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WO1997035177A1 - Determination de parametres caracteristiques par lumiere polarisee - Google Patents

Determination de parametres caracteristiques par lumiere polarisee Download PDF

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Publication number
WO1997035177A1
WO1997035177A1 PCT/AU1997/000181 AU9700181W WO9735177A1 WO 1997035177 A1 WO1997035177 A1 WO 1997035177A1 AU 9700181 W AU9700181 W AU 9700181W WO 9735177 A1 WO9735177 A1 WO 9735177A1
Authority
WO
WIPO (PCT)
Prior art keywords
light
polarisation
directing
monitoring
processing
Prior art date
Application number
PCT/AU1997/000181
Other languages
English (en)
Inventor
Jacek Michal Misiura
Original Assignee
Leotek Pty. Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Leotek Pty. Ltd. filed Critical Leotek Pty. Ltd.
Priority to KR1019980707424A priority Critical patent/KR20000064701A/ko
Priority to AU20186/97A priority patent/AU2018697A/en
Priority to IL12628997A priority patent/IL126289A0/xx
Priority to JP53298597A priority patent/JP2001519891A/ja
Publication of WO1997035177A1 publication Critical patent/WO1997035177A1/fr

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21—Polarisation-affecting properties
    • G01N21/211—Ellipsometry
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0641—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of polarization
    • G01B11/065—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of polarization using one or more discrete wavelengths
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21—Polarisation-affecting properties
    • G01N2021/216—Polarisation-affecting properties using circular polarised light
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21—Polarisation-affecting properties
    • G01N2021/217—Measuring depolarisation or comparing polarised and depolarised parts of light
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/06—Illumination; Optics
    • G01N2201/061—Sources
    • G01N2201/06113—Coherent sources; lasers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/12—Circuits of general importance; Signal processing
    • G01N2201/123—Conversion circuit

Definitions

  • THIS INVENTION relates to a method and apparatus for in-situ determination
  • a beam of polarised light is directed onto a changing surface.
  • the beam interacts with the surface which results in a change in the
  • a suitable light source usually a laser
  • a pola ⁇ ser to produce
  • polarisation is obtained by a polarisation analyser followed by a photodetector
  • the polarisation analyser is commonly a rotating pola ⁇ ser and the
  • photodetector is commonly a photomultiplier.
  • Reflection ellipsometry is used for the study of surfaces and thin films.
  • the technique can be used to determine the parameters of surface growth (eg. Oxidation, deposition, adsorption, diffusion, etc) or surface removal (eg.
  • ellipsometry involves the measurement of tan ⁇ , the change
  • the refractive index of the substrate the wavelength of light used, the
  • polariser is at angle A ⁇ .
  • Another approach is to provide multiple ellipsometers with identical set-
  • the present invention resides in a method of in-
  • the present invention resides in a
  • the step of analysing light reflected from the material may further include the step of directing the reflected light through a rotating analyser or
  • means may suitably be performed in a computer using ellipsometric equations.
  • deposition rate can also be calculated.
  • the material is
  • the material can be identified.
  • the surface temperature can also be calculated
  • the method may further include the step of for example performing a
  • the obtained periodicity may suitably be calculated by curve fitting
  • the step of directing light of known polarisation at the material may
  • each beam may be at a
  • the present invention resides in an apparatus
  • Figure 1 is schematic of an apparatus for determining and/or monitoring
  • Figure 2 shows a periodic nature of polarisation state with surface layer thickness
  • Figure 3 shows determination of real time etch rate according to the
  • Figures 4, 5 and 6 show determination of etch endpoint detection
  • FIG. 1 there is shown an apparatus for determining
  • the apparatus comprises a source of
  • coherent light 1 which in this case is a laser.
  • the source 1 is Helium Neon laser, model LGR 7631 A from Siemens.
  • the source 1 is Helium Neon laser, model LGR 7631 A from Siemens.
  • the state of polarisation of the incident beam 3 is determined by fixed
  • the incident beam 3 may be linearly polarised, elliptically
  • fixed polariser 5 may be incorporated in the laser 1 so that a separate element
  • the incident beam impinges upon the semiconductor wafer 6 at an
  • the rotating polariser 7 rotates at a known frequency determined by the
  • the polariser has two speeds, fast (3 Hz) and slow (1 .5 Hz). Although a rotating polariser is
  • polariser adjacent the source may rotate and the polariser adjacent the detector
  • This arrangement may be fixed. This arrangement may have advantage in a multiple beam
  • a laser line interference filter 9 filters certain optical noise from the
  • a detector 1 1 produces an analog signal 12 proportional to the intensity of light incident on the detector 1 1 .
  • the detector 1 1 is
  • the detector 1 1 is a Hammamatsu photomultiplier and the power supply 1 3 is a high voltage
  • the signal 12 is converted from analog to digital in a PCL718 A/D
  • the digital signal 1 5 is processed in a computer 16.
  • Input optical window 20 and exit optical window 21 are mounted.
  • the wafer 6 has a polysilicon layer on top of a Si0 2
  • Polysilicon has a refractive index N 2 of 3.6 and Si0 2 has a refractive
  • the laser is adjusted for a wavelength ⁇ of 632.8 nm and an incident angle of 70° at the surface of the polysilicon layer. Phases shift ⁇
  • N refractive index
  • the inventor has found that the polarisation state of the reflected laser light various periodically with the change in thickness of the surface layer of
  • Figure 2 shows the periodic nature of ⁇ and ⁇ for the
  • the apparatus described above is used to monitor the polarisation state
  • the resultant plot is periodic with the period equals to the time it takes
  • E r is the etch rate
  • T c is the characteristic thickness
  • P is the time
  • the function of the wavelength is less for
  • the etch rate can be displayed as a plot of etch rate versus plasma
  • the plasma chamber pressure was 200mT, the gas flow was SF 5 at 20 seem and
  • the periodicities can be any periodicities of the periodicities of the individual components.
  • the periodicities can be any periodicities of the periodicities of the individual components.
  • the periodicities can be any periodicities of the periodicities of the individual components.
  • End point can be determined by monitoring the differential change in
  • End point can also be determined by directly monitoring the polarisation
  • Figure 5 shows a plot of polarisation state ( in this case ⁇ is
  • Figure 6 shows a plot of polarisation state ⁇ against time.
  • the method can also be applied to the measurement of the surface
  • the characteristic thickness is a function of refractive index which is temperature dependent.
  • method and apparatus can be extended to multiple beam systems. This may be useful if monitoring of a large wafer is to occur at a number of points across the
  • each light source may be incident at the material at a different angle
  • the invention conceives that the technique can be applied to at least the following situations:

