JP2014216329A - Method of manufacturing chip led - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a chip LED with good mass production efficiency, and a method of manufacturing the same.SOLUTION: A chip LED having a cuboid shape is manufactured by bonding an LED chip on a glass epoxy substrate containing a through hole, and after resin-sealing, performing dicing to divide the substrate into individual LEDs. The resin-sealing is performed under a state in which an opening of the through hole on a surface in a side where the LED chip is mounted is closed by a closing member, so that a face of the through hole which is to be a substrate soldering electrode is exposed outside. The resin-sealing using a silicone resin sheet is performed by heating and curing the silicone resin sheet. A portion of the resin part, formed by heating and curing the silicone resin sheet and contacted with at least the LED chip, is silicone based resin. A sealed structure formed on the glass epoxy substrate has a structure of at least two layers including the resin part, and an upper side surface of the sealed structure forms an upper side surface which is one surface of the cuboid shape of the chip LED.

Description

  The present invention relates to a light emitting diode (LED), and more particularly, to a structure and manufacturing method of a chip LED using a resin sheet.

  Making a white LED using a blue light-emitting element and a yellow phosphor is a very common white LED manufacturing method.

  However, this manufacturing method is hardly used for an LED (hereinafter referred to as a chip LED) assembled on a printed circuit board that has the highest mass production efficiency and can be produced at low cost.

  The chip LED is generally resin-sealed by a method called epoxy resin transfer molding. However, the epoxy resin has a problem that the light output of the LED deteriorates due to discoloration due to the addition of blue light emitting short wavelength light and heat or moisture. Therefore, an epoxy resin is not used so much for the white chip LED. When the resin is slightly discolored, the absorption of short wavelengths increases, the discoloration proceeds at an accelerated rate, and the light output is greatly reduced. The degree of resin discoloration depends on the blue light emission intensity and temperature. The light emission intensity is strong and the color changes from the chip surface at a high temperature.

  On the other hand, silicone resins are most used in white LEDs as resins that are resistant to short wavelengths and are unlikely to cause discoloration. However, silicone resins are disadvantageous in that they are soft and have high gas permeability. In order to compensate for this, phenyl silicone resins and modified silicone resins are often used in white LEDs.

  There is also a proposal for a transfer mold resin made of a silicone resin composition (Patent Document 1), but it is rarely used for chip LEDs due to its high price.

JP 2007-332259 A JP-A-62-112333 JP 2013-23603 A JP 2011-219597 A JP 2009-99784 A Japanese Patent Laid-Open No. 11-251704 JP 2004-186372 A JP 2009-206297 A Japanese Patent Laid-Open No. 10-242513 Japanese Patent Laid-Open No. 11-87784 JP 2008-252119 A JP 2005-251816 A JP 2000-4051 A

Nitto Denko Co., Ltd. “Newly developed“ heat-curable heat-resistant sealing sheet ”for LEDs”-News (2013.02.15) http://www.nitto.co.jp/dpage/484.html Nikkei Electronics 2007/4/9 pp. 32 to 33 “Brightness-enhancing film that contributes to reducing the environmental impact of key devices for reducing power consumption in LCD TVs”

  An object of the present invention is to propose a chip LED with high mass production efficiency and a method for manufacturing the same.

The present invention is
A rectangular parallelepiped manufactured by bonding an LED chip on a glass epoxy substrate in which a plurality of through holes are formed in a predetermined arrangement state, sealing the resin, and dicing the through hole portion into individual LEDs. Shaped chip LED,
The resin sealing is performed in a state where the opening of the through hole on the surface of the glass epoxy substrate on the side where the LED chip is mounted is closed by a closing member, whereby the substrate soldering electrode of the through hole The surface to be exposed to the outside,
The resin sealing is performed by using a silicone resin sheet and heating and curing the silicone resin sheet, and at least a portion of the resin part formed by heating and curing the silicone resin sheet is in contact with the LED chip. A resin,
The sealing structure formed on the glass epoxy substrate consists of a structure of two or more layers including the resin part,
An upper surface of the sealing structure forms an upper surface that is one surface of the rectangular parallelepiped shape of the chip LED. Chip LED
It is.

  According to the present invention, it is possible to provide a chip LED with good mass production efficiency and a manufacturing method thereof.

Schematic of an example of the resin sheet used for this invention. Schematic of the state which bonded the LED chip to the glass epoxy board | substrate. FIG. 3 is a schematic view showing a state in which the LED chip bonded to the glass epoxy substrate as shown in FIG. 2 is resin-sealed using the resin sheet shown in FIG. 1. FIG. 4 is a schematic view of a state in which a resin-sealed one is diced and divided into individual LEDs as shown in FIG. 3. The whole schematic view in the planar view of the state which mounted the resin sheet on the mass production board | substrate which has already bonded LED chip, and was resin-sealed. The perspective schematic diagram of one Example of chip LED of this invention. It represents the Example of the other chip LED of this invention, Comprising: (a) is a side view, (b) is a top view. The side view showing the Example of other chip | tip LED of this invention. Sectional drawing of one Example using the film which put the light shielding material in this invention Sectional drawing of one Example of the polarized light emission LED of this invention In this invention, sectional drawing of one Example which arranged the film containing the ultraviolet absorber

  Embodiments of the present invention will be described below with reference to the accompanying drawings.

  In the chip LED proposed by the present invention, an LED chip is bonded on a glass epoxy substrate in which a plurality of through holes are formed in a predetermined arrangement state, and after sealing with resin, the through hole portions are diced to form individual chips. It is a rectangular parallelepiped chip LED manufactured by being divided into LEDs.

  A manufacturing method of such a chip LED is a method (Patent Document 2) proposed by Stanley Electric Co., Ltd., which is suitable for mass production and has a structure that is inexpensive and easy to downsize. Today, chip LEDs are the type of LED with the highest production.

  In the chip LED of the present invention, the resin sealing is performed in a state where the opening of the through hole on the surface of the glass epoxy substrate on the side where the LED chip is mounted is closed by a closing member. . As a result, the surface of the through hole that becomes the substrate soldering electrode is exposed to the outside.

