WO1998001601B1 - Chambre a plasma avec orifices separes d'injection de gaz de traitement et de gaz de nettoyage - Google Patents
Chambre a plasma avec orifices separes d'injection de gaz de traitement et de gaz de nettoyageInfo
- Publication number
- WO1998001601B1 WO1998001601B1 PCT/US1997/011686 US9711686W WO9801601B1 WO 1998001601 B1 WO1998001601 B1 WO 1998001601B1 US 9711686 W US9711686 W US 9711686W WO 9801601 B1 WO9801601 B1 WO 9801601B1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- gas
- chamber
- cleaning
- ports
- injection port
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract 32
- 238000004140 cleaning Methods 0.000 title claims abstract 24
- 238000002347 injection Methods 0.000 title claims abstract 22
- 239000007924 injection Substances 0.000 title claims abstract 22
- 235000012431 wafers Nutrition 0.000 claims 5
- 239000012459 cleaning agent Substances 0.000 claims 3
- 238000000151 deposition Methods 0.000 claims 3
- 230000008021 deposition Effects 0.000 claims 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 2
- 238000010849 ion bombardment Methods 0.000 claims 2
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 238000005137 deposition process Methods 0.000 abstract 1
- 238000011065 in-situ storage Methods 0.000 abstract 1
- 238000000926 separation method Methods 0.000 abstract 1
Abstract
L'invention concerne un procédé et un mécanisme de nettoyage in situ d'une enceinte, procédé dans lequel un gaz de traitement est injecté dans l'enceinte par des orifices d'injection de gaz. L'invention concerne des orifices séparés d'injection de gaz par lesquels un gaz de traitement et le gaz de nettoyage sont injectés dans l'enceinte. Le gaz de traitement est injecté dans l'enceinte, tel qu'une enceinte à plasma (30), à travers un premier orifice (62) d'injection de gaz alors que le gaz de nettoyage, qui nettoie le résidu laissé par le gaz de traitement pendant le procédé de déposition, est injecté dans l'enceinte par le deuxième orifice (60) d'injection de gaz, séparé du premier orifice d'injection de gaz par lequel le gaz de traitement est injecté. La séparation des orifices d'injection de gaz permet d'obtenir une pression équilibrée à l'intérieur des orifices des vis à jet destinées au gaz de traitement et à l'intérieur de l'enceinte, ce qui permet un nettoyage maximal des orifices des vis à jet et réduit la fréquence de remplacement des orifices des vis à jet dans l'enceinte.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP97934054A EP0856070B1 (fr) | 1996-07-09 | 1997-07-09 | Procédé de nettoyage d'une chambre de traitement sous vide y inclu l'orifice d'injection de gaz |
| JP50528398A JP4000487B2 (ja) | 1996-07-09 | 1997-07-09 | プロセス気体および洗浄気体の別々の注入ポートを有するプラズマ・チャンバ |
| DE69735271T DE69735271T2 (de) | 1996-07-09 | 1997-07-09 | Verfahren zum Reinigen eines Vakuumbearbeitungskammer einschliesslich der Gaseinlassöffnung |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/679,356 | 1996-07-09 | ||
| US08/679,356 US5988187A (en) | 1996-07-09 | 1996-07-09 | Chemical vapor deposition system with a plasma chamber having separate process gas and cleaning gas injection ports |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| WO1998001601A1 WO1998001601A1 (fr) | 1998-01-15 |
| WO1998001601B1 true WO1998001601B1 (fr) | 1998-02-26 |
Family
ID=24726594
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/US1997/011686 WO1998001601A1 (fr) | 1996-07-09 | 1997-07-09 | Chambre a plasma avec orifices separes d'injection de gaz de traitement et de gaz de nettoyage |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US5988187A (fr) |
| EP (1) | EP0856070B1 (fr) |
| JP (1) | JP4000487B2 (fr) |
| DE (1) | DE69735271T2 (fr) |
