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WO2003012847A1 - Procede de surveillance d'un appareil de production de semi-conducteurs et procede de commande - Google Patents

Procede de surveillance d'un appareil de production de semi-conducteurs et procede de commande Download PDF

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Publication number
WO2003012847A1
WO2003012847A1 PCT/JP2002/007858 JP0207858W WO03012847A1 WO 2003012847 A1 WO2003012847 A1 WO 2003012847A1 JP 0207858 W JP0207858 W JP 0207858W WO 03012847 A1 WO03012847 A1 WO 03012847A1
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WO
WIPO (PCT)
Prior art keywords
detection data
semiconductor manufacturing
manufacturing apparatus
sensors
allowable range
Prior art date
Application number
PCT/JP2002/007858
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English (en)
Japanese (ja)
Inventor
Masayuki Tomoyasu
Original Assignee
Tokyo Electron Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Limited filed Critical Tokyo Electron Limited
Publication of WO2003012847A1 publication Critical patent/WO2003012847A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge

Definitions

  • the present invention relates to a method for monitoring a semiconductor manufacturing apparatus and a method for controlling the same, and more particularly, to monitoring a semiconductor manufacturing apparatus so as to manufacture a semiconductor element meeting predetermined specifications when manufacturing a semiconductor element on an object to be processed.
  • the present invention relates to a method of monitoring a semiconductor manufacturing apparatus that can be controlled and a method of controlling the method.
  • Various semiconductor manufacturing apparatuses are used in a semiconductor manufacturing process.
  • Semiconductor manufacturing equipment such as a plasma processing apparatus is widely used in a film forming step and a etching step of a target object such as a semiconductor wafer (hereinafter, referred to as a “wafer”) and a glass substrate.
  • a target object such as a semiconductor wafer (hereinafter, referred to as a “wafer”) and a glass substrate.
  • a semiconductor device hereinafter, referred to as a “device”
  • an optimal device parameter high frequency
  • the semiconductor manufacturing device After setting these device parameters, the semiconductor manufacturing device is operated. During operation, a parameter sensor that monitors the device parameters is used to detect the actual value of each parameter, and it is also necessary to detect the harmonics, phase, and impedance of the high-frequency power supply that affect the processing of the wafer. Operational data such as the target signal and plasma emission intensity are detected via the additional sensors, and the semiconductor manufacturing equipment is monitored and controlled based on these detected data. At this time, the detection data from the plurality of parameter sensors and the additional sensor are analyzed by statistical processing such as multivariate analysis to obtain a correlation between the respective detection data, and the processing result of the wafer is determined based on the correlation.
  • a parameter sensor that monitors the device parameters is used to detect the actual value of each parameter, and it is also necessary to detect the harmonics, phase, and impedance of the high-frequency power supply that affect the processing of the wafer. Operational data such as the target signal and plasma emission intensity are detected via the additional sensors, and the semiconductor manufacturing equipment is monitored and controlled
  • the parameter sensor is a sensor that detects actual measured values of a plurality of device parameters.
  • the additional sensor refers to the sensor to be monitored.
  • the additional sensor is a factor that affects the processing state of the wafer other than the equipment parameters, such as electrical signals such as harmonics, phase, and impedance of a high-frequency power supply, plasma emission intensity, and exhaust gas. It is a sensor that detects and monitors the gas components and the like.
  • Japanese Patent Application Laid-Open No. 10-125660 uses a model equation based on multivariate analysis that associates an electrical signal reflecting a plasma state with plasma processing characteristics, and models the electrical signal value during processing.
  • a technique for predicting plasma characteristics by applying the equation has been proposed.
  • Japanese Patent Application Laid-Open No. H10-135,091 discloses, in a process processing step, product quality result information such as yield information and electrical characteristic information and in-line measurement information such as manufacturing apparatus history information.
  • a technique has been proposed that uses information that affects product quality and analyzes the causal relationship between the quality result information of these products and the information that affects product quality using multi-stage multivariate analysis means.
  • Japanese Patent Laid-Open Publication No. Hei 11-87332 analyzes multiple process parameters, statistically correlates these parameters, and detects changes in process characteristics based on this correlation.
