[go: up one dir, main page]

WO2006049037A1 - Procédé de correction de condition d’exposition, équipement de traitement de substrat et programme informatique - Google Patents

Procédé de correction de condition d’exposition, équipement de traitement de substrat et programme informatique Download PDF

Info

Publication number
WO2006049037A1
WO2006049037A1 PCT/JP2005/019563 JP2005019563W WO2006049037A1 WO 2006049037 A1 WO2006049037 A1 WO 2006049037A1 JP 2005019563 W JP2005019563 W JP 2005019563W WO 2006049037 A1 WO2006049037 A1 WO 2006049037A1
Authority
WO
WIPO (PCT)
Prior art keywords
exposure
substrate
control unit
focus value
pattern
Prior art date
Application number
PCT/JP2005/019563
Other languages
English (en)
Japanese (ja)
Inventor
Kazuo Sawai
Akihiro Sonoda
Original Assignee
Tokyo Electron Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Limited filed Critical Tokyo Electron Limited
Publication of WO2006049037A1 publication Critical patent/WO2006049037A1/fr

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70641—Focus

Definitions

  • Exposure condition correction method for Exposure condition correction method, substrate processing apparatus, and computer program
  • the present invention relates to an exposure condition correction method capable of optimally setting an exposure condition when exposing a resist film formed on a semiconductor wafer or a flat panel display (FPD) substrate, and the exposure condition correction method
  • the present invention relates to a substrate processing apparatus for carrying out the above and a computer program for executing the exposure condition correction method.
  • a resist solution is applied to the wafer surface to form a resist film, and the resist film is exposed to a predetermined pattern and developed. Thus, a pattern is formed on the resist film.
  • the resist pattern line width and LER Line Edge Roughness
  • SEM is generally used for measuring the line width and the like of such a resist pattern.
  • SEM observation has the advantage that the resist pattern can be viewed directly, it takes a long time for measurement, experience is required for device operation and shape observation, and observer's subjectivity is easy to enter.
  • There are disadvantages such as difficulty in maintaining the reliability of line width due to LER. Therefore, in recent years, instead of SEM, a method using a skitterometry technique has come to be used! /
  • Sky telometry technology is to calculate the diffracted light intensity distribution for an arbitrary pattern shape, for example, to create a library in advance and to enter the light into the measurement target, and to measure the diffracted light intensity.
  • An angular direction distribution is detected, and the width, height, etc. of the pattern to be measured are estimated by pattern matching between the detection result and the above-mentioned library.
  • Patent Document 1 describes that it is possible to control the exposure time and the exposure amount based on the measurement results obtained by the above-described sky telometry. There is no specific method for correcting this.
  • Patent Document 1 JP 2002-260994 A
  • An object of the present invention is to provide an exposure condition correction method capable of setting an optimal exposure condition in an exposure apparatus from a resist pattern shape measurement result without causing an artificial mistake. .
  • Another object of the present invention is to provide a substrate processing apparatus and a computer program for executing this exposure condition correction method.
  • a resist film is formed on a substrate, a plurality of portions of the resist film are sequentially exposed with different exposure parameters in the same pattern, and after the exposure
  • the relationship between the development of the substrate, the shape of the resist pattern formed by the development using the skier telometry technique, and the shape data measured by the skier telometry technique and the exposure parameters used There is provided an exposure condition correction method comprising: determining an optimum exposure parameter; and correcting an exposure condition so that a subsequent substrate is exposed with the optimum exposure parameter.
  • a resist film forming unit that forms a resist film on a substrate, an exposure processing unit that exposes the resist film formed on the substrate in a predetermined pattern, and an exposure processing
  • the development processing section that develops the developed substrate and the shape of the developed resist pattern
  • a pattern shape measuring unit for measuring by a measurement technique, a first control unit for controlling the resist film forming unit, the development processing unit, and the pattern shape measuring unit; a second control unit for controlling the exposure processing unit;
  • a resist film is formed on the substrate, and multiple portions of the resist film are successively exposed while changing the exposure parameters in the same pattern, developed, and the shape of the formed resist pattern is measured by the skiterometry technique.
