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JP2000260796A - Method for resin-coating semiconductor wafer - Google Patents

Method for resin-coating semiconductor wafer

Info

Publication number
JP2000260796A
JP2000260796A JP11064102A JP6410299A JP2000260796A JP 2000260796 A JP2000260796 A JP 2000260796A JP 11064102 A JP11064102 A JP 11064102A JP 6410299 A JP6410299 A JP 6410299A JP 2000260796 A JP2000260796 A JP 2000260796A
Authority
JP
Japan
Prior art keywords
resin
mold
film
semiconductor wafer
cavity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11064102A
Other languages
Japanese (ja)
Other versions
JP4011781B2 (en
Inventor
Keiji Maeda
啓司 前田
Shigeru Miyagawa
茂 宮川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Towa Corp
Original Assignee
Towa Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Towa Corp filed Critical Towa Corp
Priority to JP06410299A priority Critical patent/JP4011781B2/en
Priority to SG200001259A priority patent/SG92685A1/en
Priority to KR1020000011433A priority patent/KR100357362B1/en
Priority to EP00301890A priority patent/EP1035572A3/en
Priority to MYPI20000901A priority patent/MY120473A/en
Priority to TW089104272A priority patent/TW460989B/en
Priority to US09/523,420 priority patent/US6346433B1/en
Publication of JP2000260796A publication Critical patent/JP2000260796A/en
Application granted granted Critical
Publication of JP4011781B2 publication Critical patent/JP4011781B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Moulds For Moulding Plastics Or The Like (AREA)
  • Casting Or Compression Moulding Of Plastics Or The Like (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

PROBLEM TO BE SOLVED: To enhance productivity of a resin-coating wafer, when a mounting face of a bump of a semiconductor wafer is coated with a resin by the use of a resin-coating die (both upper and lower dies) for forming the resin coating wafer. SOLUTION: Semiconductor wafers 4 are supplied to a prescribed position in a lower die cavity 5 with setting a bump-mounting face as an upper face, and the required amount of a resin material 6 is supplied to the bump-mounting face, and also both dies 1, 2 are clamped, so that an open air intercepting range 34 containing at least the cavity 5 is evacuated to set at least the interior of the cavity 5 in a predetermined vacuum condition, and also the resin material is heated and fused. Next an upper die face stretching film 7 is abutted on the front end part of a bump 3, and also the bump-mounting face of the semiconductor wafer 4 in the cavity 5 is coated with resin, to form a resin-coating wafer 12.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】この発明は、例えば、半田バ
ンプ(突起電極)等が装着された半導体ウェーハのバン
プ装着面を樹脂で被覆する半導体ウェハーの樹脂被覆方
法の改良に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an improvement in a resin coating method for a semiconductor wafer in which a bump mounting surface of a semiconductor wafer on which, for example, solder bumps (protruding electrodes) are mounted is coated with resin.

【0002】[0002]

【従来の技術】従来より、例えば、チップサイズパッケ
ージ(CPS)等における半導体チップのバンプ装着面
を樹脂で被覆することによって柔らかくて損傷し易いバ
ンプを保護・補強することが行われているが、このチッ
プに対する樹脂被覆は半導体ウェーハの段階(ウェーハ
レベル)で行われている。例えば、図5(1)・図5
(2)に示す樹脂被覆用金型を用いて、まず、前記した
半導体ウェーハのバンプ装着面を樹脂被覆して樹脂被覆
ウェーハを形成し、次に、前記樹脂被覆ウェーハを切断
分離して多数の樹脂被覆チップを形成することが行われ
ている。
2. Description of the Related Art Conventionally, for example, it has been practiced to protect and reinforce soft and easily damaged bumps by coating a bump mounting surface of a semiconductor chip in a chip size package (CPS) or the like with a resin. The resin coating on the chip is performed at the semiconductor wafer stage (wafer level). For example, FIG.
First, using the resin-coated mold shown in (2), the bump mounting surface of the semiconductor wafer is resin-coated to form a resin-coated wafer, and then the resin-coated wafer is cut and separated into a large number of pieces. Forming a resin-coated chip has been performed.

