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WO2004051369A1 - Plaque pour photomasque et photomasque - Google Patents

Plaque pour photomasque et photomasque Download PDF

Info

Publication number
WO2004051369A1
WO2004051369A1 PCT/JP2003/015287 JP0315287W WO2004051369A1 WO 2004051369 A1 WO2004051369 A1 WO 2004051369A1 JP 0315287 W JP0315287 W JP 0315287W WO 2004051369 A1 WO2004051369 A1 WO 2004051369A1
Authority
WO
WIPO (PCT)
Prior art keywords
light
photomask
shielding film
substrate
blank
Prior art date
Application number
PCT/JP2003/015287
Other languages
English (en)
Japanese (ja)
Inventor
Ryu Ohtaguro
Original Assignee
Hoya Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corporation filed Critical Hoya Corporation
Priority to KR1020047012772A priority Critical patent/KR100779956B1/ko
Priority to JP2004556864A priority patent/JPWO2004051369A1/ja
Publication of WO2004051369A1 publication Critical patent/WO2004051369A1/fr

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/2026—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure for the removal of unwanted material, e.g. image or background correction

Definitions

  • the present invention relates to a photomask used for transferring a pattern in a lithography technique, and a photomask blank as an original material of the photomask.
  • the photomask is prepared by first precision-polishing quartz glass or the like to obtain a light-transmitting substrate (polishing step).
  • the main surface of the obtained light-transmitting substrate is subjected to sputtering or the like, for example, containing chromium as a main component.
  • a light-shielding film to be formed film formation step
  • apply a resist film on the formed light-shielding film coating step
  • selectively expose the applied resist film exposure step
  • develop the exposed resist film develop the exposed resist film.
  • the light shielding film is patterned by etching (etching step).
  • etching step an intermediate product of the photomask obtained through the above-described film forming process, that is, a material original plate is called a photomask blank.
  • the outer peripheral portion and the side portion of the light-transmitting substrate are gripped.
  • the light-shielding film is easily peeled off.
  • the peeled-off material adheres to the light-shielding film pattern as particles, defects such as a light-shielding film residue are generated in the pattern. Inevitably increase the number of washings of the blanks or blanks.
  • the above technique is not applied to a blank in which a fine mask pattern is formed using electron beam lithography in the exposure step. This is because, when a fine pattern is drawn, electron beam drawing is performed in the above-mentioned exposure step. However, when drawing a fine pattern using an electron beam, charge-up of the substrate by the electron beam is required. This is because, in order to prevent this, it is necessary to provide conductivity (set up a conductive pin) with a light-shielding film having conductivity even in the outer peripheral portion of the blank.
  • a finer pattern is required in accordance with a higher definition of the display device and the like.
  • electronic lithography is performed in the process.
  • Patent Document 1 Japanese Patent Application Laid-Open No. Sho 60-19444 (page 2, FIG. 1)
  • Patent Document 2 Japanese Patent Publication No. Hei 3-334500 (pages 2, 3; Figure 2) Disclosure of the Invention
  • the board is heavy (about lkg to 15 kg) when the board is held by hand when handling the board.
  • the side surfaces need to be rough due to the increased risk. Therefore, in a large photomask, the light-shielding film on the side surface is more easily peeled off.
  • an object of the present invention is to provide a technology capable of preventing generation of particles such as exfoliated matters when handling a blank in which a large and fine mask pattern is formed or a photomask manufactured using the blank.
  • a light-shielding film is formed only on a portion of the main surface of the light-transmitting substrate other than the peripheral edge, and the peripheral portion is an undeposited region of the light-shielding film.
