WO1998037575A1 - Surface treatment method and apparatus therefor - Google Patents
Surface treatment method and apparatus therefor Download PDFInfo
- Publication number
- WO1998037575A1 WO1998037575A1 PCT/JP1998/000629 JP9800629W WO9837575A1 WO 1998037575 A1 WO1998037575 A1 WO 1998037575A1 JP 9800629 W JP9800629 W JP 9800629W WO 9837575 A1 WO9837575 A1 WO 9837575A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- surface treatment
- treatment
- treated
- liquid
- treatment liquid
- Prior art date
Links
- 238000004381 surface treatment Methods 0.000 title claims abstract description 78
- 238000000034 method Methods 0.000 title claims abstract description 44
- 239000007788 liquid Substances 0.000 claims abstract description 80
- 238000012545 processing Methods 0.000 claims abstract description 62
- 238000011282 treatment Methods 0.000 claims abstract description 61
- 238000010438 heat treatment Methods 0.000 claims abstract description 34
- 238000009835 boiling Methods 0.000 claims abstract description 4
- 238000004380 ashing Methods 0.000 claims abstract 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 25
- 230000001590 oxidative effect Effects 0.000 claims description 16
- 230000002378 acidificating effect Effects 0.000 claims description 6
- 239000003960 organic solvent Substances 0.000 claims description 6
- 230000001678 irradiating effect Effects 0.000 claims description 5
- 239000002253 acid Substances 0.000 claims description 3
- 238000005530 etching Methods 0.000 abstract description 8
- 238000005108 dry cleaning Methods 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 3
- 238000007670 refining Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 29
- 238000012986 modification Methods 0.000 description 12
- 230000004048 modification Effects 0.000 description 12
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 8
- 238000002474 experimental method Methods 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910001882 dioxygen Inorganic materials 0.000 description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 235000019441 ethanol Nutrition 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 235000002918 Fraxinus excelsior Nutrition 0.000 description 3
- 239000002956 ash Substances 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- -1 but other than that Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000008399 tap water Substances 0.000 description 1
- 235000020679 tap water Nutrition 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Definitions
- the present invention relates to a surface treatment technique for removing inorganic or organic substances by etching and removing the surface of a material to be treated or improving the wettability by modifying the surface.
- Japanese Patent Application Laid-Open Nos. Hei 2-2-271834, Hei 3-2-36475, Japanese Patent Laid-open Hei 5-23979, Hei 5-2795 As disclosed in, for example, Japanese Patent Publication No. 190, a plasma is generated by performing glow discharge under a pressure near the atmospheric pressure to uniformly or locally treat a large area of a material to be treated. Methods for performing surface modification such as etching, asshing, thin film formation, and hydrophilization are known. This In this case, although a vacuum device is not required, there is a problem in that discharge control for generating stable plasma and an electrode device are complicated.
- the present invention has been made to solve the above-described conventional problems, and the object thereof is to eliminate the need for an additional step for rinsing and drying the wet method, Also, it does not require expensive and large-scale equipment for vacuum and decompression, allows simple configuration and miniaturization of the equipment, and makes surface modification such as wettability improvement, asshing and etching relatively easy.
- Another object of the present invention is to provide a novel surface treatment method that can be performed at low cost.
- Another object of the present invention is to provide a novel apparatus for realizing such a surface treatment method. Disclosure of the invention
- a surface treatment method characterized in that a treatment liquid is heated to generate steam, and the surface of the heated object is exposed to the steam.
- the surface of the object to be treated is dry treated with the vapor of the treatment liquid, so that the wettability is improved by appropriately selecting the liquid to be used, without being limited by the shape or material of the object to be treated.
- Various types of surface modification, etching, asshing, and dry cleaning can be performed effectively in a wide range of fields. Also, it does not require any additional steps after processing such as rinsing and drying, which are necessary for ordinary wet processing, and does not require large vacuum equipment in conventional dry processing.
- the handling and processing operations are relatively simple, and the equipment and facilities for this can be simply configured, miniaturized, and processing costs can be significantly reduced. In addition, in-line processing can be performed easily.
- the object to be treated is heated so that its surface temperature is equal to or higher than the boiling point of the treatment liquid, there is no possibility that the treatment liquid will be cooled and liquefied on the surface of the object to be treated, so that the surface treatment can be performed effectively. It is convenient.
- the entire surface of the object to be treated By heating the entire surface of the object to be treated, the entire surface can be treated, or only a desired portion can be selectively treated by heating only a part of the surface. .
- the surface By arranging the object to be treated in an atmosphere containing the vapor of the treatment liquid, the surface can be easily exposed to the vapor and a desired surface treatment can be performed.
- pure water, acidic water or alkaline water is used as the treatment liquid, and by exposing the treatment liquid to the vapor, the surface of the treatment object is modified to improve its wettability, or The surface can be ashed.
- the surface of the workpiece can be etched by using an acid for the treatment liquid and exposing the treatment liquid to the vapor.
- the wettability of the surface of the object to be treated can be improved by using an organic solvent for the treatment liquid.
- an oxidizing liquid may be used as the processing liquid to ashes the surface of the workpiece.
- the auxiliary gas can be mixed with the vapor of the processing liquid, and the surface of the heated object can be exposed to the mixed gas, whereby the desired surface treatment can be performed more effectively. be able to.
- pure water, acidic water, or alkaline water is used as the processing liquid, and an oxidizing gas is used as the auxiliary gas, and the processing liquid is exposed to a mixed gas of the vapor of the processing liquid and the oxidizing gas.
- the surface of the processing object is oxidized, or the wettability of the processing object surface is improved. Can be done.
- the wettability of the surface of the object to be processed can be improved by using an organic solvent as the processing liquid and using a non-oxidizing gas as the auxiliary gas.
- the method comprises at least two asshing steps, at least the last of which is a step of heating the treatment liquid to generate steam, A step of exposing the surface of the object to be treated to the vapor provides a surface treatment method.
- the surface of the non-processed material is first treated using a method having a high absorption rate, and then the organic residue remaining on the surface is subjected to a dry treatment using the vapor of a treatment liquid appropriately selected.
- the apparatus comprises: a steam generator that heats a processing liquid to generate steam; and a heating device that heats an object to be processed, wherein the surface of the object to be heated is converted to the steam.
- a surface treatment apparatus characterized by being exposed. Thereby, the surface treatment method of the present invention can be easily realized.
- the surface treatment device further includes a housing that defines an atmosphere containing the vapor of the treatment liquid, and that the surface of the object is easily exposed to the vapor when the object is disposed in the housing. .
- a heating plate on which the object is placed can be used to directly heat the object.
- a hot air blower for sending hot air to the surface of the object to be processed can be used as a heating device, whereby a large number of objects to be processed are heated substantially uniformly and the surface is simultaneously treated. be able to.
- the heating device can be provided with a device K for irradiating infrared rays or ultraviolet rays, and further, by providing a mask for partially irradiating infrared rays or ultraviolet rays on the surface of the workpiece, A desired portion can be selectively and locally surface-treated.
- a gas supply device for supplying an auxiliary gas mixed with the vapor of the treatment liquid.
- FIG. 1 is a schematic sectional view showing a configuration of a first embodiment of a surface treatment apparatus to which the present invention is applied.
- FIG. 2 is a sectional view showing a modification of the first embodiment.
- FIG. 3 is a sectional view showing another modification of the first embodiment.
- FIG. 4 is a schematic sectional view showing the configuration of a second embodiment of the surface treatment apparatus to which the present invention is applied.
- FIG. 5 is a schematic sectional view showing the configuration of a third embodiment of the surface treatment apparatus to which the present invention is applied.
- FIG. 1 schematically shows the structure of a first embodiment of a preferred apparatus for performing the surface treatment method according to the present invention.
- the surface treatment apparatus includes a housing 2 defining a processing chamber 1 therein, in which a heating plate 4 set on a transfer table 3 is disposed, and a workpiece 5 is placed thereon. To be placed.
- the housing 2 is connected to a steam generator comprising a container 7 containing a processing liquid 6 and a heater 8 for heating the container.
- the upper part in the container 7 communicates with the inside of the processing chamber 1 via a pipe 10 provided with an introduction valve 9. Further, the housing communicates with the outside via an exhaust valve 11.
