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WO1999030352A2 - Procede pour la production d'une matrice de transistors a couche mince avec des capacites de memoire - Google Patents

Procede pour la production d'une matrice de transistors a couche mince avec des capacites de memoire Download PDF

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Publication number
WO1999030352A2
WO1999030352A2 PCT/EP1998/007361 EP9807361W WO9930352A2 WO 1999030352 A2 WO1999030352 A2 WO 1999030352A2 EP 9807361 W EP9807361 W EP 9807361W WO 9930352 A2 WO9930352 A2 WO 9930352A2
Authority
WO
WIPO (PCT)
Prior art keywords
matrix
thin
applying
photosensitive
structuring
Prior art date
Application number
PCT/EP1998/007361
Other languages
German (de)
English (en)
Other versions
WO1999030352A3 (fr
Inventor
Joachim Glück
Martin Hueppauff
Original Assignee
Robert Bosch Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch Gmbh filed Critical Robert Bosch Gmbh
Priority to EP98966240A priority Critical patent/EP1038320A2/fr
Priority to JP2000524811A priority patent/JP2001526412A/ja
Priority to KR1020007006284A priority patent/KR20010032940A/ko
Publication of WO1999030352A2 publication Critical patent/WO1999030352A2/fr
Publication of WO1999030352A3 publication Critical patent/WO1999030352A3/fr

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133345—Insulating layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133357—Planarisation layers

Definitions

  • the invention is based on a method for producing a matrix of thin-film transistors with storage capacities, in particular for liquid crystal screens according to the type of the independent claim.
  • the inventive method with the characterizing features of the independent claim has the advantage over the known methods that fewer coating and etching steps and steps for photoresist removal are necessary.
  • photostructurable materials are used for the passivation of the matrix and for the production of the pixel electrodes.
  • one coating step namely a PECVD method for SiN x and one sputtering of ITO
  • etching step namely dry etching of SiN x and wet etching from ITO
  • a photosensitive, transparent and highly insulating polymer can be used for the passivation and an electrically conductive polymer for the production of the pixel electrodes.
  • a mechanical rubbing treatment of the conductive polymer can also be used to orient the liquid crystal, so that the application of an additional orientation layer, for example a polymer, can be completely dispensed with.
  • an additional orientation layer for example a polymer
  • a-Si: H can be used as the semiconductor and SiN x as the gate insulator.
  • Figure 1 shows a cross section through a pixel of a liquid crystal screen in various stages of manufacture.
  • a first metallization layer 11 for example 200 nm MoTa
  • a layer sequence consisting of a gate insulator 12, for example 350 nm SiN x , an intrinsic semiconductor 13, for example 150 nm ia-Si, and a highly doped semiconductor 14, for example 50 nm n + -a-Si, and a cover metallization , for example 200 nm Mo, applied.
  • 1 b shows the structure after etching the cover metal layer 15 and the doped semiconductor layer 14 as a column line, drain / source contacts D, S and as a cover electrode of the storage capacitor C.
  • the semiconductor layer 13 and the gate dielectric 12 are shown in a single plasma etching step for separating the individual thin-film transistors of the pixels and for exposing the connection areas of the gate lines and storage capacitor lines.
  • a photosensitive, transparent and highly insulating polymer 16 was spun onto the structure, exposed, developed and annealed.
  • a so-called Photo-BCB can be used as the polymer.
  • the task of the polymer is to passivate and planarize the structure.
  • the top electrode of the storage capacitor C which here also represents the drain contact of the thin-film transistor, and the connection regions of the column and row lines are decoated again by the polymer in the exposure and development step.
  • a conductive, photosensitive, transparent polymer 17 is then spun on as a pixel electrode.
  • a polymer called Bayer PEDT / PSS can be used for this purpose. Exposing the areas between the pixel electrodes with UV light through a photo mask causes the conductive polymer to be converted into an insulation layer. The insulating regions of the polymer are shown in dotted lines in FIG. 1e). If a photosensitive conductive polymer is used, the areas between the pixel electrodes can also be removed by means of a developer step. The individual pixel electrodes are thus effectively electrically separated from one another. After one step of the polymer PEDT / PSS at approx.
  • the unexposed areas of the pixel electrodes have a sheet-related sheet resistance of 200 - 1000 ⁇ and a transparency of) 70% in the visible area, based on a dry film thickness of 900 nm.
  • the transmission can be increased by reducing the dry layer thickness.
  • the layer 17 can then be rubbed mechanically so that it can bring about an orientation of the liquid crystal. As a result, the application of an additional orientation layer can also be dispensed with.
  • the structuring of the gate dielectric 12 can - as shown - be carried out together with the structuring of the undoped semiconductor 13 or also with the passivation 16 as masking in an additional plasma etching process.

