WO1998001601B1 - Plasma chamber with separate process gas and cleaning gas injection ports - Google Patents
Plasma chamber with separate process gas and cleaning gas injection portsInfo
- Publication number
- WO1998001601B1 WO1998001601B1 PCT/US1997/011686 US9711686W WO9801601B1 WO 1998001601 B1 WO1998001601 B1 WO 1998001601B1 US 9711686 W US9711686 W US 9711686W WO 9801601 B1 WO9801601 B1 WO 9801601B1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- gas
- chamber
- cleaning
- ports
- injection port
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract 32
- 238000004140 cleaning Methods 0.000 title claims abstract 24
- 238000002347 injection Methods 0.000 title claims abstract 22
- 239000007924 injection Substances 0.000 title claims abstract 22
- 235000012431 wafers Nutrition 0.000 claims 5
- 239000012459 cleaning agent Substances 0.000 claims 3
- 238000000151 deposition Methods 0.000 claims 3
- 230000008021 deposition Effects 0.000 claims 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 2
- 238000010849 ion bombardment Methods 0.000 claims 2
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 238000005137 deposition process Methods 0.000 abstract 1
- 238000011065 in-situ storage Methods 0.000 abstract 1
- 238000000926 separation method Methods 0.000 abstract 1
Abstract
A method and arrangement for the in situ cleaning of a chamber in which process gas in injected into the chamber through gas injecton ports. Separate gas injection ports through which process gas and the cleaning gas are injected into the chamber are provided. The process gas is injected into the chamber, such as a plasma chamber (30), through a first gas injection port (62) while the cleaning gas, which cleans the residue left by the process gas during the deposition process, is injected into the chamber through the second gas injection port (60) that is separate from the first gas injection port through which the process gas is injected. The separation of the gas injection ports provides an equalized pressure within the jet screw ports for the process gas and the interior of the chamber. This allows the jet screw ports to be maximally cleaned and reduces the frequency of replacement of the jet screw ports in the chamber.
Claims
1. An arrangement for insitu cleaning a chamber in which process gas is injected into the chamber through gas injection ports, the arrangement comprising: a chamber in which a process is performed; at least a first gas injection port in the chamber through which process gas is injectable into the chamber; and at least a second gas injection port in the chamber through which insitu cleaning gas is injectable into the chamber, wherein cleaning gas injected into the chamber also contacts the first gas injection port to clean the first gas injection port, the first and second gas injection ports being separate ports.
2. The arrangement of Claim 1, wherein the chamber is a plasma chamber.
3. The arrangement of Claim 1 or 2 , wherein the first gas injection port is a jet screw.
4. The arrangement of any of Claims 1-3, wherein the process gas includes SiH„ gas.
5. The arrangement of any of Claims 1-4, wherein the cleaning gas includes NF3 gas.
6. The arrangement of any of Claims 1-5, wherein the second gas injection port is also a port for injecting gas to form plasma into the chamber.
7. A method of routing gas to a plasma chamber comprising the steps of: injecting process gas into the plasma chamber through a first gas injection port; and injecting cleaning gas into the plasma chamber through a second gas injection port separate from the first gas injection port, the cleaning gas cleaning the plasma chamber and the first gas injection port.
8. The method of Claim 7, wherein the process gas includes SiH4 gas, and the cleaning gas includes NF3 gas.
9. The method of Claim 7 or 8, further comprising injecting gas to form plasma in the plasma chamber prior to injecting the process gas into the plasma chamber, the gas to form the plasma being injected through the second gas injection port.
10. The method of any of Claims 7-9, further comprising processing a wafer prior to the step of injecting process gas, and processing another wafer after the plasma chamber and the first gas injection port have been cleaned.
11. A method of unclogging ports in a chamber, the ports injecting process gas into the chamber, the method comprising the steps of : terminating injection of the process gas into the chamber; then injecting cleaning gas into the chamber through openings separate from the ports to equalize pressure of the cleaning gas within the ports with pressure of the cleaning gas within the chamber.
