WO1997035045B1 - Interiorly partitioned vapor injector for delivery of source reagent vapor mixtures for chemical vapor deposition - Google Patents
Interiorly partitioned vapor injector for delivery of source reagent vapor mixtures for chemical vapor depositionInfo
- Publication number
- WO1997035045B1 WO1997035045B1 PCT/US1997/005690 US9705690W WO9735045B1 WO 1997035045 B1 WO1997035045 B1 WO 1997035045B1 US 9705690 W US9705690 W US 9705690W WO 9735045 B1 WO9735045 B1 WO 9735045B1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- housing
- interior volume
- baffle plate
- showerhead
- front wall
- Prior art date
Links
- 239000000203 mixture Substances 0.000 title claims abstract 11
- 239000003153 chemical reaction reagent Substances 0.000 title claims 15
- 238000005229 chemical vapour deposition Methods 0.000 title claims 4
- 239000012530 fluid Substances 0.000 claims abstract 34
- 238000007599 discharging Methods 0.000 claims abstract 5
- 239000000758 substrate Substances 0.000 claims 17
- 238000000034 method Methods 0.000 claims 8
- 239000002243 precursor Substances 0.000 claims 8
- 238000000151 deposition Methods 0.000 claims 3
- 239000007800 oxidant agent Substances 0.000 claims 3
- 230000001590 oxidative effect Effects 0.000 claims 3
- 230000004323 axial length Effects 0.000 claims 2
- 230000008021 deposition Effects 0.000 claims 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 1
- 229910052746 lanthanum Inorganic materials 0.000 claims 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 229910052712 strontium Inorganic materials 0.000 claims 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
- 239000010409 thin film Substances 0.000 abstract 1
Abstract
A shower disperser (2) for mixing plural vapor streams, comprising: a housing (10) including front and rear walls (12, 14) and a side wall (16) therebetween, defining an interior volume (15); the front wall having a muliplicity of vapor mixture discharge openings (20) therein, for discharging mixed vapor from the housing, flow passages (24) joined to the housing for introducing fluids into the housing; and at least one baffle plate (18) mounted in the interior volume of the housing, the baffle plate and side wall forming an annular flow passage (21) therebetween and the baffle plate having at least one of the respective fluids directed thereagainst upon introduction to the interior volume of the housing, for distribution thereof in the interior volume of the housing. The baffled showerhead disperser is usefully employed to form thin films by CVD of highly uniform composition and thickness.
Claims
1. A showerhead disperser device for mixing plural fluid streams, comprising:
a housing including front and rear walls in spaced apart relation to one another, and a side wall therebetween, defining within the housing an interior volume;
the front wall having a multiplicity of mixed fluid discharge openings therein, for discharging mixed fluid from the interior volume of the housing exteriorly thereof;
flow passages joined to the housing for introducing into the interior volume of the housing respective fluids to be mixed therein; and
at least one baffle plate mounted in the interior volume of the housing, intermediate the front and rear walls of the housing, the baffle plate having an edge in spaced relation to the side wall to form an annular flow passage therebetween and the baffle plate having at least one of the respective fluids directed against a central portion thereof upon introduction thereof through one of the flow passages to the interior volume of the housing, for outward flow thereof towards the annular flow passage and subsequent distribution thereof in the interior volume of the housing;
another of said flow passages introducing at least another of the respective fluids for flow into the annular flow passage against the outwardly flowing fluid and mixing therebetween in the annular flow passage, forming mixed fluid for flow through the interior volume of the housing to the front wall thereof and discharge through the mixed fluid discharge openings in said front wall.
34 O 97/35045 97/ 5 90
2. A showerhead disperser according to claim 1, wherein the housing has a constant cross-section in an axial direction thereof.
3. A showerhead disperser according to claim 2, wherein the housing cross- section has a shape selected from the group consisting of circular, square, rectangular, hexagonal, and octagonal.
4. The device as set forth in claim 1, wherein the flow passages comprise a feed ring circumscribing the housing for introducing said at least another of the respective fluids into the annular flow passage against the outwardly flowing fluid for mixing therebetween in the annular flow passage.