| WO (1) | WO1998001601A1 (fr) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6596123B1 (en) * | 2000-01-28 | 2003-07-22 | Applied Materials, Inc. | Method and apparatus for cleaning a semiconductor wafer processing system |
| KR100444149B1 (ko) * | 2000-07-22 | 2004-08-09 | 주식회사 아이피에스 | Ald 박막증착설비용 클리닝방법 |
| US6408860B1 (en) * | 2000-09-21 | 2002-06-25 | Trw Inc. | Method for cleaning phosphorus from an MBE chamber |
| KR100375102B1 (ko) * | 2000-10-18 | 2003-03-08 | 삼성전자주식회사 | 반도체 장치의 제조에서 화학 기상 증착 방법 및 이를수행하기 위한 장치 |
| US6534921B1 (en) * | 2000-11-09 | 2003-03-18 | Samsung Electronics Co., Ltd. | Method for removing residual metal-containing polymer material and ion implanted photoresist in atmospheric downstream plasma jet system |
| US7270724B2 (en) | 2000-12-13 | 2007-09-18 | Uvtech Systems, Inc. | Scanning plasma reactor |
| US6773683B2 (en) | 2001-01-08 | 2004-08-10 | Uvtech Systems, Inc. | Photocatalytic reactor system for treating flue effluents |
| KR100453014B1 (ko) * | 2001-12-26 | 2004-10-14 | 주성엔지니어링(주) | Ｃｖｄ 장치 |
| US7176140B1 (en) * | 2004-07-09 | 2007-02-13 | Novellus Systems, Inc. | Adhesion promotion for etch by-products |
| US7819981B2 (en) * | 2004-10-26 | 2010-10-26 | Advanced Technology Materials, Inc. | Methods for cleaning ion implanter components |
| US20070108161A1 (en) * | 2005-11-17 | 2007-05-17 | Applied Materials, Inc. | Chamber components with polymer coatings and methods of manufacture |
| CN102747336A (zh) | 2006-04-26 | 2012-10-24 | 高级技术材料公司 | 半导体加工系统的清洁方法和装置 |
| US7942969B2 (en) | 2007-05-30 | 2011-05-17 | Applied Materials, Inc. | Substrate cleaning chamber and components |
| TWI494975B (zh) | 2008-02-11 | 2015-08-01 | Advanced Tech Materials | 在半導體處理系統中離子源之清洗 |
| SG186364A1 (en) * | 2010-08-25 | 2013-01-30 | Linde Ag | Reactor box chamber cleaning using molecular fluorine |
| JP6154677B2 (ja) | 2013-06-28 | 2017-06-28 | 東京エレクトロン株式会社 | クリーニング方法及び処理装置 |
| WO2015084825A1 (fr) | 2013-12-02 | 2015-06-11 | Applied Materials, Inc. | Procédés et appareil pour nettoyer une chambre de traitement in situ |
| US10730082B2 (en) * | 2016-10-26 | 2020-08-04 | Varian Semiconductor Equipment Associates, Inc. | Apparatus and method for differential in situ cleaning |
| WO2018204500A1 (fr) * | 2017-05-02 | 2018-11-08 | Tokyo Electron Limited | Procédés de fabrication pour réduire des impuretés de particules de surface après un traitement au plasma |
| TWI755979B (zh) * | 2019-12-20 | 2022-02-21 | 台灣積體電路製造股份有限公司 | 薄膜沉積系統以及沉積薄膜方法 |
| KR20230025201A (ko) * | 2021-08-13 | 2023-02-21 | 정경환 | 박막 두께 실시간 측정 장치 |
| KR20230025202A (ko) * | 2021-08-13 | 2023-02-21 | 정경환 | 박막 두께 실시간 측정 방법 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4786352A (en) * | 1986-09-12 | 1988-11-22 | Benzing Technologies, Inc. | Apparatus for in-situ chamber cleaning |
| JPH0250485A (ja) * | 1988-08-12 | 1990-02-20 | Fujitsu Ltd | 光導電体 |
| US5207836A (en) * | 1989-08-25 | 1993-05-04 | Applied Materials, Inc. | Cleaning process for removal of deposits from the susceptor of a chemical vapor deposition apparatus |
| JP2598336B2 (ja) * | 1990-09-21 | 1997-04-09 | 株式会社日立製作所 | プラズマ処理装置 |
| US5443686A (en) * | 1992-01-15 | 1995-08-22 | International Business Machines Corporation Inc. | Plasma CVD apparatus and processes |
| JP3227522B2 (ja) * | 1992-10-20 | 2001-11-12 | 株式会社日立製作所 | マイクロ波プラズマ処理方法及び装置 |
-
1996
- 1996-07-09 US US08/679,356 patent/US5988187A/en not_active Ceased
-
1997
- 1997-07-09 DE DE69735271T patent/DE69735271T2/de not_active Expired - Lifetime
- 1997-07-09 EP EP97934054A patent/EP0856070B1/fr not_active Expired - Lifetime
- 1997-07-09 WO PCT/US1997/011686 patent/WO1998001601A1/fr active IP Right Grant
- 1997-07-09 JP JP50528398A patent/JP4000487B2/ja not_active Expired - Fee Related
-
2001
- 2001-11-21 US US09/989,106 patent/USRE38097E1/en not_active Expired - Lifetime
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