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WO1996013853A1 - Solution d'enrobage comprenant un polymere de siloxane et procede pour produire cette solution - Google Patents

Solution d'enrobage comprenant un polymere de siloxane et procede pour produire cette solution Download PDF

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Publication number
WO1996013853A1
WO1996013853A1 PCT/JP1995/002220 JP9502220W WO9613853A1 WO 1996013853 A1 WO1996013853 A1 WO 1996013853A1 JP 9502220 W JP9502220 W JP 9502220W WO 9613853 A1 WO9613853 A1 WO 9613853A1
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WIPO (PCT)
Prior art keywords
average molecular
molecular weight
coating solution
siloxane
weight
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP1995/002220
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English (en)
Japanese (ja)
Inventor
Masami Koshiyama
Kazumi Kodama
Syun-Ichi Fukuyama
Yoshihiro Nakata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zeon Corp
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Nippon Zeon Co Ltd
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Filing date
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Application filed by Fujitsu Ltd, Nippon Zeon Co Ltd filed Critical Fujitsu Ltd
Publication of WO1996013853A1 publication Critical patent/WO1996013853A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate

Definitions

  • the present invention relates to a coating solution containing a siloxane-based polymer and a polar organic solvent and a method for producing the same, and more specifically, it is excellent in flatness, crack resistance, coating properties, adhesion to a substrate, and the like.
  • the present invention relates to a siloxane-based polymer-containing coating liquid capable of forming a coated film and a method for producing the same.
  • the coating solution of the present invention is a material for manufacturing a semiconductor device, for example, a coating solution for forming an insulating film such as an intermediate layer in a multilayer resist method, an interlayer insulating film, a semiconductor device surface protective film, and a PN junction protective film. It is useful as a material for filling holes in trenches for separating semiconductor elements. Background art
  • various multi-layer resist methods have been proposed as a method of processing the dimensions of a substrate opening region on a substrate having a step by a lithographic technique using a resist.
  • a method has been adopted in which a step of the substrate is flattened by a lower layer made of a thick polymer film, and an upper layer made of a thin resist film is provided on the lower layer (flattening layer). Then, a high-resolution pattern is formed on the thin resist upper layer, and this pattern is transferred to the lower thick polymer layer.
  • the transfer of the upper resist pattern to the lower layer is performed by highly anisotropic dry etching using oxygen plasma.
  • a vacuum-deposited film such as silicon dioxide / silicon nitride or a spin-coated film is provided between the lower layer of the thick film polymer and the upper layer of the resist.
  • the role of the lower layer is to flatten the steps of the substrate and to function as a protective film during dry etching of the subsequent substrate.
  • a method of forming a taper in the step edge portion by heat-treating (Phos pphos i1ca teglasss) or BPSG (Boropshos phosoilcateglass) has been used.
  • BPSG Boopshos phosoilcateglass
  • a method of flattening the unevenness of the base by spin-coating a polymer material has also been used.
  • a non-volatile positive resist or a polymer obtained by heating and curing polyimide, or a siloxane polymer can be used. Has been proposed.
  • JP-A-64-92231 discloses that tetraalkanol silane, trialkoxy silane, and dian alkoxy silane are used as the alkoxysilane, and Hydrolysis in the presence of a catalyst and, if necessary, a solvent
  • a method for producing a three-dimensional siloxane-based polymer for forming an insulating film by dissolving polycondensation and then distilling off the generated alcohol and the solvent at 60 or less is disclosed. I have.
  • the weight average molecular weight (GPC method, polystyrene conversion) of the siloxane polymer three-dimensionalized in this way is from 50,000 to 500,000, preferably.
  • the three-dimensional siloxane-based polymer described in the publication has insufficient flattening characteristics and is used as a material for forming a flattened layer. Was still found to be inadequate. Disclosure of the invention
  • An object of the present invention is to provide a coating containing a siloxane-based polymer capable of forming a coating film (insulating film) having excellent flatness, crack resistance, coating properties, and adhesion to a substrate. It is to provide a liquid and a method for producing the liquid.
  • trialkoxysilane and Z or tetraalkoxysilane can be used in the presence of water, an acid catalyst, and a polar organic solvent.
