JP2006003761A - Method for manufacturing thin-film device, liquid crystal display apparatus, and electroluminescence display apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To cut laminated substrates after an active substrate and a counter substrate are laminated, without cutting one of the substrates, by preliminarily forming an aperture that penetrates the thickness direction of the counter substrate at the desired position of the counter substrate. <P>SOLUTION: The method for manufacturing a thin film device includes the steps of: forming a thin film device layer 12 on a first substrate 11; forming an aperture 22 penetrating in the thickness direction in a second substrate 21; aligning the first substrate 11 and the second substrate 21; and completely or partially separating or removing at least one substrate of the aligned substrates by a step, including at least one treatment of chemical treatment, polishing treatment and UV irradiation treatment. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a thin film device, a method of manufacturing a thin film device, a liquid crystal display device, and an electroluminescence display device that are formed by bonding two substrates and easily cutting the two substrates simultaneously. It is.

  In recent years, thin film devices have been required to be thinner, lighter, and more robust due to the downsizing of equipment used. For example, in a liquid crystal display device using a thin film transistor, a glass substrate is used as a substrate on which the thin film transistor is formed. In addition, as the substrate becomes thinner, the robustness rapidly decreases, which is a practical problem. As described above, the performance required for the manufacturing substrate is different from the performance required for actual use. In addition, there is an attempt to manufacture a thin film transistor directly on a thin, lightweight, and robust plastic substrate, but the difficulty is high in terms of heat-resistant temperature.

  If the glass substrate is made thinner, the rigidity of the substrate is lowered, so that it is necessary to reduce the substrate size, and there is a problem that productivity is lowered.

  In view of this, after forming a thin film device on a glass substrate having a normal thickness or after being bonded to another substrate, studies have been made to reduce the thickness of the substrate by chemical treatment, mechanical polishing treatment, ultraviolet irradiation treatment, or the like. For example, a technique for forming a thin glass substrate by etching with hydrofluoric acid is disclosed (for example, see Patent Document 1). In addition, a method of providing a release layer and separating a glass substrate after forming a thin film device (for example, see Patent Document 2) has been studied.

  Since a thin film device does not operate by itself, it needs to be electrically connected to the outside. For this reason, in general, an external connection electrode portion is provided, and this portion is connected to the outside. On the other hand, in order to protect the thin film device, the thin film device is protected by another substrate or a protective film except for the external connection electrode portion. For example, a liquid crystal display device, an organic electroluminescence (hereinafter referred to as “organic EL”) display device, or the like has a configuration in which an active substrate 501 and a counter substrate 521 are opposed to each other as shown in FIG. In the portion of the counter substrate 521 facing the external connection electrode portion 511 formed on the active substrate 501, the counter substrate 521 is not formed. Therefore, the external connection electrode portion 511 formed on the active substrate 501 is exposed.

  A substrate on which a thin film device is formed is required to be thin. However, when the substrate is thinned, there arises a problem that cutting becomes difficult. In a glass substrate used for a liquid crystal display device or an organic EL display device, a substrate is subjected to a step of applying a mechanical impact (breaking step) after a step of scratching with a diamond cutter (scribing step). Cutting.

  However, it is difficult to stably cut a glass substrate having a thickness of 0.4 mm or less by a cutting method using a scribing process and a breaking process. There is also a method of fusing the substrate by laser processing. However, as shown in FIG. 35, in order to expose the external connection electrode portion 511, it is necessary to remove only the counter substrate 521 facing the external explanation electrode portion 511. Therefore, in cutting by laser processing, It is difficult to perform cutting by selectively irradiating only the substrate (counter substrate 521) with laser. Furthermore, since the gap between the bonded substrates is narrow, the influence of laser processing heat is also exerted on the other substrate (active substrate 501), so it is difficult to cut only one of the opposing substrates. As another method, there is also a method of cutting with a blade, but both a rotating blade such as a dicer and a straight blade such as a Thomson blade both scratch the substrate facing the cutting substrate as well as the substrate to be cut with the blade. Therefore, it is extremely difficult to cut only one of the opposing substrates.

  A plastic substrate may be used as the substrate. In this case, the scribe break method cannot be used. Further, even with a cutting method other than the scribe break method described above, it is extremely difficult to cut only one of the opposing substrates, as with the above reason.

  As described above, when the substrate is made thin or a plastic substrate is used, there is a limit to the conventional scribe break method, and even when cutting by other means, it faces the external connection electrode part. It is impossible to cut only the substrate at the position.

JP-A-5-249422 Japanese Patent Laid-Open No. 10-125930

  The problem to be solved is that only one of the opposing substrates cannot be cut.

  The thin film device manufacturing method of the present invention includes a step of forming a thin film device layer on a first substrate, a step of forming an opening penetrating in the thickness direction in the second substrate, the first substrate, and the second substrate. A step of pasting the substrates together, and a step of completely or partially separating or removing at least one of the pasted substrates by a step including at least one of chemical treatment, polishing treatment, and ultraviolet irradiation treatment. Inclusion is the main feature.

  The liquid crystal display device of the present invention includes a step of forming a thin film device layer on a first substrate, a step of forming an opening penetrating in the thickness direction in the second substrate, the first substrate, the second substrate, And a step of completely or partially separating or removing at least one of the bonded substrates by a process including at least one of chemical treatment, polishing treatment and ultraviolet irradiation treatment. The most important feature is that a thin film device manufactured by a device manufacturing method is used.

  The electroluminescence display device of the present invention includes a step of forming a thin film device layer on a first substrate, a step of forming an opening penetrating in the thickness direction in the second substrate, the first substrate and the second substrate. And a step of completely or partially separating or removing at least one of the bonded substrates by a step including at least one of chemical treatment, polishing treatment, and ultraviolet irradiation treatment. The most important feature is that a thin film device manufactured by a thin film device manufacturing method is used.

  In the thin film device manufacturing method of the present invention, the first substrate on which the thin film device layer is formed and the second substrate are bonded to each other after forming the opening portion penetrating in the thickness direction on the second substrate. Since it is not necessary to cut only one of the substrates, a cutting method for simultaneously cutting both substrates can be used. For this reason, there is an advantage that the substrate can be cut even if the substrate becomes thin, and the substrate can be thinned.

  Since the liquid crystal display device and the electroluminescence display device of the present invention use the thin film device manufactured by the method of manufacturing a thin film device of the present invention, after bonding two substrates together, only one substrate on the external connection electrode portion Therefore, it is possible to use a cutting method in which both substrates are cut simultaneously. For this reason, the substrate can be cut even when the substrate is thinned, and there is an advantage that the substrate can be thinned.

  The purpose of reducing the thickness of the substrate by enabling the use of a cutting method for simultaneously cutting both of the opposing substrates is to form a thin film device layer 12 and an external layer on the first substrate 11 as shown in FIG. As shown in FIG. 1B, for example, a process of forming the connection electrode portion 13, a process of forming an opening 22 penetrating in the thickness direction in the second substrate 21 on which the transparent electrode 23 is formed, and FIG. As shown in (3), the first substrate 11 and the second substrate 21 are cured with the sealing agent 32 through a spacer 31 so that the opening 22 faces the external connection electrode portion 13. As shown in FIG. 1 (4), as a process including at least one of a chemical process, a polishing process, and an ultraviolet irradiation process, at least one of the bonded substrates is, for example, The thin film device 10 is manufactured by a manufacturing method including a step of completely or partially separating the substrate 11 or partially separating or removing in the case of FIG. 1 to cut only one of the opposing substrates. It was realized that a region facing the external connection electrode portion 13 was opened without performing the above. Thereby, a thin thin film device can be used for a liquid crystal display device and an electroluminescence display device, and thickness reduction of a liquid crystal display device and an electroluminescence display device can be promoted.

