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WO2002007198A2 - Depot de films de tantale de faible contrainte - Google Patents

Depot de films de tantale de faible contrainte Download PDF

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Publication number
WO2002007198A2
WO2002007198A2 PCT/US2001/022062 US0122062W WO0207198A2 WO 2002007198 A2 WO2002007198 A2 WO 2002007198A2 US 0122062 W US0122062 W US 0122062W WO 0207198 A2 WO0207198 A2 WO 0207198A2
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
tantalum
temperature
deposition
films
Prior art date
Application number
PCT/US2001/022062
Other languages
English (en)
Other versions
WO2002007198A3 (fr
Inventor
Arvind Sundarrajan
Tony P. Chiang
Tse-Yong Yao
Peijun Ding
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Publication of WO2002007198A2 publication Critical patent/WO2002007198A2/fr
Publication of WO2002007198A3 publication Critical patent/WO2002007198A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation

Definitions

  • This invention relates to the deposition of low stress tantalum films. More particularly, this invention relates to the deposition of tantalum films at low temperatures.
  • barrier or liner layer is made of titanium, titanium nitride, a combination thereof, or tantalum and/or tantalum nitride, and titanium and tantalum compounds containing various amounts of oxygen. Tantalum-containing layers have been found to be better than titanium as barrier layers for copper.
  • Deposition of metals onto patterned substrates has generally been done by sputtering.
  • a target sputters in all directions, it is difficult to uniformly fill a high aspect ratio opening in a substrate because little of the sputtered material is deposited from a vertical direction. Thus much of the sputtered material is deposited outside of the opening, and gradually covers over the opening without filling it.
  • Several methods have been tried to improve the directionality of sputtering, such as the use of a coilimator, or by biasing the substrate.
  • openings having an aspect ratio higher than about 1:1 cannot be filled properly even using such methods.
  • IMP chamber ionized metal plasma
  • the IMP chamber 170 includes a conventional target 172, as of tantalum, mounted on a top wall 173 of the chamber 170. A pair of opposing magnets 176, 178 are mounted over the top of the target 172. A substrate support 174, bearing a substrate 175 thereon, is mounted opposite to the target 172. A source of power 180 is connected to the target 172 and a source of RF power 182 is connected to the substrate support 174. A controller 200 regulates gas flows.
  • a helical coil 186 which can have one or more turns, preferably made from the same material as the target 172, is mounted between the target 172 and the substrate support 174, and is also connected to a source of RF power 188.
  • Gases such as argon and nitrogen in vessels 192, 194, are metered to the chamber 170 by means of gas flow valves 196, 198 respectively.
  • the pressure in the chamber is maintained by a cryogenic pump 190 through inlet 191 via a three-position gate valve 193.
  • the internal inductively coupled coil 186 provides a high density plasma in the region between the target 172 and the support electrode 174. If the pressure is too low, too few particles are present and sufficient metal ionization will not occur in the region of the powered coil.
  • the gate valve 193 is used to regulate the pumping speed and in turn regulate the pressure in the chamber 170 to the desired range, generally about 10-100 millitorr.
  • the substrate temperature is high during deposition and the resultant tantalum films are highly compressively stressed; i.e., the films have a compressive stress as high as -2.4xlO "10 dynes/cm 2 (-2400 mPa). This is so high that the films can buckle and crack after deposition, resulting in delamination from the substrate, whereupon films such as copper, overlying the Ta layer, also delaminate.
  • low stress tantalum films can be sputter deposited at low temperatures, within the range of from about 200-350°C, by carefully controlling the substrate temperature during deposition. This can be done by clamping the substrate to a temperature controllable substrate support, or providing a temperature controllable E- chuck support for the substrate during deposition of a tantalum film.
  • Fig. 1 is a cross sectional view of an ionized metal plasma chamber.
  • Fig. 2 is a graph of film stress in dynes/cm.2 versus the temperature of deposition.
  • Fig. 3 is a cross sectional view of a temperature controllable substrate support having clamping means maintain contact between the substrate and the substrate support.
  • Fig. 4 is a cross sectional view of a temperature controllable substrate support having chuck means to maintain close contact between a substrate and its support.
  • Tantalum is known to exist in several forms; beta-tantalum and BCC tantalum, depending on the temperature of deposition.
  • Fig. 2 which is a graph of film, stress in dynes/cm 2 versus deposition temperature, it can be seen that at film temperatures between about 200 and 350°C, beta-tantalum films are deposited and the films change to the BCC form at temperatures above that.
  • beta- tantalum films must be deposited at temperatures between about 200-350°C.
  • the temperature of the sputtered film must be controlled during deposition.
  • a substrate support 174 can be water cooled using a pipe 197 to circulate water through the substrate support 174.
  • Clamping means 195 is used to press the substrate 175 against the substrate support 174.
  • a flow of an inert gas such as argon
  • argon can be passed to the backside of the substrate via a line 199 during deposition, which will also aid in maintaining the desired temperature of the substrate during deposition.
  • an inert gas such as argon
  • the clamping ring 195 lacks contact between the substrate 175 and the substrate support 174 results in a non-uniform temperature of the substrate 175 and a consequent loss of control of the tantalum film quality.
  • the substrate 175 is clamped to the support 174. This can be done using a means of clamping such as a clamp ring 195 overlying the substrate that can press the substrate 175 to the support 174.
  • FIG. 4 Another means of clamping the substrate 175 to the substrate support 174 can be done by biasing the substrate support 174.
  • biasing the substrate support 174 is shown in Fig. 4.
  • the substrate support 174 is biased by means of an RF power supply 182A which is passed to the surface of the support.
  • the surface of the substrate support 174 becomes positively charged.
  • the substrate 175 is electrically attracted to the surface of the support 174, thus maintaining close spacing between the support 174 and the substrate 175,
  • a line 197 circulates cooling water through the substrate support 174, ensuring efficient cooling of the support 174 during deposition.
  • cooling the substrate during tantalum deposition has another advantage in that, when copper is to be deposited over the tantalum-containing film, a seed layer of copper is also deposited at low temperature. Since the seed copper layer should be deposited at as low a temperature as possible, efficient cooling of the substrate and its deposited films is required. By depositing the copper seed layer on an already cooled substrate, the time required to cool the tantalum coated substrate to the desired temperature for seed copper layer deposition is minimized, and throughput is increased. A thicker copper film can then be electroplated onto the substrate.
  • Fig. 2 is a graph of the stress of a tantalum film which has been deposited in a conventional chamber that does not clamp the substrate to the support, the tensile and compressive stress in IMP sputtered tantalum films changes with temperature.
  • beta-tantalum having little compressive stress can be deposited by controlling the substrate temperature while maintaining good contact between the substrate and the temperature controlled substrate support.
  • the resultant tantalum film has low compressive stress and will not delaminate from the substrate. Devices made from low stress tantalum films will therefore be more reliable.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