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

On surveille l'interaction du plasma et d'une surface solide (durant l'attaque ou le dépôt) en utilisant l'effet de changements de l'état de polarisation de la lumière. Les paramètres physiques du substrat varient durant le traitement au plasma. La lumière surveillée est représentative de la composition du substrat en surface comme des modifications, survenues dans la composition, associées au traitement au plasma. On analyse la lumière refléchie par la surface au moyen d'un système communément utilisé en ellipsométrie, mais que l'on a modifié en faisant intervenir une nouvelle méthode de calcul. On utilise la périodicité de l'état de la polarisation de la lumière comme point de référence pour surveiller les occurrences en surface en temps réel. On effectue également une analyse chimique quantitative et qualitative de la surface du substrat.
PCT/AU1997/000181 1996-03-19 1997-03-19 Determination de parametres caracteristiques par lumiere polarisee WO1997035177A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1019980707424A KR20000064701A (ko) 1996-03-19 1997-03-19 편광에의한특성파라미터결정방법
AU20186/97A AU2018697A (en) 1996-03-19 1997-03-19 Determining characteristic parameters by polarised light
IL12628997A IL126289A0 (en) 1996-03-19 1997-03-19 Determining characteristic parameters by polarised light
JP53298597A JP2001519891A (ja) 1996-03-19 1997-03-19 偏光による特性パラメーターの測定

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
AUPN8752 1996-03-19
AUPN8752A AUPN875296A0 (en) 1996-03-19 1996-03-19 Method and apparatus for monitoring materials processing

Publications (1)

Publication Number Publication Date
WO1997035177A1 true WO1997035177A1 (fr) 1997-09-25

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/AU1997/000181 WO1997035177A1 (fr) 1996-03-19 1997-03-19 Determination de parametres caracteristiques par lumiere polarisee

Country Status (6)

Country Link
JP (1) JP2001519891A (fr)
KR (1) KR20000064701A (fr)
CN (1) CN1219236A (fr)
AU (1) AUPN875296A0 (fr)
IL (1) IL126289A0 (fr)
WO (1) WO1997035177A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999008068A1 (fr) * 1997-08-11 1999-02-18 Robert Bosch Gmbh Dispositif de mesure a ellipsometre
WO2001090687A3 (fr) * 2000-05-19 2002-04-04 Therma Wave Inc Surveillance de la temperature et des caracteristiques d'un echantillon par un ellipsometre de compensation rotatif
KR100808274B1 (ko) * 2000-05-26 2008-02-29 쏘시에떼 드 프로딕시옹 에 드 리쉐르슈 아쁠리께 챔버 등에 수용된 샘플에 대한 타원해석 계측 방법 및 장치