  Further, in the present invention, before the first substrate 11 and the second substrate 12 are bonded together, the external connection electrode portion 13 is exposed, so that the opening 22 that penetrates the second substrate 21 that faces the external connection electrode portion 13 is provided. Is forming. The opening 22 may be formed so as to remove all of the substrate region facing the external connection electrode unit 13, and the opening 22 forms a closed curve together with a cutting line when cutting into each panel. Then, it may be formed in a linear shape so that the substrate region facing the external connection electrode portion 13 can be separated.

  Further, after the first substrate 11 and the second substrate 21 are bonded together, a step of thinning the substrate by etching or polishing is performed. For example, in the case of thinning by etching, if the opening 22 is formed, the thin film device layer 12 (including the external connection electrode portion 13) is corroded, so that the third substrate which is another etching resistant substrate A substrate obtained by bonding the first substrate 11 and the second substrate 21 to each other (not shown) is bonded with an adhesive or the like. At that time, the third substrate is attached to the second substrate 21 side where the opening 22 is formed. If an adhesive is applied to the entire surface of the second substrate 21 when it is attached to the third substrate, the adhesive penetrates into the opening 22 and cleaning becomes difficult. Therefore, it is desirable to adhere to the third substrate by applying an adhesive only to the outer peripheral portion of the bonded substrates. Alternatively, a method may be employed in which a film (not shown) or the like is stretched on the second substrate 21 side, the opening 22 is temporarily blocked, and then the third substrate is adhered with an adhesive.

  A thin film device manufacturing method and a liquid crystal display device according to a first embodiment of the present invention will be described with reference to manufacturing process diagrams of FIGS.

  A method for forming the thin film device layer will be described with reference to the schematic sectional view of FIG. As shown in FIG. 2, a first substrate 101 is prepared. As the first substrate 101, a glass substrate having a thickness of about 0.4 mm to 1.1 mm, for example, 0.7 mm is used. A quartz substrate may be used instead of the glass substrate.

  Next, general low-temperature polysilicon technology such as “2003 FPD Technology Encyclopedia” (published on March 25, 2003, p.166-183 and p.198-201), “'99 latest liquid crystal process technology” (Press Journal 1998, p. 53-59), “Flat Panel Display 1999” (Nikkei Business Publications, 1998, p. 132-139), etc. A thin film device layer including a TFT was formed by a thin film transistor (hereinafter referred to as TFT) process. An example of a method for forming the thin film device layer will be described below.

First, a conductive film for forming the gate electrode 104 was formed over the first substrate 101. For example, a molybdenum (Mo) film having a thickness of 100 nm was used as the conductive film. As a method for forming the molybdenum film, for example, a sputtering method was used. Then, the conductive film was formed on the gate electrode 104. The gate electrode 104 was formed by patterning using a general photolithography technique and etching technique. Next, a gate insulating film 105 was formed so as to cover the gate electrode 104. The gate insulating film 105 is formed of, for example, a silicon oxide (SiO ₂ ) layer or a stacked body of a silicon oxide (SiO ₂ ) layer and a silicon nitride (SiN _x ) layer by a plasma CVD method. Further, an amorphous silicon layer (thickness 30 nm to 100 nm) was continuously formed.

This amorphous silicon layer was irradiated with a XeCl excimer laser pulse having a wavelength of 308 nm and melted and recrystallized to produce a crystalline silicon layer (polysilicon layer). Using this polysilicon layer, a polysilicon layer 106 serving as a channel formation region was formed, and a polysilicon layer 107 consisting of an n ⁻ type doped region and a polysilicon layer 108 consisting of an n ⁺ type doped region were formed on both sides thereof. . Thus, the active region has an LDD (Lightly Doped Drain) structure for achieving both a high on-current and a low off-current. A stopper layer 109 was formed on the polysilicon layer 106 to protect the channel when n ⁻ -type phosphorus ions were implanted. The stopper layer 109 is formed of, for example, a silicon oxide (SiO ₂ ) layer.

Further, a passivation film 110 made of a silicon oxide (SiO ₂ ) layer or a laminate of a silicon oxide (SiO ₂ ) layer and a silicon nitride (SiN _x ) layer was formed by plasma CVD. A source electrode 111 and a drain electrode 112 connected to each polysilicon layer 108 were formed on the passivation film 110. Each of the source electrode 111 and the drain electrode 112 is formed of a conductive material such as aluminum, an aluminum alloy, or a refractory metal.

  After forming each source electrode 111 and drain electrode 112, a color filter 113 was formed. The color filter 113 was formed by applying a color resist on the entire surface and then patterning with a lithography technique. A contact hole 113C is formed in the color filter 113 so that the source electrode 111 and a liquid crystal driving electrode to be formed later are connected. This color filter forming process was performed three times, for example, to form three colors of RGB (red, green, and blue). Next, a protective film 114 was formed for planarization. The protective film 114 is made of, for example, a polymethylmethacrylic acid resin. A contact hole 114C is formed in the protective film 114 so that the source electrode 111 and the liquid crystal driving electrode are connected. Thereafter, a pixel electrode 115 connected to the source electrode 111 was formed. The pixel electrode 115 is formed of a transparent electrode, for example. The transparent electrode is formed of indium tin oxide (ITO), for example, and a sputtering method is used as the formation method.

  In this way, the thin film device layer 116 is formed on the first substrate 101. Further, external connection electrode portions (not shown) are also formed on the first substrate 101.

  Through the above steps, an active matrix substrate (hereinafter referred to as the active substrate 100) can be formed on the first substrate 101. In addition, a bottom gate type polysilicon TFT is manufactured this time, but the same can be applied to a top gate type polysilicon TFT or an amorphous TFT.

  Next, a manufacturing example of the second substrate (counter substrate) will be described with reference to the schematic sectional view of FIG.

  As shown in FIG. 3, a plastic substrate is prepared as the support substrate 121, and a transparent electrode 122 is formed on the entire surface on the support substrate 121 side to form a second substrate (hereinafter referred to as a counter substrate) 120. Examples of the resin material used for the plastic substrate include polymethyl methacrylate resin, epoxy resin, silicone resin, urethane resin, low density polyethylene resin, fluorine resin, and the like, and glass cloth is used in the resin. May be included. Here, as an example, an epoxy resin containing glass cloth having a thickness of 0.2 mm and a linear expansion coefficient of 15 ppm was used for the support substrate 121. For the transparent electrode 122, for example, ITO (indium tin oxide) was used. This ITO film was formed by sputtering, for example.

  Next, an alignment film (for example, a polyimide film) was applied and baked on the counter substrate 120 and the active substrate 100, a rubbing process was performed, and an alignment process was performed. The rubbing direction was performed so that the counter substrate 120 and the active substrate 100 were orthogonal to each other.

  Next, as shown in FIG. 4, an opening 123 penetrating the counter substrate 120 was formed. The opening 123 is formed at a position facing an external connection electrode formed on an active substrate to be bonded in a later process. Here, the opening 123 is opposed to the external connection electrode formed on each panel, and is opened, for example, in the arrangement direction (vertical direction in the drawing) of the external connection electrode. Therefore, the openings 123 are formed in a plurality of rows with respect to the counter substrate 120. The opening 123 is formed by, for example, laser processing using a carbon dioxide laser processing apparatus. In addition to the carbon dioxide laser processing device, the opening 123 can be processed by other types of laser processing devices, cutting devices using blades such as Thomson blades, cutting devices using water jets, etc. Other cutting devices can be used. The opening 123 may be formed to include a region that is cut into a panel in a later step. Thus, the number of panels that can be taken from a single substrate can be increased by including a cutting region when the opening 123 is cut into a panel. A portion surrounded by a dotted line shown in FIGS. 4 to 7 is one panel.