  In the chip LED of the present invention, the resin sealing is performed by using a silicone resin sheet and heating and curing the silicone resin sheet. The sealing structure formed on the glass epoxy substrate has a structure of two or more layers including a resin portion formed by heating and curing the silicone resin sheet.

  Silicone resin sheets used for resin sealing are conventionally known (for example, Patent Documents 3, 4, and 5, Non-Patent Document 1).

  In the present invention, by performing resin sealing using a silicone resin sheet as described above, when the LED chip 4 is bonded to the glass epoxy substrate 8 by die bonding or wire bonding, the wire 5 is formed by the silicone resin sheet. The entire LED chip 4 can be covered and sealed without crushing (FIGS. 6 and 7).

  In the chip LED of the present invention, since the resin sealing is performed using the silicone resin sheet, the sealing structure formed on the glass epoxy substrate is formed with a uniform thickness. And the surface of the upper side of the sealing structure formed with uniform thickness is a structure which forms the surface of the upper side which is one surface of the rectangular parallelepiped shape of chip LED of this invention.

  In the case of conventional resin sealing with, for example, a liquid resin, the resin at the center portion becomes thin and the resin at the end becomes thick due to the surface tension of the resin, resulting in variations in the thickness of the LED. For this reason, it was difficult to form the sealing structure formed on the glass epoxy substrate with a uniform thickness. That is, a chip in which a sealing structure is formed with a uniform thickness on a glass epoxy substrate, and one surface (upper surface) of a rectangular parallelepiped chip LED formed with a uniform thickness is formed by the sealing structure. It was difficult to mass-produce LEDs at low cost.

  On the other hand, in the chip LED of the present invention, the sealing structure formed on the glass epoxy substrate is formed with a uniform thickness. And the upper surface of the sealing structure formed with a uniform thickness is a structure that forms the upper surface, which is one surface of the rectangular parallelepiped shape of the chip LED of the present invention formed with a uniform thickness. That is, the surface on the upper side of the sealing structure formed on the glass epoxy substrate has a structure also serving as the surface on the upper side of the rectangular parallelepiped chip LED.

  FIG. 1 is a schematic view of an example of a resin sheet used in the present invention. As shown in FIG. 1, a plastic film 1 on which a silicone resin 2 is formed into a semi-cured (B stage) gel and sheet can be used. In order to form the silicone resin 2 in a semi-cured (B stage) gel form on the plastic film 1, a method such as casting or roll coating is used. Thus, the silicone resin 2 is applied on the plastic film 1 to a predetermined film thickness, and is heated and dried.

  The resin sheet shown in FIG. 1 has a structure in which the upper and lower surfaces in FIG. 1 are sandwiched between plastic films 1 and 3. The upper plastic film 3 which is one of the plastic films is peeled off as a release film, and after sealing the LED chip, the other plastic film 1 is peeled off or left after the silicone resin 2 is cured. Good.

  Thus, the chip LED of the present invention is characterized in that a silicone resin sheet is used for resin sealing. The silicone resin sheet can be used in a roll shape, a strip shape, or a label shape.

  In the chip LED of the present invention, at least a portion of the resin portion obtained by heating and curing the silicone resin sheet that is in contact with the LED chip has a structure made of a silicone resin. This eliminates the possibility of problems such as resin discoloration and output deterioration that occur when resin sealing is performed with an epoxy resin.

  That is, according to the present invention, it is possible to reduce light intensity deterioration due to resin discoloration of a short wavelength light emitting LED, and to greatly improve the reliability of the LED.

  Here, examples of the silicone resin include silicone resins, phenyl silicone resins, and modified silicone resins. In the present invention, these are collectively referred to as silicone resins.

  As described above, in the present invention, the sealing resin is a B-stage gel resin that is semi-cured with a silicone resin.

  If necessary, a B-stage (semi-cured) gel obtained by mixing a phosphor or a light diffusing material in advance in a silicone resin can also be used.

  Silicone resin is characterized by being resistant to short-wavelength light, but has a weak point that after resin curing, the gas permeability is higher than that of epoxy resin and it is soft.

  When the gas permeability is high, when a silver material such as silver paste or silver plating is used for the LED, the gas containing sulfur reacts with silver to form silver sulfide and blacken.

  If it is blackened, the LED luminous intensity is lowered, which causes a problem. Further, if the resin is soft, the wire is deformed by mechanical stress when the LED is mounted on the circuit board, resulting in a problem that leads to a failure.

  As a solution to these problems, it is also possible to use phenyl silicone resin or modified silicone resin instead of silicone resin. The phenyl silicone resin and the modified silicone resin have a reduced gas permeability and an increased hardness, and commercially available products provided by resin manufacturers can be used.

  The manufacture of the chip LED of the present invention is performed as follows.

  The LED chip 4 is bonded by die bonding and wire bonding on the glass epoxy substrate 8 on which a plurality of through holes are formed in a predetermined arrangement (FIG. 2).

  Thereafter, the upper plastic film 3 of the silicone resin sheet illustrated in FIG. 1 is peeled off, and the silicone resin sheet is placed thereon. Here, the resin is sealed by applying an appropriate press, vacuum, and temperature, and the silicone resin is cured by placing in a thermostatic bath (FIG. 3).

  Thereafter, as shown in FIG. 4, the through-hole portion is diced and divided into individual LEDs, and the chip LED of the present invention shown in FIGS. 6 and 7 is completed.

  In the chip LED of the present invention thus manufactured, when the resin-encapsulated glass epoxy substrate 8 is diced, the sealing structure 9 includes a resin portion in which the silicone resin sheet is heated and cured (see FIG. 3 and FIG. 4) are diced together with the glass epoxy substrate 8.