  • techniques have been proposed to prevent the adverse effects of single data noise.
  • the operator monitors and controls the processing status of wafers using parameter sensors and additional sensors.
  • the permissible range of the sensor's detection value the upper and lower limits are set to a safer side than the assumed permissible limit, so the control range of the device is narrow and the operation tends to be cramped.
  • the control range is for the production of non-defective devices conforming to the specifications, the upper and lower limits are set to the safe side, so the detected values of the sensors easily exceed the set range, and the operation time is shortened and the operation starts. There was a problem that the rate decreased.
  • a model expression is obtained by performing a multivariate analysis process by associating a plurality of detection data obtained through a plurality of sensors with a processing result. After that, the plasma processing characteristics are predicted by applying each detected data to this model formula, and based on the predicted values, the plasma state is determined to be normal or abnormal, and the processing result of the wafer is predicted.
  • the present invention has been made to solve the above-mentioned problems, and it is possible to increase the operation rate by giving a wide range of operation of the apparatus, and to judge the normality or abnormality of the processing on the object with high sensitivity. It is an object of the present invention to provide a method of monitoring a semiconductor manufacturing apparatus and a method of controlling the same, which can easily and surely correct a normal state even when there is an abnormality in processing of an object to be processed. Disclosure of the invention
  • a method for monitoring a semiconductor manufacturing apparatus comprises: setting a plurality of apparatus parameters of the semiconductor manufacturing apparatus in the semiconductor manufacturing apparatus; A method of monitoring a semiconductor manufacturing device based on a previously created variation allowable range group of detection data of a plurality of sensors of the semiconductor manufacturing device when manufacturing a predetermined semiconductor element on a body,
  • the step of creating the variation allowable range group includes the plurality of device parameters that satisfy the expected specifications based on the specifications of the object to be processed, the expected specifications of the semiconductor element, and the characteristics of the semiconductor manufacturing device. Determining a permissible range thereof; processing each of the plurality of device parameters within the permissible range to process a trial workpiece; and processing the trial workpiece.
  • the method for monitoring a semiconductor manufacturing apparatus according to claim 3 of the present invention includes a method for monitoring a plurality of detected data from at least one sensor detected in an actual process and a method for monitoring the fluctuation tolerance. Characterized by comparison with corresponding permissible detection data of enclosures o
  • the method for monitoring a semiconductor manufacturing apparatus is characterized in that an abnormality is reported when at least one of the plurality of pieces of detection data deviates from a corresponding allowable detection data. Things.
  • the method of monitoring a semiconductor manufacturing apparatus wherein at least one of the plurality of detection data reaches an abnormal approach data value close to a corresponding allowable detection data.
  • the feature is to notify that the vehicle is approaching an abnormal state.
  • a method of controlling a semiconductor manufacturing apparatus wherein a plurality of device parameters of the semiconductor manufacturing apparatus are set in the semiconductor manufacturing apparatus, and a predetermined semiconductor element is manufactured on an object to be processed.
  • a method of controlling the semiconductor manufacturing apparatus based on a previously created variation allowable range group of a plurality of detection data of at least one sensor of the semiconductor manufacturing apparatus, wherein the variation allowable range group is created. Determining the plurality of device parameters that satisfy the expected specifications based on the specifications of the object to be processed, the expected specifications of the semiconductor element, and the characteristics of the semiconductor manufacturing apparatus.
  • the control method of a semiconductor manufacturing apparatus is a method for controlling a plurality of detection data from at least one sensor detected in an actual process and a corresponding allowable detection of the fluctuation allowable range group. It is characterized by comparing each day with ⁇
  • the method for controlling a semiconductor manufacturing apparatus wherein at least one of the plurality of detection data reaches an abnormally close data value close to a corresponding allowable detection data.
  • the feature is to notify that the vehicle is approaching an abnormal state.
  • FIG. 1 is a configuration diagram showing an example of a semiconductor manufacturing apparatus used in the method of the present invention.
  • FIG. 2 is an explanatory diagram conceptually showing the correspondence between process conditions and detection data.