  Further, as shown in FIG. 5, the opening 123 may be formed in a non-rectangular shape. That is, at a position facing the external connection electrode portion, an opening having a size corresponding to the external connection electrode portion is formed, for example, in the rectangular opening 123S, and is opposed to a portion where the external connection electrode portion is not formed. At the position, the rectangular opening 123S may be formed in a thin and linear opening 123L so as to be continuous. By forming the opening 123 in this manner, an area that can be protected by the counter substrate 120 is increased, so that a circuit or the like can be formed in a region protected by the counter substrate 120 and the outer shape of the panel can be reduced. It becomes.

  In addition, if the opening 123 formed corresponding to the external connection electrode portion of each panel is connected between the panels (vertical direction in the drawing), the rigidity of the substrate is lowered, When it grows, it can be a problem. Therefore, it is avoided by increasing the arrangement interval between the panels or reducing the external connection electrode portion. Accordingly, the shape of the opening 123 formed in the counter substrate 120 also changes. That is, as shown in FIG. 6, when the arrangement interval between the panels is increased, the opening 123 is formed for each region where the panels of the counter substrate 120 are formed. Further, as shown in FIG. 7, when the external connection electrode portion is made small, the opening 123 can also be made small on the counter substrate 120 corresponding to the formation region of the external connection electrode portion.

Next, as shown in FIG. 8, a sealant 124 was applied to the side of the active substrate 100 where the thin film device layer 116 was formed. The sealing agent 124 is applied along the outer shape of the display area of the panel, for example, except for a portion that will later become a liquid crystal injection port. On the other hand, spacers 125 were dispersed on the counter substrate 120. Then, after the two substrates were bonded together, the sealing agent 124 was cured by irradiating ultraviolet rays while applying pressure. The pressurization was performed at a pressure of about 1 kg / cm ² , for example. And the range which formed the said sealing agent 124 becomes one panel. When the active substrate 100 and the counter substrate 120 are bonded to each other, the opening 123 formed in the counter substrate 120 is opposed to the external connection electrode unit 117 formed in the active substrate 100.

  Next, as illustrated in FIG. 9, the substrate obtained by bonding the active substrate 100 and the counter substrate 120 is bonded to the third substrate 131 with the adhesive 132 with the counter substrate 120 side facing the third substrate 131 side. At this time, a gap may be provided between the counter substrate 120 and the third substrate 131, or the substrates may be in contact with each other. Also, the adhesive 132 needs to be used so as to completely seal between the active substrate 100 and the third substrate 131 from the outside. Therefore, the adhesive 132 was used only on the edge portion of the substrate. As a result, the chemical solution does not enter between the active substrate 100 and the third substrate 131 during the chemical treatment (etching) in the next process, and accordingly, the chemical solution (etching solution) enters the counter substrate 120 side. Therefore, the chemical solution does not enter the opening (not shown) formed in the counter substrate 120 and does not erode the external connection electrode part (not shown). If the adhesive 132 is put on the entire surface of the counter substrate 120, the adhesive 132 enters the opening formed in the counter substrate 120, which takes time for cleaning. Therefore, the adhesive 132 was attached only to the edge portion of the substrate.

  As the third substrate 131, a substrate that is not corroded by a subsequent chemical treatment can be used, for example, a molybdenum substrate can be used.

  The adhesive 132 is made of, for example, a thermoplastic adhesive (hot melt adhesive) having a melting point of 200 ° C. or lower. Examples of the adhesive 132 include, for example, an ethylene-vinyl acetate thermoplastic elastomer, a styrene-butadiene block copolymer, and a styrene-ethylene-butylene block as a thermoplastic adhesive (hot melt adhesive) having a melting point of 200 ° C. or less. Copolymer, styrene-isoprene block copolymer, ethylene-vinyl chloride copolymer, acetate acetate resin, polyvinyl chloride, polyethylene, polypropylene, polymethylpentene, polybutene, thermoplastic polybutadiene, polystyrene, polybutadiene, polyvinyl acetate , Polymethyl methacrylate, polyvinylidene chloride, polyvinyl alcohol, polytetrafluoroethylene, ethylene-tetrafluoroethylene copolymer, acrylonitrile-styrene copolymer (AS resin), acrylonitrile Diene styrene (ABS resin), ionomer, AAS resin, ACS resin, polyacetal, polycarbonate, polyferrite nylene ether, polyethylene terephthalate, polybutylene terephthalate, polyarylate, polysulfone, polyethersulfone, polyimide, polyamideimide, polyphenylene sulfide, polyoxy Benzoyl, polyetheretherketone, polyetherimide, liquid crystalline polyester, cellulosic plastics (cellulose acetate, cellulose acetate butyrate, ethylcellulose, celluloid cellophane), polyolefins, polyurethanes, and copolymers and polymer alloys, and waxes, paraffins, Examples include coal tar, rosin, natural rubber, and fluorine rubber.

  Next, as shown in FIG. 10, the substrate 140 bonded to the third substrate 131 is immersed in a chemical solution (etching solution) 133. As this chemical solution (etching solution), for example, a hydrofluoric acid (HF) solution having a weight concentration of 15% to 25% was used. In the etching process, etching was performed at room temperature for about 3 hours while stirring the hydrofluoric acid solution by bubbling by air blow, and a part of the first substrate (glass substrate) 101 was removed.

  As a result, as shown in FIG. 11, the first substrate 101 has a thickness of about 30 μm. The removal processing of the first substrate 101 can be performed by chemical etching as described above, but can also be performed by polishing. The polishing may be, for example, mechanical polishing, mechanical chemical polishing, or chemical polishing.

  Next, as shown in FIG. 12, in order to improve the strength, a plastic substrate 127 coated with an ultraviolet curable adhesive (not shown) is attached to the first substrate 101, vacuum defoaming is performed, and ultraviolet rays are irradiated. The plastic substrate 127 was fixed. The same plastic substrate as that used for the counter substrate was used.

  Next, the bonded substrate 141 composed of the plastic substrate 127, the active substrate 100, and the counter substrate 120 is cut except for its end portions. For example, a carbon dioxide laser processing apparatus can be used for this cutting process. As a result, as shown in FIG. 13, the bonded substrate 141 including the plastic substrate 127, the active substrate 100, and the counter substrate 120 is cut out.

  Next, as shown in FIG. 14, a bonded substrate including a plastic substrate 127, an active substrate 100, and a counter substrate 120 was cut into the size of each panel. The cutting process was performed along a cutting line indicated by a dashed line in the drawing. This cutting line is set so as to pass through the opening 123 formed in the counter substrate 120. For the cutting process, for example, a carbon dioxide laser processing apparatus can be used.

  At this time, as shown in FIG. 15, since the opening 123 penetrating in the thickness direction has already been formed in the counter substrate 120, the external connection electrodes inevitably formed in the active substrate 100 on the counter substrate 120 side. The portion 117 is exposed. The thin film device 1 manufactured by the above steps can easily expose the external electrode portion 117 even if the first substrate 101 (see FIG. 11) serving as a support substrate for the active substrate 100 is thinned. ing.

  The subsequent steps are usually the same as the generally known liquid crystal panel assembly step.

  Since the liquid crystal display device manufactured as described above uses the thin film device 1 manufactured using the method for manufacturing a thin film device of the present invention, the substrate can be thinned.