【0003】即ち、図5(1)・図5(2)に示す金型
には、上型81と、下型82とが対向配置して設けられ
ると共に、前記上型81の型面にはバンプ露出用のフィ
ルム83が張設されるように構成され、前記下型82に
は、前記バンプ88が装着された半導体ウェーハ84を
供給セットする樹脂被覆用のキャビティ85と、前記キ
ャビティ85を含む嵌合孔86と、前記嵌合孔86内を
上下摺動する前記キャビティ85の底面を含む底面部材
87とが設けられて構成されている。従って、図5
(1)に示すように、まず、前記上型81の型面に前記
フィルム83を張設すると共に、前記キャビティ85内
に前記半導体ウェーハ84をそのバンプ装着面を上面側
にした状態で供給セットし且つ前記バンプ装着面上に所
要量の樹脂材料89を供給し、前記上下両型81・82
を型締めすると共に、前記キャビティ85内の樹脂材料
89を加熱溶融化する。次に、図5(2)に示すよう
に、前記キャビティにおいて、前記底面部材87に前記
半導体ウェーハ84を載置した状態で前記底面部材87
を上動することにより、前記フィルム83に前記バンプ
88の先端部を当接させる。このとき、少なくとも前記
ウェーハ84のバンプ装着面が樹脂で被覆されることと
になるので、前記キャビティ85内で形成される樹脂被
覆ウェーハ90の樹脂被覆面(バンプ装着面)におい
て、前記バンプ88におけるフィルム83と当接した部
分(バンプ先端部)が樹脂表面に露出することになる。
That is, the mold shown in FIGS. 5A and 5B is provided with an upper die 81 and a lower die 82 opposed to each other. The lower die 82 includes a cavity 85 for supplying and setting a semiconductor wafer 84 on which the bumps 88 are mounted, and the cavity 85 for resin coating. A fitting hole 86 and a bottom member 87 including the bottom surface of the cavity 85 that slides up and down in the fitting hole 86 are provided. Therefore, FIG.
As shown in (1), first, the film 83 is stretched on the mold surface of the upper die 81, and the semiconductor wafer 84 is supplied and set in the cavity 85 with the bump mounting surface thereof facing upward. Then, a required amount of resin material 89 is supplied onto the bump mounting surface, and the upper and lower molds 81 and 82 are supplied.
And the resin material 89 in the cavity 85 is heated and melted. Next, as shown in FIG. 5B, in the cavity, the bottom member 87 is placed with the semiconductor wafer 84 placed on the bottom member 87.
Is moved upward so that the tip of the bump 88 abuts on the film 83. At this time, since at least the bump mounting surface of the wafer 84 is covered with the resin, the resin-coated surface (bump mounting surface) of the resin-coated wafer 90 formed in the cavity 85 has The portion (the tip of the bump) in contact with the film 83 is exposed on the resin surface.

【0004】[0004]

【発明が解決しようとする課題】しかしながら、前記し
た嵌合孔と底面部材との隙間(摺動部)に溶融樹脂材料
が浸入して硬化することにより、前記隙間に樹脂ばり
(硬化物)が発生して前記底面部材に摺動不良が発生し
易い。従って、前記隙間に発生する樹脂ばりを頻繁に除
去しなければならず、前記樹脂被覆ウェーハの生産性が
低下すると云う弊害がある。また、前記摺動不良の発生
によって、前記底面部材で前記キャビティ内の樹脂に充
分な樹脂圧を加えることができなくなるので、前記フィ
ルムに前記バンプを当接することができず、前記バンプ
が樹脂内に完全に埋没して前記バンプが外部接続用とし
ての機能を果たさなくなる等、高品質性・高信頼性の樹
脂被覆ウェーハ(樹脂被覆チップ)を得ることができな
いと云う弊害がある。
However, when the molten resin material penetrates into the gap (sliding portion) between the fitting hole and the bottom member and is hardened, the resin flash (cured material) enters the gap. This is likely to cause poor sliding on the bottom member. Therefore, it is necessary to frequently remove resin burrs generated in the gaps, and there is a problem that productivity of the resin-coated wafer is reduced. In addition, the occurrence of the sliding failure makes it impossible to apply sufficient resin pressure to the resin in the cavity with the bottom member, so that the bump cannot be brought into contact with the film, and In other words, there is a problem that it is impossible to obtain a high-quality and high-reliability resin-coated wafer (resin-coated chip).

【0005】そこで、本発明は、樹脂被覆ウェーハの生
産性を向上させることができる半導体ウェハーの樹脂被
覆方法を提供することを目的とするものである。また、
本発明は、高品質性・高信頼性の樹脂被覆ウェーハを得
ることができる半導体ウェハーの樹脂被覆方法とを提供
することを目的とするものである。
Accordingly, an object of the present invention is to provide a resin coating method for a semiconductor wafer, which can improve the productivity of the resin-coated wafer. Also,
SUMMARY OF THE INVENTION An object of the present invention is to provide a resin coating method for a semiconductor wafer capable of obtaining a high quality and high reliability resin coated wafer.

【0006】[0006]

【課題を解決するための手段】前記した技術的課題を解
決するための本発明に係る半導体ウェハーの樹脂被覆方
法は、バンプを装着した半導体ウェーハのバンプ装着面
を樹脂で被覆する樹脂被覆用金型の一方の型面に設けた
樹脂被覆用金型キャビティの底面の所定位置に前記半導
体ウェーハを、前記バンプ装着面を前記金型キャビティ
底面とは反対側にした状態で、載置供給する半導体ウェ
ーハの供給工程と、前記金型の他方の型面にバンプ露出
用フィルムを張設するフィルムの張設工程と、前記半導
体ウェーハの供給工程時に、前記金型キャビティ底面に
前記ウェーハを吸着・固定する半導体ウェーハの吸着・
固定工程と、前記フィルムの張設工程時に、前記金型の
他方の型面に前記フィルムを吸着・固定するフィルムの
吸着・固定工程と、前記金型キャビティ内に樹脂材料を
所要量供給する樹脂材料の供給工程と、前記金型を型締
めする金型の型締工程と、前記金型キャビティ内で前記
樹脂材料を加熱溶融化する樹脂材料の加熱溶融化工程
と、前記金型の他方の型面に設けた押圧部材で前記フィ
ルムを前記金型キャビティ方向に押圧する押圧部材によ
る押圧工程と、前記押圧部材による押圧工程時に、前記
金型キャビティ内で前記バンプ先端部に前記フィルムを
当接するフィルムの当接工程と、前記押圧部材による押
圧工程時に、前記フィルムを介して前記金型キャビティ
内の樹脂を加圧することによって前記した半導体ウェー
ハのバンプ装着面を樹脂で被覆する半導体ウェーハの樹
脂被覆成形工程と、前記金型を型開きして前記金型キャ
ビティ内から前記バンプ装着面を樹脂で被覆した樹脂被
覆半導体ウェーハを離型する樹脂被覆ウェーハの離型工
程とを備えたことを特徴とする。
According to the present invention, there is provided a method for coating a resin on a semiconductor wafer, comprising the steps of: providing a resin for coating a bump mounting surface of a semiconductor wafer on which bumps are mounted; A semiconductor for placing and supplying the semiconductor wafer at a predetermined position on the bottom surface of the resin coating mold cavity provided on one mold surface of the mold, with the bump mounting surface being opposite to the mold cavity bottom surface. A wafer supplying step, a film extending step for extending a bump exposing film on the other mold surface of the mold, and a semiconductor wafer supplying step, wherein the wafer is sucked and fixed to the mold cavity bottom surface during the semiconductor wafer supplying step. Semiconductor wafers
A fixing step, a film sucking / fixing step of sucking / fixing the film to the other mold surface of the mold during the film stretching step, and a resin for supplying a required amount of resin material into the mold cavity. A material supplying step, a mold clamping step of clamping the mold, a heat melting step of a resin material for heating and melting the resin material in the mold cavity, and the other of the molds. A pressing step of pressing the film in the direction of the mold cavity with a pressing member provided on a mold surface; and, during the pressing step of the pressing member, contacting the film with the tip of the bump in the mold cavity. During the contacting step of the film and the pressing step by the pressing member, the bump mounting surface of the semiconductor wafer is pressed by pressing the resin in the mold cavity through the film. A resin-coated molding step of a semiconductor wafer to be coated with a resin, and a mold release of the resin-coated semiconductor wafer in which the mold is opened and the resin-coated semiconductor wafer in which the bump mounting surface is coated with the resin from within the mold cavity is released. And a process.

