10-21 2013-04-25 Tesa Se Klebemasse insbesondere zur Kapselung einer elektronischen Anordnung
JP2013173855A (ja) 2012-02-27 2013-09-05 Shin-Etsu Chemical Co Ltd 高分子化合物の製造方法、該製造方法によって製造された高分子化合物及びそれを含んだレジスト材料並びにパターン形成方法
JP5668710B2 (ja) 2012-02-27 2015-02-12 信越化学工業株式会社 高分子化合物及びそれを含んだレジスト材料並びにパターン形成方法、該高分子化合物の製造方法
DE102012206273A1 (de) 2012-04-17 2013-10-17 Tesa Se Vernetzbare Klebmasse mit Hart- und Weichblöcken als Permeantenbarriere
JP6038284B2 (ja) 2012-04-19 2016-12-07 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ スルホニウム化合物、それらの製造および使用
KR20150018608A (ko) 2012-06-04 2015-02-23 메르크 파텐트 게엠베하 광활성화되는 엣칭 페이스트 및 그의 용도
JP6020347B2 (ja) 2012-06-04 2016-11-02 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
DE102012222056A1 (de) 2012-12-03 2014-06-05 Tesa Se Lamination starrer Substrate mit dünnen Klebebändern
JP5790631B2 (ja) 2012-12-10 2015-10-07 信越化学工業株式会社 スルホニウム塩及び高分子化合物、レジスト材料及びパターン形成方法、並びに該高分子化合物の製造方法
EP2759514A1 (de) 2013-01-29 2014-07-30 tesa SE Haftklebemasse enthaltend ein verbundenes Nanopartikelnetzwerk, Verfahren zu ihrer Herstellung sowie die Verwendung derselben
JP5812030B2 (ja) 2013-03-13 2015-11-11 信越化学工業株式会社 スルホニウム塩及び高分子化合物、レジスト材料及びパターン形成方法
JP6471535B2 (ja) * 2014-03-03 2019-02-20 住友化学株式会社 レジスト組成物、レジストパターンの製造方法及び化合物
JP6474489B2 (ja) * 2014-10-29 2019-02-27 テーザ・ソシエタス・ヨーロピア 活性化可能なゲッター材料を含む接着剤
US10280344B2 (en) 2014-10-29 2019-05-07 Tesa Se Adhesive compounds comprising multi-functional siloxane water scavengers
JP6470409B2 (ja) 2014-10-29 2019-02-13 テーザ・ソシエタス・ヨーロピア シラン系水捕捉剤を含むｏｌｅｄ適合接着剤
CA2973424A1 (en) 2015-02-06 2016-08-11 Tesa Se Adhesive compound with reduced yellowness index
JP6803842B2 (ja) 2015-04-13 2020-12-23 ハネウェル・インターナショナル・インコーポレーテッドＨｏｎｅｙｗｅｌｌ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｉｎｃ． オプトエレクトロニクス用途のためのポリシロキサン製剤及びコーティング
EP3091059B1 (de) 2015-05-05 2020-09-09 tesa SE Klebeband mit klebemasse mit kontinuierlicher polymerphase
DE102015217860A1 (de) 2015-05-05 2016-11-10 Tesa Se Klebeband mit Klebemasse mit kontinuierlicher Polymerphase
DE102015222027A1 (de) 2015-11-09 2017-05-11 Tesa Se Barriereklebemasse mit polymerem Gettermaterial
US11384261B2 (en) 2016-04-04 2022-07-12 Tesa Se Radiation-activatable pressure-sensitive adhesive tape having a dark reaction and use thereof
DE102016207540A1 (de) 2016-05-02 2017-11-02 Tesa Se Wasserdampfsperrende Klebemasse mit hochfunktionalisiertem Poly(meth)acrylat
DE102016207550A1 (de) 2016-05-02 2017-11-02 Tesa Se Funktionalisierte (Co)Polymere für Klebesysteme und Klebebänder
KR101877029B1 (ko) * 2016-05-13 2018-07-11 영창케미칼 주식회사 화학증폭형 네가티브형 포토레지스트 조성물
DE102016213911A1 (de) 2016-07-28 2018-02-01 Tesa Se OLED kompatible Klebemassen mit cyclischen Azasilanwasserfängern
US11747725B2 (en) 2017-04-17 2023-09-05 Jsr Corporation Radiation-sensitive resin composition and method for forming resist pattern
KR102669089B1 (ko) * 2017-09-29 2024-05-23 니폰 제온 가부시키가이샤 포지티브형 감방사선성 수지 조성물