- Various liquid types such as water (including pure water and tap water), acidic water, alkaline water, oxidizing liquid, organic solvent, and acid can be used for the treatment liquid 6 according to the desired surface treatment. It can. Specifically, considering the ease of handling and the impact on the environment, water is most preferred as the treatment liquid, but other than that, hydrogen peroxide, ethyl alcohol, hydrogen fluoride, etc. are used .
- the processing liquid 6 inside the container 7 is heated and evaporated by the heater 8, and the vapor is fed into the processing chamber 1 via the pipe 10.
- the object 5 in the processing chamber 1 is heated to an appropriate temperature by the heating plate 4.
- the object to be treated is subjected to a desired surface treatment by exposing the exposed surface to the vapor of the treatment liquid 6 introduced into the treatment chamber 1.
- the processed object 5 is taken out of the processing chamber 1 by driving the transfer table 3, and then a new object is carried in, and the above-mentioned surface treatment step is repeated.
- the amount of steam inside the processing chamber 1 is determined by the volume of the processing chamber, the method of setting the workpiece, the type and speed of surface treatment, and the amount of supply by the introduction valve 9 and the amount of discharge by the exhaust valve 11 And is controlled by adjusting
- the temperature of the heating plate is adjusted so that the vapor of the processing liquid 6 does not liquefy on the surface of the workpiece 5.
- the vapor in the processing chamber 1 maintain a vapor phase at least during the surface treatment, and that the inside of the housing 2 be cooled so as not to be liquefied. Therefore, separate heating means is provided, or the heating plate or heater is used to If the ring 2 itself is also configured to be heated, the efficiency of the surface treatment increases, which is advantageous.
- the housing 2 in order to efficiently perform the surface treatment of the present invention, it is effective to make the housing 2 as small as possible to reduce the volume of the processing chamber 1 or to increase the arrangement of objects to be processed in the processing chamber.
- Pure water was used as the processing liquid 6, and steam was generated and introduced into the processing chamber 1.
- a thin plate of aluminum oxide was placed on the heating plate 4 as the treatment object 5, and the thin plate was treated for 5 minutes at a surface temperature of about 200 ⁇ .
- the contact angle was 64 ° before the treatment, but was 6 ° after the treatment, and the wettability to water could be improved.
- Example 2 In the same manner as in Example 1, pure water was used as the processing liquid 6, and steam was generated and introduced into the processing chamber 1. A silicon plate coated with an organic resist was placed on the heating plate 4 as the object 5 to be treated, and the resist plate was treated at a surface temperature of about 200 ° for 10 minutes. As a result, the resist could be removed from the silicon plate surface.
- Hydrogen fluoride was used as the processing liquid 6, and its vapor was generated and introduced into the processing chamber 1.
- a quartz plate was placed on the heating table 4 as the object 5 to be treated, and the surface temperature was set to 100 ° C. and the treatment was performed for 60 minutes. As a result, the surface of the quartz plate could be etched.
- FIG. 2 schematically shows the structure of a modification of the surface treatment apparatus of FIG.
- a warm air blower 12 is provided in place of a heating plate so as to blow warm air downward to an upper portion of the chamber 1 to be processed.
- a plurality of plate-like workpieces 5 are vertically arranged on the mounting table 13 on the transfer table 3 so that the hot air can be easily hit.
- FIG. 3 schematically shows the structure of another modification of the surface treatment apparatus of FIG.
- an infrared irradiation device such as an infrared lamp with a reflecting plate is provided instead of a heating plate and provided downward on the upper part of the processing chamber 1.
- a mask 15 provided with an opening corresponding to a desired processing portion of the workpiece is arranged.
- the steam of the processing liquid 6 is introduced into the processing chamber 1 from the steam generator while irradiating infrared rays so that only the desired processing portion is heated.
- the entire surface of the object 5 to be exposed is exposed to the vapor, but a desired surface treatment is locally performed only on the heated processing portion.
- the infrared irradiation device 14 instead of the infrared irradiation device 14, another heat radiation device such as an ultraviolet irradiation device can be used.
- the UV irradiation device has a feature that the temperature difference between the irradiated portion and the non-irradiated portion is larger than that of the infrared irradiation device, so that the local surface treatment can be performed more precisely.
- FIG. 4 schematically shows the structure of a second embodiment of the surface treatment apparatus according to the present invention.
- This surface treatment device is provided with a gas inlet port 16 that branches off into a pipeline 10.
- a valve 17 By adjusting a valve 17, an auxiliary gas supplied from outside can be supplied.
- it differs from the apparatus of the first embodiment shown in FIG. 1 in that it can be mixed with the vapor of the processing liquid 6 and introduced into the processing chamber 1.
- a desired surface treatment can be more effectively performed by appropriately combining the treatment liquid 6 and the auxiliary gas and exposing the heated object to the mixed gas.
- Various kinds of liquids described in the first embodiment can be used as the treatment liquid.
- An oxidizing gas or a non-oxidizing gas can be selected as the auxiliary gas depending on the purpose of the treatment.
- wettability can be improved by a combination of water or hydrogen peroxide and oxygen gas, or a combination of hydrogen peroxide or ethyl alcohol and nitrogen gas.
- asshing can be performed by a combination of a hydrogen peroxide solution and an oxygen gas or a nitrogen gas.
- ozone as an auxiliary gas, the effect of assuring can be enhanced.
- Pure water was used as the processing liquid 6, and oxygen gas was used as the auxiliary gas, and the mixed gas was introduced into the processing chamber 1.
- a thin plate of aluminum oxide was placed on the heating plate 4 as the object to be treated 5 and exposed to the mixed gas to perform a surface treatment. Thereby, the wettability of the aluminum oxide thin plate surface could be improved.
- FIG. 5 schematically shows the structure of a third embodiment of the surface treatment apparatus according to the present invention.
- a container 7 containing a treatment liquid 6 is arranged on a heating plate 4 in a treatment chamber 1 and a gas inlet 16 for supplementarily supplying a gas selected from the outside is provided.
- the vapor of the processing liquid 6 is generated directly in the processing chamber 1 with the above configuration, so that the vapor flows through the pipeline 10 as in the first and second embodiments. Since there is no danger of cooling during the passage, more efficient surface treatment is possible.
- the present invention provides a relatively simple process and apparatus by evaporating a treatment liquid and exposing the vapor to a heated object.
- the purpose of the present invention is to perform the intended surface treatment by using the method described above.
- various changes and modifications can be made thereto.
- a desired portion of the processing target can be locally surface-treated.
- the heating apparatus shown in FIG. 2 or FIG. 3 can be used in place of the heating plate 5 in the surface treatment apparatus of the second or third embodiment.
- the at least two asshing steps are performed.
- most of the organic substances are removed in a short time by using a method with a high association in the first assuring step, and at least the surface treatment method of the present invention described above in the last asssing step is used.
- the organic residues that could not be completely removed can be completely removed from the surface of the workpiece. As a result, it is possible to relatively and efficiently completely flush the surface of the object to be treated.
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Abstract
A processing liquid (6) in a vessel (7) is heated by a heater (8) to evaporate, and the resulting vapor is controlled by a valve (9) and introduced into a treatment chamber (1) through a pipeline (10). In the treatment chamber (1), articles (5) being treated are placed on a heating plate (4) set on a conveying table (3). The articles being treated are heated by the heating plate so that a surface temperature of the articles being treated rises above, for example, a boiling point of the processing liquid. Surfaces of the articles being treated are exposed to vapor of the processing liquid introduced into the treatment chamber, so that surface refining such as improving of wettability and surface treatments such as ashing, etching and dry cleaning are performed depending upon a kind of the processing liquid used. Effects of the surface treatment can be enhanced by mixing an auxiliary gas into the vapor of the processing liquid and exposing the surfaces of the articles being treated to the mixed gas. The articles being treated, having been subjected to treatment are removed from the treatment chamber by driving the conveying table (3), subsequently introducing new articles being treated and repeating the surface treatment procedure.