  • the relationship between the measured shape data and the exposure parameters used The optimum exposure parameters are determined and exposure is determined with the optimum exposure parameters determined for the subsequent substrates.
  • a substrate processing apparatus that performs control to correct exposure conditions so that light is emitted.
  • a coating film forming unit that forms a resist film on a substrate, an exposure processing unit that exposes the resist film formed on the substrate in a predetermined pattern, and an exposure process Forming a resist film on a substrate using a substrate processing apparatus having a development processing unit that develops the substrate and a pattern shape measurement unit that measures shape data of the developed resist pattern by a skitometry technique; Sequential exposure of multiple parts of the resist film using the same pattern with different exposure parameters, development of the exposed substrate, and measurement of the shape of the resist pattern formed by development using the scan telometry technique Determining the optimum exposure parameter from the relationship between the measured shape data and the exposure parameter used, and determining the optimum exposure pattern for subsequent substrates.
  • the computer program including software for the cause substrate processing apparatus control is control in a computer is provided.
  • the exposure amount and the focus value can be used as exposure parameters to be corrected in the exposure process, and the optimum focus value can be obtained by changing the focus value while keeping the exposure amount constant. It is possible to obtain the optimum exposure value and the optimum focus value by changing the exposure amount and the focus value, respectively.
  • the resist pattern shape measurement using the skier telometry technology irradiates light of a predetermined wavelength to a plurality of points having a predetermined positional relationship within one shot area of exposure on the substrate, and spectral reflection is performed at each point.
  • the spectrum is measured, and the obtained spectral reflection spectrum is calculated in advance. It is preferable to obtain the line width of the resist pattern at that point by collating with the library configured by comparing the created spectral reflection spectrum and the line width of the resist pattern.
  • a plurality of parts are exposed with the same pattern while changing the exposure parameters, and the shape of the resist pattern formed by the present image is measured by the skier telometry technique. Relationship with parameters Since the optimum exposure parameters are determined and the exposure conditions are corrected, it is not necessary to intervene manually for shape measurement or input to the exposure equipment. For this reason, it is possible to prevent human error from intervening in the correction of exposure conditions. In addition, since the correction conditions can be calculated in a short time by using the sky telometry technique, the exposure conditions can be checked more frequently than in the past. As a result, resist patterns can be formed with high accuracy, and product quality can be maintained at a high level.
  • the above-described technique for constructing a library by comparing the spectral reflection spectrum prepared in advance with the line width of the resist pattern and collating the spectral reflection spectrum with the library for example, exposure amount Is applied to the method to find the optimum focus value by changing the focus value, and the relationship between the obtained line width on the Y-axis and the focus value used on the X-axis.
  • the line width value is a curve having a maximum value or a minimum value, for example, the average of the focus values giving the maximum value or the minimum value at each point can be set as the optimum focus value.
  • Such calculation is automatically performed by a computer, and the calculated optimum focus value is directly transferred from the computer to the exposure apparatus so that the control unit corrects the exposure condition in the exposure apparatus. be able to.
  • FIG. 1 is a plan view showing a schematic configuration of a resist coating / development processing system.
  • FIG. 2 is a front view showing a schematic configuration of a resist coating / development processing system.
  • FIG. 3 is a rear view showing a schematic configuration of a resist coating / developing system.
  • FIG. 4 is a diagram showing a control system for a resist coating / developing system and an exposure apparatus.
  • FIG. 6 is a diagram showing exposure area setting forms and exposure order on a wafer.
  • FIG. 7 is a diagram showing a setting example of line width measurement points in an exposure area.
  • FIG. 8 is a graph showing the relationship between the line width of the resist pattern and the focus value.
  • FIG. 9 is a diagram showing a setting form of an exposure area, an exposure value, and a focus value on a wafer.
  • FIG. 10 is a graph showing the relationship between the line width and the focus value for each exposure amount.
