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WO2003008140A2 - Appareil de traitement de pièce à travailler - Google Patents

Appareil de traitement de pièce à travailler Download PDF

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Publication number
WO2003008140A2
WO2003008140A2 PCT/US2002/023297 US0223297W WO03008140A2 WO 2003008140 A2 WO2003008140 A2 WO 2003008140A2 US 0223297 W US0223297 W US 0223297W WO 03008140 A2 WO03008140 A2 WO 03008140A2
Authority
WO
WIPO (PCT)
Prior art keywords
rotor
workpiece
head
liquid
processing
Prior art date
Application number
PCT/US2002/023297
Other languages
English (en)
Other versions
WO2003008140A3 (fr
Inventor
Steven L. Peace
Paul Z. Wirth
Erik Lund
Original Assignee
Semitool, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/907,552 external-priority patent/US6492284B2/en
Priority claimed from US09/907,522 external-priority patent/US6680253B2/en
Application filed by Semitool, Inc. filed Critical Semitool, Inc.
Priority to AU2002322587A priority Critical patent/AU2002322587A1/en
Publication of WO2003008140A2 publication Critical patent/WO2003008140A2/fr
Publication of WO2003008140A3 publication Critical patent/WO2003008140A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft

Definitions

  • the invention relates to surface preparation, cleaning, rinsing and drying of workpieces, such as semiconductor wafers, flat panel displays, rigid disk or optical media, thin film heads, or other workpieces formed from a substrate on which microelectronic circuits, data storage elements or layers, or micro-mechanical elements may be formed.
  • workpieces such as semiconductor wafers, flat panel displays, rigid disk or optical media, thin film heads, or other workpieces formed from a substrate on which microelectronic circuits, data storage elements or layers, or micro-mechanical elements may be formed.
  • the semiconductor manufacturing industry is constantly seeking to improve the processes used to manufacture microelectronic circuits and components, such as the manufacture of integrated circuits from wafers.
  • the objectives of many of these improved processes are decreasing the amount of time required to process a wafer to form the desired integrated circuits; increasing the yield of usable integrated circuits per wafer by, for example, decreasing contamination of the wafer during processing; reducing the number of steps required to create the desired integrated circuits; and reducing the costs of manufacture.
  • a fluid in either liquid, vapor or gaseous form.
  • Such fluids are used to, for example, etch the wafer surface, clean the wafer surface, dry the wafer surface, passivate the wafer surface, deposit films on the wafer surface, etc. Controlling how the processing fluids are applied to the wafer surfaces, is often important to the success of the processing operations.
  • the microelectronic circuits now used in virtually all electronic products are manufactured from flat round disks or wafers made of a semiconductor material, such as silicon.
  • the side or suface of the wafer having the microelectronic circuits is called the device side.
  • the other side is often referred to as the back or bottom side of the wafer.
  • special machines or robots and techniques are used in moving, handling and storing wafers, to maintain the wafers in an ultra-clean environment. With these techniques, the wafers are uniformly delivered to each process machine in a device side up orientation. This works well for the majority of process steps. However, for some process steps, receiving the wafer in a device side down orientation would be desirable.
  • the device side is to be processed with a liquid
  • having the device side down helps to remove the liquid via gravity, a feature not available with device side up processing.
  • flipping the wafer over from a device side up to a device side down orientation may conceptually be a simple event, in practice it presents substantial engineering challenges. Initially, the wafer typically can only be picked up at the edges, and no other part of the wafer may be touched (to reduce contamination). In addition, the wafer must of course be securely gripped or held before it is flipped over.
  • the flipping over or inverting step must be performed in a small amount of space, since space is scarce and costly in the clean room areas of fabrication facilities. Moreover, the flipping step must be performed quickly, to avoid slowing manufacturing operations, and with a minimum of movements or transfers of the workpiece.
  • the machine includes a workpiece housing having a processing chamber. Processing fluids are distributed across the surface of the workpiece in the processing chamber, by centrifugal force.
  • the machine has a head having a first rotor and a second rotor engageable with the first rotor to hold a workpiece between them.
  • the second rotor preferably has an open central area, to expose a bottom surface of the workpiece.
  • the exposed bottom surface of the workpiece is contacted with a liquid via fixed or moving spray nozzles or liquid applicators, or by contact with a bath of liquid.
  • the first and second rotors each have a chamber access opening.
  • the first and second rotors are moveable relative to each other to at least partially align the openings, for loading and unloading a workpiece.
  • the first and second rotors are also moveable relative to each other, so that the access openings are not aligned during processing of the workpiece.
  • the head includes at least one actuator for moving at least one of the rotors in a direction parallel to the spin axis of the rotors. This design allows workpieces to be more quickly and easily loaded into and unloaded from the machine.