DE102017221072A1 (de) 2017-11-24 2019-05-29 Tesa Se Verfahren zur Herstellung haftklebriger Reaktivklebebänder
US10297370B1 (en) 2017-12-14 2019-05-21 Tesa Se Forming a rigid cable harness with a curable sleeve
DE102018202545A1 (de) 2018-02-20 2019-08-22 Tesa Se Zusammensetzung zur Erzeugung einer Klebemasse insbesondere zur Kapselung einer elektronischen Anordnung
CN112654928B (zh) 2018-09-05 2024-09-24 默克专利股份有限公司 正型光敏材料
DE102018216868A1 (de) 2018-10-01 2020-04-02 Tesa Se Latent reaktiver Klebefilm
DE102019103122A1 (de) 2019-02-08 2020-08-13 Tesa Se Mit Feuchtigkeit härtbares Klebeband und Verfahren zum Ummanteln von langgestrecktem Gut insbesondere Leitungen
DE102019103120A1 (de) 2019-02-08 2020-08-13 Tesa Se UV-härtbares Klebeband und Verfahren zum Ummanteln von langgestrecktem Gut insbesondere Leitungen
DE102019103123A1 (de) 2019-02-08 2020-08-13 Tesa Se Thermisch erweichbares Klebeband und Verfahren zum Ummanteln von langgestrecktem Gut insbesondere Leitungen
DE102019207550A1 (de) 2019-05-23 2020-11-26 Tesa Se Verfahren zur Herstellung haftklebriger Reaktivklebebänder
TWI877361B (zh) * 2020-05-21 2025-03-21 日商住友化學股份有限公司 鹽、酸產生劑、抗蝕劑組成物及抗蝕劑圖案的製造方法
DE102020208059A1 (de) 2020-06-29 2021-12-30 Tesa Se Lagerstabiles reaktives haftklebeband
US12140866B2 (en) * 2020-12-31 2024-11-12 Rohm And Haas Electronic Materials Llc Photoacid generators, photoresist compositions, and pattern formation methods
DE102021201094A1 (de) 2021-02-05 2022-08-11 Tesa Se Polyvinylaromat-Polydien-Blockcopolymer basierende Haftklebemassen mit gesteigerter Wärmescherfestigkeit
DE102021126466A1 (de) 2021-10-13 2023-04-13 Tesa Se Klebeband und Verfahren zum Ummanteln von langgestrecktem Gut insbesondere Leitungen
DE102021133426A1 (de) 2021-12-16 2023-06-22 Tesa Se Verfahren zur Ummantelung von strangförmigen Elementen
DE102022105185A1 (de) 2022-03-04 2023-09-07 Tesa Se Lösbares Laminat und Verfahren zum Lösen dauerhafter struktureller Verklebungen
DE102022105738A1 (de) 2022-03-11 2023-09-14 Tesa Se Aushärtbare Klebemasse mit verbesserter Stanzbarkeit
DE102022105737A1 (de) 2022-03-11 2023-09-14 Tesa Se Aushärtbare Klebemasse mit verbesserter Stanzbarkeit und verbesserten Schockeigenschaften
DE102022111036A1 (de) 2022-05-04 2023-11-09 Tesa Se Lichthärtende Klebemasse mit Iodonium Photoinitiatoren
DE102022117183A1 (de) 2022-07-11 2024-01-11 Tesa Se Unvernetztes Polyepoxid und Klebemasse umfassend dieses Polyepoxid
DE102022124903A1 (de) 2022-09-28 2024-03-28 Tesa Se Kationisch härtbare Klebemasse mit definierter Färbung im ausgehärteten Zustand
DE102022124904A1 (de) 2022-09-28 2024-03-28 Tesa Se Aushärtbare Haftklebemasse mit verbesserten Klebeeigenschaften
DE102022124905A1 (de) 2022-09-28 2024-03-28 Tesa Se Verfahren zur Ummantelung einer Batteriezelle
DE102022124902A1 (de) 2022-09-28 2024-03-28 Tesa Se Kationisch härtbare Klebemasse mit Indikation der Haltefestigkeit
WO2024223739A1 (en) * 2023-04-27 2024-10-31 Merck Patent Gmbh Photoactive compounds