  • FIG. 11 is a diagram showing resist pattern parameters that can be measured by the skier telometry technique.
  • FIG. 1 is a plan view showing a schematic configuration of a resist coating Z development processing system 1 for forming a resist film and developing a substrate after exposure
  • FIG. 2 is a front view thereof
  • FIG. FIG. FIG. 1 shows a configuration in which the resist coating Z development processing system 1 and the exposure apparatus 14 are combined.
  • This resist coating Z development processing system 1 includes a cassette station 11 as a transfer station, a processing station 12 having a plurality of processing units, an exposure apparatus 14 and a processing station 12 provided adjacent to the processing station 12. And an interface station 13 for transferring the wafer W to and from the terminal.
  • a wafer cassette (CR) containing a plurality of (for example, 25) wafers W is loaded and unloaded.
  • a plurality (five in FIG. 1) of positioning protrusions 20a for mounting a wafer cassette (CR) are provided in one row along the X direction.
  • the wafer cassette (CR) is placed with the wafer loading / unloading port facing the processing station 12 side.
  • the cassette station 11 includes a wafer transfer mechanism 21 having a wafer transfer pick 21a.
  • the pick 21a for wafer transfer can selectively access any one of the wafer cassettes (CR), and a transition unit (TRS-G) provided in the third processing unit group G of the processing station 12 described later. ) Can be accessed.
  • CR wafer cassettes
  • TRS-G transition unit
  • the processing station 12 has a third processing unit group G, a fourth processing unit group G, and a fifth processing unit group G in order from the cassette station 11 side on the rear side of the system (upper side in FIG. 1). I have.
  • the first main transport unit is disposed between the third processing unit group G and the fourth processing unit group G.
  • the second main transport unit is disposed between the fourth processing unit group G and the fifth processing unit group G.
  • a first processing unit group G and a second processing unit group G are provided.
  • a high temperature heat treatment unit (BA
  • CPL-G high-precision temperature control unit
  • a transition unit (TRS-G) serving as a wafer W transfer unit between the cassette station 11 and the first main transfer unit A1 is stacked in, for example, 10 stages.
  • the fourth processing unit group G for example, a heat treatment is performed on the wafer W after resist application.
  • a pre-beta unit (PAB), a post-bake unit (POST) that heat-processes the developed wafer W, and a high-precision temperature control unit (CPL-G), for example, are stacked in 10 steps.
  • heat treatment is performed on the wafer W after exposure and before development.
  • PEB Post-exposure bake unit
  • CPL-G high-precision temperature control unit
  • a sixth processing unit group G having an adhesion unit (AD) and a heating unit (HP) for heating the wafer W is provided.
  • a peripheral exposure device that selectively exposes the edge of the wafer W (
  • WEE line width measuring device
  • ODP line width measuring device
  • FTI film thickness measuring device
  • first processing unit group G three resist coating units (COT) for forming a resist film and a bottom coating unit (BARC) for forming an antireflection film are stacked in a total of five stages.
  • COT resist coating units
  • BARC bottom coating unit
  • CP indicates a coater cup
  • SP spin chuck
  • DEV development units
  • a first main wafer transfer unit 16 is provided in the first main transfer unit A.
  • the first main wafer transfer device 16 includes three arms for holding the wafer W. These arms rotate integrally around the Z axis, move up and down in the Z axis direction, and separately in the horizontal direction. Stretchable (in the XY plane). As a result, the first main wafer transfer device 16 is connected to the first processing unit group G and the third processing unit. Selectable for each of the physical unit group G, the fourth processing unit group G, and the sixth processing unit group G
  • the second main transfer unit A has the same configuration as the first main wafer transfer unit 16.
  • a second main wafer transfer device 17 having a structure is provided.
  • the second main wafer transfer device 17 includes a second processing unit group G, a fourth processing unit group G, a fifth processing unit group G, and a seventh processing unit.
  • Each unit of the knit group G can be selectively accessed.
  • a first control unit 31 that controls the resist coating Z development processing system 1 as a whole is provided below the cassette station 11.
  • the rear panel and the first processing unit group G to the seventh processing unit group G of the processing station 12 can be removed for maintenance.
  • the interface station 13 includes a first interface station 13a on the processing station 12 side and a second interface station 13b on the exposure apparatus 14 side.