  • the head is attached to a support arm on a head lifter, for vertically moving the head towards and away from a base having a liquid source for applying liquid to a bottom surface of the workpiece.
  • the liquid source may be a bowl containing the liquid, optionally including a sonic energy source, such as a mega sonic transducer.
  • a method for processing a workpiece in a method for processing a workpiece, the workpiece is moved horizontally into a process head.
  • the head and workpiece are inverted and lowered down towards a liquid source which provides a liquid onto the bottom surface of the workpiece.
  • Liquid is applied to the bottom surface of the workpiece, by direct contact with a bath of liquid, or via a liquid outlet, by spraying, or by immersion. workpiece.
  • a same, or a different liquid, or a gas or vapor, is optionally introduced to the top surface of the workpiece.
  • This method provides a variety of process steps, with less process chemical and water consumption. It also requires less need for movement of the workpiece, reducing manufacturing time and space requirements.
  • a machine in a fifth aspect includes a workpiece housing having a processing chamber. Processing fluids are distributed across the surface of the workpiece in the processing chamber, by centrifugal force.
  • a process head holds a workpiece with the bottom of the workpiece uncovered or open.
  • a base has a bowl for containing a liquid.
  • a sonic energy source such as a megasonic transducer, is associated with the bowl. The head moves to place the workpiece into contact with the liquid in the bowl. Sonic energy from the sonic energy source moves through the liquid to the workpiece, improving workpiece processing.
  • the process head optionally rotates the workpiece while it is in contact with the liquid. '
  • sonic energy in these aspects expedites processing and provides more efficient processing.
  • sonic energy with reactors such as described in International Patent Application No. WO 99/46064, which are currently in use is generally counter-intuitive, due to the often closed configuration; spinning rotors; and/or lack of a continuous liquid volume around the workpiece, in these reactors. It has now been discovered, however, that sonic energy can indeed be used in these types of reactors, providing improved processing.
  • Figure 1 is a cut-away perspective view of a reactor or machine for processing a workpiece.
  • Figure 2 is a section view of the reactor shown in Figure 1.
  • FIG. 3 is an enlarged detail of certain elements of the reactor of Figure 1.
  • Figure 4 is a bottom perspective view of the lower processing chamber shown in Figure 2.
  • Figures 5 and 6 are further enlarged details of features shown in Figure 3.
  • Figure 7 is an enlarged, perspective view of the upper rotor, as shown in the reactor of Figures 1 and 2.
  • Figure 8 is an enlarged, perspective view of a lower rotor, as shown in the reactor of Figures 1 and 2.
  • Figure 9 is a section view of an alternative workpiece processing system shown in a head up position.
  • Figure 10 is a section view of the system shown in Figure 9, in a head down position.
  • Figure 11 is a partial perspective view of the process head shown in Figure 9.
  • Figure 12 is an enlarged section view of the process head shown in Figures 9-11, with the process head in the head up and the lower or outer rotor in an extended position, for loading and unloading a workpiece.
  • Figure 13 is a section view thereof with the process head shown in the head up and the lower or outer rotor in a retracted position.
  • Figure 14 is an alternative section view thereof.
  • Figure 15 is a schematic plan view of an apparatus having a semi-circular array of the systems shown in Figures 1-8 or in Figures 9-14.
  • Figure 16 is a schematic plan view of an apparatus having a linear array of the systems shown in Figures 1-8 or in Figures 9-14.
  • Figure 17 is a perspective view of a process system using sonic energy.
  • Figure 18 is a perspective view of the underside of the base shown in Figure 17.
  • Figure 19 is an enlarged section view of a spray nozzle shown in Figure 18.
  • Figure 20 is a section view taken along lines 20-20 of Figure 17.
  • a reactor 100 is provided for processing a microelectronic workpiece, such as a silicon wafer 55 having an upper side 12, a lower side 14, and an outer, circular perimeter 16, in a chamber.
  • a microelectronic workpiece such as a silicon wafer 55 having an upper side 12, a lower side 14, and an outer, circular perimeter 16, in a chamber.
  • the upper side 12 is the front side, which may be otherwise called the device side
  • the lower side 14 is the back side, which may be otherwise called the non-device side.
  • the workpiece 55 is inverted.
  • the reactor 100 has an upper chamber member or rotor 110 having an upper or chamber wall 120 and a lower chamber member or rotor 112 that includes a lower chamber wall 140. These walls 120 and 140 can move apart to allow a workpiece 55 to be loaded into the reactor 100 for processing, by a loading and unloading mechanism (not 120 and 140 are arranged to move together to form a chamber 160 around the wafer 55 in a processing position.
  • a loading and unloading mechanism not 120 and 140 are arranged to move together to form a chamber 160 around the wafer 55 in a processing position.
  • the reactor 100 is rotatable about an axis A.
  • a head 200 contains the upper rotor 110, which includes the upper chamber wall 120.