Description
糸田 β 表面処理方法及びその装置 技術分野 Itoda β surface treatment method and its equipment
本発明は、 被処理材の表面をェッチングゃァッシングして無機物や有機物を除 去したり、 改質して濡れ性を改善する表面処理技術に関する。 背景技術 The present invention relates to a surface treatment technique for removing inorganic or organic substances by etching and removing the surface of a material to be treated or improving the wettability by modifying the surface. Background art
従来より、 半導体技術の発達に伴い、 この種の表面処理のために開発された様 々な技術が知られている。 例えば、 基板などの被処理材の表面から有機物を除去 する方法として、 有機溶剤によるゥエツ 卜洗浄法や、 オゾン ,紫外線などを照射 して有機物に化学反応を生じさせることにより除去するドラィ洗浄法がある。 し力、し、 上記ゥエツ ト洗浄法では、 目的とする処理を施す工程に加えて、 処理 溶剤を除去するリンス工程、 及び基板を乾燥させる工程を要するだけでなく、 こ れらの追加工程を実行するために固定された設備が必要であり、 製造コス卜が高 くなるという課題があった。 Conventionally, with the development of semiconductor technology, various technologies developed for this kind of surface treatment are known. For example, as a method for removing organic substances from the surface of a material to be treated such as a substrate, an inkjet cleaning method using an organic solvent, or a dry cleaning method for removing organic substances by irradiating them with ozone, ultraviolet rays, or the like to cause a chemical reaction. is there. The above-mentioned jet cleaning method requires not only a step of performing a desired treatment, but also a rinsing step of removing a processing solvent and a step of drying a substrate, and also requires these additional steps. There was a problem that fixed equipment was required to execute the process, and the manufacturing cost was high.
また、 従来のドライ洗浄方法においては、 分子量の大きい有機物の除去能力が 低いため、 十分な洗浄効果は期待できない。 これを解決するために、 真空中で発 生させたプラズマを用いて、 有機物又は無機物を除去したり、 エッチングやアツ シングを行う方法が開発されている。 し力、し、 真空チャンバや真空ポンプなどの 特別な装置が必要で、 設備全体が複雑化し、 高価なためにコストが高くなる。 ま た、 放電のための減圧に時間がかかるため、 処理能力が低い。 このため、 枚葉処 理が困難であり、 ィンライン化できないなどの問題があった。 In addition, in the conventional dry cleaning method, a sufficient cleaning effect cannot be expected because the ability to remove organic substances having a high molecular weight is low. In order to solve this problem, a method has been developed in which organic or inorganic substances are removed, and etching or asshing is performed using plasma generated in a vacuum. Special equipment such as vacuum chambers and vacuum pumps are required, complicating the entire equipment and increasing its cost due to its high cost. In addition, it takes a long time to reduce the pressure for discharging, so the processing capacity is low. For this reason, there was a problem that single-wafer processing was difficult and in-line processing was not possible.
これに対し、 例えば特開平 2— 2 8 1 7 3 4号公報、 特開平 3— 2 3 6 4 7 5 号公報、 特開平 5— 2 3 5 7 9号公報、 特開平 5— 2 7 5 1 9 0号公報などに開 示されるように、 大気圧近傍の圧力下でグロ一放電させてプラズマを発生させる ことにより、 被処理材の大面積を均一に又は局所的に表面処理して、 エッチング やアツシング、 薄膜形成、 親水化などの表面改質を行う方法が知られている。 こ
の場合は、 真空装置を必要としないとはいえ、 安定したプラズマを発^させる放 電の制御や電極装置が複雑になるという問題がある。 On the other hand, for example, Japanese Patent Application Laid-Open Nos. Hei 2-2-271834, Hei 3-2-36475, Japanese Patent Laid-open Hei 5-23979, Hei 5-2795 As disclosed in, for example, Japanese Patent Publication No. 190, a plasma is generated by performing glow discharge under a pressure near the atmospheric pressure to uniformly or locally treat a large area of a material to be treated. Methods for performing surface modification such as etching, asshing, thin film formation, and hydrophilization are known. This In this case, although a vacuum device is not required, there is a problem in that discharge control for generating stable plasma and an electrode device are complicated.
そこで、 本発明は、 上述した従来の問題点を解消するためになされたものであ り、 その目的とするところは、 ウエッ ト法のリ ンスや乾燥のための追加工程を必 要とせず、 また真空や減圧のための高価で大型の設備を必要とせず、 装置を簡単 に構成しかつ小型化でき、 濡れ性改善などの表面改質ゃアツシング、 エッチング などの表面処理を、 比較的容易にかつ低コス卜で行うことができる新規な表面処 理方法を提供することにある。 Therefore, the present invention has been made to solve the above-described conventional problems, and the object thereof is to eliminate the need for an additional step for rinsing and drying the wet method, Also, it does not require expensive and large-scale equipment for vacuum and decompression, allows simple configuration and miniaturization of the equipment, and makes surface modification such as wettability improvement, asshing and etching relatively easy. Another object of the present invention is to provide a novel surface treatment method that can be performed at low cost.
また、 本発明の目的は、 かかる表面処理方法を実現するための新規な装置を提 供することにある。 発明の開示 Another object of the present invention is to provide a novel apparatus for realizing such a surface treatment method. Disclosure of the invention
本発明の或る側面によれば、 処理液を加熱して蒸気を発生させ、 加熱した被処 理物の表面を前記蒸気に曝露することを特徴とする表面処理方法が提供される。 被処理物の表面は、 処理液の蒸気により ドライで処理されるので、 被処理物の形 状や材質に制限されることなく、 使用する液を適当に選択することにより、 濡れ 性の向上などの表面改質、 エツチング、 アツシング、 ドラィ洗浄の各種表 liil'処理 を広い範囲の分野で効果的に行うことができる。 また、 通常のゥエツ 卜処理に必 要なリンス ·乾燥などの処理後の追加工程を何ら必要とせず、 また従来のドライ 処理における大型の真空設備を必要としないので、 処理液や被処理材の取扱い及 び処理作業が比較的簡単であり、 そのための装置及び設備を簡単に構成し、 小型 化することができ、 処理コス トを大幅に低減できる。 また、 処理作業のインライ ン化ゃ現場における処理も容易に行うことができる。 According to one aspect of the present invention, there is provided a surface treatment method characterized in that a treatment liquid is heated to generate steam, and the surface of the heated object is exposed to the steam. The surface of the object to be treated is dry treated with the vapor of the treatment liquid, so that the wettability is improved by appropriately selecting the liquid to be used, without being limited by the shape or material of the object to be treated. Various types of surface modification, etching, asshing, and dry cleaning can be performed effectively in a wide range of fields. Also, it does not require any additional steps after processing such as rinsing and drying, which are necessary for ordinary wet processing, and does not require large vacuum equipment in conventional dry processing. The handling and processing operations are relatively simple, and the equipment and facilities for this can be simply configured, miniaturized, and processing costs can be significantly reduced. In addition, in-line processing can be performed easily.
被処理物は、 その表面の温度が処理液の沸点以上になるように加熱すると、 処 理液が被処理物表面で冷却されて液化する虞が無いので、 有効に表面処理するこ とができ、 好都合である。 If the object to be treated is heated so that its surface temperature is equal to or higher than the boiling point of the treatment liquid, there is no possibility that the treatment liquid will be cooled and liquefied on the surface of the object to be treated, so that the surface treatment can be performed effectively. It is convenient.
被処理物表面は、 これを全面的に加熱することにより、 該表面全体を処理する ことができ、 又は部分的にのみ加熱することにより、 所望の部分のみを選択的に 表面処理することができる。
また、 被処理物は、 処理液の蒸気を含む雰囲気内に配置することにより、 その 表面を容易に前記蒸気に曝露させ、 所望の表面処理を行うことができる。 By heating the entire surface of the object to be treated, the entire surface can be treated, or only a desired portion can be selectively treated by heating only a part of the surface. . In addition, by arranging the object to be treated in an atmosphere containing the vapor of the treatment liquid, the surface can be easily exposed to the vapor and a desired surface treatment can be performed.
或る実施例によれば、 前記処理液に純水、 酸性水又はアルカリ水を使用し、 そ の蒸気に曝露することにより、 被処理物表面を改質してその濡れ性を向上させ、 又は該表面をァッシングすることができる。 According to one embodiment, pure water, acidic water or alkaline water is used as the treatment liquid, and by exposing the treatment liquid to the vapor, the surface of the treatment object is modified to improve its wettability, or The surface can be ashed.
