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WO1998015668A1 - Procede de production d'un corps stratifie et corps stratifie - Google Patents

Procede de production d'un corps stratifie et corps stratifie Download PDF

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Publication number
WO1998015668A1
WO1998015668A1 PCT/JP1996/002907 JP9602907W WO9815668A1 WO 1998015668 A1 WO1998015668 A1 WO 1998015668A1 JP 9602907 W JP9602907 W JP 9602907W WO 9815668 A1 WO9815668 A1 WO 9815668A1
Authority
WO
WIPO (PCT)
Prior art keywords
laminate
substrate
substances
molecules
film
Prior art date
Application number
PCT/JP1996/002907
Other languages
English (en)
Japanese (ja)
Inventor
Kishio Hidaka
Hideyuki Arikawa
Tetuya Ohashi
Yoshitaka Kojima
Shigeyoshi Nakamura
Original Assignee
Hitachi, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi, Ltd. filed Critical Hitachi, Ltd.
Priority to PCT/JP1996/002907 priority Critical patent/WO1998015668A1/fr
Publication of WO1998015668A1 publication Critical patent/WO1998015668A1/fr

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0026—Activation or excitation of reactive gases outside the coating chamber
    • C23C14/0031—Bombardment of substrates by reactive ion beams
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3967—Composite structural arrangements of transducers, e.g. inductive write and magnetoresistive read
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices

Definitions

  • the present invention relates to a functional member having a structure in which two types of thin films having different characteristics are alternately laminated, and in particular, to a superlattice giant magnetoresistive film (GMR) in which a magnetic material and a nonmagnetic material are alternately laminated.
  • GMR superlattice giant magnetoresistive film
  • the present invention relates to a method for manufacturing a laminate that can be applied to the production of materials for films, magnetic materials for CDs, and materials for MOS bonding.
  • Japanese Patent Application Laid-Open No. 5-303724 discloses a method of manufacturing a magnetoresistive film by laminating a magnetic film and a non-magnetic film using a sputtering method and manufacturing a magnetic head of a magnetic disk drive.
  • the conventional method of manufacturing a laminated film requires a process of changing the type of a substance to be deposited, sputtered, or the like when forming each layer, and has a problem that the manufacturing is time-consuming and costly.
  • the atoms or molecules on the substrate are irradiated with an ion beam.
  • a method for manufacturing a laminate is provided, wherein the plurality of types of atoms or molecules are laminated on the substrate for each type of atomic or molecular substance.
  • Methods for depositing different types of atoms or molecules on a substrate include, for example, heating a metal or ceramic in a crucible by irradiating it with an electron beam to vaporize or regenerate by sputtering.
  • a method of depositing the deposited atoms or molecules on the substrate or a so-called CVD method using a reactive gas and depositing the reactive gas in contact with the substrate can be used.
  • the inventors deposit atoms or molecules on a substrate and irradiate with an ion beam to separate a plurality of types of substances, and obtain a structure in which each atom or molecule is laminated for each type of substance. I found that I can do it. This principle is based on forces that are not clearly understood at present. With the usual method of depositing atoms or molecules, the atoms or molecules cannot move after the atoms or molecules come into contact with the substrate. Therefore, atoms or molecules that are partially agglomerated while the atoms or molecules are floating in the reaction vessel are deposited as they are, so they are deposited in a two-dimensional island shape and solidified as they are.
  • each substance is a single layer Is more energy stable, and a uniform temperature region is formed in a direction parallel to the substrate surface. Therefore, a plurality of substances are formed as layers parallel to the substrate surface having a single composition. If more than 10 atomic layers of atoms or molecules are deposited on the substrate, the lowermost atomic layer is solidified and cannot be rearranged even if energy is subsequently applied by an ion beam.
  • the ion beam may be provided with energy for moving and rearranging the substance on the substrate, and the type of ions may be oxygen, nitrogen, or an inert gas (argon, xenon, etc.).
  • the material forming the laminate can be a reactive gas used for vaporization, sputtering, or CVD by electron beam heating, as used in conventional thin film forming techniques.
  • the manufactured film has little crystal disorder, it also has characteristic characteristics such as a small decrease in magnetic characteristics.
  • the number of atoms or molecules to be deposited per unit time is 1 to 100 with respect to the number of ions per unit time 1 of the ion beam irradiating the atoms or molecules on the substrate. . As described above, this is a desirable condition for rearrangement before the atoms to be deposited become more than 10 atomic layers and solidify.
  • Methods for depositing atoms or molecules include vapor deposition or sputtering. It is preferable that it is used. A certain degree of vacuum is required as conditions for ion beam irradiation. Since vapor deposition and sputtering can be performed most efficiently with the same degree of vacuum, this is a suitable combination for implementing the present invention in the same reaction vessel.
  • the ion beam is preferably a beam composed of at least one kind of ion selected from oxygen, nitrogen and argon. It is a gas species that is inexpensive and is suitable for applying energy to atoms or molecules on a substrate.
  • a laminated structure of metal and ceramics can be manufactured by using at least one kind of substance as a metal and the other kind as a ceramic.
  • At least one kind of the substance is made of a magnetic material, and the other kind is made of a non-magnetic material, so that a laminated structure of a single-domain magnetic layer and a non-magnetic layer can be obtained.
  • At least one of the plurality of substances may be a magnetic material, another one may be an insulating material, and the other one may be a conductive metal material.
  • the configuration, thickness, and the like of each layer can be easily changed as appropriate according to the application.
  • each substance is preferably a substance that does not dissolve in a liquid phase or a solid phase.
  • a substance once attached to a substrate is irradiated with an ion beam to relocate the substance. If each material is easily dissolved in each other during the rearrangement, there is a possibility that an intermediate layer diffuses between the layers. Therefore, the material forming the respective layers by be produced by a method of low solubility substance is is preferably c present invention each other, laminate structure as One if such obtained were manufactured in a conventional manner and can be produced become.