  In this embodiment, the active substrate 100 is thinned by etching, but may be used as it is without being thinned. In addition, this time, the first substrate 101 made of a glass substrate is thinned to a thickness of 30 μm. However, the first substrate 101 may be formed thicker, and if it has a sufficiently rigid thickness, a plastic substrate 127 is attached. You may use it as it is.

  In the method of manufacturing the thin film device of the first embodiment, the active substrate 100 on which the thin film device layer 116 is formed and the counter substrate 120 are bonded together after forming the opening 123 penetrating in the thickness direction of the counter substrate 120. Since it is not necessary to cut only one of the opposing substrates, a cutting method in which both substrates are cut simultaneously can be used. For this reason, the first substrate 101 can be cut even if it is thinned, and there is an advantage that the thin film device can be thinned.

  Further, since the liquid crystal display device of the first embodiment uses the thin film device 1 manufactured by the thin film device manufacturing method of the first embodiment, two substrates (the active substrate 100 and the counter substrate 120) are bonded together. After that, since it is not necessary to cut only the counter substrate 120 that is the substrate facing the external connection electrode portion 117, a cutting method that simultaneously cuts both the substrates (the active substrate 100 and the counter substrate 120) can be used. For this reason, the substrate can be cut even when the substrate is thinned, and there is an advantage that the substrate can be thinned.

  A thin film device manufacturing method and a second embodiment of the thin film device and liquid crystal display device according to the present invention will be described with reference to FIGS. In the second example, an active substrate for reflective liquid crystal was produced on a plastic substrate.

  First, a method for forming a thin film device layer will be described with reference to the schematic sectional view of FIG. As shown in FIG. 9, an amorphous silicon layer 202 is formed on the first substrate 201. As the first substrate 101, a glass substrate having a thickness of about 0.4 mm to 1.1 mm, for example, 0.7 mm is used. A quartz substrate may be used instead of the glass substrate. The film thickness of the amorphous silicon layer 202 is 50 nm, for example. If this film thickness is 10 nm to 500 nm, there is no problem. A plasma CVD method was used as a method for forming the amorphous silicon layer 202. In the plasma CVD method, a low temperature is desirable so that the amorphous silicon layer 202 contains a large amount of hydrogen and as long as the thin film device layer is not peeled off during manufacturing. This time, the film was formed at 150 ° C. There is no problem even if the amorphous silicon layer 202 is formed by low pressure CVD, atmospheric pressure plasma CVD, ECR, or sputtering.

  Next, a protective insulating layer 203 is formed over the amorphous silicon layer 202. The protective insulating layer 203 is formed with a thickness of 100 nm, for example. The protective insulating layer 203 can be formed by a plasma CVD method, for example.

  Thereafter, general low-temperature polysilicon technology such as “2003 FPD Technology Encyclopedia” (published on March 25, 2003, p.166-183 and p.198-201), “'99 latest liquid crystal process technology” ( Press Journal 1998, p. 53-59), “Flat Panel Display 1999” (Nikkei BP, 1998, p. 132-139), etc. A thin film device layer including a TFT was formed by a process (hereinafter referred to as TFT). An example of a method for forming the thin film device layer will be described below.

First, a conductive film for forming the gate electrode 204 was formed over the protective insulating layer 203 formed over the first substrate 201 with the amorphous silicon layer 202 interposed therebetween. For example, a molybdenum (Mo) film having a thickness of 100 nm was used as the conductive film. As a method for forming the molybdenum film, for example, a sputtering method was used. Then, the conductive film was formed on the gate electrode 204. The gate electrode 204 was formed by patterning using a general photolithography technique and etching technique. Next, a gate insulating film 205 was formed so as to cover the gate electrode 204. The gate insulating film 205 is formed of a silicon oxide (SiO ₂ ) layer or a stacked body of a silicon oxide (SiO ₂ ) layer and a silicon nitride (SiN _x ) layer, for example, by plasma CVD. Further, an amorphous silicon layer (thickness 30 nm to 100 nm) was continuously formed.

This amorphous silicon layer was irradiated with a XeCl excimer laser pulse having a wavelength of 308 nm and melted and recrystallized to produce a crystalline silicon layer (polysilicon layer). Using this polysilicon layer, a polysilicon layer 206 serving as a channel formation region was formed, and a polysilicon layer 207 composed of an n ⁻ type doped region and a polysilicon layer 208 composed of an n ⁺ type doped region were formed on both sides thereof. . Thus, the active region has an LDD (Lightly Doped Drain) structure for achieving both a high on-current and a low off-current. A stopper layer 209 is formed on the polysilicon layer 206 to protect the channel when n ⁻ type phosphorus ions are implanted. The stopper layer 209 is formed of a silicon oxide (SiO ₂ ) layer, for example.

Further, a passivation film 210 made of a silicon oxide (SiO ₂ ) layer or a laminate of a silicon oxide (SiO ₂ ) layer and a silicon nitride (SiN _x ) layer was formed by plasma CVD. A source electrode 211 and a drain electrode 212 connected to each polysilicon layer 208 were formed on the passivation film 210. Each of the source electrode 211 and the drain electrode 212 is formed of a conductive material such as aluminum, an aluminum alloy, or a refractory metal.

  After forming the source electrode 211 and the drain electrode 212, a protective layer 213 was formed to protect the element and to perform planarization. The protective layer 213 is formed of, for example, a polymethyl methacrylic resin material. The protective layer 213 is formed so that the surface of the protective layer 213 is uneven so that unevenness is formed on the surface of the reflective layer formed on the protective layer 213 in the next step. Next, a contact hole 213C was formed by a normal contact hole forming technique so that the source electrode 211 and a liquid crystal driving electrode formed later were connected to the protective film 213. Thereafter, a reflective layer 214 was formed on the surface of the protective layer 213 and the inner surface of the contact hole 213C. The reflective layer 214 was formed by depositing silver (Ag) by sputtering, for example.

  Through the above steps, an active matrix substrate (hereinafter referred to as an active substrate) 200 in which the thin film device layer 216 is formed on the first substrate 101 made of a glass substrate can be manufactured. Further, external connection electrode portions (not shown) are also formed on the first substrate 101. This time, a bottom gate type polysilicon TFT is fabricated, but the same can be applied to a top gate type polysilicon TFT or an amorphous TFT.

  Next, an example of manufacturing the second substrate (counter substrate) will be described with reference to the schematic cross-sectional view of FIG.

  As shown in FIG. 17, a glass substrate having a thickness of, for example, 0.2 mm was prepared as the support substrate 221, and a color filter 222 was formed on the support substrate 221. The color filter 222 was formed by applying a color resist on the entire surface of the support substrate 221 and then performing patterning using a lithography technique. For example, the color filter 222 was formed three times to form three colors of RGB (red, green, and blue). Next, an overcoat film 223 was formed for planarization. The overcoat film 223 is made of, for example, a polymethylmethacrylic acid resin. Thereafter, a transparent electrode 224 is formed on the overcoat film 223. The transparent electrode 224 is made of, for example, indium tin oxide (ITO), and a sputtering method is used as the formation method. In this way, the counter substrate 220 is formed.

  Next, an alignment film (for example, a polyimide film) was applied and baked on the counter substrate 220 and the active substrate 200, a rubbing process was performed, and an alignment process was performed. The rubbing direction was performed so that the counter substrate 220 and the active substrate 200 were orthogonal to each other.