【0007】また、前記した技術的課題を解決するため
の本発明に係る半導体ウェハーの樹脂被覆方法は、前記
した金型の型締工程時に、少なくとも金型キャビティ内
を真空引きして所定の真空状態にすることを特徴とす
る。
In addition, the method for coating a resin on a semiconductor wafer according to the present invention for solving the above-mentioned technical problems is characterized in that at least the inside of the mold cavity is evacuated to a predetermined vacuum during the mold clamping step. It is characterized by being in a state.

【0008】[0008]

【発明の実施の形態】即ち、半導体ウェーハの樹脂被覆
用金型(上下両型)を用いて、まず、前記した下型キャ
ビティ内の所定位置に前記半導体ウェーハをそのバンプ
装着面を上面にして供給し、且つ、前記バンプ装着面上
に樹脂材料を所要量供給すると共に、前記両型を型締め
することにより、少なくとも前記キャビティを含む外気
遮断範囲から真空引きして少なくとも前記したキャビテ
ィ内を所定の真空状態にすると共に、前記樹脂材料を加
熱溶融化し、次に、前記上型面張設フィルム7を前記バ
ンプ先端部に当接すると共に、前記キャビティ内で前記
半導体ウェーハのバンプ装着面を樹脂で被覆して樹脂被
覆ウェーハを形成する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS First, using a mold (both upper and lower dies) for resin coating of a semiconductor wafer, first, the semiconductor wafer is placed at a predetermined position in the lower mold cavity with its bump mounting surface facing upward. Supplying and supplying a required amount of the resin material onto the bump mounting surface, and clamping the two dies, thereby evacuating at least the inside of the cavity by evacuating the outside air blocking range including at least the cavity. And the resin material is heated and melted. Then, the upper mold surface covering film 7 is brought into contact with the tip of the bump, and the bump mounting surface of the semiconductor wafer is filled with resin in the cavity. Coating to form a resin coated wafer.

【0009】[0009]

【実施例】以下、本発明を実施例図に基づいて詳細に説
明する。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail with reference to the drawings.

【0010】即ち、図例に示す金型は、固定上型1と、
該固定上型1に対向配置した可動下型2とから構成され
ている。また、前記下型2の型面にはバンプ突起電極3
が装着された半導体ウェーハ4を前記バンプ装着面を上
面(型面側)にした状態で供給セットする樹脂被覆用キ
ャビティ5が設けられて構成されると共に、前記キャビ
ティ5の底面の所定位置に載置供給されたウェーハ4の
バンプ装着面上に、例えば、粉末状或いは顆粒状の樹脂
材料6を所要量供給することができるように構成されて
いる。また、前記上型1の型面にはバンプ露出用のフィ
ルム7(離型フィルム)が張設されると共に、該上型1
には、前記下型キャビティ5の下型面形状に対応した押
圧面(上型面)を備えた押圧部材8と、前記押圧部材8
を上下動する上下動機構9とが設けられている。従っ
て、前記上下動機構9で前記押圧部材8を下動させるこ
とによって、前記バンプ3の先端部に前記フィルム7に
当接させることができるように構成されると共に、前記
キャビティ5内の樹脂を前記フィルム7を介して所定の
樹脂圧で加圧することができるように構成されている。
また、前記キャビティ5の外周囲(下型面)には、前記
フィルム7を型面に係止して固定する係止部材10(環状
突起)が設けられると共に、前記両型の型締時1・2
に、前記フィルム7を前記両型面間に挟持固定して下型
キャビティ面に張設することができるように構成されて
いる。また、図示はしていないが、前記金型には樹脂成
形温度にまで加熱する加熱手段が設けられて構成される
と共に、前記キャビティ5内に供給された樹脂材料6を
加熱溶融化することができるように構成されている。
[0010] That is, the mold shown in FIG.
And a movable lower mold 2 disposed opposite to the fixed upper mold 1. In addition, a bump projection electrode 3 is provided on the mold surface of the lower mold 2.
A resin coating cavity 5 is provided for supplying and setting the semiconductor wafer 4 on which the bumps are mounted with the bump mounting surface facing upward (mold surface side), and is mounted at a predetermined position on the bottom surface of the cavity 5. It is configured such that a required amount of, for example, a powdery or granular resin material 6 can be supplied onto the bump mounting surface of the wafer 4 supplied and supplied. A film 7 (release film) for exposing bumps is stretched on the mold surface of the upper die 1 and
A pressing member 8 having a pressing surface (upper die surface) corresponding to the shape of the lower die surface of the lower die cavity 5;
And an up-down movement mechanism 9 for moving up and down. Therefore, by moving the pressing member 8 downward by the vertical movement mechanism 9, the tip of the bump 3 can be brought into contact with the film 7, and the resin in the cavity 5 is removed. It is configured such that it can be pressed with a predetermined resin pressure through the film 7.
A locking member 10 (annular projection) for locking and fixing the film 7 to the mold surface is provided around the outer periphery of the cavity 5 (lower mold surface).・ 2
Further, the film 7 is configured to be sandwiched and fixed between the two mold surfaces and stretched on the lower mold cavity surface. Although not shown, the mold is provided with a heating means for heating up to the resin molding temperature, and heats and melts the resin material 6 supplied into the cavity 5. It is configured to be able to.