5. A showerhead disperser according to claim 1, wherein said another of said flow passages introduces at least another of the respective fluids into the annular flow passage in an opposite flow direction for impingement against the outwardly flowing fluid and mixing therebetween in the annular flow passage, forming mixed fluid for flow through the interior volume of the housing to the front wall thereof and discharge through the mixed fluid discharge openings in said front wall.
6. A showerhead disperser device for mixing plural vapor streams, comprising:
a housing including front and rear walls in spaced apart relation to one another, and a side wall therebetween, defining within the housing an interior volume-
the front wall having a multiplicity of vapor mixture discharge openings therein, for discharging mixed vapor from the interior volume of the housing exteriorly thereof,
35 flow passages joined to the housing for introducing into the interior volume of the housing respective fluids to be mixed therein; and
two baffle plates mounted in the interior volume of the housing, in axially spaced apart relationship to one another and to the front and rear walls of the housing2 each baffle plate having an edge in spaced relation to the side wall to form an annular flow passage therebetween and each baffle plate having respectively different ones of the respective fluids directed thereagainst upon introduction to the interior volume of the housing, for outward flow thereof to the annular flow passage and mixing of the respective fluids in the annular flow passage, forming mixed fluid for flow through the interior volume of the housing to the front wall thereof and discharge through the mixed fluid discharge openings in said front wall.
7. A showerhead disperser according to claim 1 , wherein the baffle plate is perforate, having an array of vapor flow openings therethrough.
8. A showerhead disperser according to claim 1 , wherein the baffle plate is imperforate.
9. A showerhead disperser according to claim 6, wherein each of the baffle plates is imperforate.
10. A showerhead disperser according to claim 1 , wherein the side wall is cylindrical, and the housing has a uniform circular cross-section.
11. A showerhead disperser according to claim 1, of a predetermined size and shape with respect to the following variables:
interior volume of the housing, Vi; lateral dimension of the housing, D; interior axial length of the housing from the rear wall to the front wall, L; total cross-sectional area of baffle plate(s), Ab; baffle plate(s) thickness, t; baffle plate position along the z-axis of the housing, z/L, measured from the front wall of the housing; diameter of the baffle plate openings when the baffle plate is of perforated character, d;
wherein the showerhead disperser is constructed and arranged to satisfy at least one of the following parametric criteria:
2,000 < Vi < 106 cm3;
D > 20 cm.;
2<L<15 cm.
500 < Ab < 2,000 cm2;
0.05 < t < 5 cm;
0.2 < z/L < 0.8; and
0.8 < d/D < 1.
12. A showerhead disperser according to claim 1, wherein the showerhead disperser is constructed and arranged to satisfy all of said parametric criteria.
37
13. A showerhead disperser according to claim 11, wherein L/D is less than 1.0.
14. A showerhead disperser according to claim 1 1 , wherein L/D is in the range of from 0.05 to 0.80.
15. A CVD system including a showerhead discharge device for delivering a source reagent vapor comprising a mixture of oxidant and precursor reagent to a CVD reactor for deposition on a substrate therein, said showerhead discharge device comprising:
a housing including front and rear walls in spaced apart relation to one another, and a side wall therebetween, defining within the housing an interior volume;
the front wall having a multiplicity of mixed fluid discharge openings therein, for discharging mixed fluid from the interior volume of the housing exteriorly thereof;
flow passages joined to the housing for introducing into the interior volume of the housing respective fluids to be mixed therein; and
at least one baffle plate mounted in the interior volume of the housing, intermediate the front and rear walls of the housing, the baffle plate having an edge in spaced relation to the side wall to form an annular flow passage therebetween and the baffle plate having at least one of the respective fluids directed against a central portion thereof upon introduction thereof through one of the flow passages to the interior volume of the housing, for outward flow thereof towards the annular flow passage and subsequent distribution thereof in the interior volume of the housing;
another of said flow passages introducing at least another of the respective fluids for flow into the annular flow passage against the outwardly flowing fluid for mixing therebetween in the annular flow passage, to form mixed fluid flowed through
38 the interior volume of the housing to the front wall thereof for discharge through the mixed fluid discharge openings in said front wall;
a source of precursor reagent(s) and a second vapor to be mixed in the disperser housing interior volume with the precursor reagent(s) to form a source reagent vapor mixture, joined in supply relationship to said flow passages;
a CVD reactor having a substrate mount therein;
the housing being arranged in vapor discharge relationship to the substrate mount in the CVD reactor, for flow of the source reagent vapor mixture to a substrate mounted on the substrate mount, for deposition of selected component(s) of the precursor reagent(s) on the substrate.
