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WO2008128039A3 - Implantation d'agrégats ioniques pour l'ingénierie des défauts - Google Patents

Implantation d'agrégats ioniques pour l'ingénierie des défauts Download PDF

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Publication number
WO2008128039A3
WO2008128039A3 PCT/US2008/060029 US2008060029W WO2008128039A3 WO 2008128039 A3 WO2008128039 A3 WO 2008128039A3 US 2008060029 W US2008060029 W US 2008060029W WO 2008128039 A3 WO2008128039 A3 WO 2008128039A3
Authority
WO
WIPO (PCT)
Prior art keywords
ion
dopant
cluster
cluster ion
ion implantation
Prior art date
Application number
PCT/US2008/060029
Other languages
English (en)
Other versions
WO2008128039A2 (fr
Inventor
Wade A. Krull
Dale C. Jacobson
Karuppanan Sekar
Thomas N. Horsky
Original Assignee
Semequip, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semequip, Inc. filed Critical Semequip, Inc.
Publication of WO2008128039A2 publication Critical patent/WO2008128039A2/fr
Publication of WO2008128039A3 publication Critical patent/WO2008128039A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26566—Bombardment with radiation with high-energy radiation producing ion implantation of a cluster, e.g. using a gas cluster ion beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2658—Bombardment with radiation with high-energy radiation producing ion implantation of a molecular ion, e.g. decaborane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Physical Vapour Deposition (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

L'invention concerne un procédé de fabrication de semi-conducteur dans lequel le dopage est réalisé par l'implantation de faisceaux ioniques formés à partir de molécules ionisées. L'invention concerne plus particulièrement un procédé dans lequel des ions dopants sous forme moléculaire ou d'agrégat sont implantés dans un substrat avec et sans co-implantation d'agrégat ionique non dopant, tel qu'un agrégat ionique de carbone, l'ion dopant étant implanté dans la couche amorphe créée par la co-implantation afin de réduire les défauts de la structure cristalline, pour ainsi réduire le courant de fuite et améliorer la performance des jonctions du semi-conducteur. Des composés ioniques dopants de formules AnHx+ et AnR2Hx+ sont utilisés afin de minimiser les défauts cristallins résultant de l'implantation ionique. Ces composés comprennent des co-implants d'agrégats de carbone avec des implants de dopants monomères ou en agrégat ou simplement des agrégats de dopants pour implantation. En particulier, l'invention concerne un procédé consistant à implanter tout d'abord des agrégats de carbone dans des tranches de semi-conducteur puis des implants de bore, de phosphore ou d'arsenic, ou des implants d'agrégats de dopants à base de bore, de phosphore ou d'arsenic. La forme chimique des agrégats ioniques moléculaires est AnHx+ ou AnR2Hx+, A désignant le dopant ou les atomes de carbone, n et x étant des nombres entiers avec n supérieur ou égal à 4 et x supérieur ou égal à 0, et R étant une molécule contenant des atomes compatibles avec le procédé d'implantation quand ils sont implantés (par exemple, Si, Ge, F, H ou C). Ces ions sont produits à partir de composés chimiques de formule AbL2Hn, dans laquelle la formule chimique de L2 contient R, b peut être un nombre entier différent de n, m peut être un nombre entier différent de x et z est un nombre entier supérieur ou égal à zéro.
PCT/US2008/060029 2007-04-11 2008-04-11 Implantation d'agrégats ioniques pour l'ingénierie des défauts WO2008128039A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US92282607P 2007-04-11 2007-04-11
US60/922,826 2007-04-11

Publications (2)

Publication Number Publication Date
WO2008128039A2 WO2008128039A2 (fr) 2008-10-23
WO2008128039A3 true WO2008128039A3 (fr) 2009-12-30

Family

ID=39864626

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2008/060029 WO2008128039A2 (fr) 2007-04-11 2008-04-11 Implantation d'agrégats ioniques pour l'ingénierie des défauts

Country Status (2)

Country Link
TW (1) TWI474382B (fr)
WO (1) WO2008128039A2 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7919402B2 (en) 2006-12-06 2011-04-05 Semequip, Inc. Cluster ion implantation for defect engineering

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012073583A1 (fr) * 2010-12-03 2012-06-07 Kabushiki Kaisha Toshiba Procédé pour former une couche d'implantation d'impuretés
LT5895B (lt) 2011-05-18 2013-01-25 Lietuvos Energetikos Institutas Vandenilio gavybos iš vandens būdas
US10488000B2 (en) 2017-06-22 2019-11-26 DMF, Inc. Thin profile surface mount lighting apparatus
WO2020123907A1 (fr) 2018-12-15 2020-06-18 Entegris, Inc. Procédé et système d'implantation ionique fluor

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5107538A (en) * 1991-06-06 1992-04-21 At&T Bell Laboratories Optical waveguide system comprising a rare-earth Si-based optical device
US20020139975A1 (en) * 2000-07-12 2002-10-03 Lewis Nathan S. Electrical passivation of silicon-containing surfaces using organic layers
US20060097193A1 (en) * 2002-06-26 2006-05-11 Horsky Thomas N Ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ions
US20070148888A1 (en) * 2005-12-09 2007-06-28 Krull Wade A System and method for the manufacture of semiconductor devices by the implantation of carbon clusters
WO2007146942A2 (fr) * 2006-06-12 2007-12-21 Semequip, Inc. Système d'acheminement de vapeur utile avec des sources d'ions et des vaporisateurs pour une utilisation dans un tel système

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7154153B1 (en) * 1997-07-29 2006-12-26 Micron Technology, Inc. Memory device
US20040002202A1 (en) * 2002-06-26 2004-01-01 Horsky Thomas Neil Method of manufacturing CMOS devices by the implantation of N- and P-type cluster ions
US6936505B2 (en) * 2003-05-20 2005-08-30 Intel Corporation Method of forming a shallow junction

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5107538A (en) * 1991-06-06 1992-04-21 At&T Bell Laboratories Optical waveguide system comprising a rare-earth Si-based optical device
US20020139975A1 (en) * 2000-07-12 2002-10-03 Lewis Nathan S. Electrical passivation of silicon-containing surfaces using organic layers
US20060097193A1 (en) * 2002-06-26 2006-05-11 Horsky Thomas N Ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ions
US20070194252A1 (en) * 2002-06-26 2007-08-23 Semequip, Inc. Ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ions
US20070148888A1 (en) * 2005-12-09 2007-06-28 Krull Wade A System and method for the manufacture of semiconductor devices by the implantation of carbon clusters
WO2007146942A2 (fr) * 2006-06-12 2007-12-21 Semequip, Inc. Système d'acheminement de vapeur utile avec des sources d'ions et des vaporisateurs pour une utilisation dans un tel système

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7919402B2 (en) 2006-12-06 2011-04-05 Semequip, Inc. Cluster ion implantation for defect engineering

Also Published As

Publication number Publication date
TW200849346A (en) 2008-12-16
WO2008128039A2 (fr) 2008-10-23
TWI474382B (zh) 2015-02-21

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