  Therefore, in the chip LED of the present invention, the surface on the upper side of the sealing structure formed on the glass epoxy substrate 8 indicated by reference numeral 9 in FIGS. 6 and 7 is one surface of the rectangular parallelepiped shape of the chip LED. A certain upper side surface is formed (FIGS. 6 and 7). That is, the upper surface of the sealing structure 9 formed on the glass epoxy substrate 8 has a structure also serving as the upper surface of the rectangular parallelepiped chip LED (FIGS. 6 and 7).

  In the present invention, as described above, the resin sealing is performed using the silicone resin sheet. However, the silicone resin has a small stress after curing. For this reason, the curvature of a board | substrate becomes small compared with the case where LED is manufactured by the conventional transfer mold. That is, according to the method of manufacturing the chip LED of the present invention, the resin is sealed using a silicone resin sheet, so that the warpage of the substrate is 1 as compared with the case of manufacturing the LED by an epoxy resin transfer mold. / 10 or less. Thus, according to the method of manufacturing the chip LED of the present invention, it becomes possible to easily perform resin sealing of a large area and increase the mass production efficiency. In the case of an epoxy resin transfer mold, the warpage of the substrate is large, and it is necessary to forcibly flatten the substrate during dicing. For this reason, there is a limitation that the size of the glass epoxy substrate in which the plurality of through holes are formed in a predetermined arrangement state and the area of the resin mold portion cannot be increased, and the mass production efficiency is deteriorated.

  On the other hand, the present invention uses a silicone resin sheet and the warpage of the substrate is reduced, so that the substrate size can be increased and the mass production effect is greatly improved.

  According to the method of manufacturing the chip LED of the present invention, as described above, the opening of the through hole on the surface of the glass epoxy substrate 8 on the side where the LED chip 4 is mounted is closed by the closing member 7. Thus, resin sealing using a silicone resin sheet is performed. Thus, the chip LED of the present invention has a structure in which the surface (through-hole surface 6 (FIG. 6)) serving as a substrate soldering electrode of the through-hole is exposed to the outside.

  The through-hole part is used as an external electrode of the chip LED and plays an important role as a soldering part. If the resin enters the through-hole part during resin sealing, the resin spreads to the back surface of the substrate in some cases, which causes a problem that it is difficult to solder the finished chip LED product.

  In order to prevent this, it has been conventionally proposed to perform resin sealing in a state where the opening portion of the through hole on the surface on the side where the LED chip of the glass epoxy substrate is mounted is closed with a closing member such as a solder resist. (Patent Documents 6, 7, and 8).

  Even in the method of the present invention for manufacturing the chip LED of the present invention, when trying to seal the LED chip 4 using a resin sheet, if the wire bond wire 5 is to be sealed without being crushed, the through hole portion There is a risk that the resin will get into. In some cases, the resin spreads to the back surface of the substrate, which causes a problem that it is difficult to solder the finished chip LED product.

  In the chip LED of the present invention by the manufacturing method of the present invention, as described above, the opening of the through hole on the surface of the glass epoxy substrate 8 on the side where the LED chip 4 is mounted is closed by the closing member 7. Thus, resin sealing using a silicone resin sheet is performed. That is, as shown in FIG. 6, the through-hole portion is previously covered with a closing member 7 such as a solder resist to prevent the resin from entering the through-hole. Therefore, the through-hole surface 6 (FIG. 6) has a structure in which resin does not flow and is exposed to the outside. Thereby, it can be used as a good soldering electrode.

  It is convenient to use a photosensitive solder resist film as the solder resist. In addition, as a method of closing the opening of the through hole with the closing member 7, a method of leaving a coverlay film or a copper foil pattern can also be employed.

  In the chip LED of the present invention according to the manufacturing method of the present invention described above, a mold necessary for transfer molding becomes unnecessary. The mold is expensive and takes a long time to make, but according to the present invention, the mold is unnecessary. Moreover, in the chip LED of the present invention by the manufacturing method of the present invention, it is sufficient to use a silicone resin sheet cut to a desired size, so that the LED dimensions can be easily changed, inexpensively, and manufactured without taking time. It becomes possible.

  As described above, in the resin sheet shown in FIG. 1, the upper plastic film 3 is used as a release film and is peeled off. After sealing the LED chip, the other plastic film 1 is peeled off, or the silicone resin 2 is used. The structure remains after curing.

  The plastic film left after the silicone resin 2 is cured becomes a film layer indicated by reference numeral 11 in FIGS.

  If the film layer denoted by reference numeral 11 in FIG. 8 or the like is present on the surface of the chip LED, the problem of high hardness and gas permeability that are weak points of the silicone resin can be improved.

  There are a wide variety of plastic materials that can be selected as the plastic film that remains after the silicone resin 2 is cured, and it may be selected according to the role that it wants to play.

  For example, preferable characteristics as a plastic film material for forming a film layer include (1) transparency and good light transmittance, (2) hardness, (3) good weather resistance, that is, high resistance to ultraviolet rays, ( 4) Low gas permeability, (5) Good heat resistance, etc.

  Further, the performance desired to be given to the film layer includes (1) imparting hardness, (2) lowering gas permeability, (3) cutting light transmittance, (4) light diffusion, (5) Examples thereof include :) having polarization characteristics, (6) cutting ultraviolet rays, and the like.

  Therefore, for example, polyester (PET), triacetyl cellulose (TAC), polyvinyl alcohol (PVA), polyethylene (PE), polystyrene (PS), polypropylene (PP), polyvinyl chloride (PVC), cellulose nitrate (CA), Not only polycarbonate (PC), polymethyl methacrylate (PMMA), etc., various plastic film materials can be used.

  In addition, an acrylic film material (PMMA), a PET film material, etc. are preferable from the viewpoint mentioned above.

  In addition, it is possible to compensate for the disadvantages of individual materials by using composite films of different materials.

  Any single layer or multiple layers or combinations of these layers can be employed.

  What kind of material is used may be determined according to the performance to be provided.

  It may be a single layer or multiple layers made of the various materials described above, or a composite film laminated with different materials.

  The film thickness is not particularly limited to 10 μm to 500 μm, but it is preferable to use a film having a thickness of 10 μm to 50 μm per layer in consideration of the case of multiple layers.