16. A CVD system according to claim 15, wherein the substrate mount and the showerhead discharge device are arranged such that the substrate mount is coaxially and parailelly arranged with respect to the disperser housing front wall along a flow path of the source reagent vapor mixture.
17. A CVD system according to claim 16, wherein the ratio of lateral dimension of the housing, D, to axial spacing distance, B, between the front wall of the showerhead discharge device housing and the substrate mount, with both being measured in the same dimensional units, is:
3 < D/B < 12.
18. A CVD system according to claim 17, wherein the ratio of lateral dimension of the housing, D, to axial spacing distance, B, between the front wall of the showerhead
39 discharge device housing and the substrate mount, with both being measured in the same dimensional units, is:
4 < D/B < 8.
19. A method of delivery of source reagent vapor mixtures, comprising one or more precursor reagents in mixture with oxidant and/or carrier, to a chemical vapor deposition locus, for chemical vapor deposition on a substrate of selected component(s) of the precursor reagent(s), said method comprising mixing the precursor reagent(s) with oxidant and/or carrier in a baffled showerhead disperser device according to claim 1 , discharging source reagent vapor mixture from said baffled showerhead disperser device for transport to the substrate, and depositing said selected component(s) of the precursor reagent(s) on said substrate.
20. A method according to claim 19, wherein said chemical vapor deposition on a substrate comprises forming on said substrate a film of a material selected from the group consisting of BT, ST, PLT, SBTa, PZT, and PLZT, wherein S=strontium,Ta=tantalate, T=titanate, P=lead, Z=zirconium, and L=lanthanum.
21. A method according to claim 19, wherein said baffled showerhead disperser is constructed and arranged such that another of said flow passages introduces at least another of the respective fluids into the annular flow passage in an opposite flow direction for impingement against the outwardly flowing fluid and mixing therebetween in the annular flow passage, forming mixed fluid for flow through the interior volume of the housing to the front wall thereof and discharge through the mixed fluid discharge openings in said front wall.
22. A method according to claim 19, wherein the baffled showerhead disperser device is of a predetermined size and shape with respect to the following variables:
40 W
interior volume of the housing, Vi; lateral dimension of the housing, D; interior axial length of the housing from the rear wall to the front wall, L; total cross-sectional area of baffle plate(s), Ab; baffle plate(s) thickness, t; baffle plate position along the z-axis of the housing, z/L, measured from the front wall of the housing; diameter of the baffle plate openings when the baffle plate is of perforate character, d;
wherein the showerhead disperser is constructed and arranged to satisfy at least one of the following parametric criteria:
2,000 < Vi 106 cm3;
D > 20 cm.
2<L<15 cm.;
500 < Ab < 2,000 cm2;
0.05 < t < 5 cm;
0.2 < z/L < 0.8; and
0.8 < d/D < l .
41
23. A method according to claim 22, wherein the baffled showerhead discharge device is constructed and arranged to satisfy all of said parametric criteria.
24. A method according to claim 22, wherein the ratio of lateral dimension of the housing, D, to axial spacing distance, B, between the front wall of the showerhead disperser device housing and the substrate, with both being measured in the same dimensional units, is:
3 < D/B < 12.
25. A method according to claim 22, wherein the ratio of lateral dimension of the housing, D, to axial spacing distance, B, between the front wall of the showerhead disperser device housing and the substrate, with both being measured in the same dimensional units, is:
4 < D/B < 8.