12. The method of Claim 11 or 20, further comprising supplying energy into the chamber in the presence of the cleaning gas to generate ion bombardment, with the cleaning gas providing a cleaning agent that etches depositions in the chamber and the jet screw ports when the ion bombardment is generated.
13. The method of any of Claims 11, 12 or 20, wherein the chamber has a chuck onto which wafers are placed, the method further comprising placing a cover wafer on the chuck prior to injecting the cleaning gas.
15 16
14. The method of any of Claims 11-13 or 20, further comprising performing a deposition after the cleaning agent etches the depositions to getter the cleaning agent, followed by removing the cover wafer from the chamber.
15. A chemical vapor deposition system comprising: a plasma chamber; and a gas supply that supplies process gas, and cleaning gas to the plasma chamber, wherein the plasma chamber has a first port through which the process gas is supplied, and a second port, separate from the first port, through which the cleaning gas is supplied.
16. The system of Claim 15, wherein the gas supply is coupled to the plasma chamber such that the plasma forming gas is also supplied to the plasma chamber through the second port .
17. The system of Claim 15 or 16, wherein the process gas includes SiH4 and the cleaning gas includes NF3.
18. The system of any of Claims 15-17, wherein the first port is a jet screw, and the gas supply supplies the cleaning gas to the plasma chamber such that the pressure of the cleaning gas within the jet screw is approximately equal to the pressure of the cleaning gas in the plasma chamber.
19. The system of any of Claims 15-18, wherein the plasma chamber is an electron cyclotron resonance chamber.
16
20. The method of Claim 11 wherein the ports are jet screw ports .
21. The arrangement of any of Claims 7-10 wherein the first gas injection port is a jet screw.
17
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP97934054A EP0856070B1 (en) | 1996-07-09 | 1997-07-09 | Process for cleaning a vacuum processing chamber including the gas injection port |
| JP50528398A JP4000487B2 (en) | 1996-07-09 | 1997-07-09 | Plasma chamber with separate injection ports for process gas and cleaning gas |
| DE69735271T DE69735271T2 (en) | 1996-07-09 | 1997-07-09 | Method for cleaning a vacuum processing chamber including the gas inlet opening |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/679,356 | 1996-07-09 | ||
| US08/679,356 US5988187A (en) | 1996-07-09 | 1996-07-09 | Chemical vapor deposition system with a plasma chamber having separate process gas and cleaning gas injection ports |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| WO1998001601A1 WO1998001601A1 (en) | 1998-01-15 |
| WO1998001601B1 true WO1998001601B1 (en) | 1998-02-26 |
Family
ID=24726594
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/US1997/011686 WO1998001601A1 (en) | 1996-07-09 | 1997-07-09 | Plasma chamber with separate process gas and cleaning gas injection ports |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US5988187A (en) |
| EP (1) | EP0856070B1 (en) |
| JP (1) | JP4000487B2 (en) |
| DE (1) | DE69735271T2 (en) |
| WO (1) | WO1998001601A1 (en) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6596123B1 (en) * | 2000-01-28 | 2003-07-22 | Applied Materials, Inc. | Method and apparatus for cleaning a semiconductor wafer processing system |
| KR100444149B1 (en) * | 2000-07-22 | 2004-08-09 | 주식회사 아이피에스 | ALD thin film depositin equipment cleaning method |
| US6408860B1 (en) * | 2000-09-21 | 2002-06-25 | Trw Inc. | Method for cleaning phosphorus from an MBE chamber |
| KR100375102B1 (en) * | 2000-10-18 | 2003-03-08 | 삼성전자주식회사 | Method for CVD and apparatus for performing the same in semiconductor device processing |
