JPH11154550A - connector - Google Patents

Abstract

(57) Abstract: Provided is a connector having a plurality of conductive portions capable of connecting fine electrodes of electronic components or the like and an insulating portion for mutually insulating the conductive portions. SOLUTION: It has a plurality of conductive portions for electrically connecting one surface and the other surface, and an insulating portion for insulating these conductive portions from each other. A connector comprising conductive particles, wherein the polymer substance is a radiation-sensitive resin material.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a connector having a plurality of conductive portions and an insulating portion for mutually insulating the conductive portions.

[0002]

2. Description of the Related Art In recent years, the number of electrodes in a semiconductor device has been increased due to its higher function and higher capacity. Tend to decrease the center-to-center distance and increase the density. Therefore, as a semiconductor element, BG
Semiconductor devices, such as A type, CSP type, and FC type, having electrodes formed on the surface according to lattice point arrangement have been used. In many of these semiconductor devices, a connection protruding electrode (solder bump) made of solder is formed on a pad electrode formed on the surface.

However, when such a semiconductor element is connected or mounted on a circuit board or the like, there are the following problems. (1) The shape and dimensions of the solder bumps of the semiconductor element are easily changed by the shape of the pad electrodes, and it is extremely difficult to control the height of the solder bumps. Then, when the protrusion heights of the solder bumps vary, when connecting the semiconductor element to a circuit board or the like, it is possible to reliably achieve the electrical connection between the electrode of the semiconductor element and the electrode of the circuit board. Absent. (2) Electrical inspection of a semiconductor element having solder bumps
Usually, the inspection is performed by bringing an inspection jig such as a pin probe into contact with the solder bump. In such an electrical inspection, solder bumps may be damaged by contact with an inspection jig, so that electrical connection between a pad electrode of a semiconductor element and an electrode of a circuit board can be reliably achieved. And the yield in the manufacture of semiconductor devices and the like is low. (3) Materials constituting the semiconductor element, materials constituting the circuit board, and the like have different thermal expansion coefficients. Therefore, in the obtained semiconductor device, when it receives a thermal history due to a temperature change, for example, a difference in thermal expansion coefficient of each constituent material occurs, or a solder bump or the like is broken by the stress, resulting in poor connection or the like. In addition, the electrical connection with the electrodes of the circuit board may be poor. (4) As the density of semiconductor elements increases, the spacing (pitch) between pad electrodes becomes narrower and the density increases. However, connection between such electrodes and electrodes of a circuit board cannot be ensured. ing.

[0004]

SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and a first object of the present invention is to connect an electrode of a semiconductor element or the like to an electrode of a circuit board or the like. A connector that can easily and reliably achieve electrical connection between the electrodes of the semiconductor element and the electrodes of the circuit board, even if the pitch of the electrode arrangement of the semiconductor element is small. To provide. Further, a second object is to provide a connector capable of reliably and stably maintaining an electrical connection between an electrode such as a semiconductor element and an electrode such as a circuit board, even in an environmental change such as a heat history due to a temperature change. Is to provide. A third object of the present invention is to provide a method for producing the connector advantageously and reliably.

[0005]

The present invention comprises a plurality of conductive portions for electrically connecting one surface and the other surface, and an insulating portion for insulating these conductive portions from each other. The conductive portion includes a polymer material containing conductive particles, and the polymer material is a radiation-sensitive resin material. In addition, it is preferable that the high molecular substance which comprises the said conductive part has elasticity. Further, in the method of manufacturing the connector, a conductive part forming material layer in which conductive particles exhibiting magnetism are dispersed in a radiation-sensitive resin material is formed, and the conductive part forming material layer is formed on the conductive part forming material layer. Then, by applying a magnetic field in the thickness direction, the conductive particles are oriented in the thickness direction of the conductive portion forming material layer, and the conductive portion forming material layer is subjected to an exposure process and a developing process. An object of the present invention is to provide a method for manufacturing a connector, comprising a step of forming a conductive portion.

[0006]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described in detail. FIG. 1 is an explanatory cross-sectional view schematically showing a configuration of an example of a connector according to the present invention. FIG.
In FIG. 1, a columnar conductive portion 30 is arranged on the connector, and the conductive portion electrically connects one surface and the other surface of the connector. Further, between the conductive portions of the connector, an insulating portion 35 that insulates each of the conductive portions from each other is formed. Height H of conductive part 30
Is appropriately selected according to the arrangement pitch of the conductive portions in the connector, the connection electrode diameter, and the like. For example, the arrangement pitch of the conductive parts in the connector is 150 μm, and the connection electrode diameter is 1 μm.
In the case of 00 μm, the height H of the conductive part 30 is 50 to 25
It is preferably 0 μm.

