[go: up one dir, main page]

WO2008128039A2 - Implantation d'agrégats ioniques pour l'ingénierie des défauts - Google Patents

Implantation d'agrégats ioniques pour l'ingénierie des défauts Download PDF

Info

Publication number
WO2008128039A2
WO2008128039A2 PCT/US2008/060029 US2008060029W WO2008128039A2 WO 2008128039 A2 WO2008128039 A2 WO 2008128039A2 US 2008060029 W US2008060029 W US 2008060029W WO 2008128039 A2 WO2008128039 A2 WO 2008128039A2
Authority
WO
WIPO (PCT)
Prior art keywords
cluster
implant
ion
dopant
boron
Prior art date
Application number
PCT/US2008/060029
Other languages
English (en)
Other versions
WO2008128039A3 (fr
Inventor
Wade A. Krull
Dale C. Jacobson
Karuppanan Sekar
Thomas N. Horsky
Original Assignee
Semequip, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semequip, Inc. filed Critical Semequip, Inc.
Publication of WO2008128039A2 publication Critical patent/WO2008128039A2/fr
Publication of WO2008128039A3 publication Critical patent/WO2008128039A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26566—Bombardment with radiation with high-energy radiation producing ion implantation of a cluster, e.g. using a gas cluster ion beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2658—Bombardment with radiation with high-energy radiation producing ion implantation of a molecular ion, e.g. decaborane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors

Definitions

  • the present invention relates to a method of semiconductor manufacturing in which doping is accomplished by the implantation of ion beams formed from ionized molecules, and more particularly to a method in which molecular and cluster dopant ions are implanted into a substrate with and without a co-implant of non-dopant cluster ion , such as a carbon cluster ion, wherein the dopant ion is implanted into the amorphous layer created by the co-implant in order to reduce defects in the crystalline structure, thus reducing the leakage current and improving performance of the semiconductor junctions, the dopant ions being of the form A n H x + , or A n R 2 H x + , where n , x and z are integers with n greater than or equal to 4 and x and z greater than or equal to 0, and A is carbon, boron, indium, arsenic, phosphorus, or antimony and R is a non-dopant molecule
  • the present invention utilizes the auto-amorphization properties of clusters in order to ameliorate the problem of annealing out the implant damage caused by prior art Ge pre-amorphization implants. These species, either alone or in combination, allow for the formation of defect- free USJ's of both n- and p-type.
  • the fabrication of semiconductor devices involves, in part, the introduction of specified impurities into the semiconductor substrate to form doped regions.
  • the impurity elements are selected to bond appropriately with the semiconductor material so as to create electrical carriers.
  • This introduction alters the electrical conductivity of the semiconductor material in the "doped" region.
  • the concentration of dopant impurities so introduced determines the electrical conductivity of the resultant region.
  • the electrical carriers can either be electrons (generated by N-type dopants) or holes (generated by P-type dopants). Many such N- and P-type impurity regions must be created to form transistor structures, isolation structures and other such electronic structures, which function collectively as a semiconductor device.
  • Ion implantation is the conventional method of introducing dopants into a semiconductor substrate, hi ion implantation, a feed material containing the desired element is introduced into an ion source and energy is supplied to ionize the feed material, creating ions which contain the dopant element.
  • the elements As, P, and Sb are donors or N- type dopants, while B and In are acceptors or P-type dopants.
  • An accelerating electric field is provided to extract and accelerate the ions, thus creating an ion beam.
  • the ions contain a positive charge.
  • negatively-charged ions may be used.
  • Mass analysis is used to select the exact species to be implanted.
  • the mass-analyzed ion beam may subsequently pass through ion optics which alter its final velocity or change its spatial distribution prior to being directed into a semiconductor substrate or work piece.
  • the accelerated ions possess a well-defined kinetic energy which allows the ions to penetrate the target to a predetermined depth. Both the energy and mass of the ions determine their depth of penetration into the target. Higher energy and/or lower mass ions allow deeper penetration into the target due to their greater velocity.
  • the ion implantation system is constructed to carefully control the critical variables in the implantation process.
  • Critical variables include: the ion acceleration, ion mass, ion beam current (electrical charge per unit time), and ion dose at the target (total number of ions per unit area that penetrate into the target).
  • Beam angular divergence the variation in the angles at which the ions strike the substrate
  • beam spatial uniformity and extent must also be controlled in order to preserve semiconductor device yields.
  • Ion implantation is always followed by thermal heating or annealing step.
  • the purpose of this step is two-fold.
  • Damage to the crystal is caused by two energy loss mechanisms that reduce the energy (velocity) of the ions. Firstly there is electron energy loss where energy form the ion is transferred to the electrons in the material. This can cause point defects in the crystal. These defects are easily healed by thermal treatment of a few hundred degrees C. Secondly there is nuclear energy loss that occurs when the ion has a collision with a lattice atom. This results in momentum transfer to the lattice atom and can actually knock it out of place and give it a velocity which interns strikes another atom causing it to move. This cascade of displaced atoms can lead to extended defects. These defects are much more difficult to heal and require higher temperature treatments.
  • the implant conditions There is a strong interaction between the implant conditions, anneal conditions and ambient conditions during the anneal.
  • the species, the energy, the dose, the dose rate, the temperature, the orientation of the wafer with respect to the ion beam, and the angular uniformity of the ion beam all have an impact on the damage profile in the silicon crystal.
  • the anneal temperature, ramp rate, the times and temperatures of thermal plateaus, the ramp rates between plateaus, the ramp rate between a plateau and the maximum temperature, the maximum temperature, the time at maximum temperature, and the quench rate all have effects on the damage structures and profiles.
  • a key process of semiconductor manufacturing is the creation of P-N junctions within the semiconductor substrate. This requires the formation of adjacent regions of P-type and N-type doping.
  • An important example of the formation of such a junction is the implantation of P or N-type dopants into a semiconductor region already containing a uniform distribution of one dopant type. In these cases, an important parameter is the junction depth.
  • the junction depth is defined as: the depth from the semiconductor surface at which the P-type and N-type dopants have equal concentrations. This junction depth is a function of the implanted dopant mass, energy and dose.
  • Beam blow-up is the principal cause of beam loss in low-energy transport.
  • Low-energy electrons present in the implanter beam line tend to be trapped by the positively-charged ion beam, compensating for space-charge blow-up during transport. Blow-up nevertheless still occurs, and is most pronounced in the presence of electrostatic focusing lenses, which tend to strip the loosely-bound, highly mobile compensating electrons from the beam.
  • severe extraction and transport difficulties exist for light ions, such as the N-type dopants phosphorus and arsenic. Being lighter than arsenic, phosphorus atoms penetrate further into the substrate than many other atoms, including arsenic. Hence the required implantation energies for phosphorus are lower than for arsenic. In fact, extremely low implantation energies, as low as 1 keV, are being required for certain leading edge USJ processes.
  • Heavier species specifically cluster molecules, not only provide increased beam currents, but in many cases tend to auto-amorphize the crystalline silicon lattice.
  • This type of auto- amorphization has been shown to be beneficial to the activation of P-type dopants, such as boron, and should provide similar benefits for N-type dopants.
  • auto-amorphization reduces ion channeling, enabling a shallower junction than possible in crystalline silicon, hi fact, the process of record for many USJ logic manufacturers consists of a pre-amorphization implant of Ge or Si prior to performing the conductive doping implants in order to obviate channeling effects.
  • a technique to overcome the limitations imposed by the Child-Langmuir relation discussed above is to increase the transport energy is by ionizing a molecule containing the dopant of interest, rather than a single dopant atom.
  • the molecule breaks up into its constituent atoms, sharing the energy of the molecule among the individual atoms according to their distribution in mass, while the kinetic energy of the molecule is higher during transport, the dopant atom's implantation energy is much lower than the original transport kinetic energy of the molecular ion.
  • This process dissociates BF 3 feed gas to the BF 2 + ion for implantation, hi this way, the ion mass is increased to 49 AMU from 11 AMU. This increases the extraction and transport energy by more than a factor of 4 (i.e., 49/11) over using single boron atoms. Upon implantation, however, the boron energy is reduced by the same factor of (49/11). It is worthy of note that this approach does not reduce the current density in the beam, since there is only one boron atom per unit charge in the beam. A detriment to this process is the implanting of fluorine atoms into the semiconductor substrate along with the boron. This is an undesirable feature of this technique since fluorine has been known to exhibit adverse effects on the semiconductor device.
  • Cluster Implantation A more effective way to increase the dose rate is to implant clusters of dopant atoms.
  • molecular ions of the form X n Y m + where n and m are integers and n is greater than one.
  • the implanted particle was a positive ion of the boron cluster molecule, B 18 H 22 , which contains 18 boron atoms, and is therefore a "cluster" of boron atoms.
  • This technique not only increases the mass of the ion and hence the transport ion energy, but for a given ion current, it substantially increases the implanted dose rate, since the boron cluster ion B 18 Hx + has eighteen boron atoms.