  • the first interface station 13a has an opening for the fifth processing unit group G.
  • a first wafer carrier 18 is arranged so as to face 5, and a second wafer carrier 19 which is movable in the X direction is arranged at the second interface station 13 b.
  • the upper force is also in order, with a transition unit (TRS-G) and two stages of high-precision temperature control
  • a ninth processing unit group G is provided, in which stacks (CPL-G) are stacked.
  • the first wafer transfer body 18 has a fork 18a for wafer transfer.
  • This four 18a includes the fifth processing unit group G, the eighth processing unit group G, and the ninth processing unit group G.
  • the second wafer transport body 19 has a fork 19a for wafer transfer.
  • the fork 19a includes the units of the ninth processing unit group G, the in-stage 14a and the out-stay of the exposure apparatus 14.
  • the instage 14a of the exposure apparatus 14 is capable of carrying in the wafer W with a lamp isometric force indicating that Z is not possible.
  • the outstage 14b is provided with a lamp or the like indicating that the wafer W can be unloaded and Z is not possible.
  • the interface station 13b is provided with a sensor for recognizing the display state of these lamps.
  • the fork 19a holding the wafer W carries the wafer W into the in-stage 14a according to the recognition result of this sensor, and the empty fork 19a is configured to access the outstage 14b and carry out the wafer W according to the recognition result of the sensor.
  • One wafer W taken out from (CR) is transferred to, for example, the transition unit (TRS-G) of the processing station 12, and temperature control and adhesion control in the temperature control unit (TCP) are performed.
  • TRS-G transition unit
  • TCP temperature control unit
  • Adhesion treatment in knit formation of anti-reflection film in bottom coating unit (BARC), heat treatment in heating unit (HP), beta treatment in high temperature heat treatment unit (BAKE), high precision temperature control unit ( Temperature control with CPL-G), resist coating tool
  • the resist solution is applied to the exposure apparatus 14 after undergoing a resist solution coating process at the COT, a pre-beta process at the pre-beta unit (PAB), and a peripheral exposure process at the peripheral exposure apparatus (WEE). Then, the wafer W is exposed to the transition unit (TRS-G) after exposure by the exposure apparatus 14.
  • PEB post-exposure bake processing in post-exposure beta unit
  • DEV development processing in development unit
  • POST post-beta processing in post-beta unit
  • CR wafer cassette
  • the resist coating Z development processing system 1 is controlled by the first control unit 31, and the exposure apparatus 14 is controlled by the second control unit 32.
  • the first control unit 31 includes a first process controller (CPU) 35 and a process manager who applies resist coating.
  • a keyboard that performs command input operations to manage the fabric / development processing system 1 is applied to the keyboard.
  • Z The first data input / output unit 36 having a display that visualizes and displays the operation status of the development processing system 1, and the registered Recipe 38b, which is data for executing the control program 38a and control program 38a for executing each processing condition executed in the coating Z development processing system 1 under the control of the first process controller (CPU) 35
  • An analysis program 39a for analyzing the spectral reflection spectrum measured by the line width measuring device (ODP), and a first recording unit 37 in which a library (database) 39b is recorded.
  • the library 39b is a database in which the diffracted light intensity distribution is obtained by computer simulation for an arbitrary pattern shape, and the spectral reflection spectrum and the resist pattern shape are linked.
  • the data recorded in this library 39b was obtained by actually patterning a resist film under specified conditions, measuring the spectral reflection spectrum of the pattern, confirming the shape by SEM observation, and improving reliability. Is preferred. However, this applies only to line widths that can be observed well with SEM observation.
  • FIG. 4 illustrates a part of the processing units and the like controlled by the first control unit 31, and all the control targets are illustrated.
  • the second control unit 32 visualizes the operating status of the second process controller (CPU) 41, the keyboard on which the process manager performs command input operations to manage the exposure apparatus 14 and the exposure apparatus 14.
  • Drive unit in the exposure apparatus 14 from the second process controller (CPU) 41 (for example, a mechanism for adjusting the position of the wafer W or the lens position for adjusting the focus, a mechanism for adjusting the amount of light, etc.) ) Is sent to the control signal.
  • a bidirectional communication power interface 33 for data related to the exposure process is provided between the first control unit 31 and the second control unit 32. Is going to be done through. This will be described in detail later.