  • a photomask blank is provided, wherein the size of the substrate is not less than 300 [mm] on one side, and the width of the undeposited region is not less than 3 [mm].
  • the light-shielding film is patterned using laser writing.
  • the surface roughness (R a) of the side surface of the translucent substrate is a rough surface of 0.05 to 0.3 m. It is effective for
  • FIG. 1 is a view schematically showing a photomask blank according to an embodiment, (a) is a plan view, and (b) is a cross-sectional view.
  • FIG. 2 is an enlarged view schematically showing a peripheral portion of the photomask blank according to the embodiment.
  • FIG. 1 shows a photomask blank according to an embodiment.
  • a light-shielding film 2 is formed only on a portion of the main surface of the light-transmitting substrate 1 other than a peripheral edge 1S, and the peripheral portion 1S is a region where the light-shielding film 2 is not formed. is there.
  • the translucent substrate 1 is a substrate that is substantially transparent to exposure light.
  • the translucent substrate 1 has a rectangular shape or a square shape in a plan view, and has a size of at least 300 [mm] on one side, that is, at least one of the four sides of the rectangular or square shape.
  • the two sides are more than 300 [mm].
  • each side is more than 300 M], that is, a rectangular or square shape is more effective for a photomask, even if the four sides are all larger than 300 [mm]. is there.
  • Such a large photomask is suitable for use, for example, in the manufacture of a liquid crystal display device or the like.
  • the size of the light-transmitting substrate 1 is 330 ⁇ 450 [mm], 390 ⁇ 610 [mm], 500 ⁇ 750 [mm], and 520 X 800 [mm] or more.
  • the thickness of the translucent substrate 1 is not particularly limited, but a high-precision mask substrate or a large-sized substrate requiring high flatness, such as the photomask of the present invention, tends to be thick. . In one embodiment, the thickness of the translucent substrate 1 is set to 5 to 15 [mm].
  • the width A (see FIG. 2) of the undeposited region 1S on the main surface of the translucent substrate 1 is 3 [mm] or more, and preferably 5 [mm]. Good. However, it is preferable that the width A of the undeposited region 1S is set to a value such that the undeposited region 1S does not overlap with a so-called drawing assurance region of a photomask manufactured using this blank. Specifically, when the drawing assurance area is an area excluding 10 [mm] from the peripheral end face of the translucent substrate 1, the width A of the undeposited area 1S is set to 10 [mm] or less. Is preferred.
  • the width A of the unformed region 1S is 5 ⁇ 1 [mm].
  • the light-shielding film 2 substantially shields the exposure light, and can be configured using, for example, a metal such as chrome.
  • the light-shielding film may have a multi-layer structure or a continuous layer structure including an anti-reflection layer, a semi-translucent layer, and the like.
  • This light-shielding film 2 is patterned using pattern drawing by a laser drawing device. That is, this photomask blank is for laser writing.
  • the translucent substrate 1 having a horizontal diameter of 300 mm or more in a plan view is obtained.
  • the side surface (the end surface ⁇ and the chamfered portion 1C) of the translucent substrate 1 does not need to be precisely polished, and may be rough (see FIG. 2). Even if the end face 1T and the chamfered portion 1C are rough, since the light-shielding film 2 is not formed on these portions, there is no problem that the light-shielding film 2 peels off and adheres to the mask pattern surface.
  • the side surface of the substrate is preferably a rough surface having a surface roughness (R a) of 0.05 m or more, more preferably 0.15 m or more. l jLi m or more, most preferably Q.15 im or more. Further, if the side surface of the substrate is too rough, there is a problem that particles potentially embedded in the grooves are generated during cleaning or the like. Considering this point, the side surface of the substrate, particularly the end face, preferably has a surface roughness (R a) of 0.3 m or less, more preferably 0.25 m or less, and most preferably 0.2 m or less. It is as follows.