別の実施例によれば、 前記処理液に酸を使用し、 その蒸気に曝露することによ り、 被処理物表面をエッチングすることができる。 また、 別の実施例では、 前記 処理液に有機溶剤を使用することにより、 被処理物表面の濡れ性を向上させるこ とができる。 更に別の実施例では、 前記処理液に酸化性液を使用し、 被処理物表 面をアツシングすることができる。 According to another embodiment, the surface of the workpiece can be etched by using an acid for the treatment liquid and exposing the treatment liquid to the vapor. In another embodiment, the wettability of the surface of the object to be treated can be improved by using an organic solvent for the treatment liquid. In still another embodiment, an oxidizing liquid may be used as the processing liquid to ashes the surface of the workpiece.
また、 本発明によれば、 処理液の蒸気に補助ガスを混合し、 その混合ガスに加 熱した被処理物の表面を曝露することができ、 それにより所望の表面処理をより 効果的に行うことができる。 Further, according to the present invention, the auxiliary gas can be mixed with the vapor of the processing liquid, and the surface of the heated object can be exposed to the mixed gas, whereby the desired surface treatment can be performed more effectively. be able to.
或る実施例によれば、 処理液に純水、 酸性水又はアルカリ水を使用し、 かつ補 助ガスに酸化性気体を用 、、 該処理液の蒸気と酸化性気体との混合ガスに曝露さ せることにより、 被処理物表面の濡れ性を向上させることができる。 According to an embodiment, pure water, acidic water, or alkaline water is used as the processing liquid, and an oxidizing gas is used as the auxiliary gas, and the processing liquid is exposed to a mixed gas of the vapor of the processing liquid and the oxidizing gas. By doing so, the wettability of the surface of the object to be treated can be improved.
別の実施例によれば、 処理液に酸化性液を用い、 かつ補助ガスに酸化性気体を 使用することにより、 被処理物表面を酸化処理し、 又は該被処理物表面の濡れ性 を向上させることができる。 According to another embodiment, by using an oxidizing liquid as the processing liquid and using an oxidizing gas as the auxiliary gas, the surface of the processing object is oxidized, or the wettability of the processing object surface is improved. Can be done.
更に別の実施例では、 処理液に有機溶剤を用い、 かつ補助ガスに非酸化性気体 を使用することにより、 被処理物表面の濡れ性を向上させることができる。 また、 本発明によれば、 被処理物の表面をアツシングするために、 2回以上の アツシング工程からなり、 その少なくとも最後のァッシング工程が、 処理液を加 熱して蒸気を発生させ、 加熱した前記被処理物の表面を前記蒸気に曝露する過程 からなることを特徴とする表面処理方法が提供される。 これにより、 先にアツシ ングレー卜の高い方法を用いて非処理物表面を処理し、 後で適当に選択した処理 液の蒸気を用いてドライ処理することにより、 該表面に残存した有機物残渣を比 較的容易にかつ効率よく完全にアツシングすることができ、 その結果、 全体とし てアツシングの処理効率を向上させることができる。
本発明の別の側面によれば、 処理液を加熱して蒸気を発生させる蒸気発生装置 と、 被処理物を加熱する加熱装置とからなり、 加熱した前記被処理物の表面を前 記蒸気に曝露させるようにしたことを特徴とする表面処理装置が提供される。 こ れにより、 本発明の表面処理方法を容易に実現することができる。 In still another embodiment, the wettability of the surface of the object to be processed can be improved by using an organic solvent as the processing liquid and using a non-oxidizing gas as the auxiliary gas. Further, according to the present invention, in order to ashes the surface of the object to be treated, the method comprises at least two asshing steps, at least the last of which is a step of heating the treatment liquid to generate steam, A step of exposing the surface of the object to be treated to the vapor provides a surface treatment method. As a result, the surface of the non-processed material is first treated using a method having a high absorption rate, and then the organic residue remaining on the surface is subjected to a dry treatment using the vapor of a treatment liquid appropriately selected. Complete asshing can be performed relatively easily and efficiently, and as a result, the processing efficiency of asshing can be improved as a whole. According to another aspect of the present invention, the apparatus comprises: a steam generator that heats a processing liquid to generate steam; and a heating device that heats an object to be processed, wherein the surface of the object to be heated is converted to the steam. There is provided a surface treatment apparatus characterized by being exposed. Thereby, the surface treatment method of the present invention can be easily realized.
前記表面処理装置が、 処理液の蒸気を含む雰囲気を画定するハウジングを更に 備え、 該ハウジング内に被処理物を配置すると、 容易に被処理物表面を前記蒸気 に曝露できるので、 好 合である。 It is preferable that the surface treatment device further includes a housing that defines an atmosphere containing the vapor of the treatment liquid, and that the surface of the object is easily exposed to the vapor when the object is disposed in the housing. .
加熱装置として、 被処理物を載置する加熱プレー卜を使用し、 被処理物を直接 加熱することができる。 別の実施例では、 加熱装置として被処理物表面に温風を 送るための温風送風器を用いることができ、 それにより多数の被処理物全体を略 均一に加熱して、 同時に表面処理することができる。 As the heating device, a heating plate on which the object is placed can be used to directly heat the object. In another embodiment, a hot air blower for sending hot air to the surface of the object to be processed can be used as a heating device, whereby a large number of objects to be processed are heated substantially uniformly and the surface is simultaneously treated. be able to.
また別の実施例では、 加熱装置に赤外線又は紫外線を照射する装 Kを使川する ことができ、 更に被処理物表面に赤外線又は紫外線を部分的に照射するためのマ スクを備えることにより、 所望の部分を選択的にかつ局所的に表面処理すること ができる。 In another embodiment, the heating device can be provided with a device K for irradiating infrared rays or ultraviolet rays, and further, by providing a mask for partially irradiating infrared rays or ultraviolet rays on the surface of the workpiece, A desired portion can be selectively and locally surface-treated.
また、 本発明によれば、 所望の表面処理をより効果的に行うために、 処理液の 蒸気に混合する補助ガスを供給するためのガス供給装置を更に備えると好都合で ある。 図面の簡単な説明 Further, according to the present invention, in order to more effectively perform a desired surface treatment, it is advantageous to further include a gas supply device for supplying an auxiliary gas mixed with the vapor of the treatment liquid. BRIEF DESCRIPTION OF THE FIGURES
第 1図は、 本発明を適用した表面処理装置の第 1実施例の構成を示す概略断面 図である。 FIG. 1 is a schematic sectional view showing a configuration of a first embodiment of a surface treatment apparatus to which the present invention is applied.
第 2図は、 第 1実施例の変形例を示す断面図である。 FIG. 2 is a sectional view showing a modification of the first embodiment.
第 3図は、 第 1実施例の別の変形例を示す断面図である。 FIG. 3 is a sectional view showing another modification of the first embodiment.
第 4図は、 本発明を適用した表面処理装置の第 2実施例の構成を示す概略断面 図である。 FIG. 4 is a schematic sectional view showing the configuration of a second embodiment of the surface treatment apparatus to which the present invention is applied.
第 5図は、 本発明を適用した表面処理装置の第 3実施例の構成を示す概略断面 図である。
発明を実施するための最良の形態 FIG. 5 is a schematic sectional view showing the configuration of a third embodiment of the surface treatment apparatus to which the present invention is applied. BEST MODE FOR CARRYING OUT THE INVENTION
第 1図には、 本発明による表面処理方法を実施するための好適な装置の第 1実 施例の構造が概略的に示されている。 この表面処理装置は、 その内部に処理室 1 を画定するハウジング 2を備え、 該処理室には搬送テーブル 3上にセッ トされた 加熱プレート 4が配置され、 その上に被処理物 5を載置するようになつている。 ハウジング 2は、 処理液 6を入れた容器 7と該容器を加熱するヒータ 8とからな る蒸気発生装置に接続されている。 容器 7内の上部は、 導入バルブ 9を設けた管 路 1 0を介して処理室 1内に連通している。 また前記ハウジングは、 排気バルブ 1 1を介して外部に連通している。 FIG. 1 schematically shows the structure of a first embodiment of a preferred apparatus for performing the surface treatment method according to the present invention. The surface treatment apparatus includes a housing 2 defining a processing chamber 1 therein, in which a heating plate 4 set on a transfer table 3 is disposed, and a workpiece 5 is placed thereon. To be placed. The housing 2 is connected to a steam generator comprising a container 7 containing a processing liquid 6 and a heater 8 for heating the container. The upper part in the container 7 communicates with the inside of the processing chamber 1 via a pipe 10 provided with an introduction valve 9. Further, the housing communicates with the outside via an exhaust valve 11.