En vue de déposer des films de couches barrières au cuivre qui renferment du tantale, on dépose lesdites couches barrières dans une chambre de vaporisation de plasma de haute densité. Il est possible de remplir des ouvertures à rapport de forme élevé à l'aide d'une chambre, mais la température du substrat s'élève à des températures qui sollicitent par compression les films barrières. Ainsi, on dépose lesdits films à des températures réduites en fixant le substrat sur un support de substrat à température réglable pendant la formation du dépôt.
PCT/US2001/022062 2000-07-18 2001-07-13 Depot de films de tantale de faible contrainte WO2002007198A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US61836400A 2000-07-18 2000-07-18
US09/618,364 2000-07-18

Publications (2)

Publication Number Publication Date
WO2002007198A2 true WO2002007198A2 (fr) 2002-01-24
WO2002007198A3 WO2002007198A3 (fr) 2002-07-18

Family

ID=24477393

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/022062 WO2002007198A2 (fr) 2000-07-18 2001-07-13 Depot de films de tantale de faible contrainte

Country Status (1)

Country Link
WO (1) WO2002007198A2 (fr)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11509049A (ja) * 1996-04-26 1999-08-03 ソニー株式会社 高アスペクト比を有するコンタクトホールに平坦な配線膜及びプラグを形成する改善された成膜装置及び成膜方法
US6033478A (en) * 1996-11-05 2000-03-07 Applied Materials, Inc. Wafer support with improved temperature control
US6139699A (en) * 1997-05-27 2000-10-31 Applied Materials, Inc. Sputtering methods for depositing stress tunable tantalum and tantalum nitride films
JP3374901B2 (ja) * 1998-02-27 2003-02-10 日本電気株式会社 半導体装置

Also Published As

Publication number Publication date
WO2002007198A3 (fr) 2002-07-18

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