【0011】また、図例に示すように、前記金型キャビ
ティ5の底面には前記金型キャビティ5底面に前記半導
体ウェーハ4を吸着固定する半導体ウェーハの吸着固定
手段(例えば、所要数の吸着孔)31が設けられて構成
されている。従って、前記した半導体ウェーハ4を前記
金型キャビティ5内に載置供給するとき、前記金型キャ
ビティ5底面の吸引孔31から真空引きすることによ
り、前記半導体ウェーハ4を前記金型キャビティ5底面
の所定位置に吸着・固定することができる。
As shown in the figure, the bottom surface of the mold cavity 5 is provided with a semiconductor wafer suction fixing means (for example, a required number of suction holes) for sucking and fixing the semiconductor wafer 4 on the bottom surface of the mold cavity 5. ) 31 are provided. Therefore, when the semiconductor wafer 4 is placed and supplied in the mold cavity 5, the semiconductor wafer 4 is evacuated from the suction hole 31 on the bottom surface of the mold cavity 5 so that the semiconductor wafer 4 is placed on the bottom surface of the mold cavity 5. It can be adsorbed and fixed at a predetermined position.

【0012】また、図例に示すように、前記した下型面
におけるキャビティ5の外周囲に設けられた係止部材10
の外周囲に対応する上下両型面の所定位置には、前記両
型1・2の型締時に、前記フィルム7を挟持して前記両
型面間に固定する前記フィルムの固定部材が設けられる
と共に、前記した固定部材は、下型面に設けられた環状
凸部32と、上型面に設けられた前記下型環状凸部32
に対応する環状凹部33(周溝)と、前記凹部33に設
けられた吸引排出機構35とから構成されている。従っ
て、前記上型環状凹部33内から前記吸引排出機構35
で強制的に空気等を吸引排出することによって前記上型
面に前記フィルム7を吸着固定することができるように
構成されている。また、前記両型1・2の型締時に、前
記した固定部材の環状凸部32と環状凹部33を嵌合し
且つ前記上型環状凹部33内から前記吸引排出機構35
で強制的に空気等を吸引排出して前記フィルム7を前記
凹部33内に引き込み伸張することにより、前記フィル
ム7のしわを伸ばして除去することができるように構成
されている。また、前記したフィルムの固定部材(前記
した凹部33と凸部32との組み合わせ)を、単数個或
いは複数個設ける構成を採用することができる。
As shown in the drawing, a locking member 10 provided around the cavity 5 on the lower mold surface is provided.
At a predetermined position on the upper and lower mold surfaces corresponding to the outer periphery of the film, there is provided a fixing member for the film, which clamps the film 7 and fixes the film 7 between the mold surfaces when the molds 1 and 2 are clamped. In addition, the fixing member includes an annular convex portion 32 provided on a lower mold surface and a lower annular convex portion 32 provided on an upper mold surface.
And a suction / discharge mechanism 35 provided in the recess 33. Therefore, the suction / discharge mechanism 35
Thus, the film 7 can be suction-fixed to the upper mold surface by forcibly sucking and discharging air or the like. When the molds 1 and 2 are clamped, the annular convex portion 32 and the annular concave portion 33 of the fixing member are fitted to each other, and the suction / discharge mechanism 35 is inserted from the upper annular concave portion 33.
By forcibly sucking and discharging air or the like to draw and stretch the film 7 into the concave portion 33, the wrinkles of the film 7 can be stretched and removed. Further, a configuration in which one or a plurality of the above-described film fixing members (combinations of the above-described concave portions 33 and convex portions 32) are provided can be adopted.

【0013】また、前記した金型には、少なくとも金型
キャビティ5を含む成形部を外気遮断状態に設定して構
成した少なくとも前記成形部を含む外気遮断範囲34か
ら真空引きする真空引き機構(図示なし)が設けられる
と共に、前記外気遮断範囲35から前記真空引き機構で
真空引きして少なくとも前記キャビティ5を含む成形部
を所定の真空状態にすることができるように構成されて
いる。
Further, the above-mentioned mold has a vacuuming mechanism (shown in the drawing) for evacuating at least a molding portion including the mold cavity 5 from an outside air blocking range 34 including at least the molding portion. None) is provided, and the vacuum section is evacuated from the outside air cutoff area 35 by the evacuation mechanism so that at least the molded portion including the cavity 5 can be brought into a predetermined vacuum state.