  • a motor 220 is provided for rotating the upper rotor 110.
  • the upper rotor 110 drives the lower rotor, so that when they are engaged, in the closed position, the upper rotor, lower rotor, and the workpiece all rotate together.
  • the motor 220 drives a sleeve 222, which is supported radially in the head 200, by rolling-element bearings 224.
  • the head 200 is lifted up for opening or separating the walls 120 and 140, and lowered for engaging the walls 120 and 140 or bringing them towards each other.
  • the upper chamber wall 120 has an inlet 122 for processing fluids, which may be liquid, vapors, or gases.
  • the lower chamber wall 140 also has an inlet 142 for such fluids.
  • the fluids provided through the inlets 122 and 142 may be similar fluids or different fluids.
  • the head 200 includes an upper nozzle 210 which extends axially through the sleeve 222, so as not to interfere with the rotation of the sleeve 222.
  • the upper nozzle 210 directs streams of processing fluids downwardly through the inlet 122 of the upper chamber wall 120 in the upper rotor.
  • the upper chamber wall 120 includes an array of similar outlets 124 spaced apart preferably at uniform angular spacings around the vertical axis A. In the design shown, thirty-six such outlets 124 are used. The outlets 124 are spaced outwardly from the vertical axis A by just slightly less than the workpiece radius. The outlets 124 are also spaced inwardly from the outer perimeter 16 of a workpiece 55 supported in the processing position by a much smaller radial distance, such as a distance of approximately 1-5 mm.
  • This chamber 160 includes an upper processing chamber section 126 defined by the upper chamber wall 120 and by a first or upper generally planar surface of the wafer 55.
  • the chamber 160 also includes a lower processing chamber or section 146 defined by the lower chamber wall 140 and a second or bottom generally planar surface of the supported wafer opposite the first side.
  • the upper and lower processing chambers 126 and 146 are connected or in fluid communication with each other via an annular region 130 beyond the outer perimeter 16 of the wafer 55.
  • an annular, compressible seal e.g. O-ring
  • the seal 132 allows processing fluids entering the lower inlet 142 to remain under sufficient pressure to As illustrated in Figure 3, the lower nozzle 260 is provided beneath the inlet 142 of the lower chamber wall 140, includes two or more ports 262. These direct two or more streams of processing fluids upwardly through the inlet 142.
  • the ports 262 are oriented so as to cause the directed streams to converge approximately where the directed streams reach the lower surface of the wafer 55.
  • the reactor 100 also preferably includes a purging nozzle 280, at a side of the lower nozzle 260, for directing a stream of purging gas, such as nitrogen, across the lower nozzle 260.
  • the reactor 100 may have a base 300 supporting the lower nozzle 260 and the purging nozzle 280 and which defines a coaxial, annular plenum 320.
  • the plenum 320 has several (e.g. four) drains 322 (one shown). Each drain is pneumatically actuated via a poppet valve 340 for opening and closing the drain 322. These drains 322 provide separate paths for conducting processing liquids of different types to appropriate systems (not shown) for storage, disposal, or recirculation. •
  • An annular skirt 360 on the upper rotor 210 extends around and downwardly from the upper chamber wall 120, above the plenum 320.
  • Each outlet 124 is oriented to direct processing fluids exiting such outlet 124 through fluid passages 364 against an inner surface 362 of the annular skirt 360.
  • the inner surface 362 is flared outwardly and downwardly, as shown. This causes processing fluids reaching the inner surface 362 to flow outwardly and downwardly toward the plenum 320, via centrifugal force when the rotors are rotated. Thus, processing fluids tend to be swept through the plenum 320, toward the drains 322.
  • the upper rotor 110 has a ribbed surface 215 facing and closely spaced from a smooth lower surface of the head 200, in an annular region 204 communicating with the plenum 320.
  • the ribbed surface 215 tends to cause air in the annular region 204 to swirl. This helps to sweep processing fluids through the plenum 320, toward the drains 322.
  • the upper chamber wall 120 has spacers 128 that project downwardly to prevent the lifting of wafer 55 from the processing position and from touching the upper chamber wall 120.
  • the lower chamber wall 140 has spacers 148 that project upwardly for spacing a wafer 55 above the lower chamber wall 140.
  • Posts 150 project upwardly just beyond the outer perimeter 16 of a wafer 55 to prevent the wafer 55 from shifting off center from the vertical axis A.
  • the lower rotor 112 may include a lifting mechanism 400 for lifting a wafer 55 supported in the processing position to an elevated position.
  • the lifting mechanism lifts the wafer 55 to the elevated position when the head 200 is raised above a wafer 55 to the elevated position allows it to be unloaded by a loading and unloading mechanism (not shown) such as a robotic arm.
  • the lifting mechanism 400 includes an array of lifting levers 420.