  • Cluster ion implantation or molecular implantation, has recently emerged as a production alternative for USJ formation.
  • the use of cluster species dramatically increased wafer throughputs for the ultra-low energy implants required for USJ formation. See for example, Daniel T. Tieger, William Divergelio, Edward C. Eisner, Mark Harris, TJ. Hsieh, John Miranda, William P. Reynolds, Vincent consia, and Tom Horsky, IEEE Proceedings of the XVI th International Conference on Ion Implantation Technology, June 11 — 16, 2006, Marseilles, France, hereby incorporated by reference.
  • the present invention to a method of semiconductor manufacturing in which doping is accomplished by the implantation of ion beams formed from ionized molecules, and more particularly to a method in which molecular and cluster dopant ions are implanted into a substrate with and without a co-implant of non-dopant cluster ion , such as a carbon cluster ion, wherein the dopant ion is implanted into the amorphous layer created by the co-implant in order to reduce defects in the crystalline structure, thus reducing the leakage current and improving performance of the semiconductor junctions.
  • Dopant ion compounds of the form A n H x + and A n R 2 H x + are used in order to minimize crystal defects as a result of ion implantation .
  • These compounds include co- implants of carbon clusters with implants of monomer or cluster dopants or simply implanting cluster dopants.
  • the invention described herein consists of a method of implanting semiconductor wafers implanting semiconductor wafers with carbon clusters followed by implants of boron, phosphorus, or arsenic, or followed with implants of dopant clusters of boron, phosphorus, or arsenic.
  • the molecular cluster ions have the chemical form A n H x + or A n R 2 H x + , where A designates the dopant or the carbon atoms, n and x are integers with n greater than or equal to 4, and x greater than or equal to 0, and R is a molecule which contains atoms which, when implanted, are not injurious to the implantation process (for example, Si, Ge, F, H or C).
  • These ions are produced from chemical compounds of the form A b L z H m , where the chemical formula of L 2 contains R, and b may be a different integer from n and m may be an integer different from x and z is an integer greater than or equal to zero.
  • boron-bearing cluster materials usefule for PMOS implantation are
  • the invention also relates to a method of manufacturing a semiconductor device being capable of forming ultra-shallow impurity-doped regions of N and P-type conductivity in a pre-amorphized zone, formed by carbon clusters of the form C n H x + , or C n R 2 H x + , where C is carbon, and H is hydrogen, n and x are integers with n > 1, and x > 0, R is a molecule, radical or ligand which contain atoms that are not injurious to the implantation process or semiconductor device performance, followed by a dopant implant, such as P, As, or B, thus limiting channeling, dopant diffusion and eliminating end of range defects when coupled with an appropriate anneal, and furthermore to do so with high productivity.
  • a dopant implant such as P, As, or B
  • the energy of the pre-amorphizing implant must be chosen based on the specific molecule to form an amorphous layer of a thickness equal to the projected range of the dopant implant to five times the range of the dopant implant.
  • the dose of the pre-amorphizing implant must be chosen based on the specific nature and composition of the molecule or cluster to fully amorphize the aforementioned surface layer.
  • the peak concentration of carbon must be in the range of 1E17 to 1E19 carbon/cm 3 .
  • the pre-amorphizing implant must always be accomplished before the doping implant is commenced.
  • Sb 4 is a stable molecular cluster which can easily be obtained by evaporating solid antimony. In addition, it is the primary component of Sb vapor with small amounts of the dimer (Sb 2 ) and trimer (Sb 3 ) included, see Mark L. Polak et. al. , J. Chem. Phys. 97 (12), 15 December 1992. Finally, the vapor pressure of Sb is about IXlO "5 torr at 500 C, see R.E. Honig and D.A.Kramer, RCA Review, 30, (1969) 285, which makes it a reasonable candidate to vaporize from a solid in a typical ion source hot oven.
  • the carbon cluster implant is chosen such that the amorphous layer it creates is at least as thick as the end of range of the subsequent dopant implant, so that virtually all of the defects associated with the dopant implant are created in amorphous material. This insures that these defects will be easily annealed out during the subsequent activation step.
  • An alternate embodiment of the invention is to provide a method of manufacturing a semiconductor device, this method being capable of forming ultra-shallow impurity-doped regions of N and P-type conductivity in an pre-amorphized zone, formed by carbon clusters of the form C n H x + , or C n R 2 H x + , where C is carbon, and H is hydrogen, n , x and z are integers with n > 1 , and x and z > 0, R is a molecule, radical or ligand which contain atoms that are not injurious to the implantation process or semiconductor device performance, using ionized clusters of the form A n H x + , A n R 2 H x + , A n C m H x + , or A n C m R z H x + where A is a dopant atom such as B, P,or As, n , x and z are integers with 4 ⁇ n, 0
  • the energy of the pre-amorphizing implant must be chosen based on the specific molecule to form an amorphous layer of a thickness equal to the projected range of the dopant implant to five times the rage of the dopant implant.
  • the dose of the pre-amorphizing implant must be chosen based on the specific nature and composition of the molecule or cluster to fully amorphize the aforementioned surface layer.
  • the peak concentration of carbon must be in the range of 1E17 to 1E19 carbon/cm 3 .
  • the pre-amorphizing implant must always be accomplished before the doping implant is commenced.
  • the pre-amorphizing implant must always be accomplished before the doping implant is commenced.
  • Another alternate embodiment of the invention is to provide a method of manufacturing a semiconductor device, this method being capable of forming ultra-shallow impurity-doped regions of N and P-type conductivity in an auto-amorphized zone, using ionized clusters of the form A n C 1n H x + , or A n C m R z H x + , where A is a dopant atom such as B, P, or As, n , x and z are integers with 1 ⁇ n, 0 ⁇ m, and x and z > 0, R is a molecule, radical or ligand which contain atoms that are not injurious to the implantation process or semiconductor device performance, thus limiting the dopant diffusion and eliminating end-of-range defects with a single implant, and furthermore to do so with high productivity, hi this preferred embodiment, the carbon cluster implant is chosen such that the amorphous layer it creates is at least as thick as the end of range of the subsequent dopant implant
  • the present invention increases the benefits of N-type cluster implantation, for example, by using significantly larger dopant clusters, such as, phosphorus or arsenic clusters having more than 3 dopant atoms.
  • dopant clusters such as, phosphorus or arsenic clusters having more than 3 dopant atoms.
  • Carbon cluster ions, C x H y + can be used to deliver low energy high dose carbon ion beam to the semiconductor surface to pre-amorphize the silicon to eliminate channeling and at the same time position C atoms below the surface to substantially reduce B diffusion in the B implant that will immediately follow the C implant. Additionally the carbon cluster exhibits the same charge reducing benefits as the doping clusters.
  • the cluster implants are at such a low equivalent energy (less than Ike V) that the defects are so near the surface that the surface acts as a sink for the defects and that they all migrate to the surface and evaporate.
  • Fig. 1 is an ion mass spectrum OfB 18 H 22 using a boron cluster source with an extraction voltage of 2OkV.
  • Fig.2 represents SIMS profiles OfB 18 H x + and monomer B + implants with and without a Ge PAI process. Slight channeling is observed for the B 18 H x + -only implant.
  • Fig. 3 represents XTEM images OfB 18 H x + implants as-implanted and with laser, flash and SPE anneals. No crystal defects are seen in any of the annealed structures.
  • Fig. 4 illustrates photoluminescence data for B + , BF 2 + , and B 18 H x + -implanted samples with and without a Ge PAI for various annealing steps.
  • Figure 5 shows junction leakage as determined by the Frontier Semiconductor method, as a function of implant process and anneal conditions. B 18 H x + is shown to produce very low levels of junction leakage regardless of which anneal condition is chosen.
  • Fig. 6 is a XTEM image of carbon cluster as-implanted structure showing an auto- amorphization layer of 14nm thickness. Implant conditions were 3keV per carbon atom and a dose of lE15/cm 2 carbon. The arrow indicates the position of the surface.
  • Fig.7. is a SIMS profiles showing the benefit of a carbon cluster in controlling the diffusion of boron (B 18 H x + ) implant. As-implanted, without carbon and with carbon profiles are shown.
  • Fig. 8 is an XTEM image showing no EOR damage after an 5 sec anneal at 1025 0 C for B 18 H x + implanted at 50OeV per boron atom preceded by a 3keV per carbon atom C 16 H x + implant, both at IeI 5 atoms/cm 2 .
  • Fig. 9 illustrates Raman spectroscopy results showing stress generated by carbon cluster implant after anneal.