[0007] The conductive portion 30 is a material in which conductive particles R are contained in a polymer substance, preferably in a state of being arranged in the height direction. As the polymer substance constituting the conductive portion 30, a cured product of a radiation-sensitive resin material is used. Such a radiation-sensitive resin material has a thickness of, for example, 10 to 1
A photoresist capable of forming a film having a thickness of 00 μm is preferably used. Among them, from the viewpoint of resolution and peelability,
It is preferable to use a positive type. Examples of the radiation-sensitive resin material include a novolak-based radiation-sensitive resin, a conjugated diene-based radiation-sensitive resin, and an acrylic radiation-sensitive resin. Among these, conjugated diene-based radiation-sensitive resins include, for example, cyclized polybutadiene, cyclized polyisoprene, adducts of polybutadiene or polyisoprene such as maleic anhydride, and polybutadiene or polyisoprene with (meth) acryloyl group or azide. And those into which a photopolymerizable group such as a group is introduced. Examples of the acrylic radiation-sensitive resin include those using a compound having 1, 2, 3, or 4 or more acryloyl groups. Further, a composition of an elastic polymer such as polybutadiene or polyisoprene, a vinyl monomer such as an acrylate ester, and a photopolymerization initiator may be used.

It is preferable that the polymer material forming the conductive portion 30 has elasticity. In particular, the degree of elasticity of the entire conductive portion is, for example, from 3.5 × 10 ⁶ to 6.2 in terms of compression modulus.
What becomes x10 < ⁶ > N / m < ² > is preferable. As a radiation-sensitive resin for obtaining such a polymer substance, a conjugated diene-based radiation-sensitive resin such as a cyclized polybutadiene-based resin is preferably used.

The conductive particles R constituting the conductive portion 30 include, for example, iron, copper, zinc, chromium, nickel, gold, silver,
Known conductive metal particles, such as cobalt and aluminum, and alloys or composite conductive metal particles of two or more of these metal elements, and carbon black can be used. Among these, conductive particles such as carbon black, nickel, iron, and copper are preferable in terms of economy and conductive characteristics. Further, particles whose surface is coated with gold or silver are particularly preferable from the viewpoint of conductivity. Also,
It is preferable to use a material exhibiting magnetism because it can be oriented in the height direction of the conductive portion 30 by a method described later. As the conductive particles R exhibiting magnetism, those obtained by forming a conductive coating on core particles made of a conductive magnetic material can be preferably used. As the conductive magnetic material forming the core particles, nickel, Examples of the metal material exhibiting magnetism such as iron or an alloy thereof include metal materials such as gold, silver, and palladium as the material forming the conductive film. Particularly preferably, the surface is coated with gold or silver, and nickel particles coated with gold or silver are particularly preferable.

The surface of the nickel particles coated with gold, which is particularly preferably used as the conductive particles in the present invention, is obtained by plating the surface of the nickel particles with gold by, for example, electroless plating. Thus, the nickel particles having a gold coating on the surface have extremely low contact resistance. When gold is coated by plating, the film thickness is preferably 500 Å or more.
The plating amount is preferably 1% by weight or more of the particles, more preferably 2 to 10% by weight, and particularly preferably 3 to 7% by weight.

In addition, a conductive particle R whose surface is treated with a coupling agent such as a silane coupling agent or a titanium coupling agent can be appropriately used as long as the conductivity is not impaired. By treating the surface of the conductive particles R with the coupling agent, the adhesive force between the conductive particles R and the polymer substance is increased, and as a result, the obtained conductive portion 30 has high durability. Become.

The content ratio of the conductive particles R in the conductive portion 30 is preferably 4 to 50% by volume, and particularly preferably 10 to 30%. Also, the particle size of the conductive particles is 1 to 1000
μm, more preferably 2 to 500 μm
m, more preferably 3 to 300 μm, particularly preferably 5 to 100
μm. The particle size of the conductive particles R can be appropriately selected depending on the size and shape of the pad electrode 11 of the semiconductor element 10.
Is a square having a width of 100 μm, the particle size of the conductive particles R is preferably 10 to 30 μm. As a result, the conductive portion 30 has good conductivity, and the intended electrical connection can be reliably achieved.