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KR100688980B1 (ko) * 2005-07-01 2007-03-08 삼성전자주식회사 플라즈마 모니터링장치와 플라즈마 모니터링 방법
CN102507040B (zh) * 2011-11-10 2013-08-21 复旦大学 一种基于椭偏仪的薄膜温度测量方法
CN102519364B (zh) * 2011-11-30 2014-10-15 上海华力微电子有限公司 用于等离子体刻蚀结构的光学探测方法及计算机辅助系统
FR2994264B1 (fr) * 2012-08-02 2014-09-12 Centre Nat Rech Scient Procede d'analyse de la structure cristalline d'un materiau semi-conducteur poly-cristallin
EP2703773B1 (fr) * 2012-08-28 2014-12-24 Texmag GmbH Vertriebsgesellschaft Capteur destiné à détecter une bande de marchandise déroulante
CN103076287B (zh) * 2013-01-25 2015-05-13 中国人民解放军陆军军官学院 一种采用偏振光检测托卡马克聚变堆第一壁损伤的方法
CN103486974B (zh) * 2013-09-23 2016-04-13 中国科学院微电子研究所 一种光谱椭偏测量装置及方法
CN103759661B (zh) * 2013-11-04 2016-06-29 北京理工大学 一种用于介质内测量薄膜厚度和折射率的装置
WO2015134036A1 (fr) * 2014-03-07 2015-09-11 Halliburton Energy Services Inc. Modulation de l'intensité d'une lumière en relation avec la longueur d'onde dans des dispositifs informatiques optiques multivariés utilisant des polariseurs
CN105136679B (zh) * 2015-09-02 2017-12-26 北京航玻新材料技术有限公司 一种基于椭偏仪的光学材料表面质量评估方法及其应用
CN105445191B (zh) * 2015-11-30 2018-08-24 中国科学院长春应用化学研究所 多通道原位测量气氛池
CN113281268B (zh) * 2021-05-31 2022-08-16 华中科技大学 一种旋转偏振器件光谱椭偏仪的数据分析方法及系统
CN115979148A (zh) * 2023-01-10 2023-04-18 深圳市埃芯半导体科技有限公司 一种薄膜参数的获取方法、获取装置及终端设备

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3985447A (en) * 1975-08-29 1976-10-12 Bell Telephone Laboratories, Incorporated Measurement of thin films by polarized light
FR2491234A1 (fr) * 1980-09-29 1982-04-02 Labo Electronique Physique Dispositif electronique, pour l'analyse et le calcul des coefficients de fourier d'une fonction periodique, et ellipsometre comportant un tel dispositif
US4762414A (en) * 1985-04-23 1988-08-09 Cselt-Centro Studi E Laboratori Telecomunicazioni S.P.A. Static interferometric ellipsometer
US4850711A (en) * 1986-06-13 1989-07-25 Nippon Kokan Kabushiki Kaisha Film thickness-measuring apparatus using linearly polarized light
US5526117A (en) * 1993-01-14 1996-06-11 Sentech Instruments Gmbh Method for the determination of characteristic values of transparent layers with the aid of ellipsometry

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3985447A (en) * 1975-08-29 1976-10-12 Bell Telephone Laboratories, Incorporated Measurement of thin films by polarized light
FR2491234A1 (fr) * 1980-09-29 1982-04-02 Labo Electronique Physique Dispositif electronique, pour l'analyse et le calcul des coefficients de fourier d'une fonction periodique, et ellipsometre comportant un tel dispositif
US4762414A (en) * 1985-04-23 1988-08-09 Cselt-Centro Studi E Laboratori Telecomunicazioni S.P.A. Static interferometric ellipsometer
US4850711A (en) * 1986-06-13 1989-07-25 Nippon Kokan Kabushiki Kaisha Film thickness-measuring apparatus using linearly polarized light
US5526117A (en) * 1993-01-14 1996-06-11 Sentech Instruments Gmbh Method for the determination of characteristic values of transparent layers with the aid of ellipsometry

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999008068A1 (fr) * 1997-08-11 1999-02-18 Robert Bosch Gmbh Dispositif de mesure a ellipsometre
US7088448B1 (en) 1997-08-11 2006-08-08 Robert Bosch Gmbh Ellipsometer measurement apparatus
WO2001090687A3 (fr) * 2000-05-19 2002-04-04 Therma Wave Inc Surveillance de la temperature et des caracteristiques d'un echantillon par un ellipsometre de compensation rotatif
US6583875B1 (en) 2000-05-19 2003-06-24 Therma-Wave, Inc. Monitoring temperature and sample characteristics using a rotating compensator ellipsometer
US6894781B2 (en) 2000-05-19 2005-05-17 Therma-Wave, Inc. Monitoring temperature and sample characteristics using a rotating compensator ellipsometer
KR100808274B1 (ko) * 2000-05-26 2008-02-29 쏘시에떼 드 프로딕시옹 에 드 리쉐르슈 아쁠리께 챔버 등에 수용된 샘플에 대한 타원해석 계측 방법 및 장치

Also Published As

Publication number Publication date
CN1219236A (zh) 1999-06-09
JP2001519891A (ja) 2001-10-23
AUPN875296A0 (en) 1996-04-18
IL126289A0 (en) 1999-05-09
KR20000064701A (ko) 2000-11-06

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