  • three or more layers of two types of substances are alternately stacked on a substrate, and the substance grows in a columnar direction in a direction perpendicular to the substrate, and a gap between the substances growing in a columnar form evaporates. It is possible to produce a laminate that is filled with a modified material.
  • the thickness of each layer can be set to 1 ⁇ m or less.
  • each material of the above-mentioned laminate satisfy the following formula, where f i represents the atomic volume ratio of a single substance.
  • the substance may be a small one of them may be a crystalline material t Further, in the above crystalline material, it is preferable that the closest atomic plane is a lamination plane.
  • twins may be formed without disturbing the stacking of the closest atomic plane.
  • FIG. 1 is a diagram showing an example of an apparatus for carrying out the present invention.
  • FIG. 2 is a diagram showing a method for controlling a deposition amount according to the first embodiment of the present invention.
  • FIG. 3 is a diagram showing the composition distribution of the laminated film manufactured in Example 1 of the present invention.
  • FIG. 4 is a view showing a typical example of the structure of the laminated film of the present invention.
  • FIG. 5 shows a transmission electron micrograph of the laminated film of the present invention observed from above.
  • FIG. 6 shows a lattice image of the laminated film according to Example 1 of the present invention, taken by a transmission electron microscope.
  • FIG. 7 is a diagram showing a magnetic head assembly of a magnetic disk recording device to which the laminated film of the present invention is applied.
  • FIG. 8 is a cross-sectional view of a thin-film magnetic head to which the laminated film of the present invention is applied.
  • a laminate of the present invention was formed on the surface of the substrate using polycrystalline pure copper by a film forming apparatus shown in FIG.
  • This film deposition system is installed in a vacuum vessel 101.
  • the installed ion source 102, electron gun 103, evaporation crucible 104 capable of storing a plurality of evaporation materials, sample holder 105, and vacuum vessel 101 have a vacuum degree of 10- ⁇ Torr or less. It is composed of a vacuum pump 106 which can be evacuated.
  • the shape of the test piece is a 20 ⁇ 40 ⁇ 3 band-shaped plate. First, the surface of the test piece was mirror-polished, degreased and washed, and then attached to the sample holder 105 in the vacuum vessel 101.
  • the ion source 1 0 2 with an acceleration voltage 1 0 k V, Shi pull out electrode current density 1.5
  • the substrate surface was cleaned by irradiating with oxygen ion for 10 minutes under the condition of mA / cm 2 .
  • the ion source 1 0 2 or et oxygen ion irradiation in the conditions by irradiating an electron beam from an electron gun 1 0 3 to C u and A 1 2 0 3 placed in the deposition crucible 1 04 heated, it was co-deposited C u and a 1 2 0 3 by electron beam evaporation method.
  • C u and A 1 2 0 3 is their respective evaporated from separate crucibles, were also controlled independently deposited amount. Time control of the deposition amount starts deposited as shown in FIG. 2 only as C u, increasing the deposition amount of A 1 2 ⁇ 3 while gradually decreasing the deposition amount of C u, eventually
  • deposition rate of the deposition starting C u is 1 0 ⁇ ⁇ /]
  • deposition rate of A 1 2 0 3 at the end of vapor deposition is set to 1 0 ⁇ ⁇ Zh, film formation was carried out for 6 0 min.
  • the mixed film was formed only by vapor deposition without irradiation with oxygen ions.
  • Elemental analysis of the cross section of the sample prepared in this manner was performed by EPMA, and as a result, a film formed while performing oxygen ion irradiation according to the present invention and a film formed without performing oxygen ion irradiation as a comparative material were formed.
  • the C u 1 0 0-0% by either toward the surface from the substrate as shown in FIG. 3 of the sample a 1 2 ⁇ 3 0
  • the composition distribution was such that the composition continuously changed to about 100%.
  • the cross-sectional microstructures of these samples were observed with a TEM (transmission electron microscope).
  • Cu In the sample formed while performing oxygen ion irradiation according to the present invention, Cu:
  • a 1 2 ⁇ 3 composition ratio is 1 0: 0 to 5: alternately laminated in five areas C u and A 1 2 ⁇ 3 Guys Re also a thickness of several tens of nm from several nm single crystal phase It was an organization.
  • FIG. 4 is a schematic view of a typical example of such a laminated structure
  • FIG. 5 is a transmission electron micrograph observed from above the laminated body.
  • Figure 6 is C u:
  • a 1 2 0 3 is alternating C u and 3 to 5 mu m thick lattice image of the two near the It is a laminated structure.
  • the comparative material had a structure in which the particles were dispersed in a matrix form over the entire composition region, and such a laminated structure was not observed.
  • a single crystal Si wafer was used as a substrate, and a laminate of the present invention was formed on the surface thereof by a film forming apparatus shown in FIG.
  • This film-forming apparatus is an ion source 102, an electron gun 103, a deposition crucible 104 capable of storing a plurality of deposition materials, a sample holder 105, and a vacuum installed in a vacuum vessel 101.
  • the container 101 includes a vacuum pump 106 capable of evacuating the container 101 to a degree of vacuum of 10 Torr or less.
  • the specimen shape is a disk with a diameter of 25.4 x 1 mm. First, the surface of the test piece was degreased and washed, and then attached to the sample holder 105 in the vacuum vessel 101.
  • the ion source 1 0 2 0 accelerating voltage 1 with k V pull out Shi electrode current density 1.
  • the 5 m a ZCM oxygen ions in the second condition was cleaning of the irradiated surface of the substrate for 10 minutes.