  • a polysiloxane-based polymer synthesized by hydrolytic condensation polymerization at 5 to 45 which is measured by gel permeation chromatography
  • the weight average molecular weight measured by the method is 50,000 to 1,500, and the ratio (MwZMn) between the weight average molecular weight (Mw) and the number average molecular weight (Mn) is less than 1.40. It has been found that when a solution containing a siloxane-based polymer and a polar organic solvent in an amount sufficient to uniformly dissolve the siloxane-based polymer is used as a coating solution, excellent flatness characteristics are exhibited.
  • This coating liquid has good application properties and can provide a coating film having excellent crack resistance, adhesion to a substrate, insulation, and dry etching resistance.
  • storage stability can be improved by selecting the type of solvent used for the condensation polymerization or the solvent used for diluting the polymerization solution.
  • a gel perm obtained by hydrolytic condensation polymerization of at least one alkoxy silane selected from the group consisting of a trialkoxy silane and a tetralanoxy silane.
  • MwZM n weight average molecular S
  • a siloxane-containing polymer-containing coating solution is provided.
  • At least one type of alkoxysilane selected from the group consisting of trialkoxysilane and tetraalkoxysilane is used in the presence of water, an acid catalyst, and a polar organic solvent.
  • the gel permeation is characterized by being hydrolyzed and condensed at temperatures of 5 to 45 below.
  • Polystyrene-equivalent weight-average molecular weight by chromatographic measurement method is 500-: I, 500, and the weight-average molecular weight (Mw) and number-average molecular weight (A method for producing a coating solution containing a siloxane catalyst having a ratio (MwZMn) of less than 1.40 to Mn) is provided.
  • alkoxysilane selected from the group consisting of trialkoxysilane and tetraalkoxysilane is used as alkoxysilane.
  • Trialkoxysilane is a compound represented by the formula R 1 S i (OR 2 ) 3
  • tetraalkoxy silane is a compound represented by the formula S i (OR 3 ) ⁇ is there.
  • R ′ to R S are an alkyl group having 1 to 6 carbon atoms or an aryl group having 6 to 10 carbon atoms.
  • R 'R 3 are arbitrary preferable are those wherein the alkyl group having 1 to 3 carbon atoms.
  • Trialkoxysilanes include, for example, methyltrimethoxysilane, methinoletriethoxysilane, methyltripropoxysilane, ethyltrimethoxysilane, and methyltrimethoxysilane.
  • Examples include alkyltrialkoxysilanes such as ethyltriethoxysilane and ethyltripropoxysilane. Of these, methyltrimethoxysilane and methyltriethoxysilane are preferred, and methyltriethoxysilane is particularly preferred.
  • Tetraalkoxysilanes include, for example, tetramethoxysilane, tetraethoxysilane, tetrapropoxysilane, and the like. Among these, tetramethysilan and tetraethoxysilane are preferred, and tetraethoxysilane is particularly preferred.
  • Trialkoxysilane and tetraalkoxysilane both preferably have an alkoxy group having 1 to 3 carbon atoms. When the number of carbon atoms in the alkoxy group is large, a hydrolysis reaction does not easily occur during polycondensation, and it is difficult to obtain a desired polymer.
  • Trialkoxysilane and tetraalkoxysilane can be used alone or in combination. It is preferable to use both of them from the viewpoints of various properties of the coating film such as crack resistance and adhesion to a substrate.
  • the usage ratio of trialkoxysilane and tetraalkoxysilane is usually 10 to 90: 90 to: 10; preferably 20 to 70: 80 to 30; more preferably 30 to 60: 70 to 40.
  • the proportion of trialkoxysilane increases, the adhesion of the coating to the substrate decreases, and as the proportion of tetraalkoxysilane increases, the hardness of the coating increases. This tends to cause cracks.
  • the siloxane-based polymer of the present invention comprises at least one alkoxysilane selected from the group consisting of trialkoxysilane and tetraalkoxysilane, which is obtained by adding water, an acid catalyst, and a polar organic solvent. It can be synthesized by hydrolytic polycondensation at a temperature of 5 to 45 in the presence of water.
