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WO1999039385A1 - Procede de passivation a l'hydrogene et appareil cathodique creux a multiples chambres - Google Patents

Procede de passivation a l'hydrogene et appareil cathodique creux a multiples chambres Download PDF

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Publication number
WO1999039385A1
WO1999039385A1 PCT/AU1999/000057 AU9900057W WO9939385A1 WO 1999039385 A1 WO1999039385 A1 WO 1999039385A1 AU 9900057 W AU9900057 W AU 9900057W WO 9939385 A1 WO9939385 A1 WO 9939385A1
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WO
WIPO (PCT)
Prior art keywords
cathode
target
plasma
electrodes
source
Prior art date
Application number
PCT/AU1999/000057
Other languages
English (en)
Inventor
Zhengrong Shi
Michael Bazylenko
Original Assignee
Pacific Solar Pty. Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pacific Solar Pty. Limited filed Critical Pacific Solar Pty. Limited
Priority to AU22594/99A priority Critical patent/AU2259499A/en
Publication of WO1999039385A1 publication Critical patent/WO1999039385A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/3003—Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma

Definitions

  • the present invention relates generally to the field of semiconductor device processing and in particular, the invention provides an improved method of hydrogen passivation in semiconductor material.
  • Polycrystalline silicon has attracted a great deal of interest as an active material in photovoltaic devices and large area applications such as thin film transistors (TFT).
  • TFT thin film transistors
  • grain boundary and intra-grain defects in pc-Si must be passivated.
  • Hydrogen passivation has been shown to be an effective method for the reduction of the activity of these defects.
  • Hydrogen introduced into pc-Si is reported to diffuse in the positive charge state (H ⁇ ) and enhance the electrical conductivity ( N.H. Nickel, N.M. Johnson, and J. Walker, Phys. Rev. Lett. 75., 3720 (1995)). The hydrogenation results in a decrease of the defect activity, thereby improving the electrical properties of the materials and devices (T.J.
  • Plasma ion implantation is reported to provide sufficient hydrogenation of pc-Si within a short processing time (J.D. Bernstein, S. Qin and etc., IEEE Trans. Elec. Devices, 43,1876 (1996), N.W. Cheung, Nucl. Instr. Meth. B55, 811 (1991)).
  • the PII process is performed by repetitively applying a large negative voltage pulse to a sample placed in a hydrogen plasma. Hydrogen ions are accelerated by the target potential and implanted into the sample.
  • Ion energies can range from 1-100 KeV with average ion flux densities as high as 10 16 /cm "2 sec "1 .
  • the primary mechanism for the introduction of hydrogen into the device is ion implantation, but additional ion penetration takes place between the pulses. All these tend to enhance dose rates over methods which rely on surface penetration and bulk diffusion.
  • the Kaufman ion source is a typical example of the former approach and has been used for hydrogen passivation of multicrystalline silicon (mc-Si) solar cells (J.E. Johnson, J.I. Hanoka and J.A. Gregory, IEEE Photovoltaic Specialist Conference, 1112 (1985)).
  • the latter approach separates the plasma source from the pc-Si sample surface and thus hydrogen passivation process relies on diffusion of H ⁇ from the plasma into the sample (M. Spiegel, P. Fath and etc., 13th European Photovoltaic Solar Energy Conference, P.421 (1995)).
  • the H + ion flux is not particularly high as many H + ions recombine in the journey from the plasma source to the sample surface.
  • the present invention provides a method of hydrogen passivation of a target of semiconductor material including: a) locating the target of semiconductor material to be passivated adjacent to a cathode electrode of a hollow cathode reactor having two opposed, radio frequency powered cathode electrodes enclosed in, and isolated from, a grounded chamber; b) introducing a source of ions of a species suitable for passivation of the semiconductor material into the reactor; c) applying rf energy to the reactor to create a plasma between the cathodes of the reactor characterised in that the reactor is operated to create conditions in which the ion density in the plasma species suitable for passivation is greater than 10 11 /cm and the ion implantation energy is less than 80eV.