  • Elemental analysis of the cross section of the sample prepared in this manner was performed by EPMA.
  • the sample formed while performing oxygen ion irradiation according to the present invention and the sample formed as a comparative material without performing oxygen ion irradiation were used. 6 0% none was C 0 of the sample, a 1 2 0 3 is was observed segregation at 4 0% composition. Furthermore, the cross-sectional microstructures of these samples were observed with a TEM (transmission electron microscope). In the sample formed while performing oxygen ion irradiation according to the present invention, C o and
  • a has been a tissue of alternately laminated with 1 2 0 3 is a thickness of several tens of nm from several nm in both a single crystal phase.
  • the comparative material had a structure in which particles were dispersed in a matrix in an island manner over the entire composition range, and such a laminated structure was not observed.
  • the superlattice giant magnetoresistive film is formed by laminating several layers of ferromagnetic material such as cobalt and nonmagnetic material such as copper to increase the resistance change when a magnetic field is detected.
  • Fig. 8 shows a cross-sectional view of the thin-film magnetic head.
  • a l 2 ⁇ 3 is a wear-resistant ceramics - to form a substrate protective layer on the T i C ceramics substrate, a lower shield film thereon, forming a lower gap layer.
  • a giant magnetoresistive film in which four layers of copper, a non-magnetic material, and cobalt, a ferromagnetic material, are alternately formed in four layers under the magnetic recording reading part of the head gap film.
  • a Ni—Fe film which is a hard magnetic film, is formed on portions other than the lower portion of the upper core.
  • a terminal, an upper gap film, an upper shield film, a light gap film, and an upper core were formed to produce a recording head.
  • the film forming apparatus shown in FIG. 1 was used in the same manner as in Example 1.
  • the laminated body of the present invention was formed on the surface of a glass disk of 3.5 inches in diameter and 0.5 in thickness by the film forming apparatus shown in FIG. First, the specimen surface was degreased and washed, and then attached to the sample holder 105 in the vacuum vessel 101. Then after evacuating the vacuum vessel 1 0 1 below 5 X 1 0- 6 Torr by a vacuum pump 1 0 6, the acceleration voltage 1 0 k V using an ion source 1 0 2, lead-out electrode current density 1. 5 mAZcm Irradiate with argon for 10 minutes under the conditions of 2 to clean the substrate surface. Leaning was performed.
  • Co and Cr placed in the evaporation crucible 104 were heated by irradiating an electron beam from the electron gun 103 to the Co and Cr, and Co and Cr were co-evaporated by an electron beam evaporation method.
  • C 0 and Cr were each evaporated from separate crucibles, and the deposition amount was controlled independently. The deposition amount was controlled at C o: 6 m / h and C r: 8 mZh, and the film was formed for about 2 minutes. In this way, an underlayer consisting of a mixed film of Co and Cr having a thickness of about 0.3 ⁇ was formed on the glass substrate.
  • the crucible containing Ta is also irradiated with an electron beam, thereby performing ternary electron beam deposition of Co, Cr, and Ta, an acceleration voltage of 10 kV, and an extraction electrode current density.
  • the film was irradiated with argon ions for 12 minutes under the condition of 1.5 mA / cm 2 to form a magnetic film composed of a laminated film composed of Co, Cr, and Ta.
  • the deposition amount of Co was increased so that a ferromagnetic film was formed.
  • the formed ferromagnetic film was a columnar crystal grown in a direction perpendicular to the glass substrate.
  • Such columnar ferromagnetic films are suitable for perpendicular magnetic recording type magnetic disks and magneto-optical disks. According to the present invention, a perpendicular magnetic recording type magnetic disk and magneto-optical disk can be manufactured in a short time.
  • the present invention is realized by a film forming apparatus shown in FIG. 1 on a substrate in which an MS wafer is formed by doping trivalent and pentavalent impurity atoms on a Si wafer substrate having a diameter of 2 inches and a thickness of 1 mm.
  • Acceleration voltage 1 0 k V using an ion source 1 0 2 in the semiconductor forming process also went the same vacuum chamber 1 0 1 (degree of vacuum 5 X 1 0- 5 Torr or less), the extraction electrode current density 1.
  • a 1 N and Cu placed in the evaporating crucible 104 are heated by irradiating an electron beam from the electron gun 103 with the electron beam evaporation method.
  • a 1 N and Cu were simultaneously vapor-deposited.
  • a 1 N and Cu respectively These were evaporated from separate crucibles and the amount of evaporation was controlled independently.
  • the deposition rate was kept constant at A 1 N: 6 m / h and Cu 8 ⁇ m / h, and the film was formed for about 12 minutes.
  • an insulating film made of a mixed film of A1N and Cu having a thickness of about 2 ⁇ m was formed on the Si semiconductor substrate.
  • the formed insulating film was columnar crystals perpendicular to the substrate surface.
  • Some MOS transistors used for power control raise the operating temperature to about 200 ° C.
  • the insulating film on the element peels or cracks due to thermal stress. It is feared that problems such as intrusion may occur.
  • the insulating film is made of a columnar crystal as in the present invention, it is possible to provide a semiconductor element which is not easily cracked by thermal stress and has high reliability even when used for a long time.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Thin Magnetic Films (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