処理液 6には、 目的とする表面処理に応じて水 (純水、 水道水を^む) 、 酸性 水、 アルカリ水、 酸化性液、 有機溶剤、 酸などの様々な液種を用いることができ る。 具体的には、 取扱いの容易さ及び環境への影響などを考慮すると、 処现液と して水が最も好ましいが、 それ以外に過酸化水素水、 エチルアルコール、 フッ化 水素などが使用される。 Various liquid types such as water (including pure water and tap water), acidic water, alkaline water, oxidizing liquid, organic solvent, and acid can be used for the treatment liquid 6 according to the desired surface treatment. it can. Specifically, considering the ease of handling and the impact on the environment, water is most preferred as the treatment liquid, but other than that, hydrogen peroxide, ethyl alcohol, hydrogen fluoride, etc. are used .
容器 7内部の処理液 6をヒータ 8により加熱して蒸発させ、 その蒸気を管路 1 0を介して処理室 1内に送給する。 処理室 1内の被処理物 5は、 加熱プレート 4 により適当な温度に加熱されている。 前記被処理物は、 その露出面が処理室 1内 に導入された処理液 6の蒸気に曝露されることにより、 所望の表面処理が行われ る。 処理済みの被処理物 5は、 搬送テーブル 3を駆動して処理室 1から取り出さ れ、 次に新たな被処理物を搬入して、 上記表面処理工程を繰り返し行う。 The processing liquid 6 inside the container 7 is heated and evaporated by the heater 8, and the vapor is fed into the processing chamber 1 via the pipe 10. The object 5 in the processing chamber 1 is heated to an appropriate temperature by the heating plate 4. The object to be treated is subjected to a desired surface treatment by exposing the exposed surface to the vapor of the treatment liquid 6 introduced into the treatment chamber 1. The processed object 5 is taken out of the processing chamber 1 by driving the transfer table 3, and then a new object is carried in, and the above-mentioned surface treatment step is repeated.
処理室 1内部の蒸気量は、 処理室の容積、 被処理物の設置の仕方、 表面処理の 種類 ·速度などの処理条件に応じて、 導入バルブ 9による供給量と排気バルブ 1 1による排出量とを調整することによって制御される。 The amount of steam inside the processing chamber 1 is determined by the volume of the processing chamber, the method of setting the workpiece, the type and speed of surface treatment, and the amount of supply by the introduction valve 9 and the amount of discharge by the exhaust valve 11 And is controlled by adjusting
加熱プレー卜の温度は、 被処理物 5の表面で処理液 6の蒸気が液化しないよう に調整される。 例えば、 前記被処理物の表面温度が前記処理液の沸点以上に加熱 すると、 前記上記の液化を確実に防止できる。 また、 良好な表面処理を行うため には、 処理室 1内の蒸気が少なく とも表面処理の間は蒸気相を維持し、 またハウ ジング 2内面で冷却されて液化しないようにすることが好ましい。 そのため、 別 個の加熱手段を設けて、 又は前記加熱プレート若しくはヒータを利用して ウジ
ング 2自体をも加熱するように構成すると、 表面処理の効率が上がり、 好都合で ある。 The temperature of the heating plate is adjusted so that the vapor of the processing liquid 6 does not liquefy on the surface of the workpiece 5. For example, when the surface temperature of the object to be treated is heated to a temperature equal to or higher than the boiling point of the treatment liquid, the liquefaction can be reliably prevented. In order to perform good surface treatment, it is preferable that the vapor in the processing chamber 1 maintain a vapor phase at least during the surface treatment, and that the inside of the housing 2 be cooled so as not to be liquefied. Therefore, separate heating means is provided, or the heating plate or heater is used to If the ring 2 itself is also configured to be heated, the efficiency of the surface treatment increases, which is advantageous.
更に本発明の表面処理を効率良く行うために、 ハウジング 2をできる限り小型 化して処理室 1の容積を小さく したり、 処理室内における被処理物の配置を高く すると効果的である。 Further, in order to efficiently perform the surface treatment of the present invention, it is effective to make the housing 2 as small as possible to reduce the volume of the processing chamber 1 or to increase the arrangement of objects to be processed in the processing chamber.
第 1図の表面処理装置を使用し、 処理液 6として様々な液種を用いて実験を行 つたところ、 以下のような結果が得られた。 Experiments were performed using the surface treatment apparatus shown in Fig. 1 and various liquid types as the treatment liquid 6, and the following results were obtained.
(実施例 1 ) (Example 1)
処理液 6として純水を用い、 水蒸気を発生させて処理室 1内に導入した。 被処 理物 5として酸化アルミニウムの薄板を加熱プレート 4上に載置し、 該薄板の表 面温度を約 2 0 0 ^として 5分間処理を行った。 前記酸化アルミニウム薄板^而 の接触角を接触角計によって測定した結果、 処理前は 6 4 ° であったが、 処理後 に 6 ° となり、 水に対する濡れ性を向上させることができた。 Pure water was used as the processing liquid 6, and steam was generated and introduced into the processing chamber 1. A thin plate of aluminum oxide was placed on the heating plate 4 as the treatment object 5, and the thin plate was treated for 5 minutes at a surface temperature of about 200 ^. As a result of measuring the contact angle of the aluminum oxide thin plate with a contact angle meter, the contact angle was 64 ° before the treatment, but was 6 ° after the treatment, and the wettability to water could be improved.
更に処理液 6をエチルアルコールに変えて同様の実験を行ったところ、 同様に 酸化アルミニウム薄板表面の濡れ性を向上させる表面改質を行うことができた。 Further, the same experiment was performed by changing the treatment liquid 6 to ethyl alcohol. Similarly, the surface modification for improving the wettability of the surface of the aluminum oxide thin plate could be performed.
(実施例 2 ) (Example 2)
上記実施例 1 と同様に、 処理液 6として純水を用い、 水蒸気を発生させて処理 室 1内に導入した。 被処理物 5として有機物であるレジストを塗布したシリコン 板を加熱プレー卜 4上に載置し、 該レジス卜板の表面温度を約 2 0 0 ° として 1 0分間処理した。 その結果、 前記シリコン板表面からレジス卜を除去することが できた。 In the same manner as in Example 1, pure water was used as the processing liquid 6, and steam was generated and introduced into the processing chamber 1. A silicon plate coated with an organic resist was placed on the heating plate 4 as the object 5 to be treated, and the resist plate was treated at a surface temperature of about 200 ° for 10 minutes. As a result, the resist could be removed from the silicon plate surface.
更に処理液 6を過酸化水素水に変えて同様の実験を行ったところ、 同様にシリ コン板のレジストを除去するアツシングを行うことができた。 Further, a similar experiment was conducted by changing the treatment liquid 6 to an aqueous hydrogen peroxide solution, and it was also possible to perform the ashes for removing the resist on the silicon plate.
(実施例 3 ) (Example 3)
処理液 6としてフッ化水素を用い、 その蒸気を発生させて処理室 1内に導入し た。 被処理物 5として水晶板を加熱テーブル 4上に載置し、 その表面温度を 1 0 0 °Cとして 6 0分間処理した。 その結果、 前記水晶板の表面をエッチングするこ とができた。 Hydrogen fluoride was used as the processing liquid 6, and its vapor was generated and introduced into the processing chamber 1. A quartz plate was placed on the heating table 4 as the object 5 to be treated, and the surface temperature was set to 100 ° C. and the treatment was performed for 60 minutes. As a result, the surface of the quartz plate could be etched.
