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WO1992011638A3 - Rafraichissement synchrone d'une memoire ram dynamique - Google Patents

Rafraichissement synchrone d'une memoire ram dynamique Download PDF

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Publication number
WO1992011638A3
WO1992011638A3 PCT/EP1991/002386 EP9102386W WO9211638A3 WO 1992011638 A3 WO1992011638 A3 WO 1992011638A3 EP 9102386 W EP9102386 W EP 9102386W WO 9211638 A3 WO9211638 A3 WO 9211638A3
Authority
WO
WIPO (PCT)
Prior art keywords
refresh
row
memory cells
data access
dram
Prior art date
Application number
PCT/EP1991/002386
Other languages
English (en)
Other versions
WO1992011638A2 (fr
Inventor
Gerald Lee Frenkil
Steven E Golson
Original Assignee
Vlsi Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vlsi Technology Inc filed Critical Vlsi Technology Inc
Priority to EP92900267A priority Critical patent/EP0563082B1/fr
Priority to DE69104498T priority patent/DE69104498T2/de
Priority to JP04500385A priority patent/JP3140461B2/ja
Priority to KR1019930701858A priority patent/KR930703684A/ko
Publication of WO1992011638A2 publication Critical patent/WO1992011638A2/fr
Publication of WO1992011638A3 publication Critical patent/WO1992011638A3/fr

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)

Abstract

Mémoire RAM dynamique (DRAM) assurant un rafraîchissement synchrone de ses cellules de mémoire. Le rafraîchissement s'effectue pendant un segment de rafraîchissement du cycle d'horloge. Selon un mode préféré de réalisation, la DRAM sélectionne, immédiatement avant le début de chaque cycle d'horloge, une ligne de mots pour une ligne de cellules de mémoire pour lesquelles un accès à l'information doit se produire. La DRAM sélectionne également au moins une ligne de mots pour au moins une ligne de cellules de mémoire pour lesquelles un rafraîchissement doit se produire. Au cours du cycle de rafraîchissement, chaque ligne de cellules de mémoire sélectionnée pour l'accès à l'information ou pour le rafraîchissement subit un rafraîchissement. Après ledit cycle de rafraîchissement, et pendant un segment d'accès à l'information dudit cycle d'horloge, la DRAM continue à sélectionner la ligne de mots pour la ligne de cellules de mémoire pour lesquelles l'accès à l'information doit se produire. Cependant, la DRAM ne sélectionne plus ladite ligne de mots pour ladite ligne de cellules de mémoire sélectionnée pour le rafraîchissement. Pendant le segment d'accès à l'information du cycle d'horloge, ledit accès à l'information s'effectue sur la ligne de cellules de mémoire qui demeure sélectionnée.
PCT/EP1991/002386 1990-12-21 1991-12-10 Rafraichissement synchrone d'une memoire ram dynamique WO1992011638A2 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP92900267A EP0563082B1 (fr) 1990-12-21 1991-12-10 Rafraichissement synchrone d'une memoire ram dynamique
DE69104498T DE69104498T2 (de) 1990-12-21 1991-12-10 Synchrone auffrischung eines dynamischen ram-speichers.
JP04500385A JP3140461B2 (ja) 1990-12-21 1991-12-10 ランダム・アクセス・メモリ
KR1019930701858A KR930703684A (ko) 1990-12-21 1991-12-10 은폐 재생을 위한 동적임의접근 기억장치 및 방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/631,618 US5193072A (en) 1990-12-21 1990-12-21 Hidden refresh of a dynamic random access memory
US631,618 1990-12-21

Publications (2)

Publication Number Publication Date
WO1992011638A2 WO1992011638A2 (fr) 1992-07-09
WO1992011638A3 true WO1992011638A3 (fr) 1992-09-17

Family

ID=24532007

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP1991/002386 WO1992011638A2 (fr) 1990-12-21 1991-12-10 Rafraichissement synchrone d'une memoire ram dynamique

Country Status (6)

Country Link
US (1) US5193072A (fr)
EP (1) EP0563082B1 (fr)
JP (1) JP3140461B2 (fr)
KR (1) KR930703684A (fr)
DE (1) DE69104498T2 (fr)
WO (1) WO1992011638A2 (fr)

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Also Published As

Publication number Publication date
JPH06503914A (ja) 1994-04-28
EP0563082B1 (fr) 1994-10-05
DE69104498T2 (de) 1995-05-24
KR930703684A (ko) 1993-11-30
EP0563082A1 (fr) 1993-10-06
WO1992011638A2 (fr) 1992-07-09
JP3140461B2 (ja) 2001-03-05
US5193072A (en) 1993-03-09
DE69104498D1 (de) 1994-11-10

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