  • a dummy wafer is used to form a resist film, perform exposure with a test pattern, and develop the wafer. Then, measure the line width (CD) of the developed pattern to confirm the exposure conditions. If the exposure conditions are judged to be inappropriate, correct the exposure conditions.
  • a method for correcting the exposure conditions of the exposure apparatus 14 by the resist coating / development processing system 1 and the exposure apparatus 14 will be described.
  • FIG. 5 shows a flowchart of a method for correcting the focus value as another exposure parameter while fixing the exposure amount as one of the exposure parameters.
  • a resist film is formed on the surface of the dummy wafer W (Step 1).
  • the dummy weno, W should be as uniform as possible and have a high degree of flatness. This is because if the surface of the dummy wafer W itself has irregularities, or if the thickness is uneven and the surface is inclined, the exact exposure conditions cannot be determined.
  • the exposure dose is determined under the conditions that have the least manufacturing margin at the production site, for example, the exposure dose that can form 65 nmLZS (hereinafter referred to as ⁇ exposure dose E '').
  • the focus value is set for manufacturing the product !, and the focus value (hereinafter referred to as “focus value F”) is set to be vertical and horizontal as shown in FIG. 6, for example.
  • the focus value is F within the range of ⁇ 0.5 m.
  • the area of the exposure area S is preferably matched to the maximum field size of the exposure device 14.
  • step 3 the wafer W that has been exposed in this way is developed (step 3).
  • step 4 a pattern is formed on the resist film, and the line width of this resist pattern is measured using a line width measuring device (ODP) (step 4).
  • the line width measurement in this line width measuring device (ODP) is generally performed as follows. First, as shown in FIG. 7, a plurality of measurement points within one exposure area S, for example, a total of 5 points (P
  • Such spectral reflection spectrum measurement and line width determination are performed for each exposure area s.
  • the first control unit 31 is used when the line width of the resist pattern of the points P to P set in each exposure area S and each exposure area S are exposed using the analysis program 39a.
  • Step 5 finds the relationship with the single value (Step 5). This gives the graph shown in FIG. For this step 5, it is sent from the second controller 32 of the exposure apparatus 14 to the first controller 31 via the exposure condition force S interface 33 in each exposure area S.
  • the exposed portion of the resist film dissolves during development, and therefore, when the focus value is not appropriate, the exposed range is widened, thereby increasing the groove width. As it becomes wider, the line width becomes narrower. Therefore, as shown in FIG. 8, for each of the points P to P, a curve is drawn in which the line width is maximum at a portion where the focus value is appropriate.
  • the first control unit 31 is a force that gives the maximum value of a total of five curves obtained at points P to P.
  • the average value of the minimum and maximum focus values F and F is determined as the optimum focus value F.
  • the average value may be determined as the optimum focus value F.
  • step 7 It is determined whether or not the value f satisfies a force force that is equal to or smaller than a preset allowable value ⁇ , that is, f ⁇ (step 7). If f ⁇ ⁇ is satisfied, the focus value is not corrected, and exposure processing of the wafer W as a product is started without changing F (step 8).
  • the absolute value f of the difference of 1 ⁇ 0 is a dummy weno whose value is greater than the allowable value ⁇ .Warning value that is estimated to be abnormal in a series of processing of W. Meet
  • the exposure apparatus 14 is corrected so that the focus value is the focus value F (step 10).
  • Exposure equipment The focus value correction in 14 is directly transmitted from the first control unit 31 to the second control unit 32 via the focus value correction signal force s interface 33, and the second control unit 32 determines the exposure apparatus based on this correction signal. Correct the exposure conditions in step 14.
  • the focus value is corrected in the exposure apparatus 14, the exposure processing of the wafer W as the product in step 8 is started.
  • An alarm for example, sound, light, display on the first data input / output unit 36, etc.
  • the process manager inspects the resist coating / development processing system 1 and the exposure device 14 (step 12) . ⁇ After the system abnormality is resolved, the optimum focus value from step 1 is again checked. In order to decide, the processing of the dummy wafer W is started.
  • the process manager determines the focus value of each exposure area.
