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WO1996036053A1 - Emetteur de faisceaux ioniques pourvu d'un detecteur de particules secondaires et procede de detection de particules secondaires - Google Patents

Emetteur de faisceaux ioniques pourvu d'un detecteur de particules secondaires et procede de detection de particules secondaires Download PDF

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Publication number
WO1996036053A1
WO1996036053A1 PCT/JP1995/000907 JP9500907W WO9636053A1 WO 1996036053 A1 WO1996036053 A1 WO 1996036053A1 JP 9500907 W JP9500907 W JP 9500907W WO 9636053 A1 WO9636053 A1 WO 9636053A1
Authority
WO
WIPO (PCT)
Prior art keywords
ion beam
objective lens
secondary particle
detector
sample
Prior art date
Application number
PCT/JP1995/000907
Other languages
English (en)
Japanese (ja)
Inventor
Hifumi Tamura
Hiroyuki Sumiya
Katsumi Muto
Original Assignee
Hitachi, Ltd.
Hitachi Instruments Engineering Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi, Ltd., Hitachi Instruments Engineering Co., Ltd. filed Critical Hitachi, Ltd.
Priority to PCT/JP1995/000907 priority Critical patent/WO1996036053A1/fr
Publication of WO1996036053A1 publication Critical patent/WO1996036053A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3005—Observing the objects or the point of impact on the object
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/25—Tubes for localised analysis using electron or ion beams
    • H01J2237/2505—Tubes for localised analysis using electron or ion beams characterised by their application
    • H01J2237/2516—Secondary particles mass or energy spectrometry
    • H01J2237/2527—Ions [SIMS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas

Definitions

  • the present invention relates to an ion beam irradiation device with a secondary particle detector and a secondary particle detection method.
  • SIMS secondary ion mass spectrometer
  • SIM Scanning Ion Microscope scanning ion microscope
  • FIB Focused Ion Beam a secondary ion mass spectrometer
  • SIMS the sample is irradiated with ions, and the secondary ions generated by the irradiation are analyzed by mass to identify the elements contained in the sample.
  • SIM the shape of the sample is observed by detecting secondary electrons generated from the sample.
  • FIB the sample is irradiated with ions again according to the observation result of the sample, and the sample is processed.
  • a general configuration is to extract ions from an ion source as a beam, focus the ions with a lens, irradiate the sample, and detect secondary particles generated from the sample.
  • the conventional technology is remarkable especially in the semiconductor field, but cannot be used in an ultra-small area. Since the ion beam cannot be narrowed in this way, for example, it was difficult to evaluate the characterization of an extremely small region required for various material evaluations in SIMS. Also, with SIM, it was difficult to evaluate the processing accuracy in the processing step in the ultra-fine area. Furthermore, in FIB, there is a limit to miniaturization of processing.
  • An object of the present invention is to improve the narrowing of an incident ion beam and to perform analysis of a very small area, observation of a fine structure, and ultrafine processing. Disclosure of the invention
  • the present invention provides a system in which ions from an ion source are focused on a lens group and irradiated on a sample, and secondary particles emitted from the sample are detected by a secondary particle detector.
  • the secondary particle detector was configured such that the secondary particle detector was arranged above the objective lens.
  • a magnetic field is formed near the sample, near the lens, or between the sample and the objective lens.
  • the distance between the objective lens and the sample is determined by the secondary particle detector. Therefore, the distance between the lens and the sample can be sufficiently reduced. Therefore, the focal length of the objective lens can be shortened, and accordingly, the spread of the beam due to various aberrations can be suppressed. As a result, the incident ion beam can be narrowed.
  • the secondary particles are subjected to a magnetic field confinement action, whereby the secondary particles are guided to the detector.
  • FIG. 1 is a diagram showing the entire apparatus (ion beam apparatus).
  • FIG. 2 is a diagram showing details of secondary particle detection.
  • FIG. 3 is a diagram showing details of the detector.
  • FIG. 4 is a diagram showing a second embodiment.
  • FIG. 5 is a diagram showing a third embodiment.
  • FIG. 6 is a diagram showing a fourth embodiment. BEST MODE FOR CARRYING OUT THE INVENTION
  • Fig. 1 is an overall view of the ion beam device.
  • Ga-LMIS Liquid Metal Ion Source
  • Duoplasmatron are mainly used as ion sources, and an ion beam is generated.
  • the ion beam 10 generated from the ion source 1 is guided to the condenser lens 4 through the condenser lens aperture 3, reduced, and further passes through the objective lens aperture 6 to enter the objective lens 7.
  • the objective lens 7 has a function of focusing the incident beam 10 on the sample 8.
  • Deflection voltage provided between condenser lens 4 and objective lens 7
  • the pole 5 has the role of deflecting and scanning the primary ion beam 10 on the sample under arbitrary conditions.
  • the scanning power supply 14 has a role for synchronously scanning the primary ion beam 10 and the electron beam of the CRT 10.
  • the first order beam 10 is subjected to CPU control, and is irradiated to an arbitrary position on the sample.
  • the present ion beam apparatus is used as a SIM or SIMS, it is controlled so that the ion beam 10 is scanned over an arbitrary predetermined area on the sample.
  • an ion beam 10 is irradiated to a predetermined position for repairing a circuit pattern.
  • a magnetic field generating coil 18 is provided outside the objective lens 7 and the sample 8 so as to surround them.
  • the secondary particles secondary ions in the SIMS, secondary electrons or secondary negative ions in the SIMS
  • the secondary particles are pinched by the magnetic field of the magnetic field generating coil 18 ( Utilizing the confinement effect, it is efficiently guided above the objective lens 7 (from the sample 8 to the ion source 1).
  • the secondary particles are guided by a deflecting magnetic field source 16 in a direction perpendicular to the ion beam, and are detected by a secondary particle detection system 17.
  • the signal of the secondary particle detection system 17 is amplified by the amplifier 15 and used as a video signal of the CRT 13 to form a secondary electron image.
  • the secondary particle detection system 17, SIM, and FIB are secondary electron or secondary negative ion detectors, and the secondary ion detection system is SIMS.
  • FIG. 2 shows the periphery of the objective lens shown in FIG. 1 in detail.
  • the secondary particle detection system 17 is a (secondary electron detection system or secondary ion detection system) objective lens 7, sample 8 vacuum housing 12, primary ion beam, secondary electron 11 and In the present invention And a secondary electron deflection electrode 16 and a secondary particle detector 17.
  • the magnetic field generating coil 18 is provided around the objective lens 7 and is provided inside the vacuum housing 12. As a result, a magnetic field distribution 19 in the same direction as the primary ion beam 11 is formed between the objective lens 7 and the sample 8.
  • a secondary electron deflection magnetic pole 16 and a secondary particle detection system 17 are mounted on the upper part of the objective lens 7.
  • the irradiation of the primary ion beam 10 causes the secondary particles to be guided to the upper part of the objective lens while performing cycloidal motion (pinched by the magnetic field) by the action of a magnetic field.
  • the radius r of the cycloid motion is determined by the following equation (1).
  • V is determined by the initial energy of the secondary electron and is about several volts.
  • the secondary electrons are guided to the upper part of the objective lens 7. Further, the secondary particles guided to the upper part of the objective lens 7 are guided in the vertical direction by the magnetic field of the deflecting magnetic field generation source 16, and are detected by the secondary particle detection system 17.
  • the magnetic field confinement region of the secondary electrons can be arbitrarily changed by changing the magnetic field strength.
  • the influence of the magnetic field on the primary ion beam focusing is particularly affected by the secondary electrons and secondary ions.
  • the energy is as small as a few eV and the secondary electrons are negligible, especially because the mass is smaller than Yon.
  • the secondary particle detection system 17 is a detector that combines a scintillator and a photomultiplier.
  • the secondary particle detection system 17 is a scintillator 17c, a metal vapor-deposited thin film 17a attached to the scintillator surface, a supporting electrode 17b for applying the post-acceleration voltage and supporting the scintillator 17c. It consists of a post-acceleration power supply 17e, a scintillator 1c, a metal-deposited thin film 17a, and a photomultiplier tube 17d.
  • a positive voltage of several 100 V to several kV is applied to the metal-deposited thin film 17 a adhered to the surface of the scintillator 17 c from the post-acceleration power supply 17 e through the support electrode 17 b through the support electrode 17 b. ing. Secondary electrons incident on the metal-deposited thin film 17 a are accelerated by the post-acceleration voltage at the subsequent stage, irradiate the scintillator 17 c, convert the electrons into light, and are detected by the photomultiplier tube 17 d. The output of the photomultiplier tube 17d is used for image formation as a video signal.
  • the sample position can approach the objective lens 7 to a desired distance, and the focal length of the objective lens 7 can be shortened.
  • the secondary particle detection system 17 was provided between the sample 8 and the objective lens 7 so that the focal length was at least about 30 mm.However, with this technique, the focal length can be reduced to 10 mm or less.
  • a current density of about 30 A / cm 2 was obtained, which was about three times higher, and the processing speed was improved about three times as compared with the Si sample. Also, the resolution of the scanned image was improved from 150 A to 30 A.
  • FIG. 4 differs from the first embodiment only in that the magnetic field generating coil 31 for confining the secondary particles is taken out of the vacuum.
  • the implementation results of this technique are exactly the same as in the first embodiment, and a description thereof will be omitted.In this case, since the confinement magnetic field generating coil 31 is taken out of the vacuum, it has a feature that the evacuation and the like are facilitated.
  • a third embodiment will be described with reference to FIG.
  • FIG. 5 the use of the solenoid coil 41 bent in an arc shape as a means for guiding the secondary particles 11 guided to the upper part of the objective lens 7 to the secondary particle detection system 17 is shown in Examples 1 and 2. Different from 2.
  • the primary ion beam passage of the solenoid coil 41 has a hole for passing the beam.
  • a magnetic field is formed along the axis of the solenoid coil 41,
  • the magnetic field generating coil 18 provided on the outer periphery of the sample 8 and the objective lens 7 was used for both installation in a vacuum and installation outside the vacuum (not shown) to obtain similar results.
  • the detection system is formed differently (that is, FIG. 6 shows a secondary particle detection system 17 using the secondary electron multiplier 51.
  • FIG. 6 shows a secondary particle detection system 17 using the secondary electron multiplier 51.
  • the configuration is shown in FIG. A commercially available secondary electron multiplier is used.
  • the detection of secondary particles by this detector is almost the same as in Examples 1 to 3 and is omitted here.
  • the effect that the objective lens 7 can be used at a short focus is as follows.
  • the refinement of the primary ion beam has been improved, and the processing miniaturization limit and SIM image (Scanning Ion microscopy Image) image resolution have been reduced by one-third and one-third, respectively. And reduced to about 1/5. Furthermore, since the signal is acquired from the same direction as the primary ion beam incident direction, the observation of the sample surface without shadows is possible, and the processing accuracy and the image quality of SIM have been significantly improved. In addition, the use of a short focus has become possible, the current density of the primary ion beam on the sample has been improved, and the processing speed in micromachining has been improved by about three times. In addition, the brightness of the SIM image was improved about three times. In addition, the limit of SIMS microanalysis has been improved from 1 O nm to 2 nm.
  • a secondary electron as a signal is guided to the upper part of the objective lens, and the sample and the objective lens space can be made a free space. Close to the lens.
  • the objective lens can be used with a short focal length, the beam divergence due to various aberrations is minimized, and the formation of a high-density microbeam is facilitated.
  • secondary electrons as signals are extracted from the primary ion beam irradiation direction, which has the characteristic that correct signals can be obtained.
  • the following effects can be practically obtained.
  • the purpose is microfabrication such as the fabrication of various microelements such as I C.
  • an incident beam can be narrowed, and it is possible to cope with a miniaturized region, which is useful for an apparatus and a method using an ion beam.