  • the plasma processing apparatus 10 includes an aluminum processing chamber 11 capable of maintaining a high vacuum, A lower electrode 12 also serving as a mounting table on which the lower electrode 12 is placed, and an upper electrode 13 disposed above the lower electrode 12, and a lower electrode 12 and an upper electrode 13 are provided as described later.
  • the wafer W on the lower electrode 12 is etched by the plasma of the generated process gas.
  • a first high-frequency power supply 14 is connected to the lower electrode 12 via a matching unit 14A, and for example, high-frequency power of 2 MHz is applied from the first high-frequency power supply 14.
  • An electric measuring device 14 B is connected between the lower electrode 12 and the matching device 14 A, and the fundamental frequency of the high-frequency power supply 14 applied to the lower electrode 12 via the electric measuring device 14 B and Measures electrical signals such as voltage, current, phase, and impedance of harmonics.
  • a first high frequency power supply 15 is connected to the upper electrode 13 via a matching unit 15A. For example, high frequency power of 60 MHz is applied from the first high frequency power supply 15.
  • An electric measuring device 15B is connected between the upper electrode 13 and the matching device 15A, and the fundamental frequency of the high-frequency power supply 15 applied to the upper electrode 13 via the electric measuring device 15B. And harmonic voltage, current, phase, Measure electrical signals such as impedance dances.
  • the upper electrode 13 is formed, for example, in a hollow shape, and a process gas supply source (not shown) is connected to an upper surface of the upper electrode 13 via a gas pipe 16.
  • the process gas supply source is configured to supply two types of gases, for example, an etching gas such as a CF-based gas and a carrier gas such as an argon gas, and the first and second gas pipes 16 A and 16 are respectively provided.
  • B joins in the gas pipe 16 to supply a mixed gas of an etching gas and a carrier gas to the upper electrode 13 as a process gas.
  • Numerous holes are formed on the lower surface of the upper electrode 13 so as to be evenly distributed over the entire surface, and process gas is supplied into the processing chamber 11 through these holes.
  • the first and second gas pipes 16A and 16B are provided with first and second flow control devices 17A and 17B, respectively.
  • the flow rates of the etching gas and carrier gas are individually controlled via 17B.
  • the first and second gas pipes 16A and 1668 are provided with first and second gas flow sensors 18A and 19B, respectively. 8 Detect the flow rate of etching gas and carrier gas through B.
  • a focus ring 19 is provided on the outer peripheral portion of the upper surface of the lower electrode 12, and the plasma generated in the processing chamber 11 is focused on the wafer W via the focus ring 19.
  • An electrostatic chuck (not shown) is provided inside the focus ring 19, and the wafer W is electrostatically attracted via the electrostatic chuck.
  • a temperature sensor 20 is provided on the lower electrode 12, and detects the temperature of the lower electrode 12 when processing the wafer W via the temperature sensor 20, and thus detects the temperature of the wafer W.
  • a window 11 A filled with, for example, quartz glass is formed on a side surface of the processing chamber 11, and a plasma emission spectrometer 21 constituting an end point detection device is disposed in the window 11 A. ing.
  • the spectroscope 21 separates a specific wavelength, and the end point of the etching is detected based on a change in intensity at the specific wavelength.
  • Processing chamber 1 1 detects internal pressure A pressure sensor (not shown) is provided, and detects the pressure in the processing chamber 11 via the pressure sensor.
  • the high-frequency power supplies 14 and 15 and the first and second flow rate control devices 17 A and 17 B are connected to a control device 22, and the etching device parameters are controlled via the control device 22.
  • sensors such as electric measurement devices 14B and 15B, gas flow sensors 18A and 18B, temperature sensor 20 and plasma emission spectrometer 21 are connected to the control device 22. Detecting the etching situation via the sensor. Then, the control device 22 controls the plasma processing device 10 based on the detection value from the sensor to perform desired etching.
  • Electrical measuring instruments 14 B, 15 B, gas flow sensors 18 A, 18 B, temperature sensor 20, pressure sensor, etc. can be directly set as processing conditions for wafer W. It will work as a sensor for monitoring parameters.