  • Each lifting lever 420 is mounted pivotably to the lower chamber wall 140 via a pivot pin 422 extending into a socket 424 in the lower chamber wall 140.
  • Each pivoting lever 420 is arranged to be engaged by the upper chamber wall 120 when the upper and lower chamber walls 120 and 140, are closed as the rotors are moved together.
  • Each pivoting lever 420 is then pivoted into the inoperative or down position.
  • Each lifting lever 420 is biased or spring loaded by an elastic member 440 (e.g. an O-ring) acting on a hook 425, to pivot into the operative position or up when not engaged by the upper chamber wall 120.
  • a pin 424 on each lifting lever 420 extends beneath a wafer 55 supported in the processing position and lifts the wafer to the elevated position, when the lifting lever 420 pivots from the down position into the up position.
  • the latching mechanism includes a latching ring 520 that is retained on the lower rotor 112 and that is adapted to engage a complementary shaped recesses 542 disposed in the upper chamber wall 120.
  • the latching ring 520 is made from a resilient spring material (e.g. polyvinylidine fluorid) with an array of inwardly stepped portions 530 which allow the latching ring 520 to deform from an undeformed condition in which the latching ring 520 has a first diameter into a deformed condition in which the latching ring 520 has a comparatively smaller diameter.
  • the latching mechanism 500 further includes an array of latching cams 545, each associated with a respective one of the stepped portions 530. Each latching cam 540 is adapted to apply radial forces to the respective stepped portions 530.
  • the latching mechanism 500 further includes an actuating ring 560, which is adapted to actuating the latching cams 540 as the actuating ring 560 is raised and lowered within a predetermined limited range of movement.
  • the actuating ring 560 is adapted, when raised, to actuate the latching cams 540, and, when lowered, to deactuate the latching cams.
  • Pneumatic lifters 580 e.g. three such devices are adapted to raise and lower the actuating ring 560.
  • pins 562 on the actuating ring 560 project upwardly and into apertures 564 in an aligning ring 570, when the actuating ring 560 is raised.
  • the aligning ring 570 is joined to, and rotates with, the lower chamber wall 140.
  • the pins 562 are withdrawn from the apertures 564 and clear the aligning ring 570 when the actuating ring 560 is lowered.
  • the pins 562 align a wafer 55 that had been supported in the processing position so as to facilitate unloading the wafer 55 via a robotic system, as mentioned above.
  • the processing chamber 160 is formed in the general shape of a flat workpiece, such as a semiconductor wafer or microelectronic workpiece 55 and closely conforms with the flat surfaces of the workpiece. Generally the workpiece and the gap between the upper and lower walls is about .75 mm.
  • the motor spins the rotors and the workpiece. Liquids or gases are introduced via the inlets 122 and 142. Liquids flow outwardly over the workpiece via centrifugal force. This coats the workpiece with a relatively thin liquid layer. The close spacing of the walls and the workpiece helps to provide controlled and uniform liquid flow. Gases, if used, can purge or confine vapors of the liquids, or provide chemical treatment of the workpiece as well.
  • the spinning movement drives the fluids outwardly over the workpiece, and then out of the chamber 160 through the outlets 124.
  • the valves 340 control release of fluids from the base 300.
  • Multiple sequential processes of a single workpiece can also be performed using two or more processing fluids sequentially provided through a single inlet of the reaction chamber.
  • a processing fluid such as HF liquid
  • an inert fluid such as nitrogen gas
  • the HF liquid is allowed to react with the lower surface of the wafer while the upper surface of the wafer is effectively isolated from HF reactions.
  • the reactor 100 can perform a wide range of functions. For example, reactor 100 can perform a process that requires complete contact of a processing fluid at a first side of a workpiece and at only a perimeter margin portion of the second side of the workpiece. Processing fluids entering the inlet 142 of the lower chamber wall 140 can act on the lower side 14 of a wafer 55. The fluids can also act on the outer perimeter 16 of the supported wafer 55, and on an outer margin 18 of the upper side 12 of the wafer 55 before reaching the outlets 124. Processing fluids entering the inlet 122 of the upper chamber wall 120 can act on the upper side 12 of the wafer 55, except for the outer margin 18 of the upper side 12, before reaching the outlets 124.
  • the reactor 100 can be used with control of the pressure of processing fluids entering the inlets 122 and 142, to carry out a process in which a processing fluid is allowed to contact a first side of the workpiece, the peripheral edge of the workpiece, and a peripheral region of the opposite side of the workpiece.
  • a processing fluid is allowed to contact a first side of the workpiece, the peripheral edge of the workpiece, and a peripheral region of the opposite side of the workpiece.
  • Such fluid flow/contact can also be viewed as a manner of excluding a processing fluid that is applied to the opposite side from a peripheral region of that side.