【0014】即ち、まず、前記上型1の型面に前記フィ
ルム7を張設すると共に、前記上型1の環状凹部33な
いから前記吸引排出機構35で強制的に空気等を吸引排
出することにより、前記フィルム7を前記上型面に効率
良く吸着・固定することができる。次に、前記下型キャ
ビティ5内における底面の所定位置に前記半導体ウェー
ハ4を前記バンプ3の装着面を上面にした状態で供給セ
ットし、且つ、前記バンプ装着面上に前記樹脂材料6を
所要量供給する。このとき、前記吸着固定手段31にて
前記半導体ウェーハ4を前記キャビティ5底面に効率良
く吸着・固定することができる。次に、前記下型2を上
動して前記両型面間を所要の間隔で保持する中間型締め
を行うと共に、少なくとも前記キャビティ5を含む成形
部を外気遮断状態にして外気遮断範囲34を形成し、前
記外気遮断範囲34から前記真空引き機構で真空引きす
ることにより、少なくともキャビティ5内(前記外気遮
断範囲34)を所定の真空状態にする。次に、前記下型
2を上動して前記両型面を接合する前記金型の完全型締
めを行うと共に、前記固定部材の凸部と凹部とを嵌合す
る。このとき、前記係止部材10で前記フィルム7は前
記両型面間に係止され、且つ、前記フィルム7は前記凹
部32内に引き込まれて前記フィルム7は伸張すること
になるので、前記フィルム7のしわを伸ばして効率良く
除去することができる。次に、前記キャビティ5内に供
給された樹脂材料6を加熱溶融化する。また、次に、前
記上下動機構9で前記した押圧部材8(の押圧面)を
(前記キャビティ5内における下型面の下方位置方向
に)下動して前記フィルム7を前記キャビティ5内に押
圧伸張させることによって、前記フィルム7を前記バン
プ3の先端部に当接すると共に、前記押圧部材8で前記
キャビティ5内の樹脂を前記フィルム7を介して所定の
樹脂圧で加圧する。このとき、前記フィルム7で少なく
とも前記バンプ3の先端部を樹脂と接触しない状態に構
成することができる。また、このとき、前記フィルム7
に発生するフィルムのしわを伸張して除去することがで
きると共に、前記キャビティ5内を前記フィルム7でシ
ールすることによって前記キャビティ5内に樹脂を密封
することができる。硬化に必要な所要時間の経過後、前
記両型1・2を型開きすると共に、前記両型間に樹脂被
覆ウェーハ12を前記フィルム7に付着した状態で離型
することができる。即ち、前記ウェーハ4に装着された
バンプ3の先端部を樹脂11の表面に露出した状態で前
記樹脂被覆ウェーハ12を形成することができるので、
従来例に示すような弊害をなくして、樹脂被覆ウェーハ
の生産性を向上させることができると共に、高品質性・
高信頼性の樹脂被覆ウェーハを得ることができる。ま
た、少なくとも前記したキャビティ5を含む成形部を所
定の真空状態にして樹脂被覆することができるので、前
記半導体ウェーハ4のバンプ3装着面を被覆する樹脂1
1に発生する気泡(ボイド)及び欠損部を効率良く防止
することができる。
That is, first, the film 7 is stretched on the mold surface of the upper mold 1 and the suction and discharge mechanism 35 is forcibly sucking and discharging air or the like from the annular recess 33 of the upper mold 1. Thereby, the film 7 can be efficiently sucked and fixed to the upper mold surface. Next, the semiconductor wafer 4 is supplied and set at a predetermined position on the bottom surface in the lower mold cavity 5 with the mounting surface of the bump 3 facing upward, and the resin material 6 is required on the bump mounting surface. Supply quantity. At this time, the semiconductor wafer 4 can be efficiently suctioned and fixed to the bottom surface of the cavity 5 by the suction fixing means 31. Next, the lower mold 2 is moved upward to perform an intermediate mold clamping for holding the space between the two mold surfaces at a required interval, and at least the molded portion including the cavity 5 is set in an outside air blocking state to set an outside air blocking range 34. Then, the inside of the cavity 5 (the outside air blocking range 34) is brought into a predetermined vacuum state by evacuating the outside air blocking range 34 by the vacuuming mechanism. Next, the lower die 2 is moved upward to completely close the die for joining the two die surfaces, and the convex part and the concave part of the fixing member are fitted. At this time, the film 7 is locked between the two mold surfaces by the locking member 10, and the film 7 is drawn into the concave portion 32 and the film 7 is stretched. 7 can be efficiently removed by smoothing the wrinkles. Next, the resin material 6 supplied into the cavity 5 is heated and melted. Then, the film 7 is moved into the cavity 5 by moving the pressing member 8 (the pressing surface) down (in the direction below the lower mold surface in the cavity 5) by the vertical movement mechanism 9. By pressing and extending, the film 7 comes into contact with the tip of the bump 3, and the resin in the cavity 5 is pressed by the pressing member 8 at a predetermined resin pressure via the film 7. At this time, the film 7 can be configured so that at least the tip of the bump 3 is not in contact with the resin. At this time, the film 7
In addition, the wrinkles of the film generated in the cavity 5 can be extended and removed, and the resin can be sealed in the cavity 5 by sealing the inside of the cavity 5 with the film 7. After the required time for curing has elapsed, the molds 1 and 2 can be opened, and the resin-coated wafer 12 can be released between the molds with the film 12 adhered to the film 7. That is, the resin-coated wafer 12 can be formed in a state in which the tip of the bump 3 mounted on the wafer 4 is exposed on the surface of the resin 11.
Eliminating the adverse effects shown in the conventional example, it is possible to improve the productivity of resin-coated wafers,
A highly reliable resin-coated wafer can be obtained. In addition, since the molded part including at least the cavity 5 can be coated with a resin in a predetermined vacuum state, the resin 1 covering the mounting surface of the semiconductor wafer 4 with the bumps 3 can be formed.
In this case, bubbles (voids) and defective portions generated in 1 can be efficiently prevented.