  • Fig. 10 illustrates stress data for various carbon cluster implant conditions and anneal conditions. Both C 16 H x + and C 7 H x + implants are shown to produce similar levels of stress.
  • Fig. 1 IA shows a transmission TEM after a 1 el 5, 50OeV per boron B 18 H x + implant into a silicon wafer.
  • the implant produced a 6.2nm amorphous layer.
  • Fig. 1 IB shows a 1E15, 3 keV per carbon C 16 H x + implant which produced a 14nm amorphous layer.
  • Fig. 12 shows SIMS profiles comparing the as-implanted boron profile after a 30OeV per boron B 18 H x + implant to annealed samples which had also been implanted with either fluorine or carbon cluster for diffusion control.
  • Fig. 13A shows cross-section transmission electron micrographs (X-TEM) of
  • Fig. 13B is similar to Fig. 13 A but for a laser.
  • Fig. 13C is similar to Fig. 13 A but for a flash anneal.
  • Fig. 14A shows plan view TEM's of 50OeV per boron, Iel5 B 18 H x + -implanted samples after a 650C SPE anneal.
  • Fig. 14B is similar to Fig. 14A except after 720C SPE anneal.
  • Fig. 14 C is similar to Fig. 14A except after 1075 C spike anneal.
  • Fig. 15A shows X-TEM's for Ge pre-amorphized, B 18 H x + -implanted samples before anneal.
  • Fig. 15B is similar to Fig. 15A except after a 5s, 950C anneal on an Axcelis
  • Fig. 16A shows annealed X-TEM images of samples implanted first with Iel5, 3kV per boron C 16 H x + ions, followed by a IeI 5, 50OeV per boron B 18 H x + implant appropriate for 65nm
  • Fig. 16B is similar to Fig. 16A except on a 5nm scale.
  • Fig.17 is a graphical illustration illustrating silicon crystal lattice damage, as measured by a known photolurninescence technique.
  • Fig. 18 is a graphical illustration illustrating junction leakage current by the Frontier method of JP V.
  • Fig. 19A shows a 50OeV per boron atom implant at 5el3 atoms/cm 2 (no amorphous layer)
  • Fig. 19B is similar to Fig. 19A except the boron implant is Iel4 atoms/cm 2 (3nm deep amorphous pockets).
  • Fig. 19C is similar to Fig. 19A except the boron implant is IeI 5 atoms/cm 2 (6.2nm thick amorphous layer). The arrow indicates the position of the surface.
  • Fig. 2OA is a SIMS profile for P+, 200keV at 0° tilt and 0° twist.
  • Fig. 2OB is similar to fig. 2OA except at Iel4
  • Fig. 21 is a differential boron SIMS profile for B 18 H 22 at 0.5keV implanted at various doses.
  • Fig. 22A shows XTEM images of C 16 H x implant at 1 el 5 atoms/cm 2 at 3keV per carbon atom.
  • the amorphous layer depth at 3 & 2keV are 14nm and 12nm, respectively.
  • the arrow indicates the surface position.
  • Fig. 22B is similar except at 2keV per carbon atom
  • Fig. 23 A illustrates XTEM images of C 7 H x implant at 1 OkeV per carbon atom at
  • Fig. 23B is similar to Fig. 23A except at 2el5 atoms/cm 2 .
  • Fig 24 shows amorphous layer thickness at various doses for few energies OfC 16 H x and C 7 H x species.
  • the present invention to a method of semiconductor manufacturing in which doping is accomplished by the implantation of ion beams formed from ionized molecules, and more particularly to a method in which molecular and cluster dopant ions are implanted into a substrate with and without a co-implant of non-dopant cluster ion, such as a carbon cluster ion, wherein the dopant ion is implanted into the amorphous layer created by the co-implant in order to reduce defects in the crystalline structure, thus reducing the leakage current and improving performance of the semiconductor junctions.
  • a new implant technology has been developed as an alternative for low energy boron implant.
  • the concept of this technology is to use a molecular ion which contains many boron atoms to avoid the fundamental issues with conventional ion implantation of low energy boron.
  • a new chemical, octadecaborane B 18 H 22 may used as the source of this molecule, boron cluster, and a new ion source has been developed to allow its utilization, for example, as disclosed in commonly owned co-pending US Patent Application No. 10/519,699, filed on September 14, 2005, published as US Patent Application Publication No. US 2006/0097193 Al, entitled " Ion Implantation Device and a Method of Semiconductor Manufacturing by the Implantation of Boron Hydride Cluster Ions", hereby incorporated by reference. It has been found that the implantation of boron clusters has additional advantages in terms of self-amorphization and elimination of crystal defects. Further, additional species with similar properties have been demonstrated, especially two molecules for delivering carbon.
  • the basis concept of this new technology is the use of molecular ion species which contain more than one dopant atom.
  • Conventional implant technology has always utilized ion species which contain only one dopant atom per ion.
  • the implant equipment operates at n times higher extraction voltage and thereby avoids the fundamental physics limitations of forming an ion beam at low extraction voltage.
  • this ion species enters the silicon wafer, the molecule dissociates and each atom behaves exactly as a conventionally implanted atom would with atomic energy equal to the mass fraction of the total ion energy.
  • a new chemical has been developed as a source of molecules which contain many boron atoms.
  • the chemical is a boron cluster, and it's constitution is B 18 H 22 .
  • This chemical is used to produce an ion beam of species B 18 H x + which is found to be very useful for the range of low energy boron implants required for technology nodes at 65nm and smaller.
  • a 50OeV equivalent boron implant is performed with an extraction voltage of 10keV using B 18 H x + , a very comfortable range to operate any implantation system.
  • This material is a solid at room temperature, which is beneficial for moderating the toxicity of this hydride material, but required the development of a new vaporizer technology for providing B 18 H 22 to the ion source. Fortunately, the material vaporizes in the range of 90-100 0 C, allowing engineering solutions with high accuracy and reliability. At the other end, the material decomposes above 200 0 C. Again, engineering solutions are easily able to operate in this temperature range with high robustness and moderate cost since the hardware can be fabricated from aluminum.
  • the excitation for ionization is a low energy electron beam ( ⁇ 50mA of ⁇ 300eV electrons) which are generated remotely from the process vapor and transported to the region of ionization, hi this way, a column of ionized vapor is created parallel and adjacent to the extraction slot, allowing for high efficiency extraction of the B 18 H x + ions.
  • This soft ionization system has been demonstrated to be effective at ionizing the boron cluster vapor, and currents as high as 3mA of B 18 H x + ions have been achieved.
  • the mass spectrum of the generated ion beam is shown in Fig 1, where it is seen that the dominant ion created is the B 18 H x + ion. The only other beam components are a small amount of doubly charged and very small amounts of B + and H + .
  • Fig. 1 is a mass spectrum OfB 18 H 22 using the boron cluster source with an extraction of 20keV.
  • Fig.2 illustrates SIMS profiles OfB 18 H x + and monomer B + implants with and without a Ge PAI process. Slight channeling is observed for the B 18 H x + -only implant. It is seen that most of the channeling has been avoided, although there remains some channeling effect. The self-amorphization process is discussed in more detail below.
  • Carbon cluster molecules such as, C 16 H 10 and C 7 H 7 , provide a means of studying the damage creation mechanism with the same chemistry and are providing interesting results, for example, as reported by K. Sekar, W. A. Krull, T. Horsky, D. C. Jacobson, K. Jones, D. Henke, Proc. of International Conference on INSIGHT in Semiconductor Device Fabrication, Metrology and Modeling, May 6 - 9, Napa, USA (2007) , hereby incorporated by reference. Notably, it is seen that much higher doses are needed to achieve amorphization with the smaller carbon cluster, so the damage deposition at the surface is strongly mass dependent.
  • a further result of the different damage deposition process with a boron cluster implant relates to the end of range (EOR) damage and its annealing behavior.
  • EOR end of range
  • Fig. 3 shows some results from the work of, J.O. Borland, Proc. 16 th International Conference on Ion Implant Technology, p6 (2004), hereby incorporated by reference, where the B 18 H x + implant is shown to be defect-free with very advanced anneal conditions; flash, laser and SPE.
  • Fig. 3 represents XTEM images OfB 18 H x + implants as-implanted and with laser, flash and SPE anneals. No crystal defects are seen in any of the annealed structures.
  • FIG. 4 shows photoluminescence (PL) signal for B, BF 2 and B 18 H x + implants with and without PAI and for a variety of annealing technologies.
  • the PL signal indicates the presence of crystal damage, so low numbers are better.
  • the B 18 H x + only case produces consistently detection level results with any annealing technology. None of the other approaches to USJ formation produce as consistently low PL numbers.
  • the B 18 H x + -only process is shown to produce very low PL numbers regardless of which annealing condition is chosen.
