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WO2003009368A3 - Transistor bipolaire à hétérojonction grande vitesse à base de gaas comportant des contacts à faible résistance d'émission - Google Patents

Transistor bipolaire à hétérojonction grande vitesse à base de gaas comportant des contacts à faible résistance d'émission Download PDF

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Publication number
WO2003009368A3
WO2003009368A3 PCT/US2002/023278 US0223278W WO03009368A3 WO 2003009368 A3 WO2003009368 A3 WO 2003009368A3 US 0223278 W US0223278 W US 0223278W WO 03009368 A3 WO03009368 A3 WO 03009368A3
Authority
WO
WIPO (PCT)
Prior art keywords
high speed
emitter resistance
resistance contacts
low emitter
gaas high
Prior art date
Application number
PCT/US2002/023278
Other languages
English (en)
Other versions
WO2003009368A2 (fr
Inventor
Noren Pan
Byung-Kwon Han
Original Assignee
Microlink Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Microlink Devices Inc filed Critical Microlink Devices Inc
Publication of WO2003009368A2 publication Critical patent/WO2003009368A2/fr
Publication of WO2003009368A3 publication Critical patent/WO2003009368A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/021—Manufacture or treatment of heterojunction BJTs [HBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H10D62/136—Emitter regions of BJTs of heterojunction BJTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/852—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs being Group III-V materials comprising three or more elements, e.g. AlGaN or InAsSbP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs

Landscapes

  • Bipolar Transistors (AREA)

Abstract

L'invention concerne un transistor bipolaire à hétérojonction ayant une meilleure fréquence de coupure de gain de courant. Ce transistor bipolaire à hétérojonction comprend une région de contact constituée de InGaAsSb. Grâce à cette région de contact, une région d'émission du transistor bipolaire à hétérojonction peut présenter une faible valeur de résistance du contact de façon à produire une meilleure fréquence de coupure (fT).
PCT/US2002/023278 2001-07-20 2002-07-22 Transistor bipolaire à hétérojonction grande vitesse à base de gaas comportant des contacts à faible résistance d'émission WO2003009368A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US30683301P 2001-07-20 2001-07-20
US60/306,833 2001-07-20

Publications (2)

Publication Number Publication Date
WO2003009368A2 WO2003009368A2 (fr) 2003-01-30
WO2003009368A3 true WO2003009368A3 (fr) 2003-11-27

Family

ID=23187065

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/023278 WO2003009368A2 (fr) 2001-07-20 2002-07-22 Transistor bipolaire à hétérojonction grande vitesse à base de gaas comportant des contacts à faible résistance d'émission

Country Status (1)

Country Link
WO (1) WO2003009368A2 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1314088C (zh) * 2003-11-10 2007-05-02 四川大学 一种低开启电压砷化镓基异质结双极晶体管

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0338834A (ja) * 1989-07-06 1991-02-19 Nec Corp 半導体結晶
US5598015A (en) * 1992-09-18 1997-01-28 Hitachi, Ltd. Hetero-junction bipolar transistor and semiconductor devices using the same
US6232624B1 (en) * 1999-07-12 2001-05-15 Hughes Electronics Corporation InPSb channel HEMT on InP for RF application
US6287946B1 (en) * 1999-05-05 2001-09-11 Hrl Laboratories, Llc Fabrication of low resistance, non-alloyed, ohmic contacts to InP using non-stoichiometric InP layers
US6320212B1 (en) * 1999-09-02 2001-11-20 Hrl Laboratories, Llc. Superlattice fabrication for InAs/GaSb/AISb semiconductor structures
US6429468B1 (en) * 2000-12-30 2002-08-06 National Science Council In0.34A10.66AsSb0.15/InP HFET utilizing InP channels

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0338834A (ja) * 1989-07-06 1991-02-19 Nec Corp 半導体結晶
US5598015A (en) * 1992-09-18 1997-01-28 Hitachi, Ltd. Hetero-junction bipolar transistor and semiconductor devices using the same
US6287946B1 (en) * 1999-05-05 2001-09-11 Hrl Laboratories, Llc Fabrication of low resistance, non-alloyed, ohmic contacts to InP using non-stoichiometric InP layers
US6232624B1 (en) * 1999-07-12 2001-05-15 Hughes Electronics Corporation InPSb channel HEMT on InP for RF application
US6320212B1 (en) * 1999-09-02 2001-11-20 Hrl Laboratories, Llc. Superlattice fabrication for InAs/GaSb/AISb semiconductor structures
US6429468B1 (en) * 2000-12-30 2002-08-06 National Science Council In0.34A10.66AsSb0.15/InP HFET utilizing InP channels

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
HUMMEL R.E.: "Electronic properties of materials", 2001, SPRINGER, XP002960165 *
OHRING M.: "Materials science of thin films", 2002, ACADEMIC, pages: 444 - 450, XP002960178 *

Also Published As

Publication number Publication date
WO2003009368A2 (fr) 2003-01-30

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