第 2図には、 第 1図の表面処理装置の変形例の構造が概略的に示されている。
この変形例は、 被処理物 5を加熱する手段として、 加熱プレートに変えて温風送 風器 1 2が被処理室 1の上部に下向きに温風を吹き出すように設けられている。 複数の板状の被処理物 5が、 温風が当たり易くなるように、 搬送テーブル 3上の 取付台 1 3に垂直に配列されている。 このように温風送風器 1 2を用いることに より、 複数の被処理物 5及び処理室 1内部の全体を略均等に加熱することができ るので、 バッチ処理に有利である。 FIG. 2 schematically shows the structure of a modification of the surface treatment apparatus of FIG. In this modification, as a means for heating the object 5, a warm air blower 12 is provided in place of a heating plate so as to blow warm air downward to an upper portion of the chamber 1 to be processed. A plurality of plate-like workpieces 5 are vertically arranged on the mounting table 13 on the transfer table 3 so that the hot air can be easily hit. By using the warm air blower 12 in this manner, the plurality of workpieces 5 and the entire inside of the processing chamber 1 can be substantially uniformly heated, which is advantageous for batch processing.
また、 第 2図の表面処理装置を用いて、 上記実施例 1乃至実施例 3と同様に^ れ性向上、 アツシング、 エッチングの各表面処理について実験を行ったところ、 同様に良好な結果を得ることができた。 Experiments were conducted on the surface treatment for improving the resilience, assembling and etching in the same manner as in Examples 1 to 3 above using the surface treatment apparatus shown in FIG. 2, and similarly good results were obtained. I was able to.
第 3図には、 第 1図の表面処理装置の別の変形例の構造が概略的に示されてい る。 この変形例では、 被処理物 5を加熱する手段として、 加熱プレー卜に変えて 反射板付き赤外線ランプのような赤外線照射装置 1 4力 被処理室 1の上部に下 向きに設けられている。 搬送テーブル 3上に水平に載置された板状の被処理物 5 の直ぐ上方には、 該被処理物の所望の処理部分に対応する開口を設けたマスク 1 5を配置する。 FIG. 3 schematically shows the structure of another modification of the surface treatment apparatus of FIG. In this modification, as a means for heating the object 5, an infrared irradiation device such as an infrared lamp with a reflecting plate is provided instead of a heating plate and provided downward on the upper part of the processing chamber 1. Immediately above the plate-shaped workpiece 5 placed horizontally on the transfer table 3, a mask 15 provided with an opening corresponding to a desired processing portion of the workpiece is arranged.
このようにして前記所望の処理部分のみが加熱されるように赤外線を照射しつ つ、 前記蒸気発生装置から処理液 6の蒸気を処理室 1内に導入する。 被処理物 5 は、 その露出する面全体が前記蒸気に曝露されるが、 加熱された前記処理部分の みに局所的に所望の表面処理が行われる。 In this way, the steam of the processing liquid 6 is introduced into the processing chamber 1 from the steam generator while irradiating infrared rays so that only the desired processing portion is heated. The entire surface of the object 5 to be exposed is exposed to the vapor, but a desired surface treatment is locally performed only on the heated processing portion.
赤外線照射装置 1 4に変えて、 紫外線照射装置のような他の熱放射装置を用い ることができる。 紫外線照射装置は、 照射された部分とそうでない部分との温度 差が赤外線照射装置の場合より大きい特徴があるので、 局所的な表面処理をより 精密に行うことができる。 Instead of the infrared irradiation device 14, another heat radiation device such as an ultraviolet irradiation device can be used. The UV irradiation device has a feature that the temperature difference between the irradiated portion and the non-irradiated portion is larger than that of the infrared irradiation device, so that the local surface treatment can be performed more precisely.
第 3図の表面処理装置を用いて、 上記実施例 1乃至実施例 3と同様の実験を行 つたところ、 濡れ性向上、 アツシング、 エッチングの各表面処理について被処理 物のマスク 1 5で選択した部分のみに同様に良好な結果を得ることができた。 第 4図には、 本発明による表面処理装置の第 2実施例の構造が概略的に示され ている。 この表面処理装置は、 管路 1 0に分岐したガス導入口 1 6が設けられて おり、 バルブ 1 7を調整することによって外部から選択したガスを補助的に供給
し、 処理液 6の蒸気と混合して処理室 1内に導入できる点において、 第 1図示の 第 1実施例の装置と異なる。 Using the surface treatment apparatus shown in FIG. 3, experiments similar to those of Examples 1 to 3 were performed. As a result, each of the surface treatments for improving wettability, asshing, and etching was selected using a mask 15 of an object to be treated. Similarly good results could be obtained only in the part. FIG. 4 schematically shows the structure of a second embodiment of the surface treatment apparatus according to the present invention. This surface treatment device is provided with a gas inlet port 16 that branches off into a pipeline 10. By adjusting a valve 17, an auxiliary gas supplied from outside can be supplied. However, it differs from the apparatus of the first embodiment shown in FIG. 1 in that it can be mixed with the vapor of the processing liquid 6 and introduced into the processing chamber 1.
本実施例によれば、 処理液 6と補助ガスとをそれぞれ適当に組み合わせ、 それ らの混合ガスに加熱した被処理物を曝露することによって、 より効果的に所望の 表面処理を行うことができる。 処理液には、 上記第 1実施例について記載した様 々な液種を用いることができる。 補助ガスとしては、 処理の目的に応じて酸化性 の気体又は非酸化性の気体を選択することができる。 According to the present embodiment, a desired surface treatment can be more effectively performed by appropriately combining the treatment liquid 6 and the auxiliary gas and exposing the heated object to the mixed gas. . Various kinds of liquids described in the first embodiment can be used as the treatment liquid. An oxidizing gas or a non-oxidizing gas can be selected as the auxiliary gas depending on the purpose of the treatment.
例えば、 水又は過酸化水素水と酸素ガスとの組み合わせ、 過酸化水素水又はェ チルアルコールと窒素ガスとの組み合わせにより、 濡れ性を向上させることがで きる。 また、 過酸化水素水と酸素ガス又は窒素ガスとの組み合わせにより、 アツ シングを行うことができる。 更に、 補助ガスとしてオゾンを fflいることにより、 アツシングの効果を高めることができる。 For example, wettability can be improved by a combination of water or hydrogen peroxide and oxygen gas, or a combination of hydrogen peroxide or ethyl alcohol and nitrogen gas. Further, asshing can be performed by a combination of a hydrogen peroxide solution and an oxygen gas or a nitrogen gas. Furthermore, by using ozone as an auxiliary gas, the effect of assuring can be enhanced.
第 4図の表面処理装置を使用し、 いくつかの処理液 6と補助ガスとを組み合わ せて実験を行ったところ、 以下のような結果が得られた。 Experiments were performed using the surface treatment apparatus shown in Fig. 4 and combining some treatment liquids 6 and auxiliary gases. The following results were obtained.
(実施例 4 ) (Example 4)
処理液 6として純水を、 補助ガスとして酸素ガスをそれぞれ使用し、 それらの 混合ガスを処理室 1に導入した。 被処理物 5として酸化アルミニウムの薄板を加 熱プレート 4上に載置し、 前記混合ガスに曝露して表面処理を行った。 これによ り、 前記酸化アルミニゥム薄板表面の濡れ性を向上させることができた。 Pure water was used as the processing liquid 6, and oxygen gas was used as the auxiliary gas, and the mixed gas was introduced into the processing chamber 1. A thin plate of aluminum oxide was placed on the heating plate 4 as the object to be treated 5 and exposed to the mixed gas to perform a surface treatment. Thereby, the wettability of the aluminum oxide thin plate surface could be improved.
更に処理液 6を過酸化水素水に変えて、 かつ同様に酸素ガスを用いて同様の実 験を行ったところ、 同様に濡れ性を向上させる表面改質を行うことができた。 また、 処理液 6をエチルアルコールに、 かつ補助ガスを窒素ガスに変えて同様 の実験を行った場合にも、 同様に濡れ性を向上させることができた。 Further, when the same experiment was performed by changing the treatment liquid 6 to a hydrogen peroxide solution and using an oxygen gas in the same manner, the surface modification for improving the wettability was similarly performed. Also, when a similar experiment was performed with the treatment liquid 6 changed to ethyl alcohol and the auxiliary gas changed to nitrogen gas, the wettability was similarly improved.