  In the chip LED of the present invention, various structures exemplified below can be adopted as the structure of the resin part indicated by reference numeral 10 in FIGS. 7 to 11 and formed by heating and curing the silicone resin sheet.

  The resin part is a resin layer part composed of two or more layers, and the layer close to the LED chip is a layer containing a phosphor, and a layer not containing the phosphor is present on the layer, or the LED A structure in which the layer near the chip is a layer that does not contain a phosphor, and a layer that contains a phosphor exists on the layer.

  The resin part is a resin layer part composed of two or more layers, and the layer close to the LED chip is a layer containing a yellow or green phosphor, on which a layer containing a red phosphor exists. Structure.

  The resin part is a resin layer part composed of two or more layers, and the layer close to the LED chip is a layer made of dimethyl silicone resin, and further, a layer made of phenyl silicone resin or a modified silicone resin A structure in which a layer exists.

  As the structure of the resin portion indicated by reference numeral 10 in FIGS. 7 to 11 and having a silicone resin sheet heated and cured, a silicone-based single layer structure or a multilayer structure can be employed. Moreover, the thing containing a fluorescent substance, the thing which does not contain a fluorescent substance, the thing containing a light-diffusion material, the thing which does not contain a light-diffusion material, etc. are employable.

  In the above, yellow, green, red, etc. can be adopted as the phosphor.

  These can be used in a single layer or in a multilayer structure.

  Moreover, it can employ | adopt including the multilayer thing which combined various layers from the silicone type resin to the layer containing fluorescent substance, and selects as needed.

  In the chip LED of the present invention, the sealing structure 9 formed on the glass epoxy substrate 8 includes the resin part formed by heating and curing the silicone resin sheet, and the silicone formed on the resin part. It can be set as the structure containing the film layer which consists of a film from which a composition differs from type | system | group resin. For example, as described above, this film layer is a film layer formed by the plastic film 1 remaining after the silicone resin 2 is cured in the resin sheet shown in FIG.

  In this case, as described above, the film layer serving as the upper layer (second layer) indicated by reference numeral 11 in FIG. 8 and the like is polyester (PET), triacetyl cellulose (TAC), polyvinyl alcohol (PVA). ), Single layer made of polyethylene, polystyrene, polyethylene, polypropylene, polyvinyl chloride, cellulose nitrate, polycarbonate, or polymethylmethacrylate, or a plurality of layers made of any of the above are laminated. Can be structured.

  A single layer, a multilayer, or a combination of the above-described various materials is used.

  In addition, as described above, in the case of a structure including a film layer, a structure in which a film layer containing a light-shielding substance is present in the plurality of film layers.

  That is, in the film layer (FIGS. 9, 10, and 11) that is the upper layer (second layer) indicated by reference numeral 11, a material that cuts a part of light such as carbon black in advance as shown in FIG. It can be made into the structure which contains (light-shielding substance). By increasing the number of film layers containing this light-shielding substance, the amount of light cut can be easily adjusted.

Furthermore, as described above, in the case of a structure having a film layer, in the film layer present in a plurality of layers,
Polarizing plate layer,
A layer combining a brightness enhancement film layer and a polarizing plate layer,
A structure in which any of a combination of a light diffusion layer, a brightness enhancement film layer, and a polarizing plate layer exists can be provided.

  Or the layer close | similar to the said LED chip in the said film layer which exists in multiple layers can be made into the structure which is the layer to which the ultraviolet absorber which absorbs near-ultraviolet rays and ultraviolet rays of 430 nm or less is added. .

  Moreover, it can also be set as the structure where the light-diffusion layer is contained in the said film layer which exists in multiple layers.

  FIG. 9 illustrates an example in which a film 12 that can cut a desired light amount is included in an upper layer (second layer) indicated by reference numeral 11. The film 12 capable of cutting a desired light quantity is a film containing a substance that cuts the light quantity, such as carbon black. By adjusting the content of a substance that cuts off the amount of light (light-shielding substance), for example, by laminating several layers of a film that cuts the amount of light by 5%, a film that cuts the amount of light by 10%, etc. % (Multi-layer) film that cuts 10%, multi-layer (laminated) film that cuts 10% of light, and multi-layer (laminated) film that cuts 14.5% of light.

  It is optimal for in-vehicle LEDs that are used with reduced brightness. In addition, since the amount of light to be cut is known in advance, even with LED chips having different luminosities, the luminosity can be adjusted according to the cut amount, and an LED having a desired luminosity can be produced, resulting in improved production efficiency.

  Further, when carbon black is used, the surface electrical resistance of the film is lowered, and troubles such as damage caused by static electricity of the LED and adhesion due to static electricity in the process can be improved.

  FIG. 10 illustrates an example in which a polarizing plate layer 16 is included in a film layer serving as an upper layer (second layer) indicated by reference numeral 11. By doing in this way, the chip LED of the present invention can be a polarized LED that emits polarized light.

  When a polarized LED is used as a light source for a liquid crystal backlight, it is possible to reduce the number of polarizing plates on the liquid crystal side by combining two polarizing plates on the liquid crystal side, or in some cases.

  In FIG. 10, the polarizing plate layer 16, the light diffusion layer 14, and the brightness enhancement film layer 15 are laminated film layers.

  The diffusion layer 14 is for making the LED surface light intensity distribution of light emitted from the LED chip 4 as uniform as possible.

  The brightness enhancement film layer 15 transmits necessary P waves and reflects S waves as shown in the following reference. The reflected S wave is irregularly reflected by the diffusion layer 14, part of it is transmitted as a P wave, the S wave is reflected, and the diffused layer 14 is irregularly reflected, and the P wave is repeatedly generated in the LED. It can be set as highly efficient polarized LED. In addition, the mechanism by which the P wave is transmitted by the brightness enhancement film layer 15 and the S wave is reflected and the recycling is performed as described above is known (reference document: Non-patent document 2).