  • the hollow cathode glow discharge method of the present invention has primarily been developed for hydrogen passivation of silicon material, it can also be used to generate a high density plasma of deuterium or nitrogen for the passivation of pc-Si material.
  • a small proportion of Nitrogen in the range of 0-10% but typically, 4-6%) is beneficial in allowing processing to occur at higher discharge confinements without extinguishing the discharge as readily.
  • the hollow cathode technique can also be used to passivate defects in other polycrystalline semiconductor materials other than pc-Si such as Ge and GaAs. Two substrates can be simultaneously passivated in a single chamber, the method utilising the discharge maintained between the two cathode electrodes with one substrate placed on the internal side of each of the electrodes.
  • all surfaces of the electrodes, except the two surfaces where the substrates are placed, are enclosed by grounded metal parts, some of which may be chamber walls, with a gap between them sufficiently small to prevent discharge formation at the process pressures.
  • the ratio of the internal surface area of the electrodes and the internal open surface area of the chamber is more than 1.
  • discharge characteristics and the related hydrogenation process and device characteristics are controlled by confining the discharge with additional metal parts connected either to the electrodes or to the chamber in a way that preserves the symmetry of the system with respect to each of the substrates.
  • the confining parts connected to the electrodes are preferably shielded from the grounded chamber by grounded parts that are conforming in shape to the surfaces of the conforming parts.
  • the ion bombardment energy on the substrate surface is further controlled by spacing the back surfaces of each of the targets from its corresponding electrode.
  • the gaps described between the targets and respective electrodes are optionally filled with dielectric material.
  • the two electrodes are fixed to a grounded metal frame, but electrically isolated from it, thus forming a portable process vessel which can be loaded into the chamber for the hydrogenation process and then unloaded from it.
  • the chamber is operated at a pressure of 5-10 Pa and with a bias voltage of 80-100 V.
  • the present invention consists in a reaction apparatus including a plurality of reaction stages located within a single vacuum enclosure, the vacuum enclosure containing a support structure arranged to receive the plurality of reaction stages, each reaction stage including two opposed radio frequency cathode electrodes defining a hollow cathode reaction cavity in which are located target mounting means adjacent to each electrode, the apparatus including rf power supply connection means for connecting a source of rf power between the cathode electrodes of each stage and an anode electrode defined by the enclosure and an ion source supply means for supplying ion source material to each hollow cathode reaction stage.
  • the reaction stages are removably located in receiving guides provided in the support structure and are connected to the rf supply connection means when they are located in the guide means.
  • the ion source supply means is a gas delivery system arranged to supply a source gas to the cavity between each pair of cathode electrodes.
  • the surfaces of the cathode electrodes other than those adjacent to the target are enclosed in metal parts connected to the anode of the enclosure, and spaced sufficiently closely to the cathode electrodes to prevent discharge between the cathode and the metal parts.
  • the anode of the enclosure is grounded and includes the enclosure walls.
  • heaters are located behind each cathode electrode to control reaction temperature, however, in alternate embodiments reaction temperatures are controlled by controlling the temperature of the supply of ion source gas.
  • the target mounting means is arranged to mount the target substrate with a gap between it and the underlying cathode.
  • Figure 1 is a schematic diagram of a prior art parallel plate reactor.
  • Figure 2 is a schematic diagram of a hollow cathode reactor.
  • Figure 3 illustrates an optimised Hollow Cathode reactor design, with a cathode electrode diameter of 14 cm and an electrode spacing 3 cm;
  • Figure 4 illustrates the reactor design of figure 3 with the target materials spaced from its corresponding electrode;
  • Figure 5 is a simplified perspective view of a hollow cathode Hydrogen passivation system according to an embodiment of the invention providing a plurality of hollow cathode reaction chambers;
  • Figure 6 is a cutaway diagram of a module from the hollow cathode reactor of Figure 5 ; Detailed description of the embodiments of the invention
  • the hollow cathode is an enhanced-discharge configuration which permits a high intensity, low voltage discharge to be obtained at low pressure (CM. Horwitz, Appl. Phys. Lett. 43., 977 (1983)). In this, it has benefits similar to other configurations such as magnetron and microwave ECR in providing enhanced operation in comparison with the standard rf diode plasma configuration illustrated in Figure 1. Hollow cathode can also yield a very high power efficiency, and its symmetric construction can minimise high energy electron bombardment of the substrate surface as well as minimising particulate contamination.