  • the amount of water is usually from 0.5 to 3 equivalents, preferably from 0.7 to 2 equivalents, more preferably from 0.7 to 3 equivalents, based on the total alkoxy groups of the trialkoxysilane and tetralankoxysilane. 8-1.5 equivalents. If the amount of water used is too small, the number of alkoxy groups increases as uncondensed groups. Conversely, if the amount of water is too large, gelation tends to occur. Absent.
  • an acid catalyst generally used in the production of siloxane catalysts can be used, and specific examples thereof include nitric acid, hydrochloric acid, and sulfuric acid.
  • the amount of the acid catalyst used depends on the type of the acid catalyst, but is usually used in the range of about 3 to 2000 ppm. When nitric acid is used as the catalyst, the amount used is usually 50 to 1,500 ppm, preferably 200 to 80 ppm.
  • polar organic solvent a solvent generally used in the production of siloxane-based polymers can be used, but in order to obtain a low-molecular-weight polymer, it is necessary to use acetone; methanol Alcohols having 1 to 4 carbon atoms, such as ethanol, ethanol, butanol, and butanol; propylene glycol having 1 to 2 carbon atoms, such as propylene glycol monomethyl ether and propylene glycol monoethyl ether; Coal monoalkyl ethers are preferred. Among these, acetate, alcohols having 1 to 4 carbon atoms, and propylene glycol monoalkyl ethers having 1 to 2 carbon atoms in the alkyl portion are preferred from the viewpoint of storage stability and flatness. .
  • a polar organic solvent i is usually 0.1 to 1.5 equivalents, preferably 0.3 to 1.3 equivalents, based on all alkoxy groups of the trialkoxysilane and tetraalkoxysilane. More preferably, it is 0.5 I.O. equivalent.
  • the reaction temperature is preferably between 10 and 30. If the reaction temperature is too low, the progress of the hydrolysis-condensation polymerization reaction will be slow, and if it exceeds 45, the weight average molecular weight of the obtained siloxane-based polymer will be large and the flatness will be impaired.
  • the reaction time varies depending on the temperature, the polar organic solvent i and the like, but is usually 2 to 72 hours, and when the reaction is carried out at about 20, it is usually 4 to 6 hours.
  • the siloxane-based polymer obtained in this way has a weight-average molecular weight (Mw) of 500 to 1,500 in terms of polystyrene by the GPC method. It is a low-molecular-weight S and low-dispersion polymer having a ratio (MwZMn) between the molecular weight and the number average molecular weight (Mn) of less than 1.40, preferably 1.30 or less.
  • MwZMn ratio
  • the siloxane polymer is dissolved in a polar organic solvent in an amount sufficient to uniformly dissolve the siloxane polymer to form a siloxane polymer-containing coating solution.
  • a polar organic solvent used in the polycondensation reaction is sufficient to uniformly dissolve the produced siloxane-based polymer, no additional polar organic solvent may be added to the reaction solution.
  • the polar organic solvent for dilution is not particularly limited as long as the siloxane polymer of the present invention can be dissolved. However, when a specific polar organic solvent is used, the polysiloxane polymer during storage can be used. In addition, it is possible to maintain the flattening characteristics by preventing the increase in the molecular weight of the polymer, and to show an excellent effect on the coating characteristics.
  • Such polar organic solvents include, for example, acetate; propylene glycol monoalkyl ether such as propylene glycol monomethyl ether and propylene glycol monoethyl ether; A Lukinole ethers; Metanole, Etanole, P? Alcohols having 1 to 4 carbon atoms, such as phenol, isopanol, n-butanol, s-butanol, t-butanol, and isobutanol; these; And a mixture of two or more of the above.
  • polar organic solvents include, for example, propylene glycol monoalkyl ethers having an alkyl portion of 3 or more carbon atoms, alcohols having 5 or more carbon atoms, ethers, diols, and ethylene glycol monoa.
  • alkyl ethers or the like cannot improve the storage stability or conversely increase the molecular weight of the siloxane polymer during storage, which may adversely affect coatability and flatness .
  • solvents other than the above-mentioned preferred polar organic solvents can be used in combination.
  • the amount of the polar organic solvent used for dilution can be appropriately selected according to the thickness of the coating film, but if the amount is small, the molecular weight of the siloxane-based polymer during storage is reduced. On the other hand, if the rate of increase becomes large, and if the amount used is too large, the polymer port degree will be too low and the thickness of the coating film will not be sufficient, so neither is preferable.