  The basics of the brightness enhancement film layer 15 utilize the Brewster angle.

  In the case of the chip LED having the structure as shown in FIG. 10, the polarization direction of the completed LED is the polarization direction of the polarizing plate, and can be set to a desired direction by the way of bonding.

  Polarized LEDs can be applied not only to light sources of liquid crystal backlights, but also to various types of polarized LEDs in industrial and medical fields.

  FIG. 11 illustrates an example in which a film layer 17 to which an ultraviolet absorber that absorbs ultraviolet rays is added is included in the upper layer (second layer) indicated by reference numeral 11.

  The film layers having the various structures described above are different from the structures of the plastic film 1 in which the silicone resin 2 is deposited on the upper side in FIG. 1 when preparing the silicone resin sheet shown in FIG. This can be realized by using a film layer.

  A resin part 10 formed by heating and curing a silicone resin such as silicone resin, phenyl silicone resin, and modified silicone resin in the resin sealing step, and an upper layer (second layer) indicated by reference numeral 11 When the adhesive strength with the film layer is not sufficient, as shown in FIGS. 9 and 10, the contact surface can be primed or the adhesive strength can be enhanced by interposing the adhesive layer 18 or the like. .

  Even when the adhesive layer 18 or the like is interposed, such a structure may be prepared between the silicone resin 2 and the plastic film 1 when preparing the silicone resin sheet shown in FIG.

  As described above, according to the present invention, it is possible to provide a chip LED having a structure utilizing the characteristics of various resin sheets and a method for manufacturing the same.

  According to the structure of the resin part employed in the above-described chip LED of the present invention, the resin layer containing the phosphor is increased in thickness by two layers, three layers, and the mixed color of the blue light emission and the fluorescence of the phosphor. Can be fine-tuned.

  Further, by combining a resin layer containing a phosphor with two or three layers of different fluorescent colors, LEDs of various emission colors can be realized.

  Furthermore, by adopting a structure in which a resin part and a film layer are laminated, and by including a light shielding material such as carbon graphite in the plastic film layer, a light emission output is cut by a certain amount, and an LED having a desired brightness is obtained. It becomes possible.

  Moreover, LED which enabled polarized light emission is realizable by employ | adopting the structure where the polarizing film layer is contained in the film layer.

  Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

  In the chip LED of the present invention, as is conventionally known, the LED chip 4 is bonded on the glass epoxy substrate 8 in which a plurality of through holes are formed in a predetermined arrangement state, and after sealing with resin, Is a rectangular parallelepiped chip LED manufactured by dicing the LED into individual LEDs.

  Here, in the chip LED of the present invention, the through hole is formed by resin sealing in a state where the opening of the through hole on the surface of the glass epoxy substrate 8 on the side where the LED chip 4 is mounted is closed by the closing member. The surface 6 which becomes a board soldering electrode is exposed to the outside.

  Further, in the chip LED of the present invention, resin sealing is performed by using the silicone resin sheet illustrated in FIG. 1 and heating and curing the silicone resin sheet.

  And the sealing structure 9 (FIG. 6, FIG. 6, figure) which the part which contacts the LED chip 4 of the resin part by which the said silicone resin sheet is heated and hardened consists of silicone resin, and is formed on the glass epoxy board | substrate 8 is shown. 7) has a structure of two or more layers including the resin portion.

  Furthermore, in the chip LED of the present invention, the sealing structure formed on the glass epoxy substrate 8 indicated by reference numeral 9 in FIGS. 6 and 7 is formed with a uniform thickness. And the upper surface of the sealing structure 9 formed with a uniform thickness has a structure in which an upper surface, which is one surface of the rectangular parallelepiped shape of the chip LED, is formed. That is, the surface on the upper side of the sealing structure 9 formed with a uniform thickness forms a surface on the upper side which is one surface of the rectangular parallelepiped shape of the chip LED of the present invention formed with a uniform thickness. Yes. In this way, a chip LED having a structure in which the upper surface of the sealing structure 9 formed on the glass epoxy substrate 8 also serves as the upper surface of the rectangular parallelepiped chip LED (FIGS. 6 and 7). ).

  In this embodiment, the manufacturing method of the chip LED of the present invention and the characteristic part of the present invention described above in the chip LED of the present invention will be mainly described.

  There are 1608 type and 2012 type as standard sizes of chip LED. In this embodiment, the 2012 type was adopted.

  The 2012 type has a size of 1.25 mm x 2.0 mm.

  FIG. 6 is a schematic perspective view of the chip LED of the present invention manufactured in this example.

  Since the embodiment shown in FIG. 6 is an example in which one LED chip is mounted, there are a pair of through-holes serving as electrodes, but the number of through-holes naturally increases as the number of LED chips mounted increases.

  FIG. 5 is an overall schematic view in plan view of a state in which a resin sheet is placed on a mass-produced substrate on which the LED chip is bonded and resin-sealed in the process of the present invention for manufacturing the LED chip of the present invention illustrated in FIG. is there. In FIG. 5, 4800 (60 × 80) substrates 20 are obtained.

  In this embodiment, the width of the blade when dicing is about 50 μm, the size of the LED mounting portion 21 is 1.30 × 60 = 78 mm in length, 2.05 × 80 = 164 mm in width, and the size of the resin sheet 22 is 82 mm × 168 mm. The substrate size is 86 mm × 172 mm.

  The size indicated by reference numeral 23 in FIG. 6 is the size of the chip LED of the present invention to be manufactured.

  The size of the substrate 20 is naturally changed depending on the size and the number of chip LEDs to be manufactured.

  FIG. 2 is a schematic view showing a state in which the LED chip 4 is bonded to the glass epoxy substrate 8 by die bonding or wire bonding. A blue light emitting chip was used as the LED chip 4 and wire bonding was performed using a gold wire.

  In addition, the opening part of the through hole in the surface at the side where the LED chip 4 of the glass epoxy board | substrate 8 is mounted was closed with the closing member before resin sealing mentioned later. Here, the solder resist 7 covered the opening of the through hole on the surface of the glass epoxy substrate 8 on the side where the LED chip 4 is mounted.