  • a thin film of material is etched from the first side, peripheral edge of the workpiece, and peripheral region of the opposite side of the workpiece.
  • Figures 9-13 shown in alternative system having a reactor which is open on the bottom, to apply fluids to a lower surface of a workpiece using other techniques.
  • the reactor may have a lower rotor which is open, to allow fluid to be applied to the bottom or device side of the workpiece, from a source external to the reactor. Alternatively, fluid can be applied through an opening in the lower rotor onto the backside of the workpiece if the workpiece is loaded device side up.
  • a system having a reactor leaving the bottom surface of the workpiece exposed for external application of a fluid preferably includes a reactor head having an annular lower rotor. The head is in a head up position for loading and unloading, and in a head down position for processing. The head is moveable towards and away from a base. The base applies fluid to the bottom surface of the workpiece, through the open lower rotor.
  • Figure 9 shows one design, out of many possible designs, of a reactor system 700 for device side down single sided processing of a workpiece, or for external application of a fluid to a bottom surface of a workpiece.
  • the system 700 includes a process head 714 attached to a support arm 711 of an elevator or lift assembly 702.
  • the support arm 711 is connected to the armature 710.
  • a support arm motor or actuator 712 in the armature 710 turns or pivots the process head 714, from the head up position, shown in Figure 9, to a head down position, shown in Figure 10.
  • a base 716 is provided below the process head 714.
  • the base 716 includes a fluid source, for providing a fluid onto the bottom surface of the workpiece 55.
  • the base 716 may be attached to the elevator assembly 702, or supported on the floor.
  • the elevator assembly 702 is preferably supported on the floor.
  • the base 716 is vertically aligned underneath the process head 714.
  • the elevator assembly 702 moves the process head 714 towards and away from the base 716.
  • Figure 9 shows the process head 714 lifted away from the base 716, and with the process head 714 in the head up position, for loading and unloading a workpiece 55.
  • Figure 10 shows the process head 714 in the head down position,' and with the process head 714 engaged with the base 16, for applying a fluid to the bottom surface of the workpiece 55.
  • the design shown in Figures 9 and 10 has the base 716 fixed onto the elevator assembly 702.
  • the process head 714 is moveable in the vertical direction N towards and away from the base 716.
  • the process head 714 is also pivotable about a horizontal access H. While these are the preferred relative movements between the process head 714, the elevator assembly 702, and the base 716, various other movements may also be used.
  • one or more process heads 714 may pivot about a vertical axis, such as axis E shown in Fig. 9.
  • One or more bases 716 may be fixed or moveable, vertically, laterally, longitudinally, or pivotally or rotationally about a vertical axis.
  • the base 716 or bases may be moveable or fixed relative to its supporting structure, such as the elevator assembly 702.
  • the process head 714 may be provided with other forms of movement.
  • the process head 714 may be supported from above, or in other ways.
  • the process head 714 may also be supported or c onnected directly to the base 716, rather than to the elevator assembly 702.
  • the head up position shown in Figure 9 and the support arm motor 712, which provides movement between the head up and head down positions, may be omitted, with all functions, including loading and unloading performed in the head down position.
  • Figures 9 and 10 while showing the preferred design, is just one of many designs contemplated by the invention.
  • the process head or rotor 714 is similar in design and operation to the reactor shown in Figures 1-8 except as described below.
  • the process head 714 shown in Figures 9-14 performs processing in the head down position "below,” “up,” or “down,” and similar terms describing positions, relative to gravity, are used here in describing the system 700 with the process head 714 in the head down position.
  • the head down position in Figure 10 corresponds to Figures 13 and 14 inverted.
  • the process head 714 includes a lower or outer rotor 730 positioned around or below an upper or inner rotor 732, within a head housing 734.
  • the upper rotor 732 is connected to a head spin motor 738 by a shaft 741.
  • Fluids may be provided to the upper surface of the workpiece 55 via an upper nozzle 744 supplied with a fluid via supply lines extending through the tube 740, similar to the reactor of Figures 1-8.
  • the motor 738 is supported on the head housing 734 by a motor plate 746, shown in Figure 12.
  • a head cover 736 attached to the head housing 734 covers or encloses the internal components of the process head 714.
  • the lower or outer rotor 730 has a ring or annular structure.
  • a central opening or area 731 in the lower rotor 730 allows liquid from the base 716 to be applied to the bottom surface of the workpiece 55.
  • a lower rotor ring 748 is attached to the top surface of the lower rotor 730.
  • the lower rotor 730 is attached to and rotates with the upper rotor via the lower rotor ring.
  • a bellows 750 is attached to the lower rotor ring 748 and to a top plate 752 of the upper rotor 732.
  • lower rotor extension actuators 760 are attached to the motor plate 746.
  • each actuator 760 extends through an opening in the motor plate 746 and the head housing 734 and pushes on the lower rotor ring 748.