  • the mixing ratio (weight ratio) of the siloxane-based polymer reaction solution obtained by the hydrolysis-condensation polymerization to the polar organic solvent for dilution is usually 90:10 to 20:80, Preferably it is 80:20 to 30:70.
  • the siloxane-based polymer-containing coating solution of the present invention contains a low-molecular-weight, low-dispersion siloxane-based polymer, and is applied to a wired substrate by a spin coating method or the like. This makes it possible to form a film (flattening film) that evenly fills the steps due to the wiring on the substrate.
  • the obtained coating film has excellent crack resistance and adhesion to the substrate, and has the same relative dielectric constant and stress as those of the conventional product. Therefore, the coating solution containing a siloxane polymer of the present invention is useful as a material for manufacturing a semiconductor element such as a planarizing layer.
  • the coating liquid of the present invention is used as a coating liquid for forming a semiconductor insulating film such as a wiring interlayer insulating film, a semiconductor element surface protective film, a PN junction protective film, etc., and a material for filling holes in a trench for separating elements. It is also useful.
  • a semiconductor insulating film such as a wiring interlayer insulating film, a semiconductor element surface protective film, a PN junction protective film, etc.
  • a material for filling holes in a trench for separating elements It is also useful.
  • the measuring methods of physical properties are as follows.
  • the value measured by the GPC method was expressed as a polystyrene (standard sphere) converted value using TSKstandandarP0LYSTYRNENE.
  • the measurement by the GPC method was performed by using an HLC-820 manufactured by Tosoh Corporation as an apparatus, and connecting two G200Hs manufactured by Tosoh Corporation as columns.
  • the test was carried out using IR as the extractor and tetrahydrofuran as the solvent.
  • the flow rate was 1 m1 minute.
  • the ratio (Mw / Mn) between the weight-average molecular weight (Mw) and the number-average molecular weight (Mn) was determined by the following formula using a conventional method.
  • Example 4 Methanoletriethoxysilane 14.26 g, Tetraethoxysilane 20.83 g, and Acetone 25.55 g with stirrer 200 m1 flask Then, while stirring, 11.52 g of a 400 ppm nitric acid aqueous solution was added. The mixture was stirred for 5 hours while maintaining the reaction temperature at 15 to 25.
  • the siloxane polymer obtained by the hydrolytic condensation polymerization had a weight average molecular weight of 700 and a dispersity of 1.11.
  • 42.37 g of a mixed solvent of 40% isopropyl alcohol / n-butanol (weight ratio) was added to prepare a coating solution.
  • siloxane polymer obtained by the hydrolytic condensation polymerization had a weight average molecular weight of 800 and a dispersity of 1.17.
  • To the reaction solution was added 43.46 g of a solvent mixture of 407 (weight ratio) of pill alcohol Zn-butanol, which was used as a coating solution.
  • Example 4 was repeated except that 5.45 g of methyltrimethoxysilane and 7.61 g of tetramethysilanine were used instead of methyltriethoxysilane and tetraethoxysilane. Hydrolytic condensation polymerization was performed in the same manner, and then a coating solution was prepared in the same manner.
  • the siloxane-based polymer obtained by the hydrolysis-condensation polymerization had a weight-average molecular weight of 700 and a dispersion of 1.34.
  • the solvent was subjected to hydrolysis and condensation polymerization in the same manner as in Example 1 except that propylene glycol monomethyl ether was used instead of acetone. Prepared.
  • the siloxane-based polymer obtained by the hydrolysis-condensation polymerization had a weight-average molecule: a of 700 and a dispersity of 1.12.
  • the degree of dispersion was 1.40.
  • 23.28 g of a 40/7 (weight ratio) mixed solvent of isopropyl alcohol Zn-butanol was added to prepare a coating solution.
  • the siloxane-based polymer obtained by the hydrolysis condensation polymerization has a weight average molecular weight of 1,1.
  • Methyltrimethoxysilane 7.13 g, Tetramethoxysilane 10.
  • Each of the coating solutions prepared in Examples 1 to 10 and Comparative Examples 1 to 3 was coated with aluminum having a width of 0.4 to 0.5 m, a height of 0.5 // m, and a wiring interval of 0.3 to 0.