L'invention concerne un procédé de production d'un stratifié de faible coût comprenant une couche mince fonctionnelle. Plus concrètement, on soumet un substrat à un rayonnement avec un faisceau d'ions dans une atmosphère contenant différents types de matières vaporisées afin de déposer différentes matières les unes sur les autres.
PCT/JP1996/002907 1996-10-07 1996-10-07 Procede de production d'un corps stratifie et corps stratifie WO1998015668A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/JP1996/002907 WO1998015668A1 (fr) 1996-10-07 1996-10-07 Procede de production d'un corps stratifie et corps stratifie

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP1996/002907 WO1998015668A1 (fr) 1996-10-07 1996-10-07 Procede de production d'un corps stratifie et corps stratifie

Publications (1)

Publication Number Publication Date
WO1998015668A1 true WO1998015668A1 (fr) 1998-04-16

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PCT/JP1996/002907 WO1998015668A1 (fr) 1996-10-07 1996-10-07 Procede de production d'un corps stratifie et corps stratifie

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002042743A1 (fr) * 2000-11-26 2002-05-30 Daiken Chemical Co., Ltd Sonde pour microscope a balayage realisee par usinage a faisceau d'ions focalise
JP2007286066A (ja) * 2007-05-28 2007-11-01 Yoshikazu Nakayama 集束イオンビーム加工による走査型顕微鏡用プローブ

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0196823A (ja) * 1987-10-08 1989-04-14 Hitachi Maxell Ltd 磁気記録媒体の製造方法
JPH02240829A (ja) * 1989-03-14 1990-09-25 Matsushita Electric Ind Co Ltd 磁気記録媒体の製造方法
JPH0462814A (ja) * 1990-06-25 1992-02-27 Toshiba Corp 人工格子膜の製造方法
JPH05258272A (ja) * 1991-03-06 1993-10-08 Nippon Digital Equip Kk 垂直磁気記録媒体及びその製造方法
JPH06302877A (ja) * 1993-04-13 1994-10-28 Matsushita Electric Ind Co Ltd 磁気抵抗効果素子及びそれを用いた磁気抵抗効果型薄膜磁気ヘッド

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0196823A (ja) * 1987-10-08 1989-04-14 Hitachi Maxell Ltd 磁気記録媒体の製造方法
JPH02240829A (ja) * 1989-03-14 1990-09-25 Matsushita Electric Ind Co Ltd 磁気記録媒体の製造方法
JPH0462814A (ja) * 1990-06-25 1992-02-27 Toshiba Corp 人工格子膜の製造方法
JPH05258272A (ja) * 1991-03-06 1993-10-08 Nippon Digital Equip Kk 垂直磁気記録媒体及びその製造方法
JPH06302877A (ja) * 1993-04-13 1994-10-28 Matsushita Electric Ind Co Ltd 磁気抵抗効果素子及びそれを用いた磁気抵抗効果型薄膜磁気ヘッド

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
SURFACE AND TECHNOLOGY, 1994, Vol. 66, No. 1/3, SHOICHI NAKASHIMA et al., "Zr02 and Cu Functionally Gradient Materials Prepared by a Dynamic Ion Mixing Process", p. 330-333. *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002042743A1 (fr) * 2000-11-26 2002-05-30 Daiken Chemical Co., Ltd Sonde pour microscope a balayage realisee par usinage a faisceau d'ions focalise
US6759653B2 (en) 2000-11-26 2004-07-06 Yoshikazu Nakayama Probe for scanning microscope produced by focused ion beam machining
JP2007286066A (ja) * 2007-05-28 2007-11-01 Yoshikazu Nakayama 集束イオンビーム加工による走査型顕微鏡用プローブ

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