  • the plasma emission spectrometer 21 cannot be directly set as the processing condition of the wafer W, but acts as an additional sensor for monitoring a parameter value that affects the processing condition of the wafer W.
  • the electric measuring instruments 14B and 15B are additional sensors for detecting electrical signals such as voltage, current, phase, impedance, etc. of the fundamental frequency and harmonics of the high-frequency power supplies 14 and 15 Will also work.
  • the control device 22 includes a detection data storage unit 22A that stores detection values from the parameter sensor and the additional sensor as detection data, respectively, A variation allowable range group creating unit 22B that creates a variation allowable range group based on the detection data stored in the storage unit 22A, and a variation allowable range created via the variation allowable range group creating unit 22B.
  • a tolerable range group storage unit 22 C that stores the range group, a comparison that compares the tolerable range group with the detected data obtained during the actual process, a judgment unit 22 D, and a central control that controls these. Part 2 2E is provided. This variation allowable range group is created using the trial wafer W before the actual process is performed as described below.
  • an input / output device 23 is connected to the control device 22. The device parameters and the like are set via the input / output device 23, and the processing result is output to the input / output device 23. .
  • the above-mentioned fluctuation allowable range group includes detection data of a plurality of sensors (parameter sensor and additional sensor) when etching that satisfies a desired device specification (expected structure) is performed. It is composed of a group of evenings gathered together.
  • This range includes the maximum value and the minimum value of the detection data of each sensor when a device that satisfies the expected structure is manufactured. Therefore, when all the detection data of a plurality of sensors have detection values between the maximum value and the minimum value, a semiconductor device that satisfies the expected structure by normal etching (hereinafter, simply referred to as “non-defective product”) is manufactured.
  • the semiconductor device does not satisfy the expected structure due to abnormal etching (hereinafter simply referred to as “defective product”). ) Can be determined to be manufactured. It should be noted that even if a device is determined to be defective here, it does not mean a device that is not entirely usable, but there is a classification of defective products, and there are applications according to each class.
  • a method of creating a variation allowable range group will be described. As described above, the allowable variation group is created using the trial wafer W before the actual process is performed. A trial wafer W having the same material and structure as the actual process is used.
  • the fluctuation tolerance group When creating the fluctuation tolerance group, it is considered to be optimal based on the specifications of the wafer W before the etching process, the expected structure of the device after the etching process, the tolerance of the expected structure, and the characteristic library of the plasma processing equipment.
  • the parameters of multiple devices to be obtained are obtained by the same method as in the past.
  • the specifications of the test wafer w include, for example, information on the base material (information on film type, film thickness, structure, manufacturing method), information on the film to be etched (information on film type, film thickness, structure, manufacturing method, etc.) and mask There is information on materials (information on film type, film thickness, mask pattern, etc.).
  • Information representing the expected structure of the device includes, for example, information such as pattern width, etching depth, taper angle, bowing degree, and mask material etching amount from the device shape surface, and from the electrical characteristics surface. Contains information such as wiring resistance, contact resistance, charge amount, leakage current, and dielectric breakdown.
  • the allowable range of the expected structure means a range that can be tolerated even if the values of the shape and electrical characteristics are slightly different from the device specifications.
  • the information of the characteristic library of the plasma processing apparatus includes, for example, information on the type of the plasma processing apparatus, the processing chamber, the electrode structure, the high-frequency power supply, and the like.
  • the optimal equipment parameters can be determined based on such information by conventional knowledge and / or experiments.
  • the best parameters for the above equipment are: high-frequency power of the lower electrode 12 of the plasma processing apparatus 10, high-frequency power of the upper electrode 13, the distance between both electrodes 12, 13 and the temperature and processing of the lower electrode 12. It consists of equipment parameters that easily affect the plasma state, such as the pressure in the chamber 11, the etching gas flow rate, and the carrier gas flow rate. Accordingly, the processing conditions can be set by inputting the parameters of the apparatus into the plasma processing apparatus 10 via the input / output device 23.
  • a plurality of equipment parameters, each of which satisfies the expected structure of the device centered on the optimal equipment parameters, and the allowable fluctuation range of the detection data It is obtained by etching using a trial wafer W using a known experimental design method.