  • a side portion having a surface roughness (R a) of 0.05 to 0.3 m it can be performed by controlling a polishing method.
  • a diamond tool (a diamond particle having a predetermined roughness can be obtained). It can be obtained by polishing using a diamond tool with a grain size of # 700 to # 240 in an embedded wheel-shaped grinding wheel).
  • the width B of the chamfer 1C (see Fig. 2) is, for example, 0.3 [i! ] To 1.3 [mm].
  • the light-shielding film 2 is formed only on the main surface of the obtained light-transmitting substrate 1 except for the peripheral portion 1S.
  • the peripheral portion is a region including the above-described end surface 1T and chamfered portion 1C.
  • the light shielding film 2 can be formed by sputtering. Sputtering may be performed in a state where the non-film-forming region 1S is masked by a frame-shaped holder (not shown) and the light-transmitting substrate 1 is held. This allows Since the sputter target particles do not adhere to the area masked by the frame-shaped holder on the main surface of the translucent substrate 1, that area can be used as the unfilmed area 1S. At this time, by holding the translucent substrate 1 so that the film formation surface (main surface) faces downward, the problem of particles adhering to the film formation surface can be reduced.
  • the frame-shaped holder can be grounded at the time of sputtering film formation, thereby preventing abnormal discharge.
  • the width A of the undeposited region 1S is set to 3 mm or more
  • the width of the frame-shaped holder can be set to 3 mm or more correspondingly. Therefore, sufficient grounding can be ensured during the spattering, so that abnormal discharge can be reliably avoided, and as a result, the yield can be improved.
  • the register used here is a register for laser writing, and specifically, NPR3510PG manufactured by Nagase & Co., Ltd. is exemplified.
  • the applied resist film is backed, it is selectively exposed by laser drawing.
  • the laser drawing does not need to be performed in a vacuum unlike the electron beam drawing, and can be performed in the atmosphere, so that there is an advantage that a large-scale apparatus is not required.
  • the laser drawing apparatus used here specifically, LRS manufactured by MICRONIC or the like can be mentioned.
  • the exposed resist film is developed to form a resist pattern, and the light-shielding film 2 is etched using the resist pattern as a mask. Then, a light-shielding film pattern is formed. Then, the resist pattern is removed, and thereafter, predetermined cleaning is performed to complete the photomask according to the embodiment.
  • the photomask blank according to the embodiment is used for laser writing, it is possible to avoid the problem of charge-up in conventional electron beam writing, so that the size is 300 mm or more on one side. Even though it is large, there is no problem even if the width A of the undeposited area 1 S is 3 [mm] or more.
  • photomasks Large photomask blanks or photomasks (hereinafter referred to as photomasks, etc.) are also heavy, so they must be firmly held during transportation, etc.
  • photomasks By setting the width A of the area 1S to 3 [mm] or more, even if the photomask or the like is conveyed in a state where the end face 1T and the chamfered portion 11C are gripped by hand or the like. It is possible to reliably prevent humans or the like from contacting the light shielding film 2. Therefore, the problem of peeling of the light shielding film 2 can be reliably prevented.
  • the photomasks and the like of the present invention are those in which the mask pattern is particularly fine and strict defect inspections are performed. For example, it is suitable for use as a mask for manufacturing a TFT (thin film transistor).
  • a rectangular substrate is illustrated as the translucent substrate 1, but the translucent substrate may be a square.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