42
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US621,088 | 1996-03-22 | ||
US08/621,088 US5741363A (en) | 1996-03-22 | 1996-03-22 | Interiorly partitioned vapor injector for delivery of source reagent vapor mixtures for chemical vapor deposition |
Publications (2)
Publication Number | Publication Date |
---|---|
WO1997035045A1 WO1997035045A1 (en) | 1997-09-25 |
WO1997035045B1 true WO1997035045B1 (en) | 1997-11-13 |
Family
ID=24488662
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1997/005690 WO1997035045A1 (en) | 1996-03-22 | 1997-03-24 | Interiorly partitioned vapor injector for delivery of source reagent vapor mixtures for chemical vapor deposition |
Country Status (2)
Country | Link |
---|---|
US (2) | US5741363A (en) |
WO (1) | WO1997035045A1 (en) |
Families Citing this family (47)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5882416A (en) * | 1997-06-19 | 1999-03-16 | Advanced Technology Materials, Inc. | Liquid delivery system, heater apparatus for liquid delivery system, and vaporizer |
US5968275A (en) * | 1997-06-25 | 1999-10-19 | Lam Research Corporation | Methods and apparatus for passivating a substrate in a plasma reactor |
US6277436B1 (en) | 1997-11-26 | 2001-08-21 | Advanced Technology Materials, Inc. | Liquid delivery MOCVD process for deposition of high frequency dielectric materials |
US6210485B1 (en) | 1998-07-21 | 2001-04-03 | Applied Materials, Inc. | Chemical vapor deposition vaporizer |
US6190732B1 (en) | 1998-09-03 | 2001-02-20 | Cvc Products, Inc. | Method and system for dispensing process gas for fabricating a device on a substrate |
US6300255B1 (en) * | 1999-02-24 | 2001-10-09 | Applied Materials, Inc. | Method and apparatus for processing semiconductive wafers |
US6444039B1 (en) | 2000-03-07 | 2002-09-03 | Simplus Systems Corporation | Three-dimensional showerhead apparatus |
KR100406176B1 (en) * | 2000-06-19 | 2003-11-19 | 주식회사 하이닉스반도체 | Showerhead and an Apparatus for Supplying a Liquid Raw Materials Using the Same |
US6793966B2 (en) | 2001-09-10 | 2004-09-21 | Howmet Research Corporation | Chemical vapor deposition apparatus and method |
US20030101587A1 (en) * | 2001-10-22 | 2003-06-05 | Rigney Joseph David | Method for replacing a damaged TBC ceramic layer |
KR100447248B1 (en) * | 2002-01-22 | 2004-09-07 | 주성엔지니어링(주) | Gas diffusion plate for use in ICP etcher |
US20040002299A1 (en) * | 2002-06-27 | 2004-01-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Ventilation system and method of using |
JP2004035971A (en) * | 2002-07-05 | 2004-02-05 | Ulvac Japan Ltd | Thin film manufacturing apparatus |
US20040118519A1 (en) * | 2002-12-20 | 2004-06-24 | Applied Materials, Inc. | Blocker plate bypass design to improve clean rate at the edge of the chamber |
JP4026529B2 (en) * | 2003-04-10 | 2007-12-26 | 東京エレクトロン株式会社 | Shower head structure and processing apparatus |
US20040235299A1 (en) * | 2003-05-22 | 2004-11-25 | Axcelis Technologies, Inc. | Plasma ashing apparatus and endpoint detection process |
US8580076B2 (en) * | 2003-05-22 | 2013-11-12 | Lam Research Corporation | Plasma apparatus, gas distribution assembly for a plasma apparatus and processes therewith |
WO2004109761A2 (en) * | 2003-05-30 | 2004-12-16 | Aviza Technology Inc. | Gas distribution system |