  As the solder resist 7, a photosensitive solder resist film was used.

  The solder resist 7 serves to prevent the resin from entering the through-hole portion in the subsequent resin sealing step and to prevent the solder from entering the resin when the chip LED is soldered.

  As shown in FIG. 1, the resin sheet used in this example is a sheet of dimethyl silicone resin 2 formed on a plastic film 1 in a semi-cured (B-stage) gel form. It is. The upper and lower surfaces in FIG. 1 are sandwiched between plastic films 1 and 3. The upper plastic film 3 which is one of the plastic films is peeled off and used as a release film.

  As will be described later, the resin portion formed by heating and curing the dimethyl silicone resin 2 in the resin sealing step needs to cover the LED chip 4 and the wire 5 as shown in FIGS. Therefore, when preparing the resin sheet shown in FIG. 1, the thickness of the dimethyl silicone resin 2 layer was set in consideration of making it larger than the thickness of the LED chip 4 + the height of the wire 5. In this example, since the height of the blue light emitting chip (LED chip 4) was about 100 μm and the height of the gold wire was about 50 μm, the thickness of the dimethyl silicone resin 2 layer was set to 200 μm.

  The resin sheet shown in FIG. 1 was cut and prepared to be larger than the size of the LED mounting portion described above and smaller than the size of the glass epoxy substrate 8.

  The glass epoxy substrate on which the LED chip 4 is bonded to the surface of the dimethyl silicone resin 2 from which the plastic film 3 has been peeled off using a jig (not shown) by peeling off the plastic film 3 of the resin sheet thus prepared. Adjusted to 8. Then, under reduced pressure, it heated at 160 degreeC for 5 minute (s), and was crimped | bonded by 0.2 MPa.

  Then, it put into a 150 degreeC thermostat for 5 hours, the dimethyl silicone resin 2 was hardened completely, and the resin part was formed.

  After curing, it was stretched on a blue sheet and diced vertically and horizontally to obtain the chip LED of the present invention shown in FIG.

  In the embodiment described above, the resin portion was formed from the dimethyl silicone resin 2. Dimethyl silicone remains tacky even after curing. For this reason, when the resin part is formed with only one layer of dimethyl silicone resin 2, the divided LEDs are stuck to each other, causing problems in the electrical test process and taping process. May occur. In addition, since it is soft even after curing, there is a tendency that when it is mounted on a circuit board, the wire deforms and breaks when the mounter picks and places.

  In the chip LED of this embodiment, the plastic film 1 (FIG. 1) is a non-peelable plastic film, and the sealing structure 9 formed on the glass epoxy substrate 8 is a resin formed from the dimethyl silicone resin 2. Part and a film layer made of plastic film 1 (FIG. 1) (FIGS. 3 and 4). Therefore, the above-described problem that may occur when the resin portion is formed of only one layer of dimethyl silicone resin 2 does not occur.

  The chip LED of the present invention shown in FIG. 7 also includes a resin structure in which the sealing structure formed on the glass epoxy substrate 8 includes a resin portion in which a silicone resin in a silicone resin sheet is heated and cured in a sealing process. It is possible to prevent the above-described problems that may occur when the resin part is formed of a single layer of dimethylsilicone resin with a structure having a layer or more.

  In the chip LED of the present invention shown in FIG. 7, in the manufacturing process of the chip LED of the present invention in the embodiment described above, the layer of dimethyl silicone resin 2 is made of phenyl silicone resin or modified silicone resin with the resin sheet shown in FIG. A layer and a dimethyl silicone resin layer laminated thereon are formed in two layers (not shown). In the example shown in FIG. 7, the plastic film 1 is also a release film. In this case, in the embodiment described above, the plastic film 1 is peeled before heating and pressure bonding under reduced pressure in the resin sealing step.

  Except for these points, the resin portion layer formed by heating and curing the dimethyl silicone resin indicated by reference numeral 10 in the resin sealing step as shown in FIG. A two-layer sealing structure consisting of a resin part layer formed by heating and curing a phenyl silicone resin or a modified silicone resin in a resin sealing step, which is laminated thereon 9 was formed on the glass epoxy substrate 8.

  With such a structure, since the phenyl silicone resin and the modified silicone resin are hard and non-tacky, the above-described problems that may occur when the resin portion is formed with a single layer of dimethyl silicone resin are generated. Can be prevented.

  In FIG. 7, the sealing structure 9 is not formed including the film layer made of the plastic film 1 (FIG. 1) illustrated in FIGS. 3 and 4, but the plastic film 1 (FIG. 1). Can be formed as a non-peelable plastic film, and a sealing structure in which a film layer made of the plastic film 1 (FIG. 1) is laminated on the upper layer indicated by reference numeral 11 can be obtained.

  In this way, the plastic sheet 1 is placed as a non-peelable plastic film in the resin sheet shown in FIG. 1, and the upper second layer indicated by reference numeral 1 in FIG. 4 and indicated by reference numeral 11 in FIG. Even if it forms, it can prevent generation | occurrence | production of the malfunction mentioned above which may arise when forming the resin part formed by being heated and hardened in the resin sealing process by one layer of dimethyl silicone resin.

  When the upper second layer indicated by reference numeral 1 in FIG. 4 and indicated by reference numeral 11 in FIG. 7 is formed of a plastic film, the properties required of the plastic film are transparent, strong against short wavelengths, and have hardness. It will be. An acrylic film, a PET film, etc. are suitable as what has such a characteristic.

  Moreover, even if it is a film which cannot fully satisfy the characteristic mentioned above, the characteristic mentioned above can be exhibited and used by a combination and a process.

  For example, as shown in FIG. 11, a layer 17 containing an ultraviolet absorber can be provided inside a layer made of a plastic film (side closer to the LED chip). This makes it possible to solve the problem of film material deterioration due to short wavelengths.