  • Spin coating was performed on the silicon substrate on which the aluminum wiring pattern was formed at an appropriate rotation speed for 5 seconds using a spinner so that the final film thickness was 3,000 ng-strom. .
  • the solvent was dried at 250 at 2 minutes, and then heat-treated at 450 at 30 minutes in nitrogen gas.
  • Example 3 The amount of the organic polar solvent used in the reaction is equivalent to all alkoxy groups.
  • Examples 1 to 9 and Comparative Examples 1 and 2 are acetone, and Example 10 is propylene glycol monomethyl ether.
  • a siloxane polymer-containing coating solution capable of forming a coating film having excellent flatness, crack resistance, coating properties, adhesion to a substrate, and the like, and a method for producing the same.
  • the coating solution of the present invention is a material for manufacturing semiconductor devices, for example, a coating for forming an insulating film such as an intermediate layer in a multilayer resist method, a wiring interlayer insulating film, a semiconductor device surface protective film, and a PN junction protective film. It is useful as a material for filling holes in liquids and trenches for element separation.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
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  • Power Engineering (AREA)
  • Silicon Polymers (AREA)
  • Paints Or Removers (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

Cette invention se rapporte à une solution d'enrobage, qui comprend un polymère de siloxane qu'on prépare en effectuant l'hydrolyse et la polycondensation d'au moins un alcoxysilane choisi dans le groupe constitué de trialcoxysilanes et de tétraalcoxysilanes et ayant un poids moléculaire moyen en poids compris entre 500 et 1500 en termes de polystyrène, tel qu'il est mesuré par chromatographie par perméation sur gel, ainsi qu'un rapport entre le poids moléculaire moyen en poids et le poids moléculaire moyen en nombre inférieur à 1,40, ainsi qu'un solvent organique polaire en quantité suffisante pour dissoudre ledit polymère de façon homogène. Cette solution peut former un film d'enrobage ayant d'excellentes caractéristiques de planéité, de résistance à la fissuration, d'appliquabilité et d'adhérence aux substrats à recouvrir.
PCT/JP1995/002220 1994-10-31 1995-10-30 Solution d'enrobage comprenant un polymere de siloxane et procede pour produire cette solution Ceased WO1996013853A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP6292176A JPH08130247A (ja) 1994-10-31 1994-10-31 シロキサン系ポリマー含有塗布液及びその製造方法
JP6/292176 1994-10-31

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0997497A4 (fr) * 1997-07-15 2001-07-11 Asahi Chemical Ind Composition alcoxysilane/polymere organique destinee a la production de fines pellicules isolantes et procede d'utilisation
US6448331B1 (en) 1997-07-15 2002-09-10 Asahi Kasei Kabushiki Kaisha Alkoxysilane/organic polymer composition for thin insulating film production and use thereof
US6503633B2 (en) 2000-05-22 2003-01-07 Jsr Corporation Composition for film formation, process for producing composition for film formation, method of film formation, and silica-based film
WO2015005333A1 (fr) * 2013-07-11 2015-01-15 日産化学工業株式会社 Composition formant un film d'indice de réfraction élevé