(実施例 5 ) (Example 5)
処理液 6として過酸化水素水を、 補助ガスとして酸素ガスをそれぞれ使用し、 それらの混合ガスを処理室 1に導入した。 被処理物 5として有機物であるレジス トを塗布したシリコン板を加熱プレート 4上に載置し、 表面処理を行った。 その 結果、 前記シリコン板表面からレジストが除去され、 アツシングを行うことがで きた。
第 5図には、 本発明による表面処理装置の第 3実施例の構造が概略的に示され ている。 この表面処理装置は、 処理液 6を入れた容器 7が処理室 1内に加熱プレ —ト 4上に配置され、 かつ外部から選択したガスを補助的に供給するためのガス 導入口 1 6がハウジング 2に直接接続されている点において、 上記笫 1及び第 2 実施例の装置と異なる。 本実施例によれば、 このように構成して処理液 6の蒸気 を処理室 1内で直接発生させることにより、 上記第 1及び第 2実施例のように前 記蒸気が管路 1 0を通過する間に冷却される虞が無いので、 より効率的な表面処 理が可能になる。 Hydrogen peroxide solution was used as the treatment liquid 6, and oxygen gas was used as the auxiliary gas, and a mixed gas thereof was introduced into the treatment chamber 1. A silicon plate coated with a resist, which is an organic substance, was placed on the heating plate 4 as the object 5 to be subjected to surface treatment. As a result, the resist was removed from the surface of the silicon plate, and asshing could be performed. FIG. 5 schematically shows the structure of a third embodiment of the surface treatment apparatus according to the present invention. In this surface treatment apparatus, a container 7 containing a treatment liquid 6 is arranged on a heating plate 4 in a treatment chamber 1 and a gas inlet 16 for supplementarily supplying a gas selected from the outside is provided. It differs from the devices of the first and second embodiments in that it is directly connected to the housing 2. According to the present embodiment, the vapor of the processing liquid 6 is generated directly in the processing chamber 1 with the above configuration, so that the vapor flows through the pipeline 10 as in the first and second embodiments. Since there is no danger of cooling during the passage, more efficient surface treatment is possible.
以上、 本発明について好適な実施例を用いて詳細に説明したが、 本発明は、 処 理液を蒸発させかつその蒸気を加熱した被処理物にさらすことにより、 比較的簡 単な工程及び装置を用いて目的とした表面処理を行うことを要旨とするものであ り、 上記各実施例以外にもそれらに様々な変更 ·変形を加えて実施することがで きる。 Although the present invention has been described in detail with reference to the preferred embodiments, the present invention provides a relatively simple process and apparatus by evaporating a treatment liquid and exposing the vapor to a heated object. The purpose of the present invention is to perform the intended surface treatment by using the method described above. In addition to the above-described embodiments, various changes and modifications can be made thereto.
例えば、 液化しないようにヒータを取り付けたノズルを用いて処理液の蒸気を 噴射することにより、 被処理物の所望の部分を局所的に表面処理することができ る。 また、 第 2又は第 3実施例の表面処理装置に、 加熱プレート 5に代えて第 2 図又は第 3図に示す加熱装置を用いることができる。 For example, by jetting the vapor of the processing liquid using a nozzle equipped with a heater so as not to liquefy, a desired portion of the processing target can be locally surface-treated. Further, the heating apparatus shown in FIG. 2 or FIG. 3 can be used in place of the heating plate 5 in the surface treatment apparatus of the second or third embodiment.
また、 特に被処理物表面に除去すべき有機物が多量に付着している場合には、 2回以上のアツシング工程を行うことが好ましい。 このとき、 最初の方のアツシ ング工程ではアツシングレー卜の高い方法を使用して、 大部分の有機物を短時間 で取り除き、 かつ少なくとも最後のアツシング工程で上述した本発明のいずれか の表面処理方法を採用することにより、 除去しきれなかった有機物残渣を被処理 物表面から完全に取り除くことができる。 これにより、 全体として被処理物表面 を比較的簡単にかつ効率よく完全にァッシングすることが可能になる。 In addition, particularly when a large amount of the organic substance to be removed adheres to the surface of the object to be treated, it is preferable to perform the at least two asshing steps. At this time, most of the organic substances are removed in a short time by using a method with a high association in the first assuring step, and at least the surface treatment method of the present invention described above in the last asssing step is used. By employing this method, the organic residues that could not be completely removed can be completely removed from the surface of the workpiece. As a result, it is possible to relatively and efficiently completely flush the surface of the object to be treated.
また、 本発明による表面処理の過程で処理液を変更することにより、 同じ彼処 理物について異なる表面処理を連続的に行うこともできる。 更に、 第 2図の装置 においてマスクを変更することにより、 同じ被処理物の異なる部分に同じ又は異 なる表面処理を連続的に行うこともできる。
Further, by changing the treatment liquid in the course of the surface treatment according to the present invention, different surface treatments can be successively performed on the same treated material. Further, by changing the mask in the apparatus shown in FIG. 2, the same or different surface treatment can be continuously performed on different portions of the same workpiece.
Claims
1 . 処理液を加熱して蒸気を発生させ、 加熱した被処理物の表而を前記蒸気に曝 露することを特徴とする表面処理方法。 1. A surface treatment method comprising heating a treatment liquid to generate steam, and exposing the surface of the heated object to be exposed to the steam.
2 . 前記被処理物を、 その表面の温度が前記処理液の沸点以上になるように加熱 することを特徴とする請求項 1記載の表面処理方法。 2. The surface treatment method according to claim 1, wherein the object to be treated is heated so that a surface temperature thereof is equal to or higher than a boiling point of the treatment liquid.
3 . 前記被処理物表面を全面的に加熱することを特徴とする請求項 2 載の表面 処理方法。 3. The surface treatment method according to claim 2, wherein the entire surface of the object is heated.
4 . 前記被処理物表面を部分的にのみ加熱することを特徴とする請求 ¾ 2 3己載の 表面処理方法。 4. The surface treatment method according to claim 23, wherein the surface of the object is heated only partially.
5 . 前記処理液の蒸気を含む雰囲気内に前記被処理物を配置することを特徴とす る請求項 1乃至請求項 4のいずれかに記載の表面処理方法。 5. The surface treatment method according to any one of claims 1 to 4, wherein the object is disposed in an atmosphere containing a vapor of the treatment liquid.
6 . 前記処理液が純水、 酸性水又はアルカリ水であり、 前, d被処理物^ の濡れ 性を向上させることを特徴とする請求項 1乃至請求項 5のいずれかに記載の表面 処理方法。 6. The surface treatment according to any one of claims 1 to 5, wherein the treatment liquid is pure water, acidic water or alkaline water, and improves the wettability of the object to be treated ^. Method.
7 . 前記処理液が純水、 酸性水又はアルカリ水であり、 前記被処理物表面をアツ シングすることを特徴とする請求項 1乃至請求項 5 の 、ずれかに記載の表面処理 方法。 7. The surface treatment method according to claim 1, wherein the treatment liquid is pure water, acidic water, or alkaline water, and the surface of the object to be treated is ashesed.
8 . 前記処理液が酸であり、 前記被処理物表面をエッチングすることを特徴とす る請求項 1乃至請求項 5のいずれかに記載の表面処理方法。 8. The surface treatment method according to claim 1, wherein the treatment liquid is an acid, and the surface of the object is etched.
9 . 前記処理液が有機溶剤であり、 前記被処理物表面の濡れ性を向上させること を特徴とする請求項 1乃至請求項 5のいずれかに記載の表面処理方法。 9. The surface treatment method according to claim 1, wherein the treatment liquid is an organic solvent, and the wettability of the surface of the object is improved.
1 0 . 前記処理液が酸化性液であり、 前記被処理物表面をアツシングすることを 特徴とする請求項 1乃至請求項 5のいずれかに記載の表面処理方法。 10. The surface treatment method according to any one of claims 1 to 5, wherein the treatment liquid is an oxidizing liquid, and the surface of the object to be treated is ashed.