  Next, as shown in FIG. 18, an opening 225 penetrating the counter substrate 220 was formed. For example, the opening 225 considers a cutting line when cutting into a panel so that the counter substrate 220 at a position facing the external connection electrode portion formed on the active substrate to be bonded in a later process can be removed. Thus, the counter substrate 220 at a position facing the external connection electrode portion can be removed by the cutting line and the opening 225. The opening 225 is formed, for example, in the arrangement direction (vertical direction in the drawing) of the external connection electrode portions. Therefore, the openings 225 are formed in a plurality of rows with respect to the counter substrate 220. The opening 225 is formed by laser processing using, for example, a krypton fluorine (KrF) excimer laser processing apparatus. In addition to the KrF excimer laser processing apparatus, the opening 225 is processed by a laser processing apparatus using other laser beams such as third and fourth harmonics of a YAG laser, a cutting processing apparatus using mechanical processing, Other cutting devices such as a cutting device using a jet can be used as long as the glass substrate can be cut without causing cracks. Further, the shape of the opening 225 may be the shape described with reference to FIGS. Moreover, as shown in the said FIG. 18, in an opposing board | substrate demonstrated in the said 1st Example, an opening part can also be formed. In the drawing, a region surrounded by a dotted line is one panel.

  Next, as shown in FIG. 19, a sealant 226 was applied to the side of the active substrate 200 where the thin film device layer 216 was formed. The sealing agent 226 is applied along the outer shape of the display area of the panel, for example, except for a portion that will later become a liquid crystal injection port. On the other hand, spacers 227 were dispersed on the counter substrate 220. Then, the liquid crystal 228 was dropped onto the active substrate 200 in a vacuum, the two substrates were bonded together, and the sealing agent 226 was cured by irradiating ultraviolet rays while applying pressure. And the range which formed the said sealing agent 226 becomes one panel. When the active substrate 200 and the counter substrate 220 are attached to each other, the opening 225 formed in the counter substrate 220 is opposed to the external connection electrode portion 217 formed in the active substrate 200.

  Next, as illustrated in FIG. 20, a substrate obtained by bonding the active substrate 200 and the counter substrate 220 is pasted to the third substrate 231 with an adhesive 232 with the counter substrate 220 side facing the third substrate 231 side. At this time, a gap may be provided between the counter substrate 220 and the third substrate 231 or the substrates may be in contact with each other. Further, the adhesive 232 needs to be used so as to completely seal between the active substrate 200 and the third substrate 231 from the outside. Therefore, the adhesive 232 was used only on the edge portion of the substrate. As a result, the chemical solution does not enter between the active substrate 200 and the third substrate 231 during the chemical treatment (etching) in the next process, and therefore the chemical solution (etching solution) enters the counter substrate 220 side. Therefore, the chemical solution does not enter the opening (not shown) formed in the counter substrate 220 and does not erode the external connection electrode part (not shown). Note that if the adhesive 232 is applied to the entire surface of the counter substrate 220, the adhesive 232 enters the opening formed in the counter substrate 220, which takes time for cleaning. Therefore, the adhesive 232 was attached only to the edge portion of the substrate.

  As the third substrate 231, a substrate that is not corroded by a subsequent chemical treatment can be used, for example, a molybdenum substrate can be used.

  The adhesive 232 is made of, for example, a thermoplastic adhesive (hot melt adhesive) having a melting point of 200 ° C. or lower. Examples of the adhesive 232 include, for example, an ethylene-vinyl acetate thermoplastic elastomer, a styrene-butadiene block copolymer, and a styrene-ethylene-butylene block as a thermoplastic adhesive (hot melt adhesive) having a melting point of 200 ° C. or less. Copolymer, styrene-isoprene block copolymer, ethylene-vinyl chloride copolymer, acetate acetate resin, polyvinyl chloride, polyethylene, polypropylene, polymethylpentene, polybutene, thermoplastic polybutadiene, polystyrene, polybutadiene, polyvinyl acetate , Polymethyl methacrylate, polyvinylidene chloride, polyvinyl alcohol, polytetrafluoroethylene, ethylene-tetrafluoroethylene copolymer, acrylonitrile-styrene copolymer (AS resin), acrylonitrile Diene styrene (ABS resin), ionomer, AAS resin, ACS resin, polyacetal, polycarbonate, polyferrite nylene ether, polyethylene terephthalate, polybutylene terephthalate, polyarylate, polysulfone, polyethersulfone, polyimide, polyamideimide, polyphenylene sulfide, polyoxy Benzoyl, polyetheretherketone, polyetherimide, liquid crystalline polyester, cellulosic plastics (cellulose acetate, cellulose acetate butyrate, ethylcellulose, celluloid cellophane), polyolefins, polyurethanes, and copolymers and polymer alloys, and waxes, paraffins, Examples include coal tar, rosin, natural rubber, and fluorine rubber.

  Next, ultraviolet laser light was irradiated from the side of the first substrate 201 (see FIG. 16) made of a glass substrate of the active substrate 200. Since glass transmits ultraviolet laser light, the laser light is absorbed by the amorphous silicon layer 202 (see FIG. 16). When the amorphous silicon layer 202 absorbs ultraviolet rays, hydrogen is generated, and the thin film device layer 217 and the first substrate 201 are separated from each other with the amorphous silicon layer 202 as a boundary (Japanese Patent Laid-Open No. 10-125930 is a reference material). ). As a result, as shown in FIG. 21, the counter substrate 220 to which the thin film device layer 216 and the external connection electrode portion 217 [see FIG. 19] are transferred is left.

  Next, as shown in FIG. 22, in order to improve the strength, a plastic substrate in which an ultraviolet curable adhesive (not shown) is applied to the side of the counter substrate 220 on which the thin film device layer (not shown) is formed. 228 was attached, vacuum defoaming was performed, and ultraviolet rays were irradiated to fix the plastic substrate 228. The same plastic substrate 228 as that used for the counter substrate 220 was used.

  Next, a bonded substrate made up of the plastic substrate 228 and the counter substrate 220 bonded to the third substrate 231 with the adhesive 232 was immersed in an alcohol solution to dissolve the adhesive 232. As a result, as shown in FIG. 23, the counter substrate 220 was separated from the third substrate 231 [see FIG. 20].

  Next, as shown in FIG. 24, a laminated substrate including a plastic substrate 228, a thin film device layer 217, and a counter substrate 220 was cut into the size of each panel. For example, the cutting process is performed at the portion of the cutting line indicated by the one-dot chain line in the drawing. For example, a carbon dioxide laser processing apparatus can be used for this cutting process.

  As shown in FIG. 25, since the opening 225 that penetrates in the thickness direction has already been formed in the counter substrate 220, the external connection electrode portion (not shown) is separated when each panel is separated by cutting. The counter substrate 220 </ b> A of the portion facing the first) can be removed as it is. As a result, as shown in FIG. 26, the external connection electrode portion 217 is exposed in a state of being transferred to the plastic substrate 228 side. The thin film device 2 manufactured by the above process can easily expose the external electrode portion 117 even if the first substrate 201 [see FIG. 20] is thinned.

  The subsequent steps are usually the same as the generally known liquid crystal panel assembly step.

  Since the liquid crystal display device manufactured as described above uses the thin film device 2 manufactured by using the thin film device manufacturing method of the present invention, the substrate can be thinned.

  In the method of manufacturing the thin film device of the second embodiment, the active substrate 200 on which the thin film device layer 216 is formed and the counter substrate 220 are bonded together after the opening 225 penetrating in the thickness direction of the counter substrate 220 is formed. Since it is not necessary to cut only one of the opposing substrates, a cutting method in which both substrates are cut simultaneously can be used. Therefore, the first substrate 201 can be cut even if it is completely separated and removed, and there is an advantage that the thin film device can be thinned.