  • Fig. 5 shows the corresponding data for junction leakage, as obtained by the Frontier method. It is remarkable that the structure of the figure is consistent with Fig. 4, showing the correlation between crystal damage and junction leakage. Again, the B 18 H x + -only case produced the most consistently low leakage, and achieved detection level leakage with any of the advanced anneal conditions. Fig. 5 illustrates junction leakage as determined by junction photo-voltage measurements, as a function of implant process and anneal conditions. B 18 H x + is shown to produce very low levels of junction leakage regardless of which anneal condition is chosen.
  • FIG. 6 is a XTEM image of carbon cluster as- implanted structure showing a self-amorphization layer of 14nm thickness. Implant conditions were 3keV per carbon atom and a dose of lE15/cm 2 carbon. The arrow indicates the position of the surface.
  • Fig. 7 illustrates that the carbon cluster/ sequence behaves like the conventional cocktail implant process. Li particular, Fig.7 is a SIMS profiles showing the benefit of a carbon cluster in controlling the diffusion of boron (B 18 H x + ) implant. As-implanted, without carbon and with carbon profiles are sown. Further, it has been found that the cluster sequence also have the benefit previously mentioned of elimination of EOR defects. Fig.
  • Fig. 8 is a TEM image of the carbon cluster/boron cluster implant sequence process post anneal and illustrates that no crystal defects remain. More particularly, Fig. 8 is a XTEM image showing no EOR damage after an 5 sec anneal at 1025 0 C for (CB/CC) [B 18 H x + 50OeV per boron atom + Ci 6 3keV per carbon atom] both at Iel5 atoms/cm 2 .
  • CMOS solutions for advanced technology nodes have focused largely on incorporating stress into the channel to improve mobility. This has been remarkably successful at improving the performance of the PMOS transistor by incorporating SiGe source and drain structures to place the PMOS channel under compressive stress. Stress engineering of the NMOS has been less successful, but much effort is currently in progress to use nitride structure to achieve tensile stress of the NMOS channel. Another potential method of achieving improvement of the NMOS is to use SiC alloys in the source and drain to create the proper tensile stress on the channel. These epitaxial deposition methods under development are challenging.
  • the present invention provides a new alternative: the use of a carbon cluster implant to create the SiC alloy material with a simple and direct process.
  • the present invention provides process recipes which have been shown to produce high degress of stress in blanket layers, as measured by Raman spectroscopy, as shown in Fig. 9.
  • Fig.9 is a Raman spectroscopy results showing stress generated by carbon cluster implant. It is found that the self- amorphization feature of the carbon cluster implant is very beneficial to the success of this process: the recrystallization of the amorphous layer directly promotes placing the carbon into substitutional sites, which is required to achieve the proper stress.
  • Fig. 10 illustrates stress results that have been achieved with stress values as high as 800MPa. More particularly, Fig. 10 illustrates stress data for various carbon cluster implant conditions and anneal conditions. Both C 16 H x+ and C 7 H x + implants are shown to produce similar levels of stress. Data by UV Raman spectroscopy.
  • Cluster ion technology in accordance with the present invention provides a production solution for the implantation of large molecules containing many atoms of the desired species, rather than the conventional method of implanting one atom at a time. It has been shown that this technology provides very high productivity for low energy implants while also producing process benefits. These process features include lack of energy contamination, self-amorphization and easy elimination of EOR damage, producing defect-free structures with low junction leakage. Boron cluster and carbon cluster species are utilized with direct application to the conventional uses of low energy boron and carbon implants. In addition, a new application for NMOS stress engineering has been described for the carbon cluster implant.
  • Wafers used were 200mm, n-type, (100) silicon substrates.
  • the wafers were implanted with different cluster species at various energies and doses using boron cluster and carbon cluster materials fed into a cluster ion source, and producing beams of B 18 H x + , C 16 H x + , and C 7 H x + ions.
  • This ion source technology preserves these large molecules through a soft-ionization process.
  • the implants were performed on an Axcelis GSD high-current implanter retrofit with an ion source, such as disclosed in co-pending commonly owned US Patent Application No. 10/519,699, filed on September 14, 2005, published as US Patent Application Publication No.
  • Figs. 1 IA and 1 IB illustrate the amorphization benefits of implanting with clusters.
  • Fig. 12 shows SJJVlS profiles comparing the as-implanted boron profile after a 30OeV per boron B 18 H x + implant to annealed samples which had also been implanted with either fluorine or carbon cluster for diffusion control.
  • the carbon cluster + boron cluster implant yields a much more shallow and abrupt junction than either B 18 H x + alone or B 18 H x + + F.
  • Figs 13A-13C illustrate cross-section transmission electron micrographs (X-TEM) of
  • FIG. 14 shows plan view TEM 's of 50OeV per boron, IeI 5 B 18 H x + - implanted samples after (a) 650C SPE; (b) 720C SPE; (c) 1075C spike anneal. Anneals were performed on an ASM LevitorTM system , for example, as disclosed by Klaus Funk, substitute Kurs RTP- & Ionenimplantations-Nutzer weakness-Treffen, Villach, Austria, September 25-26, 2006, hereby incorporated by reference. Fig.
  • FIG. 15 shows X-TEM's for Ge pre-amorphized, B 18 H x + - implanted samples (a) before anneal; and (b) after a 5s, 950C anneal on an Axcelis SummitTM RTP system.
  • the EOR defects are clearly shown at a depth of 12nm, and are still evident after annealing.
  • Fig. 16 shows annealed X-TEM images of samples implanted first with Iel5, 3kV per boron C 16 H x + ions, followed by a Iel5, 50OeV per boron B 18 H x + implant appropriate for 65nm SDE.
  • the anneal was a 5s, 950C spike performed on an Axcelis SummitTM RTP system.
  • C 16 H x + itself produces an amorphous layer.
  • the implantation OfC 16 H x + can be used as an amorphizing implant. When implanted at the appropriate depth and dose, it also accomplishes effective diffusion control, as shown in Fig. 12. Thus, it can be used in lieu of a C implant whenever diffusion control is desired.
  • Carbon cluster as an amorphizing implant is also effective in reducing EOR defects in NMOS transistors.
  • Preliminary results of work using carbon cluster as a co-implant with As 4 + implantation at As energies appropriate for SDE has yielded very low defect junctions.
  • Figs.17 and 18 for a variety of implant and anneal conditions. Implants of B + , BF 2 + , and B 18 H x + with and without Ge PAI and for spike, flash, laser, and SPE anneals, as illustrated in the legends, were performed.
  • Fig. 17 shows photoluminescence data by the Accent PL method, as taught by John Borland et al., IEEE Proceedings of the XVI th International Conference on Ion Implantation Technology, June 11 — 16, 2006, Marseilles, France pp. 96 — 100, hereby incorporated by reference, while in Fig. 8, junction leakage measured by the Frontier Semiconductor non-contact junction photo-voltage (JPV) method is shown.
  • JPV Frontier Semiconductor non-contact junction photo-voltage
  • a pre-amorphization implant (PAI) step is typically used to avoid crystal channeling and thus achieving shallower junctions.
  • Boron cluster (B 18 H 22 ) enables very low energy boron implant processes for the formation of very shallow p-type junctions and effectively amorphizes the silicon eliminating the need for a PAI.
  • the goal of this work is to provide an analysis of the self- amorphization mechanism and to compare a variety of cluster ion species with regard to their self- amorphization.
  • SIMS profiles as a function of implant dose are presented. These data provide strong evidence for the elimination of channeling as the implant progresses and the silicon becomes amorphous. Additional confirmation is provided by the use of a subsequent channeling-sensitive 200keV P + implant to show the threshold of channeling avoidance.
  • XTEM is also used to show the physical structure of the material as a function of implant dose and correlate with the channeling behavior.
  • low temperature anneals such as SPE provides a good opportunity to repair the damage and activate the dopants efficiently.
  • Interstitials and vacancies recombine and the excess interstitials form clusters of ⁇ 311 ⁇ defects near 800 0 C.
  • Rodlike 311 defects are commonly observed in ion implanted silicon and are believed to play important roles in boron transient enhanced diffusion (TED) by providing interstitials during annealing processes. Below a certain damage threshold these ⁇ 311 ⁇ defects easily dissolve at a suitable anneal temperatures. Above a different damage threshold these defects can form dislocation loops that are difficult to remove.
  • PAI pre-amorphization implants
  • the present invention is a significant improvement relative to current technology and consists of creating an amorphous layer through carbon cluster implantation at a depth which encompasses the EOR of a subsequent dopant implant.
  • the subsequent dopant implant can be a cluster but can also be a monomer implant, BF2, As2, etc.