The particle size distribution of the conductive particles (Dw / Dn)
Is preferably 1 to 10, more preferably 1
To 7, more preferably 1.01 to 5, particularly preferably 1.02 to 4. The water content of the conductive particles is 5%.
Is preferably 3% or less, more preferably 2% or less, particularly preferably 1% or less. The shape of the conductive particles is not particularly limited, but is preferably spherical or star-shaped from the viewpoint of easy dispersion in the radiation-sensitive resin material or the like. The conductive part forming material of the present invention containing the above radiation-sensitive resin material and conductive particles, if necessary, contains an inorganic filler such as ordinary silica powder, colloidal silica, airgel silica, and alumina. be able to.

As a material for forming the insulating portion 35, an elastomer such as silicone rubber or urethane rubber, a thermoplastic resin, a thermosetting resin, or the like can be suitably used. Among them, thermosetting resins are preferred in terms of workability and the like,
Specific examples thereof include an epoxy resin, a polyimide resin, and a phenol resin. Further, in order to make the connector of the present invention flexible, it is preferable to use an elastic material such as an elastomer.

According to the above connector, for example, as shown in FIG.
And the terminal electrode 21 of the circuit board 20 are electrically connected via the conductive portion 30 in which the conductive particles R are contained in the polymer material of the connector, so that the semiconductor device is manufactured. At this time, the pad electrode 1 of the semiconductor element 10
Since it is not necessary to form a solder pump on 1 and the polymer material in the conductive portion 30 is made of a cured material of a radiation-sensitive resin material, the conductive portion 30 must be formed by a photolithography technique. Becomes possible,
Therefore, even if the arrangement pitch of the pad electrodes 11 of the semiconductor element 10 is small, the size of the electrodes is uneven, or the arrangement is complicated, the pad electrodes 11 of the semiconductor element 10 The electrical connection between the terminal electrode 20 and the terminal electrode 21 can be reliably achieved by a simple process.

Further, according to the configuration in which the conductive portion 30 is made of a material having elasticity as a polymer substance, even when an inspection jig such as a pin probe is brought into contact with the conductive portion 30 in the electrical inspection of the semiconductor element 10. The conductive part 30 is not damaged. Further, when the semiconductor device receives a thermal history due to a temperature change, a considerably large stress is applied to the conductive portion 30 due to a difference in thermal expansion coefficient between respective constituent materials of the semiconductor element 10, the circuit board 20, and the insulating portion 35. Does, the conductive portion 30 is deformed in accordance with the magnitude of the stress applied to the conductive portion 30 and does not break. Therefore,
A favorable electrical connection between the pad electrode 11 of the semiconductor element 10 and the terminal electrode 21 of the circuit board 20 can be stably maintained even with environmental changes such as thermal history due to temperature changes.

The form of the connector of the present invention may be as shown in FIG. 1 described above, or may be laminated or integrated with a circuit board or a substrate such as a semiconductor element as shown in FIG. Further, as shown in FIG. 3A, a reinforcing sheet or the like may be laminated, or as shown in FIG. 3B, a reinforcing sheet or the like may be integrated into the connector. Further, as shown in FIGS. 4A, 4B, and 4C, a combination of reinforcing frames may be used.

Next, a method of manufacturing a semiconductor device according to the present invention will be described. In the production method of the present invention, first, a conductive part forming material composed of a fluid mixture is prepared by dispersing conductive particles in a liquid radiation-sensitive resin material. Then, as shown in FIG. 5, for example, a prepared conductive portion forming material is applied to one surface of the substrate such as the semiconductor element 10 on which the electrode 11 is formed, so that the conductive element is formed on one surface of the semiconductor element 10. The part forming material layer 31 is formed. In the above, since the conductive portion forming material has a high viscosity due to dispersion of the conductive particles, it is preferable to use a printing method as a means for applying the conductive portion forming material.

By applying a magnetic field to the conductive portion forming material layer 31 in the thickness direction of the conductive portion forming material layer 31 while pre-baking or before pre-baking the conductive portion forming material layer 31 thus formed. Then, the conductive particles are oriented in the thickness direction of the conductive portion forming material layer 31. Specifically, as shown in FIG. 6, the semiconductor element 10 on which the conductive portion forming material layer 31 is formed is disposed between a pair of electromagnets 40 and 41, and the electromagnets 40 and 41 are operated. A parallel magnetic field acts in the thickness direction of the conductive part forming material layer 31, and as a result, the conductive particles R in the conductive part forming material layer 31 are oriented so as to be arranged in the thickness direction.