  • the power of the exposure device was read and the data was input to the resist coating and development system, and the optimum focus value obtained as a result was read and input to the exposure device. For this reason, input errors such as reverse input of positive and negative signs and misalignment of the decimal point occur in data input work, etc., and the exposure apparatus is not properly corrected, resulting in product defects.
  • the above-mentioned problems can be prevented by correcting the exposure conditions by directly transmitting / receiving data on the exposure conditions between the resist coating / developing system 1 and the exposure apparatus 14. As a result, product defects can be prevented.
  • the force exposure amount and the focus value that are corrected only for the focus value can be set as correction targets.
  • a resist film is formed on the surface of the dummy wafer W with a uniform thickness and high flatness, and this resist film is sequentially exposed by changing an exposure amount and a focus value with a test pattern.
  • the dummy wafer W is provided with an exposure area S divided vertically and horizontally, and the horizontal direction.
  • the exposure amount E set for product manufacture as the center for example, the exposure amount E
  • the focus value is changed in the range of the residue values F to F.
  • the wafer W that has been exposed is developed.
  • a pattern is formed on the resist film.
  • the line width of the resist pattern at the center of each exposure area is measured according to the measurement method described above using the line width measuring device (ODP), and the exposure is performed.
  • ODP line width measuring device
  • the relationship between the line width and the focus value is obtained for each amount E_ to E. This makes the graph shown in Figure 10
  • curves E to E correspond to exposure amounts E to E, respectively.
  • each curve becomes a jagged line, so it is difficult to determine the maximum and minimum values of each curve. It becomes difficult to determine the optimum focus value.
  • LER has almost no sensitivity and is not affected by it, and a high-accuracy smooth graph such as that shown in FIG. 10 can be obtained. Makes decisions easier.
  • the difference f between the optimum focus value F and the focus value F determined in this way is the range of the tolerance ⁇ .
  • the second control unit 32 corrects the focus value of the exposure apparatus 14 to the optimum focus value F based on this correction signal, and the optimum focus value. Difference between F and focus value F is from warning range ⁇
  • the first control unit 31 issues an alarm.
  • the optimum exposure amount ⁇ is not the initial set exposure value ⁇ , the exposure is performed from the first control unit 31 to the second control unit 32.
  • the correction signal force of the value is transmitted directly via the S interface 33, and the second control unit 32 Based on the positive signal, the exposure condition in the exposure apparatus 14 is corrected.
  • the exposure dose is not corrected.
  • the line width of the resist pattern is an index for correcting the exposure amount and the focus value as exposure parameters
  • the line width of the resist pattern is an index for correcting the exposure amount and the focus value as exposure parameters
  • the line width of the resist pattern is an index for correcting the exposure amount and the focus value as exposure parameters
  • the line width of the resist pattern is an index for correcting the exposure amount and the focus value as exposure parameters
  • the line width of the resist pattern is an index for correcting the exposure amount and the focus value as exposure parameters
  • the line width of the resist pattern is an index for correcting the exposure amount and the focus value as exposure parameters
  • FIG. not only the line width (CD) but also the bottom width (C), tilt angle ⁇ , and resist film thickness (D) of the resist pattern can be measured.
  • a certain line width (CD) Determine the range of the focus value to be obtained, and then sequentially select the focus value range in which the inclination angle ⁇ is good, select the center value of the focus value among them, and finalize it.
  • the optimum focus value F
  • the tilt state of the wafer W during the exposure process can also be detected, and the result is fed back to the exposure apparatus 14 so that the exposure condition is corrected. You can also. Furthermore, when the resist pattern force obtained by changing the exposure amount and focus value respectively corrects the exposure amount and focus value, the curve E in FIG.
  • the optimum focus value F may be used.
  • the present invention is also applicable to a photolithography technique on a glass substrate for FPD (flat panel display) typified by a liquid crystal display device. Can do.
  • the line width measuring device ODP
  • the resist coating and development processing system 1 in the X direction can be accessed so that the wafer transfer mechanism 21 can be accessed. It may be attached to the opposite side.
  • the present invention is suitable for improving the accuracy of resist patterns when manufacturing semiconductor devices and FPDs.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