  • dopant implant s which normally cause damage to the substrate crystalline structure, i.e dopants other than cluster ion dopants, such as monomer and molecular dopants are completely contained within the amorphous region created by the carbon cluster co-implant. As such, no extended defects can exist. Any defects caused by the dopant implant are annealed out, for example with msec anneals.
  • the important parameter that is crucial in obtaining the such shallow junction is the self-amorphizing nature of both boron cluster and carbon cluster implants. Similar to carbon cluster and boron cluster combination implants, in accordance with the present invention, a carbon cluster with an arsenic cluster, such as As 4, or a carbon cluster and a phosphorous cluster, such as P 4, produce similar effects on the diffusion of n-type dopants. Since boron and carbon cluster implantation are becoming mainstream manufacturing processes, it is therefore important to characterize the self-amorphization effects OfB 18 H 22 and Ci 6 H 10 and look at the possibility to eliminate standard PAI implants to avoid channeling effect and EOR damage resulting in low damage high quality junctions
  • the present invention illustrates that the amorphizing properties of various cluster species and to evaluate the amorphous layer depth using XTEM measurements.
  • a channeling sensitive implant P + , 200keV, Iel4 atoms/cm 2
  • B 18 H 22 implants 50OeV and 5keV per boron atom
  • Wafers used in this study were 200mm, n-type, (100) silicon substrates.
  • the wafers were implanted with various cluster species at different energies and doses using B 18 H x + , C 16 H x + , C 7 H x + ions from a Clusterlon ® source.
  • TW measurements were performed on the as-implanted wafers before performing SIMS and XTEM measurements.
  • the samples were imaged on a JEOL 2010 FEG TEM using on-axis multi beam imaging conditions.
  • Figs. 19 A, B and C shows XTEM images OfB 18 H 22 50OeV per boron atom implant at doses 5el3, Iel4 and Iel5 atoms/cm 2 respectively.
  • 5el3 dose XTEM image (Fig 19A)
  • Iel4 dose one can see clearly amorphous pockets that are 3nm deep.
  • IeI 5 dose there is a clear presence of an amorphous layer roughly about 6.2nm thick.
  • This amorphous layer depth is roughly the sum (R p + ⁇ R P ) of projected range (R p ) and the straggle ( ⁇ R P ) for boron at 50OeV.
  • Fig. 19 shows a 50OeV per boron atom implant at A 5el3 atoms/cm 2 (no amorphous layer) B Iel4 atoms/cm 2 (3nm deep amorphous pockets) C IeI 5 atoms/cm 2 (6.2nm thick amorphous layer). The arrow indicates the position of the surface.
  • B 18 H 22 was implanted at 0.5keV and 5keV (per boron atom) at various doses from IeI 3 to IeI 5 atoms/cm 2 , and a channeling sensitive P+, 200keV, Iel4 implant was performed at 0° tilt and 0° twist on those wafers to determine the degree of damage created by the boron cluster implants. It is expected that P will penetrate deeper in crystalline Si and shallower in amorphous Si. SIMS measurements were carried out to determine P profile and from the profile determined the critical dose for amorphization threshold.
  • Figs. 2A and 2B shows the P SBvIS profile on the samples implanted with 0.5keV and 5.0keV per boron atom boron cluster at various doses.
  • Fig. 20 is a SJJVIS profile for P+, 200keV, Iel4 at 0° tilt and 0° twist. From Fig. 2OA it is seen that the P profile is different for boron cluster implant with Iel3 and Iel5 dose. The depth at P concentration of Iel7 atoms/cm 3 for Iel3 dose is around 0.9 ⁇ m and for Iel5 it is 0.7 ⁇ m. The deeper profile for IeI 3 is likely due to the steering of P atoms in crystalline Si. Since such a low implant dose does not produce any appreciable damage, the P implant undergoes channeling and travels deeper into the crystal.
  • boron cluster creates an amorphous layer depth of 6.2nm (Fig. 19C).
  • the presence of an amorphous layer on the top of the crystalline Si dechannels the impinging P atoms and thus steers them away from the channel. These steered away atoms undergo multiple random collisions with Si atoms and lose energy before coming to rest at a relatively shallower depth when compared to a case with a crystalline one.
  • the depth of P profile at Iel7 atoms/cm 3 is already close to 0.8 ⁇ m. This is roughly half the decrease in depth when compared to a completely amorphous case.
  • Fig. 21 is a differential boron SIMS profile for B 18 H 22 at 0.5keV implanted at various doses.
  • Fig. 21 shows the boron differential profile for 0.5keV per boron atom boron cluster implants. All the boron profiles were smoothed by doing a 5 point averaging and normalized with respect to IeI 3 profile. The differential SIMS profile was made by subtracting profiles. For example, the profile entitled "2el3 - Iel3" is obtained by subtracting the SIMS profile from a Iel3 dose from the profile from a 2el3 dose.
  • Fig. 21 shows the incremental boron concentration for various doses. It is clear that we can observe the channeling tail up to 5el3 dose.
  • the Carbon cluster chemical C 16 H 10 is a solid at room temperature and vaporizes in the same temperature range as a boron cluster.
  • the soft ionization system developed for boron cluster also works very well for the carbon cluster vapor, which produces slightly higher electrical beam currents due to the narrower AMU spectrum of a carbon cluster.
  • the carbon cluster ion is in the same AMU range as a boron cluster ( ⁇ 200AMU) and so the remainder of the implant system works the same as with boron cluster. It is shown that carbon cluster inhibits boron diffusion during the anneal process, consistent with other developments using monomer carbon.
  • Fig 22A and 22B show XTEM images of 3keV & 2keV per carbon atom C 16 H x implants at a dose of IeI 5 atoms/cm 2 .
  • the amorphous layer depths at 3keV & 2keV are around 14nm & 12nm respectively at a dose of IeI 5 atoms/cm 2 .
  • FIG. 5 shows XTEM images OfC 7 H x implant at 10keV per carbon atom at A 3el4 atoms/cm 2 & B 2el5 atoms/cm 2 .
  • the arrow indicates the surface position.
  • Fig 23A shows XTEM image at 3el4 dose. Similar to B 18 H 22 implant where the channeling sensitive P+, 200keV implant showed some degree of crystal damage even around 5 el 3 dose, we believe that for Carbon cluster implant at 3el4 dose, there is some degree of crystal damage that is not detected by XTEM.
  • Fig 23B we see a very clean amorphous layer ( ⁇ 26 nm). This amorphous layer depth is very crucial in activating the dopants i.e. placing the carbon atoms in substitutional site. Such activation is the key factor in producing stress in Si lattice.
  • Fig. 24 shows amorphous layer depth vs carbon dose (from XTEM) for various energies and doses for C 7 H x and Ci 6 H x . hi particular, Fig 6 shows amorphous layer thickness at various doses for few energies OfCi 6 H x and C 7 H x species.
  • Ci 6 H x produces a larger amorphous depth when compared to C 7 H x . This difference is basically coming from the heavier mass of the Carbon cluster. Comparing C 7 H x at same dose but at different energies, we see a greater amorphous layer depth for higher energy. This follows from the deeper projected range and higher lateral straggle.
  • Boron cluster and carbon cluster species show self-amorphizing properties that eliminate the need for a PAI implant.
  • Using the channeling-sensitive 200keV P + implant it is found that even at a boron dose of 5el3 atoms/cm 2 , there is sufficient crystal damage to reduce channeling effects. At a dose of 5el4 atoms/cm 2 , the degree of damage is enough to avoid channeling.
  • the amorphous layer depth produced by C 16 H x is greater than the depth produced by C 7 H x species owing to the heavier mass for the former.
  • the amorphous layer depth determined for various energies and doses for Carbon cluster ions (Ci 6 H x + , C 7 H x + ) will prove useful for applications that require amorphization and activation.
  • IA demonstrates that the very implantation OfB 18 H x + at doses appropriate for creating SDE creates an amorphous layer which nearly eliminates channeling, as has been previously reported by Y. Kawasaki, T. Kuroi, K Horita, Y. Ohno and M. Yoneda, Tom Horsky, Dale Jacobson, and Wade Krull, Nucl. Inst. Meth. Phys. Res. B 237 (2005), ⁇ p.25— 29, hereby incorporated by reference.
  • a conductive dopant implant for example, As, P, Sb, In, B, or BF 2 , or the clusters As 2 , As 4 , P 2 , P 4 , C 2 B 10 H 12 , Bi 0 H 14 , Bi 8 H 22 , or any dopant-bearing molecule
  • EOR end of range
  • the preferred embodiment of the process sequence we are recommending is as follows: [00112] a) implant carbon cluster at a great enough dose and energy to produce an amorphous layer deep enough to include the EOR of a subsequent n- or p-type dopant implant;
  • a low thermal budget anneal such as flash, laser or SPE anneal, or with a spike anneal.
  • FIG. 17 and 18 for a variety of implant and anneal conditions. Implants of B + , BF 2 + , and B 18 H x + with and without Ge PAI and for spike, flash, laser, and SPE anneals, as illustrated in the legends, were performed.
  • Fig. 17 shows photoluminescence data by the Accent PL method, as discussed above, while in Fig.18, junction leakage measured by the Frontier Semiconductor non-contact junction photo- voltage (JPV) method is shown.
  • JPV Frontier Semiconductor non-contact junction photo- voltage
  • Only the B 18 H x + implants without Ge PAI show low damage and leakage for all anneal sequences. In particular, junction leakage after laser anneal is 2 decades lower using Bj 8 H x + than B + or BF 2 + .
  • the use of a Ge PAI results in significantly higher leakage for all implant species.

