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WO2009037991A1 - クリーニング方法及び基板処理装置 - Google Patents

クリーニング方法及び基板処理装置 Download PDF

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Publication number
WO2009037991A1
WO2009037991A1 PCT/JP2008/066218 JP2008066218W WO2009037991A1 WO 2009037991 A1 WO2009037991 A1 WO 2009037991A1 JP 2008066218 W JP2008066218 W JP 2008066218W WO 2009037991 A1 WO2009037991 A1 WO 2009037991A1
Authority
WO
WIPO (PCT)
Prior art keywords
containing gas
supplying
processing chamber
processing apparatus
cleaning method
Prior art date
Application number
PCT/JP2008/066218
Other languages
English (en)
French (fr)
Inventor
Hironobu Miya
Yuji Takebayashi
Masanori Sakai
Shinya Sasaki
Hirohisa Yamazaki
Atsuhiko Suda
Takashi Tanioka
Original Assignee
Hitachi Kokusai Electric Inc.
Kanto Denka Kogyo Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Kokusai Electric Inc., Kanto Denka Kogyo Co., Ltd. filed Critical Hitachi Kokusai Electric Inc.
Priority to US12/671,189 priority Critical patent/US20100186774A1/en
Priority to JP2009533109A priority patent/JP5213868B2/ja
Publication of WO2009037991A1 publication Critical patent/WO2009037991A1/ja

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a batch of workpieces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67769—Storage means

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Optics & Photonics (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

　成膜する為の原料ガスを供給して基板上に所望の膜を形成する基板処理装置の処理室内に付着した膜を除去するクリーニング方法であって、前記処理室内にハロゲン含有ガスを供給する工程と、前記ハロゲン含有ガスの供給を開始後、前記処理室内に前記ハロゲン含有ガスを供給しつつフッ素含有ガスを供給する工程と、を有し、前記フッ素含有ガスを供給する工程では、前記処理室内に供給されるガス全体に対する前記ハロゲン含有ガスの供給流量比を２０～２５％の範囲内とするクリーニング方法が開示されている。
PCT/JP2008/066218 2007-09-19 2008-09-09 クリーニング方法及び基板処理装置 WO2009037991A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/671,189 US20100186774A1 (en) 2007-09-19 2008-09-09 Cleaning method and substrate processing apparatus
JP2009533109A JP5213868B2 (ja) 2007-09-19 2008-09-09 クリーニング方法及び基板処理装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-242653 2007-09-19
JP2007242653 2007-09-19

Publications (1)

Publication Number Publication Date
WO2009037991A1 true WO2009037991A1 (ja) 2009-03-26

Family

ID=40467811

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/066218 WO2009037991A1 (ja) 2007-09-19 2008-09-09 クリーニング方法及び基板処理装置

Country Status (4)

Country Link
US (1) US20100186774A1 (ja)
JP (1) JP5213868B2 (ja)
KR (1) KR20100071961A (ja)
WO (1) WO2009037991A1 (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110079251A1 (en) * 2009-04-28 2011-04-07 Olga Kryliouk Method for in-situ cleaning of deposition systems
JP2016516287A (ja) * 2012-12-18 2016-06-02 シースター ケミカルズ インク． 薄膜堆積反応器及び薄膜層をインサイチューで乾式浄化するプロセス及び方法
KR20210033428A (ko) 2019-09-18 2021-03-26 가부시키가이샤 코쿠사이 엘렉트릭 기화 장치, 기판 처리 장치, 클리닝 방법, 반도체 장치의 제조 방법, 및 프로그램
CN112838003A (zh) * 2019-11-22 2021-05-25 株式会社国际电气 半导体器件的制造方法、衬底处理装置及记录介质
KR20210117950A (ko) 2020-03-19 2021-09-29 가부시키가이샤 코쿠사이 엘렉트릭 기화 장치, 기판 처리 장치, 클리닝 방법 및 반도체 장치의 제조 방법
JP2022136221A (ja) * 2019-11-22 2022-09-15 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070292974A1 (en) * 2005-02-17 2007-12-20 Hitachi Kokusai Electric Inc Substrate Processing Method and Substrate Processing Apparatus
JP5616591B2 (ja) 2008-06-20 2014-10-29 株式会社日立国際電気 半導体装置の製造方法及び基板処理装置
JP5805461B2 (ja) * 2010-10-29 2015-11-04 株式会社日立国際電気 基板処理装置および半導体装置の製造方法
JP6630649B2 (ja) * 2016-09-16 2020-01-15 株式会社日立ハイテクノロジーズ プラズマ処理方法
JP6602332B2 (ja) * 2017-03-28 2019-11-06 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003059915A (ja) * 2001-06-08 2003-02-28 Tokyo Electron Ltd 薄膜形成装置の洗浄方法
JP2003203907A (ja) * 2002-01-07 2003-07-18 Hitachi Ltd Ｃｖｄ装置およびそのクリーニング方法
JP2004015034A (ja) * 2002-06-12 2004-01-15 Handotai Process Kenkyusho:Kk 成膜方法、成膜装置及び成膜装置のクリーニング方法
JP2005340281A (ja) * 2004-05-24 2005-12-08 Hitachi Kokusai Electric Inc 基板処理装置
JP2006179834A (ja) * 2004-12-24 2006-07-06 Kyoto Univ 半導体処理装置のクリーニング方法およびシリコン基板のエッチング方法
JP2006324663A (ja) * 2005-05-16 2006-11-30 Air Products & Chemicals Inc 汚染されたツール部品の清浄化方法
JP2007150213A (ja) * 2004-12-28 2007-06-14 Tokyo Electron Ltd 薄膜形成装置の洗浄方法、薄膜形成装置及びプログラム