1 1 . 前記処理液の蒸気に補助ガスを混合し、 その混合ガスに前記加熱した彼処 理物の表面を曝露することを特徴とする請求項 1乃至請求項 4のいずれかに記載 の表面処理方法。 11. The surface treatment according to any one of claims 1 to 4, wherein an auxiliary gas is mixed with the vapor of the treatment liquid, and the surface of the heated pretreatment is exposed to the mixed gas. Method.
1 2 . 前記処理液が純水、 酸性水又はアルカリ水であり、 かつ前記補助ガスが酸 化性気体であり、 前記被処理物表面の濡れ性を向上させることを特徴とする請求
項 1 1記載の表面処理方法。 12. The treatment liquid is pure water, acidic water or alkaline water, and the auxiliary gas is an oxidizing gas, and improves the wettability of the surface of the object to be treated. Item 11. The surface treatment method according to item 1.
1 3 . 前記処理液が酸化性液であり、 かつ前記補助ガスが酸化性気体であり、 前 記被処理物表面を酸化処理することを特徴とする請求項 1 1記載の表面処现方法 c 13. The surface treatment method c according to claim 11, wherein the treatment liquid is an oxidizing liquid, and the auxiliary gas is an oxidizing gas, and the surface of the object to be treated is oxidized.
1 4 . 前記処理液が酸化性液であり、 かつ前記補助ガスが酸化性気体であり、 前 記被処理物表面の濡れ性を向上させることを特徴とする請求項 1 1記載の表面処 理方法。 14. The surface treatment according to claim 11, wherein the treatment liquid is an oxidizing liquid, and the auxiliary gas is an oxidizing gas, and improves the wettability of the surface of the object to be treated. Method.
1 5 . 前記処理液が有機溶剤であり、 かつ前記補助ガスが非酸化性気体であり、 前記被 理物表面の濡れ性を向上させることを特徴とする猜求頊 1 1記載の表面 処理方法。 15. The surface treatment method according to item 11, wherein the treatment liquid is an organic solvent, and the auxiliary gas is a non-oxidizing gas, and the wettability of the surface of the workpiece is improved. .
1 6 . 前記被処理物の表面をァッシングするために、 2 [π·1以上のァッシング丄程 からなり、 少なくとも最後の前記アツシング工程が請求 ¾1 1記載の方法であるこ とを特徴とする表面処理方法。 16. A surface treatment characterized by comprising 2 [π · 1 or more ashing steps for ashing the surface of the object to be treated, wherein at least the last asshing step is the method according to claim 11. Method.
1 7 . 処理液を加熱して蒸気を発生させる蒸気発^装置と、 被処理物を加熱する 加熱装置とからなり、 加熱した前記被処理物の表面を前記蒸気に曝露させるよう にしたことを特徴とする表面処理装置。 17. A steam generating device that heats the processing liquid to generate steam, and a heating device that heats the object to be processed, wherein the surface of the heated object to be processed is exposed to the steam. Characteristic surface treatment equipment.
1 8 . 前記処理液の蒸気を含む雰囲気を画定するハウジングを更に備え、 前記ハ '内に前記被処理物を配置することを特徴とする諧求項 1 7記載の表面処 18. The surface treatment according to claim 17, further comprising a housing that defines an atmosphere containing the vapor of the treatment liquid, wherein the object is disposed in the chamber.
1 9 . 前記加熱装置が、 前記被処理物を載置する加熱プレートであることを特徴 とする請求項 1 7又は請求項 1 8記載の表面処理装置。 19. The surface treatment device according to claim 17, wherein the heating device is a heating plate on which the object is placed.
2 0 . 前記加熱装置が、 前記被処理物表面に温風を送るための温風送風器である ことを特徴とする請求項 1 7又は請求項 1 8記載の表面処理装置。 20. The surface treatment device according to claim 17, wherein the heating device is a hot air blower for sending warm air to the surface of the workpiece.
2 1 . 前記加熱装置が、 赤外線又は紫外線を照射する装置であることを特徴とす る請求項 1 7又は請求項 1 8記載の表面処理装置。 21. The surface treatment device according to claim 17, wherein the heating device is a device that irradiates infrared rays or ultraviolet rays.
2 2 . 前記被処理物の表面に赤外線又は紫外線を部分的に照射するためのマスク を更に備えることを特徴とする請求項 2 1記載の表面処理装置。 22. The surface treatment apparatus according to claim 21, further comprising a mask for partially irradiating infrared rays or ultraviolet rays to the surface of the workpiece.
2 3 . 前記処理液の蒸気に混合する補助ガスを供給するためのガス供給装置を更 に備えることを特徴とする請求項 1 7乃至請求項 2 2のいずれか記載の表面処理
23. The surface treatment according to any one of claims 17 to 22, further comprising a gas supply device for supplying an auxiliary gas mixed with the vapor of the treatment liquid.
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JP2010118681A (en) * | 1999-08-12 | 2010-05-27 | Aqua Science Kk | Resist film removal apparatus, and resist film removal method |
WO2021078564A1 (en) * | 2019-10-25 | 2021-04-29 | Robert Bosch Gmbh | Method for creating hydrophilic surfaces or surface regions on a substrate |
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JPH05206088A (en) * | 1992-01-29 | 1993-08-13 | Fujikura Ltd | Method of processing semiconductor |
JPH05335293A (en) * | 1992-06-03 | 1993-12-17 | Nippon Steel Corp | Method and apparatus for manufacturing semiconductor device |
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Cited By (17)
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JP2001250773A (en) * | 1999-08-12 | 2001-09-14 | Uct Kk | Resist film removing device and method |
JP2010118681A (en) * | 1999-08-12 | 2010-05-27 | Aqua Science Kk | Resist film removal apparatus, and resist film removal method |
EP1288284A4 (en) * | 2000-06-01 | 2004-11-24 | Asahi Chemical Ind | Cleaning agent, cleaning method and cleaning apparatus |
US8529703B2 (en) | 2000-06-01 | 2013-09-10 | Asahi Kasei Kabushiki Kaisha | Cleaning agent, cleaning method and cleaning apparatus |
KR100892199B1 (en) * | 2000-06-01 | 2009-04-07 | 아사히 가세이 가부시키가이샤 | Cleaning Agent, Cleaning Method and Cleaning Apparatus |
US7531495B2 (en) | 2000-06-01 | 2009-05-12 | Asahi Kasei Kabushiki Kaisha | Cleaning agent, cleaning method and cleaning apparatus |
US7875420B2 (en) | 2003-06-06 | 2011-01-25 | Tokyo Electron Limited | Method for improving surface roughness of processed film of substrate and apparatus for processing substrate |
WO2004109779A1 (en) * | 2003-06-06 | 2004-12-16 | Tokyo Electron Limited | Method for improving surface roughness of processed film of substrate and apparatus for processing substrate |
US8646403B2 (en) | 2003-06-06 | 2014-02-11 | Tokyo Electron Limited | Method for improving surface roughness of processed film of substrate and apparatus for processing substrate |
CN100424822C (en) * | 2003-06-06 | 2008-10-08 | 东京毅力科创株式会社 | Method for improving surface roughness of substrate treated film and substrate treating device |
US7989156B2 (en) | 2004-04-20 | 2011-08-02 | Tokyo Electron Limited | Substrate treatment method and substrate treatment apparatus |
US7819076B2 (en) | 2004-04-20 | 2010-10-26 | Tokyo Electron Limited | Substrate treatment method and substrate treatment apparatus |
WO2005104194A1 (en) * | 2004-04-20 | 2005-11-03 | Tokyo Electron Limited | Substrate processing method and substrate processing apparatus |
JP2007180554A (en) * | 2006-12-25 | 2007-07-12 | Tokyo Electron Ltd | Substrate processing apparatus |
JP2007266636A (en) * | 2007-07-09 | 2007-10-11 | Tokyo Electron Ltd | Substrate treatment device |
WO2021078564A1 (en) * | 2019-10-25 | 2021-04-29 | Robert Bosch Gmbh | Method for creating hydrophilic surfaces or surface regions on a substrate |
CN114555514A (en) * | 2019-10-25 | 2022-05-27 | 罗伯特·博世有限公司 | Method for forming hydrophilic surfaces or surface regions on a support |
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