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Physical Vapour Deposition (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

L'invention concerne un procédé de fabrication de semi-conducteur dans lequel le dopage est réalisé par l'implantation de faisceaux ioniques formés à partir de molécules ionisées. L'invention concerne plus particulièrement un procédé dans lequel des ions dopants sous forme moléculaire ou d'agrégat sont implantés dans un substrat avec et sans co-implantation d'agrégat ionique non dopant, tel qu'un agrégat ionique de carbone, l'ion dopant étant implanté dans la couche amorphe créée par la co-implantation afin de réduire les défauts de la structure cristalline, pour ainsi réduire le courant de fuite et améliorer la performance des jonctions du semi-conducteur. Des composés ioniques dopants de formules AnHx+ et AnR2Hx+ sont utilisés afin de minimiser les défauts cristallins résultant de l'implantation ionique. Ces composés comprennent des co-implants d'agrégats de carbone avec des implants de dopants monomères ou en agrégat ou simplement des agrégats de dopants pour implantation. En particulier, l'invention concerne un procédé consistant à implanter tout d'abord des agrégats de carbone dans des tranches de semi-conducteur puis des implants de bore, de phosphore ou d'arsenic, ou des implants d'agrégats de dopants à base de bore, de phosphore ou d'arsenic. La forme chimique des agrégats ioniques moléculaires est AnHx+ ou AnR2Hx+, A désignant le dopant ou les atomes de carbone, n et x étant des nombres entiers avec n supérieur ou égal à 4 et x supérieur ou égal à 0, et R étant une molécule contenant des atomes compatibles avec le procédé d'implantation quand ils sont implantés (par exemple, Si, Ge, F, H ou C). Ces ions sont produits à partir de composés chimiques de formule AbL2Hn, dans laquelle la formule chimique de L2 contient R, b peut être un nombre entier différent de n, m peut être un nombre entier différent de x et z est un nombre entier supérieur ou égal à zéro.
PCT/US2008/060029 2007-04-11 2008-04-11 Implantation d'agrégats ioniques pour l'ingénierie des défauts WO2008128039A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US92282607P 2007-04-11 2007-04-11
US60/922,826 2007-04-11