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Liquid Crystal (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)

Abstract

L'invention concerne un procédé pour la production d'une matrice de transistors à couche mince avec des capacités de mémoire, en particulier pour des écrans à cristaux liquides. Dans le procédé selon l'invention, on utilise des matériaux photostructurables pour la passivation de la matrice et pour la production des électrodes de point d'image afin de réduire le nombre d'étapes de processus.
PCT/EP1998/007361 1997-12-10 1998-11-17 Procede pour la production d'une matrice de transistors a couche mince avec des capacites de memoire WO1999030352A2 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP98966240A EP1038320A2 (fr) 1997-12-10 1998-11-17 Procede pour la production d'une matrice de transistors a couche mince avec des capacites de memoire
JP2000524811A JP2001526412A (ja) 1997-12-10 1998-11-17 記憶コンデンサを伴う薄膜トランジスタからなるマトリクスの製法
KR1020007006284A KR20010032940A (ko) 1997-12-10 1998-11-17 스토리지 용량을 가지는 박막 트랜지스터로부터매트릭스의 제조 방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19754784A DE19754784B4 (de) 1997-12-10 1997-12-10 Verfahren zur Herstellung einer Matrix aus Dünnschichttransistoren mit Speicherkapazitäten
DE19754784.2 1997-12-10

Publications (2)

Publication Number Publication Date
WO1999030352A2 true WO1999030352A2 (fr) 1999-06-17
WO1999030352A3 WO1999030352A3 (fr) 1999-12-09

Family

ID=7851371

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP1998/007361 WO1999030352A2 (fr) 1997-12-10 1998-11-17 Procede pour la production d'une matrice de transistors a couche mince avec des capacites de memoire

Country Status (6)

Country Link
EP (1) EP1038320A2 (fr)
JP (1) JP2001526412A (fr)
KR (1) KR20010032940A (fr)
DE (1) DE19754784B4 (fr)
TW (1) TW432707B (fr)
WO (1) WO1999030352A2 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6830814B1 (en) * 1999-07-20 2004-12-14 Robert Bosch Gmbh Layer containing an electroconductive transparent material, method for producing same and uses thereof

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100485625B1 (ko) * 2001-12-20 2005-04-27 엘지.필립스 엘시디 주식회사 액정표시소자 및 그 제조방법
KR101023292B1 (ko) * 2003-10-28 2011-03-18 엘지디스플레이 주식회사 액정표시장치 제조방법
CN103700673B (zh) * 2013-12-24 2017-07-04 京东方科技集团股份有限公司 一种显示装置、阵列基板及其制作方法
US11676855B2 (en) * 2020-02-26 2023-06-13 Taiwan Semiconductor Manufacturing Co., Ltd. Patterning interconnects and other structures by photo-sensitizing method
DE102020130905A1 (de) * 2020-02-26 2021-08-26 Taiwan Semiconductor Manufacturing Co., Ltd. Strukturieren von Interconnects und anderer Aufbauten durch Photosensibilisierungsverfahren

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61292183A (ja) * 1985-05-25 1986-12-22 旭硝子株式会社 エレクトロクロミツク表示素子
DE4310640C1 (de) * 1993-03-31 1994-05-11 Lueder Ernst Verfahren zur Herstellung einer Matrix aus a-Si:H-Dünnschichttransistoren
ATE287929T1 (de) * 1994-05-06 2005-02-15 Bayer Ag Leitfähige beschichtungen hergestellt aus mischungen enthaltend polythiophen und lösemittel
KR970011972A (ko) * 1995-08-11 1997-03-29 쯔지 하루오 투과형 액정 표시 장치 및 그 제조 방법
JPH0990421A (ja) * 1995-09-27 1997-04-04 Sharp Corp 液晶表示装置およびその製造方法
DE69633523T2 (de) * 1995-11-22 2006-02-16 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Naval Research Laboratory Leitende gemusterte polymeroberfläche, verfahren zu ihrer herstellung und diese enthaltende anordnungen

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6830814B1 (en) * 1999-07-20 2004-12-14 Robert Bosch Gmbh Layer containing an electroconductive transparent material, method for producing same and uses thereof

Also Published As

Publication number Publication date
JP2001526412A (ja) 2001-12-18
EP1038320A2 (fr) 2000-09-27
KR20010032940A (ko) 2001-04-25
DE19754784B4 (de) 2004-02-12
DE19754784A1 (de) 1999-06-24
TW432707B (en) 2001-05-01
WO1999030352A3 (fr) 1999-12-09

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