L’invention concerne un film de résist formé sur une plaquette (W) en utilisant un système de processus de revêtement/de développement de résist (1), réalisant le processus de formation et de développement de film de résist sur la plaquette (W), et un équipement d’exposition (14) réalisant le processus d’exposition. Une pluralité de portions du film de résist sont exposées et développées de manière séquentielle avec le même motif en modifiant les valeurs de focalisation. Le système de processus de revêtement/de développement de résist (1) mesure la largeur de trait d’un motif de résist obtenu par la technologie de diffusiométrie, décide d'une valeur optimale de focalisation à partir d’une relation entre la largeur de trait obtenue et une valeur de focalisation correspondant à la largeur, et transmet des données de correction de la valeur de focalisation de l’équipement d’exposition (14) à l’équipement d’exposition (14) par communication de données sans intervention manuelle. L’équipement d’exposition (14) corrige la valeur de focalisation sur la base des données.
PCT/JP2005/019563 2004-11-01 2005-10-25 Procédé de correction de condition d’exposition, équipement de traitement de substrat et programme informatique WO2006049037A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004318275A JP2006128572A (ja) 2004-11-01 2004-11-01 露光条件補正方法、基板処理装置およびコンピュータプログラム
JP2004-318275 2004-11-01

Publications (1)

Publication Number Publication Date
WO2006049037A1 true WO2006049037A1 (fr) 2006-05-11

Family

ID=36319051

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2005/019563 WO2006049037A1 (fr) 2004-11-01 2005-10-25 Procédé de correction de condition d’exposition, équipement de traitement de substrat et programme informatique

Country Status (2)

Country Link
JP (1) JP2006128572A (fr)
WO (1) WO2006049037A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112213922A (zh) * 2019-07-09 2021-01-12 芯恩（青岛）集成电路有限公司 一种光刻曝光条件的设定方法

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007184537A (ja) 2005-12-07 2007-07-19 Canon Inc 露光方法、露光装置、複数の基板上にレジストを塗布する装置およびデバイス製造方法
JP4970882B2 (ja) * 2006-09-25 2012-07-11 東京エレクトロン株式会社 基板の測定方法、プログラム、プログラムを記録したコンピュータ読み取り可能な記録媒体及び基板の測定システム
TWI367402B (en) 2006-10-12 2012-07-01 Tokyo Electron Ltd Substrate measurement method, program, computer-readabel recording medium recorded with program, and substrate processing system
JP4786499B2 (ja) 2006-10-26 2011-10-05 東京エレクトロン株式会社 熱処理板の温度設定方法、プログラム、プログラムを記録したコンピュータ読み取り可能な記録媒体及び熱処理板の温度設定装置
JP4850664B2 (ja) 2006-11-02 2012-01-11 東京エレクトロン株式会社 熱処理板の温度設定方法、プログラム、プログラムを記録したコンピュータ読み取り可能な記録媒体及び熱処理板の温度設定装置
JP4796476B2 (ja) 2006-11-07 2011-10-19 東京エレクトロン株式会社 熱処理板の温度設定方法、プログラム、プログラムを記録したコンピュータ読み取り可能な記録媒体及び熱処理板の温度設定装置
JP5237690B2 (ja) 2008-05-16 2013-07-17 ルネサスエレクトロニクス株式会社 半導体デバイスの製造方法
KR102180027B1 (ko) 2014-09-19 2020-11-17 삼성전자 주식회사 최적의 포커스 및 도즈를 결정하기 위한 노광 공정 계측 방법 및 이를 이용한 노광 공정 모니터링 방법
JP2022097352A (ja) * 2021-05-17 2022-06-30 株式会社ニコン 露光方法、露光装置、及びデバイス製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003001297A2 (fr) * 2001-06-26 2003-01-03 Kla-Tencor Corporation Procede de determination de la focalisation et de l'exposition lithographiques
WO2003007365A2 (fr) * 2001-07-10 2003-01-23 Applied Materials, Inc. Module de traitement de semiconducteurs a metrologie de reintroduction/transmission d'informations integree
JP2003142397A (ja) * 2001-11-08 2003-05-16 Hitachi Ltd 半導体装置の製造方法および製造システム
JP2004157478A (ja) * 2002-11-08 2004-06-03 Fuji Photo Film Co Ltd ハロゲン化銀カラー写真感光材料及び画像形成方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003001297A2 (fr) * 2001-06-26 2003-01-03 Kla-Tencor Corporation Procede de determination de la focalisation et de l'exposition lithographiques
WO2003007365A2 (fr) * 2001-07-10 2003-01-23 Applied Materials, Inc. Module de traitement de semiconducteurs a metrologie de reintroduction/transmission d'informations integree
JP2003142397A (ja) * 2001-11-08 2003-05-16 Hitachi Ltd 半導体装置の製造方法および製造システム
JP2004157478A (ja) * 2002-11-08 2004-06-03 Fuji Photo Film Co Ltd ハロゲン化銀カラー写真感光材料及び画像形成方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112213922A (zh) * 2019-07-09 2021-01-12 芯恩（青岛）集成电路有限公司 一种光刻曝光条件的设定方法