  In this case, the blue light-emitting element has InGaN as the light-emitting layer, but even if there is light emission of GaN with a shorter wavelength, it is 400 nm to 430 nm, so an ultraviolet absorber that absorbs a short wavelength of 400 nm to 430 nm or less should be used. That's fine.

  The chip LED of the present invention shown in FIG. 9 is indicated by a resin portion layer indicated by reference numeral 10 formed by heating and curing a silicone resin in a resin sealing step, and indicated by reference numeral 11 formed thereon. In this example, the second layer is a film layer made of a plastic film, and an adhesive layer 18 is formed between the two in order to improve the adhesive force between them.

  In addition, a primer process can also be performed in order to improve adhesive force.

  In the resin sheet shown in FIG. 1, except that the layer of dimethyl silicone resin 2 is changed to a layer in which phosphor NYAG-02 (manufactured by Intematex) is mixed with silicone resin OE-6520 (manufactured by Toray Dow Corning). The chip LED of the present invention was manufactured in the same manner as in Example 1.

  A side view of the chip LED produced in this example is shown in FIG.

  The upper second layer indicated by reference numeral 11 in FIG. 8 is formed of a plastic film.

  In the chip LED shown in FIG. 8, the resin portion 10 formed by heating and curing the silicone-based resin (OE-6520) in the resin sealing process has five layers 10a, 10b, 10c, 10d, and 10e. It is formed by stacking.

  Each of the five layers includes or does not include a predetermined amount of phosphor (NYAG-02).

  Thereby, the dispersion | variation in the light emission wavelength of LED chip 4 can be suppressed with the resin sheet from which the quantity of fluorescent substance differs.

  In the present invention, the emission color of the LED is adjusted by the emission wavelength of the LED chip 4 and the amount of phosphor. When making a resin sheet containing a certain amount of phosphor by mixing phosphor with silicone resin, mass production effect is not achieved unless a considerable amount is made. As shown in FIG. 8, the reason why a plurality of layers including or not including a predetermined amount of phosphor (NYAG-02) is laminated is to cope with this problem.

  In addition, when a layer without a phosphor is included, the basis for which one is brought closer to the LED chip 4 may be either. However, when the phosphorless layer is brought closer to the LED chip 4, blue light emission leaks from the LED side surface. If this is a concern, the phosphor-containing layer 10a may be positioned closer to the LED chip 4.

  Many white LEDs using a phosphor that is excited by blue light emission in a sealing resin of a blue light-emitting chip are conventionally known. Typical phosphors are yellow YAG (Nichia Chemical), green is sialon-based aronbright (Electrochemical Industry), red CASN (Mitsubishi Chemical), etc. ing.

  There are many phosphors on the market today, and most colors can be realized as LEDs combined with blue light emitting chips (Patent Documents 9, 10, 11, 12, 13).

  The phosphor employed in the five layers 10a, 10b, 10c, 10d, and 10e containing or not containing the predetermined amount of phosphor is, for example, a yellow phosphor of YAG, and color rendering properties. In order to make a good white LED, a structure in which a layer 10d in which a CASN red phosphor is added to a one-layer silicone resin is further added can be used. In this case, the resin layer 10 can be made into a total of four layers. Of course, a white LED with high color rendering can be realized by using a green phosphor of sialon instead of a yellow phosphor of YAG and combining it with a red phosphor of CASN.

  Further, when it is desired to add a diffusing material such as silica, the layer 10e in which silica is added to the layer without phosphor may be further increased. In this case, the resin layer 10 has a total of five layers, and naturally the LED becomes thicker accordingly.

  It is reasonable to make resin sheets with different amounts of phosphors by stacking several layers containing a predetermined amount of phosphors. In the gel-like resin, the phosphor does not precipitate, so there is no particular problem even if several layers are stacked.

  As described in Example 1, since the height of the blue light emitting chip (LED chip 4) was about 100 μm and the height of the gold wire was about 50 μm, the thickness of the dimethyl silicone resin 2 layer was set to 200 μm. did. In the resin sheet shown in FIG. 1, it is sufficient that the thickness of the layer of the silicone resin (OE-6520) represented by reference numeral 2 is 200 μm.

  If two types of resin layers having different amounts of phosphors are prepared, for example, a layer having a phosphor content of 5% and a phosphor content of 30% is prepared, a total of three layers of 30%, 35%, and 40% A three-layer 600 μm resin sheet with different amounts of the three types of phosphors can be obtained.

  In the case of 30%, there is one phosphor layer, and the remaining two layers are layers without phosphor. For 35%, the thickness may be the same for a total of three layers, such as two layers of phosphors of 30% and 5%, and the remaining one layer without phosphors.

  That is, a resin sheet having three layers of 600 μm with a content of phosphor of 30% is composed of one layer with a content of phosphor of 30% (200 μm) and two layers with a content of phosphor of 0% (200 μm). It is formed.

  The resin sheet of 3 layers and 600 μm with the amount of contained phosphor is 35%, the layer with the amount of contained phosphor is 30% (200 μm), the layer with the amount of contained phosphor is 5% (200 μm), the amount of contained phosphor is 0 % Layer (200 μm).

  A resin sheet having three layers of 600 μm with a phosphor content of 40% is formed of two layers with a phosphor content of 30% (200 μm) and two layers with a phosphor content of 5% (200 μm).

  The embodiments and examples of the present invention have been described with reference to the accompanying drawings. However, the present invention is not limited to the embodiments and examples, and is understood from the description of the claims. Various changes can be made in the range.