In the above description, the intensity of the parallel magnetic field applied to the conductive portion forming material layer 31 is 1500 to 500 on average.
A size of 0 Gauss is preferable. As a means for applying a parallel magnetic field, a permanent magnet can be used instead of an electromagnet. As such a permanent magnet, Alnico (F
e-Al-Ni-Co alloy), ferrite, and the like are preferable. In order to orient the conductive particles R in the conductive portion forming material layer 31, a parallel magnetic field may be applied to the entire conductive portion forming material layer 31 in the thickness direction thereof. No equipment is required. The prebaking conditions vary depending on the type of the photosensitive resin material constituting the conductive portion forming material layer 31, but when a general positive resist for a thick film is used, the heating temperature is increased by, for example, oven heating. The heating time is 80 to 100 ° C and the heating time is 10 to 40 minutes.

Next, as shown in FIG.
0, for example, on one surface of a plate-shaped transparent substrate 46, the semiconductor element 1
A photomask 45 on which a light-shielding film 47 is formed is arranged in accordance with a pattern opposite to the arrangement pattern of the zero-electrodes 11, and the conductive portion forming material layer 31 is exposed through the photomask 45. Radiation for exposing the radiation-sensitive resin material includes visible light, ultraviolet light, infrared light, laser light, and electron beam, and preferably includes ultraviolet light, laser light, and electron beam. Then, the exposed portion of the conductive portion forming material layer 31 is subjected to a development process, so that the pad electrode 1 of the semiconductor element 10 is formed as shown in FIG.
The conductive part 30 is formed on the first conductive layer 1.

In the above, the conditions of the exposure processing and the development processing are different depending on the kind of the radiation-sensitive resin material constituting the conductive portion forming material layer 31, but for example, when a general positive resist for a thick film is used. Is exposed to light having a wavelength of 405 nm under an exposure amount of 200 to 600 mJ / cm ^2, is subjected to a development treatment using an organic alkali developing solution, and a conductive portion disposed at a necessary portion is formed. It is formed.

Next, the pad electrode 11 of the semiconductor element 10
Post baking is performed on the conductive portion 30 formed above. In the above, the conditions of the post-baking are different depending on the kind of the photosensitive resin material constituting the conductive portion forming material layer 31, but when a general positive resist for a thick film is used, the heating temperature is 100 to 140. ℃, heating time 5-1
5 minutes. Thereafter, the gap between the conductive portions is filled with an elastomer, a thermoplastic resin, a thermosetting resin, or the like, and the connector is obtained by crosslinking or curing as necessary (upper part of FIG. 9A). As a method for filling the thermosetting resin or the like, various methods such as coating, squeegee, and printing can be used. The curing treatment of the insulating part forming material 36 is as follows.
Although it depends on the type of the insulating portion forming material, it is usually performed by light irradiation or heating.

Further, as an application example of the connector of the present invention, for example, when an electrode of a semiconductor element is electrically connected to an electrode of a circuit board, the following method is possible. (1) As shown in FIG. 10, the semiconductor element 10 having the conductive portion 30 formed on the electrode 11 is overlapped on one surface of the circuit board 20 on which the terminal electrode 21 is formed, so that the terminal electrode 21 of the circuit board 20 is formed. Is in a state where the conductive part 30 is in contact with the conductive part 30. Then, in a state where the semiconductor element 10 is pressed toward the circuit board 20, an insulating portion forming material 36 is injected into the gap S between the semiconductor element 10 and the circuit board 20, and the insulating portion forming material 36 is cured. By performing the above, a semiconductor device in which each of the conductive portions 30 is insulated from each other and the semiconductor element 10 and the circuit board 20 are integrally joined is manufactured.
According to the above manufacturing method, in forming the conductive portion 30,
Since the photolithography technique is used, the conductive portion 30 can be formed on the pad electrode 11 of the semiconductor element 10 at a time. In addition, since the exposure process of the conductive portion forming material layer 31 is performed in a state where the conductive particles R are oriented in the thickness direction of the conductive portion forming material layer 31, in the exposure process, light is applied to the conductive portion forming material layer 31. 31 can be reliably applied to the bottom of the semiconductor element 10, whereby high resolution can be obtained in the subsequent development process. Therefore, even if the arrangement pitch of the pad electrodes 11 of the semiconductor element 10 is small, the The conductive portions 30 positioned and separated from each other can be reliably formed. In addition, since the conductive particles R of the conductive portion 30 to be formed are oriented in the height direction, high conductivity is obtained in the height direction of the conductive portion 30.