  Further, since the liquid crystal display device of the second embodiment uses the thin film device 2 manufactured by the thin film device manufacturing method of the second embodiment, two substrates (the active substrate 200 and the counter substrate 220) are bonded together. After that, since it is not necessary to cut only the counter substrate 220 that is the substrate facing the external connection electrode portion 217, a cutting method that simultaneously cuts both substrates (the active substrate 200 and the counter substrate 220) can be used. For this reason, the substrate can be cut even when the substrate is thinned, and there is an advantage that the substrate can be thinned.

  An embodiment according to a method of manufacturing a thin film device, a thin film device and an electroluminescence display device of the present invention will be described with reference to FIGS. In this example, an active matrix organic electroluminescence (hereinafter, electroluminescence is abbreviated as EL) display was produced.

  First, a method for manufacturing a thin film device layer will be described with reference to the schematic sectional view of FIG.

  As shown in FIG. 27, on a first substrate 301 made of a glass substrate, a general low-temperature polysilicon technology, for example, “2003 FPD Technology Encyclopedia” (published on March 25, 2003, p.166-183 and p. 198-201), “'99 latest liquid crystal process technology” (Press Journal 1998, p. 53-59), “Flat Panel Display 1999” (Nikkei Business Publications, 1998, p. 132-139) ) Etc., a thin film device layer including TFT was formed by a low temperature polysilicon bottom gate type thin film transistor (hereinafter referred to as TFT) process. An example of a method for forming the thin film device layer will be described below.

First, a conductive film for forming the gate electrode 304 was formed over the first substrate 301. For example, a molybdenum (Mo) film having a thickness of 100 nm was used as the conductive film. As a method for forming the molybdenum film, for example, a sputtering method was used. Then, the conductive film was processed to form a gate electrode 304. The gate electrode 304 was formed by patterning using a general photolithography technique and etching technique. Next, a gate insulating film 305 was formed so as to cover the gate electrode 304. The gate insulating film 305 is formed of a silicon oxide (SiO ₂ ) layer or a stacked body of a silicon oxide (SiO ₂ ) layer and a silicon nitride (SiN _x ) layer, for example, by plasma CVD. Further, an amorphous silicon layer (thickness 30 nm to 100 nm) was continuously formed.

This amorphous silicon layer was irradiated with a XeCl excimer laser pulse having a wavelength of 308 nm, melted and recrystallized to produce a crystalline silicon layer. Using this polysilicon layer, a polysilicon layer 306 serving as a channel formation region was formed, and a polysilicon layer 307 composed of an n ⁻ type doped region and a polysilicon layer 308 composed of an n ⁺ type doped region were formed on both sides thereof. . Thus, the active region has an LDD (Lightly Doped Drain) structure for achieving both a high on-current and a low off-current. A stopper layer 309 is formed on the polysilicon layer 306 to protect the channel when n ⁻ type phosphorus ions are implanted. The stopper layer 309 is formed of, for example, a silicon oxide (SiO ₂ ) layer.

Further, a passivation film 310 made of a silicon oxide (SiO ₂ ) layer or a laminate of a silicon oxide (SiO ₂ ) layer and a silicon nitride (SiN _x ) layer was formed by plasma CVD. A source electrode 311 and a drain electrode 312 connected to each polysilicon layer 308 were formed on the passivation film 310. Each source electrode 311 and drain electrode 312 is made of, for example, aluminum.

  In this way, a thin film transistor (TFT) was formed by a low temperature polysilicon bottom gate type thin film transistor (TFT) process.

Next, a protective insulating layer 313 is laminated on the passivation film 310 by, for example, a silicon oxide (SiO ₂ ) layer and a silicon nitride (SiN _x ) layer so as to cover the source electrode 311, the drain electrode 312, and the like by, eg, spin coating. A protective insulating layer at that portion so that the source electrode 311 can be connected to the anode electrode of the organic EL element to be formed later by a general photolithography technique and etching technique. 313 was removed.

  Next, an organic EL element was formed over the protective insulating layer 313. The organic EL element includes an anode electrode 314, an organic layer, and a cathode electrode 317. The anode electrode 314 is formed, for example, by depositing chromium (Cr) by sputtering, and is connected to the source electrode 311 of each TFT so that an electric current can flow individually.

  The organic layer has a structure in which an organic hole transport layer 315 and an organic light emitting layer 316 are laminated. As the organic hole transport layer 315, for example, copper phthalocyanine was formed to a thickness of 30 nm by vapor deposition. The organic light emitting layer 316 is green, Alq3 [tris (8-quinolinolato) aluminum (III)] is 50 nm thick, and blue is bathocuproine (2,9-dimethyl-4,7-diphenyl-1, 10phenanthroline) to a thickness of 14 nm and red as BSB-BCN [2,5-bis {4- (N-methoxyphenyl-N-phenylamino) styryl} benzene-1,4-dicarbonitrile] to a thickness of 30 nm. did.

As the cathode electrode 317, indium tin oxide (In ₂ O ₃ + SnO ₂ : ITO) was used.

  This time, the above structure was used as an organic EL element, but an electrode was combined with an electron transport layer, a hole transport layer, an electron injection layer, a hole injection layer, an electron blocking layer, a hole blocking layer, and a light emitting layer. A known structure may be used.

Further, a passivation film 318 was formed so as to cover the cathode electrode 317. This time, as the passivation film 318, a silicon nitride (SiN _x ) film having a thickness of, for example, 200 nm is formed by sputtering. Alternatively, the passivation film 318 may be formed by a CVD method, a vapor deposition method, or the like.

  In this way, the thin film device layer 319 is formed on the first substrate 301. Hereinafter, the TFT layer to the organic EL layer are referred to as a thin film device layer 319. Further, external connection electrode portions (not shown) are also formed on the first substrate 301.

  Next, as illustrated in FIG. 28, a second substrate 321 for sealing is attached to the thin film device layer 319 with an adhesive 322 interposed therebetween. As the second substrate 321, for example, a glass substrate having a thickness of 100 μm was used. The second substrate 321 has an opening 323 that penetrates in the thickness direction of the substrate as described with reference to FIG. By forming the opening 323, the external connection electrode 320 is exposed when the panel is cut as in the second embodiment. This time, the entire surface is affixed, but only the outer periphery of the panel may be affixed and a hygroscopic agent may be put inside.

  Next, as shown in FIG. 29, a protective substrate 330 is attached to the second substrate 321 side. For example, a glass substrate having a thickness of 0.7 mm is used as the protective substrate 330. Moreover, the ultraviolet peeling adhesive (not shown) was used for pasting.

  Next, as shown in FIG. 30, the first substrate 301, the second substrate 321, and the protective substrate 330 are attached to the third substrate 331 via an adhesive 332 on the protective substrate 330 side of the substrate 340. The adhesive 332 needs to be used so as to completely seal the side surface of the bonded substrate 340 and the space between the bonded substrate 340 and the third substrate 331 from the outside. Therefore, the adhesive 332 was used so as to cover from the side surface of the third substrate 331 to the side surface of the bonded substrate 340. As the third substrate 331, a substrate that is not corroded by a subsequent chemical treatment can be used, for example, a molybdenum substrate can be used. The adhesive 332 may be a hot melt adhesive as described in the first and second embodiments. In addition, since the protective substrate 330 is provided in this embodiment, the adhesive 332 may be applied to the entire surface of the protective substrate 330 as shown in the figure. Alternatively, as described in the first embodiment, the connection 32 may be used only on the end face of the substrate, and a gap may be provided between the protective substrate 330 and the third substrate 331.