【0015】また、前記した実施例において、前記固定
部材(前記した凹部33と凸部32と吸引排出機構3
5)を複数個設けた構成の場合、前記した両型の型締時
に、前記凹部32内から、略同時的に、或いは、各別
に、或いは、外側の凹部32から順次に、或いは、任意
に且つ適宜に、強制的に吸引排出して前記凹部32内に
前記フィルム7を引き込み伸張して前記フィルム7のし
わを伸ばす構成を採用することができる。
In the above-described embodiment, the fixing member (the concave portion 33 and the convex portion 32 and the suction / discharge mechanism 3 described above) may be used.
In the case of a configuration in which a plurality of 5) are provided, at the time of the mold clamping of the above-mentioned two dies, substantially simultaneously from inside the concave portion 32, individually, or sequentially from the outer concave portion 32, or arbitrarily. In addition, it is possible to employ a structure in which the film 7 is forcibly sucked and discharged to draw the film 7 into the concave portion 32 and stretched to extend the wrinkles of the film 7.

【0016】また、前記した実施例の中間型締時におい
て、前記下型2を継続して上動させる構成を採用するこ
とができる。
Further, it is possible to adopt a structure in which the lower mold 2 is continuously moved upward during the intermediate mold clamping in the above-described embodiment.

【0017】なお、図4(1)・図4(2)に示す樹脂
被覆ウェーハ12は、図4(2)に示すチップ13毎に
切断分離され、図4(3)に示す樹脂被覆チップ14が
形成されると共に、前記した樹脂被覆チップ14の樹脂
11の表面に露出したバンプ3の先端部を、例えば、基
板等と電気的に接続することができるように構成されて
いる。
The resin-coated wafer 12 shown in FIGS. 4 (1) and 4 (2) is cut and separated into chips 13 shown in FIG. 4 (2), and the resin-coated chips 14 shown in FIG. Is formed, and the tip of the bump 3 exposed on the surface of the resin 11 of the resin-coated chip 14 can be electrically connected to, for example, a substrate or the like.

【0018】また、前記した実施例においては、金型に
単数個のキャビティを設ける構成を例示したが、金型に
複数個のキャビティを設ける構成を採用してもよい。
Further, in the above-described embodiment, a configuration in which a single cavity is provided in the mold is illustrated. However, a configuration in which a plurality of cavities are provided in the mold may be employed.

【0019】また、前記した実施例では、粉末状或いは
顆粒状樹脂材料を用いる構成を例示したが、例えば、樹
脂タブレット等の種々の形状の樹脂材料を用いることが
できる。また、前記した実施例では、熱硬化性樹脂材料
を用いる構成を例示したが、例えば、熱可塑性樹脂材料
等を採用することができる。
Further, in the above-described embodiment, a configuration using a powdery or granular resin material has been exemplified, but various shapes of resin materials such as a resin tablet can be used. Further, in the above-described embodiment, the configuration using the thermosetting resin material is exemplified. However, for example, a thermoplastic resin material or the like can be adopted.

【0020】本発明は、上述した各実施例に限定される
ものではなく、本発明の趣旨を逸脱しない範囲内で、必
要に応じて、任意に且つ適宜に変更・選択して採用でき
るものである。
The present invention is not limited to the above-described embodiments, but may be arbitrarily and appropriately changed and selected as necessary without departing from the spirit of the present invention. is there.

【0021】[0021]

【発明の効果】本発明によれば、樹脂被覆ウェーハの生
産性を向上させることができる半導体ウェハーの樹脂被
覆方法を提供することができると云った優れた効果を奏
するものである。
According to the present invention, there is provided an excellent effect that it is possible to provide a resin coating method for a semiconductor wafer which can improve the productivity of a resin-coated wafer.

【0022】また、本発明によれば、高品質性・高信頼
性の樹脂被覆ウェーハを得ることができる半導体ウェハ
ーの樹脂被覆方法を提供することができると云う優れた
効果を奏するものである。
Further, according to the present invention, there is provided an excellent effect that a resin coating method for a semiconductor wafer capable of obtaining a resin coated wafer of high quality and high reliability can be provided.

【図面の簡単な説明】[Brief description of the drawings]

【図1】図1(1)・図1(2)は本発明に係る半導体
ウェーハの樹脂被覆金型を概略的に示す概略縦断面図で
あって、図1(1)は半導体ウェーハとフィルムとの供
給状態を示し、図1(2)は前記した半導体ウェーハの
吸着・固定状態を示している。
FIGS. 1 (1) and 1 (2) are schematic longitudinal sectional views schematically showing a resin-coated mold for a semiconductor wafer according to the present invention, and FIG. 1 (1) shows a semiconductor wafer and a film. FIG. 1 (2) shows the state of suction and fixation of the semiconductor wafer described above.