Also Published As

Publication number Publication date
JP2006128572A (ja) 2006-05-18

Similar Documents

Publication Publication Date Title
JP4842513B2 (ja) 半導体製造方法及びその装置
US7902485B2 (en) Temperature setting method of thermal processing plate, temperature setting apparatus of thermal processing plate, program, and computer-readable recording medium recording program thereon
US8440475B2 (en) Alignment calculation
JP4527652B2 (ja) 露光条件設定方法、基板処理装置およびコンピュータプログラム
US20100047702A1 (en) Resist pattern forming method
KR101400654B1 (ko) 기판 처리 방법, 컴퓨터 판독 가능한 저장 매체, 및 기판 처리 시스템
KR101072282B1 (ko) 기판 처리 장치, 기판 처리 방법, 기판 처리 프로그램 및 그 프로그램을 기록한 컴퓨터 판독 가능한 기록 매체
TWI654499B (zh) 判定特徵之位置之方法、系統及電腦程式產品
JP4090986B2 (ja) 線幅測定方法，基板の処理方法及び基板の処理装置
WO2006049037A1 (fr) Procédé de correction de condition d’exposition, équipement de traitement de substrat et programme informatique
US6963789B2 (en) Substrate processing apparatus control system and substrate processing apparatus
KR101074441B1 (ko) 기판 처리 장치 및 기판 처리 방법
KR101072330B1 (ko) 기판 처리 장치, 기판 처리 방법, 기판 처리 프로그램을 기록한 컴퓨터 판독 가능한 기록 매체
KR101389109B1 (ko) 기판 처리 장치 및 기판 처리 방법
US7420650B2 (en) Method of setting processing condition in photolithography process, apparatus for setting processing condition in photolithography process, program, and computer readable recording medium
CN110767575A (zh) 用于处理基板的设备和方法
JP2003158056A (ja) パターン形成システム
JP2004214385A (ja) 塗布膜形成装置及びその方法
WO2006054496A1 (fr) Méthode et système de détection de précision de synchronisation, méthode et système de détection d’aberration et programme informatique
JP5537063B2 (ja) プロキシミティ露光装置、プロキシミティ露光装置のギャップ制御方法、及び表示用パネル基板の製造方法
KR20080010749A (ko) 기준 정렬 마크 이미지 갱신 방법
JP2003142374A (ja) レジストパターン形成装置及びその方法
JP2005191303A (ja) 現像処理方法及び現像処理装置

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS KE KG KM KP KR KZ LC LK LR LS LT LU LV LY MA MD MG MK MN MW MX MZ NA NG NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SM SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): BW GH GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LT LU LV MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 05799299

Country of ref document: EP

Kind code of ref document: A1