  • three pneumatic actuators 760 are provided, equally spaced apart on the motor plate 746.
  • the actuators 760 move the lower rotor 730 from an extended or out position, as shown in Figures 11 and 12, for loading and unloading.
  • Return springs 742 shown in Fig. 13, exert force continuously urging the lower rotor 730 into engagement against the upper rotor 732.
  • the return springs move the lower rotor to a retracted or in position, for processing, and shown in Figures 13 and 14.
  • a load/unload opening or window 762 extends through the preferably cylindrical side wall of the lower rotor 730.
  • a load/unload or access slot 764 is provided in the preferably cylindrical side wall of the upper rotor 732.
  • the upper rotor 732 rotates about axis N in Fig. 12 when driven by the spin motor 738.
  • the upper rotor 732 is otherwise preferably fixed in position relative to the head housing 734.
  • the lower rotor 730 spins with the upper rotor 732, and is also axially moveable in the direction parallel to axis V, between the positions shown in Figures 11 and 12, on the one hand, and Figures 13 and 14, on the other.
  • the window 762 and the lower rotor 730 extends vertical dimension or height between the workpiece 55 and the upper rotor 732, as indicated by F, is sufficient to allow an end effector or other robotic implement or tool, to move through the window 762, to lift the wafer off of the upper rotor 732.
  • the width W of the window 762 is nominally larger than the diameter or characteristic dimension of the workpiece 55, so that the robot can withdraw the workpiece out of the process head 714 through the window 762.
  • the upper rotor 732 has pins or supports 766 for supporting the workpiece around its perimeter, and spaced apart from the rest of the upper rotor 732.
  • pins or support 768 on the lower rotor 730 extend towards the workpiece 55, to hold the workpiece 55 spaced apart from the annular structure of the lower rotor 730.
  • the upper rotor 732 also has guide pins 769 positioned on a circle nominally larger than the diameter of the workpiece.
  • the guide pins 769 keep the workpiece generally centered on the upper rotor.
  • the guide pins extend out of the upper rotor 732 to a height of 1-5, 2-4, and typically by about 2.5 mm.
  • the workpiece support pins 766 have a nominal height of about 0.7-0.8 mm.
  • the support pins 768 on the lower rotor extend out from the lower rotor by about .0.7-0.8 mm. With a workpiece having a thickness of about 0.7-0.8 mm, there is a nominal vertical clearance of about .25 mm between the support pins and the workpiece, when the rotors are brought together.
  • the guide pins 769 act as a hard stop and set the spacing between the rotors.
  • the window 762 is moved within the head housing 734, and the slot 764 in the upper rotor 732 is covered or closed off by the solid curved side wall of the lower rotor 730.
  • outlets 772 extend through the side walls of the lower rotor 730 from an annular channel 771 extending continuously around the lower rotor.
  • outlets 770 extend through the upper rotor 732. Referring to Figure 13, with the lower rotor 730 in the retracted position, the outlets 770 connect into with the annular channel 771, providing an outlet path from the space or chamber 775 formed between the upper surface of the workpiece 55 and the lower surface of the upper rotor 732.
  • a radial seal 774 seals the upper and lower rotors when the lower rotor moves into the process position shown in Fig. 13.
  • the base 716 provides a liquid onto the lower surface of the base 716 may include various devices for this purpose, such as a contact or immersion type bowl, a center nozzle spray system, and an array of fixed spaced apart spray nozzles, or one or more moveable spray nozzles, such as one or more nozzles on a translating or pivoting arm.
  • various devices for this purpose such as a contact or immersion type bowl, a center nozzle spray system, and an array of fixed spaced apart spray nozzles, or one or more moveable spray nozzles, such as one or more nozzles on a translating or pivoting arm.
  • liquid outlets which facilitate liquid contact to the workpiece may be used instead of spray nozzles.
  • FIGS 9 and 10 show a system 700 having a surface contact or immersion bowl or basin 780 in the base 716.
  • Edge vanes 782 may be provided around the circumference of the bowl 780, to capture and guide liquid flowing off of or otherwise removed from the workpiece 55 during processing.
  • a gas or liquid inlet 786 extends into the bowl 780, adjacent to the edge vanes 782, if used.
  • Liquid inlets 792 and outlets or drains 788 provide liquid into and out of the bowl 780. Multiple inlets 792, connected to different process liquid sources may be provided.
  • a single workpiece 55 is loaded into the process head 714.
  • the process head 714 is in the head up position and is elevated or lifted up and away from the base 716.
  • the lower rotor 730 is in the extended position.
  • a workpiece 55 is moved horizontally through the window 762 in the lower rotor 730 and through the slot 764 in the upper rotor 732.
  • the workpiece 55 is loaded via a robot.