  • a negative self-developed bias voltage on the two opposing rf powered electrodes helps to increase the density of the high energy electrons (responsible for ionisation) and to reduce their recombination rate.
  • the hollow cathode effect can be further enhanced by an appropriate discharge confinement which results in an increase in the plasma density, an increase in the ion flux on the electrodes and a decrease in the average ion energy (for the same input power).
  • guard rings 27 and shields 28. 29 surrounding the cathodes 20, 21 and extending over those surfaces of the cathodes 20, 21 which are not adjacent to the target substrates.
  • the gaps between the confinement elements 27, 28 and 29 and the cathodes 20, 21 must be kept sufficiently small that a discharge cannot form in these gaps at the process pressures in use. All these characteristics satisfy the criteria for an effective hydrogen passivation method i.e. high H + ion flux (short processing time), minimum surface damage due to H + ion bombardment and better improvement on device performance.
  • Hydrogen passivation of pc-Si solar cells was conducted in a confined hollow cathode glow discharge system as shown in Fig. 3.
  • the system consists of two electrodes with dimension of 14 cm in diameter and a spacing of 3 cm.
  • the gap between the two confinement elements is 4 mm.
  • Hydrogenation is typically undertaken at a pressure of 5-8 Pa and power of 500W (1.66W/cm 2 ).
  • the bias voltage between the plasma and the anode at this condition is only 80V, one order of magnitude lower than that produced in other types of plasma systems.
  • the density of H + ions produced under this condition is above 10 /cm 3 .
  • the optimum passivation time during this experiment was around 30 to 45 minutes for films of 2—3 ⁇ m thickness but depends on film thickness.
  • the important limitation relating to conventional hydrogen passivation is the surface damage resulting from hydrogen bombardment. This damage causes an increase in the surface recombination, thus lowering the ultimate performance of the device.
  • a high concentration of hydrogen radicals should be created at a minimum acceleration energy.
  • a high input power is necessary to achieve a high concentration of hydrogen ions, which generates a very high self-developed negative bias voltage on the sample (up to 1000 V). This leads to a high energy ion bombardment and thus a resultant surface damage.
  • the Kaufman ion source also requires a relatively high acceleration voltage to generate the same concentration of atomic hydrogen as used in our experiments, although the situation is improved compared with the standard rf diode plasma configuration.
  • the surface damage due to hollow cathode hydrogenation can be further reduced by placing the samples 2 to 3 mm away from the cathode electrodes but still within the dark space of plasma (as illustrated in Figure 4). This arrangement reduces the acceleration energy of hydrogen ions impinging on the pc-Si surface and thus reduced the surface damage.
  • a high plasma density hollow cathode glow discharge system operates at an order of magnitude lower bias voltage than the conventional rf glow discharge system and the Kaufman ion source, thus reducing the surface damage to a negligible level.
  • the surface damage can be characterised by electron beam induced current (EBIC) images taken at low electron beam energy in a scanning electron microscopy. The EBIC analysis indicates that the surface damage introduced by the hollow cathode glow discharge is negligible.
  • EBIC electron beam induced current
  • FIG. 5 shows a schematic of a multichamber hollow cathode system in which a series of hollow cathode stages 34 are connected, with the unit stage frame commonly grounded. Adjacent stages 34 may be attached permanently and in which case they may share a common chamber wall.
  • Figure 6 shows the detail of a single hollow cathode stage 34 including the chamber 40, plasma confinement element 45, gas delivery tubes 46, cathode electrodes 41, 42 and glass substrate targets 43, 44, being coated with a layer of pc-Si.