DE102023111055A1 (de) 2023-04-28 2024-10-31 Tesa Se Chemikalienbeständiges, reaktives Haftklebeband
DE102023111054A1 (de) 2023-04-28 2024-10-31 Tesa Se Kationisch härtbare Klebmasse, insbesondere zur Verklebung von metallischen Substraten
DE102023135599A1 (de) 2023-12-18 2025-06-18 Tesa Se Aushärtbare Haftklebemasse mit hoher Verklebungsfestigkeit und guter Klebkraft im ausgehärteten Zustand
CN120230493A (zh) 2023-12-28 2025-07-01 德莎欧洲股份公司 固化性电绝缘带
DE102024107751A1 (de) 2024-03-19 2025-09-25 Tesa Se Chemikalienbeständige, reaktiv aushärtbare Klebemasse und Klebeband
DE102024107753A1 (de) 2024-03-19 2025-09-25 Tesa Se Reaktives Klebeband

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE295421C (de) *
US2913377A (en) * 1956-06-11 1959-11-17 Udylite Res Corp Aqueous electrolytic process
US2852554A (en) * 1956-07-12 1958-09-16 Du Pont Alpha-sulfopolyfluoromonocarboxylic acids and derivatives hydrolyzable thereto
JPS5346811B2 (de) * 1971-08-26 1978-12-16
US4371710A (en) * 1979-06-06 1983-02-01 Sagami Chemical Research Center Perfluoroalkyl compounds and process for preparing the same
US4650913A (en) * 1984-11-29 1987-03-17 E. I. Du Pont De Nemours And Company Sulfinate-initiated addition of perfluorinated iodides to olefins
KR910009629A (ko) * 1989-11-22 1991-06-28 도널드 밀러 쎌 플루오로지방족 그룹-치환된 에스테르 및 그의 제조방법
JPH03231592A (ja) 1990-02-06 1991-10-15 Canon Inc 投射型表示装置
JP3261819B2 (ja) * 1993-08-27 2002-03-04 三菱化学株式会社 低表面張力硫酸組成物
JP3422111B2 (ja) * 1994-12-22 2003-06-30 ジェイエスアール株式会社 感放射線性樹脂組成物
JP3587325B2 (ja) * 1996-03-08 2004-11-10 富士写真フイルム株式会社 ポジ型感光性組成物
US6187504B1 (en) * 1996-12-19 2001-02-13 Jsr Corporation Radiation sensitive resin composition
TWI250379B (en) * 1998-08-07 2006-03-01 Az Electronic Materials Japan Chemical amplified radiation-sensitive composition which contains onium salt and generator
JP4281152B2 (ja) * 1999-05-14 2009-06-17 Ｊｓｒ株式会社 スルホン酸オニウム塩化合物および感放射線性樹脂組成物
SG92753A1 (en) 1999-11-09 2002-11-19 Jsr Corp N-sulfornyloxyimide compound and radiation-sensitive resin composition using the same
EP1179750B1 (de) * 2000-08-08 2012-07-25 FUJIFILM Corporation Positiv arbeitende lichtempfindliche Zusammensetzung und Verfahren zur Herstellung einer integrierten Präzisions-Schaltung mit derselben
US6749987B2 (en) * 2000-10-20 2004-06-15 Fuji Photo Film Co., Ltd. Positive photosensitive composition
JP2002139838A (ja) * 2000-10-31 2002-05-17 Fuji Photo Film Co Ltd ポジ型レジスト組成物
US6849374B2 (en) * 2000-11-03 2005-02-01 Shipley Company, L.L.C. Photoacid generators and photoresists comprising same
JP3841399B2 (ja) * 2002-02-21 2006-11-01 富士写真フイルム株式会社 ポジ型レジスト組成物

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EP1270553A3 (de) 2004-04-21
CN1916760B (zh) 2010-10-13
KR20030023462A (ko) 2003-03-19
CN1276303C (zh) 2006-09-20
KR100863119B1 (ko) 2008-10-14
US20030113658A1 (en) 2003-06-19
SG120873A1 (en) 2006-04-26
CN1916760A (zh) 2007-02-21

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