(2) As shown in FIG.
A material layer 37 for forming an insulating portion is formed on one surface on which the terminal electrode 21 is formed, and the conductive portion 30 is formed on the electrode 11 on the circuit board 20 on which the material layer 37 for forming the insulating portion is formed.
The conductive element 30 is brought into contact with the terminal electrode 21 of the circuit board 20 by superposing the semiconductor elements 10 on which are formed. Then, the semiconductor element 10 is connected to the circuit board 20.
The insulating portion forming material layer 37 is subjected to a hardening process in a state where the insulating layer forming material layer 37 is pressed toward the substrate. (3) As shown in FIG. 12, an insulating part forming material layer 37 is formed on one surface of the semiconductor element 10 where the conductive part 30 is formed.
Is formed and a curing process is performed. Alternatively, the semiconductor element 10 on which the insulating portion forming material layer 37 is formed is mounted on the circuit board 20.
Of the conductive part 30 on the terminal electrode 21 of the circuit board 20
Are in contact with each other. Then, in a state where the semiconductor element 10 is pressed toward the circuit board 20, the insulating portion forming material layer 37 is cured. In the methods (2) and (3), the post-baking of the conductive portion 30 can be performed in the same step as the hardening treatment of the insulating portion forming material layer 37.

[0026]

The present invention will be described below in more detail with reference to Examples, but it should not be construed that the present invention is limited thereto. Example 1 (1) Preparation of a material for forming a conductive part: 60 conductive particles having an average particle diameter of 25 μm in which a core film made of nickel and a coating film made of gold were formed in a novolak-based resist.
A material for forming a conductive portion was prepared by mixing at a ratio of weight%.

(2) Formation of conductive part: dimensions 100 μm × 1
A semiconductor element (10) is prepared in which a plurality of pad electrodes (21) made of 00 μm rectangular aluminum are arranged at a pitch of 180 μm, and a prepared conductive part forming surface is formed on one surface on which the pad electrodes (11) are formed. The material was applied to form a conductive portion forming material layer (31) (see FIG. 5). The semiconductor element (1) to which the conductive layer forming material layer (31) is applied.
0) is disposed between the pair of electromagnets (17, 18) and the electromagnets (17, 18) are operated to generate a parallel magnetic field of 2500 Gauss in the thickness direction of the conductive portion forming material layer (31). At the same time, the conductive portion forming material layer (31) was pre-baked at 85 ° C. for 30 minutes (see FIG. 6).

Next, a photomask 45 having a light-shielding film (47) formed on one surface of the plate-shaped transparent substrate (46) in accordance with a pattern opposite to the arrangement pattern of the pad electrodes (11) of the semiconductor element (10). The conductive part forming material layer (31) is exposed to light having a wavelength of 405 nm under an exposure amount of 400 mJ / cm ^2, and then the conductive part forming material layer (31) is applied to the conductive part forming material layer (31). Then, by performing development processing using a developing solution composed of tetramethylammonium hydroxide, the semiconductor device (1
A conductive portion (30) was formed on the pad electrode (11) of (0) (see FIGS. 7 and 8). Then, the semiconductor element (1
0) on the conductive portion (3) formed on the pad electrode (11).
0) was post-baked at 150 ° C. for 30 minutes. Next, the gap S between the conductive portions (30) in FIG.
Then, an epoxy resin was injected as a material (36) for forming an insulating portion, and a curing treatment was performed to obtain a connector shown in A of FIG. 9A.

Example 2 In Example 1, a conductive part and an insulating part were formed in the same manner as in Example 1 except that a substrate having a release agent applied to the surface thereof was used instead of the semiconductor (10). And the connector body was taken out to obtain a connector as shown in FIG. The obtained connector was able to reliably connect the electrodes of the electronic component and was extremely useful.

[0030]

According to the connector of the first aspect,
For example, since a pad electrode of a semiconductor element and a terminal electrode of a circuit board are electrically connected to each other via a conductive portion including conductive particles contained in a polymer substance, when manufacturing the semiconductor device, Since it is not necessary to form a solder pump on the pad electrode of the semiconductor element and the polymer material in the conductive portion is made of a cured material of a photosensitive resin material, the conductive portion is formed by a photolithography technique. Therefore, even if the arrangement pitch of the pad electrodes of the semiconductor element is small, the electrical connection between the pad electrodes of the semiconductor element and the terminal electrodes of the circuit board can be reliably achieved in a simple process. it can.