【図2】図2(1)・図2(2)は本発明に係る半導体
ウェーハの樹脂被覆金型を概略的に示す概略縦断面図で
あって、図2(1)は、樹脂材料の供給状態を示し、図
2(2)は前記して金型に形成した外気遮断範囲から真
空引きした状態を示しているる
FIGS. 2 (1) and 2 (2) are schematic longitudinal sectional views schematically showing a resin-coated mold for a semiconductor wafer according to the present invention, and FIG. FIG. 2 (2) shows a state where the air is evacuated from the outside air blocking range formed in the mold as described above.

【図3】図3(1)・図3(2)は本発明に係る半導体
ウェーハの樹脂被覆金型を概略的に示す概略縦断面図で
あって、図3(1)は半導体ウェーハのバンプ先端部に
フィルムを当接した状態を示し、図3(2)は金型を型
開きして樹脂被覆ウェーハを離型した状態を示してい
る。
3 (1) and 3 (2) are schematic longitudinal sectional views schematically showing a resin-coated mold of a semiconductor wafer according to the present invention, and FIG. 3 (1) is a bump of the semiconductor wafer. FIG. 3B shows a state in which the film is in contact with the leading end, and FIG. 3B shows a state in which the mold is opened and the resin-coated wafer is released.

【図4】図4(1)は樹脂被覆ウェーハを概略的に示す
一部切欠概略側面図であり、図4(2)は図4(1)に
示す樹脂被覆ウェーハの概略底面図であり、図4(3)
は前記樹脂被覆ウェーハを切断分離して形成した樹脂被
覆チップを概略的に示す概略縦断面図である。
FIG. 4 (1) is a partially cutaway schematic side view schematically showing a resin-coated wafer, and FIG. 4 (2) is a schematic bottom view of the resin-coated wafer shown in FIG. 4 (1); FIG. 4 (3)
FIG. 2 is a schematic longitudinal sectional view schematically showing a resin-coated chip formed by cutting and separating the resin-coated wafer.

【図5】図5(1)・図5(2)は従来の樹脂被覆金型
を概略的に示す概略縦断面図である。
5 (1) and 5 (2) are schematic longitudinal sectional views schematically showing a conventional resin-coated mold.

【符号の説明】[Explanation of symbols]

1 固定上型 2 可動下型 3 バンプ 4 半導体ウェーハ 5 キャビティ 6 樹脂材料 7 フィルム 8 押圧部材 9 上下動機構 10 係止部材 11 樹脂 12 樹脂被覆ウェーハ 13 チップ 14 樹脂被覆チップ 31 半導体ウェーハの吸着固定手段 32 環状凸部 33 環状凹部 34 外気遮断範囲 35 吸引排出機構 REFERENCE SIGNS LIST 1 fixed upper mold 2 movable lower mold 3 bump 4 semiconductor wafer 5 cavity 6 resin material 7 film 8 pressing member 9 vertical movement mechanism 10 locking member 11 resin 12 resin-coated wafer 13 chip 14 resin-coated chip 31 semiconductor wafer suction fixing means 32 annular convex part 33 annular concave part 34 outside air blocking range 35 suction / discharge mechanism

フロントページの続き Fターム(参考) 4F204 AC01 AC04 AD02 AD05 AG03 AH33 AM28 AM33 FA01 FB01 FB12 FB20 FB23 FB24 FE06 FE27 FF01 FF05 FF23 FF50 FG02 FG07 FH06 FJ30 FN11 FN12 FN15 FN20 5F061 AA01 BA07 CA21 DA06 DD04Continued on front page F-term (reference) 4F204 AC01 AC04 AD02 AD05 AG03 AH33 AM28 AM33 FA01 FB01 FB12 FB20 FB23 FB24 FE06 FE27 FF01 FF05 FF23 FF50 FG02 FG07 FH06 FJ30 FN11 FN12 FN15 FN20 5F061 AA01 DD01