  • the permissible range of fluctuation can be efficiently obtained in consideration of the main effects and interaction of the parameters of the apparatus.
  • the parameters of each device were changed between maximum and minimum values and between them based on the experimental design method.
  • the plasma processing apparatus 10 is subject to continuous use, consumables such as focusing 19 are consumed, and plasma by-products are accumulated inside the processing chamber 11, and the characteristics of the apparatus change over time.
  • consumables such as focusing 19 are consumed, and plasma by-products are accumulated inside the processing chamber 11, and the characteristics of the apparatus change over time.
  • Fig. 2 conceptually shows the relationship between the equipment parameter group P for all the trial wafers W and the parameter sensor group for these equipment parameter groups P and the detection data group D for additional sensors.
  • the equipment parameter group P and the detection data group D include those for the test wafer W that satisfies the expected structure and those for the test wafer W that does not satisfy the expected structure. I have.
  • the allowable device parameters P1 and the permissible detection data group (variable permissible range group) D1 for the trial wafer W satisfying the expected structure are indicated by white portions, respectively, and the trial wafers not satisfying the expected structure are shown.
  • the device parameter group P 2 for W and the detection data group D 2 are indicated by shaded portions.
  • the control device 22 detects the detection data via the central control unit 22E. Only the permissible detection data group D1 is extracted from the detection data group D of the above and taken into the fluctuation permissible range group creation unit 22B.
  • the permissible detection data of each sensor is sorted from the maximum value to the minimum value in order of magnitude.
  • the variation allowable range group is stored and stored in the variation allowable range group storage section 22 C via the central control section 22E.
  • the comparison / judgment unit 22D functions during the actual process, and detects the detection data input from each sensor during the etching of the wafer W and the corresponding allowable detection taken from the fluctuation allowable range group storage unit 22C.
  • the data is constantly compared with the data D 1. If any of the detected data deviates from the allowable detection data D 1, an error signal is output to notify an etching error, and the control device 22 is used. To stop the process.
  • the detection data of the electrical measuring instruments 14B and 15B deviate from the allowable detection data D1. Value, and abnormality is instantaneously detected via this detection value. You can know. Further, apart from each allowable detection data, by setting a value close to these values within the range of the maximum value and the minimum value as the abnormal approach data value, one of the detection data reaches the abnormal approach data value. When an error occurs, it can be notified that the vehicle is approaching an abnormal state. In the actual process, an average value for each wafer W may be sequentially obtained from the detection data input into the control device 22 and the average value may be compared with the allowable variation range of the average value of the allowable variation group.
  • the plasma processing apparatus 10 is most suitable for the plasma processing apparatus 10 because the consumables are consumed due to continuous use and plasma by-products are deposited inside the processing chamber 11 and the characteristics of the apparatus change temporarily. Even if an appropriate operating parameter is set, the detection data of each sensor changes with time, and the detection data corresponding to the optimum driving parameter also changes. In the present embodiment, when the wafer W is etched with the optimum operation parameters, the monitoring of the detection data from each sensor and the above-described fluctuation allowable range group are constantly monitored, and the change of the device characteristics over time is known. be able to.
  • electrical signals such as voltage, current, phase, and impedance of the fundamental frequency and harmonics of the high-frequency power supplies 14 and 15 are detected through the electrical measuring instruments 14B and 15B, and the 1.
  • the flow rates of the etching gas and the carrier gas are respectively detected through the second gas flow sensors 18A and 18B, and the temperature of the lower electrode 12 is detected through the temperature sensor 20.
  • the gas pressure in the processing chamber 11 and the temperature of the upper electrode 13 are detected.
  • each detected data is within the permissible range. If each detection data (or average value data) is within the allowable range until the etching of the wafer W is completed, the processed wafer W has a device satisfying the expected structure. If the processing of the wafer W is continued and any one of the detected data reaches the abnormal approach data, the comparison / determination unit 22D determines that fact and outputs an abnormal approach signal to indicate an abnormal state. Alerts and warns that you are approaching.
  • the comparison / determination unit 22D outputs an abnormal signal, and the device at this time is in an abnormal state that does not satisfy the expected structure. Notify that there is.