  • the chamber frame 40 is grounded with two rf electrodes 41, 42 separately placed on either side of the reactor.
  • Two targets 43, 44 are placed facing each other and with each adjacent to an rf cathode electrode.
  • Two gas delivery tubes 46 are positioned within the gaps 47 in the plasma confinement elements 45.
  • the gas can be introduced in the gap behind each of the cathode electrodes 41,42 through a set of holes in the grounded wall of the chamber 40 of the hollow cathode stage and will then enter the hollow cathode discharge zone through the gaps between confining elements 45.
  • the hollow cathode system multichamber system has the advantages of achieving higher values of the utilisation factor and the high throughput.
  • the preferred embodiment of the hollow cathode hydrogen passivation system has the following features which give advantages over conventional rf diode system for hydrogen passivation.
  • Semiconductor films can be passivated simultaneously on two metal or dielectric substrates 25, 26, 43, 44 from a radio frequency glow discharge 32 maintained in a mixture of gases or vapours with at least one of them containing hydrogen in its molecule.
  • the discharge 32 is maintained between two mutually symmetric, radio frequency powered electrodes 20, 21, 41, 42 enclosed in an isolated grounded chamber 22, 40, with one target placed on the internal side of each of the cathode electrodes 20, 21, 41, 42.
  • All surfaces of the cathode electrodes 20, 21, 41, 42 except the two surfaces where the targets 25, 26, 43, 44 are placed, are enclosed in grounded metal parts 27, 28, 29, 45, some of which may be chamber walls, with a gap between the cathodes 20, 21, 41, 42 and adjacent metal parts 27, 28, 29, 45 being sufficiently small to prevent discharge formation at the process pressures.
  • the target temperature during the deposition can be controlled by grounded heaters located behind the electrodes and conforming in shape to the back surface of the heaters.
  • the heating of each chamber can be realised by flowing a hot gas through the chamber.
  • Discharge characteristics and related deposition process and film characteristics can be controlled by confining the discharge by metal parts connected either to the electrodes or to the chamber in a way that preserves the symmetry of the system with respect to each of the targets.
  • the confining parts connected to the electrodes can be shielded from the grounded chamber by grounded parts that are shaped to conform with the electrode back surfaces.
  • the ion bombardment energy on the substrate surface and related film characteristics can be controlled by introducing and varying equal gaps between the back surfaces of each of the targets and the cathode electrodes.
  • These gaps can be defined by dielectric material.
  • the two electrodes can be fixed on a grounded metal frame, but isolated from it, thus forming a portable process vessel which can be loaded in the chamber for the passivation treatment and then unloaded from it.
  • Hydrogen gas (H 2 ) is believed to be the most suitable source of H + ions).
  • the hydrogen can be diluted with noble gases and small amounts of nitrogen.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

Un réacteur cathodique creux (22) comporte deux cathodes RF opposées (20, 21) avec des anneaux de garde (27) et des blindages (28, 29). Un plasma à décharge luminescente (32) dans le réacteur (22) hydrogène le matériau semi-conducteur (25, 26) placé de manière adjacente à au moins une cathode (20, 21). Le plasma (32) présente une densité ionique supérieure à 1011/cm3 et génère des énergies d'implantation ioniques inférieures à 80eV, ce qui donne des taux de traitement relativement élevés avec un faible endommagement des surfaces. Les caractéristiques de passivation peuvent être contrôlées en faisant varier les espaces entre le matériau semi-conducteur (25, 26) et les cathodes correspondantes (20, 21). Le réacteur (22) peut être échelonné pour recevoir des substrats à large surface tels que les piles solaires de silicium polycristallines. Une pluralité de n réacteurs (22) peut être fixée de manière amovible dans une enceinte commune sous vide, pour assurer la passivation simultanée de plusieurs substrats, à savoir, jusqu'à 2n substrats (25, 26).