  In this way, during the chemical process (etching) in the next process, the chemical does not enter between the first substrate 301 and the third substrate 331. Therefore, the chemical (etching liquid) is not present on the second substrate 321 side. ) Does not enter, so that the chemical solution does not enter the opening (not shown) formed in the second substrate 321 and erode the external connection electrode part (not shown).

  Next, as shown in FIG. 31, the substrate 340 bonded to the third substrate 331 is immersed in a chemical solution (etching solution) (not shown). As this chemical solution (etching solution), for example, a hydrofluoric acid (HF) solution having a weight concentration of 15% to 25% was used. In the above etching process, etching was performed for about 3 hours at room temperature while stirring the hydrofluoric acid solution by bubbling by air blow, and a part of the first substrate (glass substrate) 301 was removed. As a result, the first substrate 301 was thinned to a thickness of 0.1 mm.

  Next, the bonded substrate 340 bonded to the third substrate 331 with the adhesive 332 was immersed in an alcohol solution to dissolve the adhesive 332. As a result, as shown in FIG. 32, the bonded substrate 340 composed of the first substrate 301, the second substrate 321 and the protective substrate 330 was separated from the third substrate [see FIG. 31].

  Next, the protective substrate 330 was peeled from the second substrate 321 by irradiating the ultraviolet peeling adhesive with ultraviolet rays from the protective substrate 330 side. As a result, as shown in FIG. 33, a substrate is formed in which the second substrate 321 is attached to the first substrate 301 on which the thin film device layer (not shown) and the external connection electrode portion (not shown) are formed. .

  Next, as shown in FIG. 34, the second substrate 321 was bonded to the first substrate 301 on which the thin film device layer 319 and the external connection electrode portion 320 were formed, and the substrate was cut into the size of each panel. For example, a cutting process is performed at a portion indicated by a dashed line in the drawing. For example, a carbon dioxide laser processing apparatus can be used for this cutting process.

  Since the opening 323 penetrating in the thickness direction has already been formed in the second substrate 321, as in the second embodiment, the external connection electrode portion ( The portion of the second substrate 321 that faces (not shown) can be removed as it is. As a result, the external connection electrode part 320 [see FIG. 33] formed on the first substrate 301 side is exposed. The thin film device manufactured by the above steps can easily expose the external electrode portion 320 even if the first substrate 301 is processed thinly.

  Subsequent steps may be assembling an organic electroluminescence display device which is generally performed.

  Since the electroluminescence display device manufactured by the above steps uses a thin film device manufactured using the method for manufacturing a thin film device of the present invention, the substrate can be made thin.

  In the method of manufacturing the thin film device according to the third embodiment, the first substrate 301 and the second substrate 321 on which the thin film device layer 319 is formed are formed after the opening 323 that is penetrated in the thickness direction of the second substrate 321 is formed. Since the substrates are bonded together, it is not necessary to cut only one of the opposing substrates, so that a cutting method for simultaneously cutting both substrates can be used. Therefore, the first substrate 301 can be cut even if it is thinned, and there is an advantage that the thin film device can be thinned.

  Further, since the liquid crystal display device of the third embodiment uses the thin film device 3 manufactured by the method of manufacturing the thin film device of the third embodiment, two substrates (a first substrate 301 and a second substrate 321) are attached. Since it is not necessary to cut only the second substrate 321 that is the substrate facing the external connection electrode part 320 after the matching, a cutting method that simultaneously cuts both the substrates (the first substrate 301 and the second substrate 321) is used. can do. For this reason, the substrate can be cut even when the substrate is thinned, and there is an advantage that the substrate can be thinned.

  Next, a fourth embodiment will be described. In the fourth embodiment, an active substrate having the same structure as that of the active substrate used in the first embodiment is used, and a counter substrate having the same structure as the counter substrate used in the second embodiment is used. It was. However, the glass thickness of the counter substrate is equal to the glass thickness of the active substrate, and for example, a thickness of 0.7 mm is used.

  Next, the active substrate and the counter substrate were bonded together by the same method as in the second embodiment. At that time, liquid crystal was injected and sealed between the active substrate and the counter substrate. Thereafter, the first substrate side of the active substrate and the supporting substrate side of the counter substrate were processed to be thinned by polishing. For example, the first substrate as the active substrate and the support substrate as the counter substrate are polished so that the thickness is 0.2 mm. After polishing, each panel was cut to a size and washed to remove the abrasive. The cutting method described in the above embodiment can be adopted as the cutting method. Note that since the liquid crystal is injected prior to the polishing step, the abrasive does not enter the liquid crystal, and there is no problem even if polishing is performed. Before the active substrate and the counter substrate are bonded to each other, a liquid crystal alignment process is performed on both substrates. Moreover, after cutting into a panel, the process of assembling a normal liquid crystal panel may be performed.

  The thinning of both substrates bonded together as in the fourth embodiment can also be applied to the thin film device used in the electroluminescence display device described in the third embodiment.

  In the fourth embodiment, since both substrates of the bonded substrates are thinned, a thin film device thinner than the configuration of the first to third embodiments can be formed. This makes it possible to reduce the thickness of a liquid crystal display device and an electroluminescence display device using this thin film device. In the fourth embodiment, the same effects as those of the first and second embodiments can be obtained.

  The method for manufacturing a thin film device, the liquid crystal display device and the electroluminescence display device of the present invention are suitable for application to various display devices such as a display device of an electronic terminal device and a television receiver.