  • the height H of the slot 764 is sufficient to allow the workpiece and robot end effector to clear or fit between the pins 766 and 768.
  • the end effector or hand of the robot can fit through the side slots or openings 762 and 764 and into the chamber 775 to load the workpiece.
  • the workpiece 55 is lowered down (in the direction of gravity) and rests on the pins 766.
  • the actuators 760 are de-activated, allowing the springs 742 to draw the lower rotor 730 from the extended position shown in Figure 11, to the retracted position shown in Figure 13.
  • the workpiece 55 is secured between the pins 766 and 768.
  • the edge seal ring 774 shown in Figure 15, largely seals the upper and lower rotors together, to prevent or minimize leakage between them.
  • With the lower rotor 730 in the retracted position the window 762 and slot 764 are no longer aligned.
  • the direct access entry into the chamber 775 is consequently closed off.
  • the motor 712 moves the process head 714 from the head up position shown in Figure 9 to the head down position shown in Figure 10.
  • the elevator assembly 702 moves the process head 714 into engagement with the base 716.
  • a process liquid is provided into the bowl 780 through the liquid inlets 792, forming a bath of liquid.
  • the bottom surface of the workpiece 55 contacts the bath.
  • the workpiece 55 may be fully immersed in the bath.
  • only the bottom surface, or the bottom surface and to the bath may be adjusted by varying the liquid level in the basin 780, or by varying the relative vertical positions of the process head 714 and the base 716.
  • the level of liquid in the bowl 780 is set via the height of a weir 794 at the sidewalls of the bowl.
  • the workpiece 55 may be stationary while in contact with the bath.
  • the spin motor 738 may spin the workpiece, preferably at low RPM, to help facilitate movement of liquid across the workpiece surfaces.
  • Another process vapor, gas or liquid may be provided onto the top surface of the workpiece through the upper nozzle 744.
  • the bowl 780 may be replaced by other liquid applicators, such as fixed or moving spray nozzles or liquid outlets. After processing with the bath of liquid is completed, the liquid in the bowl 780 is drained or removed via the drain outlets 788.
  • the workpiece optionally may then be rotated at higher speeds, with or without additional process fluid introduced to the top surface of the workpiece by the nozzle 744.
  • the head may lift up slightly* before rotation.
  • a gas such as nitrogen or air, may be introduced into the base 716 by the gas inlet 786, to help remove or purge liquid from the base.
  • the elevator assembly 702 lifts the process head 714 away from the base 716, by actuating the elevator motor 706.
  • the support arm motor 712 returns the process head 714 back to the head up position.
  • the extension actuators 760 move the lower rotor 730 back to the extended position. The workpiece is then removed from the process head 714.
  • the system 700 allows for device side down processing, to better facilitate various process steps, especially as they relate to processing semi-conductor wafers.
  • the amount of run out of the workpiece in the design of Figures 9-14 is better controlled, because the workpiece is held by the same, part that controls the edge etch zone, and has only two interfaces between the motor shaft 741 and the workpiece 55.
  • the first interface is between the top plate and the motor shaft 741.
  • the second interface is between the top plate and the upper rotor 732.
  • a robotic arm 610 rotates about axis 615 to perform the transport operations along path 606 between a load/unload station 607 and reactors 100 and/or 700.
  • one or more robotic arms 625 travel along a linear path 630 to perform the required transport operations between a load/unload station 607 and reactors 100 and/or 700.
  • the present invention has been illustrated with respect to a wafer. However, it will be recognized that the present invention has a wider range of applicability. By way of example, the present invention is applicable in the processing of disks and heads, flat panel displays, microelectronic masks, and other devices requiring effective and controlled wet processing.
  • a processing system 810 using sonic energy has a process head 812 and a base 814.
  • the head 812 has an upper rotor 838 which engages with a lower rotor 836 to hold a workpiece 55 between them.
  • a motor 850 rotates the rotors.
  • a bellows 840 attached to the upper and lower rotors helps to keep process chemicals out of the internal components of the head 812. Workpieces may be loaded and unloaded into and out of the head through a side opening 842, when the head is in a load/unload position.
  • An upper nozzle 846 introduces a process fluid onto the top surface of the workpiece.
  • the base 814 includes a base plate 816.
  • a sonic transducer 820 such as a megasonic transducer, is attached to or part of the base plate 816.
  • the sonic transducer 820 is generally rectangular and is preferably centered on the spin axis of the head 812. As shown in Fig. 20., the sonic transducer is installed in a central opening in the base plate 816 and forms the central bottom section of a bowl or liquid holding vessel 817.
  • Spray nozzles 822 extend through the base plate 816. As shown in Figure 18, preferably, a series of spray nozzles 822 are provided on opposite sides of the sonic transducer 820, near the center of the process head 812. The spray nozzles are oriented to spray liquid at an angle towards the center of the workpiece 55.