PCT/AU1999/000057 1998-01-30 1999-01-28 Procede de passivation a l'hydrogene et appareil cathodique creux a multiples chambres WO1999039385A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU22594/99A AU2259499A (en) 1998-01-30 1999-01-28 Method for hydrogen passivation and multichamber hollow cathode apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
AUPP1566 1998-01-30
AUPP1566A AUPP156698A0 (en) 1998-01-30 1998-01-30 New method for hydrogen passivation

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WO1999039385A1 true WO1999039385A1 (fr) 1999-08-05

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Cited By (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002056338A3 (fr) * 2001-01-16 2003-04-17 Forsch Applikationslabor Plasm Dispositif de traitement assiste par plasma de surfaces de substrats plans
US7179678B1 (en) 2004-08-26 2007-02-20 Hewlett-Packard Development Company, L.P. EBIC response enhancement in type III-VI semiconductor material on silicon
WO2009070588A1 (fr) * 2007-11-30 2009-06-04 Still River Systems Incorporated Source de particules interrompue
US8907311B2 (en) 2005-11-18 2014-12-09 Mevion Medical Systems, Inc. Charged particle radiation therapy
US8927950B2 (en) 2012-09-28 2015-01-06 Mevion Medical Systems, Inc. Focusing a particle beam
US8933650B2 (en) 2007-11-30 2015-01-13 Mevion Medical Systems, Inc. Matching a resonant frequency of a resonant cavity to a frequency of an input voltage
US8941083B2 (en) 2007-10-11 2015-01-27 Mevion Medical Systems, Inc. Applying a particle beam to a patient
US8952634B2 (en) 2004-07-21 2015-02-10 Mevion Medical Systems, Inc. Programmable radio frequency waveform generator for a synchrocyclotron
US9155186B2 (en) 2012-09-28 2015-10-06 Mevion Medical Systems, Inc. Focusing a particle beam using magnetic field flutter
US9185789B2 (en) 2012-09-28 2015-11-10 Mevion Medical Systems, Inc. Magnetic shims to alter magnetic fields
US9301384B2 (en) 2012-09-28 2016-03-29 Mevion Medical Systems, Inc. Adjusting energy of a particle beam
US9545528B2 (en) 2012-09-28 2017-01-17 Mevion Medical Systems, Inc. Controlling particle therapy
US9622335B2 (en) 2012-09-28 2017-04-11 Mevion Medical Systems, Inc. Magnetic field regenerator
US9661736B2 (en) 2014-02-20 2017-05-23 Mevion Medical Systems, Inc. Scanning system for a particle therapy system
US9681531B2 (en) 2012-09-28 2017-06-13 Mevion Medical Systems, Inc. Control system for a particle accelerator
US9723705B2 (en) 2012-09-28 2017-08-01 Mevion Medical Systems, Inc. Controlling intensity of a particle beam
US9730308B2 (en) 2013-06-12 2017-08-08 Mevion Medical Systems, Inc. Particle accelerator that produces charged particles having variable energies
US9950194B2 (en) 2014-09-09 2018-04-24 Mevion Medical Systems, Inc. Patient positioning system
US9962560B2 (en) 2013-12-20 2018-05-08 Mevion Medical Systems, Inc. Collimator and energy degrader
US10254739B2 (en) 2012-09-28 2019-04-09 Mevion Medical Systems, Inc. Coil positioning system
US10258810B2 (en) 2013-09-27 2019-04-16 Mevion Medical Systems, Inc. Particle beam scanning
US10646728B2 (en) 2015-11-10 2020-05-12 Mevion Medical Systems, Inc. Adaptive aperture
US10653892B2 (en) 2017-06-30 2020-05-19 Mevion Medical Systems, Inc. Configurable collimator controlled using linear motors
US10675487B2 (en) 2013-12-20 2020-06-09 Mevion Medical Systems, Inc. Energy degrader enabling high-speed energy switching
US10925147B2 (en) 2016-07-08 2021-02-16 Mevion Medical Systems, Inc. Treatment planning
US11103730B2 (en) 2017-02-23 2021-08-31 Mevion Medical Systems, Inc. Automated treatment in particle therapy