It is manufacturing process sectional drawing which showed embodiment which concerns on the manufacturing method of the thin film device of this invention. It is explanatory drawing which showed 1st Example which concerns on the manufacturing method of a thin film device of this invention, and a liquid crystal display device. It is explanatory drawing which showed 1st Example which concerns on the manufacturing method of a thin film device of this invention, and a liquid crystal display device. It is explanatory drawing which showed 1st Example which concerns on the manufacturing method of a thin film device of this invention, and a liquid crystal display device. It is explanatory drawing which showed 1st Example which concerns on the manufacturing method of a thin film device of this invention, and a liquid crystal display device. It is explanatory drawing which showed 1st Example which concerns on the manufacturing method of a thin film device of this invention, and a liquid crystal display device. It is explanatory drawing which showed 1st Example which concerns on the manufacturing method of a thin film device of this invention, and a liquid crystal display device. It is explanatory drawing which showed 1st Example which concerns on the manufacturing method of a thin film device of this invention, and a liquid crystal display device. It is explanatory drawing which showed 1st Example which concerns on the manufacturing method of a thin film device of this invention, and a liquid crystal display device. It is explanatory drawing which showed 1st Example which concerns on the manufacturing method of a thin film device of this invention, and a liquid crystal display device. It is explanatory drawing which showed 1st Example which concerns on the manufacturing method of a thin film device of this invention, and a liquid crystal display device. It is explanatory drawing which showed 1st Example which concerns on the manufacturing method of a thin film device of this invention, and a liquid crystal display device. It is explanatory drawing which showed 1st Example which concerns on the manufacturing method of a thin film device of this invention, and a liquid crystal display device. It is explanatory drawing which showed 1st Example which concerns on the manufacturing method of a thin film device of this invention, and a liquid crystal display device. It is explanatory drawing which showed 1st Example which concerns on the manufacturing method of a thin film device of this invention, and a liquid crystal display device. It is explanatory drawing which showed 2nd Example which concerns on the manufacturing method of a thin film device of this invention, and a liquid crystal display device. It is explanatory drawing which showed 2nd Example which concerns on the manufacturing method of a thin film device of this invention, and a liquid crystal display device. It is explanatory drawing which showed 2nd Example which concerns on the manufacturing method of a thin film device of this invention, and a liquid crystal display device. It is explanatory drawing which showed 2nd Example which concerns on the manufacturing method of a thin film device of this invention, and a liquid crystal display device. It is explanatory drawing which showed 2nd Example which concerns on the manufacturing method of a thin film device of this invention, and a liquid crystal display device. It is explanatory drawing which showed 2nd Example which concerns on the manufacturing method of a thin film device of this invention, and a liquid crystal display device. It is explanatory drawing which showed 2nd Example which concerns on the manufacturing method of a thin film device of this invention, and a liquid crystal display device. It is explanatory drawing which showed 2nd Example which concerns on the manufacturing method of a thin film device of this invention, and a liquid crystal display device. It is explanatory drawing which showed 2nd Example which concerns on the manufacturing method of a thin film device of this invention, and a liquid crystal display device. It is explanatory drawing which showed 2nd Example which concerns on the manufacturing method of a thin film device of this invention, and a liquid crystal display device. It is explanatory drawing which showed 2nd Example which concerns on the manufacturing method of a thin film device of this invention, and a liquid crystal display device. It is explanatory drawing which showed one Example which concerns on the manufacturing method and electroluminescent display apparatus of the thin film device of this invention. It is explanatory drawing which showed one Example which concerns on the manufacturing method and electroluminescent display apparatus of the thin film device of this invention. It is explanatory drawing which showed one Example which concerns on the manufacturing method and electroluminescent display apparatus of the thin film device of this invention. It is explanatory drawing which showed one Example which concerns on the manufacturing method and electroluminescent display apparatus of the thin film device of this invention. It is explanatory drawing which showed one Example which concerns on the manufacturing method and electroluminescent display apparatus of the thin film device of this invention. It is explanatory drawing which showed one Example which concerns on the manufacturing method and electroluminescent display apparatus of the thin film device of this invention. It is explanatory drawing which showed one Example which concerns on the manufacturing method and electroluminescent display apparatus of the thin film device of this invention. It is explanatory drawing which showed one Example which concerns on the manufacturing method and electroluminescent display apparatus of the thin film device of this invention. It is the schematic structure perspective view which showed an example of the display apparatus using the conventional thin film device.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 10 ... Thin film device, 11 ... 1st board | substrate, 12 ... Thin film device layer, 21 ... 2nd board | substrate, 22 ... Opening part

Claims (15)

Forming a thin film device layer on the first substrate;
Forming an opening penetrating the second substrate in the thickness direction;
Bonding the first substrate and the second substrate;
A step of completely or partially separating or removing at least one of the bonded substrates by a process including at least one of chemical treatment, polishing treatment, and ultraviolet irradiation treatment. Manufacturing method. Before performing the step of completely or partially separating or removing at least one of the bonded substrates, the substrate on which the first substrate and the second substrate are bonded is bonded to the third substrate with an adhesive. And the process
A step of separating or removing at least one of the bonded substrates completely or partially, and then peeling the substrate bonded to the first substrate and the second substrate from the third substrate; With
The step of completely or partially separating or removing at least one of the bonded substrates partially separates the substrate opposite to the third substrate from the substrates bonded to the third substrate. It removes. The manufacturing method of the thin film device of Claim 1 characterized by the above-mentioned. Before performing the step of completely or partially separating or removing at least one of the bonded substrates, a protective substrate is bonded to the side of the second substrate opposite to the side where the first substrate is bonded. Process,
Bonding a third substrate to the protective substrate with an adhesive;
After the step of completely or partially separating or removing at least one of the bonded substrates, the bonded substrate is peeled from the third substrate by bonding the first substrate, the second substrate, and the protective substrate. Comprising the steps of:
The step of completely or partially separating or removing at least one of the bonded substrates partially separates the substrate opposite to the third substrate from the substrates bonded to the third substrate. It removes. The manufacturing method of the thin film device of Claim 1 characterized by the above-mentioned. The method for manufacturing a thin film device according to claim 2, wherein the adhesive is provided only at the outer peripheral edge of the substrate. The method for manufacturing a thin film device according to claim 3, wherein the adhesive is provided only at an outer peripheral edge of the substrate. Forming a thin film device layer on the first substrate;
Forming an opening penetrating the second substrate in the thickness direction;
Bonding the first substrate and the second substrate;
A process including at least one of chemical treatment, polishing treatment, and ultraviolet irradiation treatment, and at least one of the bonded substrates is completely or partially separated or removed. A liquid crystal display device using the thin film device. Before performing the step of completely or partially separating or removing at least one of the bonded substrates, the substrate on which the first substrate and the second substrate are bonded is bonded to the third substrate with an adhesive. And the process
A step of separating or removing at least one of the bonded substrates completely or partially, and then peeling the substrate bonded to the first substrate and the second substrate from the third substrate; With
The step of completely or partially separating or removing at least one of the bonded substrates partially separates the substrate opposite to the third substrate from the substrates bonded to the third substrate. The liquid crystal display device according to claim 6, wherein the liquid crystal display device is removed. Before performing the step of completely or partially separating or removing at least one of the bonded substrates, a protective substrate is bonded to the side of the second substrate opposite to the side where the first substrate is bonded. Process,
Bonding a third substrate to the protective substrate with an adhesive;
After the step of completely or partially separating or removing at least one of the bonded substrates, the bonded substrate is peeled from the third substrate by bonding the first substrate, the second substrate, and the protective substrate. Comprising the steps of:
The step of completely or partially separating or removing at least one of the bonded substrates partially separates the substrate opposite to the third substrate from the substrates bonded to the third substrate. The liquid crystal display device according to claim 6, further comprising: removing. The liquid crystal display device according to claim 7, wherein the adhesive is provided only at the outer peripheral edge of the substrate. The liquid crystal display device according to claim 8, wherein the adhesive is provided only at an outer peripheral edge of the substrate. Forming a thin film device layer on the first substrate;
Forming an opening penetrating the second substrate in the thickness direction;
Bonding the first substrate and the second substrate;
A process including at least one of chemical treatment, polishing treatment, and ultraviolet irradiation treatment, and at least one of the bonded substrates is completely or partially separated or removed. An electroluminescence display device using the thin film device. Before performing the step of completely or partially separating or removing at least one of the bonded substrates, the substrate on which the first substrate and the second substrate are bonded is bonded to the third substrate with an adhesive. Process,
A step of separating or removing at least one of the bonded substrates completely or partially, and then peeling the substrate bonded to the first substrate and the second substrate from the third substrate; With
The step of completely or partially separating or removing at least one of the bonded substrates partially separates the substrate opposite to the third substrate from the substrates bonded to the third substrate. It removes. The electroluminescent display apparatus of Claim 11 characterized by the above-mentioned. Before performing the step of completely or partially separating or removing at least one of the bonded substrates, a protective substrate is bonded to the side of the second substrate opposite to the side where the first substrate is bonded. Process,
Bonding a third substrate to the protective substrate with an adhesive;
After the step of completely or partially separating or removing at least one of the bonded substrates, the bonded substrate is peeled from the third substrate by bonding the first substrate, the second substrate, and the protective substrate. Comprising the steps of:
The step of completely or partially separating or removing at least one of the bonded substrates partially separates the substrate opposite to the third substrate from the substrates bonded to the third substrate. The electroluminescence display device according to claim 11, comprising removing the electroluminescence display device. The electroluminescent display device according to claim 12, wherein the adhesive is provided only at the outer peripheral edge of the substrate. The electroluminescent display device according to claim 13, wherein the adhesive is provided only at the outer peripheral edge of the substrate.

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