JP2005159293A (en) * | 2003-09-18 | 2005-06-16 | Nec Kagoshima Ltd | Device and method for treating substrate |
KR100450643B1 (en) * | 2003-09-26 | 2004-10-01 | 코닉시스템 주식회사 | Plasma rapid thermal process apparatus |
JP4698251B2 (en) * | 2004-02-24 | 2011-06-08 | アプライド マテリアルズ インコーポレイテッド | Movable or flexible shower head mounting |
US20050223984A1 (en) * | 2004-04-08 | 2005-10-13 | Hee-Gyoun Lee | Chemical vapor deposition (CVD) apparatus usable in the manufacture of superconducting conductors |
US20050223983A1 (en) * | 2004-04-08 | 2005-10-13 | Venkat Selvamanickam | Chemical vapor deposition (CVD) apparatus usable in the manufacture of superconducting conductors |
US7572337B2 (en) * | 2004-05-26 | 2009-08-11 | Applied Materials, Inc. | Blocker plate bypass to distribute gases in a chemical vapor deposition system |
US7622005B2 (en) * | 2004-05-26 | 2009-11-24 | Applied Materials, Inc. | Uniformity control for low flow process and chamber to chamber matching |
US7780787B2 (en) * | 2004-08-11 | 2010-08-24 | First Solar, Inc. | Apparatus and method for depositing a material on a substrate |
US7387811B2 (en) * | 2004-09-21 | 2008-06-17 | Superpower, Inc. | Method for manufacturing high temperature superconducting conductors using chemical vapor deposition (CVD) |
US20070231489A1 (en) * | 2006-03-29 | 2007-10-04 | Tokyo Electron Limited | Method for introducing a precursor gas to a vapor deposition system |
EP1968098A1 (en) * | 2007-03-08 | 2008-09-10 | Applied Materials, Inc. | Suction device for plasma coating chamber |
US8673080B2 (en) | 2007-10-16 | 2014-03-18 | Novellus Systems, Inc. | Temperature controlled showerhead |
US20090095221A1 (en) * | 2007-10-16 | 2009-04-16 | Alexander Tam | Multi-gas concentric injection showerhead |
US20090120364A1 (en) * | 2007-11-09 | 2009-05-14 | Applied Materials, Inc. | Gas mixing swirl insert assembly |
US20090211707A1 (en) * | 2008-02-22 | 2009-08-27 | Hermes Systems Inc. | Apparatus for gas distribution and its applications |
JP4731580B2 (en) * | 2008-03-27 | 2011-07-27 | 東京エレクトロン株式会社 | Film forming method and film forming apparatus |
US8252114B2 (en) * | 2008-03-28 | 2012-08-28 | Tokyo Electron Limited | Gas distribution system and method for distributing process gas in a processing system |
KR101004927B1 (en) * | 2008-04-24 | 2010-12-29 | 삼성엘이디 주식회사 | Shower head for CWD and chemical vapor deposition apparatus having same |
DE102010000388A1 (en) | 2010-02-11 | 2011-08-11 | Aixtron Ag, 52134 | Gas inlet element with baffle plate arrangement |
US9441296B2 (en) | 2011-03-04 | 2016-09-13 | Novellus Systems, Inc. | Hybrid ceramic showerhead |
US9129778B2 (en) | 2011-03-18 | 2015-09-08 | Lam Research Corporation | Fluid distribution members and/or assemblies |
KR102376429B1 (en) * | 2013-12-18 | 2022-03-17 | 램 리써치 코포레이션 | Seminconductor substrate processing apparatus including uniformity baffles |
US10741365B2 (en) * | 2014-05-05 | 2020-08-11 | Lam Research Corporation | Low volume showerhead with porous baffle |
US9793096B2 (en) * | 2014-09-12 | 2017-10-17 | Lam Research Corporation | Systems and methods for suppressing parasitic plasma and reducing within-wafer non-uniformity |
US10378107B2 (en) | 2015-05-22 | 2019-08-13 | Lam Research Corporation | Low volume showerhead with faceplate holes for improved flow uniformity |