La génération de particules est empêchée dans la manipulation d'une plaque pour laquelle un dessin grand et précis est exigé. L'invention concerne une plaque pour photomasque, qui comprend un film de protection contre la lumière (2) formé uniquement sur les zones autres que le bord périphérique (IS) situées sur la surface principale d'un substrat perméable à la lumière (1), le bord périphérique (IS) étant la zone non formée par le masque du film de protection contre la lumière (2). La plaque pour photomasque se caractérise en ce que le substrat perméable à la lumière (1) est d'au moins 300 millimètres de chaque côté, et la largeur de la zone non formée par le film (S) est d'au moins 3 millimètres. Elle se caractérise aussi en ce que le film de protection contre la lumière (2) est dessiné par peinture au laser.
PCT/JP2003/015287 2002-12-03 2003-11-28 Plaque pour photomasque et photomasque WO2004051369A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020047012772A KR100779956B1 (ko) 2002-12-03 2003-11-28 포토마스크 블랭크 및 포토마스크 제조방법
JP2004556864A JPWO2004051369A1 (ja) 2002-12-03 2003-11-28 フォトマスクブランク、及びフォトマスク

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002-350838 2002-12-03
JP2002350838 2002-12-03

Publications (1)

Publication Number Publication Date
WO2004051369A1 true WO2004051369A1 (fr) 2004-06-17

Family

ID=32463124

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2003/015287 WO2004051369A1 (fr) 2002-12-03 2003-11-28 Plaque pour photomasque et photomasque

Country Status (5)

Country Link
JP (1) JPWO2004051369A1 (fr)
KR (1) KR100779956B1 (fr)
CN (1) CN100580549C (fr)
TW (1) TWI226971B (fr)
WO (1) WO2004051369A1 (fr)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007334316A (ja) * 2006-05-15 2007-12-27 Hoya Corp マスクブランク及びフォトマスク
JP2008083194A (ja) * 2006-09-26 2008-04-10 Hoya Corp フォトマスクブランク、フォトマスクブランクの製造方法、フォトマスク、フォトマスクの製造方法、フォトマスク中間体及びパターンの転写方法
JP2008257132A (ja) * 2007-04-09 2008-10-23 Hoya Corp フォトマスクブランク用基板及びその製造方法、フォトマスクブランク、並びにフォトマスク
JP2008257131A (ja) * 2007-04-09 2008-10-23 Hoya Corp フォトマスクブランク用基板及びその製造方法、フォトマスクブランク、並びにフォトマスク
JP2009058950A (ja) * 2007-08-07 2009-03-19 Hoya Corp マスクブランク用基板の製造方法、マスクブランクの製造方法、マスクの製造方法、及びマスクブランク用基板
JP2010107613A (ja) * 2008-10-29 2010-05-13 Tosoh Corp フォトマスク用基板およびその製造方法
WO2010092937A1 (fr) * 2009-02-13 2010-08-19 Hoya株式会社 Substrat pour utilisation d'ébauche de masque, ébauche de masque et masque photographique
JP2011070214A (ja) * 2005-03-30 2011-04-07 Hoya Corp マスクブランクス用ガラス基板の製造方法、マスクブランクスの製造方法、マスクブランクス用ガラス基板、及びマスクブランクス
JP2016170320A (ja) * 2015-03-13 2016-09-23 信越化学工業株式会社 マスクブランクス及びその製造方法
JP2020003547A (ja) * 2018-06-26 2020-01-09 クアーズテック株式会社 フォトマスク用基板およびその製造方法
US20230097280A1 (en) * 2020-03-19 2023-03-30 Hoya Corporation Mask blank, transfer mask, and method for manufacturing semiconductor device

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8187748B2 (en) 2004-12-24 2012-05-29 Panasonic Corporation Non-aqueous electrolyte secondary battery
WO2006068143A1 (fr) 2004-12-24 2006-06-29 Matsushita Electric Industrial Co., Ltd. Batterie rechargeable a electrolyte non aqueux
JP5412107B2 (ja) * 2006-02-28 2014-02-12 Ｈｏｙａ株式会社 フォトマスクブランクの製造方法、及びフォトマスクの製造方法
JP2008151916A (ja) * 2006-12-15 2008-07-03 Shin Etsu Chem Co Ltd 大型フォトマスク基板のリサイクル方法

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JPS593437A (ja) * 1982-06-30 1984-01-10 Fujitsu Ltd 半導体装置製造用基板
JPS59172647A (ja) * 1983-03-22 1984-09-29 Nec Corp マスクプレ−トの製造方法
JPS6029747A (ja) * 1983-07-28 1985-02-15 Hoya Corp 電子デバイス用マスク基板
JPS6039047U (ja) * 1983-08-24 1985-03-18 凸版印刷株式会社 マスクブランク板
JPH03110438U (fr) * 1990-02-28 1991-11-13
JPH05217831A (ja) * 1992-02-05 1993-08-27 Seiko Epson Corp レーザー描画装置