Publications (2)

Publication Number Publication Date
WO2008128039A2 true WO2008128039A2 (fr) 2008-10-23
WO2008128039A3 WO2008128039A3 (fr) 2009-12-30

Family

ID=39864626

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2008/060029 WO2008128039A2 (fr) 2007-04-11 2008-04-11 Implantation d'agrégats ioniques pour l'ingénierie des défauts

Country Status (2)

Country Link
TW (1) TWI474382B (fr)
WO (1) WO2008128039A2 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7919402B2 (en) 2006-12-06 2011-04-05 Semequip, Inc. Cluster ion implantation for defect engineering
WO2012073583A1 (fr) * 2010-12-03 2012-06-07 Kabushiki Kaisha Toshiba Procédé pour former une couche d'implantation d'impuretés
LT5895B (lt) 2011-05-18 2013-01-25 Lietuvos Energetikos Institutas Vandenilio gavybos iš vandens būdas
US11315791B2 (en) 2018-12-15 2022-04-26 Entegris, Inc. Fluorine ion implantation method and system

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10488000B2 (en) 2017-06-22 2019-11-26 DMF, Inc. Thin profile surface mount lighting apparatus

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5107538A (en) * 1991-06-06 1992-04-21 At&T Bell Laboratories Optical waveguide system comprising a rare-earth Si-based optical device
US7154153B1 (en) * 1997-07-29 2006-12-26 Micron Technology, Inc. Memory device
WO2002005349A1 (fr) * 2000-07-12 2002-01-17 California Institute Of Technology Passivation electrique de surfaces contenant du silicium au moyen de couches organiques
US20040002202A1 (en) * 2002-06-26 2004-01-01 Horsky Thomas Neil Method of manufacturing CMOS devices by the implantation of N- and P-type cluster ions
CN102034665B (zh) * 2002-06-26 2014-06-25 山米奎普公司 一种离子植入装置和一种通过植入氢化硼簇离子制造半导体的方法
US6936505B2 (en) * 2003-05-20 2005-08-30 Intel Corporation Method of forming a shallow junction
KR101455564B1 (ko) * 2005-12-09 2014-10-27 세미이큅, 인코포레이티드 탄소 클러스터의 주입에 의한 반도체 디바이스의 제조를 위한 시스템 및 방법
JP2009540533A (ja) * 2006-06-12 2009-11-19 セムイクウィップ・インコーポレーテッド 蒸発装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7919402B2 (en) 2006-12-06 2011-04-05 Semequip, Inc. Cluster ion implantation for defect engineering
WO2012073583A1 (fr) * 2010-12-03 2012-06-07 Kabushiki Kaisha Toshiba Procédé pour former une couche d'implantation d'impuretés
LT5895B (lt) 2011-05-18 2013-01-25 Lietuvos Energetikos Institutas Vandenilio gavybos iš vandens būdas
US11315791B2 (en) 2018-12-15 2022-04-26 Entegris, Inc. Fluorine ion implantation method and system
US11538687B2 (en) 2018-12-15 2022-12-27 Entegris, Inc. Fluorine ion implantation system with non-tungsten materials and methods of using

Also Published As

Publication number Publication date
TW200849346A (en) 2008-12-16
WO2008128039A3 (fr) 2009-12-30
TWI474382B (zh) 2015-02-21

Similar Documents

Publication Publication Date Title
US7919402B2 (en) Cluster ion implantation for defect engineering
JP5911528B2 (ja) 炭素クラスターの注入により半導体デバイスを製造するためのシステムおよび方法
US8067302B2 (en) Defect-free junction formation using laser melt annealing of octadecaborane self-amorphizing implants
US8586459B2 (en) Ion implantation with molecular ions containing phosphorus and arsenic
US8101487B2 (en) Method for fabricating semiconductor devices with shallow diffusion regions
US20020187614A1 (en) Methods for forming ultrashallow junctions with low sheet resistance
WO2008128039A2 (fr) Implantation d'agrégats ioniques pour l'ingénierie des défauts
US7105427B1 (en) Method for shallow dopant distribution
US20080242066A1 (en) Method Of Manufacturing Semiconductor
US20100112788A1 (en) Method to reduce surface damage and defects
Renau Recent developments in ion implantation
US6835626B2 (en) Method to overcome instability of ultra-shallow semiconductor junctions
Skarlatos et al. Issues with n-type Dopants in Germanium
US20120171853A1 (en) Defect-free junction formation using octadecaborane self-amorphizing implants
Chang et al. High Mass Molecular Ion Implantation
Current et al. Shallow and high-dose implants for IC and PV devices
Kim et al. Ultra-shallow junction formation on 3D silicon and germanium device structures by ion energy decoupled plasma doping
JPH06151348A (ja) 半導体装置の製造方法
Horsky et al. Elimination of Defects in USJ Formation by Beam Line Cluster Implantation Doping
Sekar et al. SELF-AMORPHIZATION WITH CLUSTER IMPLANTATION

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08745607

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08745607

Country of ref document: EP

Kind code of ref document: A2