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EP1058274B1 (fr) * 1999-06-04 2005-07-27 JSR Corporation Composition pour la fabrication des couches et matériau pour des couches isolantes
JP4622061B2 (ja) * 2000-07-27 2011-02-02 Ｊｓｒ株式会社 レジスト下層膜用組成物およびその製造方法
JP4545973B2 (ja) * 2001-03-23 2010-09-15 富士通株式会社 シリコン系組成物、低誘電率膜、半導体装置および低誘電率膜の製造方法
JP2002285086A (ja) * 2001-03-26 2002-10-03 Jsr Corp 膜形成用組成物、膜の形成方法およびシリカ系膜
US7345351B2 (en) 2003-04-09 2008-03-18 Lg Chem, Ltd. Coating composition for insulating film production, preparation method of insulation film by using the same, insulation film for semi-conductor device prepared therefrom, and semi-conductor device comprising the same
JP4796498B2 (ja) * 2003-05-23 2011-10-19 ダウ コーニング コーポレーション 高い湿式エッチング速度を持つシロキサン樹脂系反射防止被覆組成物
JP2011114165A (ja) * 2009-11-26 2011-06-09 Ube Nitto Kasei Co Ltd 素子分離材料用塗布液の作製方法、素子分離材料用塗布液、素子分離層用薄膜、素子分離層用薄膜の形成方法、基板、及び、基板の形成方法
JP5462603B2 (ja) * 2009-11-26 2014-04-02 宇部エクシモ株式会社 素子分離材料用塗布液、素子分離材料用塗布液の作製方法、素子分離層用薄膜、素子分離層用薄膜の形成方法、基板、及び、基板の形成方法
JP2011114164A (ja) * 2009-11-26 2011-06-09 Ube Nitto Kasei Co Ltd 素子分離材料用塗布液の作製方法、素子分離材料用塗布液、素子分離層用薄膜、素子分離層用薄膜の形成方法、基板、及び、基板の形成方法
JP2011114163A (ja) * 2009-11-26 2011-06-09 Ube Nitto Kasei Co Ltd 素子分離材料用塗布液、素子分離材料用塗布液の作製方法、素子分離層用薄膜、素子分離層用薄膜の形成方法、基板、及び、基板の形成方法
JP2012136559A (ja) * 2010-12-24 2012-07-19 Asahi Kasei E-Materials Corp ポリシロキサン縮合反応物ワニスの製造方法
JP6044792B2 (ja) * 2012-02-02 2016-12-14 日産化学工業株式会社 低屈折率膜形成用組成物
WO2016136557A1 (fr) * 2015-02-27 2016-09-01 富士フイルム株式会社 Composition formant un film protecteur, procédé de formation d'un film protecteur et stratifié comportant un film protecteur
KR102455674B1 (ko) * 2017-11-17 2022-10-17 미쓰이 가가쿠 가부시키가이샤 반도체 소자 중간체, 금속 함유막 형성용 조성물, 반도체 소자 중간체의 제조 방법, 및 반도체 소자의 제조 방법
JP7343425B2 (ja) * 2020-03-13 2023-09-12 日立造船株式会社 カーボンナノチューブの製造方法

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JPH03188179A (ja) * 1989-12-15 1991-08-16 Hitachi Chem Co Ltd シリカ系被膜形成用塗布液，半導体基板の製造法および半導体デバイス
JPH03221577A (ja) * 1990-01-26 1991-09-30 Sumitomo Chem Co Ltd 絶縁膜形成用塗布液
JPH0439371A (ja) * 1990-06-04 1992-02-10 Fujitsu Ltd 絶縁膜形成方法および絶縁膜を有する半導体装置
JPH04104253A (ja) * 1990-08-24 1992-04-06 Fujitsu Ltd 有機ケイ素重合体、その製法並びにそれを用いた半導体装置及びその製法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03188179A (ja) * 1989-12-15 1991-08-16 Hitachi Chem Co Ltd シリカ系被膜形成用塗布液，半導体基板の製造法および半導体デバイス
JPH03221577A (ja) * 1990-01-26 1991-09-30 Sumitomo Chem Co Ltd 絶縁膜形成用塗布液
JPH0439371A (ja) * 1990-06-04 1992-02-10 Fujitsu Ltd 絶縁膜形成方法および絶縁膜を有する半導体装置
JPH04104253A (ja) * 1990-08-24 1992-04-06 Fujitsu Ltd 有機ケイ素重合体、その製法並びにそれを用いた半導体装置及びその製法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0997497A4 (fr) * 1997-07-15 2001-07-11 Asahi Chemical Ind Composition alcoxysilane/polymere organique destinee a la production de fines pellicules isolantes et procede d'utilisation
US6448331B1 (en) 1997-07-15 2002-09-10 Asahi Kasei Kabushiki Kaisha Alkoxysilane/organic polymer composition for thin insulating film production and use thereof
US6503633B2 (en) 2000-05-22 2003-01-07 Jsr Corporation Composition for film formation, process for producing composition for film formation, method of film formation, and silica-based film
WO2015005333A1 (fr) * 2013-07-11 2015-01-15 日産化学工業株式会社 Composition formant un film d'indice de réfraction élevé

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Publication number Publication date
JPH08130247A (ja) 1996-05-21

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