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JPS593437U (ja) 1982-06-29 1984-01-10 アルプス電気株式会社 押釦スイツチ
US5415953A (en) * 1994-02-14 1995-05-16 E. I. Du Pont De Nemours And Company Photomask blanks comprising transmissive embedded phase shifter

Patent Citations (6)

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Publication number Priority date Publication date Assignee Title
JPS593437A (ja) * 1982-06-30 1984-01-10 Fujitsu Ltd 半導体装置製造用基板
JPS59172647A (ja) * 1983-03-22 1984-09-29 Nec Corp マスクプレ−トの製造方法
JPS6029747A (ja) * 1983-07-28 1985-02-15 Hoya Corp 電子デバイス用マスク基板
JPS6039047U (ja) * 1983-08-24 1985-03-18 凸版印刷株式会社 マスクブランク板
JPH03110438U (fr) * 1990-02-28 1991-11-13
JPH05217831A (ja) * 1992-02-05 1993-08-27 Seiko Epson Corp レーザー描画装置

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011070214A (ja) * 2005-03-30 2011-04-07 Hoya Corp マスクブランクス用ガラス基板の製造方法、マスクブランクスの製造方法、マスクブランクス用ガラス基板、及びマスクブランクス
JP2012190044A (ja) * 2005-03-30 2012-10-04 Hoya Corp マスクブランクスおよびマスクブランクスの製造方法
JP2007334316A (ja) * 2006-05-15 2007-12-27 Hoya Corp マスクブランク及びフォトマスク
JP2008083194A (ja) * 2006-09-26 2008-04-10 Hoya Corp フォトマスクブランク、フォトマスクブランクの製造方法、フォトマスク、フォトマスクの製造方法、フォトマスク中間体及びパターンの転写方法
TWI422960B (zh) * 2006-09-26 2014-01-11 Hoya Corp Mask substrate and manufacturing method thereof, mask and manufacturing method thereof, mask mask, and pattern transfer method
JP2008257131A (ja) * 2007-04-09 2008-10-23 Hoya Corp フォトマスクブランク用基板及びその製造方法、フォトマスクブランク、並びにフォトマスク
JP2008257132A (ja) * 2007-04-09 2008-10-23 Hoya Corp フォトマスクブランク用基板及びその製造方法、フォトマスクブランク、並びにフォトマスク
JP2009058950A (ja) * 2007-08-07 2009-03-19 Hoya Corp マスクブランク用基板の製造方法、マスクブランクの製造方法、マスクの製造方法、及びマスクブランク用基板
JP2010107613A (ja) * 2008-10-29 2010-05-13 Tosoh Corp フォトマスク用基板およびその製造方法
WO2010092937A1 (fr) * 2009-02-13 2010-08-19 Hoya株式会社 Substrat pour utilisation d'ébauche de masque, ébauche de masque et masque photographique
JP4839411B2 (ja) * 2009-02-13 2011-12-21 Ｈｏｙａ株式会社 マスクブランク用基板、マスクブランクおよびフォトマスク
JP2016170320A (ja) * 2015-03-13 2016-09-23 信越化学工業株式会社 マスクブランクス及びその製造方法
US10488750B2 (en) 2015-03-13 2019-11-26 Shin-Etsu Chemical Co., Ltd. Mask blank and making method
JP2020003547A (ja) * 2018-06-26 2020-01-09 クアーズテック株式会社 フォトマスク用基板およびその製造方法
US20230097280A1 (en) * 2020-03-19 2023-03-30 Hoya Corporation Mask blank, transfer mask, and method for manufacturing semiconductor device

Also Published As

Publication number Publication date
CN100580549C (zh) 2010-01-13
TWI226971B (en) 2005-01-21
CN1692312A (zh) 2005-11-02
KR20040091058A (ko) 2004-10-27
KR100779956B1 (ko) 2007-11-28
JPWO2004051369A1 (ja) 2006-04-06
TW200422771A (en) 2004-11-01

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