US10023959B2 (en) | 2015-05-26 | 2018-07-17 | Lam Research Corporation | Anti-transient showerhead |
US11598003B2 (en) * | 2017-09-12 | 2023-03-07 | Applied Materials, Inc. | Substrate processing chamber having heated showerhead assembly |
TWI685583B (en) * | 2019-03-22 | 2020-02-21 | 漢民科技股份有限公司 | Metal-organic chemical vapor deposition device |
KR20220052996A (en) | 2019-08-28 | 2022-04-28 | 램 리써치 코포레이션 | metal deposition |
Family Cites Families (48)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3098763A (en) * | 1961-05-29 | 1963-07-23 | Raytheon Co | Chemical reactor |
FR1597833A (en) * | 1968-01-15 | 1970-06-29 | ||
US3517643A (en) * | 1968-11-25 | 1970-06-30 | Sylvania Electric Prod | Vapor deposition apparatus including diffuser means |
JPS6047202B2 (en) * | 1976-01-13 | 1985-10-21 | 東北大学金属材料研究所長 | Super hard high purity oriented polycrystalline silicon nitride |
JPS5391764A (en) * | 1977-01-21 | 1978-08-11 | Mitsubishi Electric Corp | Moving direction detector |
JPS55123709A (en) * | 1979-03-16 | 1980-09-24 | Omron Tateisi Electronics Co | Alternating current constant-voltage unit |
US4313783A (en) * | 1980-05-19 | 1982-02-02 | Branson International Plasma Corporation | Computer controlled system for processing semiconductor wafers |
JPS5748226A (en) * | 1980-09-05 | 1982-03-19 | Matsushita Electronics Corp | Plasma processing method and device for the same |
CH640571A5 (en) * | 1981-03-06 | 1984-01-13 | Battelle Memorial Institute | METHOD AND DEVICE FOR DEPOSITING A LAYER OF MINERAL MATERIAL ONTO A SUBSTRATE. |
JPS58170536A (en) * | 1982-03-31 | 1983-10-07 | Fujitsu Ltd | Plasma treatment method and device |
JPS6098629A (en) * | 1983-11-02 | 1985-06-01 | Hitachi Ltd | plasma processing equipment |
JPS60202937A (en) * | 1984-03-28 | 1985-10-14 | Hitachi Ltd | Dry etching device |
JPS6187319A (en) * | 1984-10-05 | 1986-05-02 | Hitachi Ltd | Chemical vapor deposition equipment using plasma |
JPS61175148A (en) * | 1985-01-29 | 1986-08-06 | Tokyo Tatsuno Co Ltd | Oil station |
CA1272661A (en) * | 1985-05-11 | 1990-08-14 | Yuji Chiba | Reaction apparatus |
US4798165A (en) * | 1985-10-07 | 1989-01-17 | Epsilon | Apparatus for chemical vapor deposition using an axially symmetric gas flow |
AT386315B (en) * | 1985-11-04 | 1988-08-10 | Voest Alpine Ag | PLASMA REACTOR TO ASSEMBLE PCB |
JPS62136871A (en) * | 1985-12-11 | 1987-06-19 | Canon Inc | Optical sensor, its manufacturing method and its manufacturing device |
JPH074523B2 (en) * | 1986-09-25 | 1995-01-25 | キヤノン株式会社 | Reactor |
US5000113A (en) * | 1986-12-19 | 1991-03-19 | Applied Materials, Inc. | Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process |
US4807562A (en) * | 1987-01-05 | 1989-02-28 | Norman Sandys | Reactor for heating semiconductor substrates |
JPS63227011A (en) * | 1987-03-17 | 1988-09-21 | Fujitsu Ltd | chemical vapor deposition equipment |
DE3715644A1 (en) * | 1987-05-11 | 1988-12-01 | Fraunhofer Ges Forschung | MOLECULAR BEAM EPITAXY SYSTEM |
US4820371A (en) * | 1987-12-15 | 1989-04-11 | Texas Instruments Incorporated | Apertured ring for exhausting plasma reactor gases |
JPH01168022A (en) * | 1987-12-23 | 1989-07-03 | Sumitomo Electric Ind Ltd | Vapor phase growth equipment |