According to the semiconductor device of the second aspect, according to the configuration using an elastic polymer material in the conductive portion, an inspection jig such as a pin probe can be used in the electrical inspection of the semiconductor element. Even if it comes into contact with conductive parts,
The conductive part is not damaged. Further, by receiving a thermal history due to a temperature change, even if a considerably large stress acts on the conductive portion due to a difference in thermal expansion coefficient between the constituent materials of the semiconductor element, the circuit board, and the sealing portion, The conductive portion is not damaged because it is deformed according to the magnitude of the stress applied thereto. Therefore, even in a change in environment such as a heat history due to a temperature change, a good electrical connection between the pad electrode of the semiconductor element and the terminal electrode of the circuit board can be stably maintained.

According to the third aspect of the present invention, since the photolithography technique is used in forming the conductive portion, the conductive portion can be formed on the pad electrode of the semiconductor element at a time. . Moreover, in order to perform the exposure processing of the conductive part forming material layer in a state where the conductive particles are oriented in the thickness direction of the conductive part forming material layer, in the exposure processing, light is applied to the bottom of the conductive part forming material layer. Can be reliably actuated, whereby high resolution can be obtained in the subsequent development process, so that even if the arrangement pitch of the pad electrodes of the semiconductor element is small, they are located on each pad electrode and separated from each other. The conductive portion in the state can be reliably formed. Further, since the conductive particles of the formed conductive portion are oriented in the height direction, high conductivity is obtained in the height direction of the conductive portion.

[Brief description of the drawings]

FIG. 1 is an explanatory cross-sectional view schematically showing a configuration of an example of a connector according to the present invention.

FIG. 2 is an explanatory cross-sectional view schematically showing a configuration of an example of a connector according to the present invention.

FIG. 3 is an explanatory cross-sectional view schematically showing a configuration of an example of a connector according to the present invention.

FIG. 4 is an explanatory cross-sectional view schematically showing a configuration of an example of a connector according to the present invention.

FIG. 5 is an explanatory cross-sectional view showing a state in which a conductive portion forming material layer is formed on one surface of a semiconductor element on which pad electrodes are formed.

FIG. 6 is an explanatory view showing a state in which a parallel magnetic field is applied to a conductive part forming material layer and conductive particles are oriented in a thickness direction.

FIG. 7 is an explanatory view showing a step of performing an exposure process on a conductive portion forming material layer.

FIG. 8 is an explanatory cross-sectional view showing a state where a conductive portion is formed on an electrode of a semiconductor element.

FIG. 9 is an explanatory cross-sectional view showing an example in which a semiconductor element is arranged on a circuit board to form an insulating portion, and an example in which the insulating section is connected to the circuit board.

FIG. 10 is an explanatory cross-sectional view showing another example of the step of forming an insulating portion by disposing a semiconductor element on a circuit board.

FIG. 11 is an explanatory cross-sectional view showing still another example of the step of forming an insulating portion by disposing a semiconductor element on a circuit board.

FIG. 12 is an explanatory cross-sectional view showing yet another example of the step of forming an insulating portion by disposing a semiconductor element on a circuit board.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 Semiconductor element 11 Pad electrode 20 Circuit board 21 Terminal electrode 30 Conductive part 35 Insulating part 36 Insulating part forming material 37 Insulating part forming material layer 40, 41 Electromagnet 45 Photomask 46 Transparent base 47 Light shielding film R Conductive particle S Gap

Claims (3)

[Claims] 1. A semiconductor device comprising: a plurality of conductive portions for electrically connecting one surface and the other surface; and an insulating portion for insulating the conductive portions from each other. Wherein the high molecular substance is a radiation-sensitive resin material. 2. The connector according to claim 1, wherein the polymer material constituting the conductive portion has elasticity. 3. The method for manufacturing a connector according to claim 1, wherein a conductive portion forming material layer is formed by dispersing conductive particles exhibiting magnetism in a radiation-sensitive resin material.
By applying a magnetic field to the conductive portion forming material layer in the thickness direction, the conductive particles are oriented in the thickness direction of the conductive portion forming material layer, and the conductive particles are aligned with the conductive portion forming material layer. A method for manufacturing a connector, comprising a step of forming a conductive portion by performing an exposure process and a development process.