  • Flood nozzles or inlets 830 also extend through the base plate 816 into the bowl 817. The flood nozzles 830 are used to fill the bowl 817 with liquid, for liquid contact or immersion processing of the bottom or device side of the workpiece 55.
  • the flood nozzles 830 may be provided in openings passing through the sonic transducer 820.
  • the flood nozzles 830 may be positioned to one side of the transducer 820, adjacent to the spray nozzles 822. Drain outlets 824 extend from the bowl 817 to one or more drain valves 826. The sonic transducer 820 is sealed against the base plate 816 by an O-ring 828.
  • each spray nozzle 822 preferably has a fluid tube 832 extending through a nozzle body 834.
  • a directional opening 835 at the upper end of the fluid tube 832 directs a spray of fluid towards the lower surface of a workpiece on the process head 812 engaged to the base 814.
  • the transducer 820 With the bowl 817 in the base 814 containing liquid and with a workpiece in the liquid, the transducer 820 is energized. Sonic energy from the transducer 820 travels through the liquid to the workpiece in contact with the liquid 822. The sonic energy assists and enhances processing.
  • the spray nozzles 822 are used to spray liquid onto the bottom surface of the workpiece, for example, in a rinsing step, after the liquid in the bowl
  • the motor 850 may rotate the workpiece while the workpiece is in contact with the liquid.
  • the flood nozzles 830 provide a continuous flow of liquid into and through the bowl 817. Liquid overflows over a drain weir 860 on the base and into a drain channel 862 which bypasses the drain valves 826 and connects into a drain line. This constant flow of liquid helps to carry potential contaminants away from the workpiece.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

L'invention concerne un système de traitement de pièces à travailler comprenant une base dotée d'une cuve ou d'un évidement destiné à retenir un liquide. Un réacteur ou une tête de traitement retient une pièce à travailler entre un rotor supérieur et un rotor inférieur. Un dispositif de levage abaisse la tête retenant la pièce à travailler en contact avec le liquide. La tête fait tourner la pièce à travailler pendant ou après le contact avec le liquide. Les rotors supérieurs et inférieur présentent des ouvertures latérales pour charger et décharger une pièce à travailler au niveau de la tête. Les rotors, qui se déplacent de manière axiale, permettent d'aligner les ouvertures latérales.
PCT/US2002/023297 2001-07-16 2002-07-10 Appareil de traitement de pièce à travailler WO2003008140A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2002322587A AU2002322587A1 (en) 2001-07-16 2002-07-10 Apparatus for processing a workpiece

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US09/907,552 US6492284B2 (en) 1999-01-22 2001-07-16 Reactor for processing a workpiece using sonic energy
US09/907,522 US6680253B2 (en) 1999-01-22 2001-07-16 Apparatus for processing a workpiece
US09/907,522 2001-07-16
US09/907,552 2001-07-16

Publications (2)

Publication Number Publication Date
WO2003008140A2 true WO2003008140A2 (fr) 2003-01-30
WO2003008140A3 WO2003008140A3 (fr) 2003-11-06

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Country Status (3)

Country Link
AU (1) AU2002322587A1 (fr)
TW (1) TW559571B (fr)
WO (1) WO2003008140A2 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103140611A (zh) * 2010-08-13 2013-06-05 应用材料公司 电化学电镀装置中的去镀触点

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Publication number Priority date Publication date Assignee Title
US3727620A (en) * 1970-03-18 1973-04-17 Fluoroware Of California Inc Rinsing and drying device
US4132567A (en) * 1977-10-13 1979-01-02 Fsi Corporation Apparatus for and method of cleaning and removing static charges from substrates
JPS59208831A (ja) * 1983-05-13 1984-11-27 Hitachi Tokyo Electronics Co Ltd 塗布装置
JPS61178187U (fr) * 1985-04-26 1986-11-06
JPS63185029A (ja) * 1987-01-28 1988-07-30 Hitachi Ltd ウエハ処理装置
AT389959B (de) * 1987-11-09 1990-02-26 Sez Semiconduct Equip Zubehoer Vorrichtung zum aetzen von scheibenfoermigen gegenstaenden, insbesondere von siliziumscheiben
US5168886A (en) * 1988-05-25 1992-12-08 Semitool, Inc. Single wafer processor
US5222310A (en) * 1990-05-18 1993-06-29 Semitool, Inc. Single wafer processor with a frame
JP3388628B2 (ja) * 1994-03-24 2003-03-24 東京応化工業株式会社 回転式薬液処理装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103140611A (zh) * 2010-08-13 2013-06-05 应用材料公司 电化学电镀装置中的去镀触点

Also Published As

Publication number Publication date
TW559571B (en) 2003-11-01
WO2003008140A3 (fr) 2003-11-06
AU2002322587A1 (en) 2003-03-03

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