JPH0273624A (en) * | 1988-09-08 | 1990-03-13 | Fujitsu Ltd | Gas guiding device for cvd use |
JPH02222134A (en) * | 1989-02-23 | 1990-09-04 | Nobuo Mikoshiba | Thin film forming equipment |
WO1990010092A1 (en) * | 1989-02-24 | 1990-09-07 | Massachusetts Institute Of Technology | A modified stagnation flow apparatus for chemical vapor deposition providing excellent control of the deposition |
US4987856A (en) * | 1989-05-22 | 1991-01-29 | Advanced Semiconductor Materials America, Inc. | High throughput multi station processor for multiple single wafers |
US4993358A (en) * | 1989-07-28 | 1991-02-19 | Watkins-Johnson Company | Chemical vapor deposition reactor and method of operation |
FR2653633B1 (en) * | 1989-10-19 | 1991-12-20 | Commissariat Energie Atomique | CHEMICAL TREATMENT DEVICE ASSISTED BY A DIFFUSION PLASMA. |
US5186756A (en) * | 1990-01-29 | 1993-02-16 | At&T Bell Laboratories | MOCVD method and apparatus |
US5106453A (en) * | 1990-01-29 | 1992-04-21 | At&T Bell Laboratories | MOCVD method and apparatus |
KR940002439B1 (en) * | 1990-03-09 | 1994-03-24 | 니뽄 덴신 덴와 가부시끼가이샤 | Metal thin film growth method and apparatus |
DE4011933C2 (en) * | 1990-04-12 | 1996-11-21 | Balzers Hochvakuum | Process for the reactive surface treatment of a workpiece and treatment chamber therefor |
US5212116A (en) * | 1990-06-18 | 1993-05-18 | At&T Bell Laboratories | Method for forming planarized films by preferential etching of the center of a wafer |
JPH04219301A (en) * | 1990-07-25 | 1992-08-10 | Semiconductor Energy Lab Co Ltd | Production of oxide superconductor thin film |
US5174825A (en) * | 1990-08-23 | 1992-12-29 | Texas Instruments Incorporated | Uniform gas distributor to a wafer |
US5268034A (en) * | 1991-06-25 | 1993-12-07 | Lsi Logic Corporation | Fluid dispersion head for CVD appratus |
US5286519A (en) * | 1991-06-25 | 1994-02-15 | Lsi Logic Corporation | Fluid dispersion head |
US5134963A (en) * | 1991-10-28 | 1992-08-04 | International Business Machines Corporation | LPCVD reactor for high efficiency, high uniformity deposition |
US5387289A (en) * | 1992-09-22 | 1995-02-07 | Genus, Inc. | Film uniformity by selective pressure gradient control |
US5453347A (en) * | 1992-11-02 | 1995-09-26 | Radiant Technologies | Method for constructing ferroelectric capacitors on integrated circuit substrates |
JP2684942B2 (en) * | 1992-11-30 | 1997-12-03 | 日本電気株式会社 | Chemical vapor deposition method, chemical vapor deposition apparatus, and method for manufacturing multilayer wiring |
US5412670A (en) * | 1992-11-30 | 1995-05-02 | Ricoh Corporation | N-bit parity neural network encoder |
US5453124A (en) * | 1992-12-30 | 1995-09-26 | Texas Instruments Incorporated | Programmable multizone gas injector for single-wafer semiconductor processing equipment |
JP3328389B2 (en) * | 1993-09-14 | 2002-09-24 | 康夫 垂井 | Manufacturing method of ferroelectric thin film |
DE69408405T2 (en) * | 1993-11-11 | 1998-08-20 | Nissin Electric Co Ltd | Plasma CVD method and device |
-
1996
- 1996-03-22 US US08/621,088 patent/US5741363A/en not_active Expired - Lifetime
-
1997
- 1997-03-24 WO PCT/US1997/005690 patent/WO1997035045A1/en active Application Filing
-
1998
- 1998-02-03 US US09/017,384 patent/US6010748A/en not_active Expired - Fee Related
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