US11291861B2 (en) 2019-03-08 2022-04-05 Mevion Medical Systems, Inc. Delivery of radiation by column and generating a treatment plan therefor

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USRE48047E1 (en) 2004-07-21 2020-06-09 Mevion Medical Systems, Inc. Programmable radio frequency waveform generator for a synchrocyclotron
US8952634B2 (en) 2004-07-21 2015-02-10 Mevion Medical Systems, Inc. Programmable radio frequency waveform generator for a synchrocyclotron
US7179678B1 (en) 2004-08-26 2007-02-20 Hewlett-Packard Development Company, L.P. EBIC response enhancement in type III-VI semiconductor material on silicon
US8907311B2 (en) 2005-11-18 2014-12-09 Mevion Medical Systems, Inc. Charged particle radiation therapy
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US8941083B2 (en) 2007-10-11 2015-01-27 Mevion Medical Systems, Inc. Applying a particle beam to a patient
US8933650B2 (en) 2007-11-30 2015-01-13 Mevion Medical Systems, Inc. Matching a resonant frequency of a resonant cavity to a frequency of an input voltage
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USRE48317E1 (en) 2007-11-30 2020-11-17 Mevion Medical Systems, Inc. Interrupted particle source
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US10155124B2 (en) 2012-09-28 2018-12-18 Mevion Medical Systems, Inc. Controlling particle therapy
US10368429B2 (en) 2012-09-28 2019-07-30 Mevion Medical Systems, Inc. Magnetic field regenerator
US9681531B2 (en) 2012-09-28 2017-06-13 Mevion Medical Systems, Inc. Control system for a particle accelerator
US9706636B2 (en) 2012-09-28 2017-07-11 Mevion Medical Systems, Inc. Adjusting energy of a particle beam
US9723705B2 (en) 2012-09-28 2017-08-01 Mevion Medical Systems, Inc. Controlling intensity of a particle beam
US9622335B2 (en) 2012-09-28 2017-04-11 Mevion Medical Systems, Inc. Magnetic field regenerator
US9155186B2 (en) 2012-09-28 2015-10-06 Mevion Medical Systems, Inc. Focusing a particle beam using magnetic field flutter
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US8927950B2 (en) 2012-09-28 2015-01-06 Mevion Medical Systems, Inc. Focusing a particle beam
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US10675487B2 (en) 2013-12-20 2020-06-09 Mevion Medical Systems, Inc. Energy degrader enabling high-speed energy switching
US9962560B2 (en) 2013-12-20 2018-05-08 Mevion Medical Systems, Inc. Collimator and energy degrader
US10434331B2 (en) 2014-02-20 2019-10-08 Mevion Medical Systems, Inc. Scanning system
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US11213697B2 (en) 2015-11-10 2022-01-04 Mevion Medical Systems, Inc. Adaptive aperture
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US11103730B2 (en) 2017-02-23 2021-08-31 Mevion Medical Systems, Inc. Automated treatment in particle therapy
US10653892B2 (en) 2017-06-30 2020-05-19 Mevion Medical Systems, Inc. Configurable collimator controlled using linear motors
US11291861B2 (en) 2019-03-08 2022-04-05 Mevion Medical Systems, Inc. Delivery of radiation by column and generating a treatment plan therefor
US11311746B2 (en) 2019-03-08 2022-04-26 Mevion Medical Systems, Inc. Collimator and energy degrader for a particle therapy system
US11717703B2 (en) 2019-03-08 2023-08-08 Mevion Medical Systems, Inc. Delivery of radiation by column and generating a treatment plan therefor
US12161885B2 (en) 2019-03-08 2024-12-10 Mevion Medical Systems, Inc. Delivery of radiation by column and generating a treatment plan therefor
US12168147B2 (en) 2019-03-08 2024-12-17 Mevion Medical Systems, Inc. Collimator and energy degrader for a particle therapy system

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