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JP4348835B2 (ja) * 2000-05-26 2009-10-21 東京エレクトロン株式会社 クリーニング方法
JP4669605B2 (ja) * 2000-11-20 2011-04-13 東京エレクトロン株式会社 半導体製造装置のクリーニング方法
US7357138B2 (en) * 2002-07-18 2008-04-15 Air Products And Chemicals, Inc. Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials
JP4430918B2 (ja) * 2003-03-25 2010-03-10 東京エレクトロン株式会社 薄膜形成装置の洗浄方法及び薄膜形成方法
JP2005239056A (ja) * 2004-02-27 2005-09-08 Tsubakimoto Chain Co 自動車ボディ横向き搬送装置
JP2006173301A (ja) * 2004-12-15 2006-06-29 L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude 非シリコン系膜の成膜装置のクリーニング方法
TWI365919B (en) * 2004-12-28 2012-06-11 Tokyo Electron Ltd Film formation apparatus and method of using the same
JP2007081169A (ja) * 2005-09-14 2007-03-29 Hitachi Kokusai Electric Inc 半導体装置の製造方法
US8679989B2 (en) * 2006-03-27 2014-03-25 Hitachi Kokusai Electric Inc. Method of manufacturing semiconductor device including removal of deposits from process chamber and supply portion
JP2009076590A (ja) * 2007-09-19 2009-04-09 Hitachi Kokusai Electric Inc クリーニング方法

Patent Citations (7)

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Publication number Priority date Publication date Assignee Title
JP2003059915A (ja) * 2001-06-08 2003-02-28 Tokyo Electron Ltd 薄膜形成装置の洗浄方法
JP2003203907A (ja) * 2002-01-07 2003-07-18 Hitachi Ltd Ｃｖｄ装置およびそのクリーニング方法
JP2004015034A (ja) * 2002-06-12 2004-01-15 Handotai Process Kenkyusho:Kk 成膜方法、成膜装置及び成膜装置のクリーニング方法
JP2005340281A (ja) * 2004-05-24 2005-12-08 Hitachi Kokusai Electric Inc 基板処理装置
JP2006179834A (ja) * 2004-12-24 2006-07-06 Kyoto Univ 半導体処理装置のクリーニング方法およびシリコン基板のエッチング方法
JP2007150213A (ja) * 2004-12-28 2007-06-14 Tokyo Electron Ltd 薄膜形成装置の洗浄方法、薄膜形成装置及びプログラム
JP2006324663A (ja) * 2005-05-16 2006-11-30 Air Products & Chemicals Inc 汚染されたツール部品の清浄化方法

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110079251A1 (en) * 2009-04-28 2011-04-07 Olga Kryliouk Method for in-situ cleaning of deposition systems
JP2016516287A (ja) * 2012-12-18 2016-06-02 シースター ケミカルズ インク． 薄膜堆積反応器及び薄膜層をインサイチューで乾式浄化するプロセス及び方法
US10240230B2 (en) 2012-12-18 2019-03-26 Seastar Chemicals Inc. Process and method for in-situ dry cleaning of thin film deposition reactors and thin film layers
KR20210033428A (ko) 2019-09-18 2021-03-26 가부시키가이샤 코쿠사이 엘렉트릭 기화 장치, 기판 처리 장치, 클리닝 방법, 반도체 장치의 제조 방법, 및 프로그램
US11866822B2 (en) 2019-09-18 2024-01-09 Kokusai Electric Corporation Vaporizer, substrate processing apparatus, and method of manufacturing semiconductor device
JP2022136221A (ja) * 2019-11-22 2022-09-15 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム
US11315800B2 (en) 2019-11-22 2022-04-26 Kokusai Electric Corporation Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
JP7114554B2 (ja) 2019-11-22 2022-08-08 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム
JP2021082774A (ja) * 2019-11-22 2021-05-27 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置、およびプログラム
JP7326555B2 (ja) 2019-11-22 2023-08-15 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム
CN112838003A (zh) * 2019-11-22 2021-05-25 株式会社国际电气 半导体器件的制造方法、衬底处理装置及记录介质
US11894239B2 (en) 2019-11-22 2024-02-06 Kokusai Electric Corporation Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
CN112838003B (zh) * 2019-11-22 2024-08-16 株式会社国际电气 半导体器件的制造方法、衬底处理装置及记录介质
US12400874B2 (en) 2019-11-22 2025-08-26 Kokusai Electric Corporation Processing method, method of manufacturing semiconductor device, processing apparatus, and recording medium
KR20210117950A (ko) 2020-03-19 2021-09-29 가부시키가이샤 코쿠사이 엘렉트릭 기화 장치, 기판 처리 장치, 클리닝 방법 및 반도체 장치의 제조 방법

Also Published As

Publication number Publication date
KR20100071961A (ko) 2010-06-29
US20100186774A1 (en) 2010-07-29
JP5213868B2 (ja) 2013-06-19
JPWO2009037991A1 (ja) 2011-01-06

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