1 Plastic film 2 Silicone resin 3 Plastic film (release film)
4 LED chip 5 Wire 6 Through-hole surface 7 Closing member 8 Glass epoxy substrate 9 Sealing structure 10 Resin layer 11 Upper layer (second layer)
DESCRIPTION OF SYMBOLS 12 Film 14 which can cut off desired light quantity Light-diffusion layer 15 Brightness increase film layer 16 Polarizing plate layer 17 Film layer 18 which the ultraviolet absorber which absorbs ultraviolet rays is added Adhesive layer

The present invention is
A rectangular parallelepiped manufactured by bonding an LED chip on a glass epoxy substrate in which a plurality of through holes are formed in a predetermined arrangement state, sealing the resin, and dicing the through hole portion into individual LEDs. A method of manufacturing a chip LED having a shape, comprising the following steps.
(1) A step of closing an opening of the through hole on the surface of the glass epoxy substrate on the side where the LED chip is mounted before the resin sealing.
(2) A resin sheet having a laminated structure in which at least one layer is laminated on a layer made of a silicone resin, and the resin sheet is placed on the glass epoxy substrate to which the LED chip is bonded. A portion having a sealing structure of two or more layers corresponding to the laminated structure of the resin sheets by heating and curing the resin sheet after mounting the layers in contact with each other and contacting the LED chip A resin sealing step of forming a sealing structure formed by a layer made of the silicone resin on the glass epoxy substrate.
Such a chip LED manufactured according to the present invention is:
A rectangular parallelepiped manufactured by bonding an LED chip on a glass epoxy substrate in which a plurality of through holes are formed in a predetermined arrangement state, sealing the resin, and dicing the through hole portion into individual LEDs. Shaped chip LED,
The resin sealing is performed in a state where the opening of the through hole on the surface of the glass epoxy substrate on the side where the LED chip is mounted is closed by a closing member, whereby the substrate soldering electrode of the through hole The surface to be exposed to the outside,
The resin sealing is performed by using a silicone resin sheet and heating and curing the silicone resin sheet, and at least a portion of the resin part formed by heating and curing the silicone resin sheet is in contact with the LED chip. A resin,
The sealing structure formed on the glass epoxy substrate consists of a structure of two or more layers including the resin part,
An upper surface of the sealing structure forms an upper surface that is one surface of the rectangular parallelepiped shape of the chip LED. Chip LED
It is.

The present invention is
A rectangular parallelepiped manufactured by bonding an LED chip on a glass epoxy substrate in which a plurality of through holes are formed in a predetermined arrangement state, sealing the resin, and dicing the through hole portion into individual LEDs. A method for manufacturing a chip LED, which is a method for manufacturing a chip LED having a shape, comprising the following steps.
(1) A step of closing an opening of the through hole on the surface of the glass epoxy substrate on the side where the LED chip is mounted before the resin sealing.
(2) Polyester (PET), triacetyl cellulose (TAC), polyvinyl alcohol (PVA), polyethylene, polystyrene, polyethylene, polypropylene, polyvinyl chloride, cellulose nitrate, polycarbonate, polymethylmeta on the layer made of silicone resin single layer made of any of a Akureto, or the layer made of any of a, which are stacked, or at least one layer is laminated, including a full Irumu layer of different composition film and the silicone resin The resin sheet is mounted on the glass epoxy substrate to which the LED chip is bonded by contacting the layer made of the silicone resin, and then the resin sheet is heated. The resin sheet is laminated by curing The sealing structure has two or more layers corresponding to the structure, and a portion in contact with the LED chip is formed by the layer made of the silicone resin, and the film layer is formed on the layer made of the silicone resin. A resin sealing step of forming a sealing structure including the glass epoxy substrate on the glass epoxy substrate.

Claims (10)

A rectangular parallelepiped manufactured by bonding an LED chip on a glass epoxy substrate in which a plurality of through holes are formed in a predetermined arrangement state, sealing the resin, and dicing the through hole portion into individual LEDs. Shaped chip LED,
The resin sealing is performed in a state where the opening of the through hole on the surface of the glass epoxy substrate on the side where the LED chip is mounted is closed by a closing member, whereby the substrate soldering electrode of the through hole The surface to be exposed to the outside,
The resin sealing is performed by using a silicone resin sheet and heating and curing the silicone resin sheet, and at least a portion of the resin part formed by heating and curing the silicone resin sheet is in contact with the LED chip. A resin,
The sealing structure formed on the glass epoxy substrate consists of a structure of two or more layers including the resin part,
A chip LED in which an upper surface of the sealing structure forms an upper surface which is one surface of the rectangular parallelepiped shape of the chip LED. The resin part is a resin layer part composed of two or more layers, and the layer close to the LED chip is a layer containing a phosphor, and there is a layer not containing the phosphor, or 2. The chip LED according to claim 1, wherein the layer close to the LED chip is a layer that does not contain a phosphor, and a layer containing the phosphor is present thereon. The resin part is a resin layer part composed of two or more layers, and a layer close to the LED chip is a layer containing a yellow or green phosphor, and a layer containing a red phosphor is present thereon. The chip LED according to claim 1, wherein: The resin part is a resin layer part composed of two or more layers, and the layer close to the LED chip is a layer made of dimethyl silicone resin, on which a layer made of phenyl silicone resin, or a modified silicone resin The chip LED according to claim 1, wherein a layer is formed. The sealing structure includes the resin part and a film layer formed on the resin part and made of a film having a composition different from that of the silicone-based resin. Chip LED as described in any one. The film layer is any one of polyester (PET), triacetyl cellulose (TAC), polyvinyl alcohol (PVA), polyethylene, polystyrene, polyethylene, polypropylene, polyvinyl chloride, cellulose nitrate, polycarbonate, and polymethyl metaacrylate. 6. The chip LED according to claim 5, wherein a single layer made of or a plurality of layers made of any of the above is laminated. The chip LED according to claim 6, wherein a film layer containing a light-shielding substance is present in the plurality of film layers. In the film layer present in multiple layers,
Polarizing plate layer,
A layer combining a brightness enhancement film layer and a polarizing plate layer,
The chip LED according to claim 6, wherein any one of a combination of a light diffusion layer, a brightness enhancement film layer, and a polarizing plate layer is present. The layer close to the LED chip among the film layers present in a plurality of layers is a layer to which an ultraviolet absorber that absorbs near-ultraviolet rays and ultraviolet rays of 430 nm or less is added. Chip LED. The chip LED according to any one of claims 6 to 9, wherein a light diffusion layer is included in the plurality of film layers.