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)

Abstract

La présente invention concerne un émetteur de faisceaux ioniques destiné à produire un faisceau ionique mince de haute densité utilisé pour le micro-usinage et l'observation d'une image d'ions secondaires à haute résolution (image SIM ou 'Scanning Ion Microscope', soit par microscope à balayage ionique). Ledit émetteur comporte un solénoïde (18) entourant un échantillon (8) et une lentille d'objectif (7), et produit un champ magnétique dans la même direction que celle de l'axe du faisceau d'ions; ainsi qu'un système de détection (17) de particules secondaires disposé sur la lentille (7) pour détecter les électrons secondaires. Etant donné que l'échantillon (8) peut être placé à proximité de la lentille (7) dans cette configuration, ladite lentille (7) peut être utilisée pour une mise au point de courte longueur focale, ce qui permet ainsi de former un faisceau mince à haute densité. Grâce à la présente invention, il est possible d'effectuer un micro-usinage de haute précision et de réaliser une observation d'image à haute sensibilité et à haute résolution.
PCT/JP1995/000907 1995-05-12 1995-05-12 Emetteur de faisceaux ioniques pourvu d'un detecteur de particules secondaires et procede de detection de particules secondaires WO1996036053A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/JP1995/000907 WO1996036053A1 (fr) 1995-05-12 1995-05-12 Emetteur de faisceaux ioniques pourvu d'un detecteur de particules secondaires et procede de detection de particules secondaires

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP1995/000907 WO1996036053A1 (fr) 1995-05-12 1995-05-12 Emetteur de faisceaux ioniques pourvu d'un detecteur de particules secondaires et procede de detection de particules secondaires

Publications (1)

Publication Number Publication Date
WO1996036053A1 true WO1996036053A1 (fr) 1996-11-14

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59134540A (ja) * 1983-01-21 1984-08-02 Hitachi Ltd 二次電子検出装置
JPH01296555A (ja) * 1988-05-25 1989-11-29 Hitachi Ltd 集束イオンビーム装置
JPH025337A (ja) * 1988-03-09 1990-01-10 Seiko Instr Inc 荷電粒子線装置及びこれによる試料観察方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59134540A (ja) * 1983-01-21 1984-08-02 Hitachi Ltd 二次電子検出装置
JPH025337A (ja) * 1988-03-09 1990-01-10 Seiko Instr Inc 荷電粒子線装置及びこれによる試料観察方法
JPH01296555A (ja) * 1988-05-25 1989-11-29 Hitachi Ltd 集束イオンビーム装置

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