  • the cause of the abnormality can be ascertained reliably, and the process conditions can be surely corrected.
  • the trial wafer W is etched using the plasma processing apparatus 10, and it is determined whether or not the processed trial wafer W satisfies the expected structure.
  • a fluctuation range group consisting only of the permissible detection data D1 of a plurality of parameter sensors and additional sensors is created, and the plasma processing apparatus 10 is monitored and controlled based on the fluctuation range group.
  • the allowable range of the parameter sensor and the additional sensor can be extended to the maximum and the operation rate can be increased by providing a wider range of operation of the device, and the process can be performed with high sensitivity to normal and abnormal processes. It can be reliably monitored and controlled.
  • the plurality of detection data detected in the actual process is compared with the permissible detection data D 1 of the variation allowable range group, respectively. It is possible to easily know whether or not an error has occurred during the detection of an error, and to correct the equipment parameters in a short time to recover the process conditions to a favorable state.
  • an abnormal approach data value within the fluctuation allowable range group it is notified that any of the detected data has approached an abnormal state, so that an abnormality can be predicted instantaneously.
  • at least one of the detection data of the plurality of parameter sensors and the additional sensor exceeds the limit value of the corresponding allowable detection data, an error is notified and the process is stopped. Plasma treatment The processing device 10 can be reliably stopped, and subsequent production of a defective device can be reliably prevented.
  • the detection data is obtained by using several kinds of parameter sensors and additional sensors.
  • the present invention is not limited to these sensors, and may be used for detecting a plasma state.
  • Sensors sensors for detecting plasma density and plasma temperature
  • RAA residual gas analyzers
  • detectors for suspended particles in plasma measuring instruments for radical species and density in plasma such as IR-LAS
  • a measuring device for measuring the thickness of the deposited film and the film type a temperature measuring device for measuring the wafer surface temperature, a process vessel temperature, and an electrode surface can be used.
  • the plasma processing apparatus 10 itself reports the process abnormality.
  • the plasma processing apparatus 10 reports the abnormality to the upper computer, and notifies the operator via the upper computer overnight. Anomalies can also be signaled.
  • the present invention it is possible to increase the operation rate by providing a wide range of operation of the apparatus, and it is possible to judge the normality or abnormality of the processing on the object to be processed with high sensitivity. It is possible to provide a monitoring method of a semiconductor manufacturing apparatus and a control method thereof, which can easily and surely correct a normal state even when there is an abnormality in processing of an object to be processed.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

Un procédé de commande/surveillance d'un appareil de production de semi-conducteurs comprend une étape de gravure d'une plaquette de test (W) au moyen d'un appareil (10) de traitement par plasma, une étape de décision dans laquelle il est décidé si la plaquette de test (W) traitée correspond à une structure escomptée, une étape de création d'un groupe de tolérance de fluctuation comprenant des données détectées provenant d'une pluralité de capteurs lorsque la structure attendue correspond en termes de données de détection de tolérance et une étape de surveillance/commande de l'appareil (10) de traitement par plasma effectuée en accord avec le groupe de tolérance de fluctuation.
PCT/JP2002/007858 2001-08-01 2002-08-01 Procede de surveillance d'un appareil de production de semi-conducteurs et procede de commande WO2003012847A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001233438A JP2003045846A (ja) 2001-08-01 2001-08-01 半導体製造装置の監視方法及びその制御方法
JP2001-233438 2001-08-01

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JP4920991B2 (ja) 2006-02-22 2012-04-18 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP4669849B2 (ja) * 2007-01-30 2011-04-13 みずほ情報総研株式会社 離散データ処理システム、離散データ処理方法及び離散データ処理プログラム
US9691618B2 (en) 2015-11-13 2017-06-27 Samsung Electronics Co., Ltd. Methods of fabricating semiconductor devices including performing an atomic layer etching process
JP6745643B2 (ja) * 2016-05-17 2020-08-26 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
HUP1900246A1 (hu) * 2019-07-05 2021-01-28 Univ Szegedi Eljárás és berendezés szikrakisülési részecskegenerátor monitorozására
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TW559974B (en) 2003-11-01

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