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 バンプを装着した半導体ウェーハのバン
プ装着面を樹脂で被覆する樹脂被覆用金型の一方の型面
に設けた樹脂被覆用金型キャビティの底面の所定位置に
前記半導体ウェーハを、前記バンプ装着面を前記金型キ
ャビティ底面とは反対側にした状態で、載置供給する半
導体ウェーハの供給工程と、 前記金型の他方の型面にバンプ露出用フィルムを張設す
るフィルムの張設工程と、 前記半導体ウェーハの供給工程時に、前記金型キャビテ
ィ底面に前記ウェーハを吸着・固定する半導体ウェーハ
の吸着・固定工程と、 前記フィルムの張設工程時に、前記金型の他方の型面に
前記フィルムを吸着・固定するフィルムの吸着・固定工
程と、 前記金型キャビティ内に樹脂材料を所要量供給する樹脂
材料の供給工程と、 前記金型を型締めする金型の型締工程と、 前記金型キャビティ内で前記樹脂材料を加熱溶融化する
樹脂材料の加熱溶融化工程と、 前記金型の他方の型面に設けた押圧部材で前記フィルム
を前記金型キャビティ方向に押圧する押圧部材による押
圧工程と、 前記押圧部材による押圧工程時に、前記金型キャビティ
内で前記バンプ先端部に前記フィルムを当接するフィル
ムの当接工程と、 前記押圧部材による押圧工程時に、前記フィルムを介し
て前記金型キャビティ内の樹脂を加圧することによって
前記した半導体ウェーハのバンプ装着面を樹脂で被覆す
る半導体ウェーハの樹脂被覆成形工程と、 前記金型を型開きして前記金型キャビティ内から前記バ
ンプ装着面を樹脂で被覆した樹脂被覆半導体ウェーハを
離型する樹脂被覆ウェーハの離型工程とを備えたことを
特徴とする半導体ウェハーの樹脂被覆方法。
The semiconductor wafer is provided at a predetermined position on the bottom surface of a resin coating mold cavity provided on one mold surface of a resin coating mold for coating a bump mounting surface of a semiconductor wafer having a bump mounted thereon with a resin. A step of supplying a semiconductor wafer to be placed and placed in a state in which the bump mounting surface is on the opposite side to the bottom surface of the mold cavity; and a film stretching step of stretching a bump exposing film on the other mold surface of the mold. Setting step, at the time of supplying the semiconductor wafer, attraction and fixing step of the semiconductor wafer to attract and fix the wafer to the bottom surface of the mold cavity, at the time of stretching the film, the other mold surface of the mold A film sucking and fixing step of sucking and fixing the film, a resin material supplying step of supplying a required amount of resin material into the mold cavity, and clamping the mold. A mold-clamping step, a heat-melting step of the resin material for heating and melting the resin material in the mold cavity, and pressing the film with the pressing member provided on the other mold surface of the mold. A pressing step by a pressing member that presses in a cavity direction; a pressing step by the pressing member; a film contacting step of contacting the film with the bump tip in the mold cavity; and a pressing step by the pressing member. A resin coating molding process for a semiconductor wafer in which the resin in the mold cavity is coated with the resin by pressing the resin in the mold cavity through the film; and the mold is opened by opening the mold. A resin-coated wafer releasing step of releasing a resin-coated semiconductor wafer having the bump mounting surface coated with resin from inside a mold cavity. Resin coating method for a semiconductor wafer.
【請求項2】 金型の型締工程時に、少なくとも金型キ
ャビティ内を真空引きして所定の真空状態にすることを
特徴とする請求項1に記載の半導体ウェハーの樹脂被覆
方法。
2. The method according to claim 1, wherein at least the inside of the mold cavity is evacuated to a predetermined vacuum state during the mold clamping step.
JP06410299A 1999-03-10 1999-03-10 Resin coating method for semiconductor wafer Expired - Fee Related JP4011781B2 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP06410299A JP4011781B2 (en) 1999-03-10 1999-03-10 Resin coating method for semiconductor wafer
SG200001259A SG92685A1 (en) 1999-03-10 2000-03-07 Method of coating semiconductor wafer with resin and mold used therefor
EP00301890A EP1035572A3 (en) 1999-03-10 2000-03-08 Method of coating semiconductor wafer with resin and mold used therefor
KR1020000011433A KR100357362B1 (en) 1999-03-10 2000-03-08 Method of coating semiconductor wafer with resin and mold used therefor
MYPI20000901A MY120473A (en) 1999-03-10 2000-03-09 Method of coating semiconductor wafer with resin and mold used therefor
TW089104272A TW460989B (en) 1999-03-10 2000-03-09 Method of coating semiconductor wafer with resin and mold used therefor
US09/523,420 US6346433B1 (en) 1999-03-10 2000-03-10 Method of coating semiconductor wafer with resin and mold used therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP06410299A JP4011781B2 (en) 1999-03-10 1999-03-10 Resin coating method for semiconductor wafer

Publications (2)

Publication Number Publication Date
JP2000260796A true JP2000260796A (en) 2000-09-22
JP4011781B2 JP4011781B2 (en) 2007-11-21

Family

ID=13248390

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Link
JP (1) JP4011781B2 (en)

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US6995038B2 (en) 2003-07-31 2006-02-07 Oki Electric Industry Co., Ltd. Method of manufacturing semiconductor device
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JP2002166449A (en) * 2000-12-01 2002-06-11 Apic Yamada Corp Method and apparatus for molding resin
US6995038B2 (en) 2003-07-31 2006-02-07 Oki Electric Industry Co., Ltd. Method of manufacturing semiconductor device
JP2005219297A (en) * 2004-02-04 2005-08-18 Apic Yamada Corp Method and apparatus for molding resin
US8202460B2 (en) 2005-09-22 2012-06-19 International Business Machines Corporation Microelectronic substrate having removable edge extension element
JP2009509349A (en) * 2005-09-22 2009-03-05 インターナショナル・ビジネス・マシーンズ・コーポレーション Microelectronic substrate with removable edge extension elements
JP2009066903A (en) * 2007-09-13 2009-04-02 Sumitomo Heavy Ind Ltd Resin sealing mold
JP2010023319A (en) * 2008-07-17 2010-02-04 Quadrant Plastic Composites Japan Ltd Stamping molding method and stamping molding mold
JP2012044139A (en) * 2010-08-16 2012-03-01 Taiwan Semiconductor Manufacturing Co Ltd System and method for sealing semiconductor device
WO2013047653A1 (en) * 2011-09-30 2013-04-04 コニカミノルタアドバンストレイヤー株式会社 Image pickup lens unit and method for manufacturing image pickup lens unit
US9151925B2 (en) 2011-09-30 2015-10-06 Konica Minolta, Inc. Image pickup lens unit and method for manufacturing image pickup lens unit
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