| US6534921B1 (en) * | 2000-11-09 | 2003-03-18 | Samsung Electronics Co., Ltd. | Method for removing residual metal-containing polymer material and ion implanted photoresist in atmospheric downstream plasma jet system |
| US7270724B2 (en) | 2000-12-13 | 2007-09-18 | Uvtech Systems, Inc. | Scanning plasma reactor |
| US6773683B2 (en) | 2001-01-08 | 2004-08-10 | Uvtech Systems, Inc. | Photocatalytic reactor system for treating flue effluents |
| KR100453014B1 (en) * | 2001-12-26 | 2004-10-14 | 주성엔지니어링(주) | Apparatus for Chemical Vapor Deposition |
| US7176140B1 (en) * | 2004-07-09 | 2007-02-13 | Novellus Systems, Inc. | Adhesion promotion for etch by-products |
| US7819981B2 (en) * | 2004-10-26 | 2010-10-26 | Advanced Technology Materials, Inc. | Methods for cleaning ion implanter components |
| US20070108161A1 (en) * | 2005-11-17 | 2007-05-17 | Applied Materials, Inc. | Chamber components with polymer coatings and methods of manufacture |
| CN102747336A (en) | 2006-04-26 | 2012-10-24 | 高级技术材料公司 | Cleaning method and apparatus of semiconductor processing systems |
| US7942969B2 (en) | 2007-05-30 | 2011-05-17 | Applied Materials, Inc. | Substrate cleaning chamber and components |
| TWI494975B (en) | 2008-02-11 | 2015-08-01 | Advanced Tech Materials | Ion source cleaning in semiconductor processing systems |
| SG186364A1 (en) * | 2010-08-25 | 2013-01-30 | Linde Ag | Reactor box chamber cleaning using molecular fluorine |
| JP6154677B2 (en) | 2013-06-28 | 2017-06-28 | 東京エレクトロン株式会社 | Cleaning method and processing apparatus |
| WO2015084825A1 (en) | 2013-12-02 | 2015-06-11 | Applied Materials, Inc. | Methods and apparatus for in-situ cleaning of a process chamber |
| US10730082B2 (en) * | 2016-10-26 | 2020-08-04 | Varian Semiconductor Equipment Associates, Inc. | Apparatus and method for differential in situ cleaning |
| WO2018204500A1 (en) * | 2017-05-02 | 2018-11-08 | Tokyo Electron Limited | Manufacturing methods to reduce surface particle impurities after a plasma process |
| TWI755979B (en) * | 2019-12-20 | 2022-02-21 | 台灣積體電路製造股份有限公司 | Thin film deposition system and method of thin film deposition |
| KR20230025201A (en) * | 2021-08-13 | 2023-02-21 | 정경환 | Apparatus for real-time measuring thickness of thin film |
| KR20230025202A (en) * | 2021-08-13 | 2023-02-21 | 정경환 | Method for real-time measuring thickness of thin film |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4786352A (en) * | 1986-09-12 | 1988-11-22 | Benzing Technologies, Inc. | Apparatus for in-situ chamber cleaning |
| JPH0250485A (en) * | 1988-08-12 | 1990-02-20 | Fujitsu Ltd | photoconductor |
| US5207836A (en) * | 1989-08-25 | 1993-05-04 | Applied Materials, Inc. | Cleaning process for removal of deposits from the susceptor of a chemical vapor deposition apparatus |
| JP2598336B2 (en) * | 1990-09-21 | 1997-04-09 | 株式会社日立製作所 | Plasma processing equipment |
| US5443686A (en) * | 1992-01-15 | 1995-08-22 | International Business Machines Corporation Inc. | Plasma CVD apparatus and processes |
| JP3227522B2 (en) * | 1992-10-20 | 2001-11-12 | 株式会社日立製作所 | Microwave plasma processing method and apparatus |
-
1996
- 1996-07-09 US US08/679,356 patent/US5988187A/en not_active Ceased
-
1997
- 1997-07-09 DE DE69735271T patent/DE69735271T2/en not_active Expired - Lifetime
- 1997-07-09 EP EP97934054A patent/EP0856070B1/en not_active Expired - Lifetime
- 1997-07-09 WO PCT/US1997/011686 patent/WO1998001601A1/en active IP Right Grant
- 1997-07-09 JP JP50528398A patent/JP4000487B2/en not_active Expired - Fee Related
-
2001
- 2001-11-21 US US09/989,106 patent/USRE38097E1/en not_active Expired - Lifetime
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