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WO2002007198A3 - Depot de films de tantale de faible contrainte - Google Patents

Depot de films de tantale de faible contrainte Download PDF

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Publication number
WO2002007198A3
WO2002007198A3 PCT/US2001/022062 US0122062W WO0207198A3 WO 2002007198 A3 WO2002007198 A3 WO 2002007198A3 US 0122062 W US0122062 W US 0122062W WO 0207198 A3 WO0207198 A3 WO 0207198A3
Authority
WO
WIPO (PCT)
Prior art keywords
deposition
films
low stress
substrate
deposited
Prior art date
Application number
PCT/US2001/022062
Other languages
English (en)
Other versions
WO2002007198A2 (fr
Inventor
Arvind Sundarrajan
Tony P Chiang
Tse-Yong Yao
Peijun Ding
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of WO2002007198A2 publication Critical patent/WO2002007198A2/fr
Publication of WO2002007198A3 publication Critical patent/WO2002007198A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

En vue de déposer des films de couches barrières au cuivre qui renferment du tantale, on dépose lesdites couches barrières dans une chambre de vaporisation de plasma de haute densité. Il est possible de remplir des ouvertures à rapport de forme élevé à l'aide d'une chambre, mais la température du substrat s'élève à des températures qui sollicitent par compression les films barrières. Ainsi, on dépose lesdits films à des températures réduites en fixant le substrat sur un support de substrat à température réglable pendant la formation du dépôt.
PCT/US2001/022062 2000-07-18 2001-07-13 Depot de films de tantale de faible contrainte WO2002007198A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US61836400A 2000-07-18 2000-07-18
US09/618,364 2000-07-18

Publications (2)

Publication Number Publication Date
WO2002007198A2 WO2002007198A2 (fr) 2002-01-24
WO2002007198A3 true WO2002007198A3 (fr) 2002-07-18

Family

ID=24477393

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/022062 WO2002007198A2 (fr) 2000-07-18 2001-07-13 Depot de films de tantale de faible contrainte

Country Status (1)

Country Link
WO (1) WO2002007198A2 (fr)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997041598A1 (fr) * 1996-04-26 1997-11-06 Sony Corporation Appareil et procede permettant un depot ameliore de couches minces de revetement et de fiches conformes dans des contacts a fort allongement
EP0840360A2 (fr) * 1996-11-05 1998-05-06 Applied Materials, Inc. Support d'une plaquette avec contrÔle amélioré de la température
WO1998054377A2 (fr) * 1997-05-27 1998-12-03 Applied Materials, Inc. Films de nitrure de tantale et de tantale a contrainte ajustable
EP0939437A2 (fr) * 1998-02-27 1999-09-01 Nec Corporation Planarisation des couches d'interconnexion

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997041598A1 (fr) * 1996-04-26 1997-11-06 Sony Corporation Appareil et procede permettant un depot ameliore de couches minces de revetement et de fiches conformes dans des contacts a fort allongement
EP0840360A2 (fr) * 1996-11-05 1998-05-06 Applied Materials, Inc. Support d'une plaquette avec contrÔle amélioré de la température
WO1998054377A2 (fr) * 1997-05-27 1998-12-03 Applied Materials, Inc. Films de nitrure de tantale et de tantale a contrainte ajustable
EP0939437A2 (fr) * 1998-02-27 1999-09-01 Nec Corporation Planarisation des couches d'interconnexion

Also Published As

Publication number Publication date
WO2002007198A2 (fr) 2002-01-24

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